Glass plate cleaning method

Abstract

The cleaning method of the glass plate comprises the steps that a first cleaning agent is adopted for conducting first ultrasonic cleaning on the glass plate, the first cleaning temperature is set for the first ultrasonic cleaning, and the first cleaning agent comprises sodium hydroxide, sodium carbonate and deionized water; second ultrasonic cleaning is conducted on the glass plate through a second cleaning agent, the second cleaning temperature is set to be higher than the first cleaning temperature and not larger than 80 DEG C in the first ultrasonic cleaning process, and the second cleaning agent comprises citric acid, propylene glycol monomethyl ether, fatty alcohol-polyoxyethylene ether AEO-9, isomeric alcohol polyoxyethylene ether TO-7 and deionized water; the glass plate is placed in a spraying tank to be subjected to drip washing; and drying the glass plate. The method is easy to operate and low in cost, the cleaning effect is effectively improved, the semiconductor product is prevented from being secondarily polluted, and meanwhile the service life of the glass plate is prolonged.

Description

Technical Field

[0001] The invention relates to the field of glass manufacturing, and in particular to a method for cleaning a glass plate. Background Art

[0002] In the field of semiconductor processing, glass carriers are often used as carrier plates or fixtures to support semiconductor products for processing. After processing, dirt, such as adhesives, often remains on the surface of the glass plate. Therefore, it is necessary to clean the glass plate to extend its service life. Due to the structural characteristics of the glass plate, nano-scale dirt and water stains that are invisible to the naked eye are easily generated on the glass edges and glass gaps after cleaning with ordinary detergents, resulting in secondary contamination of semiconductor products.

[0003] Therefore, it is urgent to provide an improved glass plate cleaning method to overcome the above defects. Summary of the invention

[0004] The object of the present invention is to provide an improved glass plate cleaning method, which is simple to operate, low in cost, effectively improves the cleaning effect, prevents semiconductor products from being contaminated by secondary pollution, and prolongs the service life of the glass plate.

[0005] To achieve the above object, the glass plate cleaning method of the present invention comprises the following steps:

[0006] Using a first cleaning agent to perform a first ultrasonic cleaning on the glass plate, wherein the first ultrasonic cleaning is set at a first cleaning temperature, and the first cleaning agent includes sodium hydroxide, sodium carbonate, and deionized water;

[0007] Performing a second ultrasonic cleaning on the glass plate with a second cleaning agent, wherein the first ultrasonic cleaning is set at a second cleaning temperature that is higher than the first cleaning temperature and not greater than 80° C., and the second cleaning agent comprises citric acid, propylene glycol methyl ether, fatty alcohol polyoxyethylene ether, isomeric alcohol polyoxyethylene ether, and deionized water;

[0008] placing the glass plate in a spray tank for washing; and

[0009] The glass plate was dried.

[0010] Compared with the prior art, the present invention first uses a specific first cleaning agent to perform a first ultrasonic cleaning on the glass plate, and then uses a specific second cleaning agent to perform a second ultrasonic cleaning on the glass plate, wherein the second cleaning temperature in the second ultrasonic cleaning is greater than the first cleaning temperature in the first ultrasonic cleaning, and the second cleaning temperature is controlled to be no higher than 80°C, which has the advantage of making the effective components in the second cleaning agent fully play their role and improving the cleaning effect. Specifically, the first cleaning agent includes sodium hydroxide, sodium carbonate and deionized water, and the glass cup is pre-cleaned. The second cleaning agent includes citric acid, propylene glycol methyl ether, fatty alcohol polyoxyethylene ether, isomeric alcohol polyoxyethylene ether and deionized water, and ultrasonic cleaning is performed at a suitable temperature, and the effect is very excellent. Then, the glass plate is rinsed in a spray tank to fully clean the cleaning agent, and finally a drying step is performed. The cleaning method is simple to operate and low in cost. It can effectively clean nano-scale dirt and water stains that are invisible to the naked eye in the edges and gaps of the glass plate, has a good cleaning effect, prevents semiconductor products from being contaminated secondary, and prolongs the service life of the glass plate.

[0011] As a preferred embodiment, the first cleaning temperature is 25-30°C, and the second cleaning temperature is 60-80°C.

[0012] As a preferred embodiment, the method further includes controlling the ultrasonic current in the first ultrasonic cleaning to be greater than the ultrasonic current in the second ultrasonic cleaning.

[0013] As a preferred embodiment, the ultrasonic current in the first ultrasonic cleaning is 5-6A, and the ultrasonic current in the second ultrasonic cleaning is 2-3A.

[0014] As a preferred embodiment, the first cleaning agent includes, by mass percentage, 15% sodium hydroxide, 5% sodium carbonate and 80% deionized water.

[0015] As a preferred embodiment, the second cleaning agent includes, by mass percentage, 7% citric acid, 28% propylene glycol methyl ether, 2% fatty alcohol polyoxyethylene ether AEO-9, 3% isomeric alcohol polyoxyethylene ether TO-7 and 60% deionized water.

[0016] As a preferred embodiment, after the spraying and before the drying, the glass plate is ultrasonically rinsed with pure water, the rinsing temperature is 50-60° C., and the ultrasonic current is 5-6A.

[0017] As a preferred embodiment, the drying includes air drying and baking.

[0018] As a preferred embodiment, the air drying includes blowing the glass plate dry with nitrogen at room temperature.

[0019] As a preferred embodiment, the baking comprises: placing the glass plate after blast drying in an oven for baking at a temperature of 150-180°C. DETAILED DESCRIPTION

[0020] The glass plate cleaning method of the present invention is further described below in conjunction with the embodiments, but the present invention is not limited thereby. The method of the present invention is intended to provide a glass plate cleaning method that is simple to operate, low in cost, effectively improves the cleaning effect, prevents the semiconductor product from being contaminated by secondary pollution, and prolongs the service life of the glass plate.

[0021] The glass plate cleaning method of the present invention comprises the following steps:

[0022] Using a first cleaning agent to perform a first ultrasonic cleaning on the glass plate, wherein the first ultrasonic cleaning is set at a first cleaning temperature, and the first cleaning agent includes sodium hydroxide, sodium carbonate, and deionized water;

[0023] Performing a second ultrasonic cleaning on the glass plate with a second cleaning agent, wherein the first ultrasonic cleaning is set at a second cleaning temperature that is higher than the first cleaning temperature and not greater than 80° C., and the second cleaning agent includes citric acid, propylene glycol methyl ether, fatty alcohol polyoxyethylene ether (such as AEO-9), isomeric alcohol polyoxyethylene ether (such as TO-7) and deionized water;

[0024] placing the glass plate in a spray tank for washing; and

[0025] The glass plate was dried.

[0026] The present invention first uses a specific first cleaning agent to perform a first ultrasonic cleaning on the glass plate, and then uses a specific second cleaning agent to perform a second ultrasonic cleaning on the glass plate, wherein the second cleaning temperature in the second ultrasonic cleaning is greater than the first cleaning temperature in the first ultrasonic cleaning, and the second cleaning temperature is controlled to be no higher than 80°C, which has the advantage of making the effective components in the second cleaning agent fully play their role and improving the cleaning effect. Specifically, the first cleaning agent includes sodium hydroxide, sodium carbonate and deionized water, and the glass cup is pre-cleaned. The second cleaning agent includes citric acid, propylene glycol methyl ether, fatty alcohol polyoxyethylene ether, isomeric alcohol polyoxyethylene ether and deionized water, and ultrasonic cleaning is performed at a suitable temperature, and the effect is very excellent. Then, the glass plate is rinsed in a spray tank to fully clean the cleaning agent, and finally a drying step is performed. The cleaning method is simple to operate and low in cost. It can effectively clean nano-scale dirt and water stains that are invisible to the naked eye in the edges of the glass plate and the gaps of the glass. It has a good cleaning effect, prevents semiconductor products from being contaminated secondary, and prolongs the service life of the glass plate.

[0027] Specifically, as an embodiment, first prepare a first cleaning agent and a second cleaning agent. Preferably, in terms of mass percentage, the first cleaning agent includes 15% sodium hydroxide, 5% sodium carbonate and 80% deionized water. In the first ultrasonic cleaning, the first cleaning agent and pure water are mixed into a cleaning liquid in a weight ratio of 1:25, and the entire glass plate is ultrasonically cleaned. The first cleaning temperature is 25-30°C, which is particularly good for the cleaning effect of the first cleaning agent; the cleaning time is 20-30 minutes, and the ultrasonic current is 5-6 amperes. The first ultrasonic cleaning of the first cleaning agent serves as a pretreatment for the entire cleaning process, in preparation for the subsequent second ultrasonic cleaning.

[0028] Preferably, in terms of mass percentage, the second cleaning agent includes 7% citric acid, 28% propylene glycol methyl ether, 2% fatty alcohol polyoxyethylene ether, 3% isomeric alcohol polyoxyethylene ether and 60% deionized water. In the second ultrasonic cleaning, the second cleaning agent and pure water are mixed into a cleaning liquid in a weight ratio of 1:15 to clean the entire glass plate. The second cleaning temperature is higher than the first cleaning temperature of the first ultrasonic cleaning and is not greater than 80°C, for example, 60-80°C is particularly preferred. At this temperature, the second cleaning agent can exert the maximum cleaning effect to obtain an excellent cleaning effect. Preferably, the cleaning time of the second ultrasonic cleaning is 20-30 minutes, and the ultrasonic current is smaller than the ultrasonic current of the first ultrasonic cleaning, preferably 2-3 amperes. After the second ultrasonic cleaning of the second cleaning agent, the glass plate is fully cleaned and the stains are effectively removed.

[0029] Next, the glass plate was placed in a spray tank and rinsed with pure water, wherein the rinsing time was 40-60 minutes and the rinsing flow rate was 15 L / min.

[0030] In order to clean the cleaning agent and further clean the glass plate, the glass plate is placed in an ultrasonic device for pure water rinsing. The rinsing time is 20-40 minutes, the temperature is 50-60°C, and the ultrasonic current is preferably 5 amperes.

[0031] Finally, the glass plate is dried. Specifically, the drying includes air drying and baking. Preferably, air drying uses nitrogen at room temperature, such as using a nitrogen gun to blow the surface, edges and gaps of the glass plate, so as to quickly blow away water droplets and leave no water marks on the surface of the glass plate. Finally, the air-dried glass plate is placed in an oven for baking, wherein the baking temperature is 150-180°C and the baking time is 30-50 minutes.

[0032] Thus, the glass plate is effectively cleaned by the cleaning method of the present invention. The cleaning method is simple to operate and low in cost. It can effectively clean nano-scale dirt and water stains that are invisible to the naked eye on the edge of the glass plate and in the gaps of the glass. It has a good cleaning effect, prevents semiconductor products from being contaminated secondary, and prolongs the service life of the glass plate.

[0033] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for cleaning a glass plate, characterized in that: The following steps are involved: Using a first cleaning agent to perform a first ultrasonic cleaning on the glass plate, wherein the first ultrasonic cleaning is set at a first cleaning temperature, and the first cleaning agent includes sodium hydroxide, sodium carbonate, and deionized water; Performing a second ultrasonic cleaning on the glass plate with a second cleaning agent, wherein the first ultrasonic cleaning is set at a second cleaning temperature that is higher than the first cleaning temperature and not greater than 80° C., and the second cleaning agent comprises citric acid, propylene glycol methyl ether, fatty alcohol polyoxyethylene ether, isomeric alcohol polyoxyethylene ether, and deionized water; placing the glass plate in a spray tank for washing; and The glass plate was dried.

2. The glass plate cleaning method according to claim 1, wherein: The first cleaning temperature is 25-30°C, and the second cleaning temperature is 60-80°C.

3. The glass plate cleaning method according to claim 1, wherein: The method also includes controlling the ultrasonic current in the first ultrasonic cleaning to be greater than the ultrasonic current in the second ultrasonic cleaning.

4. The glass plate cleaning method according to claim 3, wherein: The ultrasonic current in the first ultrasonic cleaning is 5-6A, and the ultrasonic current in the second ultrasonic cleaning is 2-3A.

5. The glass plate cleaning method according to claim 1, wherein: In terms of mass percentage, the first cleaning agent includes 15% sodium hydroxide, 5% sodium carbonate and 80% deionized water.

6. The glass plate cleaning method according to claim 1, wherein: In terms of mass percentage, the second cleaning agent includes 7% citric acid, 28% propylene glycol methyl ether, 2% fatty alcohol polyoxyethylene ether, 3% isomeric alcohol polyoxyethylene ether and 60% deionized water.

7. The glass plate cleaning method according to claim 1, wherein: After the spraying and before the drying, the glass plate is ultrasonically rinsed with pure water, the rinsing temperature is 50-60° C., and the ultrasonic current is 5-6A.

8. The glass plate cleaning method according to claim 1, wherein: The drying includes air drying and baking.

9. The glass plate cleaning method according to claim 8, wherein: The air-blast drying includes blowing the glass plate dry with nitrogen at room temperature.

10. The glass plate cleaning method according to claim 8, wherein: The baking comprises: placing the glass plate after blast drying in an oven and baking at a temperature of 150-180°C.