Process method for ultraviolet light assistance and plasma reinforcement

Abstract

The invention relates to a process method for ultraviolet light assistance and plasma reinforcement. The process method comprises the following steps. Providing a lower cavity; the lower cavity is provided with a reaction space, and a cavity opening is formed in the top of the lower cavity. Providing a top cover plate; the top cover plate is provided with an upper surface and a lower surface, and the top cover plate is further provided with a window and a plurality of vent holes which are communicated with the upper surface and the lower surface respectively. The cavity opening is sealed by a top cover plate, and the lower surface faces the reaction space to form a reaction cavity. An outer pipe body and an inner pipe body are arranged, the inner pipe body is located in the outer pipe body, the window and the vent holes are covered with the bottom end of the outer pipe body, and the bottom end of the inner pipe body is connected to the window. A first gas chamber is formed in the inner pipe body and communicates with the window. And a second gas chamber is formed between the outer pipe body and the inner pipe body, and is communicated with the plurality of vent holes. An ultraviolet light source is arranged at the top end of the inner pipe body. And an induction coil is arranged around the outer pipe body.

Description

Technical Field

[0001] The present invention relates to the enhancement of ALD or ALE processes, and more particularly to a UV-assisted and plasma-enhanced process method. Background Art

[0002] In the atomic layer deposition (ALD) or atomic layer epitaxy (ALE) process, or other wafer surface processing processes, ultraviolet light assistance and plasma enhancement are applied to enhance deposition or epitaxy.

[0003] In the traditional process, UV-assisted equipment and plasma-enhanced equipment are independent equipment, which means that UV-assisted and plasma-enhanced equipment cannot be performed simultaneously and must be performed separately. Separately performing UV-assisted and plasma-enhanced equipment involves the transfer of wafers between different equipment, which affects the efficiency of ALD or ALE operations. Summary of the invention

[0004] In view of the above technical problems, the present invention proposes a UV-assisted and plasma-enhanced process method for combining UV-assisted and plasma-enhanced in a single process.

[0005] The present invention provides a UV-assisted and plasma-enhanced process method, comprising: providing a lower cavity; wherein the lower cavity has a reaction space, and a cavity opening is opened at the top of the lower cavity; providing a top cover plate; wherein the top cover plate has an upper surface and a lower surface, and the top cover plate further has a window and a plurality of vents, respectively connecting the upper surface and the lower surface, and the plurality of vents are arranged around the window; the cavity opening is closed with the top cover plate, and the lower surface is directed toward the reaction space to form a reaction cavity; an outer tube body and an inner tube body are arranged, so that the inner tube body is located in the outer tube body, and the bottom end of the outer tube body covers the window and the plurality of vents; The invention relates to a method for manufacturing a plurality of air vents, wherein the inner tube body is provided with a first gas chamber, and the first gas chamber is connected to the window; the outer tube body is provided with a second gas chamber, and the second gas chamber is connected to the plurality of air vents; an ultraviolet light source is provided at the top of the inner tube body to emit ultraviolet light to the first gas chamber; an induction coil is provided to surround the outer tube body to provide a magnetic flux that varies with time to the outer tube body and induce an electric field; a first gas is introduced into the first gas chamber, and a second gas is introduced into the second gas chamber; and the ultraviolet light source and the induction coil can be selectively started.

[0006] Furthermore, the UV-assisted and plasma-enhanced process method also includes providing a first shower head, which is combined with the lower surface of the top cover plate and covers the plurality of vents.

[0007] Furthermore, the UV-assisted and plasma-enhanced process method also includes providing a second spray head, which is combined with the lower surface of the top cover plate and covers an end of the precursor pipeline located on the lower surface.

[0008] Preferably, the ratio between the outer diameter of the first spray head and the outer diameter of the second spray head is between 0.3 and 0.9.

[0009] Preferably, the ratio of the inner diameter of the inner tube body to the inner diameter of the outer tube body is between 0.1 and 0.6.

[0010] Furthermore, the step of setting the ultraviolet light source at the top of the inner tube body also includes setting a spacer connected to the outer tube body and the top of the inner tube body, and combining the ultraviolet light source with the spacer; wherein the spacer has a central opening and an outer cavity, the central opening is connected to the first gas chamber, and the outer cavity is connected to the second gas chamber.

[0011] Furthermore, the UV-assisted and plasma-enhanced process method also includes: setting at least one first air inlet pipe on the spacer, extending from the outer side of the spacer to the central opening, for receiving the first gas and transporting it to the first gas chamber; and setting at least one second air inlet pipe on the spacer, extending from the outer side of the spacer to the outer cavity, for receiving the second gas and transporting it to the second gas chamber.

[0012] Preferably, the step of disposing the outer tube body and the inner tube body further comprises disposing two transparent partitions to seal the top and bottom ends of the inner tube body, so that the first gas chamber is closed.

[0013] Furthermore, before the ultraviolet light source is provided, an adapter ring is provided, which is combined with the ultraviolet light source and the top of the outer tube body and the inner tube body, so that the ultraviolet light source is combined with the top of the inner tube body through the adapter ring.

[0014] Furthermore, the UV-assisted and plasma-enhanced process method also includes providing a wafer support seat, which is located in the reaction space of the lower cavity, and the wafer support seat is arranged corresponding to the lower surface of the top cover plate; wherein, the wafer support seat includes a wafer support plate and a linear actuator, the top surface of the wafer support plate faces the lower surface of the top cover plate, and the linear actuator is connected to the bottom surface of the wafer support plate to drive the wafer support plate to move linearly up and down.

[0015] Based on the above-mentioned UV-assisted and plasma-enhanced process methods, the functions of UV-assisted and plasma-enhanced can be combined in a single design. The single design can use UV-assisted and plasma-enhanced at the same time, or can select one of UV-assisted and plasma-enhanced for implementation, but there is no need to transfer wafers between different equipment, which can effectively improve the efficiency of the ALD / ALE process. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a cross-sectional exploded view of a two-in-one photoelectric assisted process chamber design in an embodiment of the present invention.

[0017] Figure 2 FIG. 4 is a cross-sectional view of a two-in-one photoelectric assisted process chamber design in an embodiment of the present invention.

[0018] Figure 3 and Figure 4 It is a cross-sectional view of some components in a two-in-one optoelectronic assisted process chamber design in an embodiment of the present invention.

[0019] Figure 5 It is a cross-sectional exploded view of some components in a two-in-one optoelectronic assisted process chamber design in an embodiment of the present invention.

[0020] Figure 6 FIG. 4 is another cross-sectional view of a two-in-one photoelectric assisted process chamber design in an embodiment of the present invention.

[0021] Figure 7 It is a three-dimensional diagram of a top cover plate, a first spray head and a second spray head in an embodiment of the present invention.

[0022] Figure 8 It is a three-dimensional diagram of a first spray head and a second spray head in an embodiment of the present invention.

[0023] Fig. 9 and Fig.10 It is a flow chart of the UV-assisted and plasma-enhanced process method of the present invention.

[0024] Explanation of reference numerals: 110-top cover plate; 111-upper surface; 112-lower surface; 113-setting groove; 114-window; 115-vent; 116-precursor pipeline; 120-outer tube; 122-second gas chamber; 130-inner tube; 131-first gas chamber; 140-ultraviolet light source; 150-induction coil; 160-spacer; 161-central opening; 162-outer cavity; 163-first air inlet pipeline; 164-second air inlet pipeline; 170-coil support; 180-transparent Bright partition; 190-adapter ring; 200-lower cavity; 200a-reaction space; 201-cavity opening; 202-blocker; 210-first spray head; 210a-plasma channel; 220-second spray head; 220a-precursor channel; 230-wafer support; 232-wafer support plate; 234-linear actuator; 236-heater; 240-bias power supply; a-inner tube body inner diameter; b-outer tube body inner diameter; c-first spray head outer diameter; d-second spray head outer diameter; S110~S160-steps. DETAILED DESCRIPTION

[0025] See also Figure 1 to Figure 2As shown, a two-in-one photoelectric assisted process chamber design is used to perform a UV-assisted and plasma-enhanced process method disclosed in an embodiment of the present invention.

[0026] like Figure 1 and Figure 2 As shown, the photoelectric assisted process chamber design includes a top cover plate 110 , an outer tube body 120 , an inner tube body 130 , an ultraviolet light source 140 , an induction coil 150 and a lower chamber 200 .

[0027] like Figure 2 As shown, the lower chamber 200 has a reaction space 200a. A chamber opening 201 is formed at the top of the lower chamber 200, and the chamber opening 201 is connected to the reaction space 200a.

[0028] like Figure 1 and Figure 2 As shown, the top cover plate 110 has an upper surface 111 and a lower surface 112, and the upper surface 111 has a concave setting groove 113. The top cover plate 110 further has a window 114 and a plurality of vents 115, which are located in the setting groove 113. The window 114 and the plurality of vents 115 are connected to the upper surface 111 and the lower surface 112 respectively, and the vents 115 are arranged around the window 114.

[0029] like Figure 2 As shown, the top cover plate 110 is disposed at the cavity opening 201 and closes the cavity opening 201. The lower surface 112 of the top cover plate 110 faces the reaction space 200a, so that the outer tube 120, the inner tube 130, the ultraviolet light source 140 and the induction coil 150 are located outside the lower cavity 200, and the bottom ends of the outer tube 120 and the inner tube 130 face the reaction space 200a to form a reaction cavity.

[0030] like Figure 1 and Figure 2 As shown, the inner tube body 130 is located in the outer tube body 120, the bottom end of the outer tube body 120 covers the window 114 and the plurality of vents 115, and the bottom end of the inner tube body 130 is connected to the window 114, thereby connecting the inner tube body 130 and the outer tube body 120 to the reaction chamber.

[0031] like Figure 1 and Figure 2As shown, the outer tube body 120 can be a round tube, a square tube or a tube of other shapes. The bottom end of the outer tube body 120 is disposed on the upper surface 111, and the outer tube body 120 covers the window 114 and the plurality of vents 115 with its bottom end. The bottom end of the inner tube body 130 is disposed on the upper surface 111, and the inner tube body 130 is connected to the window 114 with its bottom end. The inner tube body 130 is located in the outer tube body 120. A first gas chamber 131 is formed inside the inner tube body 130, and the first gas chamber 131 is connected to the window 114. A second gas chamber 122 is formed between the outer tube body 120 and the inner tube body 130, and the second gas chamber 122 is connected to the plurality of vents 115.

[0032] like Figure 1 and Figure 2 As shown, the ultraviolet light source 140 is disposed at the top of the inner tube 130 to emit ultraviolet light to the first gas chamber 131 to excite the first gas entering the first gas chamber 131 to an excited state. Specifically, the photoelectric assisted process chamber design also includes a spacer 160 connected to the outer tube 120 and the top of the inner tube 130, and the ultraviolet light source 140 is combined with the spacer 160. The spacer 160 has a central opening 161 and an outer cavity 162, and the outer cavity 162 is adjacent to the central opening 161 and is located outside the central opening 161. The central opening 161 is connected to the first gas chamber 131, and the outer cavity 162 is connected to the second gas chamber 122. The ultraviolet light source 140 projects ultraviolet light to the first gas chamber 131 through the central opening 161. Specifically, the frequency of the ultraviolet light is selected according to the first gas filled in the first gas chamber 131 , so that the first gas is excited by the ultraviolet light and emits excitation light with a predetermined wavelength.

[0033] See also Figure 3 and Figure 4 The figures are schematic cross-sectional views of the spacer 160 in different directions.

[0034] like Figure 3 As shown, the spacer 160 also includes at least one first air inlet pipeline 163. The first air inlet pipeline 163 extends from the outer side of the spacer 160 to the central opening 161, and the first air inlet pipeline 163 is used to connect to the first gas source S1, so that the first gas chamber 131 is connected to the first air inlet pipeline 163 through the central opening 161. The first air inlet pipeline 163 is used to receive the first gas and transport it to the first gas chamber 131. The first gas chamber 131 is used to contain the first gas, and the ultraviolet light excites the first gas into an excited state.

[0035] like Figure 4As shown, the spacer 160 further includes at least one second air inlet pipeline 164. The second air inlet pipeline 164 extends from the outer side of the spacer 160 into the outer cavity 162, and the second air inlet pipeline 164 is used to connect to the second gas source S2, so that the second gas chamber 122 is connected to the second air inlet pipeline 164 through the outer cavity 162. The second air inlet pipeline 164 is used to receive the second gas and transport it to the second gas chamber 122.

[0036] The number of first air inlet pipelines 163 can be multiple, and each of them is connected to a different first gas source S1, and each of the first gas sources S1 provides a different type of first gas. By switching the valve, a specified type of first gas can be delivered to the first gas chamber 131 according to demand. Similarly, the number of second air inlet pipelines 164 can be multiple, and each of them is connected to a different second gas source S2, and each of the second gas sources S2 provides a different type of second gas. By switching the valve, a specified type of second gas can be delivered to the second gas chamber 122 according to demand.

[0037] like Figure 1 and Figure 2 As shown, in addition, the photoelectric assisted process chamber design also includes two transparent baffles 180 for sealing the top and bottom of the inner tube 130, so that the first gas chamber 131 is closed, and the first gas chamber 131 is connected to the first gas source S1 through a first gas inlet pipe 163, so that the first gas can be filled in the first gas chamber 131. The two transparent baffles 180 can be directly combined with the top and bottom of the inner tube 130, or combined with the spacer 160 and the top cover 110, that is, the two transparent baffles 180 are respectively arranged at the central opening 161 and the window 114, and are respectively combined with the spacer 160 and the top cover 110 through the top and bottom of the inner tube 130, so as to seal the top and bottom of the inner tube 130. Specifically, the transparent baffle 180 can be glass with a vapor-deposited film on the surface of which fluoride such as magnesium fluoride (MgF2) is vapor-deposited. The materials used for the vapor-deposited films are mainly those that do not affect the penetration of ultraviolet light and have anti-reflective properties.

[0038] like Figure 1 , Figure 2 and Figure 4 As shown, the induction coil 150 surrounds the outer tube 120 to provide a time-varying magnetic flux to the outer tube 120 to induce an electric field. The second gas enters the second gas chamber 122 through the second gas inlet pipe 164. The second gas chamber 122 is used for the second gas to flow, and the second gas is ionized by the electric field to generate plasma, and is released to the bottom of the top cover plate 110 through the plurality of vents 115.

[0039] Under the action of the electric field, the plasma is ionized and accelerated toward the bottom, and is released to the bottom of the top cover 110 through the vent 115. In a specific embodiment, the two-in-one photoelectric assisted process chamber design also includes at least one coil bracket 170. The induction coil 150 is at least partially fixed to the coil bracket 170, and the coil bracket 170 is detachably fixed to the upper surface 111 of the top cover 110. The induction coil 150 is combined with the coil bracket 170 to form a detachable coil module. By removing and replacing the coil bracket 170, the induction coil 150 arranged around the outer tube 120 can be quickly replaced to generate different induced electric fields according to needs.

[0040] like Figure 5 As shown, in addition, the photoelectric assisted process chamber design may further include an adapter ring 190. The bottom surface of the adapter ring 190 matches the outer tube body 120 and the top of the inner tube body 130, or matches the spacer 160, so as to be directly or indirectly combined with the outer tube body 120 and the top of the inner tube body 130. The top surface of the adapter ring 190 matches the ultraviolet light source 140, so that the ultraviolet light source 140 can be combined with the top of the inner tube body 130 through the adapter ring 190 and / or the spacer 160. Figure 6 Specifically, let the inner diameter of the inner tube 130 be a, the inner diameter of the outer tube 120 be b, and the ratio of the inner diameter a of the inner tube to the outer diameter b of the outer tube is preferably between 0.1 and 0.6 (0.1

[0041] See also Figure 1 , Figure 2 , Figure 7 and Figure 8 As shown, in addition, the photoelectric assisted process chamber design may further include a first shower head 210. The first shower head 210 is annular, combined with the lower surface 112 of the top cover 110, surrounds the window 114, and covers the vent hole 115 to form a plasma channel 210a, and the plasma channel 210a is also connected to the reaction space 200a of the lower chamber 200. Figure 1 As shown, the second gas is ionized by the electric field to generate plasma, which is accelerated toward the bottom, passes through the vent hole 115, and enters the plasma channel 210a. Through the dispersion of the first spray head 210, it can be more evenly dispersed in the reaction space 200a of the lower chamber 200. The first spray head 210 can achieve an ion filtering effect by grounding or adjusting the plasma channel 210a so that only free ions pass through.

[0042] like Figure 1 and Figure 2 ​As shown, the top cover plate 110 includes a precursor pipeline 116, which connects the upper surface 111 and the lower surface 112. One end of the precursor pipeline 116 located on the upper surface 111 is connected to the precursor supply source S3, and one end of the precursor pipeline 116 located on the lower surface 112 is located outside the vent 115. In addition, the photoelectric assisted process chamber design also includes a second spray head 220. The second spray head 220 is also annular, combined with the lower surface 112 of the top cover plate 110, and surrounds the first spray head 210. The second spray head 220 covers one end of the precursor pipeline 116 located on the lower surface 112 to form a precursor channel 220a. The precursor channel 220a is connected to the reaction space 200a of the lower chamber 200, and is used to evenly distribute the precursor into the reaction space 200a.

[0043] The first spray head 210 and the second spray head 220 respectively provide a plasma channel 210a and a precursor channel 220a that are isolated from each other, so as to avoid the problem that the precursor contacts the plasma too early and deposits, thereby clogging the spray head. Figure 6 Specifically, let the outer diameter of the first spray head 210 be c, the outer diameter of the second spray head 220 be d, and the preferred ratio between the outer diameter c of the first spray head 210 and the outer diameter d of the second spray head 220 is between 0.3 and 0.9 (0.3 <c / d<0.9)。

[0044] like Figure 2 As shown, the photoelectric assisted process chamber design also includes a wafer carrier 230, which is located in the reaction space 200a of the lower chamber 200, and the wafer carrier 230 is arranged corresponding to the lower surface 112 of the top cover 110. The wafer carrier 230 includes a wafer carrier plate 232 and a linear actuator 234. The top surface of the wafer carrier plate 232 faces the lower surface 112 of the top cover 110, and the top surface of the wafer carrier plate 232 is used to carry a wafer so that the precursor is attached to the surface of the wafer and assisted by the excitation light and plasma to form a good atomic layer bond. In addition, the wafer carrier plate 232 can be connected to a bias power supply 240, and the bias power supply 240 is used to apply a bias current in the form of radio frequency to the wafer carrier plate 232 to generate an electric field to attract plasma or precursors and enhance the deposition effect on the wafer surface. The linear actuator 234 is connected to the bottom surface of the wafer carrier 232 to drive the wafer carrier 232 to move up and down linearly to approach or move away from the top cover 110. In addition, the lower chamber 200 may also include a stopper 202 extending in the reaction space 200a and arranged around the wafer carrier 232. In addition, a heater 236, such as an electric heating tube, may also be provided inside the wafer carrier 230 to heat the wafer so as to maintain the temperature at the temperature required for the deposition reaction.

[0045] Based on the above two-in-one photoelectric assisted process chamber design, the present invention proposes a UV-assisted and plasma-enhanced process method.

[0046] like Figure 2 and Fig. 9 As shown, the process method first provides a lower chamber 200, as shown in step S110. The lower chamber 200 has a reaction space 200a, and a chamber opening 201 is formed at the top of the lower chamber 200, and the chamber opening 201 is connected to the reaction space 200a.

[0047] like Figure 1 , Figure 2 and Fig. 9 As shown, a top cover plate 110 is provided, and the cavity opening 201 is closed by the top cover plate 110, as shown in step S120. The top cover plate 110 has an upper surface 111 and a lower surface 112, and the lower surface 112 of the top cover plate 110 faces the reaction space 200a. The top cover plate 110 further has a window 114 and a plurality of vents 115 respectively connected to the upper surface 111 and the lower surface 112, and the vents 115 are arranged around the window 114. In a specific embodiment, the window 114 and the plurality of vents 115 are located in the setting groove 113.

[0048] like Figure 1 , Figure 2 and Fig. 9 As shown, then, the outer tube body 120 and the inner tube body 130 are arranged, so that the inner tube body 130 is located in the outer tube body 120, and the bottom end of the outer tube body 120 covers the window 114 and the plurality of vents 115, and the bottom end of the inner tube body 130 is connected to the window 114, as shown in step S130. A first gas chamber 131 is formed inside the inner tube body 130, and the first gas chamber 131 is connected to the window 114; a second gas chamber 122 is formed between the outer tube body 120 and the inner tube body 130, and the second gas chamber 122 is connected to the plurality of vents 115.

[0049] like Figure 1 , Figure 2 and Fig. 9 As shown, an ultraviolet light source 140 is disposed at the top of the inner tube 130, as shown in step S140. The ultraviolet light source 140 is used to emit ultraviolet light to the first gas chamber 131 to excite the first gas entering the first gas chamber 131 into an excited state to generate excitation light.

[0050] like Figure 1 , Figure 2 and Fig. 9 As shown, an induction coil 150 is disposed around the outer tube 120, as shown in step S150. The induction coil 150 is used to provide a time-varying magnetic flux to the outer tube 120 to induce an electric field, so that the second gas is ionized to generate plasma.

[0051] like Figure 1 , Figure 2 and Fig.10 As shown, the first gas is introduced into the first gas chamber 131 , and the second gas is introduced into the second gas chamber 122 , as shown in step S160 .

[0052] like Figure 1 , Figure 2 and Fig.10 As shown, the ultraviolet light source 140 and the induction coil 150 may be selectively activated to emit excitation light and plasma through the lower surface 112 of the top cover plate 110 , as shown in step S170 .

[0053] See also Figure 2 As shown, the process method also includes providing a wafer carrier 230, which is located in the reaction space 200a of the lower chamber 200, and the wafer carrier 230 is arranged corresponding to the lower surface 112 of the top cover 110. The wafer carrier 230 includes a wafer carrier plate 232 and a linear actuator 234, the top surface of the wafer carrier plate 232 faces the lower surface 112 of the top cover 110, and the top surface of the wafer carrier plate 232 is used to carry a wafer. The linear actuator 234 is connected to the bottom surface of the wafer carrier plate 232 to drive the wafer carrier plate 232 to move up and down linearly to approach or move away from the top cover 110. The wafer carrier plate 232 can be further connected to a bias power supply 240, and the bias power supply 240 is used to apply a bias current in the form of radio frequency to the wafer carrier plate 232 to generate an electric field to attract plasma or precursors and enhance the deposition effect on the wafer surface.

[0054] See also Figure 1 , Figure 2 , Figure 7 and Figure 8 As shown, the process method also includes providing a first spray head 210, which is combined with the lower surface 112 of the top cover plate 110, surrounds the window 114, and covers the vent hole 115 to form a plasma channel 210a, and the plasma channel 210a is connected to the reaction space 200a of the lower chamber 200. The first spray head 210 is used to evenly disperse plasma into the reaction space 200a of the lower chamber 200. The process method also includes providing a second spray head 220, which is combined with the lower surface 112 of the top cover plate 110, and covers one end of the precursor pipeline 116 located on the lower surface 112 to form a precursor channel 220a. The precursor channel 220a is connected to the reaction space 200a of the lower chamber 200 for evenly distributing the precursor.

[0055] like Figure 1 , Figure 2 , Figure 3 and Figure 4As shown, the step of disposing the ultraviolet light source 140 at the top of the inner tube 130 may further include disposing a spacer 160, connected to the outer tube 120 and the top of the inner tube 130, and combining the ultraviolet light source 140 with the spacer 160. As shown in the figure, the spacer 160 has a central opening 161 and an outer cavity 162, the central opening 161 is connected to the first gas chamber 131, and the outer cavity 162 is connected to the second gas chamber 122.

[0056] like Figure 3 and Figure 4 As shown, in addition, in a specific embodiment, the manufacturing method further includes providing at least one first air inlet pipeline 163 on the spacer 160. The first air inlet pipeline 163 extends from the outer side of the spacer 160 to the central opening 161, and is used to receive the first gas and transport it to the first gas chamber 131. The spacer 160 also includes at least one second air inlet pipeline 164. The second air inlet pipeline 164 extends from the outer side of the spacer 160 into the outer cavity 162, and is used to receive the second gas and transport it to the second gas chamber 122.

[0057] In addition, if Figures 1 to 5 As shown, in the step S120 of disposing the outer tube body 120 and the inner tube body 130 , two transparent partitions 180 are also disposed to seal the top and bottom ends of the inner tube body 130 , so that the first gas chamber 131 is closed.

[0058] like Figure 1 and Figure 2 As shown, in the step of setting the induction coil 150 around the outer tube 120 , a coil bracket 170 is provided to fix the induction coil 150 on the coil bracket 170 , and the coil bracket 170 is detachably fixed to the upper surface 111 of the top cover plate 110 .

[0059] like Figure 1 , Figure 2 and Figure 5 As shown, in addition, before setting the ultraviolet light source 140, an adapter ring 190 is provided, which is combined with the ultraviolet light source 140 and combined with the top of the outer tube body 120 and the inner tube body 130, so that the ultraviolet light source 140 can be combined with the top of the inner tube body 130 through the adapter ring 190 and / or the spacer 160.

[0060] Based on the above two-in-one photoelectric assisted process chamber design and the process method of ultraviolet light assistance and plasma enhancement, the functions of ultraviolet light assistance and plasma enhancement can be combined in a single design. A single design can use ultraviolet light assistance and plasma enhancement at the same time, or can choose to implement one of ultraviolet light assistance and plasma enhancement, but there is no need to transfer wafers between different devices, which can effectively improve the efficiency of the ALD / ALE process. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the implementation of the present invention, that is, all equal changes and modifications based on the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

Claims

1. A UV-assisted and plasma-enhanced process method, characterized in that: Included are: A lower cavity is provided; wherein the lower cavity has a reaction space, and a cavity opening is opened at the top of the lower cavity; A top cover is provided; wherein the top cover has an upper surface and a lower surface, and the top cover further has a window and a plurality of vents, respectively connecting the upper surface and the lower surface, and the plurality of vents are arranged around the window; The cavity opening is closed with the top cover plate, and the lower surface is directed toward the reaction space to form a reaction cavity; An outer tube body and an inner tube body are arranged, so that the inner tube body is located in the outer tube body, the bottom end of the outer tube body covers the window and the plurality of vents, and the bottom end of the inner tube body is connected to the window; wherein a first gas chamber is formed inside the inner tube body, and the first gas chamber is connected to the window; a second gas chamber is formed between the outer tube body and the inner tube body, and the second gas chamber is connected to the plurality of vents; An ultraviolet light source is disposed at the top of the inner tube body to emit ultraviolet light to the first gas chamber; An induction coil is arranged around the outer tube body to provide the outer tube body with a magnetic flux that changes with time to induce an electric field; A first gas is introduced into the first gas chamber, and a second gas is introduced into the second gas chamber; and The ultraviolet light source and the induction coil can be selectively activated.

2. The UV-assisted and plasma-enhanced process method according to claim 1, characterized in that: It also includes providing a wafer support seat, which is located in the reaction space of the lower cavity, and the wafer support seat is arranged corresponding to the lower surface of the top cover plate; wherein the wafer support seat includes a wafer support plate and a linear actuator, the top surface of the wafer support plate faces the lower surface of the top cover plate, and the linear actuator is connected to the bottom surface of the wafer support plate to drive the wafer support plate to move up and down linearly.

3. The UV-assisted and plasma-enhanced process method according to claim 1, wherein: The method also includes providing a first spray head which is combined with the lower surface of the top cover plate and covers the plurality of vent holes.

4. The UV-assisted and plasma-enhanced process method according to claim 3, wherein: The invention also includes providing a second spray head which is combined with the lower surface of the top cover plate and covers one end of the precursor pipeline located on the lower surface.

5. The UV-assisted and plasma-enhanced process method according to claim 4, wherein: The ratio between the first spray head outer diameter and the second spray head outer diameter is between 0.3 and 0.

9.

6. The UV-assisted and plasma-enhanced process method according to claim 1, wherein: The ratio of the inner diameter of the inner tube body to the inner diameter of the outer tube body is between 0.1 and 0.

6.

7. The UV-assisted and plasma-enhanced process method according to claim 1, wherein: The step of setting the ultraviolet light source at the top end of the inner tube body also includes setting a spacer connected to the outer tube body and the top end of the inner tube body, and combining the ultraviolet light source with the spacer; wherein the spacer has a central opening and an outer cavity, the central opening is connected to the first gas chamber, and the outer cavity is connected to the second gas chamber.

8. The UV-assisted and plasma-enhanced process method according to claim 7, wherein: Also included are: At least one first air inlet pipe is disposed on the partition, extending from the outer side of the partition to the central opening, for receiving the first gas and delivering it to the first gas chamber; and At least one second air inlet pipe is disposed on the partition, extending from the outer side surface of the partition to the outer cavity, for receiving the second gas and delivering it to the second gas chamber.

9. The UV-assisted and plasma-enhanced process method according to claim 1, wherein: The step of arranging the outer tube body and the inner tube body further includes arranging two transparent partitions to seal the top and bottom ends of the inner tube body, so that the first gas chamber is closed.

10. The UV-assisted and plasma-enhanced process method according to claim 1, wherein: Before setting the ultraviolet light source, an adapter ring is provided, which is combined with the ultraviolet light source and the top ends of the outer tube body and the inner tube body, so that the ultraviolet light source is combined with the top end of the inner tube body through the adapter ring.

Images