Substrate for vapor deposition and method of vapor deposition

Abstract

The embodiment of the invention discloses a substrate for vapor deposition and a vapor deposition method. The base comprises a main body and one or more support arms; a first cavity is formed in the main body; a second cavity is formed in the support arm; wherein the first port of the second cavity is communicated with the first cavity, and the second port of the second cavity is at least used for inputting reaction gas which reacts with the substrate.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and more particularly to a substrate for vapor deposition and a method for vapor deposition. Background Art

[0002] Graphite is a single substance composed of closely arranged carbon atoms, with high electrical conductivity, high thermal conductivity and high chemical stability, which makes graphite an important material in the semiconductor industry. For example, the use of graphite substrates made of graphite materials as core components of semiconductor processing equipment can effectively improve the processing accuracy and quality of semiconductor products, and play an irreplaceable role in the semiconductor chip industry chain.

[0003] In semiconductor processing, one or more films can be formed on a graphite substrate. However, the difference in thermal expansion coefficients between the graphite substrate and the film will generate stress inside the film, causing the film to crack. Summary of the invention

[0004] According to a first aspect of an embodiment of the present disclosure, a substrate is provided, comprising: a main body and one or more arms; a first cavity is provided in the main body; a second cavity is provided in the arm; wherein a first port of the second cavity is connected to the first cavity; and a second port of the second cavity is at least used for inputting a reaction gas that reacts with the substrate.

[0005] In some embodiments, there is a first distance between the top surface of the body and the top surface of the first cavity, a second distance between the bottom surface of the body and the bottom surface of the first cavity, and a third distance between the side wall of the body and the side wall of the first cavity; wherein the third distance is greater than the first distance and the second distance.

[0006] In some embodiments, there is a fourth distance between the top surface of the arm and the top surface of the second cavity, and the fourth distance is greater than the first distance and the second distance; there is a fifth distance between the bottom surface of the arm and the bottom surface of the second cavity, and the fifth distance is greater than the first distance and the second distance.

[0007] In some embodiments, the second pitch is equal to the first pitch.

[0008] In some embodiments, the second port of the second cavity is further used to output a product generated by a reaction with the substrate.

[0009] In some embodiments, the substrate includes a plurality of arms; wherein the second port of the second cavity in a portion of the arms among the plurality of arms is used to input the reaction gas, and the second port of the second cavity in another portion of the arms among the plurality of arms is used to output a product generated by reaction with the substrate.

[0010] In some embodiments, the main body is in the shape of a ring, and the support arm extends in a direction toward the center of the ring; or, the main body is in the shape of a disk, and the support arm extends in a direction away from the center of the disk.

[0011] In some embodiments, the material of the substrate includes graphite.

[0012] According to a second aspect of an embodiment of the present disclosure, a method for vapor deposition is provided, comprising: providing a substrate; wherein the substrate comprises a main body and one or more arms, a first cavity is provided in the main body, a second cavity is provided in the arm, and a first port of the second cavity is connected to the first cavity; at a first temperature, inputting a reaction gas that reacts with the substrate through the second port of the second cavity to remove at least a portion of the substrate; after removing at least a portion of the substrate, cooling the substrate from the first temperature to a second temperature.

[0013] In some embodiments, at the first temperature, a portion of the substrate is removed; the method further includes: at the first temperature and before the reaction gas is input, forming a component covering the surface of the substrate; wherein the difference between the thermal expansion coefficient of the component and the thermal expansion coefficient of the substrate is greater than a preset value; after the component is cooled to the second temperature, removing the remaining substrate.

[0014] In some embodiments, the material of the substrate includes graphite; the material of the component includes at least one of silicon carbide, boron carbide, tantalum carbide, and tungsten carbide.

[0015] According to a third aspect of an embodiment of the present disclosure, there is provided a substrate for vapor deposition, comprising: a main body and one or more arms; the main body comprises a first part and a second part arranged in the first part; wherein the density of the second part is less than the density of the first part; a cavity is arranged in the arm; wherein the first port of the cavity is connected to the second part; the second port of the cavity is at least used for inputting a reaction gas that reacts with the substrate.

[0016] In some embodiments, the second portion has mesopores.

[0017] In some embodiments, the second port of the cavity is further used to output a product generated by a reaction with the substrate.

[0018] In some embodiments, the substrate includes a plurality of arms; wherein the second port of the cavity within a portion of the arms among the plurality of arms is used to input the reaction gas, and the second port of the cavity within another portion of the arms among the plurality of arms is used to output a product generated by reaction with the substrate.

[0019] In some embodiments, the material of the substrate includes graphite.

[0020] According to a fourth aspect of an embodiment of the present disclosure, a method for vapor deposition is provided, comprising: providing a substrate; wherein the substrate comprises a main body and one or more arms, the main body comprises a first part and a second part arranged in the first part, the density of the second part is less than the density of the first part; a cavity is provided in the arm, and a first port of the cavity is connected to the second part; at a first temperature, a reaction gas that reacts with the substrate is input through the second port of the cavity to remove at least part of the substrate; after removing at least part of the substrate, the substrate is cooled from the first temperature to a second temperature.

[0021] In some embodiments, at the first temperature, a portion of the substrate is removed; the method further includes: at the first temperature and before the reaction gas is input, forming a component covering the surface of the substrate; wherein the difference between the thermal expansion coefficient of the component and the thermal expansion coefficient of the substrate is greater than a preset value; after the component is cooled to the second temperature, removing the remaining substrate.

[0022] In the embodiment of the present disclosure, a first cavity is provided in the main body of the substrate and a second cavity is provided in the support arm of the substrate, and a first port of the second cavity is connected to the first cavity, and a second port of the second cavity is at least used to input a reaction gas that reacts with the substrate. When the substrate is used to prepare parts at high temperature, the reaction gas that reacts with the substrate can be input through the second port of the second cavity before cooling to remove at least part of the substrate, thereby reducing stress, which is beneficial to improving the yield and mechanical strength of the finally formed parts. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 is a schematic diagram of a semiconductor device according to an exemplary embodiment.

[0024] Figure 2 It is a schematic diagram showing a manufacturing process of a component according to an exemplary embodiment.

[0025] Figure 3 is an electron microscope image of a graphite substrate formed with a silicon carbide material layer according to an exemplary embodiment.

[0026] Figure 4 is a schematic diagram of a substrate according to the first embodiment of the present disclosure.

[0027] Figure 5 is a schematic diagram of a substrate according to the second embodiment of the present disclosure.

[0028] Figure 6 is a schematic diagram of a substrate according to the third embodiment of the present disclosure.

[0029] Figure 7 is a schematic diagram of a substrate according to the fourth embodiment of the present disclosure.

[0030] Figure 8 is a schematic diagram of a substrate according to the fifth embodiment of the present disclosure.

[0031] Fig. 9 is a schematic diagram of mesoporous graphite according to an embodiment of the present disclosure.

[0032] Fig.10 is a flow chart of a vapor deposition method according to the first embodiment of the present disclosure.

[0033] Fig.11 and Fig.12 It is a schematic diagram of a manufacturing process of a component according to the first embodiment of the present disclosure.

[0034] Fig.13 It is a schematic diagram of a component manufacturing process according to the second embodiment of the present disclosure.

[0035] Fig.14 is a flow chart of a vapor deposition method according to the second embodiment of the present disclosure. DETAILED DESCRIPTION

[0036] In order to facilitate the understanding of the present disclosure, the exemplary embodiments of the present disclosure will be described in more detail below with reference to the relevant drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0037] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In some embodiments, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of the actual embodiment may not be described here, and well-known functions and structures may not be described in detail.

[0038] The present disclosure will be described in more detail below by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will become more apparent from the following description and claims. It should be noted that the accompanying drawings are in a very simplified form and are not in exact proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present disclosure.

[0039] It will be understood that the meaning of “on,” “over,” and “over” of the present disclosure should be interpreted in the broadest manner, so that “on” not only means that it is “on” something with no intervening features or layers (i.e., directly on something), but also includes the meaning that it is “on” something with intervening features or layers.

[0040] In the embodiments of the present disclosure, the terms "first", "second", "third", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0041] In the disclosed embodiments, the term "layer" refers to a material portion including an area having a thickness. A layer may extend over the entirety of a lower or upper structure, or may have an extent less than the extent of a lower or upper structure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure having a thickness less than the thickness of a continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or a layer may be between any horizontal faces at the top and bottom surfaces of a continuous structure. A layer may extend horizontally, vertically, and / or along an inclined surface. A layer may include multiple sublayers.

[0042] It should be noted that the technical solutions described in the embodiments of the present disclosure can be arbitrarily combined without conflict.

[0043] Figure 1 It is a schematic diagram of a semiconductor device according to an exemplary embodiment. The semiconductor device includes a chemical vapor deposition (CVD) device, a metal-organic chemical vapor deposition (MOCVD) device, etc. In this example, the semiconductor device is a CVD device as an example for exemplary description.

[0044] Reference Figure 1 As shown, a plurality of graphite substrates 10 are installed in the CVD device. Since the graphite substrate 10 is in a ring shape, it is also called a graphite ring. In the process of preparing a material layer such as silicon carbide (SiC) on the graphite substrate 10, it is usually necessary to carry out the process in a high-temperature CVD device above 1000°C. However, due to the difference in thermal expansion coefficients between the graphite substrate 10 and the prepared material layer, when the CVD device is cooled, stress will be generated in the prepared material layer due to the difference in thermal expansion coefficients, resulting in cracking of the prepared material layer, thereby reducing the yield.

[0045] Figure 2 It is a schematic diagram of a manufacturing process of a component according to an exemplary embodiment. The material of the component includes at least one of SiC, boron carbide (B4C), tantalum carbide (TaC), and tungsten carbide (WC). In this example, SiC is used as the material of the component for exemplary description.

[0046] At high temperatures, Figure 1 A silicon carbide material layer 20 is formed on the surface of the graphite substrate 10. Figure 2 Figure (a) is a top view of a graphite substrate with a silicon carbide material layer formed on the surface. Figure 2 Figure (b) shows the Figure 2 The cross-sectional view of the dotted line AA' in FIG. (a) is shown. Due to the difference in thermal expansion coefficients between the graphite substrate 10 and the silicon carbide material layer 20, the stress in the silicon carbide material layer 20 during cooling may cause cracks on its surface. Figure 2 Figure (c) is a schematic diagram of cracks generated on the surface of the silicon carbide material layer 20.

[0047] Figure 3 An electron microscope image of a graphite substrate with a silicon carbide material layer formed on the surface is shown. Figure 3 As shown in the figure, obvious cracks appear on the surface of silicon carbide, which will lead to a decrease in the yield and mechanical strength of the final parts.

[0048] Based on one or more of the above technical problems, an embodiment of the present disclosure provides a substrate for vapor deposition.

[0049] Figure 4 is a schematic diagram of a substrate according to the first embodiment of the present disclosure, which can be used for vapor deposition. Figure 4 Figure (a) is a top view of the substrate. Figure 4 Figure (b) shows the Figure 4 (a) is a cross-sectional view taken along the dotted line BB' in FIG.

[0050] Reference Figure 4As shown, the substrate 100 includes: a main body 110 and one or more arms 120; a first cavity 111 is provided in the main body 110; a second cavity 121 is provided in the arm 120; wherein a first port 120a of the second cavity 121 is connected to the first cavity 111; and a second port 120b of the second cavity 121 is at least used for inputting a reaction gas that reacts with the substrate 100.

[0051] In the embodiment of the present disclosure, a first cavity 111 is provided in the main body 110 of the substrate 100 and a second cavity 121 is provided in the arm 120 of the substrate 100, and a first port 120a of the second cavity 121 is connected to the first cavity 111, and a second port 120b of the second cavity 121 is at least used to input a reaction gas that reacts with the substrate 100. In some possible embodiments, the product after the reaction gas reacts with the substrate 100 is a gas, and the product after the reaction (i.e., the product) is discharged through the second cavity 121 or other outlets. In some possible embodiments, the product after the reaction gas reacts with the substrate 100 is a loose solid, such as powder. In this way, a hollow substrate can be formed. When a component is prepared using the hollow substrate, a reaction gas that reacts with the substrate can be input through the second port of the second cavity before cooling to remove at least part of the substrate, thereby reducing stress, which is conducive to improving the yield and mechanical strength of the component finally formed.

[0052] In some embodiments, the material of the substrate 100 includes at least one of graphite, silicon, polycrystalline silicon, and monocrystalline silicon. In the embodiments of the present disclosure, the substrate 100 is a graphite substrate. It should be noted that the main body 110 and the support arm 120 of the substrate 100 can be an integrally formed structure. In other embodiments, the upper half and the lower half of the substrate 100 can also be joined to form a Figure 4 A substrate 100 is shown.

[0053] In some embodiments, the number of the support arms 120 can be one or more, for example, Figure 4 Figure (a) shows four arms 120. In practical applications, the number of arms 120 may be less than 4 or more than 4. The second port 120b of the second cavity 121 in the arm 120 may be connected to an inlet device and / or an exhaust device. The inlet device is used to input a reaction gas, and the exhaust device is used to exhaust a product generated by a reaction with the substrate 100. Taking a graphite substrate as an example, the reaction gas may be oxygen (O2), and the product may be at least one of carbon monoxide (CO) and carbon dioxide (CO2). In practical applications, the reaction gas may be reasonably selected according to the material of the substrate 100.

[0054] In some embodiments, the second port 120b of the second cavity 121 is also used to output the product generated by the reaction with the substrate 100. It can be understood that the second port 120b of the second cavity 121 in this embodiment can be used for both air intake and discharge of the product, thereby improving the uniformity of removing the graphite substrate. Therefore, the second port 120b of the second cavity 121 can be connected to the air intake device and the discharge device respectively.

[0055] In some embodiments, the substrate 100 includes a plurality of arms 120; wherein the second port 120b of the second cavity 121 in a portion of the plurality of arms 120 is used to input the reaction gas, and the second port 120b of the second cavity 121 in another portion of the plurality of arms 120 is used to output the product generated by the reaction with the substrate 100. It can be understood that in this embodiment, the second port 120b of the second cavity 121 in a portion of the arms 120 is used for gas intake, and the second port 120b of the second cavity 121 in another portion of the arms 120 is used to discharge the product. Therefore, the second port 120b for gas intake can be connected to the gas intake device, and the second port 120b for discharging the product can be connected to the discharge device.

[0056] It should be noted that, in the above embodiment, the second port 120b of the second cavity 121 can be connected to the air intake device through an air intake pipe and connected to the air exhaust device through an air exhaust pipe. The air intake pipe and the air exhaust pipe can be respectively provided with a first valve and a second valve. The first valve is used to control the conduction or shutoff of the air intake pipe, and the second valve is used to control the conduction or shutoff of the air exhaust pipe, thereby realizing the input of the reaction gas and the output of the product.

[0057] In some embodiments, the main body 110 is annular, and the arm 120 extends in a direction toward the center of the ring. It is understood that in this embodiment, the main body 110 is annular, and the arm 120 can be located on the side of the main body 110, more specifically, the arm 120 can be located on the inner side of the main body 110. In other embodiments, the arm 120 can be located below the main body 110.

[0058] In some embodiments, reference Figure 4 As shown, the height h2 of the second cavity 121 is less than the height h1 of the first cavity 111, which is more conducive to the full reaction between the substrate and the reaction gas and is conducive to improving the production efficiency of components. It should be noted that the height used in this embodiment and below represents the size of the cavity in the vertical direction.

[0059] Figure 5 1 is a schematic diagram of a substrate according to the second embodiment of the present disclosure. Figure 4 For the sake of brevity, the related description of the first embodiment is not repeated. Figure 4 The difference from the first embodiment is that Figure 5 In the second embodiment, the first cavity 111 and the second cavity 121 have the same height. Figure 5 As shown, the height h2 ′ of the second cavity 121 is equal to the height h1 of the first cavity 111 . This can reduce the difficulty of manufacturing the hollow substrate and is more conducive to the industrialization of the hollow substrate.

[0060] Figure 6 1 is a schematic diagram of a substrate according to the third embodiment of the present disclosure. Figure 4 For the sake of brevity, the related description of the first embodiment is not repeated. Figure 4 The difference from the first embodiment is that Figure 6 In the third embodiment, the spacing between the substrate 100 is different. Figure 6 The spacing settings at various locations on the substrate 100 are described as examples.

[0061] Reference Figure 6 As shown, there is a first spacing H1 between the top surface TS1 of the main body 110 and the top surface TS2 of the first cavity 111, a second spacing H2 between the bottom surface BS1 of the main body 110 and the bottom surface BS2 of the first cavity 111, and a third spacing W1 / W2 between the side wall of the main body 110 and the side wall of the first cavity 111; wherein the third spacing W1 / W2 is greater than the first spacing H1 and the second spacing H2.

[0062] In the embodiment of the present disclosure, by setting the third spacing W1 / W2 to be larger than the first spacing H1 and the second spacing H2, after removing the upper and lower portions of the main body 110 by thermal oxidation reaction, the sidewall portion of the main body 110 still remains, such as Fig.13 As shown, the remaining part of the side wall of the main body 110 can be used as an auxiliary support structure to support the components (eg, silicon carbide material layer) formed on the surface of the main body 110 to prevent the components from collapsing.

[0063] In some embodiments, there is a fourth distance H3 between the top surface TS3 of the arm 120 and the top surface TS4 of the second cavity 121, and the fourth distance H3 is greater than the first distance H1 and the second distance H2; there is a fifth distance H4 between the bottom surface BS3 of the arm 120 and the bottom surface BS4 of the second cavity 121, and the fifth distance H4 is greater than the first distance H1 and the second distance H2.

[0064] In the embodiment of the present disclosure, by setting the fourth spacing H3 to be larger than the first spacing H1 and the second spacing H2, and the fifth spacing H4 to be larger than the first spacing H1 and the second spacing H2, after removing the upper and lower parts of the main body 110 by thermal oxidation reaction, the upper and lower parts of the support arm 120 still remain, such as Fig.13 As shown, the remaining upper and lower parts of the support arm 120 can also serve as auxiliary support structures to support components (eg, silicon carbide material layer) formed on the surface of the support arm 120 to further prevent the components from collapsing.

[0065] In some embodiments, the second spacing H2 is equal to the first spacing H1. It can be understood that in the embodiment of the present disclosure, the second spacing H2 is the same as the first spacing H1, which is more conducive to the manufacture of the substrate 100. Of course, in other embodiments, the second spacing H2 and the first spacing H1 may be different, for example, the second spacing H2 is greater than the first spacing H1 or the second spacing H2 is less than the first spacing H1.

[0066] Figure 7 is a schematic diagram of a substrate according to the fourth embodiment of the present disclosure. Figure 7 Figure (a) is a top view of the substrate. Figure 7 Figure (b) shows the Figure 7 (a) is a cross-sectional view of the dotted line CC' in FIG. For the main body 110 and the support arm 120, please refer to Figure 4 For the sake of brevity, the related description of the first embodiment is not repeated. Figure 4 The difference from the first embodiment is that Figure 7 The shape of the main body 110 and the position of the support arm 120 are different in the fourth embodiment. Figure 7 The shape of the main body 110 and the position of the arm 120 are exemplarily described.

[0067] Reference Figure 7 As shown, the main body 110 is disc-shaped, and the arm 120 extends in a direction away from the center of the disc. It can be understood that in this embodiment, the main body 110 is disc-shaped, and the arm 120 can be located on the side of the main body 110, more specifically, the arm 120 can be located on the outer side of the main body 110. In other embodiments, the arm 120 can be located below the main body 110.

[0068] In the embodiment of the present disclosure, the main body 110 is set to be disc-shaped, and the support arm 120 is located at the outer side of the main body 110 and extends in a direction away from the center of the disc, which can be suitable for the production of different parts. In practical applications, the shape of the main body and the position of the support arm can be reasonably designed according to the parts to be produced.

[0069] Figure 8 is a schematic diagram of a substrate according to the fifth embodiment of the present disclosure. Figure 8 As shown, the substrate 200 includes: a main body 210 and one or more arms 220; the main body 210 includes a first part 211 and a second part 212 arranged in the first part 211; wherein the density of the second part 212 is less than the density of the first part 211; a cavity 221 is arranged in the arm 220; wherein the first port 220a of the cavity 221 is connected to the second part 212; the second port 220b of the cavity 221 is at least used for inputting reaction gas that reacts with the substrate 200.

[0070] In the embodiment of the present disclosure, a second portion 212 having a density less than that of the first portion 211 is provided in the first portion 211 of the main body 210, and a cavity 221 is provided in the arm 220, and a first port 220a of the cavity 221 is connected to the second portion 212, and a second port 220b of the cavity 221 is at least used to input a reaction gas that reacts with the substrate 200. In this way, when using the substrate to prepare a component, a reaction gas that reacts with the substrate can be input through the second port of the cavity before cooling. Since the density of the second portion is less than that of the first portion, the reaction gas can diffuse into the gap of the second portion to remove at least part of the substrate, thereby reducing stress, which is beneficial to improving the yield rate and mechanical strength of the component finally formed.

[0071] In some embodiments, the material of the substrate 200 includes at least one of graphite, silicon, polycrystalline silicon, and monocrystalline silicon. In the embodiments of the present disclosure, the substrate 200 is a graphite substrate. It should be noted that the main body 210 and the support arm 220 of the substrate 200 can be an integrally formed structure. In other embodiments, the upper half and the lower half of the substrate 200 can also be joined to form a Figure 8 A substrate 200 is shown.

[0072] In some embodiments, the second portion 212 has mesopores, that is, the second portion 212 is a mesoporous structure. For example, taking a graphite substrate as an example, Fig. 9 As shown, the second portion 212 may be mesoporous graphite, so that the density of the second portion 212 is less than the density of the first portion 211 .

[0073] In some embodiments, the number of the support arms 220 may be one or more. Figures 4 to 6 Related description of embodiments of the present invention.

[0074] In some embodiments, the second port 220b of the cavity 221 is also used to output the product generated by the reaction with the substrate 200. It can be understood that the second port 220b of the cavity 221 in this embodiment can be used for both air intake and discharge of the product. Therefore, the second port 220b of the cavity 221 can be connected to the air intake device and the discharge device respectively.

[0075] In some embodiments, the substrate 200 includes a plurality of arms 220, wherein the second port 220b of the cavity 221 in a portion of the plurality of arms 220 is used to input the reaction gas, and the second port 220b of the cavity 221 in another portion of the plurality of arms 220 is used to output the product generated by the reaction with the substrate 200. It can be understood that in this embodiment, the second port 220b of the cavity 221 in a portion of the arms 220 is used for gas intake, and the second port 220b of the cavity 221 in another portion of the arms 220 is used to discharge the product. Therefore, the second port 220b for gas intake can be connected to the gas intake device, and the second port 220b for discharging the product can be connected to the discharge device.

[0076] It should be noted that, in the above embodiment, the second port 220b of the cavity 221 can be connected to the intake device through an intake pipe and connected to the exhaust device through an exhaust pipe. The intake pipe and the exhaust pipe can be respectively provided with a first valve and a second valve. The first valve is used to control the conduction or shutoff of the intake pipe, and the second valve is used to control the conduction or shutoff of the exhaust pipe, thereby realizing the input of the reaction gas and the output of the product.

[0077] In some embodiments, reference Figure 8 As shown, the height of the cavity 221 is smaller than the height of the second portion 212 , which is more conducive to a full reaction between the substrate and the reaction gas and is conducive to improving the production efficiency of components.

[0078] In other embodiments, the height of the cavity is equal to the height of the second part, which can reduce the difficulty of manufacturing the hollow substrate and is more conducive to the industrialization of the hollow substrate. Figure 5 For the sake of brevity, the relevant description of the second embodiment is not repeated here.

[0079] Based on the above substrate, an embodiment of the present disclosure provides a vapor deposition method, which can be used to prepare parts of semiconductor processing equipment.

[0080] Fig.10 FIG. 1 is a flow chart of a vapor deposition method according to the first embodiment of the present disclosure. Fig.10 As shown, the method comprises at least the following steps:

[0081] S310: providing a substrate; wherein the substrate comprises a main body and one or more arms, a first cavity is provided in the main body, a second cavity is provided in the arm, and a first port of the second cavity is connected to the first cavity;

[0082] S320: inputting a reaction gas that reacts with the substrate through a second port of the second cavity at a first temperature to remove at least a portion of the substrate;

[0083] S330: After removing at least a portion of the substrate, cooling the substrate from the first temperature to a second temperature.

[0084] In the method provided by the embodiment of the present disclosure, at a first temperature, a reaction gas that reacts with the substrate is input through the second port of the second cavity to remove at least a portion of the substrate; after removing at least a portion of the substrate, the substrate is cooled from the first temperature to the second temperature. In this way, stress can be reduced, which is beneficial to improving the yield rate and mechanical strength of components.

[0085] Fig.11 and Fig.12 This is a schematic diagram of a manufacturing process of a component according to the first embodiment of the present disclosure. Fig.10 , Fig.11 and Fig.12 The method provided in the first embodiment of the present disclosure is exemplarily described.

[0086] In step S310, refer to Fig.11 As shown, a substrate 100 is provided, and the material of the substrate 100 includes graphite. Figure 4 , Figure 5 or Figure 7 For the sake of brevity, the relevant descriptions in are not repeated here.

[0087] In step S320, at the first temperature, a reaction gas that reacts with the substrate 100 is input through the second port of the second cavity to remove at least a portion of the substrate 100. The remaining substrate 100′ is as shown in FIG. Fig.12 As shown. Taking the graphite substrate as an example, O2 can be input, and O2 and the graphite substrate undergo a thermal oxidation reaction to generate CO2. In practical applications, the reaction gas can be reasonably selected according to the material of the substrate. Here, the amount of substrate removed can be controlled by controlling at least one of the flow rate of the reaction gas, the concentration of the reaction gas, the reaction time, and the reaction temperature, that is, the substrate can be completely removed or partially removed.

[0088] In some embodiments, reference Fig.11As shown, the method further includes: forming a component 400 covering the surface of the substrate 100 at a first temperature and before inputting the reaction gas; wherein the difference between the thermal expansion coefficient of the component 400 and the thermal expansion coefficient of the substrate 100 is greater than a preset value. The first temperature may be a reaction temperature required to form the component 400, and the present disclosure has no special restrictions on this. The material of the component 400 includes at least one of SiC, boron carbide (B4C), tantalum carbide (TaC), and tungsten carbide (WC). The preset value can be reasonably set according to actual conditions. For example, if the quality and strength requirements of the component 400 are high, the preset value can be set to be smaller. For another example, if the quality and strength requirements of the component 400 are average, the preset value can be set to be larger.

[0089] In step S330, refer to Fig.12 As shown, after removing at least a portion of the substrate 100, the substrate 100 is cooled from the first temperature to the second temperature. It can be understood that the second temperature is lower than the first temperature, for example, the second temperature can be room temperature.

[0090] In some embodiments, at the first temperature, part of the substrate is removed; the method further comprises: after the component 400 is cooled to the second temperature, removing the remaining substrate 100'. In the embodiment of the present disclosure, since part of the substrate has been removed before the component 400 is cooled, the subsequent process of removing the remaining substrate can be reduced.

[0091] Fig.13 is a schematic diagram of a component manufacturing process according to the second embodiment of the present disclosure. Fig.11 as well as Fig.12 For the sake of brevity, the relevant description is not repeated here. Fig.11 as well as Fig.12 The production process is different in that Fig.13 The substrate used in the invention is different. Specifically, Figure 6 The substrate 100 shown is used to make the component 400. After the upper and lower parts of the main body are removed by thermal oxidation, the side wall part of the main body and the upper and lower parts of the arm are still left, and the remaining substrate can be used as an auxiliary support structure to support the component 400 formed on the surface of the substrate to prevent the component 400 from collapsing.

[0092] Fig.14 FIG. 1 is a flow chart of a vapor deposition method according to the second embodiment of the present disclosure. Fig.14 As shown, the method comprises at least the following steps:

[0093] S510: providing a substrate; wherein the substrate comprises a main body and one or more arms, the main body comprises a first portion and a second portion disposed in the first portion, the density of the second portion is less than the density of the first portion; a cavity is disposed in the arm, and a first port of the cavity is connected to the second portion;

[0094] S520: inputting a reaction gas that reacts with the substrate through the second port of the cavity at a first temperature to remove at least a portion of the substrate;

[0095] S530: After removing at least a portion of the substrate, cooling the substrate from the first temperature to a second temperature.

[0096] In the method provided by the embodiment of the present disclosure, at a first temperature, a reaction gas that reacts with the substrate is input through the second port of the cavity to remove at least a portion of the substrate; after removing at least a portion of the substrate, the substrate is cooled from the first temperature to a second temperature. In this way, stress can be reduced, which is beneficial to improving the yield rate and mechanical strength of components.

[0097] It should be noted that steps S510 to S530 are similar to steps S310 to S330. For steps S510 to S530, reference may be made to the relevant description of steps S310 to S330. For the sake of brevity, no further description will be given. Figure 8 A substrate 200 is shown.

[0098] In some embodiments, at a first temperature, a portion of the substrate is removed; the method further comprises: forming a component covering the surface of the substrate at the first temperature and before inputting a reaction gas; wherein the difference between the thermal expansion coefficient of the component and the thermal expansion coefficient of the substrate is greater than a preset value; after the component is cooled to a second temperature, removing the remaining substrate.

[0099] Based on the above vapor deposition method, the embodiment of the present disclosure provides a component, which is manufactured by the method in any of the above embodiments. The component can be used as at least one of a focus ring, a shower head, a tray, and an edge ring in a semiconductor processing device.

[0100] Semiconductor processing equipment can be thin film deposition equipment or etching equipment. Thin film deposition equipment includes CVD equipment, MOCVD equipment, physical vapor deposition (PVD) equipment, atomic layer deposition (ALD) equipment, etc. Etching equipment includes reactive ion etching (RIE) equipment, inductively coupled plasma etching (ICP) equipment, magnetic neutral line plasma etching (NLD) equipment, ion beam etching (IBE) equipment, etc.

[0101] The above description is only a specific implementation mode of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure.

Claims

1. A substrate for vapor deposition, characterized in that: include: A main body, wherein a first cavity is provided in the main body; One or more arms, wherein a second cavity is provided in the arm; wherein a first port of the second cavity is connected to the first cavity; and a second port of the second cavity is at least used for inputting a reaction gas that reacts with the substrate.

2. The substrate according to claim 1, characterized in that There is a first distance between the top surface of the main body and the top surface of the first cavity, a second distance between the bottom surface of the main body and the bottom surface of the first cavity, and a third distance between the side wall of the main body and the side wall of the first cavity; wherein the third distance is greater than the first distance and the second distance.

3. The substrate according to claim 2, characterized in that There is a fourth distance between the top surface of the support arm and the top surface of the second cavity, and the fourth distance is greater than the first distance and the second distance; there is a fifth distance between the bottom surface of the support arm and the bottom surface of the second cavity, and the fifth distance is greater than the first distance and the second distance.

4. The substrate according to claim 2 or 3, characterized in that The second interval is equal to the first interval.

5. The substrate according to claim 1, characterized in that The second port of the second cavity is also used to output a product generated by a reaction with the substrate.

6. The substrate according to claim 1, characterized in that The substrate includes a plurality of arms; wherein the second port of the second cavity in a portion of the arms is used to input the reaction gas, and the second port of the second cavity in another portion of the arms is used to output a product generated by a reaction with the substrate.

7. The substrate according to claim 1 or 6, characterized in that The main body is in the shape of a ring, and the support arm extends in a direction toward the center of the ring; or, the main body is in the shape of a disk, and the support arm extends in a direction away from the center of the disk.

8. The substrate according to claim 1, characterized in that The material of the substrate includes graphite.

9. A method of vapor deposition, characterized in that: include: A substrate is provided; wherein the substrate comprises a main body and one or more arms, a first cavity is provided in the main body, a second cavity is provided in the arm, and a first port of the second cavity is connected to the first cavity; At a first temperature, inputting a reaction gas that reacts with the substrate through a second port of the second cavity to remove at least a portion of the substrate; After removing at least a portion of the substrate, the substrate is cooled from the first temperature to a second temperature.

10. The method according to claim 9, characterized in that At the first temperature, a portion of the substrate is removed; the method further comprising: At the first temperature and before the reaction gas is input, a component covering the surface of the substrate is formed; wherein the difference between the thermal expansion coefficient of the component and the thermal expansion coefficient of the substrate is greater than a preset value; After the component is cooled to the second temperature, the remaining substrate is removed.

11. The method according to claim 10, characterized in that The material of the substrate includes graphite; the material of the component includes at least one of silicon carbide, boron carbide, tantalum carbide and tungsten carbide.

12. A substrate for vapor deposition, characterized in that: include: A main body, the main body comprising a first part and a second part disposed in the first part; wherein the density of the second part is less than the density of the first part; One or more arms, each arm having a cavity therein; wherein a first port of the cavity is connected to the second part; and a second port of the cavity is at least used for inputting a reaction gas that reacts with the substrate.

13. The substrate according to claim 12, characterized in that The second portion has mesopores.

14. The substrate according to claim 12, characterized in that The second port of the cavity is also used to output a product generated by a reaction with the substrate.

15. The substrate according to claim 12, characterized in that The substrate includes a plurality of arms; wherein the second port of the cavity in a portion of the arms is used to input the reaction gas, and the second port of the cavity in another portion of the arms is used to output a product generated by reaction with the substrate.

16. The substrate according to claim 12, characterized in that The material of the substrate includes graphite.

17. A method of vapor deposition, characterized in that: include: A substrate is provided; wherein the substrate comprises a main body and one or more arms, the main body comprises a first part and a second part arranged in the first part, the density of the second part is less than the density of the first part; a cavity is arranged in the arm, and a first port of the cavity is connected to the second part; At a first temperature, inputting a reaction gas that reacts with the substrate through a second port of the cavity to remove at least a portion of the substrate; After removing at least a portion of the substrate, the substrate is cooled from the first temperature to a second temperature.

18. The method according to claim 17, characterized in that At the first temperature, a portion of the substrate is removed; the method further comprising: At the first temperature and before the reaction gas is input, a component covering the surface of the substrate is formed; wherein the difference between the thermal expansion coefficient of the component and the thermal expansion coefficient of the substrate is greater than a preset value; After the component is cooled to the second temperature, the remaining substrate is removed.

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