Heat dissipation structure and semiconductor packaging structure

Abstract

The invention relates to a heat dissipation structure and a semiconductor packaging structure. The heat dissipation structure comprises a heat dissipation plate and a plurality of turbulent flow columns arranged on the surface of the heat dissipation plate, and the multiple turbulent flow columns are arranged on the surface of the heat dissipation plate at intervals. In the first direction, the turbulent flow columns have projection patterns on the surface of the heat dissipation plate, and the projection patterns are diamond-like patterns formed by connecting line segments and arc lines; the first direction is perpendicular to the surface of the heat dissipation plate. The heat dissipation capability of the heat dissipation structure can be enhanced, so that the reliability of the semiconductor device is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a heat dissipation structure and a semiconductor packaging structure. Background Art

[0002] A power module is a combination of power electronic devices according to certain functions and then encapsulated into a module. A power module generates a lot of heat when working. As the temperature rises, the probability of failure of the power module will also increase significantly. Therefore, in order to maintain the stable operation of the power module, it is necessary to transfer the heat generated by the power module to the external environment or cooling medium through a heat dissipation structure to meet the requirements of the power module reliability index. The heat dissipation effect of the current power module heat dissipation structure needs to be improved. Summary of the invention

[0003] Based on this, the present application provides a heat dissipation structure and a semiconductor packaging structure, which can enhance the heat dissipation capability of the heat dissipation structure, thereby improving the reliability of semiconductor devices.

[0004] In a first aspect, the present application provides a heat dissipation structure, including a heat dissipation plate and a plurality of spoiler columns arranged on the surface of the heat dissipation plate, wherein the plurality of spoiler columns are arranged at intervals on the surface of the heat dissipation plate;

[0005] Along the first direction, the spoiler column has a projection pattern on the surface of the heat sink, and the projection pattern is a rhombus-like pattern composed of line segments and arcs; the first direction is perpendicular to the surface of the heat sink.

[0006] In one embodiment, the projection pattern is composed of a first arc, a first line segment, a second arc, a second line segment, a third arc, a third line segment, a fourth arc, and a fourth line segment connected end to end in sequence;

[0007] The first arc and the third arc are arranged opposite to each other along the second direction, and the second arc and the fourth arc are arranged opposite to each other along the third direction; the second direction is perpendicular to and coplanar with the third direction, and the first direction is perpendicular to the second direction and the third direction;

[0008] Among the first line segment, the second line segment, the third line segment, and the fourth line segment, at least two line segments have different lengths.

[0009] In one embodiment, the first arc, the second arc, the third arc and the fourth arc are all circular arcs, the first arc has a first radius R1, the second arc has a second radius R2, the third arc has a third radius R3, and the fourth arc has a fourth radius R4;

[0010] 0.3mm≤R1≤0.6mm, 0.3mm≤R2≤0.6mm, 0.3mm≤R3≤0.6mm, 0.3mm≤R4≤0.6mm.

[0011] In one of the embodiments, in the second direction, the maximum size of the projected figure is the first size, and in the third direction, the maximum size of the projected figure is the second size, and the first size is greater than the second size.

[0012] In one embodiment, the first size and the second size satisfy the following relationship:

[0013] 1mm≤S<L≤4mm;

[0014] Wherein, L is the first size and S is the second size.

[0015] In one embodiment, the spoiler column includes a first spoiler column and a second spoiler column, the first spoiler column is arranged on the surface of the heat sink to form a first spoiler column group extending along the second direction, the second spoiler column is arranged on the surface of the heat sink to form a second spoiler column group extending along the second direction, and along the third direction, the first spoiler column group and the second spoiler column group are arranged crosswise and at intervals;

[0016] Along the third direction, the first spoiler columns and the second spoiler columns are arranged alternately;

[0017] In the projection figure of the first spoiler column on the surface of the heat sink, the length of any one of the first line segment and the fourth line segment is less than the length of any one of the second line segment and the third line segment;

[0018] In the projection pattern of the second spoiler column on the surface of the heat sink, the length of any one of the first line segment and the fourth line segment is greater than the length of any one of the second line segment and the third line segment.

[0019] In one embodiment, there is a minimum distance d between adjacent first spoiler columns and second spoiler columns, and the distance d is 0.6 mm≤d≤1.2 mm.

[0020] In one embodiment, the axial extension direction of at least part of the spoiler pillars is inclined relative to the first direction.

[0021] In one embodiment, the projected shape is an axisymmetric shape with respect to the second direction.

[0022] In a second aspect, the present application further provides a semiconductor packaging structure, which includes the heat dissipation structure described in the first aspect.

[0023] When the above heat dissipation structure and semiconductor packaging structure are implemented, the heat generated by the semiconductor device can be transferred to the heat dissipation plate and the spoiler column, and most of the heat is taken away by the coolant, thereby realizing the cooling of the semiconductor device. Along the first direction, the projection figure formed by the spoiler column projected on the surface of the heat dissipation plate is a rhombus-like figure composed of line segments and arcs. This rhombus-like figure has smooth turns, and the overall structure of the spoiler column tends to be streamlined, so that the boundary layer formed at the position where the coolant contacts the spoiler column is relatively thin, the wake area formed at the tail of the spoiler column is relatively small, and the pressure drop of the coolant is also relatively small, thereby reducing the flow loss of the coolant while improving the spoiler effect, enhancing the heat dissipation capacity and heat exchange efficiency of the heat dissipation structure, and being conducive to improving the reliability of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] FIG. 1 is a top view of a heat dissipation structure provided in an embodiment of the present application.

[0025] FIG. 2 is a schematic diagram of a projection diagram of a spoiler column provided in an embodiment of the present application.

[0026] FIG. 3 is a schematic diagram of projection images of the first spoiler column and the second spoiler column provided in an embodiment of the present application.

[0027] FIG. 4 is a schematic diagram of the minimum distance between the first spoiler column and the second spoiler column provided in an embodiment of the present application.

[0028] FIG. 5 is a partial enlarged view of FIG. 1 .

[0029] Reference numerals

[0030] 1-heat dissipation structure; 10-heat dissipation plate; 11-spoiler column; 110-projection pattern; 1101-first arc line; 1102-first line segment; 1103-second arc line; 1104-second line segment; 1105-third arc line; 1106-third line segment; 1107-fourth arc line; 1108-fourth line segment; A-second direction; B-third direction; 111-first spoiler column; 112-second spoiler column. DETAILED DESCRIPTION

[0031] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0032] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0033] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0034] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0035] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0036] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0037] Silicon carbide (SiC) power module is a power module that uses wide-bandgap silicon carbide semiconductors as switches. It has the characteristics of high voltage resistance, high temperature resistance, and low on-resistance.

[0038] SiC power modules generate a lot of heat when working. They can exchange heat with the coolant through the pin fin heat dissipation structure, transfer the heat generated by the chip to the coolant, and take away most of the heat. The shape of the pin fin directly affects the flow of the coolant and the eddy current formed around the pin fin, thereby affecting the heat dissipation of the power module and the pressure drop of the coolant.

[0039] The Pin Fin heat dissipation structure mainly includes a heat dissipation substrate and a Pin Fin structure integrated on the heat dissipation substrate. In the current Pin Fin heat dissipation structure, the shape of the Pin Fin is mostly circular, elliptical, teardrop-shaped, etc. When the coolant flows through, the turbulence effect is general, the heat exchange effect is also general, and the cooling liquid pressure drop is large.

[0040] Fig. 1 is a top view of a heat dissipation structure provided in an embodiment of the present application. Fig. 2 is a schematic diagram of a projection image of a spoiler column provided in an embodiment of the present application.

[0041] As shown in Figures 1 and 2, an embodiment of the present application provides a heat dissipation structure 1, including a heat sink 10 and a plurality of spoiler columns 11 arranged on the surface of the heat sink 10, wherein the plurality of spoiler columns 11 are arranged at intervals on the surface of the heat sink 10; along a first direction, the spoiler columns 11 have a projection pattern 110 on the surface of the heat sink 10, and the projection pattern 110 is a rhombus-like pattern composed of line segments and arcs; the first direction is perpendicular to the surface of the heat sink 10.

[0042] As shown in Figures 1 and 2, the heat dissipation structure 1 provided in the embodiment of the present application can be arranged at the bottom of the semiconductor device to dissipate heat from the semiconductor device. In specific implementation, the heat generated by the semiconductor device can be transferred to the heat sink 10 and the spoiler column 11, and most of the heat is taken away by the coolant flowing through the heat sink 10 and the spoiler column 11, thereby achieving cooling of the semiconductor device. It can be seen from the composition structure and specific implementation process of the above-mentioned heat dissipation structure 1 that a plurality of spoiler columns 11 are arranged at intervals on the surface of the heat sink 10, which can increase the contact area between the coolant and the heat dissipation structure 1 and enhance the heat dissipation efficiency. Along the first direction, the projection figure 110 formed by the spoiler column 11 projected on the surface of the heat sink 10 is a rhombus-like figure composed of line segments and arcs. The rhombus-like figure has smooth transitions, and the overall structure of the spoiler column 11 tends to be streamlined, so that when the coolant flows through the spoiler column 11, the flow rate of the coolant is relatively uniform and the flow is relatively smooth. The boundary layer formed at the contact position between the coolant and the spoiler column 11 is relatively thin, and the wake area formed at the tail of the spoiler column 11 is relatively small. The pressure drop of the coolant is also relatively small, thereby improving the spoiler effect while reducing the flow loss of the coolant, enhancing the heat dissipation capacity and heat exchange efficiency of the heat dissipation structure 1, and being beneficial to improving the reliability of semiconductor devices.

[0043] As a possible implementation, as shown in FIG2 , the projection figure 110 is composed of a first arc 1101, a first line segment 1102, a second arc 1103, a second line segment 1104, a third arc 1105, a third line segment 1106, a fourth arc 1107 and a fourth line segment 1108 which are connected end to end in sequence; the first arc 1101 and the third arc 1105 are arranged relative to each other along a second direction A, and the second arc 1103 and the fourth arc 1107 are arranged relative to each other along a third direction B; the second direction A is perpendicular to and coplanar with the third direction B, and the first direction is perpendicular to the second direction A and the third direction B; among the first line segment 1102, the second line segment 1104, the third line segment 1106 and the fourth line segment 1108, the lengths of at least two line segments are different.

[0044] Based on this, as shown in Figure 2, in the projection figure 110, the first arc 1101, the first line segment 1102, the second arc 1103, the second line segment 1104, the third arc 1105, the third line segment 1106, the fourth arc 1107 and the fourth line segment 1108 are connected end to end in sequence to form a rhombus-like figure with arc corners. Among them, the first arc 1101, the second arc 1103, the third arc 1105 and the fourth arc 1107 constitute the four arc angles of the projection figure 110, and the first arc 1101 and the third arc 1105 are opposite to each other in the second direction A, and the second arc 1103 and the fourth arc 1107 are opposite to each other in the third direction B; relative to the rhombus figure with sharp angles, this rhombus-like figure with arc angles makes the surface of the spoiler column 11 smoother, the overall structure is smoother, and tends to be streamlined, so that the coolant mainly exhibits laminar flow when flowing on the surface of the spoiler column 11, the resistance encountered is relatively small, and the kinetic energy loss of the coolant is relatively small, which can further improve the flow efficiency of the coolant, further enhance the heat exchange performance of the heat dissipation structure 1, and have a better comprehensive effect in terms of spoiler and heat exchange. Among them, the first line segment 1102, the second line segment 1104, the third line segment 1106 and the fourth line segment 1108 constitute the four edges of the projection figure 110, and the lengths of at least two of the line segments are different, that is, the projection figure 110 is not a regular rhombus figure, but a rhombus-like figure whose overall shape is close to a rhombus, so that when the coolant flows through the spoiler column 11, the wake area formed at the tail of the spoiler column 11 is relatively small, further reducing the flow loss of the coolant, and further enhancing the heat dissipation performance of the heat dissipation structure 1, which is conducive to further improving the reliability of the semiconductor device. In addition, the spoiler column 11 with a rounded angle is easier to process and can reduce production costs.

[0045] In some examples, as shown in Fig. 2, the first arc 1101, the second arc 1103, the third arc 1105 and the fourth arc 1107 are all arcs, so that the projection figure 110 is a rhombus-like figure with an arc angle. Further, the arc can be tangent to the two adjacent edges, so that the overall structure of the spoiler column 11 is smoother, and the boundary layer formed on the surface of the spoiler column 11 is further reduced, thereby further reducing the flow loss of the coolant and enhancing the heat exchange performance of the coolant.

[0046] Further, as shown in FIG2 , the first arc 1101 has a first radius R1, the second arc 1103 has a second radius R2, the third arc 1105 has a third radius R3, and the fourth arc 1107 has a fourth radius R4; 0.3mm≤R1≤0.6mm, 0.3mm≤R2≤0.6mm, 0.3mm≤R3≤0.6mm, 0.3mm≤R4≤0.6mm.

[0047] Based on this, as shown in FIG2 , the radius size of the four arc angles of the projection figure 110 can be limited to between 0.3 mm and 0.6 mm, so that the projection figure 110 can be formed into a rhombus-like figure with arc angles, so that the surface of the spoiler column 11 structure is smooth and regular, and the overall design is more streamlined. If the radius of the four arc angles of the projection figure 110 is less than 0.3 mm, when processing the spoiler column 11, the projection figure 110 of the spoiler column 11 is more inclined to a rhombus with edges and corners, and the edges and corners can increase the resistance of the coolant during the movement of the coolant, thereby increasing the pressure drop. Furthermore, the increase in pressure drop will cause the working pressure of the system to increase. At the same time, the increase in flow resistance will reduce the flow rate of the coolant, thereby affecting the heat exchange capacity of the coolant. If the radius of the four arc corners of the projection figure 110 is greater than 0.6 mm, other dimensions need to be increased to make the projection figure 110 a diamond-like figure with arc corners, and to make the structural surface of the spoiler column 11 smooth and regular, and the overall design tends to be streamlined. A spoiler column 11 that is too large will cause the flow velocity of the coolant to be reduced too much, affecting the heat dissipation capacity and heat dissipation efficiency of the heat dissipation structure 1.

[0048] Exemplarily, the first radius R1 of the first arc 1101 can be 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm or 0.6mm, etc., the second radius R2 of the second arc 1103 can be 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm or 0.6mm, etc., the third radius R3 of the third arc 1105 can be 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm or 0.6mm, etc., and the fourth radius R4 of the fourth arc 1107 can be 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, 0.55mm or 0.6mm, etc. These are just examples and are not specifically limited.

[0049] Exemplarily, in the heat dissipation structure 1 , the coolant may flow along the second direction A.

[0050] As a possible implementation, as shown in FIG2 , the projection pattern 110 is an axisymmetric pattern about the second direction A. Based on this, the spoiler column 11 is also a symmetrical structure as a whole, which can reduce the difficulty of processing the spoiler column 11 and thus reduce the production cost of the heat dissipation structure 1 .

[0051] Exemplarily, when the projection figure 110 is an axisymmetric figure about the second direction A, the second radius R2 of the second arc 1103 may be equal to the fourth radius R4 of the fourth arc 1107 , further reducing the difficulty of processing the spoiler column 11 .

[0052] In some examples, when the projection figure 110 is an axially symmetrical figure about the second direction A, the four edges of the projection figure 110 can be divided into two groups of edges. The two edges included in the same group of edges are opposite to each other along the third direction B and have the same length, further reducing the processing difficulty of the spoiler column 11.

[0053] Exemplarily, the length of the first line segment 1102 may be equal to the length of the fourth line segment 1108 , and the length of the second line segment 1104 may be equal to the length of the third line segment 1106 .

[0054] As a possible implementation, as shown in FIG. 2 , in the second direction A, the maximum size of the projection pattern 110 is the first size, and in the third direction B, the maximum size of the projection pattern 110 is the second size, and the first size is greater than the second size.

[0055] Based on this, as shown in FIG. 2 , the projection pattern 110 may be a rhombus-shaped pattern having a longer dimension in the second direction A and a shorter dimension in the third direction B. At this time, two of the four edges of the projection pattern 110 are shorter, and the remaining two are longer. If the two edges with a longer length are located at the tail of the projection pattern 110, when the coolant flows along the second direction A, the wake area formed near the two edges with a longer length is smaller, and the boundary layer formed on the surface of the spoiler column 11 is also thinner, which reduces the flow loss of the coolant, thereby further enhancing the heat exchange efficiency of the coolant, further improving the heat dissipation capacity and heat dissipation efficiency of the heat dissipation structure 1, and is conducive to further improving the reliability of the semiconductor device.

[0056] For example, as shown in FIG. 2 , taking the first line segment 1102 and the fourth line segment 1108 in the projection figure 110 as being shorter and the second line segment 1104 and the third line segment 1106 as being longer, when the coolant flows from the first arc 1101 to the third arc 1105 in the second direction A, the coolant first contacts the first arc 1101, then flows from the first arc 1101 through the first line segment 1102 to the second arc 1103, and flows from the first arc 1101 through the fourth line segment 1108 to the fourth arc 1107. Since the first line segment 1102 and the fourth line segment 1108 are in an upward trend, the pressure of the coolant increases when it flows on the first line segment 1102 and the fourth line segment 1108. The speed decreases; then it flows from the second arc 1103 through the second line segment 1104 to the third arc 1105, and moves from the fourth arc 1107 through the third line segment 1106 to the third arc 1105. Since the second line segment 1104 and the third line segment 1106 are in a downward trend, the pressure of the coolant decreases and the speed increases when flowing on the second line segment 1104 and the third line segment 1106, so that the boundary layer formed on the surface of the spoiler column 11 is thinner, and the wake area formed at the third arc 1105 is also smaller, which further reduces the flow loss of the coolant, further enhances the heat exchange efficiency of the coolant, further improves the heat dissipation capacity and heat dissipation efficiency of the heat dissipation structure 1, and is conducive to further improving the reliability of the semiconductor device.

[0057] Exemplarily, the third radius R3 of the third arc 1105 can be between 0.3 mm and 0.6 mm. If the third radius R3 is small, bending and other problems are likely to occur at the tail when processing the spoiler column 11; and because the wake area is formed near the third arc 1105, the third radius R3 is small, the volume of the spoiler column 11 is also small, and the spoiler effect generated when the coolant flows through the spoiler column 11 is poor, resulting in poor heat dissipation performance of the heat dissipation structure 1. If the third radius R3 is large, the wake area formed at the tail of the spoiler column 11 is large, the pressure drop of the coolant is large, the energy loss is large, and the heat exchange efficiency is low, which also leads to poor heat dissipation performance of the heat dissipation structure 1.

[0058] For example, in the projection pattern 110 , the first radius R1 of the first arc 1101 and the third radius R3 of the third arc 1105 may be the same or different, and this embodiment of the present application is not limited to this.

[0059] Exemplarily, the angle of the third arc 1105 can be between 0 and 60 degrees. If the angle of the third arc 1105 is too large, the second dimension of the projection pattern 110 is too long, which may cause excessive pressure drop of the coolant and more energy loss, thus affecting the heat exchange efficiency of the coolant.

[0060] For example, the included angle of the third arc 1105 may be 10°, 20°, 30°, 40°, 50° or 60°, etc. These are merely examples and are not specifically limited.

[0061] In some examples, the first size and the second size satisfy the following relationship: 1 mm≤S<L≤4 mm; where L is the first size and S is the second size.

[0062] Based on this, the second dimension S of the projection pattern 110 in the third direction B is smaller than the first dimension L of the projection pattern 110 in the second direction A, which can avoid excessive pressure drop of the coolant. If the second dimension S is too large, the pressure drop of the coolant is large and the flow loss is too large. If the second dimension S is too small, problems are likely to occur when processing the spoiler column 11, and if the second dimension S and the first dimension L are too small, the overall volume of the spoiler column 11 is small, the spoiler effect is poor, and the heat dissipation performance of the heat dissipation structure 1 is poor. If the first dimension L is too large, the overall volume of the spoiler column 11 is too large, the resistance encountered by the coolant during flow is large, the pressure drop of the coolant is too large, and the flow loss is too large.

[0063] Further, the first dimension L can be the sum of the dimension l' in Figure 1, the first radius R1 of the first arc 1101 and the third radius R3 of the third arc 1105, that is, L=l'+R1+R3; the second dimension S can be the sum of the dimension s' in Figure 1, the second radius R2 of the second arc 1103 and the fourth radius R4 of the fourth arc 1107, that is, S=s'+R2+R4.

[0064] Exemplarily, the second size S can be 1mm, 1.5mm, 2mm, 2.5mm, 3mm or 3.5mm, etc., and the first size L can be 1.5mm, 2mm, 2.5mm, 3mm, 3.5mm or 4mm, etc. These are just examples and are not specifically limited.

[0065] Fig. 3 is a schematic diagram of the projection diagram of the first spoiler column and the second spoiler column provided in the embodiment of the present application. Fig. 4 is a schematic diagram of the minimum spacing between the first spoiler column and the second spoiler column provided in the embodiment of the present application. Fig. 5 is a partial enlarged view of Fig. 1.

[0066] As a possible implementation, as shown in FIGS. 2 to 5 , the spoiler column 11 includes a first spoiler column 111 and a second spoiler column 112. The first spoiler column 111 is arranged on the surface of the heat sink 10 to form a first spoiler column group extending along the second direction A, and the second spoiler column 112 is arranged on the surface of the heat sink 10 to form a second spoiler column group extending along the second direction A. Along the third direction B, the first spoiler column 111 group and the second spoiler column 112 group are arranged crosswise and at intervals; along the third direction B, the first spoiler column 111 and the second spoiler column 112 group are arranged crosswise and at intervals. The flow columns 112 are arranged in a staggered manner; in the projection pattern 110 of the first spoiler column 111 on the surface of the heat sink 10, the length of any one of the first line segment 1102 and the fourth line segment 1108 is less than the length of any one of the second line segment 1104 and the third line segment 1106; in the projection pattern 110 of the second spoiler column 112 on the surface of the heat sink 10, the length of any one of the first line segment 1102 and the fourth line segment 1108 is greater than the length of any one of the second line segment 1104 and the third line segment 1106.

[0067] Based on this, as shown in Figures 2 to 5, the spoiler column 11 can be divided into a first spoiler column 111 and a second spoiler column 112, and the spoiler columns 111 and the second spoiler columns 112 are arranged at intervals on the surface of the heat sink 10 in a staggered form. Among them, the length relationship of the four edges of the first spoiler column 111 in the projection pattern 110 on the surface of the heat sink 10 is opposite to the length relationship of the four edges of the second spoiler column 112 in the projection pattern 110 on the surface of the heat sink 10, that is, the first spoiler column 111 and the second spoiler column 112 are symmetrical to each other about the third direction B, or the structure of the second spoiler column 112 is the structure obtained by rotating the first spoiler column 111 by 180°, so that the spoiler columns 11 are arranged in an inverted row on the surface of the heat sink 10. This arrangement method staggers the positions of the first spoiler column 111 and the second spoiler column 112, and the gaps between the spoiler columns 11 are relatively tight, which further increases the heat dissipation area, thereby further improving the heat dissipation effect of the heat dissipation structure 1; at the same time, if the spoiler columns 11 are combined with the first spoiler column 111 and the second spoiler column 112 and arranged in an inverted row, the flow rate of the coolant can be relatively stable, tending to flow at a uniform speed, and the flow is smoother, the pressure drop of the coolant is smaller, and the flow loss is also less.

[0068] Further, as shown in Figures 2 to 5, in the projection figure 110 of the first spoiler column 111 on the surface of the heat sink 10, the lengths of the first line segment 1102 and the fourth line segment 1108 are both smaller than the lengths of the second line segment 1104 and the third line segment 1106; in the projection figure 110 of the second spoiler column 112 on the surface of the heat sink 10, the lengths of the first line segment 1102 and the fourth line segment 1108 are both larger than the lengths of the second line segment 1104 and the third line segment 1106.

[0069] In some examples, as shown in FIG. 4 , there is a minimum distance d between adjacent first spoiler columns 111 and second spoiler columns 112 , and the distance d is 0.6 mm≤d≤1.2 mm.

[0070] Based on this, as shown in Figure 4, the minimum spacing between the first spoiler columns 111 and the second spoiler columns 112 arranged in an alternating manner can be between 0.6mm and 1.2mm, which can not only make the gap between the spoiler columns 11 relatively tight, increase the contact area with the coolant, and enhance the heat dissipation effect of the heat dissipation structure 1, but also make the flow of the coolant relatively smooth and reduce the flow loss of the coolant.

[0071] Exemplarily, as shown in FIG. 4 , the minimum spacing d between adjacent first spoiler columns 111 and second spoiler columns 112 refers to the shortest distance between two adjacent edges of adjacent first spoiler columns 111 and second spoiler columns 112 .

[0072] For example, the minimum distance d between adjacent first spoiler columns 111 and second spoiler columns 112 may be 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 1.1 mm or 1.2 mm, etc., which are merely examples and are not specifically limited.

[0073] As a possible implementation manner, the axial extension direction of at least part of the spoiler pillars 11 is inclined relative to the first direction.

[0074] Based on this, the spoiler column 11 can be tilted relative to the heat sink 10, further increasing the contact area between the coolant and the spoiler column 11, and at the same time increasing the turbulence of the coolant flow, improving the heat exchange effect of the coolant, and thus improving the heat dissipation capacity and heat dissipation effect of the heat dissipation structure 1. For example, the end of the spoiler column 11 away from the heat sink 10 can be tilted toward the inlet position of the coolant in the heat sink 10, so that the coolant can be closer to the heat sink 10 with a higher temperature when flowing, further improving the heat dissipation capacity and heat dissipation effect of the heat dissipation structure 1.

[0075] Exemplarily, the material of the spoiler column 11 may be one or more of copper, aluminum, silver, etc. For example, the material of the spoiler column 11 may be copper, which is only used as an example and is not specifically limited.

[0076] The present application also provides a semiconductor packaging structure, which includes the heat dissipation structure 1 described in the above embodiment.

[0077] Compared with the prior art, the beneficial effects of the semiconductor packaging structure are the same as the beneficial effects of the heat dissipation structure 1 described in any of the above embodiments, and will not be described in detail here.

[0078] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0079] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A heat dissipation structure, characterized in that: It comprises a heat sink and a plurality of spoiler columns arranged on the surface of the heat sink, wherein the plurality of spoiler columns are arranged at intervals on the surface of the heat sink; Along the first direction, the spoiler column has a projection pattern on the surface of the heat sink, and the projection pattern is a rhombus-like pattern composed of line segments and arcs; The first direction is perpendicular to the surface of the heat sink.

2. The heat dissipation structure according to claim 1, characterized in that: The projection figure is composed of a first arc, a first line segment, a second arc, a second line segment, a third arc, a third line segment, a fourth arc and a fourth line segment which are connected end to end in sequence; The first arc and the third arc are arranged opposite to each other along the second direction, and the second arc and the fourth arc are arranged opposite to each other along the third direction; the second direction is perpendicular to and coplanar with the third direction, and the first direction is perpendicular to the second direction and the third direction; At least two of the first line segment, the second line segment, the third line segment, and the fourth line segment have different lengths.

3. The heat dissipation structure according to claim 2, characterized in that: The first arc, the second arc, the third arc and the fourth arc are all circular arcs, the first arc has a first radius R1, the second arc has a second radius R2, the third arc has a third radius R3, and the fourth arc has a fourth radius R4; 0.3mm≤R1≤0.6mm, 0.3mm≤R2≤0.6mm, 0.3mm≤R3≤0.6mm, 0.3mm≤R4≤0.6mm.

4. The heat dissipation structure according to claim 2, characterized in that: In the second direction, the maximum size of the projected figure is a first size, and in the third direction, the maximum size of the projected figure is a second size, and the first size is greater than the second size.

5. The heat dissipation structure according to claim 4, characterized in that: The first size and the second size satisfy the following relationship: 1mm≤S<L≤4mm; Wherein, L is the first size and S is the second size.

6. The heat dissipation structure according to any one of claims 2 to 5, characterized in that: The spoiler column comprises a first spoiler column and a second spoiler column, the first spoiler column is arranged on the surface of the heat sink to form a first spoiler column group extending along the second direction, the second spoiler column is arranged on the surface of the heat sink to form a second spoiler column group extending along the second direction, and along the third direction, the first spoiler column group and the second spoiler column group are arranged crosswise and at intervals; Along the third direction, the first spoiler columns and the second spoiler columns are arranged alternately; In a projection pattern of the first spoiler column on the surface of the heat sink, the length of any one of the first line segment and the fourth line segment is less than the length of any one of the second line segment and the third line segment; In a projection pattern of the second spoiler column on the surface of the heat sink, the length of any one of the first line segment and the fourth line segment is greater than the length of any one of the second line segment and the third line segment.

7. The heat dissipation structure according to claim 6, characterized in that: There is a minimum distance d between adjacent first spoiler columns and second spoiler columns, and the interval is 0.6 mm≤d≤1.2 mm.

8. The heat dissipation structure according to any one of claims 1 to 5, characterized in that: The axial extension direction of at least part of the spoiler columns is inclined relative to the first direction.

9. The heat dissipation structure according to any one of claims 2 to 5, characterized in that: The projection figure is an axisymmetric figure with respect to the second direction.

10. A semiconductor packaging structure, characterized in that: The semiconductor packaging structure comprises the heat dissipation structure according to any one of claims 1 to 9.

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