Passive wireless coupling water photoelectrolysis hydrogen production system and manufacturing method thereof

Abstract

The invention discloses a passive wireless coupling system for producing hydrogen by photoelectrolysis of water. The system comprises a transmitting device, a receiving device and an electrolysis device, the transmitting device comprises a commercial solar cell used for providing electric energy; the receiving device comprises a rectification antenna which is composed of a rectifier and an antenna, the rectifier is a Schottky diode, namely a micro-nano processed Si-based GaN device, and the antenna is prepared from a PCB and ceramic; the electrolysis device comprises an electrolytic bath, a photoelectric cathode, an anode and electrolyte; wherein the photoelectric cathode adopts p-Si as a substrate, the back electrode is a magnetron sputtering Al layer, the front surface is a uniformly distributed micron column array, and the surface is loaded with a MoS2 co-catalyst layer. The photoelectric cathode and the wireless energy transmission system are coupled and built, a traditional power supply is replaced by a wireless power supply mode, solar energy is converted into hydrogen energy at the front end, long-distance production of novel energy is achieved, and therefore the application prospect of the novel hydrogen energy is widened.

Description

Technical Field

[0001] The present invention relates to the field of photoelectrochemistry and microelectronics technology, and in particular to a passive wireless coupling photoelectrochemical water splitting hydrogen production system and a manufacturing method thereof. Background Art

[0002] In view of the increasingly serious energy crisis, the development of new energy sources is a key area. The production of hydrogen through photoelectrochemical water splitting has attracted widespread attention because it can effectively convert solar energy into green hydrogen energy. Among them, the performance of the photocathode, which is the direct hydrogen production end, directly determines the working effect of the entire system, and the selection of photocathode materials and structures is crucial. Secondly, the production of hydrogen through photoelectrochemical water splitting usually also requires the assistance of an external power supply. The introduction of an external power supply requires the introduction of wires for long-distance hydrogen production, which will undoubtedly increase more energy consumption. Therefore, it is also important to develop a new water splitting system to reduce circuit losses. Summary of the invention

[0003] In view of the above problems existing in the prior art, the present invention provides a passive wireless coupled photoelectric water splitting hydrogen production system and a manufacturing method thereof.

[0004] The technical solution of the present invention is as follows:

[0005] The first object of the present invention is to provide a passive wireless coupled photoelectric water electrolysis hydrogen production system, comprising a transmitting device, a receiving device and an electrolysis device;

[0006] The microwave wireless energy transmitting device includes a solar cell for providing electrical energy and converting transmittable microwave wireless energy;

[0007] The microwave wireless energy receiving device includes a rectifying antenna, which receives microwave wireless energy and converts it into electrical energy;

[0008] The electrolysis device comprises an electrolytic cell, a photocathode, an anode and an electrolyte;

[0009] The transmitting device is contactlessly connected to the receiving device;

[0010] The receiving device is electrically connected to the two electrodes of the electrolysis device.

[0011] In one embodiment of the present invention, the microwave wireless energy transmitting device further includes a voltage-controlled oscillator, a power amplifier and a transmitting antenna;

[0012] The solar cell provides electrical energy, generates a 915MHz radio frequency signal through a voltage-controlled oscillator (VCO), and realizes microwave wireless energy transmission through a power amplifier and a transmitting antenna.

[0013] In one embodiment of the present invention, the microwave wireless energy receiving device further includes a power management module to stabilize the output voltage.

[0014] In one embodiment of the present invention, the rectifying antenna, which is composed of a rectifier and an antenna, receives a 915MHz radio frequency signal, converts it into direct current energy, and then stabilizes the output voltage to 3.3V through a power management module.

[0015] In one embodiment of the present invention, the photocathode is a micron-column vertical array structure prepared by photolithography-etching, with a diameter of 10-20 um, a depth of 60-80 um, and a column spacing of 20 um.

[0016] In one embodiment of the present invention, a MoS2 layer is deposited on the surface of the micro-rod array.

[0017] The MoS2 layer was prepared by electrochemical deposition.

[0018] In one embodiment of the invention, the layer thickness of the MoS2 layer is 1-2 um.

[0019] In one embodiment of the present invention, the photocathode is a multilayer structure, the bottom layer is a p-Si substrate electrode, the morphology is a uniformly distributed micron column structure array, and the upper layer is covered with a MoS2 catalytic promoter layer with a thickness of 1-2um.

[0020] In one embodiment of the present invention, the specific structure of the photocathode is: an aluminum back electrode ohmic contact layer stacked from bottom to top, a p-type single crystal silicon (p-Si) substrate light absorption layer processed by micro-nano processing, and a surface modified MoS2 catalyst layer.

[0021] The thickness of the Al back electrode is 300 nm.

[0022] Preferably, the p-Si material has a crystal orientation of (100), a resistivity of less than 10Ω·cm, and a thickness of 500-625um.

[0023] In one embodiment of the present invention, light absorption is enhanced by introducing micro-nano structures, and a photoelectrode array with high reproducibility and good uniformity is prepared by a photolithography-etching scheme, which is different from the common chemical method for preparing the array structure.

[0024] The preparation method of the photocathode is as follows:

[0025] S1. The p-Si substrate was ultrasonically cleaned with acetone, isopropanol, and water in sequence, and dried with nitrogen for later use.

[0026] S2. Spin-coat AZ4210 photoresist on the front side of p-Si, bake on a hot plate at 100°C, transfer to a photolithography machine for exposure, and transfer the pattern of the array photolithography plate.

[0027] S3. After photolithography and development, the silicon wafer is transferred to an etcher and deep silicon etching is performed using etching gas SF6 and passivation gas C4F8 to prepare a vertical micron column array. The etching time is controlled to obtain an etching depth of 60-80um, and then the wafer is transferred to a stripping solution to ultrasonically strip the residual photoresist.

[0028] S4. The processed wafer is transferred to a magnetron sputtering station for coating to form an ohmic contact, and the deposition thickness of the Al film is controlled to be 300 nm.

[0029] S5. The prepared electrode sheet is placed in a 1 mM ammonium tetrathiomolybdate solution through a three-electrode system, the deposition voltage is controlled to be -0.8 V, the deposition time is 2 min, and the MoS2 co-catalyst layer is loaded by electrodeposition.

[0030] In one embodiment of the present invention, the anode is a Pt electrode with an area of ​​1×1 cm 2 .

[0031] In one embodiment of the present invention, the electrolyte composition is 0.5M H2SO4.

[0032] The second object of the present invention is to provide a method for preparing the above-mentioned passive wireless coupled photoelectric water splitting hydrogen production system, comprising the following steps:

[0033] (1) Preparation of the photocathode: The p-Si back electrode was prepared by magnetron sputtering Al, and a micron column array structure was introduced on the surface of the silicon electrode by photolithography-etching to enhance light absorption, and a MoS2 catalyst layer was further loaded by electrodeposition;

[0034] (2) Preparation of microwave wireless energy transmission system DAW: including a transmitting device and a receiving device, connecting the transmitting device and the receiving device contactlessly; and electrically connecting the receiving device and two electrodes of the electrolysis device.

[0035] In one embodiment of the present invention, a specific preparation scheme of a microwave wireless energy receiving device comprises the following steps:

[0036] (I) Design and fabrication of GaN Schottky diodes on Si

[0037] 1. Material preparation: Select high-purity Si substrates and gallium nitride (GaN) thin film materials to ensure that the materials meet the high quality requirements of electronic devices.

[0038] 2. Substrate processing: Clean and polish the Si substrate to ensure surface flatness. Then perform nitridation to form a silicon nitride layer as a buffer layer for the GaN epitaxial layer.

[0039] 3. Epitaxial growth: GaN epitaxial layer is grown on Si substrate by metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) technology, and the thickness of epitaxial layer is between 300-600nm. After epitaxy, n-type doping is performed with a doping concentration of 2e 17 -4e 17 cm 3 .

[0040] 4. Preparation of GaN Schottky diode:

[0041] Inductively coupled plasma (ICP) was used to etch out the mesa (400 nm) where the anode was located in a SiCl4 environment.

[0042] The metal stack of Ti / Al / Ni / Au was deposited by magnetron sputtering as the ohmic electrode, and after the standard stripping process, it was annealed at 850°C for 60s in a nitrogen environment.

[0043] Using ICP, deep trenches are etched to Si in a SiCl4 environment to achieve isolation between devices. Next, TiN / Au is deposited as a Schottky anode and electroplating seed layer. The anode area is 150-300 square microns and is a circular pattern. The device electrode area is 90,000 square microns and is a square pattern.

[0044] After electroplating the air bridge and device electrode metal, the standard stripping process is followed by annealing at 400°C for 600s in a nitrogen environment to complete the production of silicon-based gallium nitride Schottky diodes. After the device is manufactured, it is laser cut into independent devices for microwave rectification circuit production.

[0045] Performance test: Conduct electrical performance test on the manufactured Schottky diode to verify whether the parameters such as turn-on voltage, junction capacitance, series resistance and breakdown voltage meet the design requirements. The turn-on voltage of the diode is about 0.3V, the junction capacitance is about 0.4pF, and the reverse breakdown voltage is above 20V.

[0046] (II) Design and implementation of microwave rectifier

[0047] 1. Circuit design:

[0048] Use simulation software (such as ADS or CST) to simulate the circuit of the rectifier at an operating frequency of 915 MHz, substitute the tested device into the circuit, and optimize the matching network parameters.

[0049] According to the simulation results, appropriate lumped components (such as inductors and capacitors) are selected to achieve circuit matching, and lumped components use RF capacitors and inductors.

[0050] 2. Rectifier preparation:

[0051] Convert the designed circuit diagram into PCB layout and make the PCB board.

[0052] Install Si-based GaN Schottky diodes and lumped components on the PCB board and complete soldering.

[0053] 3. Performance test:

[0054] The rectification efficiency of the rectifier is tested in the power range of 0dBm-15dBm to ensure that the RF-DC rectification efficiency exceeds 50%.

[0055] (III) Antenna design and production:

[0056] 1. Antenna design

[0057] Use electromagnetic simulation software (such as CST Microwave Studio) to design a receiving antenna for 915MHz frequency. Optimize the antenna shape and size based on the required gain (0-1dBi) and half-power angle (>50°). Make sure the antenna size meets the 35mm x 35mm limit.

[0058] Select FR4 PCB material or ceramic material suitable for high-frequency applications, and ensure that the dielectric constant and loss tangent values ​​are suitable for the operating frequency of 915MHz.

[0059] Design the back-feed structure to ensure the matching of the feeding point and the antenna.

[0060] 2. Antenna production

[0061] Convert the designed antenna pattern to PCB layout. Make sure the impedance of the connection between the feed line and the antenna is matched.

[0062] Send the PCB design file to the manufacturer for proofing. Using ceramic materials, special processing is required to form the antenna pattern.

[0063] Use a network analyzer to test the antenna's S parameters to verify whether the actual performance is consistent with the design. If the performance does not meet the requirements, adjust the antenna design based on the test results.

[0064] 3. Connect the rectifier output to the DC-DC converter

[0065] The TPS63802 DC-DC converter was chosen because it is able to provide a regulated output voltage suitable for the power range of 0-15dBm.

[0066] Connect the DC output of the rectifier to the input of the TPS63802.

[0067] Configure external components such as input / output capacitors, feedback resistors, etc. according to the TPS63802 data sheet to achieve a stable output voltage of 3.3 V. Add necessary protection components such as over-current protection, over-temperature protection, etc. to ensure the stability and reliability of the system.

[0068] The specific preparation scheme of the microwave wireless energy transmitting device includes the following steps:

[0069] (I) Integration of solar cells and power management chips

[0070] 1. Solar cell selection and installation:

[0071] Choose a high-efficiency solar panel suitable for your application, such as monocrystalline or polycrystalline solar cells.

[0072] Install the solar cell in a location with adequate sunlight and ensure that the panel faces the sun at the best angle.

[0073] 2. Selection and connection of power management chip:

[0074] According to the system voltage and current requirements, select a suitable power management chip, which should have the characteristics of high efficiency and low power consumption.

[0075] Connect the positive and negative poles of the solar cell to the input of the power management chip to ensure that the direct current (DC) output by the battery can be effectively managed.

[0076] 3. Power management circuit design:

[0077] Design circuits, including the necessary filtering, voltage regulation, and current regulation components, to ensure stable power for voltage-controlled oscillators and power amplifiers.

[0078] (II) Preparation of voltage-controlled oscillator and power amplifier

[0079] 1. Design and implementation of voltage controlled oscillator (VCO):

[0080] Design a voltage controlled oscillator circuit and select an appropriate crystal oscillator or LC oscillator structure to generate a 915MHz RF signal.

[0081] Use analog or digital circuit design software to perform circuit simulation and optimize circuit parameters to meet frequency stability and phase noise requirements.

[0082] The actual circuit was built and the oscillation frequency was adjusted to 915MHz using fine-tuning components.

[0083] 2. Design and implementation of power amplifier (PA):

[0084] Select the appropriate power amplifier transistor or module based on the required output power (5W-10W). Design the matching network of the power amplifier, including input and output matching circuits, to achieve maximum power transfer and minimum reflection.

[0085] In the actual circuit, the matching network is adjusted experimentally to ensure that the amplifier can provide the required output power at a frequency of 915MHz.

[0086] (III) Preparation and testing of transmitting antenna

[0087] 1. Antenna design:

[0088] Based on the operating frequency of 915MHz, design an antenna with a gain of more than 5dBi and a half-power angle of >120°. You can choose a patch antenna, a dipole antenna, or a helical antenna.

[0089] Use antenna design software to perform simulations and optimize antenna size and shape.

[0090] 2. Antenna production:

[0091] According to the design drawings, use PCB technology or hand-made antennas to ensure that the physical size and electrical performance of the antenna meet the design requirements.

[0092] Connect the output of the power amplifier to the input of the antenna through an appropriate transmission line to ensure impedance matching.

[0093] Antenna performance test:

[0094] Antenna performance test: Use a network analyzer to test the antenna's standing wave ratio (SWR) and gain to ensure that the antenna's performance at 915MHz meets the requirements.

[0095] Conduct actual transmission tests, measure the antenna's radiation pattern and RF power output, and verify whether the antenna gain and half-power angle meet the design standards. The transmission power should be more than five times the array power consumption, and the radiation range of the transmitting antenna should cover the array layout area.

[0096] The beneficial technical effects of the present invention are:

[0097] The present invention introduces micro-nano processing technology into the process of preparing the photocathode, and can prepare an electrode structure with better reproducibility and uniformity. The specific array structure parameters are a vertical array structure of micron columns, with a column diameter of 10-20um, a depth of 60-80um, and a column spacing of 20um. This is unattainable by most existing photoelectrodes prepared by chemical methods.

[0098] The present invention can realize long-distance application scenarios by matching a silicon-based photocathode with excellent performance and good process reproducibility in series with a wireless energy transmission system. In the case of long distances, there is no need to use wires in series with the power supply, and water decomposition and hydrogen production can be completed under light-assisted conditions. In addition, a "one-to-many" working mode can be achieved, and the synchronous operation of multiple receiving ends can be achieved with only one transmitting end. Compared with the traditional water decomposition system, the power supply end is replaced by a wireless energy receiving end, which can avoid the replacement cost due to power exhaustion.

[0099] The core component of the wireless energy transmission system of the present invention, the rectifier antenna, is a Schottky diode based on Si and GaN. Compared with the traditional silicon-based and gallium arsenide-based Schottky diodes, it can achieve a higher breakdown voltage while achieving a small turn-on voltage and junction capacitance, and can effectively ensure the power bandwidth of the rectifier. At the same time, the silicon-based substrate structure is conducive to the heterogeneous integration of the rectifier and the photocathode p-Si, and avoids the influence of interface mismatch. Based on the above advantages, we provide a new water splitting system. BRIEF DESCRIPTION OF THE DRAWINGS

[0100] Figure 1 This is a scanning electron microscope image of the interface of the photocathode of the present invention.

[0101] Figure 2 The current-voltage curve of the photocathode of the present invention in the water splitting hydrogen production system.

[0102] Figure 3 The efficiency curves of the rectifier device of the present invention at different powers (load 5100Ω).

[0103] Figure 4 The output voltage curve of the rectifying antenna of the present invention at different powers (load 5100Ω).

[0104] Figure 5 This is a schematic diagram of the overall passive wireless coupled photoelectric water splitting hydrogen production system in the present invention. DETAILED DESCRIPTION

[0105] The present invention is described in detail below in conjunction with the accompanying drawings and embodiments.

[0106] A passive wireless coupled photoelectric water splitting hydrogen production system, comprising a transmitting device, a receiving device and an electrolysis device;

[0107] The microwave wireless energy transmitting device includes a solar cell for providing electrical energy and converting transmittable microwave wireless energy;

[0108] The microwave wireless energy receiving device includes a rectifying antenna, which receives microwave wireless energy and converts it into electrical energy;

[0109] The electrolysis device comprises an electrolytic cell, a photocathode, an anode and an electrolyte;

[0110] The transmitting device is contactlessly connected to the receiving device;

[0111] The receiving device is electrically connected to the two electrodes of the electrolysis device.

[0112] Example 1

[0113] The photocathode uses p-Si semiconductor. In order to obtain a micro-nano array structure with uniform distribution and good reproducibility, a photolithography-etching micro-nano processing technology is used, and a MoS2 catalyst layer is further loaded to improve performance. The specific preparation steps are as follows:

[0114] (1) Cut the commercial p-Si wafer into small pieces of 1 cm*1 cm in size, and clean them with acetone, isopropanol, and water in sequence for later use.

[0115] (2) Coat 1 mL of AZ4210 photoresist on the front of p-Si, spin-coat evenly at 3000 rpm for 15 s, bake on a hot plate at 100 °C for 2 min, transfer to a photolithography machine for exposure, and perform pattern transfer with a 20 um circular hole array photomask. The exposure time is 20 s.

[0116] (3) After photolithography, transfer the wafer to the developer for 1 min for development.

[0117] (4) After development, the wafer is transferred to a dry etching furnace for deep silicon etching, and the gas flow ratio of SF6 and C4F8 is controlled to be 60:1, and the etching time is 10 minutes.

[0118] (5) The photolithography-etched wafer is transferred to a stripping solution to clean the remaining photoresist. The cleaned electrode is Figure 1 The obtained structure is a uniformly arranged micron column structure, wherein the diameter of the micron column is 20um, the depth is 80um, and the column spacing is 20um. Then, a MoS2 catalyst layer is further deposited on the surface of the micron column by electrochemical deposition, the deposition liquid is 1mM ammonium tetrathiomolybdate solution, the deposition voltage is -0.8V, and the deposition time is 2min.

[0119] (6) After the deposition, the electrode was transferred to a magnetron sputtering furnace to deposit Al as the back electrode. The deposition time was 5 min and the thickness of the Al layer was controlled to be 300 nm.

[0120] The above photocathode was tested for photoelectrochemical water splitting. The test results are shown in the figure below. Figure 2 As shown in Figure 2, the composite photoelectrode exhibits excellent photoelectric performance at 100 mW / cm 2 Under simulated sunlight, the saturation photocurrent reached -32mA, and the turn-on voltage also reached 0.4V.

[0121] Example 2

[0122] The core of the microwave wireless energy transmission system is the GaN-on-Si Schottky diode. The Schottky contact uses a TiN metal anode to achieve a diode turn-on voltage as low as 0.31V, which is used for small and medium power microwave wireless energy transmission. The production process of the GaN-on-Si Schottky diode is as follows:

[0123] (1) Using inductively coupled plasma (ICP), in a SiCl4 environment, the anode mesa (400 nm) was etched.

[0124] The metal stack of Ti / Al / Ni / Au was deposited by magnetron sputtering as the ohmic electrode, and after the standard stripping process, it was annealed at 850°C for 60s in a nitrogen environment.

[0125] (2) Using ICP, deep trenches are etched to Si in a SiCl4 environment to achieve isolation between devices. Next, TiN / Au is deposited as a Schottky anode and electroplating seed layer. The anode area is 150-300 square microns and is a circular pattern. The device electrode area is 90,000 square microns and is a square pattern.

[0126] (3) After electroplating the air bridge and the standard stripping process, the silicon-based GaN Schottky diode was fabricated by annealing at 400 °C for 600 s in a nitrogen environment.

[0127] The Schottky diodes are used for 915MHz microwave wireless energy collection. The matching circuit of the 915MHz microwave rectifier circuit is simulated and designed using simulation software. The matching is performed using lumped source devices such as inductors and capacitors. The rectifier circuit is implemented using a series structure or a parallel structure. According to the simulation results, a radio frequency low-loss PCB board is used to process and manufacture the actual rectifier circuit.

[0128] The performance test program of the rectifier circuit includes an RF signal source, a directional coupler, a power meter, and a multimeter. The RF signal source sends a 915MHz RF signal to the directional coupler. The coupling end of the directional coupler is connected to a power meter to monitor the input power. The output end of the directional coupler is connected to the rectifier circuit. The DC output voltage of the rectifier is monitored by a multimeter to calculate the output power (the square of the voltage divided by the load resistance of 5100Ω). The efficiency of the rectifier is calculated by dividing the output DC power by the input power monitored by the directional coupler. The efficiency and output DC voltage of the rectifier at different powers are as follows: Figure 3 and Figure 4 As shown in the figure, the proposed silicon-based gallium nitride rectifier circuit has a rectification efficiency of more than 70% in the range of 0-15dBm, which is at the leading level. The output voltage of the rectifier circuit at different powers exceeds 2V, which is enough to drive a commercial power management chip that works at 1.8V.

[0129] Example 3

[0130] A passive wireless coupled photoelectric water electrolysis hydrogen production system includes a transmitting device, a receiving device and an electrolysis device, such as Figure 5 As shown;

[0131] The microwave wireless energy transmitting device includes a solar cell, which is used to provide electrical energy and convert DC power into transmittable microwave wireless energy. At the same time, the position of the transmitting end can be adjusted to obtain the best solar energy reception. After the electrical energy of the solar cell is processed by the power management chip, it provides a stable DC working voltage to the voltage-controlled oscillator and the power amplifier. The voltage-controlled oscillator generates a 915MHz radio frequency signal under a DC voltage. After the radio frequency signal is amplified by the power amplifier, it is connected to the transmitting antenna to transmit microwave energy.

[0132] The microwave wireless energy receiving device includes a rectifying antenna, a Si-based gallium nitride microwave rectifier and a power management chip; the radio frequency energy is received through independent antennas, and the received radio frequency energy is converted into DC energy through the Si-based gallium nitride microwave rectifier connected to the rectifying antenna. The DC energy is processed by the power management chip to obtain a stable DC voltage of about 3V to power the back-end electrolysis device.

[0133] The embodiments provided above are not intended to limit the scope of the present invention, and the steps described are not intended to limit the execution order thereof. Those skilled in the art may make obvious improvements to the present invention in combination with existing common knowledge, which also fall within the scope of protection defined by the claims of the present invention.

Claims

1. A passive wireless coupled photoelectric water splitting hydrogen production system, characterized in that: It includes a transmitting device, a receiving device and an electrolysis device; The microwave wireless energy transmitting device includes a solar cell for providing electrical energy and converting transmittable microwave wireless energy; The microwave wireless energy receiving device includes a rectifying antenna, which receives microwave wireless energy and converts it into electrical energy; The electrolysis device comprises an electrolytic cell, a photocathode, an anode and an electrolyte; The transmitting device is contactlessly connected to the receiving device; The receiving device is electrically connected to the two electrodes of the electrolysis device.

2. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 1 is characterized in that: The microwave wireless energy transmitting device also includes a voltage-controlled oscillator, a power amplifier and a transmitting antenna; The solar cell provides electrical energy, generates a 915MHz radio frequency signal through a voltage-controlled oscillator, and realizes microwave wireless energy transmission through a power amplifier and a transmitting antenna.

3. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 1 is characterized in that: The microwave wireless energy receiving device also includes a power management module to stabilize the output voltage.

4. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 3 is characterized in that: The rectenna receives 915MHz RF signals, converts them into DC energy, and then stabilizes the output voltage to 3.3V through the power management module.

5. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 1, characterized in that: The photocathode is a micron column vertical array structure prepared by photolithography-etching, with a column diameter of 10-20um, a depth of 60-80um, and a column spacing of 20um.

6. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 5, characterized in that: A MoS2 layer with a thickness of 1-2 um is deposited on the surface of the micron column array.

7. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 5, characterized in that: The photocathode is a multi-layer structure, the bottom layer is a p-Si substrate electrode, the morphology is a uniformly distributed micron column structure array, and the upper layer is covered with a MoS2 catalytic promoter layer with a thickness of 1-2um.

8. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 1, characterized in that: The anode is a Pt electrode.

9. The passive wireless coupled photoelectric water splitting hydrogen production system according to claim 1, characterized in that: The electrolyte composition is 0.5M H2SO4 solution.

10. A method for preparing the passive wireless coupled photoelectric water splitting hydrogen production system according to claim 1, characterized in that: The steps include: (1) Preparation of the photocathode: The p-Si back electrode was prepared by magnetron sputtering Al, and a micron column array structure was introduced on the surface of the silicon electrode by photolithography-etching to enhance light absorption, and a MoS2 catalyst layer was further loaded by electrodeposition; (2) Preparation of microwave wireless energy transmission system DAW: including a transmitting device and a receiving device, connecting the transmitting device and the receiving device contactlessly; and electrically connecting the receiving device and two electrodes of the electrolysis device.

Images