Functional layer patterning method and application thereof

Abstract

The invention discloses a functional layer patterning method and application thereof. The method comprises the steps that a patterned photoresist layer is formed on the surface of a substrate, the photoresist layer is provided with an isolation groove, the isolation groove discontinuously surrounds a target pattern and is provided with a plurality of bridging structures extending in the radial direction, and the bridging structures are connected with the portions, located on the inner side and the outer side of the isolation groove, of the photoresist layer; depositing to form a functional layer; and carrying out stripping treatment on the photoresist layer, so that the photoresist layer and a part of the functional layer attached to the surface of the photoresist layer are separated from the substrate, and the other part of the functional layer with the target pattern is reserved. According to the method, the graphical area is peripherally surrounded by the discontinuous isolation grooves, so that stress generated in the functional layer deposition process is blocked, the phenomenon of film layer drift in the grooves caused by complete surrounding slotting is avoided, and functional layer deposition and patterning without cracks, wrinkles and drift can be realized on the graphical photoresist.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano processing technology, and in particular to a functional layer graphic method and application thereof. Background Art

[0002] Functional layer patterning is a common processing technology in the chip preparation process, which is mainly used to form a patterned dielectric film or metal film, or a dielectric and metal multilayer composite film. There are usually two methods for functional layer patterning. One is to selectively remove the functional layer in some areas by etching after depositing the functional layer to achieve the patterning of the functional layer; the other is to first obtain a patterned photoresist on the photoresist through exposure and development, and then deposit a functional layer on the patterned photoresist and peel it off to remove the photoresist and the functional layer on the photoresist, thereby achieving the patterning of the functional layer.

[0003] The latter is widely used because it does not require high-cost dry etching or wet etching processes with the risk of side etching. However, the inventors found in practice that depositing a functional layer on a photoresist faces stress problems, which can cause the functional layer to crack, wrinkle, or even fall off in severe cases, significantly reducing the yield and quality of the patterned structure. Summary of the invention

[0004] In view of the deficiencies of the prior art, an object of the present invention is to provide a functional layer patterning method and application thereof.

[0005] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention includes:

[0006] In a first aspect, the present invention provides a functional layer patterning method, comprising:

[0007] A patterned photoresist layer is formed on the surface of the substrate, wherein the photoresist layer is provided with an isolation groove, wherein the isolation groove discontinuously surrounds the target pattern and has a plurality of radially extending bridge structures, wherein the bridge structures connect the photoresist layers inside and outside the isolation groove;

[0008] Depositing a functional layer on the surface of the photoresist layer and on the surface of the substrate in the exposed area of ​​the photoresist layer, wherein the functional layer includes a dielectric film and / or a metal film;

[0009] The photoresist layer is stripped to separate the photoresist layer and a part of the functional layer attached to the surface of the photoresist layer from the substrate, and another part of the functional layer having the target pattern is retained.

[0010] In a second aspect, the present invention also provides an application of the above-mentioned functional layer patterning method in the preparation of micro-nano array devices.

[0011] Based on the above technical solution, compared with the prior art, the beneficial effects of the present invention at least include:

[0012] The functional layer patterning method provided by the present invention utilizes discontinuous isolation grooves to circumferentially surround the patterning area, thereby blocking the stress generated during the functional layer deposition process and avoiding problems such as cracking, wrinkling, and even falling off in the patterning area; at the same time, the ungrooved discontinuous parts in the isolation grooves serve as bridging structures, which have a positioning and restraining effect on the patterning area, avoiding the phenomenon of film layer drift in the grooves caused by completely surrounding the grooves, and can achieve crack-free, wrinkle-free, and drift-free functional layer deposition and patterning on the patterned photoresist, which has significant application value in the field of micro-nano processing of devices.

[0013] The above description is only an overview of the technical solution of the present invention. In order to enable those skilled in the art to more clearly understand the technical means of the present application and implement them according to the contents of the specification, the following is a description of the preferred embodiments of the present invention in conjunction with detailed drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of a specific process of a functional layer graphic method provided by the background technology of the present invention;

[0015] Figure 2a This is a microscope photo of a typical comparative case of the present invention after a 100 nm thick TiO2 film is directly deposited on a quartz substrate;

[0016] Figure 2b This is a microscope photograph of a typical comparative case of the present invention, in which a 1.4 μm thick AZ5214 photoresist is coated on a quartz substrate and a 100 nm thick TiO2 film is deposited;

[0017] Figure 3a is a microscope photograph of a target pattern after development provided by a typical control case of the present invention;

[0018] Figure 3b It is a microscope photograph of cracks appearing after a functional layer is deposited on a developed photoresist pattern provided by a typical comparative case of the present invention;

[0019] Figure 3c This is a SEM photograph of a crack that appeared after a functional layer was deposited on a developed photoresist pattern, provided in a typical comparative case of the present invention;

[0020] Figure 3d This is a SEM photo of a target pattern obtained after peeling treatment provided by a typical control case of the present invention;

[0021] Figure 4a It is a schematic diagram of the shapes of various continuously surrounded isolation grooves provided by another typical comparative example of the present invention;

[0022] Figure 4b It is a schematic diagram of the shapes of various discontinuously surrounded isolation grooves provided in a typical implementation case of the present invention;

[0023] Figure 5a This is a microscope photo of cracks appearing after thin film deposition on a pattern without isolation grooves provided by a typical comparative case of the present invention;

[0024] Figure 5b is a microscope photograph of cracks appearing after thin film deposition on a continuously surrounded isolation groove pattern provided by another typical embodiment of the present invention;

[0025] Figure 5c This is a microscope photograph of another typical embodiment of the present invention showing a pattern drift phenomenon after thin film deposition on a continuously surrounded isolation groove pattern;

[0026] Figure 5d This is a microscope photograph of cracks appearing on an isolation groove pattern with a bridge structure after thin film deposition provided by a typical implementation case of the present invention;

[0027] Figure 5e It is a SEM photograph of a target pattern after peeling off the isolation groove pattern with a connecting bridge provided in a typical implementation case of the present invention.

[0028] Explanation of reference numerals: 11, substrate; 22, photoresist layer; 22-1, photoresist pattern; 33, functional layer; 33-1, target pattern. DETAILED DESCRIPTION

[0029] Some prior arts use the functional layer patterning method mentioned in the background art above to prepare the patterned functional layer. For details, see Figure 1 As shown, the general process flow is: first, a photoresist layer 22 is coated on the substrate 11, and then a patterned photoresist pattern 22-1 is formed through photolithography and development steps, and then a functional layer 33 is deposited on the photoresist pattern 22-1, and finally the photoresist pattern 22-1 and part of the functional layer 33 on the photoresist are stripped in an organic reagent to obtain a target pattern 33-1 composed of the remaining functional layer.

[0030] In the above process steps, the functional layer 33 is generally deposited by processes such as electron beam evaporation, thermal evaporation or magnetron sputtering, and these processes usually generate a lot of heat, causing the temperature of the sample to rise. Since there are differences in the thermal expansion coefficients of the functional layer 33, the photoresist layer 22 and the substrate 11, the temperature change during the deposition of the functional layer 33 will produce a large stress. In addition, it is not only a thermal expansion problem, but also due to the difference in density between different film layer materials, stress will be generated. Under the action of multiple stresses, the functional layer 33 and the photoresist layer 22 will crack, wrinkle, or even fall off. These defects will appear in the area where the target pattern 33-1 is located, which will have a serious impact on the preparation of the target pattern 33-1.

[0031] Specifically, the inventors of the present invention observed during the preparation of the array dielectric structure that Figure 2a As shown in the optical microscope photo of a 100nm thick TiO2 film deposited on a quartz substrate by electron beam evaporation, it can be seen that the film is uniform and has no cracks; however, when a photoresist layer is sandwiched between the dielectric film and the substrate, Figure 2b As shown in the optical microscope photograph after coating 1.4μm thick AZ5214 photoresist on the quartz substrate and then depositing 100nm thick TiO2 film using the same electron beam evaporation process, a large number of cracks can be seen. This is because the stress generated by temperature changes between the TiO2 medium and the photoresist layer causes film damage.

[0032] In the above process, a large number of cracks have been generated before the pattern structure is made. In the technical solution for making the pattern structure, for example Figure 3a The optical microscope photo of quartz substrate coated with 810nm thick PMMA electron beam photoresist after exposure and development shows a regular square array. Figure 3b Shown in Figure 3a The scanning electron beam microscope photo of a 100nm thick TiO2 film deposited on the electron beam photoresist square pattern shown in the figure shows that the stress between the electron beam deposited TiO2 and the photoresist due to temperature changes causes the square array to crack and wrinkle. The corresponding electron microscope image is shown in Figure 3c As shown; Figure 3d Shows the Figure 3b The scanning electron beam microscope photograph of the sample after peeling shows that the film layer of most of the blocks in the block array has fallen off, shifted and been damaged.

[0033] Not only does the dielectric film and the photoresist layer have stress problems, but metal films also have similar problems. However, because metal films are ductile, they generally do not cause cracks, but wrinkles will occur. For example, the deposition of certain high-melting-point metals requires a high beam current, which will cause high temperatures and lead to wrinkles. For multi-layer functional layers composed of dielectric films and metal films, the adverse phenomena caused by the above stress will be more prominent.

[0034] In view of the deficiencies in the prior art, the inventor of this case has proposed the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.

[0035] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited to the specific embodiments disclosed below.

[0036] Moreover, relational terms such as “first” and “second” are merely used to distinguish one component or method step from another with the same name, but do not necessarily require or imply any such actual relationship or order between these components or method steps.

[0037] An embodiment of the present invention provides a functional layer graphics method, which includes the following steps:

[0038] A patterned photoresist layer is formed on the surface of the substrate, wherein the photoresist layer is provided with an isolation groove, wherein the isolation groove discontinuously surrounds the target pattern and has a plurality of radially extending bridge structures, wherein the bridge structures connect the photoresist layers inside and outside the isolation groove;

[0039] Depositing a functional layer on the surface of the photoresist layer and on the surface of the substrate in the exposed area of ​​the photoresist layer, wherein the functional layer includes a dielectric film and / or a metal film;

[0040] The photoresist layer is stripped to separate the photoresist layer and a part of the functional layer attached to the surface of the photoresist layer from the substrate, and another part of the functional layer having the target pattern is retained.

[0041] In order to shield a series of problems caused by stress mismatch generated during the deposition process of the functional layer, the inventor of the present invention first thought of using the isolation grooves commonly used in the prior art to isolate the stress conduction in the photoresist layer. Some prior arts that can be referred to, for example, shield the influence of stress on micro-nano structures such as TSV by setting annular isolation grooves, etc. The deformation caused by the stress between the layers is related to the area. The larger the area, the greater the deformation. Therefore, it is generally considered to add annular grooves surrounding the target pattern in the exposure pattern. In this way, after exposure and development, the film layer and the glue layer outside the annular groove area are separated from the film layer and the glue layer inside the annular groove area, and no defects will occur due to the influence of stress.

[0042] However, the inventors have found in practice that the use of only annular isolation grooves is not sufficient to solve the defects caused during the functional layer patterning process, because the inventors have found that the use of annular isolation grooves will also cause the photoresist layer where the target pattern is located to drift easily during the process of shielding stress transfer.

[0043] Specifically, if Figure 4a The fully enclosed continuous isolation grooves of various shapes (such as square, circle, polygon, etc.) shown in the figure can prevent the cracks from extending to the target pattern. However, for some patterns of the same batch, such as Figure 5a and Figure 5b The comparison shows that it can meet the graphical requirements, but there are still a considerable number of graphics that appear as follows Figure 5c In the situation shown, the photoresist layer inside the entire isolation groove and the graphic structure on the photoresist layer have experienced a planar drift phenomenon, which has a very large impact on the quality and subsequent processing of the graphic structure, resulting in a sharp drop in the yield rate.

[0044] Therefore, the present invention proposes a graphical method based on a discontinuous isolation trench structure, such as Figure 5d As shown, isolation is performed using an isolation groove having multiple bridging structures (the photoresist layer in the ring where the isolation groove is located is not grooved or the groove depth is lower than the groove depth of the isolation groove), which can not only avoid the influence of stress, but also position and restrain the photoresist layer where the target pattern is located, avoid drift, and significantly improve the final pattern structure quality and yield rate.

[0045] Regarding the preferred arrangement of the bridging structures, in some embodiments, the plurality of bridging structures are distributed in rotational symmetry with the center of the isolation groove as the center of symmetry.

[0046] In terms of specific numbers, in some embodiments, the number of the bridging structures is generally 3-10.

[0047] The shape of the bridge structure can be many, such as Figure 4bThe straight line and oblique line shown in the figure are better choices, while the broken line (zigzag) and figure eight (a bridge structure contains two oblique lines with different inclination directions). Usually, the straight line and oblique line still have the risk of defects such as cracks extending from the outside to the inside along the bridge structure into the target graphic area, which will also reduce the yield rate in the actual preparation process. However, after choosing the figure eight and zigzag, the shielding ability against defect extension will be significantly enhanced.

[0048] From the perspective of strictly avoiding direct connection between the inner and outer areas of the groove, the zigzag bridging structure is the best choice, but from the perspective of isolation capability and stability, the figure-eight shape is the best choice. The figure-eight structure can more effectively overcome local tension and compression stresses through a pair of symmetrical connecting bridges, and has excellent individual structural stability. In summary, in some embodiments, the commonality of the above-mentioned figure-eight or zigzag structures is that any of the bridging structures includes a first part and a second part, with the radial direction away from the target pattern as the reference direction, the extension direction of the first part is biased to one side, and the extension direction of the second part is biased to the other side.

[0049] In some embodiments, the first portion and the second portion are independently connected to the photoresist layers inside and outside the isolation trench, ie, the figure eight structure described above.

[0050] Or in some embodiments, the first part and the second part are connected end to end, and combined to connect the photoresist layers inside and outside the isolation groove, that is, the zigzag or zigzag structure mentioned above.

[0051] More specifically, in some embodiments, when the first part and the second part are independently connected to the photoresist layers inside and outside the isolation groove, on the side away from the target pattern, the first part and the second part have a first spacing, and on the side close to the target pattern, the first part and the second part have a second spacing, and the second spacing is greater than the first spacing.

[0052] This shape has a smaller "opening" width at the outermost side of the annular isolation groove, and the width gradually increases as it extends inward. This can not only avoid the probability of cracks extending into the area where the target pattern is located through the bridging structure, but also provide a stable bridging effect. It is the best choice among the various different shapes tried by the inventor.

[0053] In some embodiments, when the first part and the second part are connected end to end to combine and connect the photoresist layers inside and outside the isolation groove, one adjacent first part connected to one second part is a cycle, and the bridge structure has multiple cycles along the radial direction. This zigzag bridge structure with multiple cycles is the best form for shielding defects such as cracks from extending inward, and has the strongest shielding ability among many shapes, but because the broken line shape itself has a certain degree of deformability, it only has a certain positioning and restraining effect on the target pattern, and is slightly insufficient in the ability to prevent film layer drift (including translation and rotation).

[0054] As for the specific size characteristics, in some implementation schemes, the width of the isolation groove is 3-30 μm, and the distance between the inner circle of the isolation groove and the target pattern is 5-100 μm.

[0055] In some embodiments, the width of the bridging structure is 3-30 vm.

[0056] Regarding the specific technical features of other preparation processes, in some embodiments, the functional layer is deposited by electron beam evaporation, thermal evaporation, magnetron sputtering, or a combination of two or more thereof.

[0057] In some embodiments, the thickness of the photoresist layer is 0.5-10 μm. In some embodiments, the thickness of the functional layer is 10-1000 nm.

[0058] In some embodiments, the area of ​​the inner region surrounded by the isolation groove is 4 mm 2 the following.

[0059] Based on the experimental phenomenon observed by the inventor of the present invention, if the area of ​​the isolation groove is too large, cracks or wrinkles will also be generated inside, because the degree of stress release is generally related to the density of cracks or wrinkles. When the area is large, the accumulated stress is large, and more dense cracks or wrinkles are needed to release this force. From the experimental results, the area of ​​the crack-free or wrinkle-free area should generally not be greater than 4mm 2 Because the area of ​​the inner region of the isolation groove cannot be too large, there will naturally be a problem of film drift, so a bridge structure needs to be designed to avoid the above problem. It can be seen that the limitation of the area, the formation of cracks or wrinkles, and the design of the bridge structure are all interrelated.

[0060] It should be noted that the above-mentioned dimensional features are the range of dimensional parameters tried by the inventors of the present invention in many practices. Graphic preparation within the range shown above can obtain similar effects, but this does not mean that it cannot be implemented beyond the above range. Based on the same principle, technical personnel in this field can adjust the corresponding dimensional parameters by themselves.

[0061] Furthermore, the second aspect of the embodiment of the present invention also provides the application of the above-mentioned functional layer patterning method in the preparation of micro-nano devices.

[0062] The technical solution of the present invention is further described in detail below through several embodiments and in conjunction with the accompanying drawings. However, the selected embodiments are only used to illustrate the present invention, and do not limit the scope of the present invention.

[0063] Example 1

[0064] This embodiment illustrates a process of functional layer patterning, and the main processes include coating of photoresist, exposure and development, deposition of functional layer and stripping treatment. During exposure, not only patterned irradiation of the target graphic is performed, but also discontinuous annular isolation grooves are formed around the target graphic, wherein the grooves have a radially extending linear bridging structure. For specific information such as material, film thickness, graphic size, etc., please refer to the analysis below.

[0065] Comparative Example 1

[0066] This comparative example is substantially the same as Example 1, the main difference being that no annular isolation groove is formed.

[0067] Comparative Example 2

[0068] This comparative example is substantially the same as Example 1, the main difference being that the illumination pattern of the annular groove is adjusted to form a continuous and complete annular isolation groove.

[0069] The experimental process and results of the above embodiments and comparative examples are specifically as follows:

[0070] like Figure 5a As shown, after a 240nm thick TiO2 / Ag (Glass / 20nmTiO2 / 25nmAg / 50nm TiO2 / 25nm Ag / 120nm TiO2) mixed film is deposited on a photoresist pattern without isolation grooves, it can be observed that the cracks extend to the target pattern area; Figure 5b and 5c The photo shows a 240nm thick TiO2 / Ag (Glass / 20nm TiO2 / 25nm Ag / 50nm TiO2 / 25nm Ag / 120nm TiO2) mixed film deposited on a closed isolation trench photoresist pattern. Some normal target pattern areas can obtain finished products, but a considerable part of the target pattern area has a film layer drift problem, which cannot be aligned in subsequent processes (such as transfer or continued micro-nano processing), resulting in the appearance of waste products; Figure 5dThe photo shows a 240nm thick TiO2 / Ag (Glass / 20nm TiO2 / 25nmAg / 50nm TiO2 / 25nm Ag / 120nm TiO2) mixed film deposited on the isolation trench photoresist pattern with fewer connecting bridges. Figure 5e The SEM image after the peeling process is shown. The width of the isolation groove is 10um, and the length and width of the square isolation groove are both 250μm.

[0071] It can be seen that in Example 1, the isolation groove effectively blocks the cracks outside the target pattern area, and the pattern morphology is complete after the isolation groove pattern is peeled off. In the control example, the completely closed isolation groove sometimes causes the film layer drift in the entire internal pattern area, while the partial isolation groove structure with the connecting bridge has better structural stability of the film layer in the internal pattern area due to the existence of the connecting bridge, and no drift phenomenon is observed.

[0072] Example 2

[0073] This embodiment adjusts the shape of the bridge structure based on the embodiment 1, such as Figure 4b As shown in the third small picture in the figure, a plurality of zigzag shapes are adopted which extend radially as a whole but are inclined left and right, and the total width remains consistent with that of Example 1.

[0074] In the straight-line bridging structure shown in Example 1, crack extension can usually be obviously avoided. However, since the crack is generally perpendicular to the isolation groove, the straight-line bridging structure still has the risk of cracks entering the target graphic area along the bridging structure. The above phenomenon has also been observed in the actual preparation process. In order to eliminate the above phenomenon, this embodiment adopts a zigzag bridging structure. After improvement, the above phenomenon disappears.

[0075] However, the zigzag bridge structure itself is not strong enough and has strong variability, so its anchoring ability to the film layer is weak. In some cases with strong stress (such as large temperature difference or large stress in the film layer itself), slight deviation of the target pattern will still occur, but in most cases it is not enough to affect the subsequent process.

[0076] Example 3

[0077] This embodiment adjusts the shape of the bridge structure based on the embodiment 1, such as Figure 4b As shown in the third small figure in the figure, multiple figure-eight shapes are adopted that extend radially as a whole but are inclined left and right, and the average width (the average of the outer width and the inner width of the figure-eight bridge structure in the annular isolation groove, and the width refers to the distance between the two figure-eight structures) remains consistent with Example 1.

[0078] The figure-eight structure has excellent anchoring ability and isolation ability. Due to the inclined extension (usually forming an angle of about 45° with the radial direction, such as 30-60°), it is not easy for cracks to extend inside. The stability of the triangle determines that the figure-eight bridging structure is not easy to deform. Therefore, among a variety of different shapes, this shape performs the best.

[0079] From the above-mentioned embodiments and control examples, it can be found that the completely enclosed isolation groove sometimes has a film layer drift phenomenon in the entire internal pattern area, while the partial isolation groove structure with a connecting bridge has a better structural stability of the film layer in the internal pattern area due to the presence of the connecting bridge, and no drift phenomenon is observed. It is preferred to have a symmetrically distributed isolation groove structure with connecting bridges, which is more conducive to structural stability. The zigzag and figure-eight connecting bridge structures can effectively avoid the possibility of cracks extending along the connecting bridge to the inside of the isolation groove while having a stabilizing effect. These isolation groove structures with different connecting bridges, due to the presence of the connecting bridge, the isolation groove is not isolated, which is more conducive to the release of stress, and can better prevent cracks from extending into the target pattern, thereby ensuring the integrity of the target pattern.

[0080] Based on the above embodiments and control examples, it can be clearly seen that the functional layer patterning method provided in the embodiments of the present invention utilizes discontinuous isolation grooves to circumferentially surround the patterned area, thereby blocking the stress generated during the functional layer deposition process and avoiding cracking, wrinkling, and even falling off in the patterned area; at the same time, the ungrooved discontinuous parts in the isolation grooves serve as bridging structures, which have a positioning and restraining effect on the patterned area, avoiding the phenomenon of film layer drift in the grooves caused by complete surrounding of the grooves, and can achieve crack-free, wrinkle-free, and drift-free functional layer deposition and patterning on the patterned photoresist, which has significant application value in the field of micro-nano processing of devices.

[0081] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A functional layer patterning method, characterized in that: include: A patterned photoresist layer is formed on the surface of the substrate, wherein the photoresist layer is provided with an isolation groove, wherein the isolation groove discontinuously surrounds the target pattern and has a plurality of radially extending bridge structures, wherein the bridge structures connect the photoresist layers inside and outside the isolation groove; Depositing a functional layer on the surface of the photoresist layer and on the surface of the substrate in the exposed area of ​​the photoresist layer, wherein the functional layer includes a dielectric film and / or a metal film; The photoresist layer is stripped to separate the photoresist layer and a part of the functional layer attached to the surface of the photoresist layer from the substrate, and another part of the functional layer having the target pattern is retained.

2. The functional layer patterning method according to claim 1, characterized in that: The plurality of bridge structures are distributed in rotational symmetry with the center of the isolation groove as the symmetry center.

3. The functional layer patterning method according to claim 2, characterized in that: The number of the bridging structures is 3-10.

4. The functional layer patterning method according to claim 1, characterized in that: Any of the bridge structures comprises a first part and a second part, with the radial direction away from the target pattern as a reference direction, the extension direction of the first part is inclined to one side, and the extension direction of the second part is inclined to the other side.

5. The functional layer patterning method according to claim 4, characterized in that: The first part and the second part are independently connected to the photoresist layers inside and outside the isolation groove; Alternatively, the first portion and the second portion are connected end to end to combine and connect the photoresist layers inside and outside the isolation groove.

6. The functional layer patterning method according to claim 5, characterized in that: When the first part and the second part are independently connected to the photoresist layers inside and outside the isolation groove, the first part and the second part have a first spacing on the side away from the target pattern, and the first part and the second part have a second spacing on the side close to the target pattern, and the second spacing is greater than the first spacing.

7. The functional layer patterning method according to claim 5, characterized in that: When the first part and the second part are connected end to end to combine and connect the photoresist layers inside and outside the isolation groove, a cycle is formed by connecting one adjacent first part to one adjacent second part, and the bridge structure has multiple cycles along the radial direction.

8. The functional layer patterning method according to claim 1, characterized in that: The width of the isolation groove is 3-30 μm, and the distance between the inner circle of the isolation groove and the target pattern is 5-100 μm; And / or, the width of the bridge structure is 3-30 μm.

9. The functional layer patterning method according to claim 1, characterized in that: The functional layer is deposited by electron beam evaporation, thermal evaporation, magnetron sputtering or a combination of two or more thereof; and / or, the thickness of the photoresist layer is 0.5-10 μm, and / or, the thickness of the functional layer is 10-1000 nm; and / or, the area of ​​the inner region surrounded by the isolation groove is 4 mm 2 the following.

10. Use of the functional layer patterning method according to any one of claims 1 to 9 in the preparation of micro-nano devices.

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