Power semiconductor packaging device and power control method

Abstract

The invention discloses a power semiconductor packaging device and a power control method. The power semiconductor packaging device comprises a substrate; a semiconductor chip; the vapor chamber comprises an evaporation side, a condensation side and a pressure detection channel, the evaporation side is in thermal contact with the second face, a liquid storage cavity used for storing a cooling medium is formed in the vapor chamber, and the pressure detection channel is arranged on the condensation side and communicates with the liquid storage cavity; the radiator is connected with the condensation side; the pressure detection device comprises a pressure detection piece and a distance detection sensor, the pressure detection piece is arranged in the pressure detection channel and can reciprocate in the extension direction of the pressure detection channel, and the distance detection sensor faces the pressure detection piece and is used for detecting the distance between the distance detection sensor and the pressure detection piece. The working power of the power semiconductor chip can be adjusted through the pressure detection device, so that high-efficiency operation of the vapor chamber is ensured, and meanwhile, the situation that the heat dissipation efficiency is affected by too high internal pressure is avoided.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a power semiconductor packaging device and a power control method. Background Art

[0002] As electronic devices develop towards high power and high density, especially the application of power semiconductor devices, the heat dissipation problem of power semiconductors has become increasingly prominent. Power semiconductors generate a lot of heat during operation. If the heat cannot be dissipated in a timely and effective manner, it may cause the device to overheat, reduce the working efficiency of the device, or even damage the device. Therefore, how to effectively manage heat in power semiconductor packaging has become an important research direction in semiconductor packaging technology.

[0003] Most existing power semiconductor packaging solutions use thermally conductive materials to reduce the operating temperature of power semiconductors. However, as power density increases, traditional heat dissipation methods often cannot meet the growing heat dissipation needs, especially in applications where efficient heat dissipation is required and space is limited.

[0004] In order to solve these problems, a heat spreader-based cooling technology has recently emerged. This technology uses a heat spreader to quickly spread heat to a larger area, thereby improving heat dissipation efficiency. However, existing heat spreader solutions mostly rely on simple heat conduction or heat dissipation devices, fail to fully consider the impact of pressure changes inside the heat spreader on the cooling system, and fail to provide effective pressure detection methods. When the heat spreader is overloaded, real-time monitoring and adjustment cannot be performed. Summary of the invention

[0005] The present application provides a power semiconductor packaging device and a power control method, in order to overcome the problem in the prior art that when a heat spreader is overloaded, real-time monitoring and regulation cannot be performed.

[0006] This application solves the above technical problems through the following technical solutions: A power semiconductor packaging device, comprising: substrate; a semiconductor chip comprising a first surface and a second surface opposite to the first surface, wherein the first surface is mounted on the substrate; A vapor chamber, comprising an evaporation side, a condensation side and a pressure detection channel, wherein the evaporation side is in thermal contact with the second surface, a liquid storage chamber for storing a cooling medium is provided inside the vapor chamber, the cooling medium is configured to evaporate when heated on the evaporation side and condense when cooled on the condensation side, and the pressure detection channel is provided on the condensation side and communicated with the liquid storage chamber; A radiator connected to the condensation side; The pressure detection device includes a pressure detection member and a distance detection sensor. The pressure detection member is arranged in the pressure detection channel and can move back and forth along the extension direction of the pressure detection channel. The distance detection sensor is arranged toward the pressure detection member and is used to detect the distance to the pressure detection member. The pressure detection member is configured as follows: when the internal pressure of the heat spreader increases, the pressure detection member moves outward along the extension direction of the pressure detection channel; when the pressure of the heat spreader decreases, the pressure detection member moves inward along the extension direction of the pressure detection channel.

[0007] A power control method for a power semiconductor package device, comprising the power semiconductor package device as described above, the power control method comprising: Acquiring a detection value of the distance detection sensor; When the detection value decreases, the power of the chip is reduced.

[0008] The positive progressive effect of the present application is that the present application can efficiently transfer heat from the semiconductor chip to the cooling medium and achieve heat dissipation by introducing a heat dissipation design that combines a heat spreader and a cooling medium in a power semiconductor packaging device. In particular, the pressure detection device can monitor the pressure changes inside the heat spreader in real time, and feedback the pressure state by cooperating with the distance detection sensor. When the pressure increases, the pressure detection component moves upward, and the distance detected by the distance detection sensor becomes smaller. The pressure state information can be used to adjust the operating power of the power semiconductor chip, thereby ensuring the efficient operation of the radiator while avoiding overheating or overload, and optimizing the working environment of the semiconductor chip. Through this intelligent dynamic adjustment mechanism, the present invention not only improves the heat dissipation efficiency, but also enhances the accuracy of power regulation and the reliability of the system, thereby extending the service life of the power semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a schematic diagram of the first state structure of a power semiconductor package device according to an embodiment of the present application; Figure 2 This is a schematic diagram of the second state structure of a power semiconductor package device according to an embodiment of the present application.

[0010] Description of reference numerals: Substrate 100; semiconductor chip 200; first surface 210; second surface 220; heat spreader 300; evaporation side 310; condensation side 320; liquid storage chamber 330; pressure detection channel 340; radiator 400; pressure detection member 410; fixing member 420; elastic member 430; distance detection sensor 440; limit member 450; limit switch 460. DETAILED DESCRIPTION

[0011] The present application is further described below by way of examples, but the present application is not limited to the scope of the examples.

[0012] like Figure 1 As shown, the present embodiment provides a power semiconductor package device, which includes a substrate 100, a semiconductor chip 200, a heat spreader 300, a heat sink 400 and a pressure detection device. The semiconductor chip 200 includes a first surface 210 and a second surface 220 opposite to the first surface 210, and the first surface 210 is mounted on the substrate 100. The heat spreader 300 includes an evaporation side 310, a condensation side 320 and a pressure detection channel 340, the evaporation side 310 is in thermal contact with the second surface 220, and a liquid storage cavity 330 for storing a cooling medium is provided inside the heat spreader 300, and the cooling medium is configured to evaporate when heated on the evaporation side 310 and condense when cooled on the condensation side 320, and the pressure detection channel 340 is provided on the condensation side 320 and communicated with the liquid storage cavity 330, and the pressure in the pressure detection channel 340 is the same as the pressure in the liquid storage cavity 330. The heat sink 400 is connected to the condensation side 320. The pressure detection device includes a pressure detection component 410 and a distance detection sensor 440. The pressure detection component 410 is arranged in the pressure detection channel 340 and can move back and forth along the extension direction of the pressure detection channel 340. The distance detection sensor 440 is arranged toward the pressure detection component 410 and is used to detect the distance from the pressure detection component 410. The pressure detection component 410 is configured as follows: when the internal pressure of the heat spreader 300 increases, the pressure detection component 410 moves outward along the extension direction of the pressure detection channel 340; when the pressure of the heat spreader 300 decreases, the pressure detection component 410 moves inward along the extension direction of the pressure detection channel 340.

[0013] The present application can efficiently transfer heat from the semiconductor chip 200 to the cooling medium and achieve heat dissipation by introducing a heat dissipation design combining a heat spreader 300 and a cooling medium in a power semiconductor package device. In particular, the pressure detection device can monitor the internal pressure changes of the heat spreader 300 in real time, and feedback the pressure state by cooperating with the distance detection sensor 440. When the pressure increases, the pressure detection member 410 moves upward, and the distance detected by the distance detection sensor 440 becomes smaller. When the pressure decreases, the pressure detection member 410 moves downward, and the distance detected by the distance detection sensor 440 becomes larger. The pressure state information can be used to adjust the operating power of the power semiconductor chip 200, thereby ensuring that the heat spreader 300 operates efficiently while avoiding excessive internal pressure, affecting the heat dissipation efficiency, and is conducive to optimizing the working environment of the semiconductor chip 200. Through this intelligent dynamic adjustment mechanism, the present application also enhances the accuracy of power regulation and the reliability of the system, thereby extending the service life of power semiconductor devices.

[0014] In some embodiments, the power semiconductor package device may further include an air cooling unit or a water cooling unit, and the pressure state information fed back by the pressure detection device may also be used to adjust the operating state of the air cooling unit or the water cooling unit. For example, the air cooling unit or the water cooling unit is connected to the radiator 400 for dissipating heat from the radiator 400. The heat dissipation method of the power semiconductor package device includes: obtaining a value fed back by the pressure detection device (i.e., a value detected by the distance sensor), and if the value is greater than a first preset value, starting the air cooling unit or the water cooling unit; if the value is less than the first preset value, shutting down the air cooling unit or the water cooling unit.

[0015] In this embodiment, the pressure detection device also includes an elastic member 430 and a fixing member 420, and the fixing member 420 is arranged outside the pressure detection channel 340. The middle part of the radiator 400 includes an installation area, the pressure detection device is arranged in the installation area, and the fixing member 420 is connected to the radiator 400 to achieve fixation. The pressure detection member 410 is connected to the fixing member 420 through the elastic member 430. The pressure detection device is configured as follows: when the internal pressure of the heat spreader 300 increases, the pressure detection member 410 moves outward along the extension direction of the pressure detection channel 340 and compresses the elastic member 430. When the pressure of the heat spreader 300 decreases, the elastic member 430 pushes the pressure detection member 410 to move inward along the extension direction of the pressure detection channel 340. The present application further enhances the accuracy of pressure detection by introducing the design of the elastic member 430 and the fixing member 420 in the pressure detection device. When the internal pressure of the heat spreader 300 increases, the pressure detection member 410 will move outward along the pressure detection channel 340 and compress the elastic member 430; when the pressure decreases, the elastic member 430 will push the pressure detection member 410 to move inward along the pressure detection channel 340. This structural design enables the pressure detection member 410 to better respond and maintain stable rebound characteristics when the pressure changes, thereby improving the reliability of pressure monitoring. This solution can more accurately detect changes in internal pressure and adjust the power of the chip through feedback, further optimizing the working efficiency of the heat sink 400 and the performance of the power semiconductor packaging device. Specifically, the elastic member 430 can be a spring.

[0016] In some embodiments, the pressure detection device also includes a limit member 450, which is arranged at the maximum stroke of the moving path of the pressure detection member 410. The limit member 450 is configured as follows: when the internal pressure of the heat sink 300 increases, the pressure detection member 410 moves outward along the extension direction of the pressure detection channel 340 to the maximum stroke, and the limit member 450 prevents the pressure detection member 410 from continuing to move outward.

[0017] The stopper 450 is arranged at the maximum stroke of the pressure detection member 410, which can effectively prevent the pressure detection member 410 from continuing to move outward when the pressure inside the heat plate 300 increases, thereby avoiding excessive movement of the pressure detection member 410. This design ensures the mechanical stability and reliability of the pressure detection device, while also preventing system failure or performance degradation due to excessive pressure. The function of the stopper 450 enables the entire pressure detection system to have a higher pressure resistance and a longer service life.

[0018] In some embodiments, the pressure detection device further includes a limit switch 460, which is disposed on the moving path of the pressure detection member 410. The limit switch 460 is configured such that when the internal pressure of the heat spreader 300 increases, the pressure detection member 410 moves outward along the extension direction of the pressure detection channel 340 to the maximum stroke, and the pressure detection member 410 triggers the limit switch 460. Specifically, the limit switch 460 is disposed on the limit member 450. In some embodiments, the limit switch 460 may not be disposed on the limit member 450, but may be disposed at other positions at the same height as the limit member 450 as required.

[0019] The present invention further improves the safety of the system by adding a limit switch 460 to the pressure detection device. As shown in Figure 2, when the internal pressure of the heat sink 300 increases, the pressure detection member 410 will move outward along the pressure detection channel 340 until it reaches the maximum stroke and triggers the limit switch 460. The triggering of the limit switch 460 can provide the system with an additional feedback signal for further adjusting the operating power of the chip to prevent the chip from being damaged due to overload or overheating. This solution enhances the stability and safety of power semiconductor package devices by providing additional protection mechanisms, effectively extending the service life of power semiconductor package devices.

[0020] In some embodiments, the power semiconductor package device further includes an alarm unit, which is connected in series with the limit switch 460. When the limit switch 460 is triggered, the alarm unit is activated. The present invention further improves the safety and real-time monitoring capabilities of the system by adding an alarm unit design to the pressure detection device. When the limit switch 460 is triggered, the alarm unit will be activated immediately and send out an alarm signal to remind the user or system manager that the pressure inside the heat plate 300 has reached a preset maximum value or there is a potential abnormal risk.

[0021] In this embodiment, the distance detection sensor 440 is an infrared distance measurement sensor or a laser distance measurement sensor.

[0022] In this embodiment, the cooling medium includes a water-ethylene glycol mixture or diethyl ether.

[0023] This embodiment further provides a power control method of a power semiconductor package device, which includes the power semiconductor package device as above. The power control method includes: S10, obtaining a detection value of a distance detection sensor.

[0024] S20. When the detected value decreases, the power of the chip is reduced.

[0025] The power control method of the present application obtains the detection value of the distance detection sensor in real time and monitors the changes in the internal pressure of the heat spreader, thereby adjusting the power of the power semiconductor chip. When the detection value decreases, it means that the internal pressure of the heat spreader increases, and the system will automatically reduce the working power of the chip to avoid overheating or equipment damage caused by excessive internal pressure. Through this dynamic adjustment mechanism, the working power of the power semiconductor chip can be optimized under pressure changes to prevent heat dissipation pressure caused by excessive power output.

[0026] Furthermore, the power control method of the power semiconductor package device also includes stopping power supply to the chip when the limit switch is triggered.

[0027] The power control method of the present invention automatically stops supplying power to the chip when the limit switch is triggered, thereby protecting the chip. When the internal pressure of the heat spreader is too high and the limit switch is triggered, the system immediately stops supplying power to prevent the chip from continuing to work in an ultra-high pressure and overheating environment, thereby preventing the chip from being damaged by heat or other safety issues.

[0028] Furthermore, the power control method of the power semiconductor package device also includes an alarm unit sounding an alarm when the limit switch is triggered.

[0029] The present application further adds a design of an alarm unit when the limit switch is triggered, which can promptly issue an alarm when the pressure is too high. When the limit switch is triggered, it means that the internal pressure of the heat spreader has reached or exceeded the safety threshold. The alarm unit will immediately start and sound an alarm, prompting the operator or automatic control system to take further measures. This design greatly enhances the safety and monitorability of the system, so that abnormal situations can be responded to in a timely manner to prevent equipment failure or damage caused by excessive pressure. The addition of an alarm unit can not only provide fault warnings, but also help maintenance personnel or automatic control systems quickly locate problems and take corresponding corrective measures. Through timely alarms, the system can perform preventive interventions before failures occur, further improving the operational reliability and safety of power semiconductor packaging devices.

[0030] Although the specific embodiments of the present application are described above, it should be understood by those skilled in the art that this is only for illustration, and the protection scope of the present application is limited by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present application, but these changes and modifications fall within the protection scope of the present application. In addition, some features, structures or characteristics in one or more embodiments of the present application may be appropriately combined.

Claims

1. A power semiconductor packaging device, characterized in that: It includes: substrate; a semiconductor chip comprising a first surface and a second surface opposite to the first surface, wherein the first surface is mounted on the substrate; A vapor chamber, comprising an evaporation side, a condensation side and a pressure detection channel, wherein the evaporation side is in thermal contact with the second surface, a liquid storage chamber for storing a cooling medium is provided inside the vapor chamber, the cooling medium is configured to evaporate when heated on the evaporation side and condense when cooled on the condensation side, and the pressure detection channel is provided on the condensation side and communicated with the liquid storage chamber; A radiator connected to the condensation side; The pressure detection device includes a pressure detection member and a distance detection sensor. The pressure detection member is arranged in the pressure detection channel and can move back and forth along the extension direction of the pressure detection channel. The distance detection sensor is arranged toward the pressure detection member and is used to detect the distance to the pressure detection member. The pressure detection member is configured as follows: when the internal pressure of the heat spreader increases, the pressure detection member moves outward along the extension direction of the pressure detection channel; when the pressure of the heat spreader decreases, the pressure detection member moves inward along the extension direction of the pressure detection channel.

2. The power semiconductor package device according to claim 1, characterized in that: The pressure detection device also includes an elastic member and a fixing member, wherein the fixing member is arranged on the outside of the pressure detection channel, and the pressure detection member is connected to the fixing member via the elastic member. The pressure detection device is configured as follows: when the internal pressure of the heat spreader increases, the pressure detection member moves outward along the extension direction of the pressure detection channel and compresses the elastic member; when the pressure of the heat spreader decreases, the elastic member pushes the pressure detection member to move inward along the extension direction of the pressure detection channel.

3. The power semiconductor package device according to claim 1 or 2, characterized in that: The pressure detection device also includes a limit switch, which is arranged on the moving path of the pressure detection component. The limit switch is configured such that when the internal pressure of the heat sink increases, the pressure detection component moves outward along the extension direction of the pressure detection channel to a maximum stroke, and the pressure detection component triggers the limit switch.

4. The power semiconductor package device according to claim 1 or 2, characterized in that: The pressure detection device also includes a limit member, which is arranged at the maximum stroke of the moving path of the pressure detection member. The limit member is configured as follows: when the internal pressure of the heat sink increases, when the pressure detection member moves outward along the extension direction of the pressure detection channel to the maximum stroke, the limit member prevents the pressure detection member from continuing to move outward.

5. The power semiconductor package device according to claim 3, characterized in that: It also includes an alarm unit, which is connected in series with the limit switch. When the limit switch is triggered, the alarm unit is activated.

6. The power semiconductor package device according to claim 1, characterized in that: The distance detection sensor is an infrared distance measuring sensor or a laser distance measuring sensor.

7. The power semiconductor package device according to claim 1, characterized in that: The cooling medium includes a water-ethylene glycol mixture or diethyl ether.

8. A power control method for a power semiconductor package device, characterized in that: The power semiconductor package device according to any one of claims 1 to 7, wherein the power control method comprises: Acquiring a detection value of the distance detection sensor; When the detection value decreases, the power of the chip is reduced.

9. The power control method of a power semiconductor package device according to claim 8, characterized in that: The method also includes stopping supplying power to the chip when the limit switch is triggered.

10. The power control method of a power semiconductor package device according to claim 9, characterized in that: The invention also includes an alarm unit that sounds an alarm when the limit switch is triggered.

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