Semiconductor cleaning device and control method

Abstract

The invention relates to a semiconductor cleaning device, the cleaning device is used for removing impurities on the surface of a wafer, the cleaning device comprises a cleaning mechanism, the cleaning mechanism comprises a material seat, a flow guide seat, a drainage piece and a cleaning assembly, the material seat is controlled to rotate, the material seat comprises a placing plane used for placing the wafer, and the flow guide seat is controlled to rotate. According to the semiconductor cleaning device, the technical means that the material seat and the flow guide seat are coaxially arranged and the radius of the edge contour of the flow guide surface is smaller than the radius of the wafer is adopted, so that cleaning liquid is effectively prevented from entering a gap between the wafer and the flow guide seat, the flow path of the cleaning liquid is accurately controlled, and meanwhile, the service life of the cleaning liquid is prolonged. Through the first annular groove and the second annular groove which are arranged in a concentric structure, inert gas and pure water are sprayed on the back side of the wafer, so that double blocking is formed on the back side of the wafer, the problem of cleaning liquid residue caused by uneven flow velocity or sputtering is effectively solved, and the effect of preventing the cleaning liquid from permeating into the gap is achieved.

Description

Technical Field

[0001] The invention relates to the field of semiconductor cleaning, and in particular to a wafer cleaning device. Background Art

[0002] In the semiconductor manufacturing process, cleaning the wafer surface is a key step to ensure high-quality chip production. With the continuous development of semiconductor technology, the integration and precision of chips are constantly improving, and the requirements for wafer surface cleanliness are becoming increasingly stringent. Removing impurities, particles and residues from the wafer surface has become an indispensable part of the manufacturing process. When cleaning wafers, liquid cleaning agents and gas drying media are usually applied alternately or in combination to achieve efficient cleaning and drying effects on the wafer surface.

[0003] Existing wafer cleaning devices usually include a material seat for supporting and rotating the wafer, and corresponding liquid and gas injection devices. The cleaning liquid is sprayed onto the rotating wafer surface through a nozzle or a spray system, and cooperates with the centrifugal system to remove attached impurities and particles, and uses centrifugal force to throw the liquid mixed with impurities and particles from the wafer surface to the edge. At the same time, the existing cleaning equipment is also equipped with a guide seat and a guide piece to guide and collect the used cleaning liquid to improve the cleaning efficiency and the reuse efficiency of the cleaning liquid. The guide seat is generally fixedly or rotatably arranged above the material seat, and works with the material seat to jointly achieve the cleaning of the wafer surface and the collection of liquid.

[0004] However, in the prior art, during the cleaning process, when the cleaning liquid spraying mode and flow rate are uneven, cleaning liquid sputtering may occur, causing the cleaning liquid to enter the gap between the cleaning ring and the wafer surface, which will cause the cleaning liquid to remain on the edge or back of the wafer, affecting the cleaning effect, reducing the efficiency of high-precision cleaning, and making it difficult to fully meet the strict requirements for wafer cleanliness in semiconductor manufacturing. Therefore, it is urgent to propose a semiconductor cleaning device to solve the above problems. Summary of the invention

[0005] The object of the present invention is to provide a semiconductor cleaning device which can prevent cleaning liquid from entering the gap between a wafer and a cleaning ring and avoid residual cleaning liquid.

[0006] The technical solution adopted by the present invention to solve the above-mentioned problem is: a semiconductor cleaning device, which is used to remove impurities on the surface of a wafer, comprising:

[0007] The material seat is controlled to rotate, and the material seat includes a placement plane for placing wafers.

[0008] A guide seat, the guide seat rotates in a controlled manner, and the rotation axis of the guide seat is coaxially arranged with the rotation axis of the material seat, the guide seat includes a guide surface, the rotation axis of the guide seat is perpendicular to the guide surface, and the edge contour of the guide surface is circular, the radius corresponding to the edge contour of the guide surface is smaller than the radius of the wafer coaxially placed on the placement plane, the guide surface side of the guide seat is provided with a first annular groove and a second annular groove, the first annular groove and the second annular groove are concentrically arranged, and the radius of the first annular groove is smaller than the radius of the second annular groove, the material seat A first flow channel and a second flow channel are provided in the material seat, one end of the first flow channel is connected to the first annular groove, the other end of the first flow channel is connected to an air source, one end of the second flow channel is connected to the second annular groove, and the other end of the second flow channel is connected to a liquid source, wherein the opening direction of the first annular groove forms a first preset angle with the rotation axis of the material seat, the opening direction of the second annular groove forms a second preset angle with the rotation axis of the material seat, and a first gap is provided between the guide surface and the placement plane, so that the placement plane of the material seat protrudes from the guide surface of the guide seat.

[0009] A flow guide member, wherein the flow guide member rotates in a controlled manner, and the rotation axis of the flow guide member is coaxially arranged with the rotation axis of the flow guide seat, the flow guide member comprises a flow guide surface, the flow guide surface is perpendicular to the rotation axis of the flow guide member, and a second gap exists between the flow guide surface of the flow guide member and the flow guide surface of the flow guide seat so that the flow guide surface of the flow guide seat protrudes from the flow guide surface of the flow guide member.

[0010] A cleaning component is arranged on a side of the material seat away from the guide member, and the cleaning component comprises a nozzle, and a nozzle of the nozzle is arranged toward the placement plane.

[0011] Preferably, a first main flow channel is opened in the guide seat, and the number of the first main flow channels opened in the guide seat is several, and the ends of the several first main flow channels away from the first annular groove are connected to the interior of the first main flow channel, and the first main flow channel is connected to the gas source through a pipeline.

[0012] A second main flow channel is provided in the flow guide seat. The number of the second main flow channels provided in the flow guide seat is several. One end of each second main flow channel away from the second annular groove is connected to the interior of the second main flow channel. The second main flow channel is connected to a liquid source through a pipeline.

[0013] Preferably, a first connecting groove connected to the first flow channel and a second connecting groove connected to the second flow channel are formed inside the guide seat, and a third annular groove connected to the first connecting groove and a fourth annular groove connected to the second connecting groove are formed on the outer peripheral side of the guide seat.

[0014] An annular embedding groove is provided at the drainage surface of the drainage member. The drainage member comprises an annular component. The annular component is detachably arranged in the annular embedding groove. The annular component is composed of a plurality of concentrically arranged annular members.

[0015] An extension ring, wherein a third flow channel and a fourth flow channel are provided inside the extension ring, and a fifth annular groove and a sixth annular groove are provided concentrically on the side of the extension ring away from the guide member, one end of the third flow channel is connected to the fifth annular groove, one end of the fourth flow channel is connected to the sixth annular groove, and the extension ring is configured so that when the annular member closest to the guide seat is replaced by the extension ring, the outer peripheral side wall of the extension ring is fitted with the inner peripheral side wall of the adjacent annular member, and the inner peripheral side wall of the extension ring is fitted with the outer peripheral side wall of the guide seat, so that the other end of the third flow channel in the extension ring is connected to the third annular groove, and the other end of the fourth flow channel in the extension ring is connected to the fourth annular groove.

[0016] Preferably, the opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat, and the opening direction of the sixth annular seat forms a fourth preset angle with the rotation axis of the material seat.

[0017] Preferably, a semiconductor cleaning device further comprises:

[0018] A rotating shaft, the rotating shaft is controlled to rotate, the rotating shaft is connected to the material seat, the rotating shaft is connected to the guide seat, the rotating shaft is connected to the guide member, and the axis of the rotating shaft is coaxially arranged with the rotation axis of the material seat, the rotation axis of the guide seat and the rotation axis of the guide member.

[0019] A driving motor, wherein the output shaft of the driving motor is drivingly connected to the rotating shaft.

[0020] Preferably, a semiconductor cleaning device further comprises:

[0021] The liquid collector comprises an annular liquid collecting trough, which is coaxially arranged outside the rotating shaft, and the notch of the liquid collecting trough is arranged lower than the drainage surface on the drainage member.

[0022] Preferably, a semiconductor cleaning device further comprises:

[0023] The box body comprises a first accommodating space, and the material seat, the flow guide seat, the flow guide member and the nozzle are all arranged in the first accommodating space.

[0024] A control cabinet, wherein the control cabinet comprises a second accommodating space, and the box body is arranged in the second accommodating space.

[0025] In particular, a control method for a semiconductor cleaning device as described above is characterized by comprising:

[0026] The method for controlling the injection of gas and liquid during the start-up phase of the drive motor comprises:

[0027] The real-time rotation speed of the drive motor and the rotation speed change rate of the drive motor are obtained.

[0028] The initial ejection speed of the gas and the initial ejection speed of the liquid are obtained according to the real-time rotation speed of the driving motor.

[0029] According to the real-time rotation speed and rotation speed change rate of the driving motor during acceleration, and in combination with the interaction between the injected gas and the injected liquid, the injection speed of the gas and the injection speed of the liquid are adjusted, and a stable injection flow is formed after the rotation speed of the driving motor stabilizes.

[0030] Preferably, a control method for a semiconductor cleaning device further includes:

[0031] The method for controlling the injection of gas and liquid by the driving motor during the stop phase comprises:

[0032] The real-time rotation speed of the drive motor and the rotation speed change rate of the drive motor are obtained.

[0033] The gas injection speed and the liquid injection speed are obtained according to the real-time rotation speed of the driving motor and the rotation speed change rate of the driving motor.

[0034] According to the interaction between the injected gas and the injected liquid, a corrected gas injection velocity and a corrected liquid injection velocity are obtained.

[0035] According to the real-time rotation speed and the rotation speed change rate of the driving motor, the real-time injection speed of the gas and the real-time injection speed of the liquid are adjusted to keep the blocking layer stable.

[0036] Preferably, the interaction between the injected gas and the injected liquid is obtained by the following formula:

[0037] C(t)=α·v g (t)·v l (t)·cos(θ g -θ l ).

[0038] in:

[0039] α is the proportionality constant of the interaction and is adjusted based on the nozzle structure and fluid physics.

[0040] θ g are the gas injection angles, respectively.

[0041] θ l is the liquid spray angle.

[0042] v g is the gas jet velocity.

[0043] v l (t) is the liquid injection velocity.

[0044] Beneficial effects of the embodiments of the present invention

[0045] The semiconductor cleaning device adopts the technical means of coaxially setting the material seat and the guide seat and making the radius of the edge contour of the guide surface smaller than the radius of the wafer, so as to effectively prevent the cleaning liquid from entering the gap between the wafer and the guide seat, thereby realizing the precise control of the flow path of the cleaning liquid. At the same time, through the first annular groove and the second annular groove arranged in the concentric structure, the inert gas and pure water are sprayed on the back side of the wafer, thereby forming a double blockage on the back side of the wafer, effectively solving the problem of cleaning liquid residue caused by uneven flow rate or sputtering, thereby realizing the effect of preventing the cleaning liquid from penetrating into the gap. In addition, the guide surface of the guide piece is coaxially arranged with the guide surface and the guide surface is slightly protruding, so that the excess cleaning liquid can be quickly guided after the cleaning is completed, effectively solving the problem of cleaning liquid retention, thereby realizing the improvement of the cleaning liquid collection efficiency. These designs jointly realize the significant improvement of efficient cleaning, cleaning liquid control and cleaning liquid collection efficiency, and meet the strict requirements for wafer cleanliness in semiconductor manufacturing.

[0046] The semiconductor cleaning device adopts a matching design of a ring part and an extension ring, so that the ring component can adjust the radial size by increasing or decreasing the number of ring parts according to the target wafer size, thereby being suitable for wafers of different sizes. Therefore, it effectively solves the problem in the prior art that the cleaning device can only be applied to fixed sizes, thereby realizing the adaptability and versatility of the cleaning device to wafers of various sizes, and significantly improving the flexibility and application range of the cleaning device. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Schematic diagram of the structure of a battery case suitable for the present invention.

[0048] Figure 2 is a schematic cross-sectional view of a battery case suitable for use in the present invention.

[0049] Figure 3It is a schematic structural diagram of an embodiment of the present invention.

[0050] Figure 4 It is a schematic structural diagram of a flow diversion component and a detection platform in a connected state in one embodiment of the present invention.

[0051] Figure 5 Schematic cross-sectional view of a battery housing sleeved on the outside of a core mold in one embodiment of the present invention Figure 1 .

[0052] Figure 6 Schematic cross-sectional view of a battery housing sleeved on the outside of a core mold in one embodiment of the present invention Figure 2 .

[0053] Figure 7 FIG. 4 is a schematic exploded view of a flow divider in one embodiment of the present invention. Figure 8 It is a schematic structural diagram of the driving motor, the liquid collector and the box body when they are connected in one embodiment of the present invention. Fig. 9 It is a schematic structural diagram of a semiconductor cleaning device in one embodiment of the present invention.

[0054] Among them: 100, cleaning mechanism; 110, placement plane; 120, material seat; 130, guide seat; 131, main channel; 1311, main annular groove; 132, connecting groove; 133, sealing ring; 140, connecting piece; 150, guide piece; 160, annular component; 170, extension ring; 171, extension channel; 172, secondary annular groove; 200, liquid collector; 210, annular liquid collecting tank; 300, driving motor 300; 400, cleaning component; 500, box; 600, control cabinet; 700, rotating shaft; 800, bushing; 900, wafer 900. DETAILED DESCRIPTION

[0055] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0056] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the scope of protection of the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description created by the present application, unless otherwise specified, "multiple" means two or more.

[0057] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood by specific circumstances.

[0058] As shown in the figure, a semiconductor cleaning device is provided in a preferred embodiment of the present application. The cleaning device is used to remove impurities on the surface of a wafer 900, and includes a cleaning mechanism 100. The cleaning mechanism 100 includes a material seat 120, a flow guide seat 130, a flow guide member 150 and a cleaning assembly 400, wherein the material seat 120 rotates in a controlled manner, the material seat 120 includes a placement plane 110 for placing the wafer 900, the flow guide seat 130 rotates in a controlled manner, and the rotation axis of the flow guide seat 130 is coaxially arranged with the rotation axis of the material seat 120, and the flow guide seat 130 rotates in a controlled manner. The seat 130 includes a guide surface, the rotation axis of the guide seat 130 is perpendicular to the guide surface, and the edge profile of the guide surface is circular, the radius corresponding to the edge profile of the guide surface is smaller than the radius of the wafer 900 coaxially placed on the placement plane 110, and the guide surface side of the guide seat 130 is provided with a main annular groove 1311, which is respectively a first annular groove and a second annular groove, the first annular groove and the second annular groove are concentrically arranged, and the radius of the first annular groove is smaller than the radius of the second annular groove, and the material seat 120 is provided with a main flow channel 131, which is respectively a first flow channel and a second flow channel. The flow channel, one end of the first flow channel is connected to the first annular groove, the other end of the first flow channel is connected to the gas source, one end of the second flow channel is connected to the second annular groove, and the other end of the second flow channel is connected to the liquid source, wherein the opening direction of the first annular groove forms a first preset angle with the rotation axis of the material seat 120, the opening direction of the second annular groove forms a second preset angle with the rotation axis of the material seat 120, there is a first gap between the guide surface and the placement plane 110, so that the placement plane 110 of the material seat 120 protrudes from the guide surface of the guide seat 130, and the guide member 15 0 is controlled to rotate, and the rotation axis of the guide member 150 is coaxially arranged with the rotation axis of the guide seat 130, the guide member 150 includes a guide surface, the guide surface is perpendicular to the rotation axis of the guide member 150, and a second gap exists between the guide surface of the guide member 150 and the guide surface of the guide seat 130, so that the guide surface of the guide seat 130 protrudes from the guide surface of the guide member 150, the cleaning component 400 is arranged on the side of the material seat 120 away from the guide member 150, and the cleaning component 400 includes a nozzle, and the nozzle of the nozzle is arranged toward the placement plane 110.

[0059] In this embodiment, the material holder 120 is a disc structure capable of controlled rotation, which includes a placement plane 110 for placing the wafer 900. The placement plane 110 is designed to be a smooth and solid surface to fix and support the wafer 900. The material holder 120 supports the wafer 900 during the cleaning process and provides a stable rotating platform so that the cleaning liquid and gas can evenly cover the surface of the wafer 900. The material holder 120 is designed to be controllably rotatable and has a plane for placing the wafer 900. Its coaxial rotation design acts to provide centrifugal force during the cleaning process to throw impurities and cleaning liquid off the surface of the wafer 900, thereby improving the cleaning efficiency. At the same time, its rotation provides stable support so that the cleaning liquid and gas can evenly act on the surface of the wafer 900. The material holder 120 is designed to be controllably rotatable to ensure the stability of the wafer 900 during the cleaning process, and to achieve efficient removal of impurities with the centrifugal force.

[0060] The guide seat 130 is coaxially arranged with the material seat 120 so that it can rotate synchronously with the material seat 120, and the axis of rotation is perpendicular to the guide surface thereon. The edge contour of the guide surface is circular, and the radius is smaller than the radius of the wafer 900 placed on the material seat 120, so that the edge of the wafer 900 is in a suspended state, ensuring that there is a circle of controllable flow space between the guide surface and the edge of the wafer 900, and a concentric first annular groove and a second annular groove are opened on the side of the guide surface, and the radius of the first annular groove is smaller than the second annular groove, that is, the first annular groove is located inside the second annular groove. The first annular groove and the second annular groove are connected to the gas source and the liquid source respectively, and a double blocking layer is formed on the back of the wafer 900 by accurately controlling the flow direction of the gas and the cleaning liquid to prevent the cleaning liquid from penetrating into the gap, wherein the gas of the gas source can be selected as an inert gas, and the liquid of the liquid source can be selected as pure water, and the gas source can be selected as an air pump, and the liquid source is a water pump. The guide seat 130 can be made of high-strength alloy material to ensure that the structure is stable and does not deform during high-speed rotation. The design of the guide seat 130 effectively prevents the cleaning liquid from penetrating into the gap between the wafer 900 and the cleaning ring, ensuring accurate control of the flow path of the cleaning liquid. The guide seat 130 guides the cleaning liquid and gas to form a stable blocking layer on the back of the wafer 900, improving the cleaning effect while preventing liquid penetration.

[0061] The guide member 150 is coaxially arranged with the guide seat 130 and the material seat 120, and a certain gap is maintained between the guide surface and the guide surface, and the guide surface is slightly lower than the guide surface. The structure of the guide member 150 allows the excess cleaning liquid to be discharged smoothly after the cleaning is completed. The guide member 150 controls the flow direction of the cleaning liquid through the second gap between it and the guide surface, and can quickly guide the excess cleaning liquid to the designated liquid collector 200 or collection device after the cleaning is completed, so as to prevent the cleaning liquid from being retained between the wafer 900 and the guide structure. In practical applications, the guide member 150 can be made of corrosion-resistant metal or hard engineering plastic to adapt to the long-term flushing of cleaning liquid and gas. The structure of the guide member 150 ensures that the cleaning liquid is quickly discharged after cleaning, maintains the cleanliness of the cleaning system, and prevents the cleaning liquid from remaining in the system, thereby improving the efficiency and effect of the entire cleaning process.

[0062] In some embodiments, the material seat 120 , the flow guide seat 130 and the flow guide member 150 are connected to one end of the rotating shaft 700 via a connecting member 140 .

[0063] The nozzle of the cleaning component 400 is designed to face the wafer 900 to ensure that the cleaning liquid can evenly cover the surface of the wafer 900 and remove surface impurities. By controlling the spray pressure and flow of the nozzle, a high-pressure spray or fine atomization cleaning mode can be selected according to different cleaning needs. The cleaning component 400 can spray the cleaning liquid directly onto the surface of the wafer 900, and cooperate with the rotating centrifugal force of the material holder 120 to ensure that impurities and cleaning liquid quickly leave the surface of the wafer 900, achieving efficient cleaning and fast drying effects.

[0064] In this embodiment, the material seat 120 and the guide seat 130 are coaxially arranged, and the radius of the edge contour of the guide surface is smaller than the radius of the wafer 900. Therefore, the cleaning liquid is effectively prevented from entering the gap between the wafer 900 and the guide seat 130, thereby realizing the precise control of the flow path of the cleaning liquid. At the same time, the inert gas and pure water are sprayed on the back side of the wafer 900 through the first annular groove and the second annular groove arranged in the concentric structure, thereby forming a double blockage on the back side of the wafer 900, effectively solving the problem of cleaning liquid residue caused by uneven flow rate or sputtering, thereby realizing the effect of preventing the cleaning liquid from penetrating into the gap. In addition, the guide surface of the guide member 150 is coaxially arranged with the guide surface and the guide surface is slightly protruding, so that the excess cleaning liquid can be quickly guided after the cleaning is completed, effectively solving the problem of cleaning liquid retention, thereby realizing the improvement of the cleaning liquid collection efficiency. These designs jointly realize the significant improvement of efficient cleaning, cleaning liquid control and cleaning liquid collection efficiency, and meet the strict requirements for the cleanliness of the wafer 900 in semiconductor manufacturing.

[0065] In some embodiments, a plurality of main flow channels 131 are provided in the flow guide seat 130. The main flow channels 131 are divided into a first flow channel and a second flow channel. The end of each first flow channel away from the first annular groove is connected to the gas source through a pipeline. The end of each second flow channel away from the second annular groove is connected to the liquid source.

[0066] In this embodiment, the semiconductor cleaning device adds a main channel 131 structure to further optimize the transmission path and distribution effect of gas and liquid. A plurality of main channels 131 are arranged inside the flow guide seat 130 to introduce gas and liquid into the first annular groove and the second annular groove respectively. The main channel 131 is divided into a first channel and a second channel. One end of the first channel is connected to the first annular groove, and the other end is connected to the gas source through a pipeline. One end of the second channel is connected to the second annular groove, and the other end is connected to the liquid source through a pipeline. The diversion design of the main channel 131 effectively realizes the independent transportation of gas and liquid, and avoids mutual interference between gas and liquid in the flow guide seat 130. The first channel ensures that the gas flows to the first annular groove, while the second channel ensures that the liquid flows to the second annular groove, so that the gas and liquid form independent blocking layers respectively, enhancing the cleaning effect. The main channel 131 can be designed as a pipeline with a smooth inner wall to reduce the resistance of the liquid and gas flow and improve the transmission efficiency. High-hardness metal or anti-corrosion material can be used as the pipeline material of the main channel 131. This independent main channel 131 design realizes efficient transmission of gas and liquid in the guide seat 130, ensures the stability of the blocking layer formation, improves the cleaning device's ability to control the flow of cleaning liquid and gas, and thus improves the overall stability and accuracy of the cleaning process.

[0067] One end of the first flow channel is connected to the first annular groove, and the other end is connected to the gas source through a pipeline. The first flow channel is designed as an independent pipeline dedicated to transmitting gas. The independent setting of the first flow channel can prevent the cross-influence of gas and liquid when flowing, and ensure that the gas can be evenly delivered to the first annular groove, thereby forming a stable gas blocking layer. The first flow channel makes the gas transmission path more stable and avoids the occurrence of gas-liquid mixed flow, thereby effectively improving the stability of the gas blocking layer and enhancing the blocking effect of the cleaning liquid during the cleaning process.

[0068] One end of the second flow channel is connected to the second annular groove, and the other end is connected to the liquid source through a pipeline, and is dedicated to transmitting liquid. The second flow channel is designed as an independent flow channel system to ensure the independence of the cleaning liquid transmission. The second flow channel ensures that the cleaning liquid can be stably and continuously transmitted to the second annular groove to form a uniform liquid blocking layer. The independent liquid channel avoids interference between gas and liquid during the flow process, which helps to distribute the cleaning liquid more evenly on the back. The second flow channel structure enhances the stability of liquid transmission, ensures the uniform distribution of the liquid blocking layer on the back of the wafer 900, further improves the cleaning effect, and reduces the risk of cleaning liquid infiltration.

[0069] In summary, the first flow channel and the second flow channel provided in the flow guide seat 130 are connected to the gas source and the liquid source respectively, ensuring the independent transmission of gas and liquid, forming a double blocking layer, and further optimizing the stability of gas-liquid blocking. This double flow channel design ensures the stability and independence of the gas and liquid blocking layers, further improves the cleaning efficiency and cleaning effect of the cleaning device, and meets the cleaning requirements in high-precision semiconductor manufacturing.

[0070] In some embodiments, the flow guide seat 130 has a connecting groove 132 connected to the main flow channel 131, and the connecting groove 132 includes a first connecting groove and a second connecting groove, the first connecting groove is connected to the first flow channel, and the second connecting groove is connected to the second flow channel. The outer peripheral side of the flow guide seat 130 has a third annular groove connected to the first connecting groove and a fourth annular groove connected to the second connecting groove. When the third annular groove and the fourth annular groove need to be sealed, the sealing ring 133 can be installed in the third annular groove and the fourth annular groove, so as to achieve the sealing of the third annular groove and the fourth annular groove. The flow guide member 150 has an annular embedding groove on its drainage surface, and the flow guide member 150 includes an annular assembly 160, which is detachably arranged in the annular embedding groove, and the annular assembly 160 is composed of a plurality of concentrically arranged annular members. An extension flow channel 171 is opened inside the extension ring 170, and the extension flow channel 171 includes a third flow channel and a fourth flow channel, and a secondary annular groove 172 is opened on the side of the extension ring 170 away from the guide member 150, and the secondary annular groove 172 includes a fifth annular groove and a sixth annular groove arranged concentrically, one end of the third flow channel is connected to the fifth annular groove, and one end of the fourth flow channel is connected to the sixth annular groove, and the extension ring 170 is configured so that when an annular member closest to the guide seat 130 is replaced by the extension ring 170, the outer peripheral side wall of the extension ring 170 is fitted with the inner peripheral side wall of the adjacent annular member, and the inner peripheral side wall of the extension ring 170 is fitted with the outer peripheral side wall of the guide seat 130, so that the other end of the third flow channel in the extension ring 170 is connected to the third annular groove, and the other end of the fourth flow channel in the extension ring 170 is connected to the fourth annular groove.

[0071] In this embodiment, the semiconductor cleaning device is provided with a connecting groove 132, an annular groove, a sealing ring 133, an extension ring 170 and other designs to further optimize the distribution and control of gas and liquid.

[0072] The connecting groove 132 is arranged inside the guide seat 130 and is connected to the main channel 131. The connecting groove 132 includes a first connecting groove and a second connecting groove, which are used for the transmission of gas and liquid respectively. The first connecting groove is connected to the first channel to ensure the transmission of gas; the second connecting groove is connected to the second channel to ensure the transmission of liquid. The design of the connecting groove 132 enables the gas and liquid to be smoothly distributed from the main channel 131 to the inside of the guide seat 130, ensuring the independent paths of the cleaning liquid and gas to flow to the first annular groove and the second annular groove, avoiding cross interference between gas and liquid. The connecting groove 132 provides a stable gas-liquid transmission channel, ensures the efficient distribution of the cleaning liquid and gas, improves the formation effect of the double blocking layer, and ensures the stability and accuracy of the cleaning process.

[0073] A third annular groove and a fourth annular groove are provided on the outer peripheral side of the flow guide seat 130, which are connected to the first connecting groove and the second connecting groove respectively. The third annular groove is used for gas transmission, and the fourth annular groove is used for liquid transmission. The design of the annular groove ensures that the gas and liquid are evenly distributed in the edge area of ​​the flow guide seat 130. The gas in the third annular groove and the liquid in the fourth annular groove form outer and inner layered blockages respectively, thereby achieving uniform gas-liquid distribution. The structural design of the annular groove provides good gas-liquid layered transmission, effectively forms a double-layer blocking protection, prevents the penetration of the cleaning liquid, and improves the stability and cleaning effect of the cleaning system.

[0074] The sealing ring 133 can be installed in the third annular groove and the fourth annular groove to achieve the sealing of the annular groove and ensure that the gas and liquid do not leak during the transmission process. The function of the sealing ring 133 is to enhance the sealing effect of the annular groove, prevent gas or liquid from leaking from the annular groove, and ensure the stability of the gas-liquid distribution. Common materials for the sealing ring 133 include corrosion-resistant materials such as silicone and fluororubber, which are suitable for being in a gas-liquid pressure environment for a long time. The design of the sealing ring 133 ensures the sealing effect of the gas and liquid in the annular groove, prevents leakage, and further improves the cleaning efficiency and transmission stability of the cleaning mechanism 100.

[0075] An annular groove is provided at the drainage surface of the drainage member 150 for installing the annular assembly 160. The annular assembly 160 is composed of a plurality of concentrically arranged annular members, which can be detachably installed in the annular groove to form a modular structure, which is convenient for adjustment for wafers 900 of different sizes. Through the multi-layer concentric structure of the annular assembly 160, when the cleaning device needs to be adjusted to adapt to wafers 900 of different sizes, it is only necessary to remove several annular members in the annular groove close to the drainage seat 130, and then put the extension ring 170 of the appropriate size into the vacancy of the annular groove, so as to effectively extend the coverage of the drainage seat 130 and provide accurate double blocking for wafers 900 of different sizes. In practical applications, the annular members in the annular assembly 160 are usually made of high-strength wear-resistant materials, such as hard plastics or corrosion-resistant alloys, so as to withstand the scouring of gas and cleaning liquid for a long time during the cleaning process. The detachable design makes it easier and faster to maintain and adjust the equipment. The modular design of the ring assembly 160 and the extension ring 170 enables the cleaning device to flexibly adapt to wafers 900 of different sizes, ensuring uniform distribution of the gas-liquid blocking layer on the back of wafers 900 of various sizes. This flexibility effectively improves the adaptability of the cleaning device and can maintain a stable cleaning effect and a double sealing blocking effect in the cleaning of wafers 900 of different sizes.

[0076] The extension ring 170 can be installed in the annular assembly 160, and an extension channel 171 is provided inside. The extension channel 171 includes a third channel and a fourth channel. The design of the extension ring 170 allows it to cooperate with other annular parts in the annular groove, and a concentric fifth annular groove and a sixth annular groove are provided on the side of the extension ring 170 away from the guide member 150, which are respectively connected to the third channel and the fourth channel of the extension channel 171. The extension ring 170 fits with other annular parts of the annular assembly 160 to provide a suitable double blocking layer for wafers 900 of different sizes. At the same time, the inner and outer peripheral side walls of the extension ring 170 fit the guide seat 130 and the adjacent annular parts respectively, ensuring the sealed transmission of gas and liquid, and filling the possible gaps to prevent the infiltration of cleaning liquid. The setting of the extension ring 170 enhances the adaptability of the cleaning system. By simply replacing the extension ring 170, it can adapt to wafers 900 of different sizes to ensure the continuity and sealing effect of gas and liquid flow. This design improves the versatility and efficiency of the cleaning mechanism 100, so that it can still maintain efficient cleaning and double sealing effects when facing different wafer 900 sizes.

[0077] Among them, it is necessary to pay attention to the matching design of the annular assembly 160 and the extension ring 170. In the semiconductor cleaning device, in order to adapt to wafers 900 of different sizes, the matching design of the annular assembly 160 and the extension ring 170 provides the advantages of modularity and flexibility. Since the sizes of wafers 900 are usually concentrated in several standard specifications, the cleaning device only needs to set corresponding annular parts and extension rings 170 for these common specifications to achieve efficient adaptation to wafers 900 of different sizes. The annular assembly 160 is composed of a plurality of concentric annular parts. According to the actual size of the wafer 900, several annular parts close to the guide seat 130 can be removed, and then the extension ring 170 of the matching size can be placed in the vacant position of the annular groove. The extension ring 170 is precisely designed, and its outer diameter matches the inner diameter of the annular part corresponding to the size of the target wafer 900, so that the original annular part can be accurately replaced. This modular design allows the cleaning device to quickly switch between wafer 900 support and sealing structures of different sizes by simply replacing the combination of the annular member and the extension ring 170, thereby providing a suitable double sealing blocking layer for the back of the wafer 900.

[0078] In this embodiment, due to the matching design of the ring part and the extension ring 170, the ring assembly 160 can adjust the radial size by increasing or decreasing the number of ring parts according to the size of the target wafer 900, so as to be suitable for wafers 900 of different sizes. Therefore, it effectively solves the problem that the cleaning device in the prior art can only be applied to fixed sizes, thereby realizing the adaptability and versatility of the cleaning device to wafers 900 of various sizes, and significantly improving the flexibility and application range of the cleaning device.

[0079] The semiconductor cleaning device further optimizes the structure of the fifth annular groove and the sixth annular groove of the extension ring 170, and enhances the spraying effect of the gas and the liquid by setting the third preset angle and the fourth preset angle, so as to ensure that the blocking layer forms a stable protection on the back of the wafer 900. The following is a detailed description of the structural construction, design function, practical application example and technical effect of each element and mechanism in claim 4.

[0080] In some embodiments, the opening of the fifth annular groove is oriented to form a third preset angle with the rotation axis of the material seat 120, and the opening of the sixth annular seat is oriented to form a fourth preset angle with the rotation axis of the material seat 120.

[0081] The fifth annular groove and the sixth annular groove are respectively provided on the outer peripheral surface of the extension ring 170 for transmitting gas and liquid. The fifth annular groove is connected to the third flow channel for transmitting gas, and the sixth annular groove is connected to the fourth flow channel for transmitting liquid. The opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat 120, while the opening direction of the sixth annular groove forms a fourth preset angle with the rotation axis of the material seat 120. The setting of these angles optimizes the injection direction of gas and liquid on the back side of the wafer 900. By designing the third preset angle and the fourth preset angle, the gas and liquid can be injected onto the back side of the wafer 900 at the best angle to ensure the formation of a stable gas-liquid blocking layer. This angle design enhances the coverage and thickness of the blocking layer by controlling the injection direction, and effectively prevents the cleaning liquid from penetrating into the gap at the edge of the wafer 900. Different preset angles can optimize the flow path of gas and liquid, avoid mutual interference between gas and liquid on the back side, and further improve the double blocking effect.

[0082] In some embodiments, the semiconductor cleaning device further adds structures such as a rotating shaft 700, a driving motor 300, a liquid collector 200, a box body 500, and a control cabinet 600. These components and structural designs further improve the operating convenience and cleaning efficiency of the device.

[0083] The rotating shaft 700 is a core transmission component for connecting and driving the material seat 120, the flow guide seat 130 and the flow guide member 150. Its axis is coaxially arranged with the rotation axis of the material seat 120, the flow guide seat 130 and the flow guide member 150 to realize the synchronous rotation of each part. The rotating shaft 700 realizes the synchronous drive of the material seat 120, the flow guide seat 130 and the flow guide member 150 through a coaxial design, ensuring that each component maintains a consistent rotation speed and direction during the cleaning process. This design helps to evenly distribute the cleaning liquid and gas, and avoids the problem of unstable blocking layer caused by different rotation speeds. In practice, the rotating shaft 700 can be made of high-strength steel or corrosion-resistant alloy to adapt to the mechanical stress caused by rotation and the corrosive environment of the cleaning liquid. In addition, through the coaxial arrangement, the rotating shaft 700 realizes the synchronous rotation of multiple components in the cleaning mechanism 100, making the blocking layer more uniform and stable, and effectively improving the cleaning efficiency and overall cleanliness.

[0084] The drive motor 300 is connected to the rotating shaft 700, and the output shaft of the drive motor 300 is connected to the rotating shaft 700 through a transmission mechanism, providing rotational power for the material seat 120, the flow guide seat 130 and the flow guide member 150, wherein the transmission mechanism can be a coupling. The drive motor 300 outputs stable power, so that the rotating shaft 700 and various rotating parts can achieve synchronous and efficient operation, improve the stability of the cleaning process, ensure the uniform distribution of the cleaning liquid, and further improve the cleaning effect.

[0085] The liquid collector 200 includes an annular liquid collecting groove 210, which is coaxially arranged on the outside of the rotating shaft 700, and the notch position is lower than the drainage surface of the drainage member 150. The annular design of the liquid collector 200 can effectively collect the cleaning liquid discharged by the drainage member 150. Since the notch is lower than the drainage surface, the cleaning liquid can enter the annular liquid collecting groove 210 under the combined action of centrifugal force and gravity after the cleaning process is completed, preventing the cleaning liquid from being retained inside the equipment. The coaxial design of the liquid collector 200 ensures that the cleaning liquid can flow smoothly into the annular liquid collecting groove 210, reduces the residual cleaning liquid, ensures the cleanliness and stability of the cleaning mechanism 100, and extends the service life of the equipment. The rotating shaft 700 is connected to the liquid collector 200 through a sleeve 800, and a bearing is installed in the sleeve 800. The rotating shaft 700 is connected to the sleeve 800 through the bearing.

[0086] The box 500 includes a first accommodating space, in which the material seat 120, the flow guide seat 130, the flow guide member 150 and the nozzle are all arranged to isolate the splashing liquid and gas during the cleaning process, and the liquid collector 200 is fixedly installed in the box 500. The design of the box 500 provides a closed cleaning environment, which effectively prevents the cleaning liquid and gas from splashing to the outside. At the same time, the accommodating space in the box 500 makes the layout of the various components of the cleaning device more compact, which is convenient for management and maintenance. The closed design of the box 500 avoids the leakage of the cleaning liquid and gas, provides a safe and clean cleaning space, effectively controls the environmental pollution during the cleaning process, and meets the cleanliness requirements of semiconductor production. The control cabinet 600 includes a second accommodating space, in which the box 500 is arranged, and the control cabinet 600 is usually equipped with a control system for controlling various parameters (such as rotation speed, cleaning liquid flow, gas pressure, etc.) during the cleaning process. The design of the control cabinet 600 can centrally manage the operating status of the cleaning system. The layout of the control cabinet 600 not only protects the control system from the influence of the cleaning fluid, but also allows operators to easily adjust and monitor various parameters during the cleaning process. The setting of the control cabinet 600 not only ensures the safety of the cleaning device operation, but also realizes the precise control of the cleaning process, ensuring that the cleaning process is efficient and stable, meeting the high requirements of semiconductor manufacturing for cleanliness and automation.

[0087] During the start and stop of the drive motor 300, the rotation speed of the wafer 900 changes during the acceleration or deceleration stage, which may indeed cause uneven centrifugal force on the surface of the wafer 900. Such a change in rotation speed will make the spraying effect of the cleaning liquid and the inert gas less stable than at a constant rotation speed, thereby increasing the probability that the cleaning liquid is obliquely sputtered and enters the gap between the wafer 900 and the guide seat 130 or the guide member 150. Therefore, in order to reduce the probability of liquid entering the gap during the start and stop stages of the drive motor 300, the present application proposes a control method for controlling a semiconductor cleaning device, which specifically includes:

[0088] The method for controlling the injection of gas and liquid during the start-up phase of the driving motor 300 is as follows:

[0089] The real-time rotation speed of the driving motor 300 and the rotation speed change rate of the driving motor 300 are obtained.

[0090] The initial ejection speed of the gas and the initial ejection speed of the liquid are obtained according to the real-time rotation speed of the driving motor 300 .

[0091] According to the real-time rotation speed and rotation speed change rate of the driving motor 300 during acceleration, and combined with the interaction between the two jet fluids of gas and liquid, the gas ejection speed and the liquid ejection speed are adjusted, and a stable jet flow is formed after the rotation speed of the driving motor 300 is stabilized.

[0092] Furthermore, the injection effect is monitored through a feedback system to ensure that the injection angle and speed of gas and liquid are always kept within the set range. If there is any deviation, it is adjusted in time.

[0093] The real-time speed of the drive motor 300 and the speed change rate of the drive motor 300 are obtained as follows:

[0094] Start the drive motor 300 and monitor the real-time speed ω(t) and acceleration of its output shaft

[0095] The injection formula of the gas and the injection control formula of the liquid during the start-up phase of the drive motor 300 are as follows:

[0096]

[0097] v g (t) is the gas jet velocity, which indicates the velocity of the gas ejected from the first circular groove, and describes the intensity and flow velocity of the gas jet. The unit is m / s. It determines the contribution of the gas to the formation of the blocking layer. A higher jet velocity will increase the guiding and disturbance effect of the gas on the flow direction of the liquid.

[0098] v l (t) is the liquid injection velocity, which indicates the velocity of the liquid ejected from the second circular groove and describes the intensity and flow rate of the liquid injection. The unit is m / s. It affects the movement path and coverage effect of the liquid under the guidance of the gas. The combination with the gas velocity determines the stability of the liquid distribution on the back side of the wafer 900.

[0099] v g0 and v l0 They are the initial velocity of the gas during the startup phase and the base velocity of the liquid injection. They serve as the benchmark for the injection velocity to ensure a stable base value when adjusting.

[0100] k g1 and k l1are the speed response gain coefficients, which define how the injection velocity changes with the speed of the drive motor 300. They determine how much the gas and liquid injection velocity responds to the real-time speed of the motor. Higher coefficients make the injection velocity more sensitive to speed.

[0101] ω(t) is the real-time speed, which is the speed of the motor at any time, in rad / s or rpm. It can be used to reflect the motor status in real time and is a key variable for controlling the injection speed.

[0102] ω max It is the maximum stable speed, which is the maximum stable operating speed that the motor can reach. It is used as a reference value to normalize the current speed for easy control adjustment.

[0103] k g2 and k l2 are acceleration response gain factors, which define how the injection speed of gas and liquid is adjusted according to the acceleration or deceleration of the motor. They are used to adjust the injection speed when the motor starts or stops, and to compensate for the inertia effect of the fluid when the speed changes rapidly.

[0104] is the speed change rate, which is the instantaneous rate of change of the motor speed, reflecting the acceleration or deceleration, and the unit is rad / s

[0105] 2 , which can be used to adjust the injection speed in real time to cope with dynamic changes during motor starting or stopping.

[0106] The two formulas are designed to achieve precise control of the gas and liquid injection speeds during the start-up and stop phases to cope with the dynamic changes caused by the drive motor 300 rpm and the fluid interaction.

[0107] Explanation of the startup phase formula:

[0108] The basic injection velocity term (v g0 and v l0 ), these two basic items provide the initial injection speed in the startup phase, ensuring that the gas and liquid have sufficient speed to be injected at the moment the motor starts. At startup, a fixed initial injection speed is required to start the flow of the fluid and form an initial blocking layer. Regardless of the speed, the basic speed ensures that the system has a stable starting point.

[0109] Speed ​​gain term ( and ), as the motor starts, the speed gradually increases, which will cause changes in fluid behavior, such as increased centrifugal force. This gain term is used to dynamically adjust the injection speed as the motor speed increases. In practical applications, as the motor speed increases, the injection system needs to increase the injection speed accordingly to ensure that the gas and liquid can adapt to the increased centrifugal force. This term adjusts the injection speed through normalization (using the ratio of current speed to maximum speed) to keep it synchronized with the motor operation status.

[0110] Acceleration adjustment item ( and ), the startup phase is usually accompanied by significant acceleration (rapid increase in speed), which will produce inertial effects on the fluid. This term adjusts the injection velocity based on the acceleration to compensate for the fluid disturbance caused by acceleration. When the motor accelerates rapidly, the inertia of the fluid may cause changes in the injection path and stability, resulting in injection deviation or uneven flow. This acceleration term helps balance this change and provides a way to dynamically adjust the injection velocity based on the real-time acceleration to ensure stable fluid injection.

[0111] Coupling term (C(t)), during the injection process, the gas and liquid fluid flows will produce complex interactions in the contact area, such as fluid guidance, interference or fusion. This term is used to supplement the influence of these interactions on the injection velocity. The injection system needs to consider not only the independent gas and liquid flows, but also their interactive behavior in the contact area. Introducing the coupling term C(t) helps to reflect the dynamic influence between gas and liquid in the formula, so that the injection velocity can be adjusted more accurately according to these interactions. This term improves the uniformity and stability of the blocking layer, especially in the acceleration stage to prevent injection instability or fluid path interference.

[0112] In summary, the formula adjusts the injection speed by responding to changes in motor speed and acceleration in real time, so that the injection system always maintains a stable fluid flow during the motor startup process. Each gain and adjustment term takes into account the actual physical phenomena in the injection system, such as centrifugal force, inertia, and fluid interaction. This allows the formula to simulate and adjust the injection fluid behavior more realistically.

[0113] Therefore, by combining the base speed, speed gain, acceleration adjustment and coupling terms, the formula ensures that the injection speed of gas and liquid can be dynamically adjusted during the startup phase to prevent fluid turbulence or uneven injection, thereby maintaining a stable and uniform blocking layer.

[0114] Among them, the initial injection velocity (v g0 and v l0 ) is obtained as follows:

[0115] The driving motor 300 is set to be in a stationary state (ie, the rotation speed is zero) for the experiment.

[0116] Configure gas and liquid injection systems to ensure nozzle angles and fluid characteristics match actual operating conditions.

[0117] Measure the initial injection flow rate and start the injection system to spray gas and liquid at a constant initial pressure and flow rate.

[0118] Use a flow meter to measure the gas and liquid velocities at the nozzle outlet and take the average value as v g0 and v l0 The initial velocity.

[0119] Verify and adjust, adjust the injection pressure and flow rate, and conduct multiple experiments to confirm data stability and repeatability. If the data fluctuates greatly, calibrate by improving the nozzle design or optimizing the fluid pressure.

[0120] Speed ​​response gain factor (k g1 and k l1 The method of obtaining ) is as follows:

[0121] Set the basic experimental conditions at a constant initial injection velocity v g0 and v l0 Under the condition, the driving motor 300 is started and the rotation speed is gradually increased.

[0122] Measure the change in injection velocity at different speeds (e.g. 0%, 25%, 50%, 75%, 100% of the maximum speed ω max )Measure the injection velocity of gas and liquid. And record the relationship between injection velocity and motor speed.

[0123] Data fitting and calculation, using linear regression or polynomial fitting analysis, the relationship between the measured injection velocity change and the rotation speed is fitted into a linear model. And calculate k g1 and k l1 As the response coefficient of injection speed to changes in motor speed.

[0124] Verify the gain factor and repeat the experiment under different environmental and fluid conditions to ensure that k g1 and k l1 Can be used in practical applications.

[0125] Maximum stable speed (ω max ) is obtained as follows:

[0126] The drive motor 300 is started, and the rotation speed is gradually increased to the maximum value allowed by its technical specifications. The time when a stable operation state is reached is recorded.

[0127] Observe the stability and ensure that the motor runs at this speed for at least a certain period of time (for example, 5-10 minutes) to observe whether there is obvious vibration or instability.

[0128] Record the data and record the highest speed value under stable operation as ω max .

[0129] Acceleration response gain factor (k g2 and k l2 ) is obtained as follows:

[0130] Set the experimental conditions and set the motor to run under different acceleration (acceleration and deceleration) states.

[0131] Measure the dynamic response of the jet velocity, using an accelerometer to record the acceleration of the motor during starting and stopping The jet velocity changes of gas and liquid under these acceleration conditions are measured simultaneously.

[0132] Data Analysis,The dynamic response of the injection velocity and the motor acceleration are fitted into a model through regression analysis.

[0133] Determine k g2 and k l2 As a gain factor for adjusting the acceleration to the injection speed.

[0134] Verification and optimization, repeat the experiment under different motor acceleration and deceleration conditions to ensure that the obtained gain coefficient remains valid under different operating conditions.

[0135] According to the real-time rotation speed and rotation speed change rate of the driving motor 300 during the acceleration process, and in combination with the interaction between the two jet fluids of gas and liquid, the ejection speed of the gas and the ejection speed of the liquid are adjusted, and a stable jet flow is formed after the rotation speed of the driving motor 300 is stabilized. Specifically, in combination with the interaction between the two jet fluids of gas and liquid, the following steps are performed:

[0136] The coupling term C(t) is introduced. This formula is used to describe the interaction between the jet gas and the jet liquid in the contact area, especially the impact on the overall blocking effect when the gas and liquid flows jetted in the first circular groove and the second circular groove meet. Specifically, the interaction effect of the jetting velocities of the two fluids can be calculated.

[0137] C(t)=α·v g (t)·v l (t)·cos(θ g -θ l ).

[0138] in:

[0139] α is an adjustment factor used to describe the interaction strength between gas and liquid. Its specific value depends on the nozzle structure, fluid properties (such as viscosity and density), and device design. By adjusting α, the physical characteristics and operating conditions of different devices can be adapted so that the formula remains valid under different injection conditions.

[0140] θ g It is the gas injection angle, which is the angle between the gas injection direction and the guide surface. The unit is degree or radian, which determines the diffusion path of the gas during injection and the way it meets the liquid.

[0141] θ l It is the liquid injection angle, which is the angle between the liquid injection direction and the guide surface. The unit is degree or radian, which affects the directionality of the liquid flow and the way it intersects with the gas flow.

[0142] cos(θ g -θ l ) is the directional intersection factor, which indicates the angular influence between the injection directions and simulates the degree of intersection between the two fluids. g and θ l When approaching), cos(θ g -θ l ) is close to 1, indicating that there is a strong interaction between the two fluids. On the contrary, when the angle between the two is close to 90 degrees, cos(θ g -θ l ) is close to 0, and the interaction is weak.

[0143] The coupled term formula comprehensively reflects the dynamic behavior of the jet fluid in the device by considering the jet velocity, direction angle and interaction of the gas and liquid. The following are the reasons for adopting this formula:

[0144] First, in practical applications, the jet gas and liquid will produce complex interactions in the contact area, including guiding, interference or merging phenomena. By using α, velocity and angle factors, the formula can capture the impact of these interactions and more accurately adjust the jet velocity to maintain a stable blocking layer.

[0145] Secondly, cos(θ g -θ l ) reflects the influence of gas and liquid flow at different injection angles. When the two directions are consistent, the liquid is more easily guided by the gas to form a stable blocking layer; when the angle difference is large, the interaction is weakened and the stability of the blocking layer is reduced.

[0146] Moreover, α provides flexibility, allowing adjustments to different devices and injection conditions, ensuring that the formula can accurately reflect the interaction between gas and liquid in a variety of practical application scenarios.

[0147] In summary, this formula accurately simulates the interaction between gas and liquid jets through the coupling of speed and angle, helping the control system to adjust the jet speed in real time, thereby optimizing the blocking effect and maintaining stable operation of the cleaning device.

[0148] The proportional constant α needs to be determined through experiments and data analysis to accurately reflect the interaction between gas and liquid under different device conditions and injection environments. The following are detailed steps:

[0149] First, the experimental device is prepared. The experimental system is the same as the actual cleaning device, including the first and second circular grooves, the drive motor 300, and the gas and liquid injection system. A high-speed camera and a flow rate sensor are installed in the injection area to capture the speed and intersection of the injection fluid, and an angle sensor is installed on the device to measure the angle of the gas and liquid injection in real time.

[0150] Secondly, data collection, adjusting the speed and speed change rate of the drive motor 300, respectively testing different gas and liquid injection speeds and injection angle combinations. High-speed cameras and sensors are used to record the intersection of gas and liquid injections and analyze the interaction of the injection fluids. Then, flow meters and visual analysis software are used to measure the thickness and stability of the blocking layer at different injection speeds and angles.

[0151] Next, α was preliminarily calculated, and the data on the spraying effects measured at different speed and angle combinations in the experiment were organized into a data table, marking the stability and effect of the blocking layer under each combination.

[0152] Set up the equation:

[0153] C(t)=α·v g (t)·v l (t)·cos(θ g -θ l ).

[0154] Substitute the experimental data and calculate the α value for each combination.

[0155] Then, data fitting and model optimization are performed to fit the α value calculated in the experiment to the corresponding injection conditions to find the α model that best explains the data (such as linear regression or multivariate regression analysis). The fitting model is adjusted to ensure that the α value can adapt to different injection speeds and angles in actual use.

[0156] Next, verify and calibrate, run the adjusted α value in a real cleaning device environment, and verify its effect under different working conditions. Calibrate α, and fine-tune α according to the gap between the actual spraying effect and the expected effect to ensure that the stability and thickness of the blocking layer remain within the ideal range under various working conditions.

[0157] Finally, establish standards and documentation, record the verified and calibrated α constants, and establish a database or lookup table for specific values ​​under different conditions. In addition, the experimental process, data analysis methods, fitting models and verification results should be organized to form a complete experimental report to provide a basis for subsequent application and optimization.

[0158] It should be noted that the value of α may be affected by factors such as ambient temperature and the physical properties of the ejecta (such as viscosity and density). Therefore, the experiment should try to cover a variety of conditions to obtain a more generally applicable α. In addition, in modern automated control, dynamic adjustment of α can be achieved through adaptive algorithms, so that it can be automatically optimized according to device feedback in real-time applications. In this way, α can better reflect the interaction between gas and liquid in the ejection area in practical applications, thereby ensuring stable and efficient formation of the blocking layer.

[0159] The method for controlling the injection of gas and liquid during the stopping phase of the driving motor 300 is as follows:

[0160] The real-time rotation speed of the driving motor 300 and the rotation speed change rate of the driving motor 300 are obtained.

[0161] The gas injection speed and the liquid injection speed are obtained according to the real-time rotation speed of the driving motor 300 and the rotation speed change rate of the driving motor 300 .

[0162] According to the interaction between the injected gas and the injected liquid, a corrected gas injection velocity and a corrected liquid injection velocity are obtained.

[0163] According to the real-time rotation speed and the rotation speed change rate of the driving motor 300, the real-time injection speed of the gas and the real-time injection speed of the liquid are adjusted to keep the blocking layer stable.

[0164] When the rotation speed of the driving motor 300 is close to zero, the real-time injection speed of the gas and the real-time injection speed of the liquid are gradually reduced to prevent the liquid from flowing back or penetrating into the gap of the device.

[0165] Furthermore, the real-time injection conditions of the gas and the liquid can be continuously monitored through the feedback system, and the injection speed and angle can be adjusted as needed.

[0166] The real-time speed of the drive motor 300 and the speed change rate of the drive motor 300 are obtained as follows:

[0167] Gradually reduce the speed of the drive motor 300 and monitor the real-time speed of the output shaft ω stop (t) and deceleration

[0168] The gas ejection velocity v g (t) and liquid ejection velocity v l (t):

[0169]

[0170] in:

[0171] v gfinal and v lfinal is the final injection velocity, which represents the basic injection velocity of gas and liquid reached during the motor deceleration stage, in m / s. It provides a stable injection benchmark during the stop stage to ensure that the fluid flow has sufficient basic injection force.

[0172] m g1 and m l1 It is the speed attenuation coefficient, which is used to adjust the extent to which the injection speed decreases with the speed. It can be used to control how the injection speed is linearly attenuated according to the reduction of the real-time motor speed to ensure that the injection speed changes synchronously with the motor speed.

[0173] ω stop (t) is the real-time speed, which indicates the current speed of the motor in the stop phase. The unit is rad / s or rpm. It can reflect the dynamic state of the motor in real time so as to adjust the injection speed to match the current motor state.

[0174] ω max It is the maximum stable speed, which indicates the maximum stable operating speed that the motor can reach. The unit is rad / s or rpm. It is used as a standardized benchmark to normalize the current speed so that the injection speed adjustment has a relative reference frame.

[0175] m g2 and m l2 It is the deceleration adjustment factor, which reflects how the injection speed is adjusted according to the deceleration rate. It compensates for the inertia effect of the motor during deceleration. Higher deceleration will cause the injection path of the fluid to be unstable, and this item helps to balance the inertia change of the fluid.

[0176] It is the speed change rate, or deceleration, which indicates the rate of change of the motor speed during the stop phase, indicating the motor's deceleration, in rad / s 2 , which can be used to dynamically reflect the acceleration or deceleration behavior of the motor during stoppage, affecting the adjustment of the injection speed to compensate for the behavior of the fluid under the action of inertial force.

[0177] C(t) is a coupling term that reflects the interaction between gas and liquid jets, and reflects the interference and guidance of fluid flow in the jet intersection area. The unit is m / s. By comprehensively considering the jet velocity and angle relationship between gas and liquid, it can be ensured that the adjustment of the jet velocity during the stop phase can balance the fluid interaction and keep the blocking layer stable.

[0178] Furthermore, during the stopping phase, the interaction between the gas and liquid jets becomes complex. The coupling term C(t) provides a correction factor that captures the effects of this interaction on the jet velocity, such as gas guiding the liquid flow, liquid obstruction of the gas flow, or mixing effects. Since changes in motor speed and deceleration during the stopping phase may cause jet instability, the coupling term is used to smooth these changes, making the jet velocity more stable and preventing sudden changes in the jet from affecting the thickness and uniformity of the blocking layer. The coupling term helps to make real-time adjustments based on actual jet conditions to cope with the uncertainty of fluid flow during motor stopping. It ensures that the adjustment of the jet velocity is closer to physical reality, thereby maintaining the integrity and stability of the blocking layer during the stopping process.

[0179] Further, a detailed explanation of the stopping phase formula:

[0180] The basic injection velocity term (v gfinal and v lfinal ), the basic speed term is used to provide a stable injection speed starting point, ensuring that the injection of gas and liquid can maintain sufficient power during the entire deceleration process to form and maintain the blocking layer during the stopping stage. This term ensures that the injection speed has a basic initial value during the process of gradually reducing the speed of the drive motor 300, preventing the injection flow from suddenly decreasing or becoming unstable when the motor just starts to decelerate.

[0181] Speed ​​attenuation term ( and ), during motor stop, as the speed decreases, the fluid behavior is affected by the weakening of centrifugal force. This item dynamically reduces the injection speed based on the ratio of the real-time speed to the maximum stable speed. Through this attenuation item, the injection speed is gradually reduced as the motor speed gradually decreases. This allows the injection speed to be synchronized with the state of the motor during deceleration, preventing excessive injection from causing fluid instability or uneven blocking layer thickness.

[0182] Deceleration adjustment item ( and ), the motor deceleration during the stop phase is accompanied by significant deceleration, which will cause the influence of fluid inertia force, which may cause the jet flow to deviate or become unstable. This adjustment item is used to compensate for the inertia effect generated during the deceleration process to ensure the stability of the jet. The deceleration item dynamically adjusts the jet speed according to the rate of change of motor deceleration. If the deceleration is large, the inertia force will significantly affect the stability of the fluid. This item helps adjust the jet speed to balance the inertia effect and maintain a stable jet flow.

[0183] Coupling term (C(t)), During the stopping phase, the interaction between the gas and liquid fluids still exists, especially when the jet velocity decreases and the fluid dynamics change. The coupling term is used to reflect the adjustment and compensation of these interactions.

[0184] Logic: The coupling term allows the jet velocity to be fine-tuned based on the intersection and interaction of the gas and liquid flows during the stopping process. It takes into account the effects of both in the contact area, helping to maintain the thickness and uniformity of the barrier layer and avoiding fluid infiltration or barrier layer rupture due to instability during the stopping process.

[0185] In summary, when the motor stops, the speed and deceleration are constantly changing, which directly affects the injection behavior of the fluid. By including the speed and deceleration terms, the formula allows the injection speed to be dynamically adjusted according to the real-time motor state to prevent sudden speed changes from causing unstable injection. In the stopping stage, the inertial effect has a greater impact on the injection fluid, especially when the deceleration is large. Through the deceleration adjustment term, the injection speed can respond to the rate of change of deceleration, balance the inertial effect of the fluid, and maintain the stability of the fluid flow. As the motor speed decreases, the centrifugal force weakens, and the fluid may lose the stability of the injection path. The speed attenuation term and the coupling term are used in combination to ensure that the injection speed can be gradually reduced during the motor deceleration process and maintain the integrity of the blocking layer. The introduction of the coupling term is intended to take into account the dynamic interaction between gas and liquid. It helps adjust the injection speed during the stopping stage so that it can adapt to the complex flow behavior caused by the intersection of fluids, ensure that the blocking layer remains stable when stopped, and prevent the liquid from penetrating into the gap of the device due to uneven injection.

[0186] According to the interaction between the injected gas and the injected liquid, a corrected gas injection velocity and a corrected liquid injection velocity are obtained, wherein according to the interaction between the injected gas and the injected liquid, specifically:

[0187] The coupling term C(t) is introduced to calculate the interaction effect between the ejection velocities of the two fluids.

[0188] The coupling term is C(t), which depends on the jet velocities of the gas and liquid, the jet directions, and the contact area between the two.

[0189] C(t)=α·v g (t)·vl (t)·cos(θ g -θ l ).

[0190] in:

[0191] α is the proportionality constant of the interaction and is adjusted based on the nozzle structure and fluid physics.

[0192] θ g and θ l are the gas and liquid injection angles, respectively.

[0193] cos(θ g -θ l ) represents the angular influence between the injection directions, simulating the degree of intersection between the two fluids.

[0194] The above contents described in this specification are merely examples of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, as long as they do not deviate from the contents of the present specification or exceed the scope defined by the claims, they shall all fall within the protection scope of the present invention.

Claims

1. A semiconductor cleaning device, the cleaning device is used to remove impurities on the surface of a wafer, characterized in that: include: A material seat, the material seat rotates in a controlled manner, and the material seat includes a placement plane for placing a wafer; A guide seat, the guide seat rotates in a controlled manner, and the rotation axis of the guide seat is coaxially arranged with the rotation axis of the material seat, the guide seat includes a guide surface, the rotation axis of the guide seat is perpendicular to the guide surface, and the edge contour of the guide surface is circular, the radius corresponding to the edge contour of the guide surface is smaller than the radius of the wafer coaxially placed on the placement plane, the guide surface side of the guide seat is provided with a first annular groove and a second annular groove, the first annular groove and the second annular groove are concentrically arranged, and the radius of the first annular groove is smaller than the radius of the second annular groove, the material seat A first flow channel and a second flow channel are provided in the material holder, one end of the first flow channel is connected to the first annular groove, the other end of the first flow channel is connected to an air source, one end of the second flow channel is connected to the second annular groove, and the other end of the second flow channel is connected to a liquid source, wherein the opening direction of the first annular groove forms a first preset angle with the rotation axis of the material holder, the opening direction of the second annular groove forms a second preset angle with the rotation axis of the material holder, and a first gap exists between the guide surface and the placement plane, so that the placement plane of the material holder protrudes from the guide surface of the guide seat; A flow guide member, the flow guide member rotates in a controlled manner, and the rotation axis of the flow guide member is coaxially arranged with the rotation axis of the flow guide seat, the flow guide member comprises a flow guide surface, the flow guide surface is perpendicular to the rotation axis of the flow guide member, and a second gap exists between the flow guide surface of the flow guide member and the flow guide surface of the flow guide seat, so that the flow guide surface of the flow guide seat protrudes from the flow guide surface of the flow guide member; A cleaning component is arranged on a side of the material seat away from the guide member, and the cleaning component comprises a nozzle, and a nozzle of the nozzle is arranged toward the placement plane.

2. A semiconductor cleaning device according to claim 1, characterized in that: A first main flow channel is provided in the flow guide seat, and the number of the first main flow channels provided in the flow guide seat is several, and one end of the several first main flow channels away from the first annular groove is connected to the inside of the first main flow channel, and the first main flow channel is connected to the gas source through a pipeline; A second main flow channel is provided in the flow guide seat. The number of the second main flow channels provided in the flow guide seat is several. One end of each second main flow channel away from the second annular groove is connected to the interior of the second main flow channel. The second main flow channel is connected to a liquid source through a pipeline.

3. A semiconductor cleaning device according to claim 1, characterized in that: The guide seat has a first connecting groove communicating with the first flow channel and a second connecting groove communicating with the second flow channel formed inside, and a third annular groove communicating with the first connecting groove and a fourth annular groove communicating with the second connecting groove formed on the outer circumference of the guide seat; The drainage surface of the drainage member is provided with an annular embedding groove, and the drainage member comprises an annular component, and the annular component is detachably arranged in the annular embedding groove, and the annular component is composed of a plurality of concentrically arranged annular components; An extension ring, wherein a third flow channel and a fourth flow channel are provided inside the extension ring, and a fifth annular groove and a sixth annular groove are provided concentrically on the side of the extension ring away from the guide member, one end of the third flow channel is connected to the fifth annular groove, one end of the fourth flow channel is connected to the sixth annular groove, and the extension ring is configured so that when the annular member closest to the guide seat is replaced by the extension ring, the outer peripheral side wall of the extension ring is fitted with the inner peripheral side wall of the adjacent annular member, and the inner peripheral side wall of the extension ring is fitted with the outer peripheral side wall of the guide seat, so that the other end of the third flow channel in the extension ring is connected to the third annular groove, and the other end of the fourth flow channel in the extension ring is connected to the fourth annular groove.

4. A semiconductor cleaning device according to claim 3, characterized in that: The opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat, and the opening direction of the sixth annular seat forms a fourth preset angle with the rotation axis of the material seat.

5. A semiconductor cleaning device according to any one of claims 1 to 4, characterized in that: Also includes: A rotating shaft, the rotating shaft is controlled to rotate, the rotating shaft is connected to the material seat, the rotating shaft is connected to the flow guide seat, the rotating shaft is connected to the flow guide member, and the axis of the rotating shaft is coaxially arranged with the rotation axis of the material seat, the rotation axis of the flow guide seat and the rotation axis of the flow guide member; A driving motor, wherein the output shaft of the driving motor is drivingly connected to the rotating shaft.

6. A semiconductor cleaning device according to claim 5, characterized in that: Also includes: The liquid collector comprises an annular liquid collecting trough, which is coaxially arranged outside the rotating shaft, and the notch of the liquid collecting trough is arranged lower than the drainage surface on the drainage member.

7. A semiconductor cleaning device according to any one of claims 1 to 4, characterized in that: Also includes: A box body, wherein the box body comprises a first accommodating space, and the material seat, the flow guide seat, the flow guide member and the nozzle are all arranged in the first accommodating space; A control cabinet, wherein the control cabinet comprises a second accommodating space, and the box body is arranged in the second accommodating space.

8. A control method for a semiconductor cleaning device as claimed in claim 5, characterized in that: include: The method for controlling the injection of gas and liquid during the start-up phase of the drive motor comprises: The real-time rotation speed of the drive motor and the rotation speed change rate of the drive motor are obtained. The initial ejection speed of the gas and the initial ejection speed of the liquid are obtained according to the real-time rotation speed of the driving motor. According to the real-time rotation speed and rotation speed change rate of the driving motor during acceleration, and in combination with the interaction between the injected gas and the injected liquid, the injection speed of the gas and the injection speed of the liquid are adjusted, and a stable injection flow is formed after the rotation speed of the driving motor stabilizes.

9. A control method for a semiconductor cleaning device according to claim 8, characterized in that: Also includes: The method for controlling the injection of gas and liquid by the driving motor during the stop phase comprises: The real-time rotation speed of the drive motor and the rotation speed change rate of the drive motor are obtained. The gas injection speed and the liquid injection speed are obtained according to the real-time rotation speed of the driving motor and the rotation speed change rate of the driving motor. According to the interaction between the injected gas and the injected liquid, a corrected gas injection velocity and a corrected liquid injection velocity are obtained. According to the real-time rotation speed and the rotation speed change rate of the driving motor, the real-time injection speed of the gas and the real-time injection speed of the liquid are adjusted to keep the blocking layer stable.

10. A control method for a semiconductor cleaning device according to claim 8 or 9, characterized in that: The interaction between the injected gas and the injected liquid is obtained by the following formula: C(t)=α·v g (t)·v l (t)·cos(θ g -θ l )。 in: α is the proportionality constant of the interaction, which is adjusted based on the nozzle structure and fluid physical properties; θ g are the gas injection angles, respectively; θ l is the liquid injection angle; v g is the gas jet velocity; v l (t) is the liquid injection velocity.

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