Surface coating method for clamp

Abstract

The surface coating method of the clamp comprises the following steps: in a vacuum chamber, carrying out ion beam etching on the surface of the clamp so as to clean the surface of the clamp; a carbon layer is formed on the surface of the clamp through sputtering; and depositing and forming a diamond-like carbon protection layer on the carbon layer. According to the method, the hardness of the surface of the clamp can be improved, the semiconductor element is not damaged, the treated surface of the clamp is smooth and compact, chippings are not prone to being generated to form dust, and therefore the performance and subsequent use of the semiconductor element are guaranteed.

Description

Technical Field

[0001] The invention relates to the field of film coating, and in particular to a surface coating method for a fixture. Background Art

[0002] Semiconductor components are usually carried by fixtures and go through a series of processing steps. Semiconductor components need to be processed in a dust-free environment, which requires strict control of the amount of dust in each production link. During the manufacturing process of the fixture, the problem that often needs to be considered is that the hardness of the fixture should be lower than the semiconductor material itself to avoid scratching the semiconductor product, but the surface of the fixture made of such material is usually prone to debris, thus forming dust, causing pollution to the semiconductor product, thus affecting the performance of the semiconductor component and subsequent use.

[0003] Therefore, it is necessary to provide a surface coating method for a fixture to overcome the above defects. Summary of the invention

[0004] The purpose of the present invention is to provide an improved surface coating method for a fixture, which improves the hardness of the fixture surface without causing damage to the semiconductor element. The surface of the fixture after treatment is smooth and dense, and it is not easy to generate debris and form dust, thereby ensuring the performance of the semiconductor element and its subsequent use.

[0005] To achieve the above object, the surface coating method of the fixture of the present invention comprises the following steps:

[0006] In the vacuum chamber, ion beam etching is performed on the surface of the fixture to clean the surface of the fixture;

[0007] sputtering to form a carbon layer on a surface of the jig; and

[0008] A diamond-like carbon protective layer is deposited on the carbon layer.

[0009] Compared with the prior art, the present invention first cleans the surface of the fixture by ion beam etching in a vacuum chamber to facilitate subsequent coating; then, a carbon layer and a diamond-like carbon protective layer are sequentially sputtered and deposited on the surface of the fixture. The diamond-like carbon protective layer, as the outermost layer of the fixture, has a suitable hardness, is smooth and dense, and is not easy to break and produce debris to form dust pollution, thereby ensuring the performance of the semiconductor element and subsequent use; moreover, the carbon layer serves as a transition layer between the diamond-like carbon protective layer and the fixture surface, making the diamond-like carbon protective layer more solid and not easy to peel off. Furthermore, the method of the present invention is very simple, easy to operate, and low in cost.

[0010] Preferably, the ion beam etching is performed using argon plasma, argon-oxygen mixed gas, or argon-ethane mixed gas.

[0011] Preferably, the step of forming the carbon layer comprises: controlling the vacuum degree of the vacuum chamber to be 2.4×10 -2 Pa to 2.8×10 -2 Pa.

[0012] Preferably, the step of forming the carbon layer further includes: controlling the ion source power to be 2.0-2.5 kW, the workpiece negative bias voltage to be 100 V-150 V, turning on the sputtering target, and the sputtering target power to be 1.5-2.0 kW.

[0013] Preferably, the step of forming the carbon layer includes: controlling the deposition time of the carbon layer to be 20-25 minutes and the deposition rate to be 2.5-3.0 angstroms / second.

[0014] Preferably, the step of forming the diamond-like carbon protective layer includes: introducing argon gas and CH4 gas into the vacuum chamber, controlling the vacuum degree of the vacuum chamber to be 2×10 -1 Pa to 2.3×10 -1 Pa.

[0015] Preferably, the step of forming the diamond-like carbon protective layer further comprises: controlling the ion source power to be 3.0-3.5 kW and the workpiece negative bias voltage to be 150 V-160 V.

[0016] Preferably, the step of forming the diamond-like carbon protective layer further comprises: controlling the deposition time of the diamond-like carbon protective layer to be 40-60 minutes. DETAILED DESCRIPTION

[0017] The surface coating method of the fixture of the present invention is further described below in conjunction with the embodiments, but the present invention is not limited thereby. The method of the present invention is intended to provide a surface coating method of a fixture, which improves the hardness of the fixture surface without causing damage to the semiconductor element, and the surface of the fixture after treatment is smooth and dense, and is not easy to generate debris to form dust, thereby ensuring the performance of the semiconductor element and subsequent use.

[0018] In one embodiment of the surface coating method of the fixture of the present invention, the following steps are included:

[0019] In the vacuum chamber, ion beam etching is performed on the surface of the fixture to clean the surface of the fixture;

[0020] sputtering to form a carbon layer on a surface of the jig; and

[0021] A diamond-like carbon protective layer is deposited on the carbon layer.

[0022] The present invention first cleans the surface of the fixture by ion beam etching in a vacuum chamber to facilitate subsequent coating; then, a carbon layer and a diamond-like carbon protective layer are sequentially sputtered and deposited on the surface of the fixture. The diamond-like carbon protective layer, as the outermost layer of the fixture, has a suitable hardness, is smooth and dense, and is not easy to break and produce debris to form dust pollution, thereby ensuring the performance of the semiconductor element and subsequent use; and the carbon layer, as a transition layer between the diamond-like carbon protective layer and the fixture surface, makes the diamond-like carbon protective layer more solid and not easy to peel off. Furthermore, the method of the present invention is very simple, easy to operate, and low in cost.

[0023] Specifically, the coating method of the present invention is carried out in a vacuum chamber, and the formation of the film is achieved by controlling the gas, vacuum degree and working conditions.

[0024] Specifically, ion beam etching is to make the substrate, that is, the surface of the fixture to be coated, cleaner, which is beneficial to the deposition process. Preferably, argon plasma, argon oxygen mixed gas, or argon ethane mixed gas is used to clean the surface of the pre-coated fixture.

[0025] Next, a carbon layer is formed on the surface of the fixture by sputtering. Specifically, the vacuum degree of the vacuum chamber is controlled to be 2.4×10 -2 Pa to 2.8×10 -2 Pa, such as 2.5×10 -2 Pa is preferably, the ion source power is controlled to be 2.0-2.5kW, the workpiece negative bias voltage is 100V-150V, the sputtering target, i.e., the carbon target, is turned on, and the sputtering target power is controlled to be 1.5-2.0kW. Under this process condition, carbon deposition is performed, the deposition time is 20-25 minutes, and the deposition rate is 2.5-3.0 angstroms / second. Thus, a carbon layer is formed as a transition layer.

[0026] Then, argon and CH4 gases were introduced into the vacuum chamber, and the vacuum degree of the vacuum chamber was controlled to be 2×10 -1 Pa to 2.3×10 -1 Pa, such as 2×10 -1 Pa is preferably controlled, the ion source power is controlled to be 3.0-3.5 kW, and the workpiece negative bias voltage is 150 V-160 V. Under this process condition, the diamond-like carbon protective layer is deposited for 40-60 minutes. Thus, the diamond-like carbon protective layer is formed.

[0027] Through the above method, the outermost surface of the clamp is covered with a diamond-like carbon protective layer. The diamond-like carbon protective layer, as the outermost layer of the clamp, has a suitable hardness and is smooth and dense, which effectively protects against the problem of debris generated when the clamp is used, so that the dust-free degree in the working environment meets the dust standard level, thereby ensuring that the semiconductor components are not polluted by dust, and ensuring the performance of the semiconductor components and subsequent use. Moreover, the carbon layer serves as a transition layer between the diamond-like carbon protective layer and the surface of the clamp, making the diamond-like carbon protective layer more solid and not easy to peel off. Furthermore, the method of the present invention is very simple, easy to operate, low in cost, and suitable for popularization and use in industry.

[0028] The above disclosure is only a preferred embodiment of the present invention, which certainly cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the scope of the patent application of the present invention are still within the scope covered by the present invention.

Claims

1. A method for coating a surface of a fixture, characterized in that: The following steps are involved: In the vacuum chamber, ion beam etching is performed on the surface of the fixture to clean the surface of the fixture; sputtering to form a carbon layer on a surface of the jig; and A diamond-like carbon protective layer is deposited on the carbon layer.

2. The surface coating method of the fixture according to claim 1, characterized in that: The ion beam etching is performed by using argon plasma, argon oxygen mixed gas, or argon ethane mixed gas.

3. The surface coating method of the fixture according to claim 1, characterized in that: The step of forming the carbon layer comprises: controlling the vacuum degree of the vacuum chamber to be 2.4×10 -2 Pa to 2.8×10 -2 Pa.

4. The surface coating method of the fixture as claimed in claim 3, characterized in that: The step of forming the carbon layer also includes: controlling the ion source power to be 2.0-2.5 kW, the negative bias voltage of the workpiece to be 100 V-150 V, turning on the sputtering target, and the sputtering target power to be 1.5-2.0 kW.

5. The surface coating method of the fixture as claimed in claim 1, characterized in that: The step of forming the carbon layer includes: controlling the deposition time of the carbon layer to be 20-25 minutes and the deposition rate to be 2.5-3.0 angstroms / second.

6. The surface coating method of the fixture according to claim 1, characterized in that: The steps of forming the diamond-like carbon protective layer include: introducing argon gas and CH4 gas into the vacuum chamber, controlling the vacuum degree of the vacuum chamber to 2×10 -1 Pa to 2.3×10 -1 Pa.

7. The surface coating method of the fixture as claimed in claim 6, characterized in that: The step of forming the diamond-like carbon protective layer also includes: controlling the ion source power to be 3.0-3.5 kW and the workpiece negative bias voltage to be 150V-160V.

8. The surface coating method of a fixture as claimed in claim 1, characterized in that: The step of forming the diamond-like carbon protective layer also includes: controlling the deposition time of the diamond-like carbon protective layer to be 40-60 minutes.