Plasma generation apparatus, HDP CVD apparatus, and film thickness optimization method

Abstract

The application provides a plasma generating device, an HDP CVD device and a film thickness optimization method. The plasma generating device comprises a top coil, a side coil, a shielding device, an electromagnet device and a power supply. The top coil is located above a plasma chamber and generates a first electromagnetic field; the side coil is arranged around the side of the plasma chamber and generates a second electromagnetic field; the shielding device covers the top coil, the side coil and the upper part of the plasma chamber; the electromagnet device is symmetrically distributed on both sides of the periphery of the shielding device and is powered by the power supply to generate a third electromagnetic field; wherein the power-on and power-off, the current size and direction of the power supply are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field after the superposition of the first electromagnetic field, the second electromagnetic field and the third electromagnetic field.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to the field of semiconductor thin film deposition. Background Technology

[0002] In the development of high-density plasma (HDP) processes, it is necessary to optimize the film thickness distribution to meet the uniformity requirements through source RF power optimization, gas flow rate adjustment, and nozzle replacement. However, once the process parameters are determined, the electromagnetic field distribution is basically fixed. If film thickness distribution becomes eccentric, or if there are abnormal high and low points, or if the customer's requirements for multiple film thickness ranges are very stringent, then conventional tuning methods (such as adjusting the flow rate of the reactive gas and changing the orifice diameter) have little impact on the magnetic field distribution and are unlikely to optimize the film thickness. Summary of the Invention

[0003] To precisely optimize film thickness, this invention provides a plasma generation device, an HDP CVD device (high-density plasma chemical vapor deposition device), and a film thickness optimization method.

[0004] The plasma generating device of the present invention includes: a top coil, a side coil, a shielding device, an electromagnet device, and a power supply.

[0005] The top coil is located above a plasma chamber and generates a first electromagnetic field.

[0006] The side coils are arranged around the side of the plasma chamber to generate a second electromagnetic field.

[0007] The shielding device covers the top coil, the side coil, and the upper part of the plasma chamber.

[0008] The electromagnets are symmetrically distributed on both sides of the outer periphery of the shielding device, and are powered by the power source to generate a third electromagnetic field.

[0009] The switching on and off of the power supply, the magnitude and direction of the current are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field resulting from the superposition of the first, second and third electromagnetic fields.

[0010] In one embodiment, the electromagnet device has an even number of electromagnets, each of which is externally connected to a power source.

[0011] In one embodiment, the power source is a DC power source.

[0012] In one embodiment, the conduction or cutoff of the current through each electromagnet in the electromagnet device, the direction of the current and the magnitude of the current are adjusted according to the film thickness distribution requirements, thereby adjusting the distribution of the third electromagnetic field and thus affecting the total electromagnetic field to adjust the film thickness to a preset value.

[0013] In one embodiment, when the film thickness distribution becomes abnormal, a positive current is applied to the power supply to generate a positive electromagnetic field. Then, it is determined whether the film thickness is improving towards the desired film thickness value. If it is improving, the current direction is kept unchanged, and the current magnitude is further adjusted to meet the desired film thickness value. If it is not improving, a reverse current is applied to the power supply to generate a negative electromagnetic field, and the current magnitude is adjusted to meet the desired film thickness value.

[0014] In one embodiment, the plasma generating device is a high-density plasma generating device.

[0015] In one embodiment, the magnetic flux density of the third electromagnetic field is calculated according to the following formula:

[0016]

[0017] in,

[0018] B is the magnetic induction intensity of the third electromagnetic field;

[0019] N is the number of turns of the electromagnet's coil;

[0020] I represents the current of the power supply;

[0021] U is the voltage of the power supply;

[0022] R is the winding resistance of the electromagnet;

[0023] δ is the air gap length;

[0024] μ0 is the vacuum permeability.

[0025] The present invention also provides a high-density plasma chemical vapor deposition apparatus, including a plasma chamber, a top coil, a side coil, a shielding device, an electromagnet device, and a power supply.

[0026] The top coil is located above the plasma chamber and generates a first electromagnetic field.

[0027] The side coils are arranged around the side of the plasma chamber to generate a second electromagnetic field.

[0028] The shielding device covers the top coil, the side coil, and the upper part of the plasma chamber.

[0029] The electromagnets are symmetrically distributed on both sides of the outer periphery of the shielding device, and are powered by the power source to generate a third electromagnetic field.

[0030] The switching on and off of the power supply, the magnitude and direction of the current are adjustable to adjust the third electromagnetic field; the film thickness is adjusted by the total electromagnetic field resulting from the superposition of the first, second and third electromagnetic fields.

[0031] In one embodiment, the electromagnet device has an even number of electromagnets, each of which is externally connected to a power source.

[0032] In one embodiment, the power source is a DC power source.

[0033] In one embodiment, the conduction or cutoff of the current through each electromagnet in the electromagnet device, the direction of the current and the magnitude of the current are adjusted according to the film thickness distribution requirements, thereby adjusting the distribution of the third electromagnetic field and thus affecting the total electromagnetic field to adjust the film thickness to a preset value.

[0034] In one embodiment, when the film thickness distribution becomes abnormal, a positive current is applied to the power supply to generate a positive electromagnetic field. Then, it is determined whether the film thickness is improving towards the desired film thickness value. If it is improving, the current direction is kept unchanged, and the current magnitude is further adjusted to meet the desired film thickness value. If it is not improving, a reverse current is applied to the power supply to generate a negative electromagnetic field, and the current magnitude is adjusted to meet the desired film thickness value.

[0035] In one embodiment, the plasma chamber is a high-density plasma chamber.

[0036] In one embodiment, the magnetic flux density of the third electromagnetic field is calculated according to the following formula:

[0037]

[0038] in,

[0039] B is the magnetic induction intensity of the third electromagnetic field;

[0040] N is the number of turns of the electromagnet's coil;

[0041] I represents the current of the power supply;

[0042] U is the voltage of the power supply;

[0043] R is the winding resistance of the electromagnet;

[0044] δ is the air gap length;

[0045] μ0 is the vacuum permeability.

[0046] The present invention also provides a method for optimizing film thickness using the plasma generation equipment described above, the method comprising:

[0047] After measuring the abnormal film thickness distribution, a positive current was applied to generate a positive electromagnetic field;

[0048] How to determine whether the film thickness is improving towards a desired film thickness value?

[0049] If improvements are made, the current direction remains unchanged, and the current magnitude is further adjusted so that the film thickness meets the expected value.

[0050] If the situation does not improve, a reverse current is applied to generate a negative electromagnetic field, and the current magnitude is adjusted so that the film thickness meets the desired value.

[0051] This invention can proactively and precisely adjust the film thickness distribution as needed based on the existing film thickness distribution, solving problems such as film thickness distribution eccentricity and the existence of abnormal high points, thus overcoming the difficulties that conventional machine adjustment methods struggle with. It also reduces the need for frequent cavity openings (by optimizing the film thickness distribution through nozzle adjustment), avoiding the drawbacks of frequent cavity openings such as longer processing times and exposure of critical components to air, thereby improving machine stability and operating time. Attached Figure Description

[0052] The above-described invention and the following detailed description will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are merely examples of the claimed invention. In the drawings, the same reference numerals represent the same or similar elements.

[0053] Figure 1 A schematic diagram of an HDP CVD apparatus according to an embodiment of the present invention is shown.

[0054] Figure 2A The simulation diagram of the film thickness distribution before the electromagnet is installed is shown.

[0055] Figure 2B A simulation diagram of the film thickness distribution after installing an electromagnet device at the 3 o'clock and 9 o'clock positions according to an embodiment of the present invention is shown.

[0056] Figure 3A The sputtering rate distribution before the electromagnet is installed is shown.

[0057] Figure 3B A sputtering rate distribution diagram is shown after installing an electromagnet according to an embodiment of the present invention.

[0058] Figure 3C A schematic diagram showing the sputtering rate change after installing a magnet according to an embodiment of the present invention is shown.

[0059] Figure 4A schematic diagram of a method for optimizing film thickness distribution according to an embodiment of the present invention is shown. Detailed Implementation

[0060] The following detailed description of the features and advantages of the present invention provides sufficient information for any person skilled in the art to understand and implement the invention. Furthermore, based on the specification, claims, and drawings disclosed herein, those skilled in the art can easily understand the related objectives and advantages of the invention. Although the description of the invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may arise based on the claims of the invention. To provide a thorough understanding of the invention, numerous specific details will be included in the following description. The invention may also be implemented without using these details. Moreover, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0061] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0062] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0063] It is understood that while terms such as "first," "second," and "third" may be used herein to describe various components, channels, assemblies, regions, layers, and / or parts, these components, channels, assemblies, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, assemblies, regions, layers, and / or parts. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0064] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0065] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0066] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0067] Figure 1 A schematic diagram of an HDP CVD apparatus according to an embodiment of the present invention is shown. The HDP CVD apparatus includes an HDP chamber 101, a top coil 102, a side coil 103, a shielding device 104, an electromagnet device 105, and a power supply 106. The top coil 102, side coil 103, shielding device 104, electromagnet device 105, and power supply 106 constitute a plasma generation device.

[0068] A top coil 102 is positioned above the HDP chamber 101 to generate a first electromagnetic field. In one embodiment, this first electromagnetic field is adjustable.

[0069] Side coils 103 are disposed around the side of the HDP chamber 101 to improve the uniformity of ion distribution within the chamber, thereby generating a second electromagnetic field. In one embodiment, this second electromagnetic field is adjustable.

[0070] The shielding device (shielding cover) 104 covers the top coil 102, the side coil 103 and the upper part of the HDP chamber 101.

[0071] The electromagnet devices 105 are symmetrically distributed on both sides of the shielding device 104.

[0072] In one embodiment, the electromagnet device 105 has two electromagnets.

[0073] In one embodiment, the electromagnet device 105 includes an even number of electromagnets arranged symmetrically, such as 2, 4, 6...n.

[0074] Each electromagnet is connected to a corresponding power supply 106, with a current of I flowing through it, thereby generating a third electromagnetic field. This third electromagnetic field can be adjusted by changing the magnitude and direction of the current.

[0075] The total electromagnetic field is obtained by superimposing the first, second, and third electromagnetic fields, which affects the film thickness distribution (deposition rate and sputtering rate).

[0076] In one embodiment, the power supply 106 is a DC power supply.

[0077] In one embodiment, the switching on or off of the DC power supply, the magnitude of the generated current, and the direction of the current can be adjusted as needed. That is, the current has the function of writing the magnitude and direction of the current. For example, the switching, directionality, and current magnitude of a certain electromagnet can be determined according to the need for adjusting the film thickness distribution, thereby adjusting the distribution of the third electromagnetic field and affecting the total electromagnetic field.

[0078] Specifically, when an anomaly in the film thickness distribution is detected, the power supply 106 applies a positive current to generate a positive electromagnetic field. Then, it is determined whether the film thickness is improving towards a desired value. If it is improving, the current direction remains unchanged, and the current magnitude is further adjusted to match the desired film thickness. If it is not improving, a reverse current is applied to generate a negative electromagnetic field, and the current magnitude is adjusted to match the desired film thickness.

[0079] It should be noted that the terms "forward current" and "reverse current" used in this article are only used to distinguish between two currents in opposite directions, and do not refer to a specific direction of flow.

[0080] Specifically, the relationship between the magnetic induction intensity B of the third electromagnetic field and the current I of the power supply 106 is as follows:

[0081]

[0082] in,

[0083] N is the number of turns in the electromagnet's coil;

[0084] I represents the power supply current, in amperes (A).

[0085] U is the power supply voltage, in volts (V).

[0086] R is the wire resistance, in Ω;

[0087] δ is the air gap length, in meters (m).

[0088] μ0 is the free permeability, in Wb / A·m.

[0089] The formula for calculating magnetic flux density B is as above, where N, δ, and μ0 are constants; therefore, B is directly proportional to the magnitude of I. If the difference between the required adjustment point film thickness thk and the target value is... By applying a 10A current, a superimposed magnetic field is generated, affecting the thickness at the target point. If the difference between the film thickness thk and the target value is reduced to... If the current direction remains unchanged, the current is increased to twice the current value through proportional conversion. The difference between the film thickness and the target value is then confirmed again, thereby forming a closed loop.

[0090] Figure 2A The simulation diagram of the film thickness distribution without an electromagnet is shown, where the contour lines represent the magnetic flux density modulus (G) and the arrows on the surface represent the magnetic flux density.

[0091] Figure 2B A simulation diagram of the film thickness distribution after installing an electromagnet device according to an embodiment of the present invention is shown, wherein the contour lines represent the magnetic flux density modulus (G), and the arrows on the surface represent the magnetic flux density. In this embodiment, the electromagnet is installed at the 3 o'clock and 9 o'clock positions, and the magnetic induction intensity Bb = 1000G. (Comparison) Figure 2A and Figure 2B As can be seen, the film thickness distribution has shifted horizontally.

[0092] Figure 3A The sputtering rate distribution before the electromagnet is installed is shown, where the corresponding film thickness is Film thickness range

[0093]

[0094] Figure 3B This diagram illustrates the sputtering rate distribution after mounting an electromagnet according to an embodiment of the present invention, where the corresponding film thickness is... Film thickness range is In particular, Figure 3A 301 and Figure 3B Figures 302 show the sputtering rates without and with an electromagnet, respectively.

[0095] Figure 3CA schematic diagram illustrating the sputtering rate change after installing a magnet according to an embodiment of the present invention is shown. As shown, the sputtering rate at the low point increases significantly, resulting in a marked improvement in the sputtering rate range, thereby meeting customer specifications.

[0096] Figure 4 A schematic diagram of a method for optimizing film thickness distribution according to an embodiment of the present invention is shown. The method includes the following steps:

[0097] Step 401: An abnormality was found in the film thickness distribution.

[0098] Step 402: Apply a positive current to generate a positive electromagnetic field.

[0099] Step 403: Determine if the film thickness is improving toward the expected film thickness value. If it is improving, proceed to step 404; if it is not improving, proceed to step 405.

[0100] Step 404: If the improvement is achieved, keep the current direction unchanged and further adjust the current magnitude to meet the desired film thickness.

[0101] Step 405: If the situation does not improve, apply a reverse current to generate a negative electromagnetic field.

[0102] Step 406: Adjust the current to meet the desired film thickness.

[0103] It should be noted that the terms "forward current" and "reverse current" used in this article are only used to distinguish between two currents in opposite directions, and do not refer to a specific direction of flow.

[0104] This invention can proactively and precisely adjust the film thickness distribution as needed based on the existing film thickness distribution, solving problems such as film thickness distribution eccentricity and the existence of abnormal high points, thus overcoming the difficulties that conventional machine adjustment methods struggle with. It also reduces the need for frequent cavity openings (by optimizing the film thickness distribution through nozzle adjustment), avoiding the drawbacks of frequent cavity openings such as longer processing times and exposure of critical components to air, thereby improving machine stability and operating time.

[0105] Those skilled in the art will understand that the various illustrative components, modules, blocks, units, circuits, systems, and steps described in conjunction with the embodiments disclosed herein can be implemented in hardware, software (including firmware, resident software, microcode, etc.), or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, modules, blocks, units, circuits, systems, and steps described above are generalized in their functional form. Whether such functionality is implemented in hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0106] This application uses flowcharts to illustrate the operations or steps performed by a system according to embodiments of this application. It should be understood that the preceding or following operations or steps are not necessarily performed in exact order. Instead, various operations or steps can be processed in reverse order or simultaneously. Furthermore, other operations or steps may be added to these processes, or one or more operations or steps may be removed from these processes.

[0107] Unless expressly stated in the claims, the order of processing elements and sequences, the use of numbers and letters, or the use of other names described in this application are not intended to limit the order of the processes and methods of this application.

[0108] Furthermore, aspects of this application may be manifested as a computer product located on one or more computer-readable media, the product including computer-readable program code.

[0109] A computer-readable signal medium may contain a propagated data signal containing computer program encoding, for example, on baseband or as part of a carrier wave. This propagated signal may take various forms, including electromagnetic, optical, and so on, or suitable combinations thereof. A computer-readable signal medium can be any computer-readable medium other than a computer-readable storage medium, which can be connected to an instruction execution system, apparatus, or device to enable communication, propagation, or transmission of a program for use. The program encoding located on the computer-readable signal medium can be propagated through any suitable medium, including radio, cable, fiber optic cable, RF, or similar media, or any combination of the above media.

[0110] The computer program code required for the operation of each part of this application can be written in any one or more programming languages, including object-oriented programming languages ​​such as Java, Scala, Smalltalk, Eiffel, JADE, Emerald, C++, C#, VB.NET, Python, etc., conventional procedural programming languages ​​such as C, Visual Basic, Fortran 2003, Perl, COBOL 2002, PHP, ABAP, dynamic programming languages ​​such as Python, Ruby, and Groovy, or other programming languages. This program code can run entirely on the user's computer, or as a standalone software package on the user's computer, or partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer can be connected to the user's computer through any network, such as a local area network (LAN) or wide area network (WAN), or connected to an external computer (e.g., via the Internet), or in a cloud computing environment, or used as a service such as Software as a Service (SaaS).

[0111] Those skilled in the art will understand that information, signals, and data can be represented using any of a variety of different techniques and arts. For example, the data, instructions, commands, information, signals, bits, symbols, and chips described throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0112] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0113] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0114] The terminology and expressions used above are for descriptive purposes only, and the invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean excluding any illustrative and descriptive equivalent features (or parts thereof), and it should be recognized that various modifications that may exist should also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be considered to cover all such equivalents.

[0115] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims.

[0116] Similarly, it should be noted that although the present invention has been described with reference to the specific embodiments described above, those skilled in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, any changes or modifications to the above embodiments within the scope of the essential spirit of the present invention will fall within the scope of the claims of this application.

Claims

1. A plasma generating apparatus, characterized by comprising: The application relates to a high-density plasma generating device. The device comprises a top coil, a side coil, a shielding device, an electromagnet device and a power supply. The top coil is located above a plasma chamber and generates a first electromagnetic field. The side coil is arranged around the side of the plasma chamber and generates a second electromagnetic field. The shielding device covers the top coil, the side coil and the upper part of the plasma chamber. The electromagnet device is symmetrically distributed on both sides of the periphery of the shielding device and is powered by the power supply to generate a third electromagnetic field. The on and off of the power supply, the current size and direction are adjustable to adjust the third electromagnetic field. The on and off of the current, the directionality and the current size of each electromagnet in the electromagnet device are adjusted according to the film thickness distribution requirement to adjust the third electromagnetic field distribution and then affect the total electromagnetic field to adjust the film thickness to a preset value. When the film thickness distribution is abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field.

2. The plasma generating device of claim 1, wherein, The film thickness is then judged whether it is improved in the direction of the expected film thickness value.

3. The plasma generating device of claim 1, wherein, If the film thickness is improved, the current direction is kept unchanged and the current size is further adjusted to meet the expected film thickness value.

4. The plasma generating device of claim 1, wherein, If the film thickness is not improved, a reverse current is applied to the power supply to generate a negative electromagnetic field and the current size is adjusted to meet the expected film thickness value.

5. The plasma generating device of claim 1, wherein, The electromagnet device has an even number of electromagnets and each electromagnet is circumscribed by a power supply. The power supply is a direct current power supply. The plasma generating device is a high-density plasma generating device. The magnetic induction intensity of the third electromagnetic field is calculated according to the following formula: B = (N * I) / (2 * pi * R) * (1 / (delta + mu0 * U)) B is the magnetic induction intensity of the third electromagnetic field. N is the number of turns of the electromagnet. I is the current of the power supply. U is the voltage of the power supply.

6. A high-density plasma chemical vapor deposition apparatus, characterized by comprising: R is the winding resistance of the electromagnet. Delta is the air gap length. Mu0 is the vacuum permeability. The application relates to a high-density plasma generating device. The device comprises a plasma chamber, a top coil, a side coil, a shielding device, an electromagnet device and a power supply. The top coil is located above the plasma chamber and generates a first electromagnetic field. The side coil is arranged around the side of the plasma chamber and generates a second electromagnetic field. The shielding device covers the top coil, the side coil and the upper part of the plasma chamber. The electromagnet device is symmetrically distributed on both sides of the periphery of the shielding device and is powered by the power supply to generate a third electromagnetic field. The on and off of the power supply, the current size and direction are adjustable to adjust the third electromagnetic field. The on and off of the current, the directionality and the current size of each electromagnet in the electromagnet device are adjusted according to the film thickness distribution requirement to adjust the third electromagnetic field distribution and then affect the total electromagnetic field to adjust the film thickness to a preset value. When the film thickness distribution is abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field, and then it is determined whether the film thickness is improved toward a desired film thickness value. If the film thickness is improved, the current direction is kept unchanged and the current size is further adjusted to meet the desired film thickness value. If the film thickness is not improved, a reverse current is applied to the power supply to generate a reverse electromagnetic field, and the current size is adjusted to meet the desired film thickness value.

7. The high-density plasma chemical vapor deposition apparatus of claim 6, wherein, The electromagnet device has an even number of electromagnets, and each electromagnet is circumscribed by a power supply.

8. The high-density plasma chemical vapor deposition apparatus of claim 6, wherein, The power supply is a direct current power supply.

9. The high-density plasma chemical vapor deposition apparatus of claim 6, wherein, The plasma chamber is a high-density plasma chamber.

10. The high-density plasma chemical vapor deposition apparatus of claim 6, wherein, The magnetic induction intensity of the third electromagnetic field is calculated according to the following formula: B = μ0N2I / 2R (U + IR) δ B is the magnetic induction intensity of the third electromagnetic field; N is the number of turns of the electromagnet; I is the current of the power supply; U is the voltage of the power supply; R is the winding resistance of the electromagnet; δ is the air gap length; μ0 is the vacuum permeability.

11. A film thickness optimization method employing the plasma generating apparatus according to claim 1, characterized by, The method comprises: When the film thickness distribution is abnormal, a forward current is applied to the power supply to generate a forward electromagnetic field; It is determined whether the film thickness is improved toward a desired film thickness value, If the film thickness is improved, the current direction is kept unchanged and the current size is further adjusted to meet the desired film thickness value. If the film thickness is not improved, a reverse current is applied to the power supply to generate a reverse electromagnetic field, and the current size is adjusted to meet the desired film thickness value.

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