Gas path flow stabilizing device for thin film deposition and thin film deposition equipment

Abstract

The invention discloses a gas path flow stabilizing device for thin film deposition and thin film deposition equipment, the gas path flow stabilizing device for thin film deposition comprises a reaction cavity, a precursor pipeline, a preceding-stage pipeline and a branch pipeline, the precursor pipeline is connected with the reaction cavity, and the preceding-stage pipeline is connected with the reaction cavity; the preceding-stage pipeline is connected with the precursor pipeline through the branch pipeline, and the precursor pipeline is divided into a first-section pipeline far away from the reaction cavity and a second-section pipeline close to the reaction cavity by a connecting node of the branch pipeline and the precursor pipeline; wherein the branch pipeline and / or the first section pipeline are / is provided with a pressure control device, and the pressure control device is configured to enable the pressure on the branch pipeline to be consistent with the pressure of the reaction cavity. The pressure difference between the reaction cavity and the branch pipeline is eliminated through the pressure control device, flow fluctuation during gas switching is avoided, and the quality and effect of thin film deposition are improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a gas path flow stabilization device for thin film deposition and thin film deposition equipment. Background Art

[0002] In semiconductor manufacturing and microelectronic device processing, thin film deposition is a crucial technology. It forms one or more layers of thin films with specific functions on a substrate through methods such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). Among them, the chemical vapor deposition technology using tetraethoxysilane (TEOS) as a precursor is widely used in integrated circuits, optoelectronic devices and other fields because of its uniform and dense film formation and can be carried out at a lower temperature. In order to ensure the quality and performance of the film, the control of the repeatability and accuracy of the TEOS flow is particularly critical. TEOS enters the gas delivery system after being vaporized from the liquid source, and finally reaches the reaction chamber for deposition reaction. However, in actual operation, TEOS gas will first be introduced into the foreline (foreline pipeline). This process is designed to make the gas flow reach a stable state to avoid the problem of uneven film thickness caused by unstable flow when directly introduced into the reaction chamber. After the flow is stable, switch to the reaction chamber for deposition. However, due to the significant pressure difference between the fore line and the reaction chamber, when the gas is switched from the fore line to the reaction chamber, the pressure at the outlet of the TEOS liquid source vaporizer (MV) will change suddenly, causing fluctuations in the readings of the liquid source flow meter (LFM), which not only affects the accuracy of the flow rate but may also have a negative impact on the deposition process. Summary of the invention

[0003] The embodiments of the present invention provide a gas path flow stabilization device and a thin film deposition apparatus for thin film deposition, aiming to solve the problem of gas flow fluctuation caused by the pressure difference between the fore line and the reaction chamber when the existing gas is switched.

[0004] In a first aspect, the present invention provides a gas path flow stabilization device for thin film deposition, comprising: a reaction chamber, a precursor pipeline, a front-stage pipeline and a branch pipeline, wherein the precursor pipeline is connected to the reaction chamber, the front-stage pipeline is connected to the precursor pipeline through the branch pipeline, and a connection node between the branch pipeline and the precursor pipeline divides the precursor pipeline into a first section of the pipeline away from the reaction chamber and a second section of the pipeline close to the reaction chamber;

[0005] Wherein, a pressure control device is provided on the branch pipeline and / or the first section pipeline, and the pressure control device is configured to make the pressure on the branch pipeline consistent with the pressure of the reaction chamber.

[0006] Furthermore, the pressure control device is a needle valve, there is a pressure difference between the branch pipeline and the reaction chamber, and the opening of the needle valve is configured to match the pressure difference.

[0007] Furthermore, the pressure control device is a flow restrictor, the flow restrictor has an opening, there is a pressure difference between the branch pipeline and the reaction chamber, and the caliber of the opening is configured to match the pressure difference.

[0008] Furthermore, the pressure control device is a pressure controller for automatically adjusting the pressure of the branch pipeline, and the pressure controller is configured so that its target pressure value matches the pressure of the reaction chamber.

[0009] Furthermore, the pressure control device is a pressure controller for automatically adjusting the pressure of the first section of the pipeline, and the pressure controller is configured so that its target pressure value matches the pressure of the reaction chamber.

[0010] Furthermore, a liquid source flow meter is provided on the first section of the pipeline.

[0011] Furthermore, a liquid source vaporizer is provided on the first section of the pipeline, and the liquid source vaporizer is arranged downstream of the liquid source flowmeter.

[0012] Furthermore, the pressure control device is arranged downstream of the liquid source flow meter in the first section of the pipeline.

[0013] Furthermore, the first section of the pipeline is provided with a first gas valve for controlling the on-off of the first section of the pipeline; and / or,

[0014] The second section of the pipeline is provided with a second gas valve for controlling the on-off of the second section of the pipeline; and / or,

[0015] The branch pipeline is provided with a third gas valve for controlling the on-off of the branch pipeline.

[0016] In a second aspect, the present invention further provides a thin film deposition device, comprising the above-mentioned gas path flow stabilization device for thin film deposition.

[0017] The present invention provides a gas path flow stabilization device for thin film deposition and thin film deposition equipment. The gas path flow stabilization device for thin film deposition comprises: a reaction chamber, a precursor pipeline, a front-stage pipeline and a branch pipeline. The precursor pipeline is connected to the reaction chamber, and the precursor pipeline is connected to the front-stage pipeline through the branch pipeline. The connection node between the branch pipeline and the precursor pipeline divides the precursor pipeline into a first section of the pipeline away from the reaction chamber and a second section of the pipeline close to the reaction chamber. The pressure on the reaction chamber side is high, and the pressure on the branch pipeline is low, and there is a pressure difference between the two. By arranging a pressure control device on the branch pipeline and / or the first section of the pipeline, the pressure on the branch pipeline is made consistent with the pressure in the reaction chamber by using the pressure control device, thereby eliminating the pressure difference, avoiding flow fluctuations during gas switching, and improving the quality and effect of thin film deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0019] Figure 1 A schematic diagram showing a gas path flow stabilization device for thin film deposition according to an embodiment of the present invention is shown;

[0020] Figure 2 A schematic diagram of a gas path flow stabilization device for thin film deposition according to another embodiment of the present invention is shown;

[0021] Figure 3 A schematic diagram showing a gas path flow stabilization device for thin film deposition according to another embodiment of the present invention is shown;

[0022] Figure 4 A schematic diagram showing a gas path flow stabilization device for thin film deposition according to another embodiment of the present invention is shown;

[0023] Figure 5 The flow curve diagram of the gas path flow stabilization device for thin film deposition before and after adjustment according to the embodiment of the present invention is shown;

[0024] Reference numerals:

[0025] 1. Reaction chamber; 2. Precursor pipeline; 21. First section pipeline; 211. Liquid source flow meter; 212. Liquid source vaporizer; 213. First gas valve; 22. Second section pipeline; 221. Second gas valve; 3. Foreline; 4. Branch pipeline; 41. Third gas valve; 51. Needle valve; 52. Flow limiter; 53. Pressure controller; DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but are not used to limit the present invention. In addition, in the drawings, structures with similar or identical structures are represented by the same reference numerals.

[0028] In the TEOS process, a special operating procedure is usually adopted to ensure the stability and accuracy of the TEOS flow during the deposition process. At the beginning of the TEOS gas flow, it is first introduced into the fore line, which is the pipeline leading to the pump, in order to first allow the TEOS gas flow to reach a stable state. After the flow stabilizes, it is switched to the chamber, that is, the reaction chamber. However, due to the difference in pressure between the fore line and the chamber, the pressure on the chamber side is high and the pressure on the foreline side is low. When the flow direction is switched, the pressure of the MV (TEOS liquid source vaporizer) outlet pipeline will change suddenly. This pressure change will cause the flow of the LFM (liquid source flowmeter) to fluctuate, thereby affecting the stability of the entire process and product quality.

[0029] To this end, the embodiment of the present invention solves the problem of flow fluctuation caused by sudden pressure change when the existing gas flow direction is switched by providing a gas path flow stabilization device and a thin film deposition equipment for thin film deposition. The pressure difference between the reaction chamber side and the front-stage pipeline side is eliminated through the pressure control device, thereby avoiding flow fluctuation during gas switching.

[0030] The embodiment of the present invention solves the above-mentioned problem of traffic fluctuation, and the specific solution is:

[0031] There is a difference in pressure between the fore line and the chamber, with the pressure on the chamber side being high and the pressure on the fore line side being low, so there is a pressure difference between the two. Then, when the TEOS gas switches from the flow direction, that is, switches from the fore line side to the chamber side, a pressure mutation will occur due to the pressure difference, which will cause the gas flow to fluctuate. Therefore, one solution is to eliminate the pressure difference. For this purpose, a pressure control device is provided in this embodiment. The pressure control device can be provided on the foreline side. The pressure on the fore line side is adjusted by the pressure control device so that the pressure on the fore line side and the chamber side remain consistent, thereby eliminating the pressure difference. In this way, when the gas switches from the fore line side to the chamber side, the pressure will not mutate, and the gas flow will not fluctuate, thereby stabilizing the gas flow. Another solution is to directly stabilize the TEOS gas path to ensure the stability of its flow, so that the gas flow will not fluctuate even when the gas flow direction is switched.

[0032] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0033] See also Figure 1-Figure 4 An embodiment of the present invention shows a gas path flow stabilization device for thin film deposition, comprising: a reaction chamber 1, a precursor pipeline 2, a front-stage pipeline 3 and a branch pipeline 4, wherein the precursor pipeline 2 is connected to the reaction chamber 1, and the front-stage pipeline 3 is connected to the precursor pipeline 2 through the branch pipeline 4, and the connection node between the branch pipeline 4 and the precursor pipeline 2 divides the precursor pipeline 2 into a first section pipeline 21 away from the reaction chamber 1 and a second section pipeline 22 close to the reaction chamber 1; wherein a pressure control device is provided on the branch pipeline 4 and / or the first section pipeline 21, and the pressure control device is configured to make the pressure on the branch pipeline 4 consistent with the pressure of the reaction chamber 1.

[0034] Specifically, the foreline 3 is the fore line, and the foreline 3 includes a vacuum pump, and the precursor line 2 is connected to the vacuum pump through a branch line 4. The precursor line 2 is also the main line, which is used to transport the precursor to the reaction chamber 1. The precursor is, for example, TEOS or tetraethoxysilane. The precursor line 2 is connected to the foreline 3 through a branch line 4, which is a pipeline for introducing TEOS gas into the fore line, first allowing the TEOS gas flow to reach a stable state, and then switching to the precursor line 2 to be fed to the reaction chamber 1. One end of the branch line 4 is connected to the precursor line 2, and the other end of the branch line 4 is connected to the vacuum pump in the foreline 3. The connection node between the branch line 4 and the precursor line 2 divides the precursor line 2 into two sections, namely, the first section 21 and the second section 22. The first section 21 is located in the upstream section of the precursor line 2, away from the reaction chamber 1. The second section of the pipeline 22 is located at the downstream end of the precursor pipeline 2 and is connected to the reaction chamber 1. The TEOS gas is first introduced into the fore line pipeline through the first section of the pipeline 21 through the branch pipeline 4 to stabilize the gas flow. After the gas flow is stable, it is switched to the second section of the pipeline 22, and the TEOS gas enters the reaction chamber 1 through the second section of the pipeline 22. Since the second section of the pipeline 22 is connected to the reaction chamber 1, the pressure of the second section of the pipeline 22 is consistent with the pressure on the side of the reaction chamber 1. The branch pipeline 4 is connected to the vacuum pump of the foreline pipeline 3, so the pressure of the branch pipeline 4 is consistent with the pressure on the side of the foreline pipeline 3 or the vacuum pump. Due to the negative pressure of the vacuum pump, the pressure of the vacuum pump will be lower than the pressure on the side of the reaction chamber 1. For example, the pump pressure is 0.02Torr and the chamber pressure is about 2.1Torr. Therefore, there will be a pressure difference between the side of the foreline pipeline 3 and the side of the reaction chamber 1. The pressure of the branch pipeline 4 is low and the pressure of the reaction chamber 1 is high. In order to eliminate the pressure difference, in this embodiment, a pressure control device can be set on the branch pipeline 4. The pressure control device is used to adjust the pressure of the branch pipeline 4 so that the pressure of the branch pipeline 4 is consistent with the pressure of the reaction chamber 1, thereby eliminating the pressure difference and avoiding gas flow fluctuations.

[0035] In another embodiment, a pressure control device may be provided on the first section of the pipeline 21, and the pressure control device is used to directly adjust the pressure of the first section of the pipeline 21, thereby stabilizing the flow of the precursor pipeline 2. Since the precursor pipeline 2 is stabilized by the pressure control device, there will be no sudden pressure change even when the gas flow direction is switched, and thus no flow fluctuation will occur, thereby maintaining a stable gas flow.

[0036] Of course, it is understandable that pressure control devices can also be provided on both the branch pipeline 4 and the first section pipeline 21, and the pressure difference between the chamber and the pump can be balanced by two pressure control devices. Those skilled in the art can select the location of the pressure control device according to actual needs.

[0037] Through this embodiment, by setting a pressure control device on the branch pipeline 4, the pressure of the branch pipeline 4 is adjusted, the pressure difference on both sides is reduced, the pressure fluctuation when the flow direction is switched is reduced, and the flow fluctuation when the flow direction is switched is eliminated; and by setting a pressure control device on the first section of the pipeline 21, when the flow direction is switched, the pressure of the entire section of the precursor pipeline 2, that is, the main pipeline pressure, is directly stabilized by the pressure control device, so that the flow remains stable, and the flow fluctuation when the flow direction is switched can also be eliminated.

[0038] In one embodiment, a liquid source flow meter 211 is provided on the first section of the pipeline 21. Specifically, the liquid source flow meter 211 (Liquid Flow Meter, LFM) is a precision instrument specially used to measure and control the flow of a liquid source (such as TEOS, TMAH, etc.). The flow of the liquid source on the first section of the pipeline 21 can be detected by the liquid source flow meter 211.

[0039] In this embodiment, a liquid source vaporizer 212 is provided on the first section of the pipeline 21, and the liquid source vaporizer 212 is provided downstream of the liquid source flowmeter 211. Specifically, the liquid source vaporizer 212 (MV) is a device that converts a liquid precursor (such as TEOS, TMAH, etc.) into a gaseous state to facilitate subsequent gas transmission and reaction processes. In this embodiment, the liquid source vaporizer 212 is used to heat the liquid precursor TEOS and convert it into a gaseous state to ensure that the gasified gas has a stable flow rate and pressure.

[0040] Reference Figure 1In one embodiment, the pressure control device is a needle valve 51, and there is a pressure difference between the branch pipeline 4 and the reaction chamber 1, and the opening of the needle valve 51 is configured to match the pressure difference. Specifically, the pressure control device is a needle valve 51, also known as a needle valve, which is a fine-tuning valve mainly used to accurately adjust the gas flow rate. Therefore, the needle valve 51 is a valve with high-precision adjustment ability, which is characterized in that the valve plug is needle-shaped and can move along the direction of the gas flow to cut off or adjust the flow by changing the flow cross-sectional area. The needle valve 51 is mainly composed of a valve body, a valve stem, a needle valve core and a handwheel (or an actuator). There is an elongated channel inside the valve body, and the needle valve core is located in the channel. The position of the valve core can be adjusted by rotating the handwheel or the actuator, thereby changing the opening of the fluid channel. When the handwheel is rotated, the valve stem connected to the handwheel drives the needle valve core to move up and down. The gap between the valve core and the channel determines the speed and flow rate of the fluid passing through the valve. Since the design of the needle valve core can adjust this gap very finely, the needle valve 51 can achieve highly accurate control of the fluid flow. The needle valve 51 is set on the branch pipeline 4 to adjust the pressure of the branch pipeline 4. The opening of the needle valve 51 needs to match the pressure difference (with the pressure difference between the branch pipeline 4 and the reaction chamber 1), so that the pressure difference can be eliminated, thereby avoiding sudden pressure changes and preventing flow fluctuations when the flow direction is switched.

[0041] For example, assuming the branch line pressure P1, the second section line pressure P2, the fluid density ρ, the fluid flow rate Q, the maximum opening of the needle valve h max =100%, the maximum flow coefficient of the needle valve C v，max =10. First determine the pressure difference, ΔP = P 1 -P 2 ; Then use the flow coefficient formula to calculate the flow coefficient C v :

[0042]

[0043] The opening h of the needle valve is usually related to the flow coefficient C v Assume that the maximum opening of the needle valve is h max , the corresponding flow coefficient is C v，max , then the opening h of the needle valve can be expressed as:

[0044]

[0045] It should be noted that the opening of the needle valve may also be calculated in other ways. In practical applications, further adjustment and verification may be required to ensure accurate matching of flow rate and pressure difference, which is not limited here.

[0046] Reference Figure 2In one embodiment, the pressure control device is a flow restrictor 52 (orifice), the flow restrictor 52 has an opening, there is a pressure difference between the branch pipeline 4 and the reaction chamber 1, and the caliber of the opening is configured to match the pressure difference. Specifically, the basic principle of the flow restrictor 52 is to control the flow rate by limiting the channel size of the fluid. By adjusting the channel size or shape of the flow restrictor 52, the flow rate and pressure of the fluid can be accurately controlled. In this embodiment, the flow restrictor 52 can be a fixed flow restrictor 52, and the fixed flow restrictor 52 has a fixed channel size, which is suitable for occasions where the flow rate and pressure are relatively stable. The flow restrictor 52 can also be an adjustable flow restrictor 52, and the channel size of the adjustable flow restrictor 52 is adjustable. The opening of the flow restrictor 52 is adjusted manually or electrically to change the flow rate and pressure. The flow restrictor 52 of this embodiment has a fixed opening caliber. The structure of the restrictor 52 can be various, such as a porous plate, a stepped orifice plate, etc. The restrictor 52 is arranged on the branch pipeline 4. When the gas passes through, the flow rate and pressure of the gas will change due to the limitation of the opening diameter, thereby realizing the pressure control function. Specifically, the restrictor 52 is arranged on the branch pipeline 4 to adjust the pressure of the branch pipeline 4. The diameter of the restrictor 52 needs to match the pressure difference (the pressure difference between the branch pipeline 4 and the reaction chamber 1), so that the pressure difference can be eliminated, thereby avoiding sudden pressure changes and preventing flow fluctuations when the flow direction is switched.

[0047] For example, assuming the branch line pressure P1, the second section line pressure P2, the fluid density ρ, the fluid flow rate Q, first determine the pressure difference, ΔP = P 1 -P 2 ; According to Bernoulli's equation and continuity equation:

[0048]

[0049] Among them, A1 and A2 are the cross-sectional areas of the inlet and outlet respectively, and v1 and v2 are the velocities of the inlet and outlet respectively. According to the above formula, A2 can be calculated. A2 is the cross-sectional area of ​​the outlet, that is, the area of ​​the restrictor opening. Assuming that the shape of the opening is circular, the diameter d of the opening can be calculated:

[0050]

[0051] It should be noted that the caliber of the opening of the flow restrictor may also be calculated in other ways. In practical applications, further adjustment and verification may be required to ensure an accurate match between the flow rate and the pressure difference, which is not limited here.

[0052] Reference Figure 3In one embodiment, the pressure control device is a pressure controller 53 for automatically adjusting the pressure of the branch pipeline 4, and the pressure controller 53 is configured so that its target pressure value matches the pressure of the reaction chamber 1. Specifically, the pressure control device is a pressure controller 53MFM, and the pressure controller 53 is arranged on the branch pipeline 4, which can automatically adjust the pressure of the branch pipeline 4. The pressure controller 53 sets the target pressure value, and it will automatically adjust the pressure of the branch pipeline 4 according to different flow rates. Specifically, the pressure controller 53 is arranged on the branch pipeline 4 to adjust the size of the pressure of the branch pipeline 4. The target pressure value set by the pressure controller 53 is also the pressure value of the reaction chamber 1, so that the pressure of the branch pipeline 4 can be adjusted to be consistent with the pressure of the reaction chamber 1, so that the pressure difference can be eliminated, thereby avoiding flow fluctuations when the flow direction is switched.

[0053] Reference Figure 4 In one embodiment, the pressure control device is a pressure controller 53 for automatically adjusting the pressure of the first section of the pipeline 21, and the pressure controller 53 is configured so that its target pressure value matches the pressure of the reaction chamber 1. Specifically, the pressure control device is a pressure controller 53MFM, which is arranged on the first section of the pipeline 21 and can automatically adjust the pressure of the first section of the pipeline 21. The target pressure value of the pressure controller 53 is set to be consistent with the pressure of the reaction chamber 1, and there is no need to consider the pressure difference between the pump and the chamber. The TEOS gas is first introduced into the pipeline of the fore line through the branch pipeline 4 through the first section of the pipeline 21 to stabilize the gas flow. After the gas flow is stable, it is switched to the second section of the pipeline 22, and the TEOS gas enters the reaction chamber 1 through the second section of the pipeline 22. Since the pressure control device has adjusted the pressure in the first section of the pipeline 21 to match the pressure of the reaction chamber 1, when the gas flow is switched to the second section of the pipeline 22, the pressure of the gas is consistent with the pressure of the reaction chamber 1, so no flow fluctuation will occur.

[0054] In this embodiment, the pressure control device is arranged downstream of the liquid source flow meter 211 in the first section of the pipeline 21. Specifically, the pressure controller 53 is installed on the first section of the pipeline 21 and downstream of the liquid source flow meter 211, that is, at the outlet end of the liquid source flow meter 211. The pressure controller 53 can automatically control its inlet pressure, that is, the pressure of the flow meter outlet pipeline. Even if the gas flow direction is switched, it will not affect the flow meter outlet pressure, thereby maintaining the stability of the flow rate.

[0055] In one embodiment, the first section pipeline 21 is provided with a first gas valve 213 for controlling the on-off of the first section pipeline 21. Specifically, the first gas valve 213 serves as an on-off gas valve of the first section pipeline 21, and is opened during deposition so that the precursor can enter the reaction chamber 1 through the precursor pipeline 2.

[0056] In one embodiment, the second section pipeline 22 is provided with a second gas valve 221 for controlling the on-off of the second section pipeline 22. Specifically, the second gas valve 221 serves as a channel gas valve of the second section pipeline 22, and is closed when the TEOS gas first passes through the first section pipeline 21 and is introduced into the pipeline of the fore line through the branch pipeline 4 to stabilize the gas flow, and is opened again when the gas flow direction is switched, and the TEOS gas then passes through the second section pipeline 22 and enters the reaction chamber 1.

[0057] In one embodiment, the branch pipeline 4 is provided with a third gas valve 41 for controlling the on-off of the branch pipeline 4. Specifically, the third gas valve 41 serves as a channel gas valve of the branch pipeline 4, and is opened when the TEOS gas is first introduced into the pipeline of the fore line through the first section pipeline 21 through the branch pipeline 4 to stabilize the gas flow, and is closed again when the gas flow direction is switched, and the TEOS gas then enters the reaction chamber 1 through the second section pipeline 22.

[0058] In summary, through the embodiments of the present invention, a pressure control device is provided on the branch pipeline 4 to adjust the pressure of the branch pipeline 4 and the reaction chamber 1, reduce the pressure difference on both sides, reduce the pressure fluctuation when the flow direction is switched, and eliminate the flow fluctuation when the flow direction is switched; or a pressure control device is provided on the first section of the pipeline 21, and when the flow direction is switched, the pressure of the main pipeline is stabilized by the pressure control device, which can also eliminate the flow fluctuation when the flow direction is switched.

[0059] The embodiment of the present invention further provides a thin film deposition device, comprising the gas path flow stabilizing device for thin film deposition of the above embodiment. Specifically, the gas path flow stabilizing device for thin film deposition has been described in detail in the above embodiment, and for the sake of brevity of the description, it will not be repeated here.

[0060] Through this embodiment, Figure 5 As shown, after adopting the gas path flow stabilization device of this embodiment, the gas flow rate no longer fluctuates when the flow direction is switched, and the gas flow curve is improved from the original sharp protrusion to a smooth switch, thereby ensuring the stability of the flow rate and improving the quality of thin film deposition.

[0061] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A gas path flow stabilization device for thin film deposition, characterized in that: include: A reaction chamber, a precursor pipeline, a front-stage pipeline and a branch pipeline, wherein the precursor pipeline is connected to the reaction chamber, the front-stage pipeline is connected to the precursor pipeline through the branch pipeline, and a connection node between the branch pipeline and the precursor pipeline divides the precursor pipeline into a first section of the pipeline away from the reaction chamber and a second section of the pipeline close to the reaction chamber; Wherein, a pressure control device is provided on the branch pipeline and / or the first section pipeline, and the pressure control device is configured to make the pressure on the branch pipeline consistent with the pressure of the reaction chamber.

2. The gas path flow stabilizing device according to claim 1, characterized in that: The pressure control device is a needle valve. There is a pressure difference between the branch pipeline and the reaction chamber. The opening of the needle valve is configured to match the pressure difference.

3. The gas path flow stabilizing device according to claim 1, characterized in that: The pressure control device is a flow restrictor, the flow restrictor has an opening, there is a pressure difference between the branch pipeline and the reaction chamber, and the caliber of the opening is configured to match the pressure difference.

4. The gas path flow stabilizing device according to claim 1, characterized in that: The pressure control device is a pressure controller for automatically adjusting the pressure of the branch pipeline, and the pressure controller is configured so that its target pressure value matches the pressure of the reaction chamber.

5. The gas path flow stabilizing device according to claim 1, characterized in that: The pressure control device is a pressure controller for automatically adjusting the pressure of the first section of the pipeline, and the pressure controller is configured so that its target pressure value matches the pressure of the reaction chamber.

6. The gas path flow stabilizing device according to any one of claims 1 to 4, characterized in that: A liquid source flow meter is provided on the first section of the pipeline.

7. The gas path flow stabilizing device according to claim 6, characterized in that: A liquid source vaporizer is provided on the first section of the pipeline, and the liquid source vaporizer is arranged downstream of the liquid source flow meter.

8. The gas path flow stabilizing device according to claim 6, characterized in that: The pressure control device is arranged downstream of the liquid source flow meter in the first section of the pipeline.

9. The gas path flow stabilizing device according to claim 1, characterized in that: The first section of the pipeline is provided with a first gas valve for controlling the on-off of the first section of the pipeline; and / or, The second section of the pipeline is provided with a second gas valve for controlling the on-off of the second section of the pipeline; and / or, The branch pipeline is provided with a third gas valve for controlling the on-off of the branch pipeline.

10. A thin film deposition device, characterized in that: It comprises a gas path flow stabilizing device for thin film deposition as described in any one of claims 1 to 9.

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