GaN-based semiconductor laser element with far-field image aspect ratio regulation and control layer

Abstract

The invention provides a GaN-based semiconductor laser element with a far-field image aspect ratio regulation and control layer. The GaN-based semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer which are sequentially arranged from bottom to top. The refractive index, In element concentration and forbidden band width of the upper waveguide layer and the lower waveguide layer are set in the GaN-based semiconductor laser element, and the far-field image aspect ratio regulation and control layer is arranged in the GaN-based semiconductor laser element, so that quasi Fermi level pinning of electrons and holes is regulated and controlled, photons are enhanced, stimulated radiation is accelerated to be greater than spontaneous radiation, and the laser efficiency is improved. The discontinuity or abrupt change phenomenon of symmetry breaking of a laser balance state at a threshold value is inhibited, the problems of ideal factor upward jumping and series resistor sinking are reduced, the limiting effect of a longitudinal light field is enhanced, the longitudinal divergence angle of a main light spot is increased, a far-field light spot is made to be oval, and a light beam quality factor is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a GaN-based semiconductor laser element with a far-field image aspect ratio control layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: the symmetry breaking corresponding to the phase transition of the laser away from the equilibrium state causes discontinuity or mutation at the threshold of the laser, such as conductivity jump, capacitance sink, junction voltage jump, series resistance sink, ideal factor jump, etc. This discontinuity phenomenon is mainly affected by the capture effect of the depletion region, surface conditions, edge effects, deep energy level traps, insulating interface layers and series resistance. When electrons leak into the p-type semiconductor, a bipolar conductivity effect is formed. When the carrier concentration of the active layer is saturated, the junction voltage at the threshold is saturated, but the series resistance increases and the total voltage of the laser rises. Summary of the invention

[0009] In order to solve one of the above technical problems, the present invention provides a GaN-based semiconductor laser element with a far-field image aspect ratio control layer.

[0010] An embodiment of the present invention provides a GaN-based semiconductor laser element with a far-field image aspect ratio control layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer arranged in sequence from bottom to top, wherein the upper waveguide layer comprises a first upper waveguide layer and a second upper waveguide layer, wherein the first upper waveguide layer is located below the second upper waveguide layer, wherein the refractive index of the first upper waveguide layer is ≥ the refractive index of the second upper waveguide layer, the In element concentration of the first upper waveguide layer is ≥ the In element concentration of the second upper waveguide layer, the bandgap width of the first upper waveguide layer is ≤ the bandgap width of the second upper waveguide layer, and the lower waveguide layer comprises a first lower waveguide layer and a second lower waveguide layer, wherein the first lower waveguide layer is located below the second lower waveguide layer, the refractive index of the first lower waveguide layer is ≤ the refractive index of the second lower waveguide layer, the In element concentration of the first lower waveguide layer is ≤ the In element concentration of the second lower waveguide layer, the bandgap width of the first lower waveguide layer is ≥ the bandgap width of the second lower waveguide layer, a first far-field image aspect ratio regulating layer is arranged between the first lower waveguide layer and the second lower waveguide layer, a second far-field image aspect ratio regulating layer is arranged between the first upper waveguide layer and the second upper waveguide layer, and a third far-field image aspect ratio regulating layer is arranged between the second upper waveguide layer and the electron blocking layer.

[0011] Preferably, the first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have In element concentration distribution characteristics, the descending angle of the peak position of the In element concentration of the first far-field image aspect ratio control layer toward the lower limiting layer is 45° to 90°, the descending angle of the peak position of the In element concentration of the second far-field image aspect ratio control layer toward the upper limiting layer is 45° to 90°, the descending angle of the peak position of the In element concentration of the third far-field image aspect ratio control layer toward the upper limiting layer is 20° to 70°, and the descending angle of the peak position of the In element concentration of the third far-field image aspect ratio control layer toward the upper limiting layer is ≤ the descending angle of the peak position of the In element concentration of the first far-field image aspect ratio control layer toward the lower limiting layer ≤ the descending angle of the peak position of the In element concentration of the second far-field image aspect ratio control layer toward the upper limiting layer, and the angle is the tangent inclination angle along the curve.

[0012] Preferably, the first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have refractive index distribution characteristics, and the angle of decrease of the peak position of the refractive index of the first far-field image aspect ratio control layer toward the lower limiting layer is α: 45°≤α≤90°, the angle of decrease of the peak position of the refractive index of the second far-field image aspect ratio control layer toward the upper limiting layer is β: 45°≤β≤90°, and the angle of decrease of the peak position of the refractive index of the third far-field image aspect ratio control layer toward the upper limiting layer is γ: 20°≤γ≤70°, and γ≤α≤β.

[0013] Preferably, the first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have deformation potential distribution characteristics, and the rising angle of the valley position of the deformation potential of the first far-field image aspect ratio control layer in the direction of the downward restriction layer is θ: 45°≤θ≤90°, and the rising angle of the valley position of the deformation potential of the second far-field image aspect ratio control layer in the direction of the upward restriction layer is The rising angle of the valley position of the deformation potential of the third far-field image aspect ratio regulating layer toward the upper limiting layer is ω: 20°≤ω≤70°, and

[0014] Preferably, the first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have longitudinal sound velocity distribution characteristics, and the rising angle of the valley position of the longitudinal sound velocity of the first far-field image aspect ratio control layer towards the downward limiting layer is δ: 45°≤δ≤90°, the rising angle of the valley position of the longitudinal sound velocity of the second far-field image aspect ratio control layer towards the upward limiting layer is ψ: 45°≤ψ≤90°, and the rising angle of the valley position of the longitudinal sound velocity of the third far-field image aspect ratio control layer towards the upward limiting layer is ε: 20°≤ε≤70°, and ε≤δ≤ψ.

[0015] Preferably, the first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have polarization optical phonon energy distribution characteristics, the rising angle of the valley position of the polarization optical phonon energy of the first far-field image aspect ratio control layer toward the lower limiting layer is σ: 45°≤σ≤90°, the rising angle of the valley position of the polarization optical phonon energy of the second far-field image aspect ratio control layer toward the upper limiting layer is μ: 45°≤μ≤90°, the rising angle of the valley position of the polarization optical phonon energy of the third far-field image aspect ratio control layer toward the upper limiting layer is ρ: 20°≤ρ≤70°, and ρ≤σ≤μ.

[0016] Preferably, the relationship among the descending angle α of the peak position of the refractive index of the first far-field image aspect ratio regulating layer toward the lower limiting layer, the rising angle θ of the valley position of the deformation potential of the first far-field image aspect ratio regulating layer toward the lower limiting layer, the rising angle δ of the valley position of the longitudinal sound velocity of the first far-field image aspect ratio regulating layer toward the lower limiting layer, and the rising angle σ of the valley position of the polarized optical phonon energy of the first far-field image aspect ratio regulating layer toward the lower limiting layer is: 45°≤σ≤δ≤θ≤α≤90°;

[0017] The descending angle β of the refractive index peak position of the second far-field image aspect ratio regulating layer toward the upper limiting layer, and the rising angle of the valley position of the deformation potential of the second far-field image aspect ratio regulating layer toward the upper limiting layer The relationship between the rising angle ψ of the valley position of the longitudinal sound velocity of the second far-field image aspect ratio control layer toward the upper limiting layer and the rising angle μ of the valley position of the polarized optical phonon energy of the second far-field image aspect ratio control layer toward the upper limiting layer is:

[0018] The relationship between the descending angle γ of the refractive index peak position of the third far-field image aspect ratio control layer toward the upper limiting layer, the rising angle ω of the valley position of the deformation potential of the third far-field image aspect ratio control layer toward the upper limiting layer, the rising angle ε of the valley position of the longitudinal sound velocity of the third far-field image aspect ratio control layer toward the upper limiting layer, and the rising angle ρ of the valley position of the polarization-optical phonon energy of the third far-field image aspect ratio control layer toward the upper limiting layer is: 20°≤ρ≤ε≤ω≤γ≤70°.

[0019] Preferably, the first far-field image aspect ratio regulating layer, the second far-field image aspect ratio regulating layer and the third far-field image aspect ratio regulating layer all have refractive index distribution characteristics, piezoelectric polarization coefficient distribution characteristics, valence band effective state density distribution characteristics and hole mobility distribution characteristics;

[0020] The refractive index of the first far-field image aspect ratio regulating layer has a function y1=A*x1 / lnx1+B curve distribution, and the refractive index of the second far-field image aspect ratio regulating layer has a function y2=C+D*lnx2+e x2 Curve distribution, the refractive index of the third far-field image aspect ratio regulating layer has a function y3=E+log a x3 curve distribution, a>1;

[0021] The piezoelectric polarization coefficient of the first far-field image aspect ratio control layer has a function y4=F*x1 / lnx1+G curve distribution, and the piezoelectric polarization coefficient of the second far-field image aspect ratio control layer has a function y5=H+J*lnx2+e x2 Curve distribution, the piezoelectric polarization coefficient of the third far-field image aspect ratio control layer has a function y6=W+log b x3 curve distribution, b>1;

[0022] The valence band effective state density of the first far-field image aspect ratio control layer has a function y7=K*x1 / lnx1+L curve distribution, and the valence band effective state density of the second far-field image aspect ratio control layer has a function y8=M+N*lnx2+e x2 Curve distribution, the valence band effective state density of the third far-field image aspect ratio control layer has a function y9=P+log c x3 curve distribution, c>1;

[0023] The hole mobility of the first far-field image aspect ratio regulating layer has a function y 10 =Q*x1 / lnx1+R curve distribution, the hole mobility of the second far-field image aspect ratio control layer has a function y 11 =S+T*lnx2+e x2 Curve distribution, the hole mobility of the third far-field image aspect ratio control layer has a function y12 =U+log d x3 curve distribution, d>1;

[0024] Among them, x1 is the depth of the first far-field image aspect ratio control layer towards the second lower waveguide layer, x2 is the depth of the second far-field image aspect ratio control layer towards the second upper waveguide layer, x3 is the depth of the third far-field image aspect ratio control layer towards the electron blocking layer, G≤B≤R≤L, H≤C≤S≤M, W≤E≤U≤P.

[0025] Preferably, the first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN.

[0026] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond combination, with a thickness of 10 angstroms to 150 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms.

[0027] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN and diamond.

[0028] Preferably, the substrate is a single crystal substrate, such as sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0029] The beneficial effects of the present invention are as follows: the present invention sets the refractive index, In element concentration and bandgap width of the upper waveguide layer and the lower waveguide layer in the GaN-based semiconductor laser element, and sets a far-field image aspect ratio control layer in the GaN-based semiconductor laser element, controls the quasi-Fermi level pinning of electrons and holes, enhances photons, accelerates stimulated radiation to be greater than spontaneous radiation, suppresses the symmetry breaking of the laser equilibrium state to cause discontinuity or mutation at the threshold, reduces the problem of ideal factor jump and series resistance sinking, enhances the limiting effect of the longitudinal light field, increases the longitudinal divergence angle of the main light spot, makes the far-field light spot elliptical, and improves the beam quality factor. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0031] Figure 1 A schematic structural diagram of a GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to an embodiment of the present invention;

[0032] Figure 2A SIMS secondary ion mass spectrum of a GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to an embodiment of the present invention;

[0033] Figure 3 This is a locally enlarged SIMS secondary ion mass spectrum of the GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to an embodiment of the present invention.

[0034] Reference numerals:

[0035] 100, substrate, 101, lower confinement layer, 102, lower waveguide layer, 103, active layer, 104, upper waveguide layer, 105, electron blocking layer, 106, upper confinement layer, 107, far-field image aspect ratio control layer;

[0036] 102a, a first lower waveguide layer, 102b, a second lower waveguide layer, 104a, a first upper waveguide layer, 104b, a second upper waveguide layer, 107a, a first far-field image aspect ratio control layer, 107b, a second far-field image aspect ratio control layer, 107c, a third far-field image aspect ratio control layer. DETAILED DESCRIPTION

[0037] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0038] like Figures 1 to 3 As shown, this embodiment provides a GaN-based semiconductor laser element with a far-field image aspect ratio control layer, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 arranged in sequence from bottom to top. A far-field image aspect ratio control layer 107 is also arranged in the GaN-based semiconductor laser element with a far-field image aspect ratio control layer.

[0039] Specifically, in this embodiment, the GaN-based semiconductor laser element with a far-field image aspect ratio control layer is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105 and an upper confinement layer 106 from bottom to top. Among them, the upper waveguide layer 104 and the lower waveguide layer 102 are both double-layer structures. The upper waveguide layer 104 includes a first upper waveguide layer 104a and a second upper waveguide layer 104b, and the first upper waveguide layer 104a is located below the second upper waveguide layer 104b. The lower waveguide layer 102 includes a first lower waveguide layer 102a and a second lower waveguide layer 102b, and the first lower waveguide layer 102a is located below the second lower waveguide layer 102b. A first far-field image aspect ratio control layer 107a is provided between the first lower waveguide layer 102a and the second lower waveguide layer 102b. A second far-field image aspect ratio control layer 107b is disposed between the first upper waveguide layer 104a and the second upper waveguide layer 104b. A third far-field image aspect ratio control layer 107c is disposed between the second upper waveguide layer 104b and the electron blocking layer 105. The first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c constitute the far-field image aspect ratio control layer 107.

[0040] In this embodiment, the first upper waveguide layer 104a and the second upper waveguide layer 104b, as well as the first lower waveguide layer 102a and the second lower waveguide layer 102b, have refractive index, In element concentration, and bandgap width characteristics, and have a certain size relationship with each other, which is specifically manifested as follows:

[0041] The refractive index of the first upper waveguide layer 104 a is greater than or equal to the refractive index of the second upper waveguide layer 104 b ;

[0042] The In element concentration of the first upper waveguide layer 104 a is ≥ the In element concentration of the second upper waveguide layer 104 b ;

[0043] The bandgap width of the first upper waveguide layer 104 a is less than or equal to the bandgap width of the second upper waveguide layer 104 b ;

[0044] The refractive index of the first lower waveguide layer 102a is less than or equal to the refractive index of the second lower waveguide layer 102b;

[0045] The In element concentration of the first lower waveguide layer 102 a is less than or equal to the In element concentration of the second lower waveguide layer 102 b ;

[0046] The bandgap width of the first lower waveguide layer 102 a is ≥ the bandgap width of the second lower waveguide layer 102 b .

[0047] In this embodiment, the refractive index, In element concentration and bandgap width of the upper waveguide layer 104 and the lower waveguide layer 102 are set in the GaN-based semiconductor laser element, and a far-field image aspect ratio control layer 107 is provided in the GaN-based semiconductor laser element to control the quasi-Fermi level pinning of electrons and holes, enhance photons, accelerate stimulated radiation to be greater than spontaneous radiation, suppress the symmetry breaking of the laser equilibrium state to cause discontinuity or mutation at the threshold, reduce the problem of ideal factor jump and series resistance sinking, enhance the limiting effect of the longitudinal light field, increase the longitudinal divergence angle of the main light spot, make the far-field light spot elliptical, and improve the beam quality factor.

[0048] In some optional embodiments, the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c all have In element concentration distribution characteristics, and the In element concentrations in the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c also have a certain variation trend, which is specifically manifested as follows:

[0049] The peak position of the In element concentration of the first far-field image aspect ratio control layer 107a shows a steep downward trend toward the lower limiting layer 101;

[0050] The peak position of the In element concentration of the second far-field image aspect ratio control layer 107b shows a steep downward trend toward the upper confinement layer 106;

[0051] The peak position of the In element concentration of the third far-field image aspect ratio control layer 107c shows a steep downward trend toward the upper confinement layer 106;

[0052] Moreover, the descending angle of the peak position of the In element concentration of the third far-field image aspect ratio control layer 107c toward the upper restriction layer 106 is ≤ the descending angle of the peak position of the In element concentration of the first far-field image aspect ratio control layer 107a toward the lower restriction layer 101 is ≤ the descending angle of the peak position of the In element concentration of the second far-field image aspect ratio control layer 107b toward the upper restriction layer 106, wherein the angle is the inclination angle of the tangent along the curve.

[0053] Specifically, the descending angle of the peak position of the In element concentration of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101 is 45° to 90°, the descending angle of the peak position of the In element concentration of the second far-field image aspect ratio control layer 107b toward the upward limiting layer 106 is 45° to 90°, and the descending angle of the peak position of the In element concentration of the third far-field image aspect ratio control layer 107c toward the upward limiting layer 106 is 20° to 70°.

[0054] In some optional embodiments, the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c all have a refractive index distribution characteristic, and the refractive index in the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c also has a certain change trend, which is specifically manifested as follows:

[0055] The peak position of the refractive index of the first far-field image aspect ratio regulating layer 107a shows a steep downward trend toward the lower limiting layer 101;

[0056] The refractive index peak position of the second far-field image aspect ratio regulating layer 107b shows a steep downward trend toward the upper limiting layer 106;

[0057] The refractive index peak position of the third far-field image aspect ratio regulating layer 107 c shows a steep downward trend toward the upper confinement layer 106 .

[0058] Specifically, the descending angle of the peak position of the refractive index of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101 is α: 45°≤α≤90°, the descending angle of the peak position of the refractive index of the second far-field image aspect ratio control layer 107b toward the upward limiting layer 106 is β: 45°≤β≤90°, and the descending angle of the peak position of the refractive index of the third far-field image aspect ratio control layer 107c toward the upward limiting layer 106 is γ: 20°≤γ≤70°, and γ≤α≤β.

[0059] In this embodiment, by setting the changing trends of the In element concentration distribution and the refractive index distribution in the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c, a larger steep refractive index gradient and a steep In element concentration gradient are formed on the laser exit surface of the laser, thereby increasing the effective refractive index difference of the laser, improving the horizontal expansion angle, suppressing light field leakage, and achieving low aspect ratio far-field image quality and high kink level.

[0060] In some optional embodiments, the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c all have deformation potential distribution characteristics, and the deformation potential in the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c also has a certain change trend, which is specifically manifested as follows:

[0061] The valley position of the deformation potential of the first far-field image aspect ratio regulating layer 107a shows a steep upward trend toward the lower limiting layer 101;

[0062] The valley position of the deformation potential of the second far-field image aspect ratio regulating layer 107b presents a steep upward trend toward the upper limiting layer 106;

[0063] The valley position of the deformation potential of the third far-field image aspect ratio regulating layer 107 c presents a steep upward trend toward the upper limiting layer 106 .

[0064] Specifically, the rising angle of the valley position of the deformation potential of the first far-field image aspect ratio regulating layer 107a toward the lower limiting layer 101 is θ: 45°≤θ≤90°, and the rising angle of the valley position of the deformation potential of the second far-field image aspect ratio regulating layer 107b toward the upper limiting layer 106 is The rising angle of the valley position of the deformation potential of the third far-field image aspect ratio regulating layer 107c toward the upper limiting layer 106 is ω: 20°≤ω≤70°, and

[0065] In this embodiment, by designing the changing trend of the deformation potential distribution of the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c, the deformation of the active layer 103 and the waveguide layer is controlled, and the stress-induced laser coherence is controlled, so that the light beam is closer to the Gaussian distribution, thereby improving the aspect ratio and beam quality factor of the far-field image.

[0066] In some optional embodiments, the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c all have longitudinal sound velocity distribution characteristics, and the longitudinal sound velocity in the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c also has a certain change trend, which is specifically manifested as follows:

[0067] The valley position of the longitudinal sound velocity of the first far-field image aspect ratio regulating layer 107a shows a steep upward trend toward the lower limiting layer 101;

[0068] The valley position of the longitudinal sound velocity of the second far-field image aspect ratio regulating layer 107b presents a steep upward trend toward the upper limiting layer 106;

[0069] The valley position of the longitudinal sound velocity of the third far-field image aspect ratio regulating layer 107 c presents a steep upward trend toward the upper limiting layer 106 .

[0070] Specifically, the rising angle of the valley position of the longitudinal sound velocity of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101 is δ: 45°≤δ≤90°, the rising angle of the valley position of the longitudinal sound velocity of the second far-field image aspect ratio control layer 107b toward the upward limiting layer 106 is ψ: 45°≤ψ≤90°, and the rising angle of the valley position of the longitudinal sound velocity of the third far-field image aspect ratio control layer 107c toward the upward limiting layer 106 is ε: 20°≤ε≤70°, and ε≤δ≤ψ.

[0071] In some optional embodiments, the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c all have polarized optical phonon energy distribution characteristics, and the polarized optical phonon energy in the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b, and the third far-field image aspect ratio control layer 107c also has a certain change trend, which is specifically manifested as follows:

[0072] The valley position of the polarized optical phonon energy of the first far-field image aspect ratio regulating layer 107a shows a steep upward trend toward the lower confinement layer 101;

[0073] The valley position of the polarized optical phonon energy of the second far-field image aspect ratio regulating layer 107b shows a steep upward trend toward the upper confinement layer 106;

[0074] The valley position of the polari-optical phonon energy of the third far-field image aspect ratio regulating layer 107 c shows a steep upward trend toward the upper confinement layer 106 .

[0075] Specifically, the rising angle of the valley position of the polarization optical phonon energy of the first far-field image aspect ratio control layer 107a toward the downward restriction layer 101 is σ: 45°≤σ≤90°, the rising angle of the valley position of the polarization optical phonon energy of the second far-field image aspect ratio control layer 107b toward the upward restriction layer 106 is μ: 45°≤μ≤90°, and the rising angle of the valley position of the polarization optical phonon energy of the third far-field image aspect ratio control layer 107c toward the upward restriction layer 106 is ρ: 20°≤ρ≤70°, and ρ≤σ≤μ.

[0076] This embodiment reduces the heat generation of the laser emission end face, enhances the phonon-assisted carrier transition of the interaction between electrons and phonons, enhances laser stimulated radiation, improves the coupling rate from the pump energy level to the laser energy level, reduces the stress birefringence effect caused by heat loss, improves the aspect ratio and depolarization phenomenon of the laser, improves the far-field image quality of the laser, and reduces the temperature quenching ratio of the laser by setting the longitudinal sound velocity distribution and the change trend of the polarization optical phonon energy distribution of the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c.

[0077] Furthermore, the relationship among the descending angle α of the peak position of the refractive index of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101, the rising angle θ of the valley position of the deformation potential of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101, the rising angle δ of the valley position of the longitudinal sound velocity of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101, and the rising angle σ of the valley position of the polarization-optical phonon energy of the first far-field image aspect ratio control layer 107a toward the downward limiting layer 101 is: 45°≤σ≤δ≤θ≤α≤90°.

[0078] The descending angle β of the refractive index peak position of the second far-field image aspect ratio regulating layer 107b toward the upper limiting layer 106, the rising angle β of the valley position of the deformation potential of the second far-field image aspect ratio regulating layer 107b toward the upper limiting layer 106 The relationship between the rising angle ψ of the valley position of the longitudinal sound velocity of the second far-field image aspect ratio regulating layer 107b toward the upper limiting layer 106 and the rising angle μ of the valley position of the polarized optical phonon energy of the second far-field image aspect ratio regulating layer 107b toward the upper limiting layer 106 is:

[0079] The relationship between the descending angle γ of the refractive index peak position of the third far-field image aspect ratio control layer 107c toward the upper limiting layer 106, the rising angle ω of the valley position of the deformation potential of the third far-field image aspect ratio control layer 107c toward the upper limiting layer 106, the rising angle ε of the valley position of the longitudinal sound velocity of the third far-field image aspect ratio control layer 107c toward the upper limiting layer 106, and the rising angle ρ of the valley position of the polarization-optical phonon energy of the third far-field image aspect ratio control layer 107c toward the upper limiting layer 106 is: 20°≤ρ≤ε≤ω≤γ≤70°.

[0080] In some optional embodiments, the first far-field image aspect ratio regulating layer 107a, the second far-field image aspect ratio regulating layer 107b and the third far-field image aspect ratio regulating layer 107c all have refractive index distribution characteristics, piezoelectric polarization coefficient distribution characteristics, valence band effective state density distribution characteristics and hole mobility distribution characteristics, which are specifically manifested as follows:

[0081] (1) Refractive index distribution

[0082] The refractive index of the first far-field image aspect ratio regulating layer 107a has a function y1=A*x1 / lnx1+B curve distribution;

[0083] The refractive index of the second far-field image aspect ratio control layer 107b has the function y2=C+D*lnx2+e x2 Curve distribution,

[0084] The refractive index of the third far-field image aspect ratio regulating layer 107c has a function y3=E+log a x3 curve distribution, a>1;

[0085] (2) Piezoelectric polarization coefficient distribution

[0086] The piezoelectric polarization coefficient of the first far-field image aspect ratio control layer 107a has a function y4=F*x1 / lnx1+G curve distribution;

[0087] The piezoelectric polarization coefficient of the second far-field image aspect ratio control layer 107b has the function y5=H+J*lnx2+e x2 Curve distribution;

[0088] The piezoelectric polarization coefficient of the third far-field image aspect ratio control layer 107c has the function y6=W+log b x3 curve distribution, b>1;

[0089] (3) Valence band effective state density distribution

[0090] The valence band effective state density of the first far-field image aspect ratio control layer 107a has a curve distribution of function y7=K*x1 / lnx1+L;

[0091] The valence band effective state density of the second far-field image aspect ratio control layer 107b has a function y8=M+N*lnx2+e x2 Curve distribution;

[0092] The valence band effective state density of the third far-field image aspect ratio control layer 107c has a function y9=P+log c x3 curve distribution, c>1;

[0093] (4) Hole mobility distribution

[0094] The hole mobility of the first far-field image aspect ratio control layer 107a has a function y 10 =Q*x1 / lnx1+R curve distribution;

[0095] The hole mobility of the second far-field image aspect ratio control layer 107b has a function y 11 =S+T*lnx2+e x2 Curve distribution;

[0096] The hole mobility of the third far-field image aspect ratio control layer 107c has a function y 12 =U+log d x3 curve distribution, d>1;

[0097] Among them, x1 is the depth of the first far-field image aspect ratio control layer 107a towards the second lower waveguide layer 102b, x2 is the depth of the second far-field image aspect ratio control layer 107b towards the second upper waveguide layer 104b, x3 is the depth of the third far-field image aspect ratio control layer 107c towards the electron blocking layer 105, G≤B≤R≤L, H≤C≤S≤M, W≤E≤U≤P.

[0098] This embodiment reduces the internal loss related to free carriers, suppresses the overlap with the heavily doped layer to reduce the internal light loss, regulates the distribution and expansion of carriers, increases the output area of ​​the near-field light beam, reduces the optical power density of the end face, reduces the cavity surface load, improves the output light power and reduces the proportion of long-term aging dead lamps by designing the refractive index distribution, piezoelectric polarization coefficient distribution, valence band effective state density distribution and hole mobility distribution of the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c.

[0099] In some optional embodiments, the first far-field image aspect ratio control layer 107a, the second far-field image aspect ratio control layer 107b and the third far-field image aspect ratio control layer 107c are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN.

[0100] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and m can be 1, 2, or 3.

[0101] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 150 angstroms.

[0102] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0103] Preferably, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0104] Preferably, the substrate 100 is a single crystal substrate, such as sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0105] The following table is a parameter comparison between a conventional semiconductor laser and the GaN-based semiconductor laser element with a far-field image aspect ratio control layer proposed in this embodiment, including the long-term aging dead lamp rate, beam quality factor, temperature quenching ratio, internal optical loss, and optical power showing the difference between the conventional semiconductor laser and the GaN-based semiconductor laser element with a far-field image aspect ratio control layer proposed in this embodiment:

[0106]

[0107] It can be seen that the GaN-based semiconductor laser element with a far-field image aspect ratio control layer proposed in this embodiment improves the beam quality factor, internal optical loss and optical power compared with traditional semiconductor lasers, reduces the long-term aging dead lamp rate and temperature quenching ratio, and has obvious advantages over traditional semiconductor lasers.

[0108] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A GaN-based semiconductor laser element with a far-field image aspect ratio control layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: The upper waveguide layer includes a first upper waveguide layer and a second upper waveguide layer, the first upper waveguide layer is located below the second upper waveguide layer, the refractive index of the first upper waveguide layer is ≥ the refractive index of the second upper waveguide layer, the In element concentration of the first upper waveguide layer is ≥ the In element concentration of the second upper waveguide layer, and the bandgap width of the first upper waveguide layer is ≤ the bandgap width of the second upper waveguide layer; the lower waveguide layer includes a first lower waveguide layer and a second lower waveguide layer, the first lower waveguide layer is located below the second lower waveguide layer, the refractive index of the first lower waveguide layer is ≤ the refractive index of the second lower waveguide layer, the In element concentration of the first lower waveguide layer is ≤ the In element concentration of the second lower waveguide layer, and the bandgap width of the first lower waveguide layer is ≥ the bandgap width of the second lower waveguide layer, a first far-field image aspect ratio regulating layer is arranged between the first lower waveguide layer and the second lower waveguide layer, a second far-field image aspect ratio regulating layer is arranged between the first upper waveguide layer and the second upper waveguide layer, and a third far-field image aspect ratio regulating layer is arranged between the second upper waveguide layer and the electron blocking layer.

2. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 1, characterized in that: The first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have In element concentration distribution characteristics, the descending angle of the peak position of the In element concentration of the first far-field image aspect ratio control layer toward the lower limiting layer is 45° to 90°, the descending angle of the peak position of the In element concentration of the second far-field image aspect ratio control layer toward the upper limiting layer is 45° to 90°, the descending angle of the peak position of the In element concentration of the third far-field image aspect ratio control layer toward the upper limiting layer is 20° to 70°, and the descending angle of the peak position of the In element concentration of the third far-field image aspect ratio control layer toward the upper limiting layer is ≤ the descending angle of the peak position of the In element concentration of the first far-field image aspect ratio control layer toward the lower limiting layer ≤ the descending angle of the peak position of the In element concentration of the second far-field image aspect ratio control layer toward the upper limiting layer, and the angle is the tangent inclination angle along the curve.

3. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 1, characterized in that: The first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have refractive index distribution characteristics. The descending angle of the peak position of the refractive index of the first far-field image aspect ratio control layer toward the lower limiting layer is α: 45°≤α≤90°, the descending angle of the peak position of the refractive index of the second far-field image aspect ratio control layer toward the upper limiting layer is β: 45°≤β≤90°, and the descending angle of the peak position of the refractive index of the third far-field image aspect ratio control layer toward the upper limiting layer is γ: 20°≤γ≤70°, and γ≤α≤β.

4. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 3, characterized in that: The first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have deformation potential distribution characteristics. The rising angle of the valley position of the deformation potential of the first far-field image aspect ratio control layer in the direction of the downward restriction layer is θ: 45°≤θ≤90°, and the rising angle of the valley position of the deformation potential of the second far-field image aspect ratio control layer in the direction of the upward restriction layer is The rising angle of the valley position of the deformation potential of the third far-field image aspect ratio regulating layer toward the upper limiting layer is ω: 20°≤ω≤70°, and 5. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 4, characterized in that: The first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have longitudinal sound velocity distribution characteristics. The rising angle of the valley position of the longitudinal sound velocity of the first far-field image aspect ratio control layer toward the downward limiting layer is δ: 45°≤δ≤90°, the rising angle of the valley position of the longitudinal sound velocity of the second far-field image aspect ratio control layer toward the upward limiting layer is ψ: 45°≤ψ≤90°, and the rising angle of the valley position of the longitudinal sound velocity of the third far-field image aspect ratio control layer toward the upward limiting layer is ε: 20°≤ε≤70°, and ε≤δ≤ψ.

6. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 5, characterized in that: The first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer all have polarization optical phonon energy distribution characteristics. The rising angle of the valley position of the polarization optical phonon energy of the first far-field image aspect ratio control layer toward the lower limiting layer is σ: 45°≤σ≤90°, the rising angle of the valley position of the polarization optical phonon energy of the second far-field image aspect ratio control layer toward the upper limiting layer is μ: 45°≤μ≤90°, and the rising angle of the valley position of the polarization optical phonon energy of the third far-field image aspect ratio control layer toward the upper limiting layer is ρ: 20°≤ρ≤70°, and ρ≤σ≤μ.

7. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 6, characterized in that: The relationship between the descending angle α of the peak position of the refractive index of the first far-field image aspect ratio regulating layer toward the lower limiting layer, the rising angle θ of the valley position of the deformation potential of the first far-field image aspect ratio regulating layer toward the lower limiting layer, the rising angle δ of the valley position of the longitudinal sound velocity of the first far-field image aspect ratio regulating layer toward the lower limiting layer, and the rising angle σ of the valley position of the polarized optical phonon energy of the first far-field image aspect ratio regulating layer toward the lower limiting layer is: 45°≤σ≤δ≤θ≤α≤90°; The descending angle β of the refractive index peak position of the second far-field image aspect ratio regulating layer toward the upper limiting layer, and the rising angle of the valley position of the deformation potential of the second far-field image aspect ratio regulating layer toward the upper limiting layer The relationship between the rising angle ψ of the valley position of the longitudinal sound velocity of the second far-field image aspect ratio control layer toward the upper limiting layer and the rising angle μ of the valley position of the polarized optical phonon energy of the second far-field image aspect ratio control layer toward the upper limiting layer is: The relationship between the descending angle γ of the refractive index peak position of the third far-field image aspect ratio control layer toward the upper limiting layer, the rising angle ω of the valley position of the deformation potential of the third far-field image aspect ratio control layer toward the upper limiting layer, the rising angle ε of the valley position of the longitudinal sound velocity of the third far-field image aspect ratio control layer toward the upper limiting layer, and the rising angle ρ of the valley position of the polarization-optical phonon energy of the third far-field image aspect ratio control layer toward the upper limiting layer is: 20°≤ρ≤ε≤ω≤γ≤70°.

8. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 1, characterized in that: The first far-field image aspect ratio regulating layer, the second far-field image aspect ratio regulating layer and the third far-field image aspect ratio regulating layer all have refractive index distribution characteristics, piezoelectric polarization coefficient distribution characteristics, valence band effective state density distribution characteristics and hole mobility distribution characteristics; The refractive index of the first far-field image aspect ratio regulating layer has a function y1=A*x1 / lnx1+B curve distribution, and the refractive index of the second far-field image aspect ratio regulating layer has a function y2=C+D*lnx2+e x2 Curve distribution, the refractive index of the third far-field image aspect ratio regulating layer has a function y3=E+log a x3 curve distribution, a>1; The piezoelectric polarization coefficient of the first far-field image aspect ratio control layer has a function y4=F*x1 / lnx1+G curve distribution, and the piezoelectric polarization coefficient of the second far-field image aspect ratio control layer has a function y5=H+J*lnx2+e x2 Curve distribution, the piezoelectric polarization coefficient of the third far-field image aspect ratio control layer has a function y6=W+log b x3 curve distribution, b>1; The valence band effective state density of the first far-field image aspect ratio control layer has a function y7=K*x1 / lnx1+L curve distribution, and the valence band effective state density of the second far-field image aspect ratio control layer has a function y8=M+N*lnx2+e x2 Curve distribution, the valence band effective state density of the third far-field image aspect ratio control layer has a function y9=P+log c x3 curve distribution, c>1; The hole mobility of the first far-field image aspect ratio regulating layer has a function y 10 =Q*x1 / lnx1+R curve distribution, the hole mobility of the second far-field image aspect ratio control layer has a function y 11 =S+T*lnx2+e x2 Curve distribution, the hole mobility of the third far-field image aspect ratio control layer has a function y 12 =U+log d x3 curve distribution, d>1; Among them, x1 is the depth of the first far-field image aspect ratio control layer towards the second lower waveguide layer, x2 is the depth of the second far-field image aspect ratio control layer towards the second upper waveguide layer, x3 is the depth of the third far-field image aspect ratio control layer towards the electron blocking layer, G≤B≤R≤L, H≤C≤S≤M, W≤E≤U≤P.

9. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 1, characterized in that: The first far-field image aspect ratio control layer, the second far-field image aspect ratio control layer and the third far-field image aspect ratio control layer are any one or any combination of InGaN, InN, AlInGaN, GaN, AlGaN, InGaN / GaN superlattice, InGaN / AlInN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInN superlattice, GaN / AlGaN superlattice, InGaN / InGaN superlattice, AlInGaN / AlInGaN superlattice or any combination with GaN.

10. The GaN-based semiconductor laser element with a far-field image aspect ratio control layer according to claim 1, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond , with a thickness of 10 angstroms to 150 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The substrate is a single crystal substrate, such as sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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