Plasma reaction device, semiconductor component and processing method thereof

Abstract

The invention discloses a plasma reaction device, a semiconductor part and a processing method thereof, and the processing method comprises the steps: providing a part, the surface of which comprises a polycrystalline structure; performing an ion implantation process on the polycrystalline structure; the method comprises the following steps: carrying out ion implantation on a polycrystalline structure, then carrying out microwave crystallization treatment to convert the polycrystalline structure into a single-crystal-like structure, carrying out X-ray diffraction on a part of the single-crystal-like structure to obtain a diffraction peak pattern, and carrying out the X-ray diffraction on the part to obtain a main peak and a plurality of secondary peaks, the intensity of each secondary peak being at least 1 / 25 lower than the intensity of the main peak. According to the method, the corrosion resistance of the part can be improved, and particulate pollutants are reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a plasma reaction device, a semiconductor component and a processing method thereof. Background Art

[0002] Plasma etching technology plays a key role in the field of integrated circuit manufacturing. With the continuous improvement of aspect ratio in plasma etching process, the plasma corrosion environment of the components in the etching chamber is becoming more and more severe. The corrosion-resistant coatings in the existing technology gradually show ineffective micro-particle contamination in these process steps and cannot meet the process requirements.

[0003] Research has found that one of the reasons for the failure of the above-mentioned coatings is that conventional corrosion-resistant coatings have a polycrystalline structure. Under the physical bombardment and chemical corrosion of increasingly strong plasma, the oriented grains with low atomic density on the surface of the coating will be preferentially fluorinated, and the volume of the grains will expand. After exceeding a certain threshold, they will fall off from the surface of the coating, forming tiny particulate contaminants, which will cause the failure of the micro-particle contaminants in the etching process. Summary of the invention

[0004] The technical problem solved by the present invention is to provide a plasma reaction device, a semiconductor component and a processing method thereof to reduce particle pollutants.

[0005] In order to solve the above technical problems, the present invention provides a method for processing semiconductor components, comprising: providing a component, wherein the surface of the component includes a polycrystalline structure; performing an ion implantation process on the polycrystalline structure; after the ion implantation process, performing a microwave crystallization process to transform the polycrystalline structure into a quasi-single crystal structure, wherein the diffraction peak spectrum obtained by X-ray diffraction of the component with the quasi-single crystal structure includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least lower than 1 / 25 of the intensity of the main peak.

[0006] Optionally, the component is a sintered body, and the sintered body is a polycrystalline structure before the ion implantation process.

[0007] Optionally, the material of the sintered body includes: rare earth metal oxide; after the microwave crystallization treatment, the sintered body is a rare earth metal oxyfluoride sintered body or a rare earth metal fluoride sintered body; or, the material of the sintered body includes: rare earth metal oxyfluoride; after the microwave crystallization treatment, the sintered body is a rare earth metal fluoride sintered body.

[0008] Optionally, the component includes: a component body and a corrosion-resistant coating located on the component body, and the corrosion-resistant coating is a polycrystalline structure before the ion implantation process.

[0009] Optionally, the formation process of the corrosion-resistant coating includes: a physical vapor deposition process, a thermal spraying process, a plasma spraying process or an atomic layer deposition process.

[0010] Optionally, the material of the corrosion-resistant coating is rare earth metal oxide; after the microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal oxyfluoride coating or a rare earth metal fluoride coating; or, the material of the corrosion-resistant coating is rare earth metal oxyfluoride, and after the microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal fluoride coating.

[0011] Optionally, the rare earth metal includes at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Td, Gd, Dy, Ho, Er, Tm, Yb and Lu.

[0012] Optionally, the parameters of the ion implantation process include: the implanted ions include fluorine ions, the implantation energy is: 10 keV to 80 keV, the implantation ion concentration is: 10 23 Number of atoms / cm2~10 25 The number of atoms / square centimeter, the injection time is 100 minutes to 140 minutes, and the room temperature is 25 degrees Celsius to 40 degrees Celsius.

[0013] Optionally, the implantation energy is higher than the energy to which the semiconductor component is subjected during the etching process.

[0014] Optionally, the parameters of the microwave crystallization treatment include: power of 1500 watts to 2500 watts, temperature of 80 degrees Celsius to 120 degrees Celsius, and time of 20 minutes to 40 minutes.

[0015] Correspondingly, the present invention also provides a semiconductor component, including: a component, wherein the surface of the component includes a quasi-single crystal structure, and the diffraction peak spectrum obtained by X-ray diffraction of the component with the quasi-single crystal structure includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least lower than 1 / 25 of the intensity of the main peak, and the half-peak width of the main peak is less than 1°.

[0016] Optionally, the component is a sintered body, and the sintered body is a rare earth metal oxyfluoride sintered body or a rare earth metal fluoride sintered body.

[0017] Optionally, the component includes: a component body and a corrosion-resistant coating located on the component body; the corrosion-resistant coating is a single-crystal-like structure, and the material of the corrosion-resistant coating includes: a rare earth metal oxyfluoride coating or a rare earth metal fluoride coating.

[0018] Optionally, the intensity of each secondary peak is at least 1 / 300 lower than the intensity of the primary peak.

[0019] Optionally, the intensity of each secondary peak is at least 1 / 1000 lower than the intensity of the primary peak.

[0020] Correspondingly, the present invention also provides a plasma reaction device, comprising: a reaction chamber, wherein the reaction chamber is a plasma environment; and the above-mentioned semiconductor component, which is exposed to the plasma environment.

[0021] Optionally, the plasma reaction device is a capacitively coupled plasma reaction device; the components include: at least one of a gas shower head, a gasket, a nozzle, a gas distribution plate, an electrostatic chuck, a focusing ring, an insulating ring, a covering ring, and a plasma confinement device.

[0022] Optionally, the plasma reaction device is an inductively coupled plasma reaction device; the components include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a plasma confinement device.

[0023] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0024] In the processing method of semiconductor components provided by the technical solution of the present invention, the surface of the component includes a polycrystalline structure. First, fluorine-containing ions are injected into the polycrystalline structure through an ion implantation process. During the injection of fluorine-containing ions, the original crystal plane of the polycrystalline structure is broken and a new crystal plane is re-formed. In addition, the newly formed crystal plane is more susceptible to the subsequent microwave crystallization treatment. The microwave crystallization treatment can input energy to the newly formed crystal plane to rearrange its atoms, which is conducive to the formation of a single-crystal-like structure. The single-crystal-like structure has a basically consistent atomic arrangement orientation and a basically the same atomic density, which can greatly reduce the probability of failure caused by local preferential fluorination, improve plasma corrosion resistance, and further improve process yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a structural schematic diagram of a plasma processing device of the present invention;

[0026] Figure 2 It is a structural schematic diagram of another plasma processing device of the present invention;

[0027] Figure 3 It is a structural schematic diagram of a method for processing semiconductor components of the present invention;

[0028] Figure 4 , Figure 6 and Figure 7 It is a structural schematic diagram of each step of a semiconductor component processing method of the present invention;

[0029] Figure 5 yes Figure 4 The XRD diagram of the parts including polycrystalline structure;

[0030] Figure 8 yes Figure 7 XRD pattern of the parts after microwave crystallization treatment. DETAILED DESCRIPTION

[0031] As described in the background art, existing semiconductor components are prone to particle contamination.

[0032] The study found that: with the increasingly harsh corrosion environment such as plasma, the existing corrosion-resistant coatings (such as Yb2O3, Y2O3, YF3, YOF, etc.) gradually show failure of micro-particle contamination and cannot better meet the process requirements. The main reason for the failure of these corrosion-resistant coatings is that the existing corrosion-resistant coatings are polycrystalline structures. Under the physical bombardment and chemical corrosion of increasingly strong plasma, the oriented grains with low atomic density on the surface of the coating will be preferentially fluorinated, and the grain volume will expand. After exceeding a certain threshold, it will fall off from the surface of the coating, forming tiny particle contaminants, causing the micro-particle contaminants to fail in the etching process.

[0033] The XRD spectrum of the corrosion-resistant coating Yb2O3 in the prior art is composed of crystal planes with different orientations, such as (440), (222), (211), etc., indicating that the atomic arrangement in the Yb2O3 coating has different directions. Therefore, under actual service conditions, the corrosion resistance effect exhibited is the average value of the corrosion resistance effects of these atoms arranged in different orientations. When failure behavior occurs, it can be judged that the crystal grains with the lowest atomic surface density will corrode first and form microparticle pollutants.

[0034] To this end, attempts are made to form a single crystal or quasi-single crystal structure to solve the above defects. The prior art usually uses a single crystal target or an optimized coating preparation process, while the technical solution of the present invention cooperates with an ion implantation process and a microwave crystallization process to prepare a quasi-single crystal structure. The diffraction peak spectrum obtained by X-ray diffraction of the parts of the quasi-single crystal structure consists of a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 lower than the intensity of the main peak. The quasi-single crystal structure has strong corrosion resistance and is conducive to reducing particle contamination.

[0035] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0036] Figure 1 The figure is a schematic structural diagram of a plasma processing device according to the present invention.

[0037] Please refer to Figure 1The plasma reaction device includes: a reaction chamber 100, the reaction chamber 100 is a plasma environment, the semiconductor components and the inner wall of the reaction chamber 100 are exposed to the plasma environment, and the plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma or O-containing plasma.

[0038] The plasma reaction device further includes a base 101, which is used to carry a substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of semiconductor components from being corroded by plasma, it is necessary to improve the corrosion resistance of semiconductor components.

[0039] In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device, and accordingly, the semiconductor components exposed to the plasma environment include: a shower head 102, an upper grounding ring 104, a moving ring, a gas distribution plate 105, a gas buffer plate, an electrostatic suction cup assembly 103, a lower grounding ring 106, a cover ring 107, a focusing ring 108, an insulating ring, and at least one of a plasma confinement device 109.

[0040] Figure 2 It is a schematic structural diagram of another plasma processing device of the present invention.

[0041] In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor components exposed to the plasma environment include: a ceramic plate, an inner sleeve 600, a gas nozzle 601, a gas distribution plate, a gas pipe flange, an electrostatic suction cup assembly 602, a covering ring 603, a focusing ring 604, an insulating ring and at least one of a plasma confinement device 605.

[0042] During the plasma etching process, physical bombardment and chemical reactions will also act on all semiconductor components in contact with the plasma inside the etching chamber, causing corrosion to the semiconductor components. Long-term exposure to the plasma corrosion environment will damage the surface structure, causing the precipitation of bulk components, which will separate from the surface to form tiny particles and contaminate the wafer. Advanced semiconductor manufacturing has strict requirements for tiny particle contamination, such as the number of particles larger than 45nm is 0, and the ground adhesion rate is less than 10. Therefore, semiconductor components exposed to the plasma environment need to have strong corrosion resistance.

[0043] The following is a detailed description of the processing methods for semiconductor components:

[0044] Figure 3 It is a structural schematic diagram of a method for processing semiconductor components of the present invention.

[0045] Please refer to Figure 3 , step S1: providing a component, the component including a polycrystalline structure; step S2: performing an ion implantation process on the polycrystalline structure; step S3: performing a microwave crystallization process after the ion implantation process to transform the polycrystalline structure into a quasi-single crystal structure, wherein the diffraction peak spectrum obtained by X-ray diffraction of the component with the quasi-single crystal structure includes a main peak and a plurality of secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak.

[0046] The following is a detailed description of the structural diagram of each step:

[0047] Figure 4 , Figure 6 and Figure 7 It is a structural schematic diagram of each step of a semiconductor component processing method of the present invention; Figure 5 yes Figure 4 XRD diagram of semiconductor components; Figure 8 yes Figure 7 XRD pattern of semiconductor components after microwave crystallization.

[0048] Please refer to Figure 4 and Figure 5 , a component 300 is provided, wherein the component 300 includes a polycrystalline structure.

[0049] In this embodiment, the component 300 is a sintered body, and the sintered body is a polycrystalline structure. The material of the sintered body is a rare earth metal oxide or a rare earth metal oxyfluoride. Here, the sintered body is a yttrium oxide sintered body as an example for description:

[0050] from Figure 5 It can be seen that the yttrium oxide sintered body includes multiple crystal orientations, such as: (222)(211)(440). When the component 300 faces plasma corrosion, the atoms in different crystal orientations have different corrosion resistance. Therefore, under actual service conditions, the corrosion resistance effect exhibited is the average of the corrosion resistance effects of these atoms in different crystal orientations. When failure behavior occurs, the grains with the crystal orientation with the lowest atomic surface density will corrode first and easily form microparticle pollutants. In order to improve the corrosion resistance of semiconductor components, it is achieved through the synergistic effect of ion implantation and microwave crystallization as follows:

[0051] Please refer to Figure 6 , performing an ion implantation process on the polycrystalline structure.

[0052] Ions are implanted into the polycrystalline structure through an ion implantation process, and during the implantation of the ions, the original crystal plane of the polycrystalline structure is broken and a new crystal plane is formed. The newly formed crystal plane is more susceptible to the subsequent microwave crystallization treatment, and the microwave crystallization treatment can input energy to the newly formed crystal plane to rearrange its atoms, which is conducive to forming a single-crystal-like structure.

[0053] The parameters of the ion implantation process include: the implanted ions include fluorine ions, the implantation energy is: 10 keV to 80 keV, the implantation ion concentration is: 10 23 Number of atoms / cm2~10 25 The number of atoms / square centimeter, the injection time is 100 minutes to 140 minutes, and the room temperature is 25 degrees Celsius to 40 degrees Celsius.

[0054] The significance of selecting the injection energy is that if the injection energy is less than 10 keV, the original crystal plane of the polycrystalline structure is difficult to be destroyed and it is difficult to form a new crystal plane. Then the subsequent impact of microwave crystallization is small, and it is difficult to form a single crystal structure, and the corrosion resistance of the semiconductor components is poor. If the injection energy is greater than 80 keV, the requirements for the ion implantation equipment will be too high.

[0055] Furthermore, the injection energy is higher than the energy to which the semiconductor components are subjected during the etching process, so that the polycrystalline structure can be fully fluorinated during the plasma injection process, thereby preventing the fluorine in the process gas from entering the polycrystalline structure during the etching process if the energy to which the semiconductor components are subjected during the etching process is higher than the injection energy, and causing the volume of the fluorinated polycrystalline structure to expand and fall off. Therefore, the injection energy being higher than the energy to which the semiconductor components are subjected during the etching process is beneficial to further reducing particle contamination.

[0056] Please refer to Figure 7 After the ion implantation process, a microwave crystallization process is performed to transform the polycrystalline structure into a quasi-single crystal structure, and the diffraction peak spectrum obtained by X-ray diffraction of the parts of the quasi-single crystal structure includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 lower than the intensity of the main peak.

[0057] The microwave crystallization process is carried out in a microwave crystallization device, such as Figure 7 As shown, the microwave crystallization device includes: a reaction chamber 400; a carrier platform 404, which is arranged at the bottom of the reaction chamber 400; a component 300, which is placed on the carrier platform 404; and a rotating component 401, which is arranged below the carrier platform 404 and is used to drive the carrier platform 404 and the component 300 located on the carrier platform 404 to rotate around the central axis of the carrier platform 404, so that the microwave can irradiate various areas of the component 300.

[0058] The microwave crystallization device also includes: a microwave source 403 and a waveguide transmission system 402. The microwave source 403 is used to generate microwaves of preset power, and the waveguide transmission system 402 is used to transmit microwaves to the reaction chamber 400 so as to perform microwave crystallization on the surface of the component 300, which is beneficial to transmit energy to the surface of the component 300, so that it can be rearranged and form a single crystal-like structure.

[0059] The newly formed crystal planes on the surface of the component after ion implantation are susceptible to the microwave crystallization treatment, which can input energy into the newly formed crystal planes to rearrange their atoms, thereby helping to reduce the intensity ratio of the secondary peak to the main peak in the diffraction peak spectrum obtained by X-ray diffraction on the surface of the component, thus helping to form a single-crystal-like structure, such as Figure 8 As shown, from Figure 8 It can be seen that after microwave crystallization treatment, the diffraction peak spectrum obtained by X-ray diffraction on the surface of the component includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 lower than the intensity of the main peak, that is, the surface of the component presents a quasi-single crystal structure. Under actual service conditions, the atomic arrangement difference at different positions of the quasi-single crystal structure is small, so there is no grain at a certain position that is preferentially corroded due to poor corrosion resistance, and therefore, particle contamination is not easy to occur.

[0060] The parameters of the microwave crystallization treatment include: power of 1500 watts to 2500 watts, temperature of 80 degrees Celsius to 120 degrees Celsius, and time of 20 minutes to 40 minutes.

[0061] The significance of selecting the power range of the microwave crystallization treatment is that: if the power is less than 1500 watts, the microwave crystallization treatment will not have enough effect on the surface of the component after ion implantation, making it difficult to form a single crystal-like structure after microwave crystallization treatment; if the power is greater than 2500 watts, not only will it consume too much energy, but it will also easily cause damage to the components.

[0062] In another embodiment, the intensity of each secondary peak is at least 1 / 300 lower than the intensity of the main peak, that is, the surface of the component has a higher degree of single-crystal-like structure. Under actual service conditions, the atomic arrangement difference at different positions of the single-crystal-like structure is small, so there is no grain at a certain position that is preferentially corroded due to poor corrosion resistance, and therefore, particle contamination is not easily generated.

[0063] In another embodiment, the intensity of each secondary peak is at least 1 / 1000 lower than the intensity of the main peak, the surface of the component is basically a single crystal structure, and the single crystal structure has a consistent atomic arrangement orientation and the same atomic density, which can greatly reduce the probability of failure caused by local preferential fluorination, improve plasma corrosion resistance, and further improve process yield.

[0064] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for processing a semiconductor component, characterized in that: include: Providing a component, wherein a surface of the component comprises a polycrystalline structure; performing an ion implantation process on the polycrystalline structure; After the ion implantation process, microwave crystallization treatment is performed to transform the polycrystalline structure into a quasi-single crystal structure. The diffraction peak spectrum obtained by X-ray diffraction of the parts of the quasi-single crystal structure includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak.

2. The method for processing a semiconductor component according to claim 1, wherein: The component is a sintered body, and the sintered body is a polycrystalline structure before the ion implantation process.

3. The method for processing a semiconductor component according to claim 2, wherein: The material of the sintered body includes: rare earth metal oxide; after the microwave crystallization treatment, the sintered body is a rare earth metal oxyfluoride sintered body or a rare earth metal fluoride sintered body; or, the material of the sintered body includes: rare earth metal oxyfluoride; after the microwave crystallization treatment, the sintered body is a rare earth metal fluoride sintered body.

4. The method for processing a semiconductor component according to claim 1, wherein: The component comprises: a component body and a corrosion-resistant coating on the component body, and the corrosion-resistant coating is a polycrystalline structure before the ion implantation process.

5. The method for processing a semiconductor component according to claim 4, wherein: The formation process of the corrosion-resistant coating includes: physical vapor deposition process, thermal spraying process, plasma spraying process or atomic layer deposition process.

6. The method for processing a semiconductor component according to claim 4, wherein: The material of the corrosion-resistant coating is rare earth metal oxide; after the microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal oxyfluoride coating or a rare earth metal fluoride coating; or, the material of the corrosion-resistant coating is a rare earth metal oxyfluoride, and after the microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal fluoride coating.

7. The method for processing a semiconductor component according to claim 3 or 6, characterized in that: The rare earth metal includes at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Td, Gd, Dy, Ho, Er, Tm, Yb and Lu.

8. The method for processing a semiconductor component according to claim 1, wherein: The parameters of the ion implantation process include: the implanted ions include fluorine ions, the implantation energy is: 10 keV to 80 keV, the implantation ion concentration is: 10 23 Number of atoms / cm2~10 25 The number of atoms / square centimeter, the injection time is 100 minutes to 140 minutes, and the room temperature is 25 degrees Celsius to 40 degrees Celsius.

9. The method for processing a semiconductor component according to claim 8, wherein: The implantation energy is higher than the energy to which the semiconductor component is subjected during the etching process.

10. The method for processing a semiconductor component according to claim 1, wherein: The parameters of the microwave crystallization treatment include: power of 1500 watts to 2500 watts, temperature of 80 degrees Celsius to 120 degrees Celsius, and time of 20 minutes to 40 minutes.

11. A semiconductor component, characterized in that: This component contains: A component, wherein the surface of the component comprises a quasi-single crystal structure, and the diffraction peak spectrum obtained by X-ray diffraction of the component with the quasi-single crystal structure comprises a main peak and a plurality of secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak, and the half-peak width of the main peak is less than 1°.

12. The semiconductor component according to claim 11, wherein: The component is a sintered body, and the sintered body is a rare earth metal oxyfluoride sintered body or a rare earth metal fluoride sintered body.

13. The semiconductor component according to claim 11, wherein: The component comprises: a component body and a corrosion-resistant coating located on the component body; the corrosion-resistant coating is a single-crystal-like structure, and the material of the corrosion-resistant coating comprises: a rare earth metal fluoride oxide coating or a rare earth metal fluoride coating.

14. The semiconductor component according to claim 11, wherein: The intensity of each secondary peak is at least 1 / 300 lower than the intensity of the primary peak.

15. The semiconductor component according to claim 14, wherein: The intensity of each secondary peak is at least 1 / 1000 lower than the intensity of the primary peak.

16. A plasma reaction device, characterized in that: include: A reaction chamber, wherein the reaction chamber is a plasma environment; The semiconductor component according to any one of claims 11 to 15, which is exposed to the plasma environment.

17. The plasma reaction device according to claim 16, characterized in that: The plasma reaction device is a capacitively coupled plasma reaction device; the components include: at least one of a gas shower head, a gasket, a nozzle, a gas distribution plate, an electrostatic chuck, a focusing ring, an insulating ring, a cover ring or a plasma confinement device.

18. The plasma reaction device according to claim 16, characterized in that: The plasma reaction device is an inductively coupled plasma reaction device; the components include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a plasma confinement device.

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