Semiconductor processing equipment and gas distribution device thereof

Abstract

The invention discloses semiconductor processing equipment and a gas distribution device thereof, the gas distribution device is internally provided with two gas distribution channels which are isolated and independent from each other, each gas distribution channel adopts an independent gas inlet channel and an independent gas extraction channel, and each gas distribution channel comprises a plurality of gas flow channels; reaction gas in each gas flow channel is distributed into a reaction cavity of the semiconductor processing equipment through the gas spraying assembly. The airflow channel is prevented from being in a shape with a large bending radian, so that the flowing speed of reaction gas is effectively increased, vortex is avoided, the gas can be rapidly and completely exhausted, gas residues are avoided, and the process efficiency is improved. Reliable physical isolation between different gas distribution channels is ensured, reaction gas is prevented from being mixed in advance to generate particles, and the product yield is improved. And micropores are distributed in the gas spraying assembly, so that reaction gas is ensured to be uniformly diffused into the reaction cavity, and the uniformity of the substrate manufacturing process is ensured.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a semiconductor processing equipment and a gas distribution device thereof. Background Art

[0002] In semiconductor processing equipment, multiple chemical gases need to be introduced into the reaction chamber to process the substrate. Different chemical gases should avoid meeting each other before entering the reaction chamber. At present, different air inlet channels are mainly used to transport different chemical gases into the reaction chamber. In order to achieve physical isolation between different gases, the arrangement of the gas channels is usually designed to be more complicated. Most of the time, the gas channels are set as spiral channels, which leads to longer gas channels. The time for the gas to flow from the gas injection port to the exhaust port is too long, and the gas flow is subject to greater resistance. The gas is prone to generate eddy currents when flowing in the gas channel, which makes it difficult for the gas to be quickly discharged from the gas channel, resulting in excess reaction gas remaining in the gas channel, reducing process efficiency. The reaction gas may produce particles if it remains for a long time, further affecting product quality. In addition, the spiral gas channel is prone to gas swarming, resulting in failure of physical isolation between different gas channels, and different reaction gases react prematurely to produce granular by-products, which leads to product defects and adverse effects on the yield and reliability of the chip.

[0003] The statements herein merely provide background art related to the present invention and do not necessarily constitute prior art. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor processing equipment and a gas distribution device thereof, which effectively improves the flow speed of the reaction gas, avoids the generation of eddy currents, facilitates the rapid exhaust of the gas, avoids gas residue, improves the process efficiency, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from mixing in advance to produce particulate matter, ensures that the reaction gas is evenly diffused into the reaction chamber, and ensures the uniformity of the substrate process.

[0005] In order to achieve the above object, the present invention provides a gas distribution device, which is arranged in a reaction chamber of a semiconductor processing device, and the gas distribution device comprises:

[0006] A gas distribution plate, wherein the gas distribution plate has a first gas distribution channel and a second gas distribution channel which are isolated and independent from each other, wherein the first gas distribution channel comprises a first inlet diffusion area, a plurality of first gas flow channels and a first outlet diffusion area, wherein each of the first gas flow channels comprises an inlet end and an outlet end, wherein the inlet ends of the plurality of first gas flow channels are connected to the first inlet diffusion area, and the outlet ends of the plurality of first gas flow channels are connected to the first outlet diffusion area, wherein the second gas distribution channel comprises a second inlet diffusion area, a plurality of second gas flow channels and a second outlet diffusion area, wherein each of the second gas flow channels comprises an inlet end and an outlet end, wherein the inlet ends of the plurality of second gas flow channels are connected to the second inlet diffusion area, and the outlet ends of the plurality of second gas flow channels are connected to the second outlet diffusion area;

[0007] An air intake module, the air intake module comprising at least one first air intake channel and at least one second air intake channel, the first air intake channel being connected to the first inlet diffusion zone, the second air intake channel being connected to the second inlet diffusion zone, the air intake module being used to deliver the reaction gas into the gas distribution plate;

[0008] A gas extraction module, the gas extraction module comprising at least one first gas extraction channel and at least one second gas extraction channel, the first gas extraction channel is connected to the first outlet diffusion area, the second gas extraction channel is connected to the second outlet diffusion area, the gas extraction module is used to discharge the reaction gas in the gas distribution plate;

[0009] A gas spray assembly is communicated with the first gas distribution channel and the second gas distribution channel, and is used for delivering reaction gas into the reaction chamber.

[0010] The plurality of first air flow channels are parallel to each other, and the plurality of second air flow channels are parallel to each other.

[0011] The ventilation volume of each of the first air flow channels is the same, and the ventilation volume of each of the second air flow channels is the same.

[0012] Optionally, the gas distribution plate comprises a cover plate, a first gas diffusion plate and a second gas diffusion plate which are stacked in layers;

[0013] The upper surface of the first gas diffusion plate is provided with a plurality of first grooves, and a first arc groove and a second arc groove located at the periphery of the first groove, the first arc groove is connected to one end of the first groove, the second arc groove is connected to the other end of the first groove, the first groove and the lower surface of the cover plate form the first air flow channel, the first arc groove and the lower surface of the cover plate form the first inlet diffusion area, and the second arc groove and the lower surface of the cover plate form the first outlet diffusion area;

[0014] A plurality of second grooves, and a third arc groove and a fourth arc groove located at the periphery of the second grooves are arranged on the upper surface of the second gas diffusion plate. The second grooves and the lower surface of the first gas diffusion plate form the second air flow channel. The third arc groove and the lower surface of the first gas diffusion plate form the second inlet diffusion area. The fourth arc groove and the lower surface of the first gas diffusion plate form the second outlet diffusion area.

[0015] The first arc groove and the second arc groove are interconnected to form a complete circular ring; the third arc groove and the fourth arc groove are interconnected to form a complete circular ring.

[0016] The depth of the first groove is smaller than the thickness of the first gas diffusion plate, and the depth of the second groove is smaller than the thickness of the second gas diffusion plate.

[0017] The cross section of the first groove is rectangular or V-shaped, and the cross section of the second groove is rectangular or V-shaped.

[0018] The gas spray assembly comprises a plurality of first gas spray channels and a plurality of second gas spray channels;

[0019] One end of the first gas spray channel is connected to the first gas flow channel, and the other end is located on the lower surface of the second gas diffusion plate;

[0020] One end of the second gas spray channel is communicated with the second gas flow channel, and the other end is located on the lower surface of the second gas diffusion plate.

[0021] The gas distribution plate includes a first sealing assembly located between a lower surface of the cover plate and an upper surface of the first gas diffusion plate, and a second sealing assembly located between a lower surface of the first gas diffusion plate and an upper surface of the second gas diffusion plate.

[0022] Optionally, the gas distribution plate comprises a plurality of spaced block bars, the upper surface of the block bars is covered with a top cover, and the lower surface of the block bars is in contact with the gas spray assembly; the gaps between adjacent block bars form a first gas flow channel in the first gas distribution channel; the lower surface of the block bars has a third groove, and the third groove forms a second gas flow channel in the second gas distribution channel;

[0023] The gas distribution plate also includes a first gas separation plate and a second gas separation plate, the first gas separation plate and the second gas separation plate are respectively arranged at both ends of the block bar grid, a first inlet diffusion zone is formed between the upper surface of the first gas separation plate and the top cover, the first inlet diffusion zone is connected to the gap between the block bar grid, a second inlet diffusion zone is formed between the lower surface of the first gas separation plate and the gas spray assembly, the second inlet diffusion zone is connected to the third groove, a first outlet diffusion zone is formed between the upper surface of the second gas separation plate and the top cover, the first outlet diffusion zone is connected to the gap between the block bar grid, a second outlet diffusion zone is formed between the lower surface of the second gas separation plate and the gas spray assembly, the second outlet diffusion zone is connected to the third groove.

[0024] The air intake module includes at least one concentric air inlet, and the concentric air inlet includes an inner air intake tube and an outer air intake tube which are arranged concentrically. The inner air intake tube is connected to the first gas separator plate, and the internal space of the inner air intake tube forms the first air intake channel, and the second air intake channel is formed between the inner air intake tube and the outer air intake tube; the air exhaust module includes at least one concentric air exhaust port, and the concentric air exhaust port includes an inner air exhaust tube and an outer air exhaust tube which are arranged concentrically. The inner air exhaust tube is connected to the second gas separator plate, and the internal space of the inner air exhaust tube forms the first air exhaust channel, and the second air exhaust channel is formed between the inner air exhaust tube and the outer air exhaust tube.

[0025] The gas spray assembly comprises a porous material plate having a plurality of micropores, wherein the micropores are connected to the first gas flow channel and the second gas flow channel.

[0026] The present invention also provides a semiconductor processing device, comprising:

[0027] Reaction chamber;

[0028] The gas distribution device is arranged at the top of the reaction chamber;

[0029] The base is arranged in the reaction chamber and is used for carrying the substrate.

[0030] The first gas inlet channel is connected to an external first gas source, and the second gas inlet channel is connected to an external second gas source.

[0031] The first air extraction channel and the second air extraction channel are connected to an external air extraction device.

[0032] The semiconductor processing equipment is a deposition equipment or an etching equipment.

[0033] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0034] The present invention effectively improves the flow speed of the reaction gas in each gas distribution channel in the gas distribution plate, avoids the generation of vortexes when the gas flows in the gas channel, is conducive to the rapid discharge of the gas from the gas channel, improves the process efficiency, avoids the reaction gas remaining in the gas channel to generate particulate matter, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from mixing in advance before entering the reaction chamber to generate particulate matter, ensures that the reaction gas is evenly diffused to the surface of the substrate in the reaction chamber, ensures the uniformity of the substrate process, and improves the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a structural schematic diagram of a semiconductor processing device provided in an embodiment of the present invention.

[0036] Figure 2 It is a structural schematic diagram of a gas distribution device provided in an embodiment of the present invention.

[0037] Figure 3 It is a schematic diagram of the structure of a gas distribution device provided in one embodiment of the present invention.

[0038] Figure 4 yes Figure 3 A partial vertical section view of .

[0039] Figure 5 yes Figure 3 A top perspective view of the first gas diffuser plate.

[0040] Figure 6 yes Figure 3 A top perspective view of the second gas diffuser plate.

[0041] Figure 7 It is a schematic structural diagram of a gas distribution device provided in another embodiment of the present invention.

[0042] Figure 8 yes Figure 7 Schematic diagram of the cross-sectional perspective structure.

[0043] Fig. 9 yes Figure 7 Schematic diagram of the front structure of the medium block bar grid and gas separator plate.

[0044] Fig.10 yes Figure 7 Schematic diagram of the back structure of the medium block bar grid and gas separator.

[0045] Fig.11 yes Figure 7 Schematic diagram of the cross-sectional structure of the air intake module and the exhaust module. DETAILED DESCRIPTION

[0046] The following is based on Figures 1 to 11 , specific embodiments of the present invention are described in detail.

[0047] like Figure 1 As shown, the present invention provides a semiconductor processing device, which can be a deposition device or an etching device. The semiconductor processing device comprises a reaction chamber 1, a base 2 is arranged in the reaction chamber 1, and is used to carry a substrate 3. A gas distribution device 4 is arranged on the top of the reaction chamber 1, and is used to introduce different chemical gases into the reaction chamber 1 to process the substrate 3.

[0048] like Figure 2 As shown, the gas distribution device 4 includes a gas distribution plate 401, an air intake module 402, an air extraction module 403 and a gas spray assembly 404. The gas distribution plate 401 has a first gas distribution channel and a second gas distribution channel that are isolated and independent from each other. The first gas distribution channel includes a first inlet diffusion area, a plurality of first airflow channels and a first outlet diffusion area. Each of the first airflow channels includes an inlet end and an outlet end. The inlet ends of the plurality of first airflow channels are connected to the first inlet diffusion area, and the outlet ends of the plurality of first airflow channels are connected to the first outlet diffusion area. The second gas distribution channel includes a second inlet diffusion area, a plurality of second airflow channels and a second outlet diffusion area. Each of the second airflow channels includes an inlet end and an outlet end. The inlet ends of the plurality of second airflow channels are connected to the second inlet diffusion area, and the outlet ends of the plurality of second airflow channels are connected to the second outlet diffusion area. The gas inlet module 402 includes at least one first gas inlet channel 402-1 and at least one second gas inlet channel 402-2, wherein the first gas inlet channel 402-1 is connected to the first inlet diffusion zone, and the second gas inlet channel 402-2 is connected to the second inlet diffusion zone, and the gas inlet module 402 is used to deliver the reaction gas into the gas distribution plate 401. The gas extraction module 403 includes at least one first gas extraction channel 403-1 and at least one second gas extraction channel 403-2, wherein the first gas extraction channel 403-1 is connected to the first outlet diffusion zone, and the second gas extraction channel 403-2 is connected to the second outlet diffusion zone, and the gas extraction module 403 is used to discharge the reaction gas in the gas distribution plate 401. The gas spray assembly 404 is connected to the first gas distribution channel and the second gas distribution channel, and is used to deliver the reaction gas into the reaction chamber 1.

[0049] In one embodiment of the present invention, Figure 3 As shown, the gas distribution plate 401 includes a cover plate 405, a first gas diffusion plate 406 and a second gas diffusion plate 407 stacked in layers from top to bottom. Figure 4 and Figure 5As shown, the upper surface of the first gas diffusion plate 406 is provided with a plurality of first grooves 408, and a first arc groove 409 and a second arc groove 410 located at the periphery of the first groove 408, one end of the first groove 408 is connected to the first arc groove 409, the first arc groove 409 is connected to the first air inlet channel 402-1, and the first air inlet channel 402-1 is connected to the external first gas source 501 (such as Figure 1 The other end of the first groove 409 is connected to the second arc groove 410, and the second arc groove 410 is connected to the first air extraction channel 403-1, and the first air extraction channel 403-1 is connected to the external air extraction device 6 (as shown in FIG. Figure 1 As shown in FIG. 4 , the first groove 408 and the lower surface of the cover plate 405 form a first air flow channel, the first arc-shaped groove 409 and the lower surface of the cover plate 405 form a first inlet diffusion area, and the second arc-shaped groove 410 and the lower surface of the cover plate 405 form a first outlet diffusion area. Figure 4 and Figure 6 As shown, the upper surface of the second gas diffusion plate 407 is provided with a plurality of second grooves 411, and a third arc groove 412 and a fourth arc groove 413 located at the periphery of the second groove 411, one end of the second groove 411 is connected to the third arc groove 412, the third arc groove 412 is connected to the second air inlet channel 402-2, and the second air inlet channel 402-2 is connected to the external second gas source 502 (such as Figure 1 The other end of the second groove 411 is connected to the fourth arc groove 413, the fourth arc groove 413 is connected to the second air extraction channel 403-2, and the second air extraction channel 403-2 is connected to the external air extraction device 6 (as shown in FIG. Figure 1 As shown in FIG. 4 , the second groove 411 and the lower surface of the first gas diffusion plate 406 form a second air flow channel, the third arc groove 412 and the lower surface of the first gas diffusion plate 406 form a second inlet diffusion area, and the fourth arc groove 413 and the lower surface of the first gas diffusion plate 406 form a second outlet diffusion area. Figure 3 and Figure 4As shown, the gas spray assembly 404 includes a plurality of first gas spray channels 404-1 and a plurality of second gas spray channels 404-2, one end of the first gas spray channel 404-1 is connected to the first groove 408, and the other end extends to the lower surface of the second gas diffusion plate 407, and is used to deliver the reaction gas from the first gas distribution channel into the reaction chamber 1, and one end of the second gas spray channel 404-2 is connected to the second groove 411, and the other end extends to the lower surface of the second gas diffusion plate 407, and is used to deliver the reaction gas from the second gas distribution channel into the reaction chamber 1.

[0050] In this embodiment, in the top view of the first gas diffusion plate 406, the first groove 408 is not set to have a large curvature shape, and the first groove 408 can be set to have a small angle arc type, or a bending line type with an obtuse angle. Preferably, the first groove 408 is set as follows: Figure 5 The first gas flow channels 408 are arranged in parallel with each other to achieve the same gas flow direction in all the first gas flow channels. The reaction gas entering the first inlet diffusion zone formed by the first arc groove 409 from the first gas inlet channel 402-1 can quickly reach the first outlet diffusion zone formed by the second arc groove 410 through the first gas flow channel and be discharged from the first gas extraction channel 403-1, which reduces the bending angle of the first gas flow channel, improves the speed of extracting the reaction gas in the first gas distribution channel, and avoids the gas flowing in the gas channel to generate vortex, which is conducive to the rapid exhaust of gas from the gas channel and improves the process efficiency. Figure 4 As shown, setting the cross section of the first groove 408 to be rectangular or V-shaped is conducive to increasing the flow rate of the reaction gas in the first gas flow channel formed by the first groove 408, avoiding the reaction gas from remaining in the first groove 408, and facilitating the rapid exhaust of the gas from the gas channel, further improving the process efficiency. Similarly, in the top view of the second gas diffusion plate 407, that is, Figure 5 In the viewing direction, the second groove 411 is also configured as an arc type with a smaller angle, or a bending line type with an obtuse angle. Preferably, the second groove 411 is configured as follows: Figure 6 As shown, the second grooves 411 are in a straight line shape, and each first air flow channel formed by the second grooves 411 is arranged parallel to each other, and the cross section of the second grooves 411 is rectangular or V-shaped.

[0051] To ensure that the ventilation volume of each first gas flow channel formed by the first groove 408 is the same, for first gas flow channels of different lengths, the ventilation volume of the first gas flow channel can be balanced by adjusting the cross-sectional area of ​​the first gas flow channel, for example, the depth of the first groove 408 with a shorter length is set deeper, or the width is set wider, so as to ensure that the reaction gas entering the first gas distribution channel from the first gas inlet channel 402-1 can be evenly distributed to each first gas flow channel, thereby ensuring that the reaction gas in the first gas distribution channel can be evenly distributed to the surface of the substrate 3 in the reaction chamber 1 through the first gas spray channel 404-1, so as to ensure the uniformity of the substrate process and the product yield. The first arc groove 409 and the second arc groove 410 are connected to each other to form a complete annular groove, and the first inlet diffusion area and the first outlet diffusion area are connected to form a complete annular area, which further promotes the reaction gas entering the first gas distribution channel to be evenly diffused and evenly distributed to each first gas flow channel, thereby ensuring that it enters the reaction chamber 1 evenly. Similarly, the ventilation volume of each second air flow channel formed by the second groove 411 is the same, and the third arc groove 412 and the fourth arc groove 413 are also connected to each other to form a complete ring.

[0052] like Figure 4 As shown, the depth of the first groove 408 is less than the thickness of the first gas diffusion plate 406, so as to prevent the first groove 408 from penetrating the first gas diffusion plate 406, thereby preventing the reaction gas flowing in the first groove 408 from leaking. Similarly, the depth of the second groove 411 is less than the thickness of the second gas diffusion plate 407, so as to prevent the second groove 411 from penetrating the second gas diffusion plate 407, thereby preventing the reaction gas flowing in the second groove 411 from leaking. Further, a first sealing component 414 is provided between the lower surface of the cover plate 405 and the upper surface of the first gas diffusion plate 406, and a second sealing component 415 is provided between the lower surface of the first gas diffusion plate 406 and the upper surface of the second gas diffusion plate 407. The first sealing component 414 and the second sealing component 415 further ensure the sealing of the first groove 408 and the second groove 411, prevent the reaction gas flowing in the first groove 408 and the second groove 411 from leaking and mixing, and ensure that different reaction gases in the gas distribution plate 401 can be reliably physically isolated.

[0053] The technical solution of the present invention effectively improves the flow speed of the reaction gas in each gas distribution channel in the gas distribution plate when it is extracted, avoids the generation of vortices when the gas flows in the gas channel, is conducive to the rapid discharge of gas from the gas channel, improves the process efficiency, avoids the reaction gas remaining in the gas channel to produce particulate matter, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from mixing in advance before entering the reaction chamber to produce particulate matter, and improves product yield.

[0054] In another embodiment of the present invention, Figure 7 to Figure 10 As shown, the gas distribution plate 401 includes a plurality of spaced-apart block bars, the upper surface of the block bar grid 416 is covered with a top cover 417, the lower surface of the block bar grid 416 is in contact with the gas spray assembly 404, and the first gas separator plate 418 and the second gas separator plate 419 are respectively provided at both ends of the block bar grid 416, the top surfaces of the first gas separator plate 418 and the second gas separator plate 409 are lower than the top surface of the block bar grid 416, and the bottom surfaces of the first gas separator plate 418 and the second gas separator plate 409 are higher than the bottom surface of the third groove 421.

[0055] like Figures 8 to 10 As shown, the gap 420 between the adjacent block-shaped bar grids 416 forms a first gas flow channel in the first gas distribution channel, and the lower surface of the block-shaped bar grid 416 has a third groove 421, and the third groove 421 forms a second gas flow channel in the second gas distribution channel. The first gas flow channel is formed between the adjacent block-shaped bar grids 416, and the second gas flow channel is formed on the lower surface of each block-shaped bar grid 416, so that the first gas flow channel and the second gas flow channel are reliably physically isolated.

[0056] The block-shaped bar grid 416 is generally configured to be in the shape of a long strip, and the gap 420 between adjacent block-shaped bar grids 416 is also in the shape of a long strip. Similarly, the third groove 421 located on the lower surface of the block-shaped bar grid 416 is generally configured to be in the shape of a long strip, and the third groove 421 is configured to be parallel to the block-shaped bar grid 416 in the length direction. By configuring the plurality of block-shaped bar grids 416 to be parallel to each other, the first gas flow channels formed by the gap 420 are also parallel to each other, and the second gas flow channels formed by the third groove 421 are also parallel to each other, so as to ensure that the gas flow directions in all the first gas flow channels are consistent, and the gas flow directions in all the second gas flow channels are also consistent, so as to increase the flow velocity of the gas in the first gas flow channel and the second gas flow channel, avoid vortices generated by the gas flowing in the gas channel, facilitate the rapid exhaust of the gas from the gas channel, and improve the process efficiency.

[0057] It is necessary to ensure that the ventilation volume of each of the first airflow channels formed by the gaps 420 between the adjacent block bars 416 is the same, and it is also necessary to ensure that the ventilation volume of each of the second airflow channels formed by the third grooves 421 is the same. For airflow channels of different lengths, the ventilation volume of the airflow channels can be balanced by adjusting the cross-sectional area of ​​the airflow channels, for example, the width of the shorter gap 420 is set wider, the depth of the shorter third groove 421 is set deeper, or the width is set wider, so as to ensure that the reaction gas can be evenly distributed to each of the first airflow channels and each of the second airflow channels, thereby ensuring that the reaction gas can be evenly distributed to the surface of the substrate 3 in the reaction chamber 1 through the gas spray assembly 404, so as to ensure the uniformity of the substrate process and ensure the product yield.

[0058] like Fig.11 As shown, a first inlet diffusion zone is formed between the upper surface of the first gas separator plate 418 and the top cover 417, a first outlet diffusion zone is formed between the upper surface of the second gas separator plate 419 and the top cover 417, the first inlet diffusion zone and the first outlet diffusion zone are both connected to the gap 420 between the block bars 416, that is, the first inlet diffusion zone and the first outlet diffusion zone are both connected to the first airflow channel, a second inlet diffusion zone is formed between the lower surface of the first gas separator plate 418 and the gas spray assembly 404, a second outlet diffusion zone is formed between the lower surface of the second gas separator plate 419 and the gas spray assembly 404, the second inlet diffusion zone and the second outlet diffusion zone are both connected to the third groove 421, that is, the second inlet diffusion zone and the second outlet diffusion zone are both connected to the second airflow channel. The first inlet diffusion zone and the second inlet diffusion zone are respectively formed on the upper surface and the lower surface of the first gas separator plate 418, ensuring reliable physical isolation between the first inlet diffusion zone and the second inlet diffusion zone. Likewise, the first outlet diffusion region and the second outlet diffusion region are formed on the upper surface and the lower surface of the second gas separator plate 419, respectively, to ensure reliable physical isolation between the first outlet diffusion region and the second outlet diffusion region.

[0059] like Figure 7 and Fig.11As shown, the air intake module 402 includes at least one concentric air intake port 4021, and the concentric air intake port 4021 includes a concentrically arranged air intake inner tube 422 and an air intake outer tube 423. The concentric arrangement can save space. The air intake inner tube 422 is connected to the first gas separator plate 418, and the internal space of the air intake inner tube 422 forms the first air intake channel 402-1. One end of the first air intake channel 402-1 is connected to the first inlet diffusion area on the upper surface of the first gas separator plate 418, and the other end of the first air intake channel 402-1 is connected to an external first gas source 501 (such as Figure 1 The second air inlet channel 402-2 is formed between the air inlet inner tube 422 and the air inlet outer tube 423, one end of the second air inlet channel 402-2 is connected to the second inlet diffusion area on the lower surface of the first gas separator plate 418, and the other end of the second air inlet channel 402-2 is connected to the external second gas source 502 (as shown in FIG. Figure 1 shown).

[0060] The exhaust module 403 includes at least one concentric exhaust port 4031, and the concentric exhaust port 4031 includes a concentrically arranged exhaust inner tube 424 and an exhaust outer tube 425, the exhaust inner tube 424 is connected to the second gas separation plate 419, and the internal space of the exhaust inner tube 424 forms the first exhaust channel 403-1, one end of the first exhaust channel 403-1 is connected to the first outlet diffusion area on the upper surface of the second gas separation plate 419, and the other end of the first exhaust channel 403-1 is connected to the external exhaust device 6 (such as Figure 1 The second gas extraction channel 403-2 is formed between the inner gas extraction tube 424 and the outer gas extraction tube. The second gas extraction channel 403-2 is connected to the second outlet diffusion area on the lower surface of the second gas separation plate 419. The other end of the second gas extraction channel 403-2 is connected to the external gas extraction device 6 (as shown in FIG. Figure 1 shown).

[0061] The gas spray components currently used usually require processing many small holes for gas outlet on the components. The processing process is complicated and hole blockage is prone to occur. If hole blockage occurs during the semiconductor process, it will affect the uniformity of the spray gas. Figure 8 and Fig.11As shown, in this embodiment, the gas spray assembly 404 adopts a porous material plate 404, which is made of powder sintering. The internal structure of the porous material plate is like a sponge, with many crisscrossing tiny channels and micropores evenly distributed on the surface. Since the porous material plate 404 is in contact with the lower surface of the block bar grid 416, each of the first gas flow channels formed by the gaps 420 between the adjacent block bar grids 416 and each of the second gas flow channels formed by the third grooves 421 are connected to the micropores on the porous material plate 404, and the reaction gas from the first gas flow channel and the second gas flow channel is sent into the reaction chamber 1 through the micropores on the porous material plate 404. In this embodiment, the porous material plate is used instead of the processed gas holes, which saves the complicated processing flow. Since the porous material plate is full of micropores, even if some of the micropores are blocked, it will not affect the overall uniformity, which well ensures the uniformity of gas distribution, thereby ensuring the uniformity of the substrate process and the product yield.

[0062] The present invention effectively improves the flow speed of the reaction gas in each gas distribution channel in the gas distribution plate, avoids the generation of vortexes when the gas flows in the gas channel, is conducive to the rapid discharge of the gas from the gas channel, improves the process efficiency, avoids the reaction gas remaining in the gas channel to generate particulate matter, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from mixing in advance before entering the reaction chamber to generate particulate matter, ensures that the reaction gas is evenly diffused to the surface of the substrate in the reaction chamber, ensures the uniformity of the substrate process, and improves the product yield.

[0063] It should be noted that, in the embodiments of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0064] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0065] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be obvious to those skilled in the art for various modifications and substitutions of the present invention. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A gas distribution device, which is arranged in a reaction chamber of a semiconductor processing device, characterized in that: The gas distribution device comprises: A gas distribution plate, wherein the gas distribution plate has a first gas distribution channel and a second gas distribution channel which are isolated and independent from each other, wherein the first gas distribution channel comprises a first inlet diffusion area, a plurality of first gas flow channels and a first outlet diffusion area, wherein each of the first gas flow channels comprises an inlet end and an outlet end, wherein the inlet ends of the plurality of first gas flow channels are connected to the first inlet diffusion area, and the outlet ends of the plurality of first gas flow channels are connected to the first outlet diffusion area, wherein the second gas distribution channel comprises a second inlet diffusion area, a plurality of second gas flow channels and a second outlet diffusion area, wherein each of the second gas flow channels comprises an inlet end and an outlet end, wherein the inlet ends of the plurality of second gas flow channels are connected to the second inlet diffusion area, and the outlet ends of the plurality of second gas flow channels are connected to the second outlet diffusion area; An air intake module, the air intake module comprising at least one first air intake channel and at least one second air intake channel, the first air intake channel being connected to the first inlet diffusion zone, the second air intake channel being connected to the second inlet diffusion zone, the air intake module being used to deliver the reaction gas into the gas distribution plate; A gas extraction module, the gas extraction module comprising at least one first gas extraction channel and at least one second gas extraction channel, the first gas extraction channel is connected to the first outlet diffusion area, the second gas extraction channel is connected to the second outlet diffusion area, the gas extraction module is used to discharge the reaction gas in the gas distribution plate; A gas spray assembly is communicated with the first gas distribution channel and the second gas distribution channel, and is used for delivering reaction gas into the reaction chamber.

2. The gas distribution device according to claim 1, characterized in that: The plurality of first air flow channels are parallel to each other, and the plurality of second air flow channels are parallel to each other.

3. The gas distribution device according to claim 1 or 2, characterized in that: The ventilation volume of each of the first air flow channels is the same, and the ventilation volume of each of the second air flow channels is the same.

4. The gas distribution device according to claim 3, characterized in that: The gas distribution plate comprises a cover plate, a first gas diffusion plate and a second gas diffusion plate which are stacked in layers; The upper surface of the first gas diffusion plate is provided with a plurality of first grooves, and a first arc groove and a second arc groove located at the periphery of the first groove, the first arc groove is connected to one end of the first groove, the second arc groove is connected to the other end of the first groove, the first groove and the lower surface of the cover plate form the first air flow channel, the first arc groove and the lower surface of the cover plate form the first inlet diffusion area, and the second arc groove and the lower surface of the cover plate form the first outlet diffusion area; A plurality of second grooves, and a third arc groove and a fourth arc groove located at the periphery of the second grooves are arranged on the upper surface of the second gas diffusion plate. The second grooves and the lower surface of the first gas diffusion plate form the second air flow channel. The third arc groove and the lower surface of the first gas diffusion plate form the second inlet diffusion area. The fourth arc groove and the lower surface of the first gas diffusion plate form the second outlet diffusion area.

5. The gas distribution device according to claim 4, characterized in that: The first arc groove and the second arc groove are interconnected to form a complete circular ring; the third arc groove and the fourth arc groove are interconnected to form a complete circular ring.

6. The gas distribution device according to claim 5, characterized in that The depth of the first groove is smaller than the thickness of the first gas diffusion plate, and the depth of the second groove is smaller than the thickness of the second gas diffusion plate.

7. The gas distribution device according to claim 5, characterized in that: The cross section of the first groove is rectangular or V-shaped, and the cross section of the second groove is rectangular or V-shaped.

8. The gas distribution device according to claim 4, characterized in that: The gas spray assembly comprises a plurality of first gas spray channels and a plurality of second gas spray channels; One end of the first gas spray channel is connected to the first gas flow channel, and the other end is located on the lower surface of the second gas diffusion plate; One end of the second gas spray channel is communicated with the second gas flow channel, and the other end is located on the lower surface of the second gas diffusion plate.

9. The gas distribution device according to claim 4, characterized in that: The gas distribution plate includes a first sealing assembly located between a lower surface of the cover plate and an upper surface of the first gas diffusion plate, and a second sealing assembly located between a lower surface of the first gas diffusion plate and an upper surface of the second gas diffusion plate.

10. The gas distribution device according to claim 3, characterized in that: The gas distribution plate comprises a plurality of spaced block bars, the upper surface of the block bars is covered with a top cover, and the lower surface of the block bars is in contact with the gas spray assembly; the gaps between adjacent block bars form a first gas flow channel in the first gas distribution channel; the lower surface of the block bars has a third groove, and the third groove forms a second gas flow channel in the second gas distribution channel; The gas distribution plate also includes a first gas separation plate and a second gas separation plate, the first gas separation plate and the second gas separation plate are respectively arranged at both ends of the block bar grid, a first inlet diffusion zone is formed between the upper surface of the first gas separation plate and the top cover, the first inlet diffusion zone is connected to the gap between the block bar grid, a second inlet diffusion zone is formed between the lower surface of the first gas separation plate and the gas spray assembly, the second inlet diffusion zone is connected to the third groove, a first outlet diffusion zone is formed between the upper surface of the second gas separation plate and the top cover, the first outlet diffusion zone is connected to the gap between the block bar grid, a second outlet diffusion zone is formed between the lower surface of the second gas separation plate and the gas spray assembly, the second outlet diffusion zone is connected to the third groove.

11. The gas distribution device according to claim 10, characterized in that The air intake module includes at least one concentric air inlet, and the concentric air inlet includes an inner air intake tube and an outer air intake tube which are arranged concentrically. The inner air intake tube is connected to the first gas separator plate, and the internal space of the inner air intake tube forms the first air intake channel, and the second air intake channel is formed between the inner air intake tube and the outer air intake tube; the air exhaust module includes at least one concentric air exhaust port, and the concentric air exhaust port includes an inner air exhaust tube and an outer air exhaust tube which are arranged concentrically. The inner air exhaust tube is connected to the second gas separator plate, and the internal space of the inner air exhaust tube forms the first air exhaust channel, and the second air exhaust channel is formed between the inner air exhaust tube and the outer air exhaust tube.

12. The gas distribution device according to claim 10, characterized in that The gas spray assembly comprises a porous material plate having a plurality of micropores, wherein the micropores are connected to the first gas flow channel and the second gas flow channel.

13. A semiconductor processing device, characterized in that: Include: Reaction chamber; The gas distribution device according to any one of claims 1 to 12, wherein the gas distribution device is arranged at the top of the reaction chamber; The base is arranged in the reaction chamber and is used for carrying the substrate.

14. The semiconductor processing equipment according to claim 13, characterized in that The first gas inlet channel is connected to an external first gas source, and the second gas inlet channel is connected to an external second gas source.

15. The semiconductor processing equipment according to claim 13, wherein: The first air extraction channel and the second air extraction channel are connected to an external air extraction device.

16. The semiconductor processing equipment according to claim 13, wherein: The semiconductor processing equipment is a deposition equipment or an etching equipment.

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