Silicon carbide epitaxial growth equipment

Abstract

The invention provides silicon carbide epitaxial growth equipment. The silicon carbide epitaxial growth equipment comprises a cavity, a valve group, a pressure control assembly and a material transfer mechanism, a growth chamber, a transmission chamber, a substrate slice temporary storage chamber and an epitaxial wafer temporary storage chamber are arranged in the cavity. The valve group comprises a first switch valve arranged between the substrate slice temporary storage chamber and the transmission chamber, a second switch valve arranged between the growth chamber and the transmission chamber, and a third switch valve arranged between the epitaxial slice temporary storage chamber and the transmission chamber. The pressure control assembly comprises a first pressure controller used for controlling the pressure in the substrate temporary storage chamber and a second pressure controller used for controlling the pressure in the epitaxial wafer temporary storage chamber. The material transferring mechanism is arranged in the conveying mechanism. According to the silicon carbide epitaxial wafer growth equipment provided by the invention, only the pressure of the substrate slice temporary storage chamber and the pressure of the epitaxial wafer temporary storage chamber need to be adjusted when the substrate slice or the epitaxial wafer is transferred, so that the growth time is saved, and the cleanliness of the growth chamber can be better guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a silicon carbide epitaxial growth device. Background Art

[0002] Silicon carbide epitaxial growth generally needs to be carried out in a low-pressure environment (50-150mbar) in the growth chamber. After the growth is completed, the silicon carbide epitaxial wafer needs to be transferred out. Before transferring out, the pressure of the growth chamber needs to be restored to normal pressure. The pressure of the growth chamber needs to fluctuate back and forth between normal pressure and low pressure. The growth chamber environment is relatively complex and the cavity is large. The pressure needs to change slowly, which is time-consuming. In addition, by-products will be produced during the growth of silicon carbide and attached to the growth chamber. Frequent changes in pressure may cause the attachments to fall off and affect the chamber environment. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a silicon carbide epitaxial growth device, which aims to solve the problem that the pressure of the growth chamber for silicon carbide growth in the related art needs to be repeatedly switched between normal pressure and low pressure, which wastes time, and the frequent pressure changes may cause the attachments on the inner wall of the growth chamber to fall off and affect the chamber environment.

[0004] The present invention provides a silicon carbide epitaxial growth device, comprising:

[0005] A cavity, wherein a growth chamber, a transfer chamber, a substrate temporary storage chamber and an epitaxial wafer temporary storage chamber are arranged in the cavity, and the growth chamber, the substrate temporary storage chamber and the epitaxial wafer temporary storage chamber are all connected to the transfer chamber;

[0006] A valve group, comprising a first switch valve, a second switch valve and a third switch valve, wherein the first switch valve is arranged between the substrate temporary storage chamber and the transfer chamber, the second switch valve is arranged between the growth chamber and the transfer chamber, and the third switch valve is arranged between the epitaxial wafer temporary storage chamber and the transfer chamber;

[0007] A pressure control component, comprising a first pressure controller and a second pressure controller, wherein the first pressure controller is used to control the pressure in the substrate temporary storage chamber, and the second pressure controller is used to control the pressure in the epitaxial wafer temporary storage chamber;

[0008] A material transfer mechanism is arranged in the transmission chamber, and the mobile clamping end of the material transfer mechanism is used to move between the substrate sheet temporary storage chamber, the transmission chamber, the growth chamber and the epitaxial wafer temporary storage chamber.

[0009] According to the silicon carbide epitaxial growth equipment provided by the present invention, the first switch valve is a gate valve.

[0010] According to the silicon carbide epitaxial growth equipment provided by the present invention, the second switch valve is a gate valve.

[0011] According to the silicon carbide epitaxial growth equipment provided by the present invention, the third switch valve is a gate valve.

[0012] According to the silicon carbide epitaxial growth equipment provided by the present invention, the material transfer mechanism includes a robot.

[0013] According to the silicon carbide epitaxial growth equipment provided by the present invention, the pressure control range of the first pressure controller is at least 50 mbar to normal pressure.

[0014] According to the silicon carbide epitaxial growth equipment provided by the present invention, the pressure control range of the second pressure controller is at least 50 mbar to normal pressure.

[0015] The present invention adopts the above technical solution, which has the following advantages:

[0016] The silicon carbide epitaxial growth equipment provided by the present invention comprises a chamber, a valve group, a pressure control component and a material transfer mechanism. A growth chamber, a transmission chamber, a substrate sheet temporary storage chamber and an epitaxial wafer temporary storage chamber are arranged in the chamber, and the growth chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber are all connected to the transmission chamber. The valve group comprises a first switch valve, a second switch valve and a third switch valve, the first switch valve is arranged between the substrate sheet temporary storage chamber and the transmission chamber, the second switch valve is arranged between the growth chamber and the transmission chamber, and the third switch valve is arranged between the epitaxial wafer temporary storage chamber and the transmission chamber. The pressure control component comprises a first pressure controller and a second pressure controller, the first pressure controller is used to control the pressure in the substrate sheet temporary storage chamber, and the second pressure controller is used to control the pressure in the epitaxial wafer temporary storage chamber. The material transfer mechanism is arranged in the transmission chamber, and the movable clamping end of the material transfer mechanism can move between the substrate sheet temporary storage chamber, the transmission chamber, the growth chamber and the epitaxial wafer temporary storage chamber. Before the epitaxial growth of silicon carbide, first ensure that the first switch valve and the third switch valve remain in a closed state, and then adjust the pressure of the growth chamber and the transmission chamber to the production pressure. Then adjust the pressure of the substrate sheet temporary storage chamber to normal pressure through the first pressure controller, open the substrate sheet temporary storage chamber, and place the substrate sheet in the substrate sheet temporary storage chamber. Then adjust the pressure of the substrate sheet temporary storage chamber to the production pressure through the first pressure controller, open the first switch valve, and then transfer the substrate sheet in the substrate sheet temporary storage chamber to the transmission chamber through the material transfer mechanism, and close the first switch valve. Then open the second switch valve, and transfer the substrate sheet in the transmission chamber to the growth chamber through the material transfer mechanism, and close the second switch valve. After the growth is completed, open the second switch valve, and transfer the epitaxial wafer grown in the growth chamber to the transmission chamber through the material transfer mechanism. Then adjust the pressure in the epitaxial wafer temporary storage chamber to the production pressure through the second pressure controller, and then open the third switch valve, transfer the epitaxial wafer in the transmission chamber to the epitaxial wafer temporary storage chamber through the material transfer mechanism, and close the third switch valve. Then, the pressure in the epitaxial wafer temporary storage chamber is adjusted to normal pressure through the second pressure controller, and then the epitaxial wafer temporary storage chamber is opened to take out the epitaxial wafer. At this point, the growth of a silicon carbide epitaxial wafer is completed. In the silicon carbide growth process, the silicon carbide epitaxial wafer growth equipment provided by the present invention only needs to adjust the pressure of the substrate wafer temporary storage chamber and the epitaxial wafer temporary storage chamber. Since the space of the substrate wafer temporary storage chamber and the epitaxial wafer temporary storage chamber is small, the pressure can be adjusted quickly to save growth time. The growth chamber always maintains the production pressure, and no pressure adjustment is required, which can better ensure the cleanliness of the growth chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 It is a schematic structural diagram of a silicon carbide epitaxial growth device provided in one embodiment of the present invention.

[0019] Reference numerals:

[0020] 110: growth chamber; 120: transfer chamber; 130: substrate wafer temporary storage chamber; 140: epitaxial wafer temporary storage chamber; 210: first switch valve; 220: second switch valve; 230: third switch valve; 310: first pressure controller; 320: second pressure controller. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0024] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0025] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0026] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0027] The silicon carbide epitaxial growth equipment provided by the present invention comprises a chamber, a valve group, a pressure control component and a material transfer mechanism. A growth chamber, a transmission chamber, a substrate sheet temporary storage chamber and an epitaxial wafer temporary storage chamber are arranged in the chamber, and the growth chamber, the substrate sheet temporary storage chamber and the epitaxial wafer temporary storage chamber are all connected to the transmission chamber. The valve group comprises a first switch valve, a second switch valve and a third switch valve, the first switch valve is arranged between the substrate sheet temporary storage chamber and the transmission chamber, the second switch valve is arranged between the growth chamber and the transmission chamber, and the third switch valve is arranged between the epitaxial wafer temporary storage chamber and the transmission chamber. The pressure control component comprises a first pressure controller and a second pressure controller, the first pressure controller is used to control the pressure in the substrate sheet temporary storage chamber, and the second pressure controller is used to control the pressure in the epitaxial wafer temporary storage chamber. The material transfer mechanism is arranged in the transmission chamber, and the movable clamping end of the material transfer mechanism can move between the substrate sheet temporary storage chamber, the transmission chamber, the growth chamber and the epitaxial wafer temporary storage chamber. Before the epitaxial growth of silicon carbide, first ensure that the first switch valve and the third switch valve remain in a closed state, and then adjust the pressure of the growth chamber and the transmission chamber to the production pressure. Then adjust the pressure of the substrate sheet temporary storage chamber to normal pressure through the first pressure controller, open the substrate sheet temporary storage chamber, and place the substrate sheet in the substrate sheet temporary storage chamber. Then adjust the pressure of the substrate sheet temporary storage chamber to the production pressure through the first pressure controller, open the first switch valve, and then transfer the substrate sheet in the substrate sheet temporary storage chamber to the transmission chamber through the material transfer mechanism, and close the first switch valve. Then open the second switch valve, and transfer the substrate sheet in the transmission chamber to the growth chamber through the material transfer mechanism, and close the second switch valve. After the growth is completed, open the second switch valve, and transfer the epitaxial wafer grown in the growth chamber to the transmission chamber through the material transfer mechanism. Then adjust the pressure in the epitaxial wafer temporary storage chamber to the production pressure through the second pressure controller, and then open the third switch valve, transfer the epitaxial wafer in the transmission chamber to the epitaxial wafer temporary storage chamber through the material transfer mechanism, and close the third switch valve. Then, the pressure in the epitaxial wafer temporary storage chamber is adjusted to normal pressure through the second pressure controller, and then the epitaxial wafer temporary storage chamber is opened to take out the epitaxial wafer. At this point, the growth of a silicon carbide epitaxial wafer is completed. In the silicon carbide growth process, the silicon carbide epitaxial wafer growth equipment provided by the present invention only needs to adjust the pressure of the substrate wafer temporary storage chamber and the epitaxial wafer temporary storage chamber. Since the space of the substrate wafer temporary storage chamber and the epitaxial wafer temporary storage chamber is small, the pressure can be adjusted quickly to save growth time. The growth chamber always maintains the production pressure, and no pressure adjustment is required, which can better ensure the cleanliness of the growth chamber.

[0028] Combine the following Figure 1 The silicon carbide epitaxial growth apparatus of the present invention is described.

[0029] An embodiment of the present invention provides a silicon carbide epitaxial growth device, including a chamber, a valve group, a pressure control component and a material transfer mechanism. A growth chamber 110, a transfer chamber 120, a substrate sheet temporary storage chamber 130 and an epitaxial wafer temporary storage chamber 140 are arranged in the chamber, and the growth chamber 110, the substrate sheet temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140 are all connected to the transfer chamber 120. The valve group includes a first switch valve 210, a second switch valve 220 and a third switch valve 230, the first switch valve 210 is arranged between the substrate sheet temporary storage chamber 130 and the transfer chamber 120, the second switch valve 220 is arranged between the growth chamber 110 and the transfer chamber 120, and the third switch valve 230 is arranged between the epitaxial wafer temporary storage chamber 140 and the transfer chamber 120. The pressure control assembly includes a first pressure controller 310 and a second pressure controller 320. The first pressure controller 310 is used to control the pressure in the substrate temporary storage chamber 130, and the second pressure controller 320 is used to control the pressure in the epitaxial wafer temporary storage chamber 140. The material transfer mechanism is arranged in the transmission chamber 120, and the mobile clamping end of the material transfer mechanism can move between the growth chamber 110, the transmission chamber 120, the substrate temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140.

[0030] Before the silicon carbide epitaxial growth is performed, the first switch valve 210 and the third switch valve 230 are firstly ensured to be kept in a closed state, and then the pressure of the growth chamber 110 and the transfer chamber 120 is adjusted to the production pressure. Then the pressure of the substrate sheet temporary storage chamber 130 is adjusted to normal pressure by the first pressure controller 310, the substrate sheet temporary storage chamber 130 is opened, and the substrate sheet is placed in the substrate sheet temporary storage chamber 130. Then the pressure of the substrate sheet temporary storage chamber 130 is adjusted to the production pressure by the first pressure controller 310, and then the first switch valve 210 is opened, and then the substrate sheet in the substrate sheet temporary storage chamber 130 is transferred to the transfer chamber 120 by using the material transfer mechanism, and the first switch valve 210 is closed. Then the second switch valve 220 is opened, and the substrate sheet in the transfer chamber 120 is transferred to the growth chamber 110 by using the material transfer mechanism, and the second switch valve 220 is closed. After the growth is completed, the second switch valve 220 is opened, and the epitaxial wafer grown in the growth chamber 110 is transferred to the transmission chamber 120 by the material transfer mechanism. Then, the pressure in the epitaxial wafer temporary storage chamber 140 is adjusted to the production pressure by the second pressure controller 320, and then the third switch valve 230 is opened, and the epitaxial wafer in the transmission chamber 120 is transferred to the epitaxial wafer temporary storage chamber 140 by the material transfer mechanism, and the third switch valve 230 is closed. Then, the pressure in the epitaxial wafer temporary storage chamber 140 is adjusted to normal pressure by the second pressure controller 320, and then the epitaxial wafer temporary storage chamber 140 is opened to take out the epitaxial wafer, and thus, the growth of a silicon carbide epitaxial wafer is completed. The silicon carbide epitaxial wafer growth device provided by the present invention only needs to adjust the pressure of the substrate wafer temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140 during the silicon carbide growth process. Since the space of the substrate wafer temporary storage chamber 130 and the epitaxial wafer temporary storage chamber 140 is small, the pressure can be adjusted quickly to save growth time. The growth chamber 110 always maintains the production pressure without the need for pressure adjustment, which can better ensure the cleanliness of the growth chamber 110.

[0031] In some embodiments, the first switch valve 210 , the second switch valve 220 , and the third switch valve 230 are all gate valves.

[0032] In some embodiments, the material transfer mechanism may be a manipulator. The manipulator may transfer the substrate in the substrate temporary storage chamber 130 to the transfer chamber 120 when the first switch valve 210 is opened, may transfer the substrate in the transfer chamber 120 to the growth chamber 110 when the second switch valve 220 is opened, may transfer the epitaxial wafer grown in the growth chamber 110 to the transfer chamber 120 when the second switch valve 220 is opened, and may transfer the epitaxial wafer in the transfer chamber 120 to the epitaxial wafer temporary storage chamber 140 when the third switch valve 230 is opened.

[0033] In some embodiments, the pressure control range of the first pressure controller 310 is at least 50 mbar to normal pressure.

[0034] Since the growth pressure of silicon carbide epitaxial growth process is between 50mbar and 150mbar, the minimum control pressure of the first pressure controller 310 can reach at least 50mbar, and the pressure of the external environment is normal pressure, so the maximum control pressure of the first pressure controller 310 can reach at least normal pressure.

[0035] In some embodiments, the pressure control range of the second pressure controller 320 is at least 50 mbar to normal pressure.

[0036] Since the growth pressure of silicon carbide epitaxial growth process is 50mbar~150mbar, the minimum control pressure of the second pressure controller 320 can reach at least 50mbar, and the pressure of the external environment is normal pressure, so the maximum control pressure of the second pressure controller 320 can reach at least normal pressure.

[0037] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A silicon carbide epitaxial growth device, characterized in that: include: A cavity, wherein a growth chamber (110), a transmission chamber (120), a substrate temporary storage chamber (130) and an epitaxial wafer temporary storage chamber (140) are arranged in the cavity, and the growth chamber (110), the substrate temporary storage chamber (130) and the epitaxial wafer temporary storage chamber (140) are all connected to the transmission chamber (120); A valve group, comprising a first switch valve (210), a second switch valve (220) and a third switch valve (230), wherein the first switch valve (210) is arranged between the substrate temporary storage chamber (130) and the transfer chamber (120), the second switch valve (220) is arranged between the growth chamber (110) and the transfer chamber (120), and the third switch valve (230) is arranged between the epitaxial wafer temporary storage chamber (140) and the transfer chamber (120); A pressure control component, comprising a first pressure controller (310) and a second pressure controller (320), wherein the first pressure controller (310) is used to control the pressure in the substrate temporary storage chamber (130), and the second pressure controller (320) is used to control the pressure in the epitaxial wafer temporary storage chamber (140); A material transfer mechanism is disposed in the transmission chamber (120), and a movable clamping end of the material transfer mechanism is used to move between the substrate wafer temporary storage chamber (130), the transmission chamber (120), the growth chamber (110), and the epitaxial wafer temporary storage chamber (140).

2. The silicon carbide epitaxial growth device according to claim 1, characterized in that: The first switch valve (210) is a gate valve.

3. The silicon carbide epitaxial growth device according to claim 1, characterized in that: The second on-off valve (220) is a gate valve.

4. The silicon carbide epitaxial growth device according to claim 1, characterized in that: The third switch valve (230) is a gate valve.

5. The silicon carbide epitaxial growth device according to claim 1, characterized in that: The material transfer mechanism includes a manipulator.

6. The silicon carbide epitaxial growth device according to claim 1, characterized in that: The pressure control range of the first pressure controller (310) is at least 50 mbar to normal pressure.

7. The silicon carbide epitaxial growth device according to claim 1, characterized in that: The pressure control range of the second pressure controller (320) is at least 50 mbar to normal pressure.

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