Process chamber and semiconductor process equipment

Abstract

The invention discloses a process chamber and semiconductor process equipment. The disclosed process chamber comprises a chamber body and a bearing device, the chamber body is provided with an inner cavity, an exhaust hole, an air inlet hole and a first air supplementing hole, and the exhaust hole, the air inlet hole and the first air supplementing hole communicate with the inner cavity; the bearing device is arranged in the inner cavity and used for supporting the wafer in the supporting direction, the exhaust holes and the air inlet holes are distributed in the two opposite sides of the cavity body respectively, the first air supplementing holes are distributed between the exhaust holes and the air inlet holes, and the exhaust holes, the air inlet holes and the first air supplementing holes are all formed in the peripheral side of the bearing device in the supporting direction. According to the scheme, the problem that the yield of wafers is easily affected due to the fact that process gas is difficult to uniformly distribute in a process chamber related to the related technology can be relieved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor process equipment design, and specifically relates to a process chamber and semiconductor process equipment. Background Art

[0002] Wafers are usually processed in a process chamber of a semiconductor process equipment. The process chamber is usually provided with an air inlet and an exhaust hole, so that during the process, process gas can be introduced into the process chamber through the air inlet, and the process gas can flow out of the process chamber through the exhaust hole. However, after the process gas enters the process chamber through the air inlet, it is difficult to be evenly distributed in the process chamber, which makes it difficult for the process gas to contact the wafer evenly, which can easily affect the process effect of the wafer, and then easily affect the yield of the wafer. Summary of the invention

[0003] The invention discloses a process chamber and semiconductor process equipment to alleviate the problem that process gas is difficult to be evenly distributed inside the process chamber involved in the related art, which easily affects the yield of wafers.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions: In a first aspect, the present application discloses a process chamber, wherein the disclosed process chamber comprises a chamber body and a carrying device; The chamber body has an inner cavity, an exhaust hole, an air inlet hole and a first air supplement hole, and the exhaust hole, the air inlet hole and the first air supplement hole are respectively connected to the inner cavity; The supporting device is arranged in the inner cavity, and is used to support the wafer along the supporting direction. The exhaust hole and the air inlet hole are respectively distributed on two opposite sides of the chamber body, and the first air supply hole is distributed between the exhaust hole and the air inlet hole. The exhaust hole, the air inlet hole and the first air supply hole are all arranged on the circumference of the supporting device around the supporting direction.

[0005] In a second aspect, the present application discloses a semiconductor process equipment, which includes a radio frequency component and the process chamber described above, wherein the chamber body has a connecting hole, the connecting hole is connected to the inner cavity, the radio frequency component is arranged in the chamber body, and is used to transmit radio frequency energy to the inner cavity through the connecting hole.

[0006] The technical solution adopted by the present invention can achieve the following technical effects: The process chamber disclosed in the embodiment of the present application improves the structure of the process chamber involved in the related art, and sets the chamber body including the exhaust hole, the air inlet hole and the first air supplement hole connected to the inner cavity, and sets the exhaust hole and the air inlet hole respectively distributed on the opposite sides of the chamber body, and makes the first air supplement hole distributed between the exhaust hole and the air inlet hole, so that the process of introducing the process gas into the inner cavity can be supplemented through the first air supplement hole. In this structure, since the air supplement is located between the exhaust hole and the air inlet hole, the process gas enters the inner cavity through the air inlet hole and the first air supplement hole, which is conducive to balancing the pressure fluctuation in the inner cavity, so as to alleviate the situation that the process gas is easily caused by the introduction of the process gas into the inner cavity only through the air inlet hole. The more obvious pressure fluctuation in the inner cavity makes it difficult for the process gas to be more evenly distributed in the inner cavity, so that the process gas can be more evenly distributed in the inner cavity after entering the inner cavity through the air inlet hole and the first air supplement hole, so that the process gas can be more evenly contacted with the wafer, so as to avoid affecting the process effect of the wafer as much as possible, and thus it is conducive to improving the yield of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a schematic diagram of the structure of the process chamber disclosed in the embodiment of the present application; Figure 2 is a partial structural schematic diagram of the process chamber disclosed in the embodiment of the present application from another perspective; Figure 3 yes Figure 1 sectional view of Figure 4 yes Figure 1 A cross-section view from another perspective; Figure 5 yes Figure 1 A cross-section view from another perspective; Figure 6 yes Figure 1 A cross-sectional view at another viewing angle; Figure 7 It is a schematic diagram of the structure of the flow equalizer assembly disclosed in the embodiment of the present application.

[0008] Description of reference numerals: 100-chamber body, 110-inner cavity, 120-exhaust hole, 130-intake hole, 140-first air supplement hole, 150-second air supplement hole, 160-box, 161-first opening, 162-second opening, 163-first side wall, 164-second side wall, 165-third side wall, 166-fourth side wall, 170-first cover, 180-second cover, 200-carrying device, 210-supporting part, 300-flow plate assembly, 310-first flow plate, 311-first flow hole, 320-second flow plate, 321-second flow hole, 400-RF components. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0010] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of the same type, and the number of objects is not limited. For example, the first object can be one or more.

[0011] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0012] Please refer to Figures 1 to 7 An embodiment of the present application discloses a process chamber, and the disclosed process chamber includes a chamber body 100 and a carrying device 200 .

[0013] The chamber body 100 is a core component of the process chamber, and is used to provide a process space for the wafer. The chamber body 100 has an inner cavity 110, an exhaust hole 120, an air inlet hole 130, and a first air supplement hole 140. The exhaust hole 120, the air inlet hole 130, and the first air supplement hole 140 are respectively connected to the inner cavity 110, so that the process gas can enter the inner cavity 110 through the air inlet hole 130 and the first air supplement hole 140, respectively, and the process gas in the inner cavity 110 can be discharged to the outside of the inner cavity 110 through the exhaust hole 120.

[0014] The exhaust hole 120 and the air inlet hole 130 are respectively distributed on opposite sides of the chamber body 100, so that the process gas can be introduced into the inner cavity 110 and discharged from the inner cavity 110 from the opposite sides of the chamber body 100, and the first gas supply hole 140 is distributed between the exhaust hole 120 and the air inlet hole 130, so that the process gas can enter the inner cavity 110 from between the exhaust hole 120 and the air inlet hole 130 through the first gas supply hole 140.

[0015] The carrier 200 is used to carry the wafer in the process chamber, wherein the carrier 200 is disposed in the inner cavity 110 and is used to support the wafer along the supporting direction to achieve the carrying of the wafer. The exhaust hole 120, the air inlet hole 130 and the first air supplement hole 140 are all disposed around the supporting direction on the circumference of the carrier 200, so that the process gas entering the inner cavity 110 through the air inlet hole 130 and the first air supplement hole 140 can gradually cover the entire wafer starting from the edge of the wafer.

[0016] The process chamber disclosed in the embodiment of the present application improves the structure of the process chamber involved in the related art. The chamber body 100 includes an exhaust hole 120, an air inlet hole 130 and a first air supply hole 140 connected to the inner cavity 110. The exhaust hole 120 and the air inlet hole 130 are respectively distributed on two opposite sides of the chamber body 100, and the first air supply hole 140 is distributed between the exhaust hole 120 and the air inlet hole 130. In this way, air can be supplied through the first air supply hole 140 during the process of introducing process gas into the inner cavity 110. In this structure, since the first gas supplementary hole 140 is located between the exhaust hole 120 and the air inlet hole 130, the process gas enters the inner cavity 110 through the air inlet hole 130 and the first gas supplementary hole 140, which is beneficial to balancing the pressure fluctuation in the inner cavity 110, thereby alleviating the situation where only introducing the process gas into the inner cavity 110 through the air inlet hole 130 easily causes more obvious pressure fluctuation in the inner cavity 110, making it difficult for the process gas to be distributed more evenly in the inner cavity 110. This allows the process gas to be more evenly distributed in the inner cavity 110 after entering the inner cavity 110 through the air inlet hole 130 and the first gas supplementary hole 140, so that the process gas can contact the wafer more evenly to avoid affecting the process effect of the wafer as much as possible, thereby helping to improve the yield of the wafer.

[0017] In addition, the exhaust hole 120, the air inlet hole 130 and the first air supplement hole 140 are all arranged on the circumferential side of the supporting device 200 around the supporting direction, so that the process gas entering the inner cavity 110 through the air inlet hole 130 and the first air supplement hole 140 can gradually cover the entire wafer starting from the edge of the wafer, so that the process gas can better cover the edge of the wafer, reduce the unevenness caused by the edge effect, and reduce the concentration of the process gas in the central area, avoiding local uneven concentration of the process gas, and ensuring as much as possible that the process gas covers the entire wafer surface evenly, which is beneficial to further improve the yield of the wafer.

[0018] In a further technical solution, the chamber body 100 may also have a second gas supplement hole 150, which may be distributed between the exhaust hole 120 and the inlet hole 130, and the second gas supplement hole 150 and the first gas supplement hole 140 may be respectively distributed on the other two opposite sides of the chamber body 100. In this structure, the process gas can enter the inner cavity 110 from the other two opposite sides of the chamber body 100 for gas supplement, so that the process gas entering the inner cavity 110 through the second gas supplement hole 150 and the first gas supplement hole 140 can better cover the edge and center area of ​​the inner cavity 110, which is conducive to alleviating the local accumulation of the process gas in the inner cavity 110, and thus the process gas can be more evenly distributed in the entire inner cavity 110.

[0019] Of course, the air inlet hole 130, the first air supplement hole 140 and the second air supplement hole 150 can be multiple, so as to further alleviate the problem of local accumulation of process gas in the inner cavity 110, and try to avoid the phenomenon of uneven concentration of process gas in the central area of ​​the inner cavity 110 and the edge area of ​​the inner cavity 110, so as to make the distribution of process gas more uniform in the entire inner cavity 110. At the same time, this structure can more efficiently introduce process gas into the inner cavity 110, which is conducive to improving work efficiency.

[0020] In a feasible technical solution, the process chamber may further include a plurality of flow plate assemblies 300, and the plurality of flow plate assemblies 300 may all be located in the inner cavity 110, and may respectively cover the exhaust hole 120, the air inlet hole 130, the first air supply hole 140 and the second air supply hole 150, so that the process gas entering the inner cavity 110 from the air inlet hole 130, the first air supply hole 140 and the second air supply hole 150 can respectively pass through the corresponding flow plate assemblies 300 and diffuse in the inner cavity 110, and the process gas in the inner cavity 110 can pass through the corresponding flow plate assemblies 300 and be discharged from the inner cavity 110 from the exhaust hole 120.

[0021] In this structure, the flow plate assembly 300 can divide the process gas into multiple small flow streams, so that the process gas is evenly distributed in the entire inner cavity 110, alleviating the phenomenon of excessively high or low local pressure in the inner cavity 110, and the flow plate assembly 300 makes the flow of the process gas smoother, thereby reducing the generation of turbulence and eddies, which is beneficial to improving the stability and uniformity of the process gas.

[0022] Preferably, the flow plate assembly 300 may include a first flow plate 310 and a second flow plate 320, and the first flow plate 310 and the second flow plate 320 may be arranged oppositely and spaced apart to facilitate the flow of process gas between the first flow plate 310 and the second flow plate 320. The first flow plate 310 may have a plurality of first flow holes 311, and the second flow plate 320 may have a plurality of second flow holes 321, and the plurality of first flow holes 311 may be staggered with the plurality of second flow holes 321, respectively.

[0023] In a specific working process, when the process gas is introduced into the inner cavity 110, the process gas entering the inner cavity 110 through the gas inlet hole 130, the first gas supplement hole 140 and the second gas supplement hole 150 can pass through the corresponding first flow plate 310 and the corresponding second flow plate 320, respectively, and diffuse into the inner cavity 110. When the process gas is discharged from the inner cavity 110, the process gas in the inner cavity 110 can pass through the corresponding first flow plate 310 and the corresponding second flow plate 320, and be discharged from the inner cavity 110 through the exhaust hole 120.

[0024] In this structure, the process gas is dispersed into a plurality of small streams when passing through the first flow-distributing plate 310, and these streams are dispersed again when passing through the second flow-distributing plate 320. Since the plurality of first flow-distributing holes 311 of the first flow-distributing plate 310 are staggered with the plurality of second flow-distributing holes 321 of the second flow-distributing plate 320, the process gas dispersed by the first flow-distributing plate 310 needs to change direction before passing through the second flow-distributing plate 320, and then the process gas will be further dispersed when passing through the second flow-distributing plate 320, thereby forming a more uniform flow field, making the distribution of the process gas in the entire inner cavity 110 more uniform. At the same time, the speed of the process gas is reduced when passing through the first flow-distributing plate 310, and the plurality of first flow-distributing holes 311 are staggered with the plurality of second flow-distributing holes 321, making the diffusion path of the process gas more complicated, so that the speed of the process gas passing through the second flow-distributing plate 320 is further reduced, and the speed difference of the process gas in the inner cavity 110 is reduced as much as possible, thereby reducing the formation of turbulence and eddy currents, which is conducive to improving the stability and uniformity of the process gas.

[0025] In the embodiment of the present application, the chamber body 100 may include a box body 160 and a first cover body 170, and the exhaust hole 120, the air inlet hole 130, the first air supplement hole 140 and the second air supplement hole 150 may all be provided in the box body 160. The box body 160 may have a first opening 161, and the first cover body 170 may be detachably sealed and blocked in the first opening 161, and the first cover body 170 and the box body 160 may enclose the inner cavity 110, and the opening direction of the first opening 161 may be parallel to the supporting direction.

[0026] In a specific working process, when installing or removing the carrying device 200, the first cover 170 can be separated from the box 160, and the carrying device 200 can be inserted into the box 160 through the first opening 161. After the carrying device 200 is installed in the box 160, the first cover 170 and the box 160 can be detachably sealed and connected, so that the first cover 170 can be sealed and blocked in the first opening 161, so that the carrying device 200 can be installed in the inner cavity 110 surrounded by the first cover 170 and the box 160. This structure facilitates the disassembly and assembly of the carrying device 200 by setting the first cover 170 to be detachably sealed and blocked in the first opening 161, which is conducive to reducing the difficulty of assembling the carrying device 200, and further facilitates the maintenance of the carrying device 200.

[0027] In addition, in this structure, the carrying device 200 can be connected to the bottom wall of the box body 160, and the bottom wall of the box body 160 can be opposite to the first opening 161. At the same time, since the opening direction of the first opening 161 is parallel to the supporting direction, the carrying device 200 can be more easily installed in the box body 160.

[0028] Optionally, the first cover 170 and the box body 160 can be detachably connected by threaded connection or snap connection, and a first sealing ring or a first sealant can be provided between the first cover 170 and the box body 160 so that the first cover 170 can be detachably sealed to the first opening 161 .

[0029] In a more preferred technical solution, the chamber body 100 may further include a second cover 180, which is actually a chamber cover. The box body 160 may further have a second opening 162, and the second cover 180 may be detachably sealed and blocked at the second opening 162, thereby providing a sealed process space and avoiding the leakage of process gas during the process as much as possible. Specifically, the second cover 180 may be connected to the box body 160 by a threaded connection or a snap-on connection, and a second sealing ring or a second sealant may be provided between the second cover 180 and the box body 160, so that the second cover 180 can detachably seal and block the second opening 162.

[0030] Meanwhile, the air inlet holes 130 may be distributed around the second opening 162 to avoid interference with the second opening 162. The opening direction of the second opening 162 may be perpendicular to the supporting direction so as to load and unload the wafer through the second opening 162.

[0031] In this structure, the opening direction of the second opening 162 can be perpendicular to the supporting direction, so that the wafer can be directly placed in or taken out from the sealing surface of the chamber cover to achieve the loading and unloading of the wafer, thereby facilitating the loading and unloading of the wafer. In this case, the process chamber is essentially a horizontal chamber. Optionally, the supporting direction can be parallel to the gravity direction, that is, the supporting direction is a vertical direction, which can reduce the influence of gravity in the vertical direction during the loading and unloading of the wafer, thereby reducing the risk of the wafer falling.

[0032] In addition, when the carrying device 200 includes a plurality of layers of supporting parts 210 as described below, each layer of supporting parts 210 can carry a wafer. In this case, the wafers on each layer of supporting parts 210 can be loaded and unloaded through the second opening 162 .

[0033] In one embodiment, the box body 160 may further include a first side wall 163, a second side wall 164, a third side wall 165, and a fourth side wall 166 connected end to end in sequence, the first side wall 163 and the third side wall 165 may be opposite to each other, the second side wall 164 and the fourth side wall 166 may be opposite to each other, and the exhaust hole 120, the air inlet hole 130, the first air supplement hole 140, and the second air supplement hole 150 may be respectively arranged on the first side wall 163, the third side wall 165, the second side wall 164, and the fourth side wall 166. This structure is relatively simple, easy to process and assemble, and is conducive to reducing costs.

[0034] In addition, in this case, the second opening 162 can be provided on the third side wall 165, and the air inlet holes 130 can be distributed around the second opening 162. In the case where there are multiple air inlet holes 130, the multiple air inlet holes 130 can be spaced and distributed on opposite sides of the second opening 162, so that the process gas can enter the inner cavity 110 more evenly. Optionally, multiple flow plate assemblies 300 can be respectively connected to the first side wall 163, the second side wall 164, the second cover 180 and the fourth side wall 166, so as to achieve the fixation of multiple flow plate assemblies 300. Specifically, multiple flow plate assemblies 300 can be respectively connected to the first side wall 163, the second side wall 164, the second cover 180 and the fourth side wall 166 by threaded connection or welding. In addition, in order to facilitate the flow of process gas, multiple flow plate assemblies 300 can be spaced and arranged with the first side wall 163, the second side wall 164, the second cover 180 and the fourth side wall 166, respectively.

[0035] In order to improve production efficiency, the carrier 200 may include a multi-layer support portion 210, and the multi-layer support portion 210 may be stacked and arranged at intervals along the support direction. In this structure, each layer of the support portion 210 can carry a wafer, so that the carrier 200 can carry multiple wafers, so that multiple wafers can be processed at the same time, which is conducive to improving production efficiency. At the same time, since the process chamber disclosed in the embodiment of the present application can make the process gas more uniform, when the multi-layer support portion 210 supports multiple layers of wafers for processing, the process quality will not be affected by the high and low positions of the wafers.

[0036] The support part 210 disclosed in the embodiment of the present invention may also have a heating function. Specifically, a heating component, such as a heating wire, may be buried in the support part 210, so that the support part 210 can not only support the wafer, but also heat the wafer, thereby ensuring the required process temperature during the wafer processing.

[0037] In a further embodiment, in the multi-layer support portion 210, one of two adjacent support portions 210 can be connected to a radio frequency power supply, and the other can be grounded, so that the radio frequency field formed between any two adjacent support portions 210 is more uniform, which is more conducive to ensuring the consistency of the process.

[0038] Based on the process chamber disclosed in the embodiment of the present application, the embodiment of the present application further discloses a semiconductor process equipment, which includes a RF component 400 and the process chamber described in any one of the above embodiments, wherein the chamber body 100 has a connecting hole, which is connected to the inner cavity 110, and the RF component 400 is arranged in the chamber body 100, wherein the RF component 400 can be fixed to the outer surface of the chamber body 100, and the RF component 400 is used to transmit RF energy to the inner cavity 110 through the connecting hole, so that plasma can be generated in the inner cavity 110 to enable the process to be carried out.

[0039] In an optional embodiment, the semiconductor process equipment may further include a pressure detector, a flow regulator and a controller. The pressure detector and the flow regulator may be connected to the controller respectively. The pressure detector may be used to detect the actual pressure of the inner cavity 110 and may feed back the actual pressure to the controller. The controller may be used to control the process gas flowing into the inner cavity 110 from the gas inlet hole 130 and the first gas supplement hole 140 through the flow regulator according to the actual pressure, so that the actual pressure reaches the preset pressure, so that the process gas can be stopped from being introduced into the inner cavity 110 when the actual pressure in the inner cavity 110 reaches the preset pressure. This structure can realize automatic control of the semiconductor process equipment through the cooperation of the pressure detector, the flow regulator and the controller, which is conducive to reducing labor costs and improving efficiency.

[0040] Of course, when the chamber body 100 is provided with a second gas supply hole 150, the controller can be used to control the process gas flowing into the inner cavity 110 from the gas inlet hole 130, the first gas supply hole 140 and the second gas supply hole 150 through the flow regulator according to the actual pressure so that the actual pressure reaches the preset pressure.

[0041] Specifically, the pressure detector may be an absolute pressure sensor or a capacitive pressure sensor, the flow regulator may be a mass flow controller, and the controller may be a PID controller (Proportion Integration Differentiation) or a PLC controller (Programmable Logic Controller), and the embodiments of the present application do not impose any restrictions on this.

[0042] The semiconductor process equipment disclosed in the embodiment of the present invention may be a plasma enhanced chemical vapor deposition (PECVD) device, or other similar process equipment. The embodiment of the present invention does not limit the specific type of semiconductor process equipment.

[0043] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0044] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A process chamber, characterized in that: It comprises a chamber body (100) and a carrying device (200); The chamber body (100) comprises an inner cavity (110), an exhaust hole (120), an air inlet hole (130) and a first air supplement hole (140); the exhaust hole (120), the air inlet hole (130) and the first air supplement hole (140) are respectively connected to the inner cavity (110); The supporting device (200) is arranged in the inner cavity (110) and is used to support the wafer along the supporting direction. The exhaust hole (120) and the air inlet hole (130) are respectively distributed on two opposite sides of the chamber body (100), and the first air supplement hole (140) is distributed between the exhaust hole (120) and the air inlet hole (130), and the exhaust hole (120), the air inlet hole (130) and the first air supplement hole (140) are all arranged on the circumference of the supporting direction of the supporting device (200).

2. The process chamber according to claim 1, characterized in that: The chamber body (100) further comprises a second air supply hole (150), wherein the second air supply hole (150) is distributed between the exhaust hole (120) and the air inlet hole (130), and the second air supply hole (150) and the first air supply hole (140) are respectively distributed on the other two opposite sides of the chamber body (100).

3. The process chamber according to claim 2, characterized in that: The process chamber further comprises a plurality of flow-distributing plate assemblies (300), wherein the plurality of flow-distributing plate assemblies (300) are all located in the inner cavity (110) and respectively cover the exhaust hole (120), the air inlet hole (130), the first air supply hole (140) and the second air supply hole (150).

4. The process chamber according to claim 3, characterized in that: The flow equalizer plate assembly (300) comprises a first flow equalizer plate (310) and a second flow equalizer plate (320), wherein the first flow equalizer plate (310) and the second flow equalizer plate (320) are arranged opposite to each other and spaced apart, the first flow equalizer plate (310) has a plurality of first flow equalizer holes (311), the second flow equalizer plate (320) has a plurality of second flow equalizer holes (321), and the plurality of first flow equalizer holes (311) are staggered with the plurality of second flow equalizer holes (321) respectively.

5. The process chamber according to claim 2, characterized in that: The chamber body (100) comprises a box body (160) and a first cover body (170); the exhaust hole (120), the air inlet hole (130), the first air supplement hole (140) and the second air supplement hole (150) are all arranged on the box body (160); The box body (160) has a first opening (161), the first cover body (170) is detachably sealed to the first opening (161), the first cover body (170) and the box body (160) enclose the inner cavity (110), and the opening direction of the first opening (161) is parallel to the supporting direction.

6. The process chamber according to claim 5, characterized in that: The chamber body (100) further includes a second cover body (180), and the box body (160) further includes a second opening (162). The second cover body (180) is detachably sealed to block the second opening (162), and the opening direction of the second opening (162) is perpendicular to the supporting direction so as to be used for loading and unloading the wafer through the second opening (162). The air inlet holes (130) are distributed around the second opening (162).

7. The process chamber according to claim 5, characterized in that: The box body (160) further comprises a first side wall (163), a second side wall (164), a third side wall (165) and a fourth side wall (166) which are connected end to end in sequence, the first side wall (163) and the third side wall (165) are opposite to each other, the second side wall (164) and the fourth side wall (166) are opposite to each other, and the exhaust hole (120), the air inlet hole (130), the first air supplement hole (140) and the second air supplement hole (150) are respectively arranged on the first side wall (163), the third side wall (165), the second side wall (164) and the fourth side wall (166).

8. The process chamber according to claim 1, characterized in that: The carrying device (200) comprises a plurality of layers of supporting parts (210), wherein the plurality of layers of supporting parts (210) are stacked and arranged at intervals from each other along the supporting direction.

9. A semiconductor process equipment, characterized in that: The process chamber comprises a radio frequency component (400) and any one of claims 1 to 8, wherein the chamber body (100) has a connecting hole, the connecting hole is connected to the inner cavity (110), and the radio frequency component (400) is arranged in the chamber body (100) and is used to transmit radio frequency energy to the inner cavity (110) through the connecting hole.

10. The semiconductor process equipment according to claim 9, characterized in that: The semiconductor process equipment further comprises a pressure detector, a flow regulator and a controller, wherein the pressure detector and the flow regulator are respectively connected to the controller, the pressure detector is used to detect the actual pressure of the inner cavity (110) and feed back the actual pressure to the controller, and the controller is used to control the process gas flowing into the inner cavity (110) from the air inlet hole (130) and the first air supply hole (140) through the flow regulator according to the actual pressure, so that the actual pressure reaches a preset pressure.

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