High and low temperature compensation band-gap reference source circuit and conversion device

Abstract

The invention provides a high-low temperature compensation band-gap reference source circuit and a conversion device, and the circuit comprises a low-temperature mirror image unit, a low-temperature adjustment unit, a high-temperature mirror image unit, a high-temperature adjustment unit, an operational amplifier unit, and a reference adjustment unit. The low-temperature adjusting unit and the low-temperature mirror image unit generate low-temperature mirror image currents based on first currents of the first transistor at different temperatures, and the high-temperature adjusting unit and the high-temperature mirror image unit generate high-temperature mirror image currents based on the second transistor at different temperatures when the temperature is higher than a preset temperature threshold. The reference adjusting unit sends a reference voltage, a first adjusting voltage and a second adjusting voltage to the operational amplifier unit based on the high-temperature mirror current and / or the low-temperature mirror current, and the operational amplifier unit outputs a stable reference source voltage based on the reference voltage, the first adjusting voltage and the second adjusting voltage. By means of the structure, stable reference source voltage is output at different temperatures, the circuit structure is simple, and power consumption is low.

Description

Technical Field

[0001] The present application relates to the field of semiconductor integrated circuit technology, and in particular to a high and low temperature compensation bandgap reference source circuit and a conversion device. Background Art

[0002] High and low temperature compensation bandgap reference circuits are widely used in the field of high-precision system design. In analog and digital integrated conversion circuits, high and low temperature compensation bandgap reference circuits can provide a stable voltage reference to ensure that the conversion error of the conversion circuit is minimized under different temperature conditions.

[0003] Traditional high and low temperature compensation bandgap reference circuits usually use first-order temperature compensation and second-order curvature temperature compensation. Among them, the first-order temperature compensation is a linear compensation for the temperature coefficient of the PN junction between the base and emitter of the transistor, and the second-order curvature temperature compensation is based on the first-order temperature compensation, adding the square term compensation for the temperature coefficient in the PN junction between the base and emitter of the transistor.

[0004] However, the circuit structure using the first-order temperature compensation and the second-order curvature temperature compensation is complex, has high power consumption and a large area. Summary of the invention

[0005] The purpose of this application is to provide a high and low temperature compensation bandgap reference source circuit and conversion device to address the deficiencies in the above-mentioned prior art, so as to solve the problems of complex circuits, high power consumption and large area in the prior art.

[0006] To achieve the above objectives, the technical solutions adopted in this application are as follows: In a first aspect, the present application provides a high-low temperature compensation bandgap reference source circuit, comprising: a low temperature compensation module, a high temperature compensation module and a reference module, wherein the low temperature compensation module comprises a low temperature mirror unit and a low temperature adjustment unit, the high temperature compensation module comprises a high temperature mirror unit and a high temperature adjustment unit, the reference module comprises an operational amplifier unit and a reference adjustment unit, the low temperature adjustment unit comprises a first transistor, and the high temperature adjustment unit comprises a second transistor; The first end of the low temperature mirror unit is used to access the power signal, the second end of the low temperature mirror unit is connected to the first end of the reference adjustment unit, and the third end of the low temperature mirror unit is connected to the first end of the low temperature adjustment unit; The second end of the low temperature adjustment unit is used to receive the power signal, and the ground end of the low temperature adjustment unit is grounded; The first end of the high temperature mirror unit is used to access the power signal, the second end of the high temperature mirror unit is connected to the second end of the reference adjustment unit, the third end of the high temperature mirror unit is connected to the first end of the high temperature adjustment unit, the fourth end of the high temperature mirror unit is connected to the second end of the high temperature adjustment unit, and the ground end of the high temperature adjustment unit is grounded; The third end of the reference adjustment unit is connected to the first end of the operational amplifier unit, the fourth end of the reference adjustment unit is connected to the second end of the operational amplifier unit, and the ground end of the reference adjustment unit is grounded; The third terminal of the operational amplifier unit is used to access the power supply signal, the fourth terminal of the operational amplifier unit is used as the output port of the high and low temperature compensation bandgap reference source circuit, and the ground terminal of the operational amplifier unit is grounded; The low-temperature regulation unit is used to generate a low-temperature regulation current based on a first current generated by the first transistor at different temperatures, the low-temperature mirror unit is used to send a low-temperature mirror current to the reference regulation unit according to the low-temperature regulation current, the high-temperature regulation unit is used to generate a high-temperature regulation current at different temperatures based on the second transistor when the temperature is higher than a preset temperature threshold, the high-temperature mirror unit is used to send a high-temperature mirror current to the reference regulation unit according to the high-temperature regulation current, and the reference regulation unit is used to send a reference voltage, a first regulation voltage, and a second regulation voltage to the operational amplifier unit based on the high-temperature mirror current and / or the low-temperature mirror current, so that the operational amplifier unit outputs a stable reference source voltage based on the reference voltage, the first regulation voltage, and the second regulation voltage.

[0007] Optionally, the reference adjustment unit includes: a first resistor, a second resistor and a third transistor; The first end of the first resistor is connected to the first end of the operational amplifier unit, and the second end of the first resistor is respectively connected to the collector of the third transistor, the base of the third transistor and the second end of the low-temperature mirror unit; The base of the third transistor is also connected to the first end of the operational amplifier unit, and the emitter of the third transistor is respectively connected to the second end of the high-temperature mirror unit and the first end of the second resistor; A second terminal of the second resistor is grounded.

[0008] Optionally, the low temperature adjustment unit further includes: a third resistor; The base of the first transistor is connected to the third end of the low-temperature mirror unit, the collector of the first transistor is used to access the power signal, the emitter of the third transistor is connected to the first end of the third resistor, and the other end of the third resistor is grounded.

[0009] Optionally, the low-temperature mirror unit includes: a first device group, a second MOS tube and a fourth resistor, wherein the first device group includes at least one first MOS tube; The source of each of the first MOS tubes and the source of the second MOS tube are used to access the power signal, the gate of each of the first MOS tubes is connected to the gate and drain of the second MOS tube respectively, and the drain of each of the first MOS tubes is connected to the second end of the first resistor; The drain of the second MOS transistor is also connected to the first end of the fourth resistor, and the other end of the fourth resistor is connected to the base of the first transistor; The low-temperature mirror unit is used to perform an integer-multiple mirror conversion on the low-temperature regulating current based on the number of first MOS tubes in the first device group to generate a low-temperature mirror current.

[0010] Optionally, the high temperature adjustment unit further includes: a fifth resistor; The collector of the second transistor is connected to the third end of the high-temperature mirror unit, the emitter of the second transistor is connected to the first end of the fifth resistor, the base of the second transistor is connected to the fourth end of the high-temperature mirror unit, and the collector current of the second transistor is proportional to the base voltage; The other end of the fifth resistor is grounded.

[0011] Optionally, the high temperature mirror unit includes: a third MOS tube, a second device group, a fifth MOS tube and a sixth resistor, and the second device group includes at least one fourth MOS tube; The source of the third MOS tube, the source of each of the fourth MOS tubes and the source of the fifth MOS tube are respectively used to access the power signal; The gate of the third MOS tube is respectively connected to the gates of each fourth MOS tube, the gate of the fifth MOS tube and the drain of the third MOS tube, and the drain of the third MOS tube is also connected to the collector of the second transistor; The drain of each of the fourth MOS transistors is connected to the first end of the second resistor, and the drain of the fifth MOS transistor is connected to the base of the second transistor and the first end of the sixth resistor respectively; The other end of the sixth resistor is grounded; The high temperature mirror unit is used to perform an integer multiple mirror conversion on the low temperature regulation current based on the number of fourth MOS tubes in the second device group to generate a high temperature mirror current.

[0012] Optionally, the operational amplifier unit includes: a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, an operational amplifier, a fourth transistor, a fifth transistor and a sixth MOS tube; The first end of the seventh resistor and the first end of the eighth resistor are used to access the power signal, the second end of the seventh resistor is respectively connected to the first input end of the operational amplifier and the collector of the fourth transistor, and the second end of the eighth resistor is respectively connected to the second input end of the operational amplifier and the collector of the fifth transistor; The base of the fourth transistor is connected to the third end of the reference adjustment unit, the base of the fifth transistor is connected to the first end of the ninth resistor, the second end of the ninth resistor is respectively connected to the source of the sixth MOS tube and the fourth end of the reference adjustment unit, and is connected to the output port of the high and low temperature compensation bandgap reference source circuit, the emitter of the fourth transistor and the emitter of the fifth transistor are both connected to the first end of the eleventh resistor, and the second end of the eleventh resistor is grounded; The output end of the operational amplifier is connected to the gate of the sixth MOS tube, the drain of the sixth MOS tube is connected to the second end of the tenth resistor, and the first end of the tenth resistor is connected to the power signal.

[0013] Optionally, the high and low temperature compensation bandgap reference source circuit further includes: a startup module; The first end of the startup module is used to receive the power signal; The second end of the startup module is connected to the fifth end of the operational amplifier unit, the third end of the startup module is connected to the fourth end of the operational amplifier unit, and the grounding end of the startup module is grounded.

[0014] Optionally, the startup module includes: a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a seventh MOS transistor, an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor and a sixth transistor; The first end of the twelfth resistor is connected to the power signal, and the second end of the twelfth resistor is respectively connected to the drain of the seventh MOS tube, the gate of the seventh MOS tube, and the gate of the eighth MOS tube; The source of the seventh MOS tube is respectively connected to the first end of the thirteenth resistor, the gate of the eleventh MOS tube and the gate of the twelfth MOS tube; The drain of the eighth MOS tube is connected to the drain of the ninth MOS tube and the drain of the twelfth MOS tube respectively, and the source of the eighth MOS tube is connected to the fifth end of the operational amplifier unit; The source of the ninth MOS tube and the source of the tenth MOS tube are respectively connected to the power signal, the gate of the ninth MOS tube is respectively connected to the gate and drain of the tenth MOS tube, and the drain of the tenth MOS tube is also connected to the collector of the sixth transistor; The emitter of the sixth transistor is connected to the first end of the fourteenth resistor, and the base of the sixth transistor is connected to the fourth end of the operational amplifier unit; A second end of the fourteenth resistor is grounded; The second end of the thirteenth resistor is connected to the drain of the eleventh MOS transistor, and the source of the eleventh MOS transistor and the source of the twelfth MOS transistor are grounded.

[0015] In a second aspect, the present application provides a conversion device, which includes the high and low temperature compensation bandgap reference source circuit as described in the first aspect.

[0016] The beneficial effects of the present application are as follows: the present application provides a low-temperature regulation current through a low-temperature regulation unit having only one transistor, and provides a high-temperature regulation current through a high-temperature regulation unit having only one transistor when the ambient temperature is higher than a preset temperature threshold, so that the reference module can output a stable reference source voltage in various temperature scenarios. Since the low-temperature regulation unit and the high-temperature regulation unit only use one transistor, the circuit structure is simple and the power consumption is low, and the high-temperature regulation unit only generates a high-temperature regulation current when the ambient temperature is higher than a preset temperature threshold, thereby saving power consumption and having a strong ability to resist changes in factors such as process voltage and temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 This is a schematic diagram of a reference source voltage waveform of a first-order bandgap reference source circuit provided in an embodiment of the present application; Figure 2 It is a structural schematic diagram of a high and low temperature compensation bandgap reference source circuit provided in an embodiment of the present application; Figure 3 This is a schematic diagram of a high and low temperature regulating current waveform provided by the present application; Figure 4 It is a structural schematic diagram of another high and low temperature compensation bandgap reference source current provided in an embodiment of the present application; Figure 5 is a waveform diagram of a compensated reference source voltage provided in an embodiment of the present application; Figure 6 It is a structural schematic diagram of another high and low temperature compensation bandgap reference source circuit provided in an embodiment of the present application; Figure 7It is a structural diagram of a startup module provided in an embodiment of the present application. DETAILED DESCRIPTION

[0019] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of explanation and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn in real proportion. The flowchart used in this application shows the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowchart can be implemented out of sequence, and the steps without logical context can be reversed in order or implemented simultaneously. In addition, those skilled in the art can add one or more other operations to the flowchart under the guidance of the content of the present application, or remove one or more operations from the flowchart.

[0020] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0021] It should be noted that the term "comprising" will be used in the embodiments of the present application to indicate the existence of the features declared thereafter, but does not exclude the addition of other features.

[0022] Conventional high and low temperature compensation bandgap reference circuits usually use first-order temperature compensation and second-order curvature temperature compensation. However, the circuits using first-order temperature compensation and second-order curvature temperature compensation are complex in structure, high in power consumption and large in area.

[0023] Based on this, the present application proposes a high-low temperature compensation bandgap reference source circuit, which includes an operational amplifier unit, a reference adjustment unit, a low temperature adjustment unit, a low temperature mirror unit, a high temperature adjustment unit and a high temperature mirror unit. The low temperature adjustment unit includes a first transistor, and the high temperature adjustment unit includes a second transistor. The low temperature adjustment unit generates a low temperature adjustment current based on the first transistor, and the low temperature mirror unit sends a low temperature mirror current to the reference adjustment unit according to the low temperature adjustment current. The high temperature adjustment unit generates a high temperature adjustment current based on the second transistor when the temperature is higher than a preset temperature threshold, and the high temperature mirror unit sends a high temperature mirror current to the reference adjustment unit according to the high temperature adjustment current. The reference adjustment unit and the operational amplifier unit output a stable reference source voltage based on the low temperature mirror current and the high temperature mirror current. The present application provides a low temperature adjustment current through a low temperature adjustment unit with only one transistor, and provides a high temperature adjustment current through a high temperature adjustment unit with only one transistor when the ambient temperature reaches a preset temperature threshold, so that the reference module can output a stable reference source voltage in various temperature scenarios. Since the low temperature adjustment unit and the high temperature adjustment unit only use one transistor, the circuit structure is simple and the power consumption is low, and the high temperature adjustment unit only generates a high temperature adjustment current when the ambient temperature is higher than the preset temperature threshold, so that power consumption is saved and the ability to resist changes in factors such as process voltage and temperature is strong.

[0024] Next, the working principle of the bandgap reference circuit is introduced. The bandgap reference adds voltages with positive and negative temperature coefficients to generate a temperature-independent voltage reference. Specifically, the base-emitter voltage V BE The relationship with the ambient temperature is as follows (1): (1) Among them, V BE is the base-emitter voltage, V g0 is the PN junction diode voltage when extrapolated to absolute zero, T is the absolute temperature, V T is the thermal voltage, t is the temperature dependence of the current flowing through the transistor, n is the transistor proportionality factor, I s is the saturation current, I REF is the parameter current. Where VT=kT / q, k is the Boltzmann constant, in units of Joule / Kelvin, q is the electron charge, unit is coulomb.

[0025] It can be seen from the above formula (1) that as the temperature increases, V BE It shows a downward trend, that is, V BE Has a negative temperature coefficient. If two bipolar transistors operate at different current densities, the V BE The difference △V BEProportional to absolute temperature and has a positive temperature coefficient.

[0026] Based on this, if the two bipolar transistors have the same size and different current densities, a △V with a positive temperature coefficient is generated. BE , V with a negative temperature coefficient BE and positive temperature coefficient △V BE Linear superposition is performed and V BE and △V BE Assign weight coefficient a and weight coefficient b respectively, and obtain the reference source voltage as shown in the following formula (2): V REF =aV BE +b△V BE (2) By using formula (2) to cancel out the positive and negative temperature coefficients, we can obtain a first-order reference source voltage V that is independent of temperature. REF .

[0027] However, the V BE It is nonlinear, so it is difficult for the first-order bandgap reference circuit to completely eliminate the influence of the high-order temperature coefficient. The reference voltage V REF The waveform is a parabola with an opening downward, such as Figure 1 As shown, Figure 1 It is a schematic diagram of a reference source voltage waveform of a first-order bandgap reference source circuit provided in an embodiment of the present application.

[0028] Therefore, the present invention uses a low temperature compensation module and a high temperature compensation module of a high and low temperature compensation bandgap reference source circuit to respectively Figure 1 Specifically, in the low temperature part, V REF As the temperature increases, V increases, so it is necessary to superimpose a compensation current with a negative temperature coefficient to offset the temperature coefficient at low temperatures. REF It decreases with increasing temperature, so a compensation current with a positive temperature coefficient needs to be superimposed to offset the temperature coefficient at high temperature.

[0029] Next, refer to Figure 2 The specific structure and function of the high and low temperature compensation bandgap reference source circuit proposed in this application are introduced. Figure 2 It is a structural schematic diagram of a high and low temperature compensation bandgap reference source circuit provided in an embodiment of the present application.

[0030] The high and low temperature compensation bandgap reference source circuit includes: a low temperature compensation module 2, a high temperature compensation module 3 and a reference module 1, the low temperature compensation module 2 includes a low temperature mirror unit 30 and a low temperature adjustment unit 20, the high temperature compensation module 3 includes a high temperature mirror unit 50 and a high temperature adjustment unit 40, the reference module 1 includes an operational amplifier unit 60 and a reference adjustment unit 10, the low temperature adjustment unit 20 includes a first transistor Q1, and the high temperature adjustment unit 40 includes a second transistor Q2.

[0031] Optionally, the first end of the low temperature mirror unit 30 is used to access the power signal VDD, the second end of the low temperature mirror unit 30 is connected to the first end of the reference adjustment unit 10, and the third end of the low temperature mirror unit 30 is connected to the first end of the low temperature adjustment unit 20.

[0032] Optionally, the second end of the low temperature adjustment unit 20 is used to access the power signal VDD, and the ground end of the low temperature adjustment unit 20 is grounded.

[0033] Optionally, the first end of the high-temperature mirror unit 50 is used to access the power supply signal VDD, the second end of the high-temperature mirror unit 50 is connected to the second end of the reference adjustment unit 10, the third end of the high-temperature mirror unit 50 is connected to the first end of the high-temperature adjustment unit 40, the fourth end of the high-temperature mirror unit 50 is connected to the second end of the high-temperature adjustment unit 40, the ground end of the high-temperature mirror unit 50 is grounded, and the ground end of the high-temperature adjustment unit 40 is grounded.

[0034] Optionally, the third end of the reference adjustment unit 10 is connected to the first end of the operational amplifier unit 60 , the fourth end of the reference adjustment unit 10 is connected to the second end of the operational amplifier unit 60 , and the ground end of the reference adjustment unit 10 is grounded.

[0035] Optionally, the third terminal of the operational amplifier unit 60 is used to access the power signal VDD, the fourth terminal of the operational amplifier unit 60 is used as the output port of the high and low temperature compensation bandgap reference source circuit, and the ground terminal of the operational amplifier unit 60 is grounded.

[0036] Optionally, the low temperature regulation unit 20 is used to generate a low temperature regulation current based on a first current generated by the first transistor Q1 at different temperatures, the low temperature mirror unit 30 is used to send a low temperature mirror current to the reference regulation unit 10 according to the low temperature regulation current, the high temperature regulation unit 40 is used to generate a high temperature regulation current at different temperatures based on the second transistor Q2 when the temperature is higher than a preset temperature threshold, the high temperature mirror unit 50 is used to send a high temperature mirror current to the reference regulation unit 10 according to the high temperature regulation current, and the reference regulation unit 10 is used to send a reference voltage, a first regulation voltage, and a second regulation voltage to the operational amplifier unit 60 based on the high temperature mirror current and / or the low temperature mirror current, so that the operational amplifier unit 60 outputs a stable reference source voltage based on the reference voltage, the first regulation voltage, and the second regulation voltage.

[0037] Specifically, the V of the first transistor Q1 in the low temperature adjustment unit 20 is BE It has a negative temperature coefficient, that is, the higher the temperature, the lower the output regulation current. BE Based on the negative temperature coefficient of the first current, a low-temperature regulating current is generated. The low-temperature regulating current is mirror-converted by the low-temperature mirror unit 30 to generate a low-temperature mirror current, which is then superimposed on the current generated by the reference regulating unit 10 to generate a first regulating voltage.

[0038] The first current may be the collector current of the first transistor Q1. The low-temperature regulating current may be the base current of the first transistor Q1. The low-temperature mirror unit 30 mirrors the base current of the first transistor Q1 into an integer multiple and copies it as the low-temperature mirror current and sends it to the reference regulating unit 10, and the reference regulating unit 10 generates the first regulating voltage.

[0039] When the ambient temperature is low and does not reach the preset temperature threshold, the second transistor Q2 in the high temperature adjustment unit 40 is not turned on, so no high temperature adjustment current is generated, and no second adjustment voltage is generated. Therefore, when the ambient temperature is low, only the current of the low temperature part is compensated to offset the temperature coefficient at low temperature.

[0040] When the ambient temperature rises to a value greater than the preset temperature threshold, the second transistor Q2 in the high temperature adjustment unit 40 is turned on. As the temperature rises, V BE The high temperature regulating current decreases, and the high temperature regulating current increases. After the high temperature mirror unit 50 performs an integer multiple mirror copy on the high temperature regulating current to generate a high temperature mirror current, it is superimposed on the current generated by the reference regulating unit 10 to generate a second regulating voltage.

[0041] In a high temperature environment, the low temperature adjustment current value output by the low temperature adjustment unit 20 is low and tends to be stable, and will not bring additional impact to the high temperature compensation part.

[0042] The reference adjustment unit 10 can generate a reference voltage, and the reference voltage can be sent to the operational amplifier unit 60 to obtain an uncompensated first-order bandgap reference voltage. Therefore, the reference adjustment unit 10 can generate a first adjustment voltage and / or a second adjustment voltage based on the high-temperature mirror current and / or the low-temperature mirror current, and then send the reference voltage, the first adjustment voltage, and the second adjustment voltage to the operational amplifier unit 60.

[0043] The operational amplifier unit 60 is used to add the received voltages, so the operational amplifier unit 60 adds the reference voltage, the first adjustment voltage and the second adjustment voltage sent by the reference adjustment unit 10 to output a compensated stable reference source voltage.

[0044] It is worth noting that Figure 3This is a schematic diagram of a high and low temperature regulation current waveform provided by this application. Figure 3 As shown, the low temperature regulation current decreases with the increase of temperature, the high temperature regulation current increases with the increase of temperature, and the high temperature regulation current is 0 when the ambient temperature is lower than the preset ambient threshold, and no compensation is performed. Figure 1 and Figure 3 As shown, the low temperature compensation module 2 and the high temperature compensation module 3 can compensate the low temperature part and the voltage of the low temperature part of the first-order bandgap reference source circuit, so that the high and low temperature compensation bandgap reference source circuit can output a stable reference source voltage at different temperatures.

[0045] In this embodiment, the low temperature adjustment unit of the high and low temperature compensation bandgap reference source circuit generates a low temperature adjustment current based on the first current generated by the first transistor at different temperatures, and the low temperature mirror unit 30 sends the low temperature mirror current to the reference adjustment unit according to the low temperature adjustment current. The high temperature adjustment unit generates a high temperature adjustment current based on the second transistor at different temperatures when the temperature is higher than the preset temperature threshold, and the high temperature mirror unit generates a high temperature mirror current to the reference adjustment unit according to the high temperature adjustment current. The reference adjustment unit sends a first adjustment voltage and a second adjustment voltage to the operational amplifier unit based on the low temperature mirror current and / or the high temperature mirror current, so that the operational amplifier unit outputs a stable reference source voltage based on the first adjustment voltage and the second adjustment voltage. The present application provides a low temperature adjustment current through a low temperature adjustment unit with only one transistor, and provides a high temperature adjustment current through a high temperature adjustment unit with only one transistor when the ambient temperature is higher than the preset temperature threshold, so that the reference module can output a stable reference source voltage in various temperature scenarios. Since the low temperature adjustment unit and the high temperature adjustment unit only use one transistor, the circuit structure is simple and the power consumption is low, and the high temperature adjustment unit only generates a high temperature adjustment current when the ambient temperature is higher than the preset temperature threshold, so that power consumption is saved and the ability to resist changes in factors such as process voltage and temperature is strong.

[0046] Next, refer to Figure 4 The specific structures of the high and low temperature compensation bandgap reference source circuits are introduced respectively. Figure 4 It is a structural schematic diagram of another high and low temperature compensation bandgap reference source current provided in an embodiment of the present application.

[0047] As an optional implementation, the reference adjustment unit 10 includes: a first resistor R1, a second resistor R2 and a third transistor Q3.

[0048] Optionally, the first end of the first resistor R1 is connected to the first end of the operational amplifier unit 60 , and the second end of the first resistor R1 is respectively connected to the collector of the third transistor Q3 , the base of the third transistor Q3 and the second end of the low-temperature mirror unit 30 .

[0049] Optionally, the base of the third transistor Q3 is also connected to the first end of the operational amplifier unit 60 , and the emitter of the third transistor Q3 is respectively connected to the second end of the high temperature mirror unit 50 and the first end of the second resistor R2 .

[0050] Optionally, the second end of the second resistor R2 is grounded.

[0051] Specifically, the two ends of the first resistor R1 can be connected to the bases of two transistors of the same material respectively, and different currents flow through them, so that the voltage across the first resistor R1 is a first voltage difference. Since the base-emitter voltage of the transistor has a negative temperature coefficient, the difference between the two voltages with negative temperature coefficients has a positive temperature coefficient. Therefore, the current flowing through the two ends of the first resistor R1 has a positive temperature coefficient.

[0052] The base-emitter voltage of the third transistor Q3 has a negative temperature coefficient.

[0053] Optionally, the sum of the first resistor R1 and the second resistor R2 may be calculated, and the ratio of the sum to the first resistor R1 may be used as the weight coefficient of the first voltage difference, and 1 may be used as the weight coefficient of the base-emitter voltage of the third transistor Q3.

[0054] Therefore, and The reference voltage is sent to the operational amplifier unit 60, and the operational amplifier unit 60 adds the reference voltage to obtain the reference source voltage, which is a first-order bandgap reference voltage without temperature compensation. For example, the reference source voltage can be expressed as the following formula (3): (3) in, is the reference source voltage, is the base-emitter voltage of the third transistor Q3, The voltage across the first resistor R1 is the first voltage difference.

[0055] It is worth noting that the first-order bandgap reference voltage can be adjusted by adjusting the resistance values ​​of the first resistor R1 and the second resistor R2. However, the first-order bandgap reference voltage has not been subjected to high and low temperature compensation and cannot directly output a stable voltage. Therefore, it is necessary to compensate the reference source voltage through the high temperature compensation module 3 and the low temperature compensation module 2 to stabilize the reference source voltage.

[0056] In this embodiment, a reference voltage is generated by the first resistor, the second resistor and the third transistor, and a first-order bandgap reference voltage can be obtained by adding the reference voltage through the operational amplifier unit, so that the high and low temperature compensation bandgap reference source circuit outputs an uncompensated reference source voltage.

[0057] Continue to refer to Figure 4, the low temperature adjustment unit 20 includes a first transistor Q1 and a third resistor R3.

[0058] Optionally, the base of the first transistor Q1 is connected to the third end of the low-temperature mirror unit 30, the collector of the first transistor Q1 is used to access the power signal VDD, the emitter of the third transistor Q3 is connected to the first end of the third resistor R3, and the other end of the third resistor R3 is grounded.

[0059] Specifically, based on transistor characteristics, the current flowing through the base of the first transistor Q1 may be the ratio of the current flowing through the collector of the first transistor Q1 to the current gain coefficient of the first transistor Q1. Since the current flowing through the first transistor Q1 is equal to the ratio of the difference between the base voltage of the first transistor Q1 and the base-emitter voltage of the first transistor Q1 to the third resistor R3, the current flowing through the base of the first transistor Q1 is It can be expressed by the following formula (4): (4) in, is the current flowing through the collector of the first transistor Q1, is the current gain coefficient of the first transistor Q1, which increases with increasing temperature. is the base voltage of the first transistor Q1, is the base-emitter voltage of the first transistor Q1, is the resistance value of the third resistor R3.

[0060] Optionally, It can be used as a low temperature regulating current. When the ambient temperature rises, reduce, Increased, but The increase ratio The reduction is small, so when the ambient temperature rises, Gradually decrease.

[0061] The low temperature mirror unit 30 is used to mirror the received current and output it. Since the base of the first transistor Q1 is connected to the third end of the low temperature mirror unit 30, the low temperature mirror unit 30 can output the current that is the same as the current received. Integer multiple of low temperature mirror current , so that the reference adjustment unit 10 generates a first adjustment voltage for compensating for the first-order bandgap reference source voltage in a low temperature environment.

[0062] In this embodiment, by connecting the first transistor and the third resistor in series, a low-temperature regulating current that decreases as the ambient temperature increases can be obtained, and the bandgap reference source circuit is compensated by the first regulating voltage generated based on the low-temperature regulating current, so that the bandgap reference source voltage can output a stable reference source voltage in a low-temperature environment. Since the low-temperature regulating unit only uses the first transistor and the third resistor, the circuit is simple and the power consumption is low.

[0063] Furthermore, the low temperature mirror unit 30 includes a first device group Z1, a second MOS tube M2 and a fourth resistor R4, and the first device group Z1 includes at least one first MOS tube M1. Figure 4 As shown, Figure 4 Take the first device group Z1 including a first MOS transistor M1-1 as an example for illustration. Hereinafter, the first MOS transistor is collectively referred to as M1.

[0064] Optionally, the source of each first MOS tube M1 and the source of the second MOS tube M2 are used to access the power signal VDD, the gate of each first MOS tube M1 is respectively connected to the gate and drain of the second MOS tube M2, and the drain of each first MOS tube M1 is connected to the second end of the first resistor R1.

[0065] The drain of the second MOS tube M2 is also connected to the first end of the fourth resistor R4, and the other end of the fourth resistor R4 is connected to the base of the first transistor Q1.

[0066] The low-temperature mirror unit 30 is used to perform an integer-multiple mirror conversion on the low-temperature regulating current based on the number of the first MOS transistors M1 in the first device group Z1 to generate a low-temperature mirror current.

[0067] The fourth resistor R4 has a current limiting function on the base of the first transistor Q1 in the low temperature adjustment unit 20 .

[0068] Optionally, each first MOS tube M1 and the second MOS tube M2 can be exactly the same MOS tube, which works under the same bias condition and can copy the current of the second MOS tube M2 branch to the branch where each first MOS tube M1 is located in integer multiples. Specifically, the current output by the drain current of each first MOS tube M1 is an integer multiple of the drain current of the second MOS tube M2, and the multiple is determined by the number of first MOS tubes M1 in the first device group Z1. Exemplarily, the first device group Z1 includes 4 first MOS tubes M1, and each first MOS tube M1 generates and outputs a current that is 4 times the drain current of the second MOS tube M2. The current of the drain of the second MOS tube M2 is the low-temperature adjustment current output by the low-temperature adjustment unit 20. Based on the connection relationship between the first MOS tube M1 and the second MOS tube M2, the low-temperature adjustment current can be mirrored to the drain of the first MOS tube M1 to obtain a low-temperature mirror current.

[0069] Optionally, the drain of each first MOS tube M1 is connected to the second end of the first resistor R1 in the reference adjustment unit 10. The reference adjustment unit 10 generates a first adjustment voltage based on the low-temperature mirror current, and sends the reference voltage and the first adjustment voltage to the operational amplifier unit 60, so that the operational amplifier unit 60 adds the reference voltage and the first adjustment voltage to obtain a reference source voltage after low-temperature compensation. The reference source voltage after low-temperature compensation can be expressed by the following formula (5): (5) in, is the reference source voltage after low temperature compensation, is the first regulated voltage.

[0070] It is worth noting that the first regulation voltage can be adjusted by adjusting the number of first MOS transistors M1 in the first device group Z1, thereby adjusting the amplitude of the reference source voltage compensation in a low temperature environment.

[0071] In this embodiment, the low-temperature regulating current output by the low-temperature regulating unit is limited by the fourth resistor, and the low-temperature regulating current is mirrored by the first MOS tube and the second MOS tube to obtain a low-temperature mirror current. The reference regulating unit can generate a first regulating voltage based on the low-temperature mirror current, so that the operational amplifier unit obtains a reference source voltage with low-temperature compensation based on the reference voltage and the first regulating voltage.

[0072] Next, the high temperature compensation part is explained. Figure 4 As shown, the high temperature adjustment unit 40 includes a second transistor Q2 and a fifth resistor R5.

[0073] Optionally, the collector of the second transistor Q2 is connected to the third end of the high-temperature mirror unit 50, the emitter of the second transistor Q2 is connected to the first end of the fifth resistor R5, the base of the second transistor Q2 is connected to the fourth end of the high-temperature mirror unit 50, and the collector current of the second transistor Q2 is proportional to the base voltage.

[0074] Specifically, since the emitter of the second transistor Q2 is connected to the third end of the high-temperature mirror unit 50, and the base of the second transistor Q2 is connected to the fourth end of the high-temperature mirror unit 50, the high-temperature mirror unit 50 is used to mirror the received current and output it. Therefore, the high-temperature mirror unit 50 can mirror the emitter current of the second transistor Q2 received at the third end and output it through the fourth end, so that the emitter current of the second transistor Q2 is proportional to the base voltage.

[0075] Optionally, the other end of the fifth resistor R5 is grounded.

[0076] Specifically, since the base-emitter voltage of the second transistor Q2 changes with a negative temperature coefficient, when the temperature rises, the base-emitter voltage of the second transistor Q2 decreases, and the collector current of the second transistor Q2 increases. Since the collector-emitter current of the second transistor Q2 is directly proportional to the base voltage, the base voltage of the second transistor Q2 increases.

[0077] It is worth noting that the transistor has a turn-on voltage threshold. The transistor will only be turned on when the base voltage of the transistor increases to the turn-on voltage threshold.

[0078] Therefore, when the ambient temperature is low, the base voltage of the second transistor Q2 is small and insufficient to turn on the second transistor Q2. When the ambient temperature gradually rises to the preset temperature threshold, the base voltage of the second transistor Q2 reaches the turn-on voltage threshold, and the second transistor Q2 turns on.

[0079] Based on transistor characteristics, the collector current of the second transistor Q2 can be expressed as the following formula (6): (6) in, is the collector current of the second transistor Q2, is the base voltage of the second transistor Q2, is the base-emitter voltage of the second transistor Q2, is the resistance value of the fifth resistor R5.

[0080] Based on formula (6), as the temperature increases, Gradually decrease, Therefore, As the high temperature regulating current, the high temperature regulating current is mirrored by the high temperature mirror unit 50 to generate a high temperature mirror current, and the high temperature mirror current is sent to the reference regulating unit 10, so that the reference regulating unit 10 generates a second regulating voltage based on the high temperature mirror current.

[0081] On the basis of low temperature compensation for the first-order bandgap reference source circuit, after the reference adjustment unit 10 sends the reference voltage, the first adjustment voltage and the second adjustment voltage to the operational amplifier unit 60, the operational amplifier unit 60 generates and outputs a high-low temperature compensated bandgap reference source voltage.

[0082] In this embodiment, a high temperature regulating current having a positive temperature coefficient with respect to temperature is generated by the second transistor and the fifth resistor when the ambient temperature is greater than a preset temperature threshold, thereby providing high temperature compensation for the stripline reference source circuit. Since the high temperature regulating circuit only uses the second transistor and the fifth resistor, the circuit is simple and the power consumption is low. Moreover, since the second transistor is turned on only when the ambient temperature reaches the preset temperature threshold, the power consumption is further saved, and the circuit has the advantages of being resistant to process, voltage and temperature changes.

[0083] Further, refer to Figure 4 The high temperature mirror unit 50 is introduced. The high temperature mirror unit 50 includes a third MOS tube M3, a second device group Z2, a fifth MOS tube M5 and a sixth resistor R6. The second device group Z2 includes at least one fourth MOS tube M4. Figure 4 As shown, Figure 4 The example of the second device group Z2 including a fourth MOS transistor M4-1 is used for illustration. Hereinafter, the fourth MOS transistor is collectively referred to as M4.

[0084] Optionally, the source of the third MOS transistor M3 , the source of each fourth MOS transistor M4 , and the source of the fifth MOS transistor M5 are respectively used to access the power signal VDD.

[0085] Optionally, the gate of the third MOS tube M3 is respectively connected to the gates of the fourth MOS tubes M4 , the gate of the fifth MOS tube M5 and the drain of the third MOS tube M3 , and the drain of the third MOS tube M3 is also connected to the collector of the second transistor Q2 .

[0086] Optionally, the drain of each fourth MOS tube M4 is connected to the first end of the second resistor R2, and the drain of the fifth MOS tube M5 is connected to the base of the second transistor Q2 and the first end of the sixth resistor R6 respectively.

[0087] Optionally, the other end of the sixth resistor R6 is grounded.

[0088] Optionally, the high temperature mirror unit 50 is used to perform an integer multiple mirror conversion on the high temperature regulating current based on the number of fourth MOS transistors M4 in the second device group Z2 to generate a high temperature mirror current.

[0089] Specifically, the gates of the third MOS tube M3, each of the fourth MOS tube M4 and the fifth MOS tube M5, and the drain of the third MOS tube M3 are connected, and the source potentials are the same. Therefore, the currents of the drains of each of the fourth MOS tubes M4 and the drains of the fifth MOS tube M5 are the same as the current of the drain of the third MOS tube M3.

[0090] As the temperature rises, the collector current of the second transistor Q2 gradually increases, and the collector current of the second transistor Q2 is mirrored to the branch where the sixth resistor R6 is located through the third MOS tube M3 and the fifth MOS tube M5, so that the base voltage of the second transistor Q2 gradually increases to break through the conduction voltage threshold, and the second transistor Q2 is turned on. The temperature continues to rise, the collector current of the second transistor Q2 continues to increase, and the base voltage of the second transistor Q2 continues to increase, accelerating the conduction of the second transistor Q2. At this time, each fourth MOS tube M4 performs a mirror conversion on the drain current of the third MOS tube M3 to generate a high-temperature mirror current. Specifically, based on the number of fourth MOS tubes M4, the multiple of the conversion of the drain current of the third MOS tube M3 is determined, and the high-temperature regulation current is converted into the high-temperature mirror current according to the multiple. Exemplarily, the second device group Z2 includes 4 fourth MOS tubes M4, and the high-temperature mirror unit 50 is for the collector current of the second transistor Q2, that is, the high-temperature regulation current Make integer multiple copies and output 4 times , and obtain the high temperature mirror current.

[0091] The drain of each fourth MOS tube M4 is connected to the first end of the second resistor R2, that is, the high-temperature mirror current is sent to the reference adjustment unit 10, and the reference adjustment unit 10 generates a second adjustment voltage based on the high-temperature mirror current.

[0092] The reference adjustment unit 10 generates the reference voltage, the first adjustment voltage and the second adjustment voltage to the operational amplifier unit 60, so that the operational amplifier unit 60 adds the reference voltage, the first adjustment voltage and the second adjustment voltage to obtain a reference source voltage after low temperature compensation and high temperature compensation. The reference source voltage after low temperature compensation and high temperature compensation can be expressed by the following formula (7): (7) in, is the reference source voltage after low temperature compensation and high temperature compensation, is the high temperature mirror current, is the second regulated voltage.

[0093] It is worth noting that the second regulation voltage can be adjusted by adjusting the number of fourth MOS transistors M4 in the second device group Z1, thereby adjusting the amplitude of the reference source voltage compensation in a high temperature environment.

[0094] In this embodiment, the collector current of the second transistor is mirror-converted by the third MOS transistor, each fourth MOS transistor, the fifth MOS transistor and the sixth resistor, and a high-temperature mirror current is generated while providing a turn-on voltage for the second transistor, thereby performing high-temperature compensation for the bandgap reference source voltage.

[0095] As an optional implementation, Figure 5is a waveform diagram of a compensated reference source voltage provided by an embodiment of the present application. Figure 5 As shown, the bandgap reference source voltage has a reduced temperature coefficient in both high and low temperature environments, thereby obtaining a reference source voltage with higher accuracy.

[0096] Next, refer to Figure 4 The specific structure of the operational amplifier unit 60 is introduced as follows: the operational amplifier unit 60 includes: a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, an operational amplifier A1, a fourth transistor Q4, a fifth transistor Q5 and a sixth MOS tube M6.

[0097] Optionally, the first end of the seventh resistor R7 and the first end of the eighth resistor R8 are used to access the power signal VDD, the second end of the seventh resistor R7 is respectively connected to the first input terminal of the operational amplifier A1 and the collector of the fourth transistor Q4, and the second end of the eighth resistor R8 is respectively connected to the second input terminal of the operational amplifier A1 and the collector of the fifth transistor Q5.

[0098] Optionally, the base of the fourth transistor Q4 is connected to the third end of the reference adjustment unit 10, the base of the fifth transistor Q5 is connected to the first end of the ninth resistor R9, the second end of the ninth resistor R9 is respectively connected to the source of the sixth MOS tube M6 and the fourth end of the reference adjustment unit 10, and is connected to the output port of the high and low temperature compensation bandgap reference source circuit, the emitter of the fourth transistor Q4 and the emitter of the fifth transistor Q5 are both connected to the first end of the eleventh resistor R11, and the second end of the eleventh resistor R11 is grounded.

[0099] Optionally, the output end of the operational amplifier A1 is connected to the gate of the sixth MOS transistor M6 , the drain of the sixth MOS transistor M6 is connected to the second end of the tenth resistor R10 , and the first end of the tenth resistor R10 is connected to the power signal VDD.

[0100] Specifically, when the structures of the fourth transistor Q4 and the fifth transistor Q5 are the same, the voltage across the first resistor R1 can be made the difference between the base-emitter voltage of the fourth transistor Q4 and the base-emitter voltage of the fifth transistor Q5. Since the base-emitter voltage of the fourth transistor Q4 and the base-emitter voltage of the fifth transistor Q5 are both negative temperature coefficients, the difference between the two is a positive temperature coefficient.

[0101] The operational amplifier A1 receives and adds the voltages of the first receiving end and the second receiving end, and sends the output voltage to the gate of the sixth MOS transistor M6 . The source of the sixth MOS transistor M6 outputs the reference source voltage.

[0102] Since the low temperature compensation module 2 and the high temperature compensation module 3 provide the low temperature mirror current and the high temperature mirror current to the reference adjustment unit 10 respectively, so that the reference adjustment unit 10 generates the first adjustment voltage and the second adjustment voltage, the operational amplifier A1 adds the reference voltage, the first adjustment voltage and the second adjustment voltage to obtain the reference source voltage, and outputs the reference source voltage to the output port through the sixth MOS tube M6, so that the high and low temperature compensation bandgap reference source circuit outputs a stable reference source voltage at different temperatures.

[0103] In this embodiment, the reference voltage, the first adjustment voltage and the second adjustment voltage sent by the reference adjustment unit are added through the seventh resistor, the eighth resistor, the ninth resistor, the tenth resistor, the eleventh resistor, the operational amplifier, the fourth transistor, the fifth transistor and the sixth MOS tube to output a reference source voltage that is stable at different temperatures.

[0104] As an optional implementation, Figure 6 As shown, the high and low temperature compensation bandgap reference source circuit also includes a startup module. Figure 6 It is a structural schematic diagram of another high and low temperature compensation bandgap reference source circuit provided in an embodiment of the present application.

[0105] Optionally, the first terminal of the startup module 70 is used to access the power signal VDD.

[0106] Optionally, the second end of the startup module 70 is connected to the fifth end of the operational amplifier unit 60 , the third end of the startup module 70 is connected to the fourth end of the operational amplifier unit 60 , and the ground end of the startup module 70 is grounded.

[0107] Optionally, the startup module 70 is used to ensure that the high and low temperature compensation bandgap reference source circuit starts normally and works stably during the power-on process. Specifically, during the rising process of the power signal VDD, the bandgap reference source circuit may not be able to work normally directly due to the gradual rise of the power signal VDD. At this time, the startup module 70 provides a temporary bias current or voltage through the operational amplifier unit 60, so that the bandgap reference source circuit works normally and gradually stabilizes. Among them, the fifth end of the operational amplifier unit is the input end, and the operational amplifier unit can perform operational amplification on the current received at the fifth end and output it to the fourth end, that is, the output port. Once the bandgap reference source circuit starts to work normally, its output voltage gradually replaces the temporary bias provided by the startup module 70, thereby ensuring the stability and reliability of the circuit system.

[0108] In this embodiment, a startup module is used to provide a temporary bias voltage for the high and low temperature compensation bandgap reference source circuit, and the temporary bias is stopped when the power supply signal VDD is stable, thereby providing a startup signal for the high and low temperature compensation bandgap reference source circuit to stabilize the circuit output voltage.

[0109] Furthermore, if Figure 7As shown, the startup module 70 includes: a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a seventh MOS transistor M7, an eighth MOS transistor M8, a ninth MOS transistor M9, a tenth MOS transistor M10, an eleventh MOS transistor M11, a twelfth MOS transistor M12 and a sixth transistor Q6. Figure 7 It is a structural diagram of a startup module 70 provided in an embodiment of the present application.

[0110] Optionally, a first end of the twelfth resistor R12 is connected to the power signal VDD, and a second end of the twelfth resistor R12 is respectively connected to the drain of the seventh MOS transistor M7, the gate of the seventh MOS transistor M7 and the gate of the eighth MOS transistor M8.

[0111] Optionally, the source of the seventh MOS transistor M7 is respectively connected to the first end of the thirteenth resistor R13 , the gate of the eleventh MOS transistor M11 , and the gate of the twelfth MOS transistor M12 .

[0112] Optionally, the drain of the eighth MOS tube M8 is connected to the drain of the ninth MOS tube M9 and the drain of the twelfth MOS tube M12 respectively, and the source of the eighth MOS tube M8 is connected to the fifth end of the operational amplifier unit 60 .

[0113] Optionally, the source of the ninth MOS tube M9 and the source of the tenth MOS tube M10 are respectively connected to the power signal VDD, the gate of the ninth MOS tube M9 is respectively connected to the gate and drain of the tenth MOS tube M10, and the drain of the tenth MOS tube M10 is also connected to the collector of the sixth transistor Q6.

[0114] Optionally, the emitter of the sixth transistor Q6 is connected to the first end of the fourteenth resistor R14 , and the base of the sixth transistor Q6 is connected to the fourth end of the operational amplifier unit 60 .

[0115] Optionally, a second end of the fourteenth resistor R14 is grounded.

[0116] Optionally, the second end of the thirteenth resistor R13 is connected to the drain of the eleventh MOS transistor M11 , and the source of the eleventh MOS transistor M11 and the source of the twelfth MOS transistor M12 are grounded.

[0117] Specifically, during the voltage rise of the power signal VDD, when the power signal VDD is greater than the preset start-up threshold, the branch where the twelfth resistor R12 is located begins to generate current. If the branch where the ninth MOS tube M9 is located needs to be turned on, the eighth MOS tube M8 is required to extract current from the fifth end of the operational amplifier unit 60. The fourth end of the operational amplifier unit 60 has a reduced current and a reduced voltage, and the output of the operational amplifier unit 60 increases to provide a temporary bias. Since the fourth end of the operational amplifier unit 60 is the output port of the high and low temperature compensation bandgap reference source circuit, the base voltage of the sixth transistor Q6 gradually increases until it is turned on. When the sixth transistor Q6 is turned on, the current of the branch where the fourteenth resistor R14 is located gradually increases, and the drain of the ninth MOS tube M9 mirrors the drain current of the tenth MOS tube M10, so that the eighth MOS tube M8 does not need to extract current from the fifth end of the operational amplifier unit 60, and the eighth MOS tube M8 is turned off, and the start-up signal is stopped to the power amplifier unit. The output voltage of the bandgap reference source circuit gradually replaces the temporary bias provided by the start-up module 70, the circuit output is stable, and the start-up circuit is completed.

[0118] In this embodiment, the bias voltage at startup is provided by the twelfth resistor, the thirteenth resistor, the fourteenth resistor, the seventh MOS tube, the eighth MOS tube, the ninth MOS tube, the tenth MOS tube, the eleventh MOS tube, the twelfth MOS tube and the sixth transistor. When the power supply signal is stable, the startup module stops providing the bias voltage to stabilize the reference source voltage output by the high and low temperature compensation bandgap reference source circuit.

[0119] An embodiment of the present application also provides a conversion device, which includes the above-mentioned high and low temperature compensation bandgap reference source circuit.

[0120] The above are only specific implementation methods of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be covered by the protection scope of the present application.

Claims

1. A high and low temperature compensation bandgap reference source circuit, characterized in that: include: A low temperature compensation module, a high temperature compensation module and a reference module, wherein the low temperature compensation module includes a low temperature mirror unit and a low temperature adjustment unit, the high temperature compensation module includes a high temperature mirror unit and a high temperature adjustment unit, the reference module includes an operational amplifier unit and a reference adjustment unit, the low temperature adjustment unit includes a first transistor, and the high temperature adjustment unit includes a second transistor; The first end of the low temperature mirror unit is used to access the power signal, the second end of the low temperature mirror unit is connected to the first end of the reference adjustment unit, and the third end of the low temperature mirror unit is connected to the first end of the low temperature adjustment unit; The second end of the low temperature adjustment unit is used to receive the power signal, and the ground end of the low temperature adjustment unit is grounded; The first end of the high temperature mirror unit is used to access the power signal, the second end of the high temperature mirror unit is connected to the second end of the reference adjustment unit, the third end of the high temperature mirror unit is connected to the first end of the high temperature adjustment unit, the fourth end of the high temperature mirror unit is connected to the second end of the high temperature adjustment unit, the ground end of the high temperature mirror unit is grounded, and the ground end of the high temperature adjustment unit is grounded; The third end of the reference adjustment unit is connected to the first end of the operational amplifier unit, the fourth end of the reference adjustment unit is connected to the second end of the operational amplifier unit, and the ground end of the reference adjustment unit is grounded; The third terminal of the operational amplifier unit is used to access the power supply signal, the fourth terminal of the operational amplifier unit is used as the output port of the high and low temperature compensation bandgap reference source circuit, and the ground terminal of the operational amplifier unit is grounded; The low-temperature regulation unit is used to generate a low-temperature regulation current based on a first current generated by the first transistor at different temperatures, the low-temperature mirror unit is used to send a low-temperature mirror current to the reference regulation unit according to the low-temperature regulation current, the high-temperature regulation unit is used to generate a high-temperature regulation current at different temperatures based on the second transistor when the temperature is higher than a preset temperature threshold, the high-temperature mirror unit is used to send a high-temperature mirror current to the reference regulation unit according to the high-temperature regulation current, and the reference regulation unit is used to send a reference voltage, a first regulation voltage, and a second regulation voltage to the operational amplifier unit based on the high-temperature mirror current and / or the low-temperature mirror current, so that the operational amplifier unit outputs a stable reference source voltage based on the reference voltage, the first regulation voltage, and the second regulation voltage.

2. The high and low temperature compensation bandgap reference source circuit according to claim 1, characterized in that: The reference adjustment unit includes: a first resistor, a second resistor and a third transistor; The first end of the first resistor is connected to the first end of the operational amplifier unit, and the second end of the first resistor is respectively connected to the collector of the third transistor, the base of the third transistor and the second end of the low-temperature mirror unit; The base of the third transistor is also connected to the first end of the operational amplifier unit, and the emitter of the third transistor is respectively connected to the second end of the high-temperature mirror unit and the first end of the second resistor; A second terminal of the second resistor is grounded.

3. The high and low temperature compensation bandgap reference source circuit according to claim 2, characterized in that: The low temperature adjustment unit further includes: a third resistor; The base of the first transistor is connected to the third end of the low-temperature mirror unit, the collector of the first transistor is used to access the power signal, the emitter of the third transistor is connected to the first end of the third resistor, and the other end of the third resistor is grounded.

4. The high and low temperature compensation bandgap reference source circuit according to claim 3, characterized in that: The low-temperature mirror unit comprises: a first device group, a second MOS tube and a fourth resistor, wherein the first device group comprises at least one first MOS tube; The source of each of the first MOS tubes and the source of the second MOS tube are used to access the power signal, the gate of each of the first MOS tubes is connected to the gate and drain of the second MOS tube respectively, and the drain of each of the first MOS tubes is connected to the second end of the first resistor; The drain of the second MOS transistor is also connected to the first end of the fourth resistor, and the other end of the fourth resistor is connected to the base of the first transistor; The low-temperature mirror unit is used to perform an integer-multiple mirror conversion on the low-temperature regulating current based on the number of first MOS tubes in the first device group to generate a low-temperature mirror current.

5. The high and low temperature compensation bandgap reference source circuit according to claim 2, characterized in that: The high temperature adjustment unit further includes: a fifth resistor; The collector of the second transistor is connected to the third end of the high-temperature mirror unit, the emitter of the second transistor is connected to the first end of the fifth resistor, the base of the second transistor is connected to the fourth end of the high-temperature mirror unit, and the collector current of the second transistor is proportional to the base voltage; The other end of the fifth resistor is grounded.

6. The high and low temperature compensation bandgap reference source circuit according to claim 5, characterized in that: The high temperature mirror unit comprises: a third MOS tube, a second device group, a fifth MOS tube and a sixth resistor, wherein the second device group comprises at least one fourth MOS tube; The source of the third MOS tube, the source of each of the fourth MOS tubes and the source of the fifth MOS tube are respectively used to access the power signal; The gate of the third MOS tube is respectively connected to the gates of each fourth MOS tube, the gate of the fifth MOS tube and the drain of the third MOS tube, and the drain of the third MOS tube is also connected to the collector of the second transistor; The drain of each of the fourth MOS transistors is connected to the first end of the second resistor, and the drain of the fifth MOS transistor is connected to the base of the second transistor and the first end of the sixth resistor respectively; The other end of the sixth resistor is grounded; The high temperature mirror unit is used to perform an integer multiple mirror conversion on the low temperature regulation current based on the number of fourth MOS tubes in the second device group to generate a high temperature mirror current.

7. The high and low temperature compensation bandgap reference source circuit according to claim 2, characterized in that: The operational amplifier unit includes: a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, an operational amplifier, a fourth transistor, a fifth transistor and a sixth MOS tube; The first end of the seventh resistor and the first end of the eighth resistor are used to access the power signal, the second end of the seventh resistor is respectively connected to the first input end of the operational amplifier and the collector of the fourth transistor, and the second end of the eighth resistor is respectively connected to the second input end of the operational amplifier and the collector of the fifth transistor; The base of the fourth transistor is connected to the third end of the reference adjustment unit, the base of the fifth transistor is connected to the first end of the ninth resistor, the second end of the ninth resistor is respectively connected to the source of the sixth MOS tube and the fourth end of the reference adjustment unit, and is connected to the output port of the high and low temperature compensation bandgap reference source circuit, the emitter of the fourth transistor and the emitter of the fifth transistor are both connected to the first end of the eleventh resistor, and the second end of the eleventh resistor is grounded; The output end of the operational amplifier is connected to the gate of the sixth MOS tube, the drain of the sixth MOS tube is connected to the second end of the tenth resistor, and the first end of the tenth resistor is connected to the power signal.

8. The high and low temperature compensation bandgap reference source circuit according to claim 1, characterized in that: The high and low temperature compensation bandgap reference source circuit further includes: a startup module; The first end of the startup module is used to receive the power signal; The second end of the startup module is connected to the fifth end of the operational amplifier unit, the third end of the startup module is connected to the fourth end of the operational amplifier unit, and the grounding end of the startup module is grounded.

9. The high and low temperature compensation bandgap reference source circuit according to claim 8, characterized in that: The startup module includes: a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a seventh MOS tube, an eighth MOS tube, a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube and a sixth transistor; The first end of the twelfth resistor is connected to the power signal, and the second end of the twelfth resistor is respectively connected to the drain of the seventh MOS tube, the gate of the seventh MOS tube, and the gate of the eighth MOS tube; The source of the seventh MOS tube is respectively connected to the first end of the thirteenth resistor, the gate of the eleventh MOS tube and the gate of the twelfth MOS tube; The drain of the eighth MOS tube is connected to the drain of the ninth MOS tube and the drain of the twelfth MOS tube respectively, and the source of the eighth MOS tube is connected to the fifth end of the operational amplifier unit; The source of the ninth MOS tube and the source of the tenth MOS tube are respectively connected to the power signal, the gate of the ninth MOS tube is respectively connected to the gate and drain of the tenth MOS tube, and the drain of the tenth MOS tube is also connected to the collector of the sixth transistor; The emitter of the sixth transistor is connected to the first end of the fourteenth resistor, and the base of the sixth transistor is connected to the fourth end of the operational amplifier unit; A second end of the fourteenth resistor is grounded; The second end of the thirteenth resistor is connected to the drain of the eleventh MOS transistor, and the source of the eleventh MOS transistor and the source of the twelfth MOS transistor are grounded.

10. A conversion device, characterized in that: The conversion device includes a high and low temperature compensation bandgap reference source circuit as described in any one of claims 1-9.

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