Substrate processing method and substrate processing apparatus

Abstract

The invention provides a substrate processing method and a substrate processing apparatus, which can improve the degree of freedom of adjustment of distribution of processing results in a substrate plane. A substrate processing method is performed in a substrate processing apparatus having a processing container and a heating unit capable of heating the inside of the processing container, the substrate processing method being performed in the substrate processing apparatus having the processing container and the heating unit capable of heating the inside of the processing container, the substrate processing method comprising: a step of predicting the inside of the processing container on the basis of a first prediction model; a setting unit that sets a specific interval having a temperature distribution in a substrate surface in which a required substrate processing result can be obtained, the first prediction model being used to predict a time change in the temperature distribution in the substrate surface that changes after the temperature is increased or decreased by the heating unit, and a second prediction model that is used to predict a time change in the temperature distribution in the substrate surface that changes after the temperature is increased or decreased by the heating unit; and b, processing the substrate in the specific section.

Description

Technical Field

[0001] The invention relates to a substrate processing method and a substrate processing device. Background Art

[0002] For example, Patent Document 1 proposes a scheme for controlling a heat treatment apparatus using a set temperature curve indicating the relationship between the passage of time and the set temperature. As the set temperature curve, a temperature curve is used which is defined such that the temperature distribution on the substrate surface during film formation includes both a central high temperature state in which the temperature near the center of the substrate is high and a peripheral high temperature state in which the temperature is high at the periphery of the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2002-43301 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology capable of increasing the degree of freedom in adjusting the distribution of processing results within a substrate surface.

[0008] Technical solutions for solving technical problems

[0009] According to one embodiment of the present invention, there is provided a substrate processing method, which is performed in a substrate processing device having a processing container and a heating unit, and is capable of sending a substrate into and out of the processing container, and the heating unit is capable of heating the inside of the processing container. The substrate processing method comprises: a step of setting a specific interval of temperature distribution within a substrate surface that can obtain a desired substrate processing result based on a first prediction model, wherein the first prediction model is used to predict the time change of the temperature distribution within the substrate surface that changes after the heating unit heats or cools the substrate; and b step of performing the substrate processing in the specific interval.

[0010] Effects of the Invention

[0011] According to one aspect, the degree of freedom in adjusting the distribution of the processing results within the substrate surface can be increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment.

[0013] Figure 2 This is a diagram showing an example of temperature control during conventional substrate processing.

[0014] Figure 3This is a diagram showing an example of a simulation result of the temperature distribution in the substrate surface after the start of the temperature increase.

[0015] Figure 4 This is a flowchart of an example of a substrate processing method according to an embodiment.

[0016] Figure 5 This is a diagram showing an example of experimental results of the temperature distribution in the substrate surface after the start of temperature increase according to one embodiment.

[0017] Figure 6 This is a diagram showing an example of experimental results of the temperature distribution in the substrate surface after the start of temperature increase according to one embodiment.

[0018] Figure 7 This is a diagram showing an example of film thickness distribution within a specific region and a substrate surface according to one embodiment.

[0019] Figure 8 This is a diagram showing an example of film thickness distribution within a specific region and a substrate surface according to one embodiment.

[0020] Description of Reference Numerals

[0021] 1. Substrate processing device

[0022] 4. Processing Container

[0023] 48 Crystal Boat

[0024] 60a~60g heater

[0025] 65a~65g temperature sensor

[0026] 100 control devices. DETAILED DESCRIPTION

[0027] Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0028] [Substrate processing device]

[0029] Reference Figure 1 , a structure of a substrate processing apparatus 1 which is an embodiment of a substrate processing method to be described later will be described. Figure 11 is a schematic cross-sectional view of an example of a substrate processing device 1 according to an embodiment. The substrate processing device 1 according to the present embodiment has a roughly cylindrical processing container 4 whose length direction is the vertical direction. The processing container 4 has a double tube structure, which includes an inner tube 6 which is a cylindrical body, and an outer tube 8 which has a top and is concentrically arranged outside the inner tube 6. However, the substrate processing device 1 may also be a single tube structure having a cylindrical body. The inner tube 6 and the outer tube 8 are formed of, for example, a heat-resistant material such as quartz. Inside the processing container 4, a plurality of substrates W are subjected to substrate processing such as film forming processing.

[0030] The lower ends of the inner tube 6 and the outer tube 8 are held by a manifold 10 formed of stainless steel or the like. The manifold 10 is fixed to a bottom plate (not shown), for example. In addition, the manifold 10 forms a part of the processing container 4 because it forms a substantially cylindrical internal space together with the inner tube 6 and the outer tube 8.

[0031] That is, the processing container 4 includes, for example: an inner tube 6 and an outer tube 8 formed of a heat-resistant material such as quartz; and a manifold 10 formed of stainless steel, etc., which is arranged at the lower side of the processing container 4 in a manner to hold the inner tube 6 and the outer tube 8 from below.

[0032] The manifold 10 has a gas introduction portion 20 for introducing a processing gas for substrate processing into the processing container 4. Figure 1 In the figure, a mode in which one gas introduction part 20 is provided is shown, but the present invention is not limited thereto, and a plurality of gas introduction parts 20 may be provided depending on the type of gas used and the like.

[0033] The gas introduction unit 20 is connected to an introduction pipe 22 for introducing the processing gas into the processing container 4. The introduction pipe 22 is provided with a flow rate regulator 24 such as a mass flow controller for regulating the gas flow rate, a valve (not shown), and the like.

[0034] The manifold 10 also includes a gas exhaust unit 30 for exhausting the processing container 4. The gas exhaust unit 30 is connected to an exhaust pipe 36 including a vacuum pump 32 capable of controlling the pressure reduction in the processing container 4, a variable opening valve 34, and the like.

[0035] A furnace port 40 is formed at the lower end of the manifold 10, and a disc-shaped cover 42 made of, for example, stainless steel is provided at the furnace port 40. The cover 42 is provided to be able to be raised and lowered by, for example, a lifting mechanism 44 that functions as a wafer storage box lifter, and is configured to seal the furnace port 40 airtightly.

[0036] A heat-insulating cylinder 46 made of, for example, quartz is provided on the cover 42. A wafer boat 48 made of, for example, quartz is placed on the heat-insulating cylinder 46, and the wafer boat 48 holds, for example, about 50 to 200 substrates W in a horizontal state in multiple layers at predetermined intervals. The multiple substrates W placed on the wafer boat 48 constitute a batch, and various substrate processes are performed in units of one batch. As an example of the substrate W, a wafer with a diameter of 200 mm to 300 mm can be cited. The wafer boat 48 is an example of a wafer storage box, which holds a plurality of substrates in a plurality of grooves arranged in multiple layers in the vertical direction, and is carried in and out of the processing container 4.

[0037] The wafer boat 48 is loaded (sent) into the processing container 4 by raising the cover 42 using the lifting mechanism 44, and substrate processing is performed on the substrate W held in the wafer boat 48. After the substrate processing is performed, the cover 42 is lowered using the lifting mechanism 44, and the wafer boat 48 is unloaded (sent out) from the processing container 4 to the loading area below.

[0038] A heater 60, for example, in a cylindrical shape, which can heat and control the processing container 4 to a predetermined temperature, is provided on the outer peripheral side of the processing container 4. The heater 60 is an example of a heating unit that heats the inside of the processing container 4. The heater 60 includes a plurality of heaters 60a to 60g, and the plurality of heaters 60a to 60g adjust the temperature of the plurality of substrates W accommodated in the processing container 4 in each of a plurality of regions.

[0039] The heaters 60a to 60g are arranged from the upper side to the lower side in the vertical direction. The heaters 60a to 60g are configured to be able to independently control the output values ​​(power, calorific value) of the heaters through the power controllers 62a to 62g, respectively. In addition, temperature sensors 65a to 65g are arranged inside the inner tube 6 corresponding to the heaters 60a to 60g. The temperature sensors 65a to 65g are arranged from the upper side to the lower side in the vertical direction. As the temperature sensors 65a to 65g, for example, thermocouples and temperature measuring resistors can be used. The temperature sensors 65a to 65g are also collectively referred to as temperature sensors 65.

[0040] Heaters 60a to 60g are provided in each area corresponding to each area when the substrate storage area of ​​the wafer boat 48 is divided into a plurality of areas. In the substrate processing apparatus 1, as an example, the wafer boat 48 is divided into seven areas. The seven areas are referred to as "BTM", "CTR-1", "CTR-2", "CTR-3", "CTR-4", "CTR-5", and "TOP" in order from the bottom.

[0041] The heater 60a heats the multiple substrates in the "TOP" area. The temperature sensor 65a measures the temperature of the "TOP" area in the inner cylinder 6. Hereinafter, the temperature of each area in the inner cylinder 6 is also referred to as the temperature of the area. The heater 60b heats the multiple substrates in the "CTR-5" area. The temperature sensor 65b measures the temperature of the "CTR-5" area. The heater 60c heats the multiple substrates in the "CTR-4" area. The temperature sensor 65c measures the temperature of the "CTR-4" area. The heater 60d heats the multiple substrates in the "CTR-3" area. The temperature sensor 65d measures the temperature of the "CTR-3" area. The heater 60e heats the multiple substrates in the "CTR-2" area. The temperature sensor 65e measures the temperature of the "CTR-2" area. The heater 60f heats the multiple substrates in the "CTR-1" area. The temperature sensor 65f measures the temperature of the "CTR-1" area. The heater 60g heats the multiple substrates in the "BTM" area. Temperature sensor 65g measures the temperature of the "BTM" area.

[0042] The control device 100 controls the overall operation of the substrate processing apparatus 1. The control device 100 includes a CPU 101 and a memory 102. The CPU 101 is a computer for controlling the overall operation of the substrate processing apparatus 1.

[0043] The memory 102 stores: a control program for realizing the substrate processing performed by the substrate processing device 1 under the control of the control device 100, and a processing scheme in which the substrate processing order is set in each step. In addition, the memory 102 stores various programs for making each part of the substrate processing device 1 perform substrate processing according to the processing conditions set in the processing scheme. Various programs can be stored in a storage medium and can be stored in the memory 102. The storage medium can be a hard disk, a semiconductor memory, or a portable medium such as a CD-ROM, a DVD, a flash memory, etc. In addition, these programs, parameters, and various data can also be appropriately transmitted from other devices or a host computer to the memory 102 through communication methods such as wired or wireless. In addition, the control device 100 can also be a control device set separately from the substrate processing device 1. In addition, the memory 102 can also be a storage device set separately from the substrate processing device 1.

[0044] The detection signals from the temperature sensors 65a to 65g are sent to the control device 100. In the control device 100, the setting values ​​of the power (electric power) controllers 62a to 62g are calculated based on the detection signals from the temperature sensors 65a to 65g, and the calculated setting values ​​are output to each power controller 62a to 62g. Thus, the output values ​​(Power) of the heaters 60a to 60g are controlled independently.

[0045] [Conventional temperature control]

[0046] In a substrate processing apparatus 1 that processes substrates in batches, there is a problem that the distribution of substrate processing results (e.g., film thickness distribution) within the substrate surface is uneven due to the flow of raw material gas and the fine structure on the substrate. For this purpose, a technology called TVS (Time-Varying Setpoint) has been used.

[0047] When the gas flow rate supplied to the processing container 4 and the pressure in the processing container 4 are equal, the temperature is the dominant factor that determines the film formation rate. In TVS, the phenomenon of temperature difference in the substrate surface during heating or cooling is used to form a film during heating or cooling in order to make the film thickness distribution in the substrate surface uniform. In addition, the technology for obtaining the best heating and cooling conditions based on the film thickness distribution measured in advance is also called TVS. In TVS, a statistical model for predicting the temperature of the center and end (peripheral portion) of the substrate is used to obtain the ramp rate (ramping rate) (speed of heating or cooling) and film formation time that make the film thickness in the substrate surface uniform.

[0048] Figure 2 (a) shows an example of setting the control temperature before film thickness adjustment based on TVS, where T n ~T n+1 In the interval, the film forming process is performed while controlling the heater 60 so as to reach a certain control temperature shown on the vertical axis. Figure 2 (b) shows the film thickness distribution in the wafer surface. The vertical axis film thickness distribution relative to the radial position of the wafer with a diameter of 300 mm shown on the horizontal axis is shown. 0 on the horizontal axis represents the center of the wafer, 150 mm and -150 mm represent the extreme ends of the wafer, and the film thickness distribution in the wafer surface is thick at the periphery of the wafer slightly inside the extreme ends of the wafer, and becomes thinner in the center.

[0049] In this way, in order to avoid the film thickness distribution in the radial direction of the wafer surface from forming an M shape due to the uneven flow of gas, etc., Figure 2 In (c), TVS technology is used to adjust the film thickness. Figure 2 (c) T n ~T n+1 In the interval of , the heater 60 is controlled to cool down at a certain speed to perform film forming. Thus, while the temperature of the center of the wafer is kept high, the ends of the wafer are cooled, so that the film forming speed in the center of the wafer is higher than the film forming speed at the ends, such as Figure 2 As shown in (d), the in-plane uniformity of the film thickness from the center to the end of the wafer can be improved.

[0050] However, although the uniformity of the film thickness distribution within the wafer surface is improved, the objects to be adjusted are the film thickness at the center and the film thickness at the ends. Figure 2 (b) The film thickness distribution is like the M shape. Even if TVS technology is used, Figure 2 As shown in (d), there may remain portions where the in-plane uniformity of the film thickness cannot be adjusted, such as a slightly thicker film thickness at the end portion.

[0051] That is, in the conventional TVS, film formation starts at a certain time after the temperature is raised and lowered by the heater 60. Therefore, the shapes of the temperature distribution in the center, the end, and the middle between the center and the end in the wafer surface become similar curves regardless of the time elapsed from the start of the temperature rise and fall, and the degree of freedom for adjustment is only two degrees of freedom, namely, the slope and the intercept (intercept) of the straight line approximating the curve. Therefore, the degree of freedom for adjusting the film thickness distribution of the wafer is also only two degrees of freedom, and when the shape of the complex film thickness distribution is adjusted to make the film thickness distribution in the wafer surface uniform, parts that cannot be made uniform will occur.

[0052] Figure 3 (a) and (b) show an example of simulation results of the temperature distribution in the substrate surface after the start of the temperature rise in the processing container 4. The start of the temperature rise is set to 0.0 seconds, Figure 3 (a) shows an example of the result of simulating the temperature distribution at the radial position in the wafer surface from 0.0 second to 40.0 second (immediately after the start of heating) at every 5 seconds of the elapsed time from the start of heating. Figure 3 (b) shows an example of the result of simulating the temperature distribution at the radial position in the chip surface from 45.0 seconds to 95.0 seconds after the start of heating (after a certain period of time has passed since the start of heating) at every 5 seconds. Figure 3 The left end of the horizontal axis of (a) and (b) is the center of the chip, the right end is the end of the chip, and the middle is the middle in the radial direction from the center of the chip to the end of the chip.

[0053] In conventional TVS, film formation begins after a certain period of time has passed since the temperature rise and fall. Figure 3 As shown in (b), the temperature distribution (curve shape) in the wafer surface at any of the elapsed times (45.0 seconds to 95.0 seconds) from the start of the temperature rise is similar to each other, so the degree of freedom in adjusting the film thickness distribution is low.

[0054] In contrast, Figure 3As shown in (a), when film formation is performed in the interval of 0.0 seconds to 10.0 seconds from the start of heating, there is almost no temperature difference between the center of the wafer and the middle of the radial direction. On the other hand, when film formation is performed in the interval of 15.0 seconds to 40.0 seconds from the start of heating, temperature differences are generated in the center of the wafer, the middle of the radial direction, and the end of the wafer. That is, after the start of heating, the temperature distribution (the shape of the curve) in the wafer surface varies a lot, so the degree of freedom of adjusting the film thickness distribution becomes higher. Heat is transferred by heat conduction in the wafer surface, so various temperature patterns appear according to time after the start of heating and cooling.

[0055] Therefore, in the conventional temperature control using TVS technology, film formation is performed using the interval in which the in-plane temperature difference begins to stabilize, whereas in the substrate processing method of this embodiment, film formation is performed also using the interval of complex temperature distribution immediately after the start of temperature rise and fall.

[0056] Thus, it is possible to form a film with a film thickness distribution corresponding to a richly variable temperature distribution, and it is possible to adjust the film thickness distribution with more than three degrees of freedom. That is, it is possible to adjust the temperature control conditions including the interval immediately after the temperature is raised or lowered. Thus, it is possible to form a film thickness distribution with a target that has not been made so far. Therefore, it is possible to adjust a complex in-plane distribution that has not been adjusted so far, and it is possible to achieve an improvement in the in-plane uniformity of the film thickness distribution.

[0057] [Prediction Model]

[0058] In the substrate processing method of this embodiment, a specific interval having a temperature distribution in the substrate surface that can obtain a desired substrate processing result is set based on a first prediction model, wherein the first prediction model is a model for predicting the temporal change of the temperature distribution in the substrate surface that changes after the temperature is increased or decreased by the heater 60. Then, the substrate processing is performed in the specific interval after the temperature is increased or decreased by the heater 60.

[0059] The first prediction model may also be predefined based on the result of detecting the temperature in the substrate surface that has changed after the temperature is increased or decreased by the heater 60 by the temperature sensor 65. The first prediction model may also be derived based on a physical model made based on an equation representing the physical law of the phenomenon such as the heat conduction equation. The first prediction model is a model that predicts the temperature in the substrate surface based on a temperature setting curve.

[0060] The second prediction model predicts the result of substrate processing based on the temperature distribution within the substrate surface when the substrate processing is performed under the specified processing conditions. In the substrate processing method of this embodiment, the result of substrate processing performed under the specified processing conditions is predicted based on the second prediction model so that the temperature distribution within the substrate surface becomes the distribution within the substrate surface required.

[0061] [Substrate processing method]

[0062] Reference Figures 4 to 6 An example of a substrate processing method according to this embodiment will be described. Figure 4 This is a flowchart showing an example of a substrate processing method according to one embodiment. Figure 5 and Figure 6 FIG. 1 is a diagram showing an example of experimental results of the temperature distribution in the substrate surface after the start of temperature rise according to one embodiment. Figure 4 In the embodiment of the present invention, a film forming process is taken as an example of a substrate processing. The substrate processing method is controlled by a control device 100 and executed by a substrate processing device 1.

[0063] In step S1 , the control device 100 acquires processing conditions from a processing recipe used in a film forming process.

[0064] In step S2 , the control device 100 uses the second prediction model to predict a temperature distribution in the substrate surface such that a required film thickness distribution in the substrate surface is achieved as a result of the film forming process based on the acquired process conditions.

[0065] In step S3 , the control device 100 uses the first prediction model to set the section having the temperature distribution in the substrate surface predicted in step S2 as a specific section.

[0066] In step S4 , the control device 100 executes the film forming process in a specific period after the heater 60 starts the temperature increase or temperature decrease control, and ends the present process.

[0067] Figure 5 and Figure 6 The left figure shows that 7 measurement points are set in the diameter direction within the surface of the substrate W (refer to the measurement points P1 to P7 in the substrate W), and the time variation of the measurement results of the temperature of the substrate at the measurement points after the wafer boat 48 is loaded (sent) into the processing container 4. Figure 5 and Figure 6 The left figure of is the same graph, and the first prediction model is defined based on the time change of the measurement result of the temperature of the substrate at the measurement point.

[0068] Curve E in the graph shows the time variation of the average value (P1+P7) / 2 of the measured temperature of P1 and P7 at the ends of the substrate among the seven measuring points in the radial direction of the substrate W. Curve ME shows the time variation of the average value (P2+P6) / 2 of the measured temperature of P2 and P6 in the middle (outer side in the radial direction). Curve MC shows the time variation of the average value (P3+P5) / 2 of the measured temperature of P3 and P5 in the middle (inner side in the radial direction). Curve C shows the time variation of the measured temperature of P4 in the center of the substrate.

[0069] Figure 5 and Figure 6 The enlarged graph of is obtained by enlarging the area surrounded by the dotted line in the left graph. Figure 5 and Figure 6 When the horizontal axis of the left graph is 0 seconds, the loading of the wafer boat 48 into the processing container 4 is completed, and then the heater 60 is heated according to the temperature increase instruction in one step of the processing plan, and the temperature in the processing container 4 increases.

[0070] In the Figure 5 The enlarged graph shows T n ~T n+1 When the interval is set as the specific interval of step S3, when using the TVS technology that starts film formation after a period of time from the start of temperature rise, the temperature difference in the substrate surface will not change significantly. Therefore, the degree of freedom in adjusting the film thickness distribution is low, and it is impossible to adjust with high degree of freedom such as increasing the film only at the end, increasing the film only in the middle, and increasing the film only in the center.

[0071] exist Figure 5 In the case of temperature distribution, curve C has the highest temperature, followed by curve MC, curve ME, and curve E in this order. Therefore, the film thickness distribution can be adjusted so that the film thickness is thickest in the center, and the film thickness becomes thinner in the order of middle (inside), middle (outside), and end.

[0072] On the other hand, in the Figure 6 The dotted line encloses the temperature immediately after the start of the temperature rise when the temperature switches from rising to falling. Figure 6 The enlarged graph shows T n ~T n+1 When the interval is set as the specific interval of step S3, the temperature difference in the substrate surface changes greatly while shifting. As a result, the film thickness distribution can be adjusted with high freedom, and it is possible to adjust only the end portion, only the middle portion, or only the center portion.

[0073] For example, in Figure 6 T n ~T n+1 In the interval, the temperature in the middle (curve ME, curve MC) is higher than the curve C in the center and the curve E at the end, so the film thickness distribution can be adjusted to be thick in the middle and thin in the center and the end. In addition, when the interval where the curve E at the end is high is set as a specific interval, when the film forming process is performed in the specific interval, the film can be increased only at the end.

[0074] As described above, the specific interval is set based on the first prediction model so as to obtain a temperature distribution within the substrate surface, and the temperature distribution within the substrate surface makes the film thickness distribution within the substrate surface required as a result of the film forming process based on the process conditions. Then, the film forming process is performed in the specific interval.

[0075] By setting a specific interval from the time period after the temperature is increased or decreased by the heater 60 and before the temperature difference in the substrate surface changes stably, the degree of freedom in adjusting the film thickness distribution can be increased.

[0076] [Simulation results of film thickness distribution adjustment]

[0077] based on Figure 7 and Figure 8 , the simulation results of film thickness distribution adjustment are explained. Figure 7 and Figure 8 This is a diagram showing an example of film thickness distribution within a specific region and a substrate surface according to one embodiment.

[0078] (Simulation 1)

[0079] exist Figure 7 In the example shown in (a), after a period of time (e.g., several tens of seconds) from the start of the temperature increase control by the heater 60, the temperature difference in the substrate surface stabilizes in a specific interval T during the temperature increase. n ~Tn +1 Therefore, in the interval T n ~T n+1 In the process, the temperature is controlled to be high in the order of the edge, middle, and center of the substrate. Figure 7 As shown in (b), the end portion becomes a thick film and the center becomes a thin film, forming a concave film thickness distribution. When the film thickness distribution becomes convex (mountain-shaped) under the condition that the controlled temperature in the film forming process is constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control.

[0080] (Simulation 2)

[0081] exist Figure 7 In the example shown in (c), after the temperature increase control by the heater 60 is started, the time interval T from the temperature increase to the temperature decrease is switched. n ~T n+1 Therefore, in the interval T n ~T n+1 In the embodiment, the temperature in the middle of the substrate is controlled to be higher than that at the ends and the center. Figure 7As shown in (d), the film becomes thick in the middle and thin at the ends and the center, forming an M-shaped film thickness distribution. When the film thickness distribution becomes W-shaped when the controlled temperature during film formation is constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control. In addition, in order to increase the film thickness, it is necessary to form Figure 7 The interval T shown in (c) n ~T n+1 The pattern of temperature distribution recurs over and over again.

[0082] Figure 7 The temperature control shown in (a) is performed using TVS technology. Figure 7 The temperature control shown in (c) is performed using the substrate processing method of this embodiment. According to the substrate processing method of this embodiment, by performing film forming processing using the temperature distribution of the switching timing (timing) of temperature rise and fall, a complex film forming distribution such as an M shape can be generated. In the above, it is described in a manner that the substrate processing method of this embodiment does not include the TVS technology, but the substrate processing method of this embodiment may also include temperature control using the TVS technology, and perform temperature control by combining with the TVS.

[0083] (Simulation 3)

[0084] exist Figure 8 In the example shown in (a-1), after a period of time (e.g., several tens of seconds) from the start of the temperature reduction control by the heater 60, the temperature difference in the substrate surface stabilizes in a specific interval T during the temperature reduction. n ~T n+1 Film forming process is performed. n ~T n+1 In the process, the temperature is controlled to be high in the center, middle, and end of the substrate in this order. Figure 8 As shown in (a-2), the film becomes thick in the center and thin at the ends, forming a convex film thickness distribution. When the film thickness distribution is concave when the controlled temperature during film formation is constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control.

[0085] Figure 8 The temperature control of (c-1) and Figure 7 The temperature control of (a) is the same as that of Figure 8 The film thickness distribution of (c-2) and Figure 7 The film thickness distribution of (b) is the same. Figure 8 The film thickness distribution of (a-2) is such that Figure 8 The film thickness distribution of (c-2) is reversed.

[0086] (Simulation 4)

[0087] exist Figure 8 In the example shown in (b-1), the time after the start of the temperature drop control by the heater 60 is set as the specific interval T n ~T n+1 , in the interval T n ~T n+1 Film forming process is performed. n ~T n+1 In the control, the temperature is controlled in the order of the center, middle, and end of the substrate. In addition, the temperature difference between the center, middle, and end of the substrate is not constant, the end of the cooling speed is the fastest, and the center of the cooling speed is the slowest. Therefore, if Figure 8 As shown in (b-2), the film becomes thick in the center and thin at the ends, forming a U-shaped film thickness distribution. When the film thickness distribution becomes an inverted U shape when the controlled temperature during film formation is constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control. In addition, in order to increase the film thickness, it is necessary to form Figure 8 The interval T shown in (b-1) n ~T n+1 The pattern of temperature distribution recurs over and over again.

[0088] (Simulation 5)

[0089] exist Figure 8 In the example shown in (d-1), the time after the start of the temperature rise control by the heater 60 is set as the specific interval T n ~T n+1 , in the interval T n ~T n+1 Film forming process is performed. n ~T n+1 In the control, the temperature is controlled in the order of the end, middle, and center of the substrate. In addition, the temperature difference between the end, middle, and center of the substrate is not constant. The temperature rise rate at the end is the fastest, and the temperature rise rate at the center is the slowest. Therefore, if Figure 8 As shown in (d-2), the end portion becomes a thick film and the center becomes a thin film, forming an inverted U-shaped film thickness distribution. When the film thickness distribution becomes a U-shaped when the controlled temperature during film formation is constant, the uniformity of the film thickness distribution within the substrate surface can be improved by performing this temperature control. In addition, in order to increase the film thickness, it is necessary to form Figure 8 The interval T shown in (d-1) n ~T n+1 The pattern of temperature distribution recurs over and over again.

[0090] [Region Control]

[0091] In the substrate processing device 1, each region may have a different film thickness distribution. Therefore, the temperature control in the substrate processing method of the present embodiment can be performed for each region. In this case, the first prediction model predicts, for each region, the time change of the temperature distribution in the substrate surface that changes after the heater 60 heats or cools down the plurality of grooves of the wafer boat 48 into a plurality of regions. The control device 100 may also set, for each region, a specific interval of the temperature distribution in the substrate surface that can obtain the desired substrate processing result based on the first prediction model.

[0092] As described above, according to the substrate processing method and substrate processing apparatus of the present embodiment, it is possible to increase the degree of freedom in adjusting the distribution of the processing result within the substrate surface.

[0093] According to the present substrate processing method, the temperature distribution of the substrate just after the substrate temperature has been cooled down or just after the substrate temperature has been heated up is set to a specific interval, and the film forming process is performed in the specific interval. As a result, complex film thickness distributions such as U-shaped and W-shaped ones that cannot be fully adjusted using the previous TVS technology can be made close to a uniform distribution, and the in-plane uniformity of substrate processing such as film forming processing can be improved. For example, depending on the processing conditions, the film thickness distribution in the diameter direction sometimes becomes convex, concave, W-shaped, M-shaped, etc. However, according to the substrate processing method of this embodiment, by performing film forming with a film thickness distribution in a direction that eliminates these film thickness distributions, the film thickness distribution can be made close to a uniform distribution.

[0094] For example, the processing conditions for substrate processing are acquired, and film forming processing is performed under the acquired processing conditions. In this case, the result of the substrate prediction processing performed under the acquired processing conditions is predicted based on the second prediction model, wherein the second prediction model predicts the result of the substrate processing based on the temperature distribution within the substrate surface when the substrate processing is performed under the specified processing conditions. Then, the temperature distribution within the substrate surface that can eliminate the predicted result of the substrate processing is predicted. Next, based on the first prediction model, the interval with the predicted temperature distribution within the substrate surface is set as a specific interval, and the substrate processing is performed based on the processing conditions in the specific interval. Thus, by performing film forming with a film thickness distribution that eliminates the direction of the film thickness distribution when the control temperature is constant during normal film forming, the film thickness distribution can be made close to a uniform distribution.

[0095] Thus, film formation can be performed with a film thickness distribution corresponding to the temperature distribution in a specific range, and the film thickness distribution can be adjusted with more than three degrees of freedom. In addition, in order to obtain the ramp rate (the speed of temperature increase and decrease) and the range for film formation, it is necessary to be able to predict the temperature distribution in the substrate surface after the temperature increase and decrease just starts using a first prediction model such as a simulation model, a calculation formula, or an experimental model.

[0096] The substrate processing method and substrate processing device of the embodiments of this specification should be considered to be illustrative in all aspects and not restrictive. The embodiments can be deformed and improved in various ways without departing from the content of the invention and its main purpose. The matters recorded in the above-mentioned multiple embodiments can also adopt other structures within the scope of non-contradiction, and can be combined within the scope of non-contradiction.

[0097] In the above-mentioned embodiment, it is described that the substrate processing apparatus of this embodiment is a batch film forming apparatus that processes a plurality of substrates at a time, but the present invention is not limited to this. The substrate processing apparatus of this embodiment may also be a single-wafer film forming apparatus that processes wafers one by one. In addition, the substrate processing apparatus may also be a semi-batch film forming apparatus that uses a rotating table to make a plurality of wafers arranged on a rotating table in a processing container revolve, so that the plurality of wafers sequentially pass through an area supplied with a first gas and an area supplied with a second gas to process the wafers. In addition, the substrate processing apparatus may also be a plurality of single-wafer film forming apparatuses in which a plurality of mounting tables are arranged in one processing container.

Claims

1. A substrate processing method, characterized in that: The substrate processing method is performed in a substrate processing device. The substrate processing device comprises: a processing container, and substrates can be sent into and out of the processing container; and a heating unit capable of heating the inside of the processing container, The substrate processing method comprises: a step of setting a specific interval of temperature distribution within the substrate surface that can obtain a desired substrate processing result based on a first prediction model, wherein the first prediction model is used to predict the time change of the temperature distribution within the substrate surface that changes after the heating unit increases or decreases the temperature; and Step b: performing the substrate processing in the specific interval.

2. The substrate processing method according to claim 1, wherein: The substrate processing device includes a wafer boat, which holds a plurality of the substrates in a plurality of grooves arranged in multiple layers in a vertical direction and can be carried into and out of the processing container. The first prediction model is used to predict the time change of the temperature distribution in the substrate surface of each area which changes after the heating unit raises or lowers the temperature when the plurality of grooves are divided into a plurality of areas. In the step a, the specific interval having the temperature distribution within the substrate surface capable of obtaining the required substrate processing result is set for each region based on the first prediction model.

3. The substrate processing method according to claim 1, characterized in that: include: Step c, obtaining processing conditions for performing the substrate processing; and Step d, predicting the result of substrate processing performed under the acquired processing conditions based on a second prediction model, and predicting the temperature distribution within the substrate surface that can eliminate the predicted substrate processing result, wherein the second prediction model is used to predict the substrate processing result based on the temperature distribution within the substrate surface when the substrate processing is performed under the prescribed processing conditions, In the step a, based on the first prediction model, a section having the predicted temperature distribution in the substrate surface is set as the specific section. In the step b, the substrate is processed in the specific interval based on the processing conditions.

4. The substrate processing method according to any one of claims 1 to 3, characterized in that: In the step a, the specific interval is set, which is a time period after the heating unit raises or lowers the temperature and before the temperature difference at the center, middle and end of the substrate surface in the radial direction stably changes.

5. The substrate processing method according to any one of claims 1 to 3, characterized in that: The substrate processing device has a plurality of temperature sensors arranged in a diameter direction of the substrate. The first prediction model is defined in advance based on the results of the temperature in the substrate surface changed by the temperature increase or decrease by the heating unit detected by the plurality of temperature sensors provided.

6. The substrate processing method according to claim 3, wherein: The substrate processing is a film forming process, In the step a, the specific interval is set based on the first prediction model so as to obtain a temperature distribution within the substrate surface, and the temperature distribution within the substrate surface is such that the result of the film forming process based on the process conditions for performing the substrate process is a required film thickness distribution within the substrate surface, In the step b, the film forming process is performed in the specific section after the temperature is increased or decreased by the heating unit.

7. The substrate processing method according to claim 2, characterized in that: The first prediction model is defined in advance based on the result of detecting the temperature in the substrate surface of each region that has changed after the temperature has been increased or decreased by the heating unit by a plurality of temperature sensors provided for each of the regions.

8. A substrate processing device, characterized in that: include: a processing container capable of transferring substrates into and out of the processing container; a heating unit capable of heating the inside of the processing container; and A control device, wherein The control device performs control so as to execute: a step of setting a specific interval of temperature distribution within the substrate surface that can obtain a desired substrate processing result based on a first prediction model, wherein the first prediction model is used to predict the time change of the temperature distribution within the substrate surface that changes after the heating unit increases or decreases the temperature; and Step b: performing the substrate processing in the specific interval.

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