Substrate processing apparatus and substrate processing method

Abstract

The invention discloses a substrate processing apparatus and a substrate processing method. Specifically disclosed is a substrate processing apparatus, comprising: a processing chamber for processing a substrate; a transfer unit for loading and unloading the substrate into and from a processing space in which the substrate is processed in the processing chamber; and a heating unit arranged to be loaded into and unloaded from the processing space and for cleaning the processing space by heating, in which the processing chamber comprises: a cavity providing the processing space; and a support unit for supporting the substrate in the processing space, and a fluid supply unit for supplying a fluid for processing the substrate into the processing space, and the heating unit includes a base portion and a heater mounted on the base portion.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0101639 filed in the Korean Intellectual Property Office on August 3, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly to an apparatus and a method for processing a substrate by supplying a supercritical fluid to the substrate. Background Art

[0004] In order to manufacture semiconductor devices, a desired pattern is formed on a substrate through various processes such as photography, etching, ashing, ion implantation, and thin film deposition. Each process uses various processing liquids, and contaminants and particles are generated during the process. To solve this problem, a cleaning process is required before and after each process to remove contaminants and particles.

[0005] Typically, the cleaning process is accomplished by treating the substrate with chemicals and rinse solutions, followed by drying. In recent years, organic solvents such as isopropyl alcohol (IPA) have been used as rinse solutions, and supercritical fluids have been used for drying.

[0006] After performing the supercritical treatment process, contaminants such as organic solvents and particles remain in the chamber where the supercritical treatment has been performed, for example in the structure of the chamber or in the crevices of the inner wall. These residues contaminate the chamber and again contaminate the substrates that are subsequently processed. In order to remove contaminants from the chamber, a cleaning fluid is typically used to clean the chamber. However, when a cleaning fluid is used to clean the chamber, the throughput of the equipment is reduced because the substrate needs to wait for the cleaning fluid attached to the inside of the chamber to dry. Summary of the invention

[0007] The present invention is directed to providing a substrate processing apparatus and method capable of effectively performing cleaning of a chamber.

[0008] The present invention is also directed to providing a substrate processing apparatus and method capable of reducing the time required for cleaning a chamber.

[0009] An exemplary embodiment of the present invention provides a substrate processing device, which includes: a processing chamber, which is used to process a substrate; a conveying unit, which is used to load the substrate into a processing space and unload the substrate from the processing space, in which the substrate is processed in the processing chamber; and a heating unit, which is configured to load into and unload from the processing space and to clean the processing space by heating, wherein the processing chamber includes: a cavity, which provides the processing space; and a supporting unit, which is used to support the substrate in the processing space; and a fluid supply unit, which is used to supply a fluid for processing the substrate into the processing space, and the heating unit includes: a base; and a heater, which is mounted on the base.

[0010] In an exemplary embodiment, the base may be provided in a shape capable of being supported by the supporting unit.

[0011] In an exemplary embodiment, the cavity may include: an upper body and a lower body, the upper body and the lower body are combined with each other to provide the processing space, the support unit is configured to support the shape of the edge area of ​​the substrate on the upper body; a filling piece, the filling piece is arranged below the support unit and in a position opposite to the substrate supported on the support unit; the support pin is arranged on the top surface of the filling piece, and the base is configured to be able to be supported on the support pin.

[0012] In an exemplary embodiment, the conveying unit may include: a hand and a substrate carrier, the hand supporting the substrate, the substrate carrier coupled to the hand and configured to be able to move forward and backward; and a heating unit carrier, the heating unit coupled to the heating unit carrier, and the heating unit carrier is configured to be able to move forward and backward.

[0013] In an exemplary embodiment, the heating unit carrier and the substrate carrier may be disposed to be spaced apart in upward and downward directions.

[0014] In an exemplary embodiment, the number of the heaters may be one or more, the base is coupled to the heating unit carrier, the base is formed with an opening penetrating the base in an upward and downward direction, and one or more heaters are positioned in the opening.

[0015] In an exemplary embodiment, the substrate processing apparatus may further include: a controller for controlling the conveying unit and the heating unit, wherein the controller may control the conveying unit and the heating unit to enable the heating unit to clean the processing space in a state where the heating unit is supported on the supporting unit.

[0016] In an exemplary embodiment, the substrate processing device may further include: a controller for controlling the conveying unit and the heating unit, wherein the controller controls the conveying unit and the heating unit to enable the heating unit to clean the processing space in a state where the heating unit is supported on the supporting pins.

[0017] In an exemplary embodiment, the heating unit can be configured to be movable by the conveying unit, and the substrate processing device further includes a controller that controls the conveying unit and the heating unit, and the controller controls the conveying unit and the heating unit to clean the processing space when the heating unit is set in the conveying unit.

[0018] In an exemplary embodiment, the controller may control the transfer unit to change a position of the heating unit within the processing space in the case of cleaning the processing space.

[0019] In an exemplary embodiment, the processing chamber may include: a shell body, which surrounds the cavity and forms an entrance through which the substrate is loaded; and an exhaust unit, which is used to exhaust the external area of ​​the cavity in the shell, and the cavity includes: an upper body and a lower body, which are combined with each other to provide a processing space; a driver, which is used to move the upper body or the lower body so that the relative position between the upper body and the lower body changes, and the controller controls the driver so that the processing space is cleaned in a state where the upper body and the lower body are spaced apart from each other and the cavity is opened.

[0020] In an exemplary embodiment, the heater may be a light emitting unit that emits light.

[0021] Another exemplary embodiment of the present invention provides a substrate processing method, which includes: a substrate processing operation, which loads a substrate into a processing space of a processing chamber and supplies a fluid to the processing space to process the substrate; and a chamber cleaning operation, which unloads the substrate from the processing space and cleans the processing space after the substrate processing operation, wherein the chamber cleaning operation includes loading a heating unit into the processing space and heating the processing space with a heater provided in the heating unit.

[0022] In an exemplary embodiment, the chamber cleaning operation may be an operation of removing organic matter remaining in the processing space by heating.

[0023] In an exemplary embodiment, the fluid may be a supercritical fluid, and in the substrate processing operation, a substrate to which an organic solvent has been applied may be loaded and the organic solvent may be removed from the substrate by using the supercritical fluid.

[0024] In an exemplary embodiment, the heater may be a light emitting unit that emits light.

[0025] Another exemplary embodiment of the present invention provides a substrate processing device, which includes: a processing chamber, which is used to remove the organic solvent remaining on the substrate from the substrate by using a supercritical fluid; a conveying unit, which is used to load the substrate into and unload the substrate from the processing space, in which the substrate is processed in the processing chamber; and a heating unit, which is configured to load into and unload from the processing space and to clean the processing space by heating, wherein the processing chamber includes: a cavity, which provides the processing space; a supporting unit, which is used to support the substrate in the processing space; and a fluid supply unit, which is used to supply the supercritical fluid to the processing space; and the cavity may include: an upper body and a lower body, which are combined with each other to provide the processing space; a driver, which is used to move the upper body or the lower body so that the relative position between the upper body and the lower body changes, and the heating unit includes: a base; and a heater, which is mounted on the base.

[0026] In an exemplary embodiment, the substrate processing apparatus may further include: a controller for controlling the conveying unit and the heating unit, wherein the controller may control the conveying unit and the heating unit to enable the heating unit to clean the processing space in a state where the heating unit is supported on the supporting unit.

[0027] In an exemplary embodiment, the substrate processing device may further include: a controller for controlling a conveying unit and a heating unit, wherein the supporting unit may be configured to be in the shape of an edge area of ​​a substrate supported on an upper body; a filling piece, which may be disposed below the supporting unit and in a position opposite to the substrate supported on the supporting unit; a supporting pin, which is disposed on a top surface of the filling piece, and the controller may control the conveying unit and the heating unit so that the heating unit cleans the processing space when the heating unit is supported on the supporting pin.

[0028] In an exemplary embodiment, the heater may be a light emitting unit that emits light.

[0029] According to the exemplary embodiments, the efficiency of cleaning the chamber may be improved when cleaning the chamber.

[0030] According to the exemplary embodiment, the residue inside the chamber may be removed by heating only the surface inside the chamber, thereby reducing damage to the chamber body.

[0031] According to the exemplary embodiments, time required to clean the chamber may be reduced when cleaning the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a top plan view schematically illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0033] Figure 2 It is schematically shown Figure 1 FIG. 1 is a diagram of an exemplary embodiment of a liquid processing chamber.

[0034] Figure 3 It is schematically shown Figure 1 FIG. 1 is a diagram of an exemplary embodiment of a drying chamber.

[0035] Figure 4 is a perspective view illustrating an exemplary embodiment of a transfer robot and a transfer hand.

[0036] Figure 5 is a perspective view showing an example of a heating unit.

[0037] Figure 6 and Figure 7 is a perspective view showing another example of the heating unit.

[0038] Figure 8 It shows that according to Figure 3 A flow chart of a method of processing a substrate in a drying chamber according to an exemplary embodiment.

[0039] Figures 9 to 13 is a schematic diagram showing the execution Figure 8 In the case of chamber cleaning operations, according to Figure 3 A diagram of the interior of a drying chamber of an exemplary embodiment.

[0040] Fig. 9 is schematically shown in Figure 8 FIG. 1 is a diagram of a substrate carrier that loads a heating unit into an interior of a drying chamber during a heating unit loading operation.

[0041] Figures 10 to 12 is a schematic diagram showing the execution Figure 8 In the case of chamber cleaning operations, according to Figure 3 A diagram of the interior of a drying chamber of an exemplary embodiment.

[0042] Fig.13 is schematically shown in Figure 8 A diagram of the interior of the drying chamber during a heating unit unloading operation.

[0043] Fig.14is a perspective view showing another exemplary embodiment of a heating unit.

[0044] Fig.15 yes Fig.14 A top plan view of a heating unit carrier.

[0045] Figures 16 to 18 It shows that Fig.15 The heating unit carrier performs Figure 8 FIG. 1 is a diagram of an exemplary embodiment of a chamber cleaning operation.

[0046] Fig.16 is schematically shown in Fig.15 The heating unit carrier performs Figure 8 In the case of heating unit loading operation, according to Figure 3 A diagram of the interior of a drying chamber of an exemplary embodiment.

[0047] Fig.17 It is schematically shown Fig.15 Diagram of a heating unit carrier performing chamber cleaning.

[0048] Fig.18 is schematically shown in Fig.15 The heating unit carrier performs Figure 8 A diagram of the interior of the drying chamber with the heating unit unloaded. DETAILED DESCRIPTION

[0049] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments are provided to make the disclosure thorough and to fully convey the scope to those skilled in the art. Many specific details (such as examples of specific components, equipment and methods) are set forth to provide a thorough understanding of the embodiments of the present disclosure. It will be apparent to those skilled in the art that specific details do not need to be adopted, and example embodiments can be embodied in many different forms, and specific details should not be construed as limiting the scope of the present disclosure. In some example embodiments, known processes, known equipment structures and known technologies are not described in detail.

[0050] The terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "a, an" and "the" may be intended to include plural forms. The terms "comprises, comprising", "including" and "having" are inclusive, and therefore specifically refer to the presence of the feature, integer, step, operation, element and / or component, but do not exclude the presence or increase of one or more other features, integers, steps, operations, elements, components and / or combinations thereof. Unless explicitly identified as an execution order, the method steps, processes and operations described herein should not be interpreted as having to be performed in the specific order discussed or illustrated. It should also be understood that additional or alternative steps may be adopted.

[0051] When an element or layer is referred to as being "on another element or layer," "engaged to another element or layer," "connected to another element or layer," or "coupled to another element or layer," the element or layer may be directly on, directly engaged to, connected to, or coupled to another element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as being "directly on another element or layer," "directly engaged to," "directly connected to," or "directly coupled to," there may be no intermediate elements or layers. Other words used to describe the relationship between elements should be interpreted similarly (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0052] Although the terms "first", "second", "third", etc. can be used to describe different elements, components, regions, layers and / or sections in this article, unless otherwise specified, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer and / or section from another region, layer and / or section. When used in this article, unless the context clearly indicates, terms such as "first", "second" and other numerical items do not imply order or sequence. Therefore, without departing from the teaching of the example embodiment, the first element, the first component, the first area, the first layer or the first section discussed below can be referred to as the second element, the second component, the second area, the second layer or the second section.

[0053] For ease of description, spatially relative terms (e.g., "inside," "outside," "below," "below," "below," "above," and "above," etc.) may be used herein to describe the relationship of one element or feature shown in the drawings to another (or other) element or feature. Spatially relative terms may be intended to cover different orientations of the device in use or operation in addition to the orientations described in the drawings. For example, if the device in the figure is turned over, an element described as being "below" or "beneath" other elements or features will subsequently be oriented to be "above" the other elements or features. Thus, the example term "below" may cover both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or oriented in other orientations), and the spatially relative descriptors used herein are interpreted accordingly.

[0054] When the terms "same" or "same" are used in the description of the exemplary embodiments, it should be understood that some imprecision may exist. Therefore, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance range (e.g., ±10%).

[0055] When the term "about" or "substantially" is used with a numerical value, it should be understood that the associated numerical value includes a manufacturing or operating tolerance (e.g., ±10%) around the numerical value. In addition, when the words "generally" and "substantially" are used in conjunction with geometric shapes, it should be understood that the exactness of the geometric shape is not required, but the latitude of the shape is within the scope of the present disclosure.

[0056] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should be further understood that terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0057] In this exemplary embodiment, the present invention will be described based on an apparatus for removing an organic solvent remaining on a substrate by using a supercritical fluid. However, this exemplary embodiment is not limited thereto and can be applied to other types of substrate processing apparatuses in which organic matter may remain in a chamber after performing a substrate processing process.

[0058] Hereinafter, one example of the substrate processing apparatus of the present invention will be described in more detail with reference to the accompanying drawings.

[0059] Figure 12 is a top plan view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention. Figure 1 , the substrate processing device 1 includes an index module 10 and a processing module 20. According to the exemplary embodiment, the index module 10 and the processing module 20 are arranged in one direction. Hereinafter, the direction in which the index module 10 and the processing module 20 are arranged is defined as a first direction 2. When viewed from above, a direction perpendicular to the first direction 2 is defined as a second direction 4, and a direction perpendicular to a plane including the first direction 2 and the second direction 4 is defined as a third direction 6.

[0060] The index module 10 transfers the substrate W from the container F in which the substrate W is accommodated to the process module 20 in which the substrate W is processed. The index module 10 accommodates the substrate W, which has been completely processed in the process module 20, into the container F. The longitudinal direction of the index module 10 is disposed in the second direction 4. The index module 10 includes a load port 120 and an index frame 140.

[0061] The container F accommodating the substrate W therein is seated in the load port 120. The load port 120 is located at the opposite side of the process module 20 based on the index frame 140. A plurality of load ports 120 may be provided. The plurality of load ports 120 may be arranged in a row along the second direction 4. The number of the load ports 120 may be increased or decreased according to the process efficiency and floor space conditions of the process module 20, etc.

[0062] A plurality of slots (not shown) are formed in the container F. The slots (not shown) can accommodate substrates W, which are placed horizontally relative to the ground. An airtight container such as a front opening unified pod (FOUP) can be used as the container F. The container F can be placed on the load port 120 by a conveying device (not shown) such as an overhead conveyor, an overhead transporter, or an automatic guided vehicle, or by an operator.

[0063] The index rail 142 and the index robot 144 are disposed inside the index frame 140. The index rail 142 is disposed in the index frame 140 in the longitudinal direction thereof along the second direction 4. The index robot 144 may transfer the substrate W. The index robot 144 may transfer the substrate W between the index module 10 and a buffer unit 220 to be described later.

[0064] The index robot 140 includes an index hand 146. On the index hand 146, the substrate W is placed. The index hand 146 can be configured to be movable along the second direction 4 on the index track 142. Therefore, the index hand 146 can move forward and backward along the index track 142. In addition, the index hand 146 can be configured to be rotatable around the third direction 6 as an axis. In addition, the index hand 146 can be configured to be able to move vertically along the third direction 6. A plurality of index hands 146 can be provided. The plurality of index hands 146 can be spaced apart from each other in the vertical direction. The plurality of index hands 146 can move forward, backward and rotationally independently of each other.

[0065] The controller 30 can control the substrate processing device 1. The controller 30 may include: a process controller, which is composed of a microprocessor (computer) that performs control of the substrate processing device; a user interface, which is composed of a keyboard, in which the operator performs command input operations, etc. in order to manage the substrate processing device 1; a display, which is used to visualize and display the operating status of the substrate processing device 1, etc.; and a storage unit, which stores a control program for executing a process performed in the substrate processing device 1 under the control of the process controller, or stores a program (i.e., a processing scheme) for executing a process in each component according to various data and processing conditions. Further, the user interface and the storage unit may be connected to the process controller. The processing scheme may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, or a portable disk (such as a CD-ROM or DVD) or a semiconductor memory (such as a flash memory).

[0066] The controller 30 may control the substrate processing apparatus 1 so as to perform a substrate processing method to be described below. For example, the controller 30 may control a configuration provided in the drying chamber 400 so as to perform a substrate processing method to be described below.

[0067] For example, the controller 30 may control the transfer unit 244 and the heating unit 500 so that the heating unit 500 described later cleans the processing space 421 .

[0068] The processing module 20 includes a buffer unit 220, a transfer frame 240, a liquid processing chamber 300, and a drying chamber 400. The buffer unit 220 provides a buffer space where the substrate W loaded into the processing module 20 and the substrate W unloaded from the processing module 20 temporarily stay. The transfer frame 240 provides a transfer space for transferring the substrate W between the buffer unit 220, the liquid processing chamber 300, and the drying chamber 400.

[0069] The liquid treatment chamber 300 may perform a liquid treatment process by supplying a liquid onto the substrate W to liquid-treat the substrate W. The drying chamber 400 may perform a drying process to remove any residual liquid on the substrate W. The liquid treatment chamber 300 and the drying chamber 400 may perform a cleaning process. The cleaning process may be sequentially performed in the liquid treatment chamber 300 and the drying chamber 400. For example, the liquid treatment chamber 300 may treat the substrate W by supplying chemicals, a rinse liquid, and / or an organic solvent onto the substrate W. For example, in the drying chamber 400, a drying process may be performed by removing any residual liquid on the substrate W using a supercritical fluid.

[0070] The buffer unit 220 may be disposed between the index frame 140 and the transfer frame 240. The buffer unit 220 may be located at one end of the transfer frame 240. A slot (not shown) in which the substrate W is placed is disposed inside the buffer unit 220. A plurality of slots (not shown) are provided. The plurality of slots (not shown) may be spaced apart from each other along the third direction 6. The front and rear of the buffer unit 220 are open. The front may be a surface facing the index module 10, and the rear may be a surface facing the transfer frame 240. The index robot 144 may approach the buffer unit 220 through the front, and the transfer unit 244 to be described below may approach the buffer unit 220 through the rear.

[0071] The conveying frame 240 may be disposed with its longitudinal direction along the first direction 2. The liquid processing chamber 300 and the drying chamber 400 may be disposed on both sides of the conveying frame 240. The liquid processing chamber 300 and the drying chamber 400 may be disposed on the side of the conveying frame 240. The conveying frame 240 and the liquid processing chamber 300 may be disposed along the second direction 4. Further, the conveying frame 240 and the drying chamber 400 may be disposed along the second direction 4.

[0072] In one example, the liquid processing chamber 300 is disposed on the opposite side of the conveying frame 240, and the drying chamber 400 is disposed on the opposite side of the conveying frame 240. The liquid processing chamber 300 may be disposed closer to the buffer unit 220 than the drying chamber 400. At one side of the conveying frame 240, the liquid processing chamber 300 may be disposed in an A×B array (each of A and B is a natural number of 1 or greater) along the first direction 2 and the third direction 6. Here, "A" is the number of liquid processing chambers 300 disposed in a row along the first direction 2, and "B" is the number of liquid processing chambers 300 disposed in a row along the third direction 6. For example, when four liquid processing chambers 300 are disposed at one side of the conveying frame 240, the liquid processing chambers 300 may be disposed in a 2×2 arrangement. The number of liquid processing chambers 300 may be increased or decreased. As described above, the liquid processing chamber 300 may be provided only on one side of the conveying frame 240, and the drying chamber 400 may be arranged only on the other side opposite to the one side. Further, the liquid processing chamber 300 and the drying chamber 400 may be provided in a single layer on one side and the opposite side of the conveying frame 240.

[0073] The transfer frame 240 includes a guide rail 242 and a transfer unit 244. The guide rail 242 is disposed in the transfer frame 240 such that the longitudinal direction is the first direction 2. The transfer unit 244 may be disposed to be able to linearly move along the first direction 2 on the guide rail 242. The transfer unit 244 transfers the substrate W between the buffer unit 220, the liquid processing chamber 300, and the drying chamber 400.

[0074] The conveying unit 244 includes a conveying hand 246 on which the substrate W is placed. The conveying hand 246 can be arranged to be movable along the first direction 2 on the guide rail 242. Accordingly, the conveying hand 246 can move forward and backward along the guide rail 242. In addition, the conveying hand 246 can be arranged to be rotatable around the third direction 6 and movable along the third direction 6. A plurality of conveying hands 246 can be provided. The plurality of conveying hands 246 can be arranged to be spaced apart from each other in the vertical direction. The plurality of conveying hands 246 can move forward, backward and rotationally independently of each other.

[0075] The liquid processing chamber 300 performs a liquid processing process on the substrate W. For example, the liquid processing chamber 300 may be a chamber that performs a cleaning process to remove process byproducts attached to the substrate W. The liquid processing chamber 300 may have different structures according to the type of process for processing the substrate W. Different from this, each of the liquid processing chambers 300 may have the same structure.

[0076] Figure 2 It is schematically shown Figure 1 FIG. 1 is a diagram of an exemplary embodiment of a liquid processing chamber. Figure 2 The liquid processing chamber 300 includes a housing 310 , a processing container 320 , a supporting unit 330 , and a liquid supply unit 340 .

[0077] The housing 310 has a space therein. The housing 310 is arranged in a substantially rectangular parallelepiped shape. An opening (not shown) is formed at one side of the housing 310. The opening (not shown) serves as an entrance through which the substrate W is loaded into or unloaded from the inner space of the housing 310 by the conveying unit 244. The processing container 320, the supporting unit 330, and the liquid supply unit 340 are arranged in the inner space of the housing 310.

[0078] The processing container 320 has a processing space with an open upper portion. The processing container 320 may be a bowl having a processing space. The processing container 320 may be disposed to surround the processing space. The processing space of the processing container 320 is configured as a space in which the substrate W is supported and rotated by the supporting unit 330 to be described below. The processing space is configured as a space for the liquid supply unit 340 to be described below for supplying liquid onto the substrate W to process the substrate W.

[0079] According to an example, the processing container 320 may have a guide wall 321 and a plurality of collecting containers 323, 325, and 327. Each of the collecting containers 323, 325, and 327 collects different liquids from the liquid for processing the substrate W. Each of the collecting containers 323, 325, and 327 may have a collecting space for collecting the liquid for processing the substrate W.

[0080] The guide wall 321 and the collection containers 323, 325, and 327 are provided in an annular ring shape around the support unit 330. When liquid is supplied to the substrate W, the liquid dispersed by the rotation of the substrate W may enter the collection space through the respective inlets of the collection containers 323, 325, and 327 to be described below. Different types of liquids may be introduced into the collection containers 323, 325, and 327, respectively.

[0081] The support unit 330 supports and rotates the substrate W in the processing space. The support unit 330 may have a spin chuck 331 , support pins 333 , chuck pins 335 , a rotation shaft 337 , and a driver 339 .

[0082] The spin chuck 331 has a substantially circular top surface when viewed from the top. The top surface of the spin chuck 331 may have a diameter greater than that of the substrate W.

[0083] A plurality of support pins 333 are provided. The support pins 333 are provided on the top surface of the spin chuck 331. The support pins 333 are spaced apart at a fixed interval at an edge portion of the top surface of the spin chuck 331. The support pins 333 are formed to protrude upward from the top surface of the spin chuck 331. The support pins 333 are arranged in combination with each other to form an overall annular shape. The support pins 333 support an edge region of the rear surface of the substrate W so that the substrate W is spaced apart from the top surface of the spin chuck 331 by a predetermined distance.

[0084] A plurality of chuck pins 335 are provided. The chuck pins 335 are provided relatively farther from the central region of the rotation chuck 331 than the support pins 333. The chuck pins 335 protrude upward from the top surface of the rotation chuck 331. The chuck pins 335 support the side regions of the substrate W to prevent the substrate W from deviating from its fixed position from the side when the substrate W is rotated.

[0085] The rotating shaft 337 is coupled to the rotating chuck 331. The rotating shaft 337 is coupled to the base surface of the rotating chuck 331. The rotating shaft 337 can be arranged so that the longitudinal direction faces the third direction 6. The rotating shaft 337 is arranged to be able to rotate by receiving power from a driver 339. The rotating shaft 337 is rotated by the driver 339, and the rotating chuck 331 is rotated by the medium of the rotating shaft 337. The driver 339 rotates the rotating shaft 337. The driver 339 can change the rotation speed of the rotating shaft 337. The driver 339 can be a motor that provides a driving force. However, the driver is not limited thereto, and can be provided as various variations of any known device that provides a driving force.

[0086] The liquid supply unit 340 supplies liquid to the substrate W. The liquid supply unit 340 supplies liquid to the substrate W supported by the supporting unit 330. The liquid supplied to the substrate W by the liquid supply unit 340 is provided in a plurality of types. In one example, the liquid supplied to the substrate W by the liquid supply unit 340 may include a first liquid and a second liquid. The first liquid and the second liquid may be liquids of different types. The first liquid and the second liquid may be supplied to the substrate W sequentially.

[0087] The first liquid supply nozzle 344 supplies the first liquid onto the substrate W. The first liquid supply nozzle 344 may supply the first liquid onto the substrate W supported on the supporting unit 330. The second liquid supply nozzle 345 supplies the second liquid onto the substrate W. The second liquid supply nozzle 345 supplies the second liquid onto the substrate W supported on the supporting unit 330.

[0088] The first liquid and the second liquid can be any one of a chemical, a flushing liquid, and an organic solvent. For example, the chemical can include dilute sulfuric acid (H 2 SO 4 ), phosphoric acid (P2 O 5 ), hydrofluoric acid (HF) and ammonium hydroxide (NH 4 OH). For example, the rinse liquid may include water or deionized water (DIW). For example, the organic solvent may include an alcohol, such as isopropyl alcohol (IPA). According to an exemplary embodiment, the first liquid may be a liquid that removes any residual film or foreign matter remaining on the substrate W. According to an exemplary embodiment, the second liquid may be a liquid that neutralizes the first liquid. In one example, the second liquid may be a liquid that is easily soluble in the drying fluid. Further, the second liquid may be a liquid that is easily soluble in the supercritical fluid used in the drying chamber 400 to be described later. In one example, the second liquid may be a liquid that is relatively more soluble in the drying fluid described herein than the first liquid.

[0089] The lifting unit 350 is disposed in the inner space of the housing 310. The lifting unit 350 adjusts the relative height between the processing container 320 and the supporting unit 330. The lifting unit 350 can linearly move the processing container 320 in the third direction 6. Accordingly, since the heights of the collection containers 323, 325, and 327 for collecting liquids are changed according to the type of liquid supplied to the substrate W, the liquids can be separated and collected. As described above, the processing container 320 is fixedly installed, and the lifting unit 350 moves the supporting unit 330 in the upward or downward direction to change the relative height between the supporting unit 330 and the processing container 320.

[0090] Figure 3 To schematically show Figure 1 FIG. 1 is a diagram of an exemplary embodiment of a drying chamber. Figure 3 , the drying chamber 400 may include a housing 410 , a cavity 420 , a support unit 430 , a fluid supply unit 440 , a discharge line 450 , a filling member 460 , and a controller 470 .

[0091] The housing 410 is provided in the shape of a barrel having an inner space 411 therein. For example, the housing 410 may be provided in a cubic shape. The housing 410 includes a bottom wall 412, a top wall 413, and a plurality of side walls 414. The top wall 413 and the bottom wall 412 are arranged opposite to each other. The plurality of side walls 414 connect the bottom wall 412 and the top wall 413. Any of the plurality of side walls 414 is provided with an opening 415 through which the substrate W is loaded and unloaded. The opening 415 is formed in the side wall 414 opposite to the passage through which the conveying unit 244 travels.

[0092] The exhaust unit 416 is disposed on another side wall 414 of the plurality of side walls 414. In one example, the exhaust unit 416 may be formed in the side wall 414 opposite to the side wall 414 in which the opening 415 is formed. The exhaust unit 416 exhausts the atmosphere of the inner space 411 of the housing 410 and the processing space 421 of the cavity 420. When the drying chamber is opened, pollutants inside the drying chamber 400 may be exhausted to maintain a high level of cleanliness inside the drying chamber 400.

[0093] The inner space 411 of the housing 410 accommodates the chamber 420. The chamber 420 provides a processing space 421 in which the substrate W is subjected to a drying process. The chamber 420 may include an upper body 422, a lower body 424, and an elevating member 426.

[0094] The upper body 422 and the lower body 424 are combined with each other to provide a processing space 421. The upper body 422 is positioned above the lower body 424. The upper body 422 may be provided with a first supply port 422a, and the lower body may be formed with a second supply port 424a. In one example, when viewed from above, the first supply port 422a may be formed in a central area of ​​the upper body 422. In one example, when viewed from above, the second supply port 424a may be formed in an area eccentric at a predetermined distance from the central axis of the lower body 424. The lower body 424 may be further provided with a discharge port 424b. When viewed from above, the discharge port 424b may be formed in a central portion of the lower body 424. For example, the discharge port 424b may be provided at a position spaced a predetermined distance from the second supply port 424a.

[0095] The position of the upper body 422 is fixed, and the lower body 424 can be lifted by a lifting member 426 to be described later. When the lower body 424 descends and is spaced apart from the upper body 422, the processing space 421 is opened. When the processing space 421 is opened, a substrate W can be loaded into the processing space 421, or a substrate W can be unloaded from the processing space 421. The substrate W loaded into the processing space 421 can be a substrate W that has completed liquid processing in the liquid processing chamber 300.

[0096] The processing space 421 is sealed when the lower body 424 moves upward and closely contacts the upper body 422. When the processing space 421 is sealed, a drying process may be performed on the substrate W by supplying a supercritical fluid.

[0097] The lifting member 426 lifts the lower body 424. The lifting member 426 may include a driver to lift the lower body 424. For example, the lifting member 426 may include a cylinder 427. The lifting member may continuously pressurize the lower body so that the upper body 422 and the lower body 424 are kept in close contact when the drying process is performed.

[0098] Optionally, a clamping unit (not shown) for clamping the upper body and the lower body may be provided to prevent the processing space from being opened due to the internal pressure of the processing space during a process.

[0099] According to one example of the present invention described above, the present invention has been described based on the case where the lower body 424 moves in the upward and downward directions to seal the processing space 421 as an example, but is not limited thereto. For example, the upper body 422 may move in the upward and downward directions, and the position of the lower body 424 may be fixed.

[0100] The heater 429 may be installed in the cavity 420. In one example, the heater 429 may be installed while being buried in a wall of at least one of the upper body 422 and the lower body 424. The heater 429 may heat the process fluid supplied to the processing space 421 to a critical temperature or higher to keep the process fluid in a supercritical fluid phase, or, when the process fluid is liquefied, the heater 429 may heat the process fluid back to a supercritical fluid phase.

[0101] The support unit 430 supports the substrate W in the processing space 421. The support unit 430 may be fixedly installed on the bottom surface of the upper body 422. The support unit 430 may have a fixing rod 432 and a mounting bracket 434.

[0102] The fixing rod 432 may be fixedly mounted on the upper body 422 so that the fixing rod 432 protrudes downward from the bottom surface of the upper body 422. The fixing rod 432 may be arranged in an upward and downward direction along its length. A plurality of fixing rods 432 may be provided. The plurality of fixing rods 432 are spaced apart from each other. When a substrate W is loaded into or unloaded from a space surrounded by the plurality of fixing rods 432, the plurality of fixing rods 432 are arranged so that the plurality of fixing rods 432 do not interfere with the substrate W. Each of the fixing rods 432 is coupled to a mounting bracket 434.

[0103] The mounting bracket 434 extends from the fixing rod 432. The mounting bracket 434 may extend from the bottom end of the fixing rod 432 in a direction toward the space surrounded by the fixing rod 432. The mounting bracket 434 may extend upward from the extended end to support an area of ​​the rear edge of the substrate W. According to one example, the rear surface of the substrate W may be a non-patterned surface, and the top surface of the substrate W may be a patterned surface. Due to the structure described above, an edge area of ​​the substrate W loaded into the processing space 421 may be placed on the mounting bracket 434. In addition, a portion of the entire top surface of the substrate W, a central area of ​​the bottom surface of the substrate W, and a portion of the edge area of ​​the bottom surface of the substrate W may be exposed to the process fluid supplied to the processing space 421.

[0104] The fluid supply unit 440 supplies the process fluid to the processing space 502. In an exemplary embodiment, carbon dioxide (CO 2 ) gas can be used as a process fluid. Carbon dioxide can reach a supercritical state by a temperature of 30°C or higher and a pressure of 7.4Mpa or higher. In the following, carbon dioxide gas is used as an example to describe the process fluid. According to one example, the process fluid can be supplied to the processing space 421 in a supercritical state. However, the present application is not limited to this, and the process fluid can be supplied to the processing space 421 in a gaseous state and phase-changed to a supercritical state within the processing space 421. In one example, the fluid supply unit 440 includes a main supply line 442, an upper branch line 444, and a lower branch line 446. The upper branch line 444 and the lower branch line 446 branch from the main supply line 442. The upper branch line 444 is coupled to the first supply port 422a to supply the process fluid from the top of the substrate W placed on the support unit 430. The lower branch line 446 is coupled to the second supply port 424a to supply the process fluid from the lower portion of the substrate W placed on the support unit 430.

[0105] The exhaust line 450 exhausts the atmosphere of the processing space 421. The exhaust line 450 may be connected to an exhaust port 424b formed in the lower body 424. The process fluid flowing through the processing space 421 is discharged to the outside of the chamber 420 through the exhaust line 450.

[0106] The filling member 460 is located inside the processing space 421. The filling member 460 is located below the support unit 430. When viewed from above, the filling member 460 may be arranged to overlap with the supply port 424a and the exhaust port 424b formed in the lower body 424. The filling member 460 may prevent the process fluid supplied through the supply port 424a from being directly discharged toward the substrate W and prevent the substrate W from being damaged. The filling member 460 includes a filling piece 461, a support fixture 462, and a support pin 463.

[0107] The filling member 461 is provided in the shape of a plate having a predetermined thickness. The filling member 461 may be in a hollow form or in a filled form. The filling member 461 has a top surface, a bottom surface and a side surface. The top surface and the bottom surface face each other to be arranged side by side. The top surface has a larger area than the bottom surface. In a state where the interior of the cavity 420 is sealed, the top surface of the filling member 461 may maintain a predetermined interval with the bottom surface of the substrate W supported by the mounting bracket 434. The bottom surface of the filling member 461 is provided to face the first bottom surface 425b of the cavity 420. The bottom surface is spaced apart from the first bottom surface 425b of the cavity 420 at a predetermined interval. The filling member 461 may be supported by a support fixing member 462 to be spaced apart from the first bottom surface 425b of the cavity 420. The support fixing member 462 may be provided in a rod shape. A plurality of support fixing members 462 may be provided. A plurality of support fixing members 462 are spaced apart from each other at a predetermined distance. The side surface of the filler 461 connects the top surface and the bottom surface of the filler 461. The side surface of the filler 461 extends from the bottom surface and tilts upward so that the cross-sectional area of ​​the filler gradually widens toward the top. The side surface of the filler 461 can be arranged in a row with the inclined surface 425a. The side surface of the filler 461 can be arranged to have an area facing the inclined surface 425a. The side surface of the filler 461 is spaced apart from the inclined surface 425a by a predetermined distance. In one example, the side surface of the filler 461 can be spaced apart from the inclined surface 425a by a distance of 0.1 cm to 2 cm.

[0108] The filler 461 includes a plurality of support pins 463 disposed on a top surface thereof. When the interior of the cavity 420 is sealed, the plurality of support pins 463 may support the bottom surface of the substrate W. When the mounting bracket 434 supports the bottom surface of the substrate and the interior of the cavity 420 is sealed, the height of the plurality of support pins 463 protruding from the top surface of the filler 461 may be equal to or less than the spacing between the top surface of the filler 461 and the bottom surface of the substrate W.

[0109] After the drying chamber 400 removes the residual liquid on the substrate W by using the process fluid as described in the above example, the residue on the substrate W remains in the processing space 421 of the drying chamber 400 and the inner wall surface of the cavity body 420. These residues may exist in a dead space within the processing space or between internal structures of the cavity body 420, particularly at a sealing point where the upper body 422 and the lower body 424 are joined during supply and discharge of the process fluid. For example, the residue may come from organic matter containing an organic solvent, such as isopropyl alcohol (IPA), or from other sources.

[0110] The contamination of the chamber 420 by these residues may contaminate a substrate W subsequently processed in the chamber 420 .

[0111] Therefore, in order to remove any remaining contaminants of the cavity 420 , the interior of the cavity 420 is cleaned by the heating unit 500 .

[0112] The heater unit 500 includes a base 510 and a heater 520. The heater 520 may be mounted to the base 510.

[0113] According to one example, the base 510 may be provided in a shape capable of being supported on the support unit 430 in the chamber 420. Optionally, the base 510 may be provided in a shape capable of being supported on the plurality of support pins 463. For example, the base 510 may be provided in a shape corresponding to the substrate W. Optionally, the base may be provided in a shape that may be placed on the bottom wall of the chamber.

[0114] The base 510 may be provided with a power unit 530 to provide power to the heater 520 .

[0115] The base 510 may be provided with one or more heaters 520 mounted on the base 510 .

[0116] Heater 520 includes a heat source that generates heat. For example, the heat source can be a light source. In one example, heater 520 can be a lamp. In another example, heater 520 can be a heating wire that generates heat using resistance.

[0117] There may be various exemplary embodiments for the structure in which the heater 520 is installed in the base 510. According to an exemplary embodiment, one or more openings penetrating the base 510 in the vertical direction are formed in the base 510, and one or more heaters 520 may be installed in these openings. In another exemplary embodiment, one or more heaters 520 may be installed on the top surface and / or the bottom surface of the base 510.

[0118] The heating unit 500 may be stored in the buffer unit 220. Optionally, the heating unit 500 may be stored in a separate space provided at a position located on the path of the transfer unit 244.

[0119] Figure 4 2 is a perspective view showing an exemplary embodiment of a transfer robot and a transfer hand. The plurality of transfer hands 246 can move forward, backward, and rotationally independently of each other, so that the plurality of substrate carriers 246a can load and unload substrates W into and from the processing space 421 of the drying chamber 400, or load and unload the heating unit 500 stored in the buffer unit 220 into and from the processing space 421.

[0120] Figure 5is a perspective view showing an example of a heating unit.

[0121] Reference Figure 5 , the heating unit 500 includes a base 510 , a heater 520 , and a power unit 530 .

[0122] The base 510 is provided in a disc shape. The base 510 is formed with an opening penetrating in the upward and downward directions. The heater 520 is positioned in the opening. The power unit 530 is provided on the top surface of the base 510. When power is applied to the heater 520 by the power unit 530, the heat generated by the heater 520 can be transferred in the upward and downward directions of the base 510. A plurality of heaters 520 can be positioned in the opening. Optionally, a plurality of openings can be formed in the base 510, and the heater 520 can be positioned in each of the openings.

[0123] Figure 6 and Figure 7 is a perspective view showing another example of the heating unit.

[0124] Reference Figure 6 , the heating unit 500a includes a base 510a, one or more heaters 520a, and a power unit 530a.

[0125] The base 510a may be provided in a disk shape. The heater 520a is installed on the top surface of the base 510a. When power is applied to the heating unit 520a, heat generated by the heating unit 520a may be transferred to an upward direction of the base 510a.

[0126] Reference Figure 7 , the heating unit 500b includes a base 510b, one or more heaters 520b and a power unit 530b.

[0127] The base 510b is set in a disc shape. The bottom surface of the base 510b is provided with one or more supporting members capable of supporting the base 510b. On the top surface of the base 510b, a plurality of heaters 520b and a power unit 530b are installed. When power is applied to the heater 520b through the power unit 530b, the heat generated by the heater 520b can be transferred to all directions.

[0128] Figure 8 It is shown that according to Figure 3 A flow chart of a method of processing a substrate in a drying chamber according to an exemplary embodiment.

[0129] Reference Figure 8, the substrate processing method according to the exemplary embodiment of the present invention includes a substrate processing operation S10 and a chamber cleaning operation S20. In the substrate processing operation S10, a process of removing residual liquid on the substrate W by using a process fluid is performed in a state where the substrate W is introduced into the drying chamber 400. When the substrate processing operation S10 is finished, the substrate W is unloaded from the drying chamber 400 by the substrate carrier 246a of the transfer unit 244. Then, the chamber cleaning operation S20 is performed.

[0130] The chamber cleaning operation S20 may include a series of operations including a heating unit loading operation S21 , a chamber cleaning operation S22 , and a heating unit unloading operation S23 .

[0131] Figures 9 to 13 is a schematic diagram showing the execution Figure 8 In the case of chamber cleaning operations, according to Figure 3 A diagram of the interior of a drying chamber of an exemplary embodiment.

[0132] Fig. 9 is schematically shown in Figure 8 FIG. 1 is a diagram of a substrate carrier that loads a heating unit into an interior of a drying chamber during a heating unit loading operation.

[0133] Reference Fig. 9 , the substrate carrier 246a is in a state of supporting the heating unit 500. The substrate carrier 246a loads the heating unit 500 into the drying chamber 400 through the opening 415 formed in the side wall 414 of the drying chamber 400. At this time, the lower body 424 and the upper body 422 of the cavity 420 are spaced apart, thereby opening the processing space 421, and the heating unit 500 is loaded into the processing space 421.

[0134] Figures 10 to 12 is a schematic diagram showing the execution Figure 8 In the case of chamber cleaning operations, according to Figure 3 A diagram of the interior of a drying chamber of an exemplary embodiment.

[0135] exist Fig.10 In the exemplary embodiment shown in FIG. Figure 5 and Figure 6 When heating, the heating unit 500 may be placed on the support unit 430 through the substrate carrier 246a, and the heating unit 500 may be supported by the support unit 430. When power is applied to the heating unit 500 by the power unit 530 included in the heating unit 500, the heater 520 heats the inside of the cavity 420 to clean the cavity 420.

[0136] Optionally, as Fig.11 As shown in the exemplary embodiment, when using Figure 5 and Figure 6 When heating, the heating unit 500 may be placed on the support pins 463 through the substrate carrier 246a, and the heating unit 500 may be supported by the support pins 463. When power is applied to the heating unit 500 by the power unit 530 included in the heating unit 500, the heater 520 heats and cleans the inside of the cavity 420.

[0137] exist Fig.12 In the exemplary embodiment shown, according to Figure 7 The heating unit 500b can be placed on the first bottom surface 425b of the cavity 420 by an operator instead of the substrate carrier 246a, and the base 510b of the heating unit 500b can be supported by the first bottom surface 425b. In this case, the filling member 460 is in a removed state. When power is applied to the heating unit 500 by the power unit 530 included in the heating unit 500, the heater 520 heats and cleans the inside of the cavity 420.

[0138] Fig.13 is schematically shown in Figure 8 A diagram of the interior of the drying chamber during a heating unit unloading operation.

[0139] Reference Fig.13 , the substrate carrier 246 a is unloaded from the inside of the drying chamber 400 through the opening 415 while supporting the heating unit 500 .

[0140] Figures 10 to 12 The chamber cleaning operation S22 is shown in a state where the lower body 424 and the upper body 422 of the chamber 420 are spaced apart and the processing space 421 is opened, but the present invention is not limited thereto. The chamber cleaning operation S22 may also be performed in a state where the chamber 420 is closed. In this case, the lower body 424 and the upper body 422 are in close contact, and the processing space 421 is sealed.

[0141] In the chamber cleaning operation S20, the atmosphere in the processing space 421 is exhausted. When the chamber 420 is open, the exhaustion is performed by the exhaust unit 416. When the chamber 420 is closed, the exhaustion is performed through the exhaust line 450 connected to the exhaust port 424b.

[0142] The exhaust unit 416 is provided in the sidewall 414 of the housing 410. In one example, the exhaust unit 416 may be formed in the sidewall 414 opposite to the sidewall 414 in which the opening 415 is formed. The exhaust unit 416 exhausts atmosphere of the inner space 411 of the housing 410 and the processing space 421 of the chamber 420.

[0143] Refer again Figure 8After a certain number of substrates W are processed in the drying chamber 400, a chamber cleaning operation S20 may be optionally performed. After each substrate W is processed in the drying chamber 400, a chamber cleaning operation S20 may be optionally performed.

[0144] By performing the chamber cleaning operation S20, contaminants inside the cavity 420 of the drying chamber 400 and in the processing space 421, such as an organic solvent that is not discharged and remains in the processing space 421, can be removed by heating. For example, the organic solvent can be isopropyl alcohol (IPA). By performing the chamber cleaning operation S20, organic matter deposited or remaining on the cavity 420 can be removed. By performing the chamber cleaning operation S20, the drying chamber 400 and the cavity 420 can be prevented from being contaminated, and the substrate W can be prevented from being contaminated again by the contaminants of the cavity 420 when performing the subsequent substrate processing operation S10. By performing the chamber cleaning operation S20, poor processing of the substrate W can be prevented.

[0145] The chamber cleaning operation S20 may also be performed during maintenance of the substrate processing apparatus. When the chamber cleaning operation S20 is performed during maintenance, the heating unit 500 may be loaded into the chamber by an operator. When the chamber 420 and the processing space 421 are cleaned by supplying a cleaning liquid to the chamber 420 during maintenance, even after the cleaning is finished, it takes a long time to stabilize the equipment due to waiting for the cleaning liquid to dry. In addition, only the surface of the drying chamber 420 may be dried and the cleaning liquid that has penetrated deeply into the chamber 420 may not be completely dried, which may cause damage to the chamber 420 during the substrate processing operation S10.

[0146] When the chamber cleaning operation S20 of the present invention is performed together with maintenance, it can reduce the time required to stabilize the chamber by eliminating the need to wait for the cleaning liquid to dry.

[0147] In particular, when the illuminating lamp is used as the heater 520, the chamber cleaning can be performed by heating the inside of the cavity 420 at a high temperature. In addition, when the illuminating lamp is used as the heater 520, the chamber cleaning can be performed for a short period of time, such as tens of seconds or minutes. In addition, the heater installed on the inner wall of the chamber may damage the cavity. However, when the illuminating lamp is loaded into the processing space to heat the processing space, the damage to the cavity 420 caused by concentrated heating of the inner surface of the cavity 420 can be reduced.

[0148] Figures 10 to 12The case where the chamber cleaning operation S22 is performed in a state where the heating unit 500 is placed inside the cavity 420 is shown, but the present invention is not limited thereto. The heating unit 500 may perform the chamber cleaning operation S22 while being supported by the substrate carrier 246a. In this case, the substrate carrier 246a may perform the chamber cleaning operation S22 while moving in the upward and downward directions and / or the left and right directions in the processing space 421. When the chamber cleaning operation S22 is performed while the substrate carrier 246a moves in the processing space 421, the substrate carrier 246a may selectively clean a specific point in the processing space 421. Further, the cleaning time of a specific point inside the processing space 421 may be adjusted to improve the cleaning efficiency of the chamber.

[0149] Fig.14 is a perspective view showing another exemplary embodiment of a heating unit. Fig.14 , the heating unit can be set in a state of being coupled to the transfer robot.

[0150] Reference Fig.14 The transfer unit 244 includes a substrate carrier 246a and a heating unit carrier 246b. The substrate carrier 246a and the heating unit carrier 246b are positioned to be spaced apart in the upward and downward directions. The heating unit carrier 246b is configured to move forward and backward independently of the substrate carrier 246a.

[0151] The heating unit carrier 246b is provided to be movable in an upward and downward direction or a left and right direction, and to be movable forward and backward.

[0152] Fig.15 yes Fig.14 A top plan view of a heating unit carrier.

[0153] The heating unit carrier 246b is arranged to be coupled to the heating unit 500c. The heating unit 500c comprises a base 510c, one or more heaters 520c and a power supply 540. The base 510c can be arranged in the shape of two opposite rods. One or more heaters 520c are installed between the two opposite bases 510c. When the heater 520c is powered by the power supply 540, the heat generated by the heater 520c can be transferred in all directions.

[0154] Figures 16 to 18 It shows that Fig.15 The heating unit carrier performs Figure 8 FIG. 1 is a diagram of an exemplary embodiment of a chamber cleaning operation.

[0155] Fig.16 is schematically shown in Fig.15 The heating unit carrier performs Figure 8In the case of heating unit loading operation, according to Figure 3 A diagram of the interior of a drying chamber of an exemplary embodiment.

[0156] Reference Fig.16 , the heating unit carrier 246b loads the heating unit 500c into the interior of the drying chamber 400 through the opening 415 formed in the side wall 414 of the drying chamber 400. The heating unit 500c is in a state of being coupled to the heating unit carrier 246b. In this case, the lower body 424 and the upper body 422 of the cavity 420 are spaced apart, so that the processing space 421 is opened and the heating unit 500c is loaded into the processing space 421.

[0157] Fig.17 It is schematically shown Fig.15 Diagram of a heating unit carrier performing chamber cleaning.

[0158] The heating unit 500c performs cleaning on the inside of the cavity 420 while being coupled to the heating unit carrier 246b. When power is supplied to the heating unit 500 through the power supply 540 included in the heating unit 500c and the wire connected to the conveying unit 244, the heater 520c heats and cleans the inside of the cavity 420. In this case, the heating unit carrier 246b may be moved in the up-down direction and / or the left-right direction to perform cleaning.

[0159] Fig.18 is schematically shown in Fig.15 The heating unit carrier performs Figure 8 A diagram of the interior of the drying chamber in a case where the heating unit is in unloaded operation.

[0160] Reference Fig.18 , the heating unit carrier 246b is unloaded from the inside of the drying chamber 400 through the opening 415. The heating unit 500c is in a state of being coupled to the heating unit carrier 246b.

[0161] When the heating unit carrier 246b moves in the processing space 421 to perform the chamber cleaning operation S22, the heating unit carrier 246b can selectively clean a specific point inside the processing space 421. Further, the cleaning time of the specific point inside the processing space 421 can be adjusted to improve the efficiency of the chamber cleaning. In addition, in the present exemplary embodiment, the steps of the substrate carrier 246a loading and unloading the heating unit 500 into and from the buffer unit 220 are necessary, but in the modified example, the heating unit carrier 246b is coupled to the heating unit 500c, so the loading and unloading steps can be omitted.

[0162] In the above example, the heating unit is described as being used to clean the chamber. However, differently from this, cleaning can also be accomplished by providing a clean gas line to supply clean gas to the chamber and supplying heated gas to the processing space through the clean gas line.

[0163] It should be understood that what is disclosed herein is an exemplary embodiment, and other variations are possible. The individual elements or features of a particular exemplary embodiment are generally not limited to that particular exemplary embodiment, but are interchangeable, and even if not specifically illustrated or described, may be used for a selected exemplary embodiment where applicable. These modifications should not be considered as departing from the spirit and scope of the present invention, and all modifications obvious to a person of ordinary skill in the art are intended to be included within the scope of the appended claims.

Claims

1. A substrate processing device, comprising: a processing chamber, wherein the processing chamber is used to process a substrate; a conveying unit for loading the substrate into a processing space and unloading the substrate from the processing space, wherein the substrate is processed in the processing chamber; as well as a heating unit configured to be loaded into and unloaded from the processing space and used to clean the processing space by heating, Wherein, the processing chamber comprises: a cavity providing the processing space; and a supporting unit for supporting the substrate in the processing space; and a fluid supply unit for supplying a fluid for processing the substrate into the processing space, and The heating unit comprises: base; and A heater is mounted on the base.

2. The substrate processing apparatus according to claim 1, wherein: The base is provided in a shape that can be supported by the support unit.

3. The substrate processing apparatus according to claim 1, wherein: The chamber includes an upper body and a lower body, and the upper body and the lower body are combined with each other to provide the processing space. The supporting unit is configured to support the edge area of ​​the substrate on the upper body. a filling member, the filling member being arranged below the supporting unit and at a position opposite to the substrate supported on the supporting unit, a support pin disposed on a top surface of the filler, and The base portion is configured to be supported on the support pin.

4. The substrate processing apparatus according to claim 1, wherein: The transmission unit comprises: a hand and a substrate carrier, the hand supporting the substrate, the substrate carrier coupled to the hand and arranged to be movable forward and backward; and A heating unit carrier to which the heating unit is coupled and which is provided to be movable forward and backward.

5. The substrate processing apparatus according to claim 4, wherein: The heating unit carrier and the substrate carrier are disposed to be spaced apart in upward and downward directions.

6. The substrate processing apparatus according to claim 4, wherein: The number of the heaters is set to one or more, The base is coupled to the heating unit carrier, The base is formed with an opening penetrating the base in upward and downward directions, and The one or more heaters are positioned in the opening.

7. The substrate processing apparatus according to claim 2, further comprising: a controller, the controller being used to control the conveying unit and the heating unit, The controller controls the conveying unit and the heating unit so that the heating unit cleans the processing space in a state where the heating unit is supported on the supporting unit.

8. The substrate processing apparatus according to claim 3, further comprising: a controller, the controller being used to control the conveying unit and the heating unit, The controller controls the conveying unit and the heating unit so that the heating unit cleans the processing space in a state in which the heating unit is supported on the supporting pins.

9. The substrate processing apparatus according to claim 1, wherein: The heating unit is configured to be movable by the conveying unit, The substrate processing apparatus further includes a controller that controls the conveying unit and the heating unit, and The controller controls the conveying unit and the heating unit to clean the processing space in a state in which the heating unit is disposed in the conveying unit.

10. The substrate processing apparatus according to claim 9, wherein: The controller controls the conveying unit to change a position of the heating unit within the processing space in a case where the processing space is cleaned.

11. The substrate processing apparatus according to claim 9, wherein: The processing chamber comprises: a housing surrounding the cavity and forming an inlet through which a substrate is loaded; and a discharge unit for discharging the outer area of ​​the cavity in the housing, and The cavity comprises: an upper body and a lower body, the upper body and the lower body being combined with each other to provide the processing space; a driver for moving the upper body or the lower body so that the relative position between the upper body and the lower body changes, and The controller controls the driver so that the processing space is cleaned in a state in which the upper body and the lower body are spaced apart from each other and the cavity is opened.

12. The substrate processing apparatus according to claim 1, wherein: The heater is a light emitting unit that emits light.

13. A substrate processing method, the substrate processing method comprising: a substrate processing operation of loading a substrate into a processing space of a processing chamber and supplying a fluid into the processing space to process the substrate; as well as a chamber cleaning operation, the chamber cleaning operation unloading the substrate from the processing space and cleaning the processing space after the substrate processing operation, The chamber cleaning operation includes loading a heating unit into the processing space and heating the processing space with a heater disposed in the heating unit.

14. The substrate processing method according to claim 13, wherein: The chamber cleaning operation is an operation of removing organic matter remaining in the processing space by heating.

15. The substrate processing method according to claim 14, wherein: The fluid is a supercritical fluid, and In the substrate processing operation, a substrate to which an organic solvent has been applied is loaded, and the organic solvent is removed from the substrate by using a supercritical fluid.

16. The substrate processing method according to claim 13, wherein: The heater is a light emitting unit that emits light.

17. A substrate processing device, comprising: a processing chamber for removing an organic solvent remaining on the substrate from the substrate by using a supercritical fluid; a transfer unit for loading the substrate into a processing space and unloading the substrate from the processing space, wherein the substrate is processed in the processing chamber; as well as a heating unit configured to be loaded into and unloaded from the processing space and used to clean the processing space by heating, Wherein, the processing chamber comprises: a cavity, wherein the cavity provides the processing space; a supporting unit for supporting the substrate in the processing space; and a fluid supply unit for supplying the supercritical fluid to the processing space; and The cavity comprises: an upper body and a lower body, the upper body and the lower body being combined with each other to provide the processing space; a driver for moving the upper body or the lower body so that the relative position between the upper body and the lower body changes, and The heating unit comprises: base; and A heater is mounted on the base.

18. The substrate processing apparatus according to claim 17, further comprising: a controller, the controller being used to control the conveying unit and the heating unit, The controller controls the conveying unit and the heating unit so that the heating unit cleans the processing space in a state where the heating unit is supported on the supporting unit.

19. The substrate processing apparatus according to claim 17, further comprising: a controller, the controller being used to control the conveying unit and the heating unit, Wherein, the support unit is configured to support the edge area of ​​the substrate on the upper body. a filling member, the filling member being arranged below the supporting unit and at a position opposite to the substrate supported on the supporting unit, a support pin disposed on a top surface of the filler, and The controller controls the conveying unit and the heating unit to cause the heating unit to clean the processing space in a state in which the heating unit is supported on the supporting pins.

20. The substrate processing apparatus according to claim 17, wherein: The heater is a light emitting unit that emits light.

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