Temperature measuring method of multiple NiCr / NiSi film thermocouples

Abstract

The invention discloses a temperature measuring method for multiple NiCr / NiSi film thermocouples. The temperature measuring method comprises the following steps: step 1, cleaning a substrate; step 2, sputtering a NiCr electrode; step 3, sputtering a NiSi electrode; step 4, sputtering a SiC protective layer; step 5, etching a Pad region; 6, connecting a compensation wire; step 7, temperature detection; according to the invention, temperature detection is carried out through a plurality of NiCr / NiSi film thermocouples, and the thermocouples are mutually independent, so that the reliability of a temperature measurement system can be improved, the environmental interference is reduced, and the accuracy of a measurement result is ensured; the thermocouple is prepared by adopting a magnetron sputtering method, thermocouple material combinations of different types can be selected according to needs, and the thermocouple is suitable for various temperature ranges, has the advantages of small size, simplicity and convenience in operation, good high-temperature stability, high oxidation resistance and stable thermoelectromotive force, and is suitable for industrial occasions with precise temperature control.

Description

Technical Field

[0001] The invention relates to the technical field of temperature detection, in particular to a temperature measurement method of multiple NiCr / NiSi thin film thermocouples. Background Art

[0002] With the rapid development of my country in the fields of deep space exploration, hypersonic vehicles, and space-to-earth shuttles, higher requirements have been put forward for the transient temperature measurement of spacecraft specimens. The surface temperature of spacecraft is crucial in ground thermal tests, and plays a key role in the analysis of thermal design mathematical models, the verification of thermal control systems, and the verification of spacecraft functional performance. Although there are currently a variety of thermal sensors used for high-temperature measurement, such as thermocouples, infrared sensors, optical sensors, etc., due to the harsh detection environment, the existing temperature measurement methods generally have the disadvantages of poor stability, limited temperature measurement range, and insufficient reliability when applied to spacecraft surface temperature detection, and cannot meet the needs of high-precision temperature detection. Therefore, a temperature measurement method using multiple NiCr / NiSi thin film thermocouples is proposed. Summary of the invention

[0003] The object of the present invention is to provide a temperature measurement method of multiple NiCr / NiSi thin film thermocouples to solve the problems raised in the above background technology.

[0004] To achieve the above object, the present invention provides the following technical solution: a temperature measurement method of a multi-NiCr / NiSi thin film thermocouple, comprising the following steps: step 1, substrate cleaning; step 2, sputtering NiCr electrode; step 3, sputtering NiSi electrode; step 4, sputtering SiC protective layer; step 5, etching Pad area; step 6, connecting compensation wire; step 7, temperature detection;

[0005] In the above step 1, the SiC substrate is cleaned to remove impurities and dirt on the surface;

[0006] In the above step 2, the SiC substrate cleaned in step 1 is taken, a Ti adhesion layer is deposited on the SiC substrate by mask patterning and magnetron sputtering, and then a NiCr electrode is deposited on the Ti adhesion layer;

[0007] In the above step 3, the SiC substrate on which the NiCr electrode is deposited in step 2 is taken, a Ti adhesion layer is deposited on the SiC substrate by mask patterning and magnetron sputtering, and then a NiSi electrode is deposited on the Ti adhesion layer;

[0008] In the above step 4, the SiC substrate on which the NiSi electrode is deposited in step 3 is taken, and a SiC protective layer is deposited on the surface of the SiC substrate, the NiCr electrode and the NiSi electrode by a magnetron sputtering method;

[0009] In the above step 5, the SiC substrate on which the SiC protective layer is deposited in step 4 is taken, and a Pad region is etched on the SiC protective layer by using mask patterning and reactive ion etching;

[0010] In the above step 6, the SiC substrate with the Pad region etched out in step 5 is taken, and the Pad region is connected to the compensation wire using a conductive silver paste to obtain a NiCr / NiSi thin film thermocouple;

[0011] In the above step 7, multiple NiCr / NiSi thin film thermocouples prepared in step 6 are taken and installed at the positions where temperature measurement is required, and the electrical signals measured by the NiCr / NiSi thin film thermocouples are transmitted to the data acquisition device through the compensation wire.

[0012] Preferably, in step one, specifically: placing the SiC substrate in alcohol for ultrasonic cleaning for 15-20 minutes, then placing the SiC substrate in acetone for ultrasonic cleaning for 10-15 minutes, then rinsing the SiC substrate with deionized water for 3-5 times, and finally using high-purity nitrogen to blow dry the SiC substrate, wherein the thickness of the SiC substrate is 400 μm.

[0013] Preferably, the step 2 specifically includes the following steps:

[0014] 2.1 Photolithography: Take the cleaned SiC substrate in step 1, evenly spin-coat photoresist on the surface of the SiC substrate, use a photolithography mask of a NiCr electrode to expose and develop the substrate coated with the photoresist, and form a pattern for depositing a NiCr electrode on the surface of the SiC substrate;

[0015] 2.2 Sputtering adhesion layer Ti: The SiC substrate with the NiCr electrode pattern is placed in the chamber of the magnetron sputtering equipment, and Ti is used as a target material to deposit a 50 nm thick Ti as an adhesion layer on the SiC substrate by magnetron sputtering;

[0016] 2.3 Sputtering electrode NiCr: Keep the chamber environment unchanged, replace the target material with NiCr, set the sputtering power to 120-180W, and sputter deposit a 400nm NiCr electrode on the Ti adhesion layer;

[0017] 2.4 Degumming: Soak the SiC substrate with sputtered NiCr electrode in degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate.

[0018] Preferably, in step 2.2, the magnetron sputtering method is specifically as follows: adjusting the vacuum degree of the chamber to 1×10 -3 -1×10 - 4Pa, high-purity argon is introduced as the sputtering gas, the argon flow rate is controlled at 20-30 sccm, Ti is used as the target material, the sputtering power is set to 100-150 W, and a 50 nm Ti adhesion layer is sputtered and deposited on the substrate.

[0019] Preferably, in step 2.3, the size of the NiCr electrode is 7500 μm×400 μm, the size of the hot node is 100 μm×400 μm, and the size of the pin is 1200 μm×1200 μm.

[0020] Preferably, the step three specifically includes the following steps:

[0021] 3.1 Photolithography: Take the SiC substrate dried in step 2.4, spin-coat photoresist on the surface of the SiC substrate, and use the photolithography mask of the NiSi electrode for exposure and development to form a pattern for depositing the NiSi electrode on the surface of the SiC substrate;

[0022] 3.2 Sputtering adhesion layer Ti: Place the SiC substrate with the NiSi electrode pattern into the chamber of the magnetron sputtering equipment, use Ti as the target material, adjust the chamber vacuum and argon gas flow rate as in step 2.2, and deposit Ti with a thickness of 50 nm as an adhesion layer on the SiC substrate by magnetron sputtering;

[0023] 3.3 Sputtering electrode NiSi: Keep the chamber environment unchanged, replace the target material with NiSi, set the sputtering power to 130-190W, and sputter deposit a 400nm NiSi electrode on the Ti adhesion layer;

[0024] 3.4 Degumming: Soak the SiC substrate with sputtered NiSi electrode in degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate.

[0025] Preferably, in step 3.3, the size of the NiSi electrode is 7500 μm×400 μm, the size of the thermal node is 100 μm×400 μm, and the size of the pin is 1200 μm×1200 μm.

[0026] Preferably, in step four, specifically: placing the SiC substrate into the chamber of the magnetron sputtering equipment, adjusting the chamber vacuum, argon gas flow rate and sputtering power as in step 2.2, using SiC as the target material, and depositing a 1 μm SiC protective layer on the surface of the SiC substrate, NiCr electrode and NiSi electrode.

[0027] Preferably, the step 5 specifically includes the following steps:

[0028] 5.1 Photolithography: Take the SiC substrate on which the SiC protective layer is deposited in step 4, spin-coat photoresist on the surface of the SiC protective layer, and use the photolithography mask corresponding to the Pad area for exposure and development to form a pattern for etching the Pad;

[0029] 5.2 Etching Pad: Place the substrate with the Pad pattern into the reaction chamber of the reactive ion etching equipment, and etch the Pad area on the SiC protective layer using reactive ion etching;

[0030] 5.3 Degumming: Soak the SiC substrate with the Pad area etched in a degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate.

[0031] Preferably, in step 5.2, the reactive ion etching method is specifically: evacuating the chamber to make the vacuum degree of the chamber reach 1×10 -3 -1×10 -4 Pa, the etching gas SF6 is introduced into the chamber, the gas flow rate is controlled at 20-50sccm, the RF power is set at 100-300W, and a Pad area is formed on the SiC protective layer.

[0032] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention performs temperature detection through multiple NiCr / NiSi thin film thermocouples, and the thermocouples are independent of each other, which can improve the reliability of the temperature measurement system, while reducing environmental interference and ensuring the accuracy of the measurement results; the thermocouple is prepared by magnetron sputtering, and different types of thermocouple material combinations can be selected as needed, and it is suitable for various temperature ranges. The thermocouple has the advantages of small size, easy operation, good high temperature stability, strong antioxidant ability, and stable thermoelectromotive force, and is suitable for industrial occasions with precise temperature control. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a flow chart of the steps of the present invention;

[0034] Figure 2 The present invention is a flow chart of the method for preparing the NiCr / NiSi thin film thermocouple. DETAILED DESCRIPTION

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] Please refer to the attached Figure 1-Attached Figure 2 , an embodiment provided by the present invention: a temperature measurement method of a multi-NiCr / NiSi thin film thermocouple, comprising the following steps: step 1, substrate cleaning; step 2, sputtering NiCr electrode; step 3, sputtering NiSi electrode; step 4, sputtering SiC protective layer; step 5, etching Pad area; step 6, connecting compensation wire; step 7, temperature detection;

[0037] In the above step 1, the SiC substrate is cleaned to remove impurities and dirt on the surface, specifically: the SiC substrate is ultrasonically cleaned in alcohol for 15-20 minutes, then the SiC substrate is ultrasonically cleaned in acetone for 10-15 minutes, then the SiC substrate is rinsed with deionized water for 3-5 times, and finally the SiC substrate is dried with high-purity nitrogen, wherein the thickness of the SiC substrate is 400 μm;

[0038] In the above step 2, the SiC substrate cleaned in step 1 is taken, a Ti adhesion layer is deposited on the SiC substrate by mask patterning and magnetron sputtering, and then a NiCr electrode is deposited on the Ti adhesion layer, which specifically includes the following steps:

[0039] 2.1 Photolithography: Take the cleaned SiC substrate in step 1, evenly spin-coat photoresist on the surface of the SiC substrate, use a photolithography mask of a NiCr electrode to expose and develop the substrate coated with the photoresist, and form a pattern for depositing a NiCr electrode on the surface of the SiC substrate;

[0040] 2.2 Sputtering Ti adhesion layer: The SiC substrate with the NiCr electrode pattern was placed in the chamber of the magnetron sputtering equipment, and Ti was used as the target material. A 50 nm thick Ti was deposited on the SiC substrate as an adhesion layer by magnetron sputtering. The magnetron sputtering method specifically includes: adjusting the vacuum degree of the chamber to 1×10 -3 -1×10 -4 Pa, high-purity argon is introduced as sputtering gas, the argon flow rate is controlled at 20-30 sccm, Ti is used as the target material, the sputtering power is set to 100-150 W, and a 50 nm Ti adhesion layer is sputtered and deposited on the substrate;

[0041] 2.3 Sputtering electrode NiCr: Keep the chamber environment unchanged, replace the target material with NiCr, set the sputtering power to 120-180W, and sputter-deposit a 400nm NiCr electrode on the Ti adhesion layer; the size of the NiCr electrode is 7500μm×400μm, the hot node size is 100μm×400μm, and the pin size is 1200μm×1200μm;

[0042] 2.4 Degumming: Soak the SiC substrate with sputtered NiCr electrode in degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate;

[0043] In the above step 3, the SiC substrate on which the NiCr electrode is deposited in step 2 is taken, a Ti adhesion layer is deposited on the SiC substrate by mask patterning and magnetron sputtering, and then a NiSi electrode is deposited on the Ti adhesion layer, which specifically includes the following steps:

[0044] 3.1 Photolithography: Take the SiC substrate dried in step 2.4, spin-coat photoresist on the surface of the SiC substrate, and use the photolithography mask of the NiSi electrode for exposure and development to form a pattern for depositing the NiSi electrode on the surface of the SiC substrate;

[0045] 3.2 Sputtering adhesion layer Ti: Place the SiC substrate with the NiSi electrode pattern into the chamber of the magnetron sputtering equipment, use Ti as the target material, adjust the chamber vacuum and argon gas flow rate as in step 2.2, and deposit Ti with a thickness of 50 nm as an adhesion layer on the SiC substrate by magnetron sputtering;

[0046] 3.3 Sputtering electrode NiSi: Keep the chamber environment unchanged, replace the target material with NiSi, set the sputtering power to 130-190W, and sputter deposit a 400nm NiSi electrode on the Ti adhesion layer; the size of the NiSi electrode is 7500μm×400μm, the hot node size is 100μm×400μm, and the pin size is 1200μm×1200μm

[0047] 3.4 Degumming: Soak the SiC substrate with sputtered NiSi electrode in degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate;

[0048] In the above step 4, the SiC substrate on which the NiSi electrode is deposited in step 3 is taken, and a SiC protective layer is deposited on the surface of the SiC substrate, the NiCr electrode and the NiSi electrode by a magnetron sputtering method, specifically: the SiC substrate is placed in a chamber of a magnetron sputtering device, the chamber vacuum, the argon gas flow rate and the sputtering power are adjusted as in step 2.2, and SiC is used as a target material to deposit a 1 μm SiC protective layer on the surface of the SiC substrate, the NiCr electrode and the NiSi electrode;

[0049] In the above step 5, the SiC substrate on which the SiC protective layer is deposited in step 4 is taken, and a Pad region is etched on the SiC protective layer by using mask patterning and reactive ion etching, which specifically includes the following steps:

[0050] 5.1 Photolithography: Take the SiC substrate on which the SiC protective layer is deposited in step 4, spin-coat photoresist on the surface of the SiC protective layer, and use the photolithography mask corresponding to the Pad area for exposure and development to form a pattern for etching the Pad;

[0051] 5.2 Etching Pad: Place the substrate with the Pad pattern into the reaction chamber of the reactive ion etching equipment, and use the reactive ion etching method to etch the Pad area on the SiC protective layer; the reactive ion etching method specifically includes: evacuating the chamber to a vacuum degree of 1×10 -3 -1×10 -4 Pa, the etching gas SF6 is introduced into the chamber, the gas flow rate is controlled at 20-50sccm, the RF power is set at 100-300W, and the Pad area is formed on the SiC protective layer;

[0052] 5.3 Degumming: Soak the SiC substrate with the Pad area etched in a degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate;

[0053] In the above step 6, the SiC substrate with the Pad region etched out in step 5 is taken, and the Pad region is connected to the compensation wire using a conductive silver paste to obtain a NiCr / NiSi thin film thermocouple;

[0054] In the above step 7, multiple NiCr / NiSi thin film thermocouples prepared in step 6 are taken and installed at the positions where temperature measurement is required, and the electrical signals measured by the NiCr / NiSi thin film thermocouples are transmitted to the data acquisition device through the compensation wire.

[0055] Based on the above, the advantage of the present invention is that when the invention is used, first, two Ti adhesion layers are deposited on the SiC substrate by mask patterning combined with magnetron sputtering technology, and then NiCr electrodes and NiSi electrodes are respectively deposited on the two Ti adhesion layers, and then a SiC protective layer is deposited on the surface of the SiC substrate, the NiCr electrode and the NiSi electrode by magnetron sputtering technology, and a Pad area is etched on the SiC protective layer by mask patterning combined with reactive ion etching technology, and finally the electrode is connected to the compensation wire by conductive silver paste to obtain a NiCr / NiSi thin film thermocouple, and the NiCr / NiSi thin film thermocouple is used for temperature detection. The prepared NiCr / NiSi thin film thermocouple can stably measure temperature in the temperature range of -40°C-1000°C, and has good oxidation resistance, is not easy to form an oxide layer in a high temperature environment, has a long service life, and is suitable for high-precision and rapid temperature measurement in harsh environments.

[0056] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. A temperature measurement method for multiple NiCr / NiSi thin film thermocouples, comprising the following steps: Step 1, substrate cleaning; Step 2, sputtering NiCr electrode; Step 3, sputtering NiSi electrode; Step 4, sputtering SiC protective layer; Step 5, etching Pad area; Step 6, connecting compensation wire; Step 7, temperature detection; It is characterized in that: In the above step 1, the SiC substrate is cleaned to remove impurities and dirt on the surface; In the above step 2, the SiC substrate cleaned in step 1 is taken, a Ti adhesion layer is deposited on the SiC substrate by mask patterning and magnetron sputtering, and then a NiCr electrode is deposited on the Ti adhesion layer; In the above step 3, the SiC substrate on which the NiCr electrode is deposited in step 2 is taken, a Ti adhesion layer is deposited on the SiC substrate by mask patterning and magnetron sputtering, and then a NiSi electrode is deposited on the Ti adhesion layer; In the above step 4, the SiC substrate on which the NiSi electrode is deposited in step 3 is taken, and a SiC protective layer is deposited on the surface of the SiC substrate, the NiCr electrode and the NiSi electrode by a magnetron sputtering method; In the above step 5, the SiC substrate on which the SiC protective layer is deposited in step 4 is taken, and a Pad region is etched on the SiC protective layer by using mask patterning and reactive ion etching; In the above step 6, the SiC substrate with the Pad region etched out in step 5 is taken, and the Pad region is connected to the compensation wire using a conductive silver paste to obtain a NiCr / NiSi thin film thermocouple; In the above step 7, multiple NiCr / NiSi thin film thermocouples prepared in step 6 are taken and installed at the positions where temperature measurement is required, and the electrical signals measured by the NiCr / NiSi thin film thermocouples are transmitted to the data acquisition device through the compensation wire.

2. The temperature measurement method of a multi-NiCr / NiSi thin film thermocouple according to claim 1, characterized in that: In the step 1, specifically: the SiC substrate is placed in alcohol for ultrasonic cleaning for 15-20 minutes, then the SiC substrate is placed in acetone for ultrasonic cleaning for 10-15 minutes, then the SiC substrate is rinsed with deionized water for 3-5 times, and finally the SiC substrate is blown dry with high-purity nitrogen, wherein the thickness of the SiC substrate is 400 μm.

3. The temperature measurement method of a multi-NiCr / NiSi thin film thermocouple according to claim 1, characterized in that: The step 2 specifically includes the following steps: 2.1 Photolithography: Take the cleaned SiC substrate in step 1, evenly spin-coat photoresist on the surface of the SiC substrate, use a photolithography mask of a NiCr electrode to expose and develop the substrate coated with the photoresist, and form a pattern for depositing a NiCr electrode on the surface of the SiC substrate; 2.2 Sputtering adhesion layer Ti: The SiC substrate with the NiCr electrode pattern is placed in the chamber of the magnetron sputtering equipment, and Ti is used as a target material to deposit a 50 nm thick Ti as an adhesion layer on the SiC substrate by magnetron sputtering; 2.3 Sputtering electrode NiCr: Keep the chamber environment unchanged, replace the target material with NiCr, set the sputtering power to 120-180W, and sputter deposit a 400nm NiCr electrode on the Ti adhesion layer; 2.4 Degumming: Soak the SiC substrate with sputtered NiCr electrode in degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate.

4. The temperature measurement method of a multi-NiCr / NiSi thin film thermocouple according to claim 3, characterized in that: In step 2.2, the magnetron sputtering method is specifically as follows: adjusting the vacuum degree of the chamber to 1×10 -3 -1×10 -4 Pa, high-purity argon is introduced as the sputtering gas, the argon flow rate is controlled at 20-30 sccm, Ti is used as the target material, the sputtering power is set to 100-150 W, and a 50 nm Ti adhesion layer is sputtered and deposited on the substrate.

5. The temperature measurement method of a multi-NiCr / NiSi thin film thermocouple according to claim 3, characterized in that: In step 2.3, the size of the NiCr electrode is 7500 μm×400 μm, the size of the hot junction is 100 μm×400 μm, and the size of the pin is 1200 μm×1200 μm.

6. The temperature measurement method of multiple NiCr / NiSi thin film thermocouples according to claim 1, characterized in that: The step three specifically includes the following steps: 3.1 Photolithography: Take the SiC substrate dried in step 2.4, spin-coat photoresist on the surface of the SiC substrate, and use the photolithography mask of the NiSi electrode for exposure and development to form a pattern for depositing the NiSi electrode on the surface of the SiC substrate; 3.2 Sputtering adhesion layer Ti: Place the SiC substrate with the NiSi electrode pattern into the chamber of the magnetron sputtering equipment, use Ti as the target material, adjust the chamber vacuum and argon gas flow rate as in step 2.2, and deposit Ti with a thickness of 50 nm as an adhesion layer on the SiC substrate by magnetron sputtering; 3.3 Sputtering electrode NiSi: Keep the chamber environment unchanged, replace the target material with NiSi, set the sputtering power to 130-190W, and sputter deposit a 400nm NiSi electrode on the Ti adhesion layer; 3.4 Degumming: Soak the SiC substrate with sputtered NiSi electrode in degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate.

7. The temperature measurement method of multiple NiCr / NiSi thin film thermocouples according to claim 6, characterized in that: In step 3.3, the size of the NiSi electrode is 7500 μm×400 μm, the size of the thermal node is 100 μm×400 μm, and the size of the pin is 1200 μm×1200 μm.

8. The temperature measurement method of multiple NiCr / NiSi thin film thermocouples according to claim 1, characterized in that: In the step 4, specifically: placing the SiC substrate into the chamber of the magnetron sputtering equipment, adjusting the chamber vacuum, argon gas flow rate and sputtering power as in step 2.2, using SiC as the target material, and depositing a 1 μm SiC protective layer on the surface of the SiC substrate, NiCr electrode and NiSi electrode.

9. The temperature measurement method of multiple NiCr / NiSi thin film thermocouples according to claim 1, characterized in that: The step 5 specifically includes the following steps: 5.1 Photolithography: Take the SiC substrate on which the SiC protective layer is deposited in step 4, spin-coat photoresist on the surface of the SiC protective layer, and use the photolithography mask corresponding to the Pad area for exposure and development to form a pattern for etching the Pad; 5.2 Etching Pad: Place the substrate with the Pad pattern into the reaction chamber of the reactive ion etching equipment, and etch the Pad area on the SiC protective layer using reactive ion etching; 5.3 Degumming: Soak the SiC substrate with the Pad area etched in a degumming solution to remove the photoresist, then rinse the SiC substrate with deionized water to remove the residual degumming solution, and then use high-purity nitrogen to blow dry the SiC substrate.

10. The temperature measurement method of multiple NiCr / NiSi thin film thermocouples according to claim 9, characterized in that: In step 5.2, the reactive ion etching method is specifically as follows: the chamber is evacuated to a vacuum level of 1×10 -3 -1×10 -4 Pa, the etching gas SF6 is introduced into the chamber, the gas flow rate is controlled at 20-50sccm, the RF power is set at 100-300W, and a Pad area is formed on the SiC protective layer.

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