Special equipment sensing information processing system and method based on digitization

Abstract

The invention relates to the field of special equipment detection, in particular to a digital-based special equipment sensing information processing system and method.The digital-based special equipment sensing information processing system comprises a film cultivation module, a classification excitation module, a high-temperature stabilization module, a sound wave control module and a matrix analysis module; the classification excitation module is used for performing annealing treatment on a film to different degrees and recovering excitation sound waves; the high-temperature stability module is used for fitting a thermal stability function of the film; the sound wave control module is used for matching a to-be-detected material and an ultrasonic sensor; the matrix analysis module is used for adjusting excitation current and analyzing material stress; the preparation process and the production process of the ultrasonic piezoelectric film can be optimized, the production efficiency and the product quality are improved, meanwhile, the sensing performance of the ultrasonic piezoelectric film is improved, the detection sensitivity and the resolution of sound waves are enhanced, and more efficient sound wave excitation and sensing functions are achieved.

Description

Technical Field

[0001] The present invention relates to the field of special equipment detection, and in particular to a special equipment sensor information processing system and method based on digitization. Background Art

[0002] Ultrasonic testing has become one of the most important means of special equipment inspection and testing due to its advantages of convenience, speed and harmlessness to the human body. It is widely used in the fields of defect detection, stress measurement, thickness measurement and bolt axial force measurement. The conventional inspection process is to coat the ultrasonic piezoelectric film on the material to be inspected, and the current excites the film to emit ultrasonic waves. The stress of each part of the material to be inspected is determined based on the transmission echo of the ultrasonic wave.

[0003] Existing ultrasonic sensors are mainly suitable for normal temperature environments. Under high temperature conditions, especially above 400°C, the ultrasonic piezoelectric film is affected by temperature and its internal parameters will change. When growing thin films by magnetron sputtering, testing and selecting thin films in different growth states is a major difficulty in high temperature detection technology. Selecting unqualified films can easily lead to unstable excited ultrasound.

[0004] Some thin film testing technologies use continuous annealing to detect the thermal stability of the film, but the annealing effects may interfere with each other, and this method mainly tests the piezoelectric properties of the film rather than the ultrasonic properties. The test speed is slow and the results are not accurate enough, and the excitation state of the film cannot be flexibly adjusted. Summary of the invention

[0005] The purpose of the present invention is to provide a digital-based special equipment sensor information processing system and method to solve the problems raised in the above background technology.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions: a digital-based special equipment sensor information processing system, comprising: a film cultivation module, a classification excitation module, a high temperature stabilization module, an acoustic wave control module and a matrix analysis module;

[0007] The thin film cultivation module is used to spray the piezoelectric coating on the crystalline substrate by using high-density radio frequency sputtering technology, adjust different cultivation parameters, control the orientation and density of the piezoelectric coating on the substrate surface, use arc ion plating technology to prepare a transition layer composed of AgCr material, and tightly fit the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film, and record the cultivation parameters of each film during the cultivation process;

[0008] The classification excitation module is used to classify the films under the same cultivation conditions, anneal the ultrasonic piezoelectric films at different temperatures and annealing times, pass a standard excitation current into the treated films, set an acoustic wave collection device at the other end of the films to detect the echo of the films, substitute the first peak value of the echo of the films into the ultrasonic excitation formula, and obtain the central frequency of the excitation sound waves of each film;

[0009] The high temperature stability module is used to fit the shift of the center frequency of the film under different annealing conditions, and the thermal stability function of the ultrasonic piezoelectric film is established with the annealing temperature and annealing time as two-dimensional independent variables and the center frequency shift as the influencing parameter. The working temperature and annealing time of each material to be tested are substituted into the thermal stability function of each film to calculate the thermal stability of the film on the material to be tested;

[0010] The acoustic wave control module is used to match the ultrasonic piezoelectric film and the material to be tested, select the film material with the lowest integral of the thermal stability function within the corresponding frequency of the ultrasonic wave as the pre-selected ultrasonic sensor for the material to be tested, match ultrasonic sensors for all materials to be tested, and arrange the production plan according to the number of materials to be tested and the cultivation conditions of the ultrasonic piezoelectric film, and adjust the excitation current according to the thermal stability function of the pre-selected material according to the temperature and annealing time of the base material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency.

[0011] The matrix analysis module is used to coat a preselected ultrasonic film on the matrix of the material to be tested, and during the detection process, the ultrasonic film is current excited using the excitation current corresponding to the ultrasonic piezoelectric film, the echo of the ultrasonic signal in the material to be tested is collected, the echo signal is transmitted to the computer, the stress equation of the matrix of the material to be tested is analyzed, and the material stress model is output.

[0012] Further, the film cultivation module includes: a radio frequency sputtering unit and a crystal growth unit;

[0013] The radio frequency sputtering unit is used to spray a piezoelectric coating material on a crystalline substrate, wherein the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials, and the substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate;

[0014] The crystal growth unit is used to prepare a transition layer composed of AgCr material, and grow piezoelectric coating crystals on the transition layer to form an ultrasonic piezoelectric film.

[0015] Furthermore, the classification excitation module includes: an annealing control unit, an ultrasonic excitation unit and a spectrum analysis unit;

[0016] The annealing control unit is used to perform annealing treatments at different temperatures and durations on the ultrasonic piezoelectric films obtained under various cultivation parameters, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness;

[0017] The ultrasonic excitation unit is used to pass an excitation current to the ultrasonic piezoelectric film to collect the excited ultrasonic wave;

[0018] The spectrum analysis unit is used to separate the peak value of the ultrasonic wave and output the center frequency of the sound wave.

[0019] Further, the high temperature stabilization module includes: a central comparison unit and a stability evaluation unit;

[0020] The center comparison unit is used to compare the center frequencies of the sound waves excited by the ultrasonic piezoelectric film under different annealing conditions;

[0021] The stability evaluation unit is used to output a thermal stability function of the ultrasonic piezoelectric film.

[0022] Further, the acoustic wave control module includes: a performance verification unit and a current regulation unit;

[0023] The performance verification unit is used to match the ultrasonic piezoelectric film and the material to be tested according to the thermal stability function and output the matching result;

[0024] The current regulating unit is used to calculate the sensor excitation current size according to the thermal stability function of the preselected film, the temperature of the base material and the annealing time.

[0025] Further, the substrate analysis module includes: a substrate coating unit, an echo collection unit and a stress assessment unit;

[0026] The substrate coating unit is used to coat a preselected ultrasonic film on the substrate of the material to be tested, and to pass an excitation current for ultrasonic excitation;

[0027] The echo collection unit is used to collect the echo of the excited ultrasound and transmit the echo of each frequency band to the computer;

[0028] The stress evaluation unit is used to analyze the echo and calculate the stress magnitude at each position of the material to be tested using an ultrasonic transmission stress model.

[0029] A special equipment sensor information processing method based on digitization includes the following steps:

[0030] Step S1. Spraying a piezoelectric coating on a crystalline substrate with different cultivation parameters, preparing a transition layer composed of AgCr material by arc ion plating technology, and closely attaching the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film;

[0031] Step S2. Annealing various types of ultrasonic piezoelectric films at different temperatures and annealing times, inputting a standard excitation current into the treated films, detecting the first peak of the excited sound wave, substituting the first peak into the ultrasonic excitation formula, and obtaining the center frequency of the excited sound wave;

[0032] Step S3. Fitting the shift of the center frequency of the film excitation sound wave under different annealing conditions, taking the annealing temperature and annealing time as two-dimensional variables, establishing the thermal stability function of the ultrasonic piezoelectric film, and calculating the thermal stability of the film on the material to be tested according to the working environment of the material to be tested;

[0033] Step S4. Matching an ultrasonic piezoelectric film for each material to be tested, so that the thermal stability of the selected ultrasonic piezoelectric film is minimized, and determining the cultivation parameters and production plan of the ultrasonic piezoelectric film according to the matching results;

[0034] Step S5. According to the thermal stability function of the ultrasonic piezoelectric film, the operating temperature of the matrix material and the annealing time, adjust the excitation current of the sensor so that the center frequency of the excitation sound wave is the same as the ideal test frequency, collect the echo of the excitation sound wave in the material to be tested, transmit the echo signal to the SVM model, and output the stress of each part of the matrix.

[0035] Further, step S1 includes:

[0036] Step S11. Spraying a piezoelectric coating material on a crystalline substrate using a high-density radio frequency sputtering technique, wherein the crystalline substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate, and the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials;

[0037] Step S12. Preparing a transition layer made of AgCr material in advance, growing piezoelectric coating crystals on the transition layer, making the transition layer and the piezoelectric coating fit closely together to form an ultrasonic piezoelectric film;

[0038] Step S13. Controlling the cultivation parameters during the film growth process to obtain ultrasonic piezoelectric films in different cultivation states, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness.

[0039] Further, step S2 includes:

[0040] Step S21. For each ultrasonic piezoelectric film obtained under the cultivation parameters, steps S22-S24 are executed to obtain the center frequency of the film excitation sound wave;

[0041] Step S22. Place the ultrasonic piezoelectric film in a high-temperature pressure-bearing device. Every other heating cycle, raise the temperature in the high-temperature pressure-bearing device by T0, where T0 is a preset temperature range. After the heating cycle, perform annealing treatment for different lengths of time on the film, and pass a standard excitation current through the annealed film.

[0042] Step S23. A sound wave collecting device is arranged at the other end of the film to detect the echo of the exciting sound wave, separate the first peak of the exciting sound wave, and obtain the sound wave amplitude corresponding to the first peak;

[0043] Step S24. Calculate the center frequency of the excitation sound wave according to the ultrasonic excitation formula, wherein the ultrasonic excitation formula is:

[0044]

[0045] Wherein, c is the first peak value of the excited sound wave, u is the magnetic permeability of the piezoelectric coating material, I is the magnitude of the exciting current, ωt is the frequency of the exciting current, p is the density of the material, s is the area of ​​the material, L is the skin depth of the material, and ω is the center frequency of the excited sound wave;

[0046] Substituting the first peak value and the parameters of the ultrasonic piezoelectric film into the ultrasonic excitation formula, the central frequency of the excited sound wave is obtained.

[0047] Further, step S3 includes:

[0048] Step S31. The center frequency of the exciting sound wave, the annealing temperature, annealing time and cultivation parameters of the ultrasonic piezoelectric film are stored in a database, and the center frequency is used as the dependent variable, and the annealing temperature and annealing time are used as two-dimensional influencing variables. The function F(Q, T) is fitted using Origin or MATLAB tools, where Q is the annealing temperature, T is the annealing time, and F(Q, T) is a thermal stability function, which represents the center frequency of the sound wave generated by the ultrasonic piezoelectric film under the standard excitation current;

[0049] Step S32: Substitute the working temperature and annealing time of the material to be tested into the thermal stability function of the ultrasonic piezoelectric film, and calculate the thermal stability according to the following formula:

[0050]

[0051] Among them, R is the thermal stability of the film, Q1 and Q2 are the upper and lower limits of the working temperature of the material to be tested, T1 and T2 are the upper and lower limits of the annealing time of the material to be tested, and Wa and Wb are the upper and lower limits of the ultrasonic frequency range.

[0052] Further, step S4 includes:

[0053] Step S41. For each material to be tested, the ultrasonic piezoelectric film with the lowest thermal stability is used as the pre-selected ultrasonic film for the material to be tested, and the serial number of the material to be tested and the cultivation parameters of the pre-selected ultrasonic film are marked in the database;

[0054] Step S42. Produce thin film sensors according to the cultivation parameters of the pre-selected ultrasonic films. The production quantity is determined by the quantity of the corresponding materials to be tested. The pre-selected ultrasonic films under the same cultivation parameters are combined and calculated to output a production plan for the thin film sensors.

[0055] Further, step S5 includes:

[0056] Step S51. Use different magnitudes of excitation current to conduct a power-on test on the preselected ultrasonic film, detect the center frequency of the excitation sound wave, take the best detected sound wave frequency of the detected sound wave as the ideal test frequency, and select the excitation current with the smallest deviation between the center frequency and the ideal test frequency as the ultrasonic detection current;

[0057] Step S52. Coat a preselected ultrasonic film on the substrate of the material to be tested, pass an ultrasonic detection current for ultrasonic excitation, collect the echo of the excited ultrasound, transmit the echo of each frequency band to the computer, and use the SVM model to analyze the echo on the computer to detect the stress magnitude at each position in the substrate of the material to be tested.

[0058] Compared with the prior art, the beneficial effects achieved by the present invention are:

[0059] 1. The present invention grows piezoelectric ultrasonic thin films on a crystalline substrate with different vapor deposition parameters, performs high-temperature annealing on the piezoelectric ultrasonic thin film materials grown under different adjustments, adjusts the annealing temperature and annealing time for each material, and detects the maximum amplitude of the excited sound wave. The quality and performance of the film at high temperature can be tested, which helps optimize the preparation process and production process of the ultrasonic piezoelectric film and improves production efficiency and product quality.

[0060] 2. The present invention calculates the center frequency of the exciting sound wave through the maximum amplitude and film parameters, obtains the two-dimensional high-temperature stability function of the film according to the deviation of the sound wave frequency under different conditions, replaces electrical detection with exciting sound wave detection, optimizes the film testing process, helps to determine the cultivation parameters of high-efficiency piezoelectric films, and ensures the accuracy and reliability of the test results.

[0061] 3. The present invention coats a preselected ultrasonic film in a base material, and adjusts the excitation current according to the temperature and annealing time of the base material and the high-temperature stability function of the preselected material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency, optimizes the sensing performance of the ultrasonic piezoelectric film, improves the detection sensitivity and resolution of sound waves, and realizes more efficient sound wave excitation and sensing functions. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0063] Figure 1 It is a structural schematic diagram of a digital-based special equipment sensor information processing system of the present invention;

[0064] Figure 2 It is a schematic diagram of the steps of a special equipment sensor information processing method based on digitization of the present invention. DETAILED DESCRIPTION

[0065] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0066] See also Figure 1 , the present invention provides a technical solution: a digital-based special equipment sensor information processing system, including: a film cultivation module, a classification excitation module, a high temperature stabilization module, an acoustic wave control module and a matrix analysis module;

[0067] The thin film cultivation module is used to spray the piezoelectric coating on the crystalline substrate by using high-density radio frequency sputtering technology, adjust different cultivation parameters, control the orientation and density of the piezoelectric coating on the substrate surface, use arc ion plating technology to prepare a transition layer composed of AgCr material, and tightly fit the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film, and record the cultivation parameters of each film during the cultivation process;

[0068] The film cultivation module includes: a radio frequency sputtering unit and a crystal growth unit;

[0069] The radio frequency sputtering unit is used to spray a piezoelectric coating material on a crystalline substrate, wherein the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials, and the substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate;

[0070] The crystal growth unit is used to prepare a transition layer composed of AgCr material, and grow piezoelectric coating crystals on the transition layer to form an ultrasonic piezoelectric film.

[0071] The classification excitation module is used to classify the films under the same cultivation conditions, anneal the ultrasonic piezoelectric films at different temperatures and annealing times, pass a standard excitation current into the treated films, set an acoustic wave collection device at the other end of the films to detect the echo of the films, substitute the first peak value of the echo of the films into the ultrasonic excitation formula, and obtain the central frequency of the excitation sound waves of each film;

[0072] The classification excitation module includes: an annealing control unit, an ultrasonic excitation unit and a spectrum analysis unit;

[0073] The annealing control unit is used to perform annealing treatments at different temperatures and durations on the ultrasonic piezoelectric films obtained under various cultivation parameters, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness;

[0074] The ultrasonic excitation unit is used to pass an excitation current to the ultrasonic piezoelectric film to collect the excited ultrasonic wave;

[0075] The spectrum analysis unit is used to separate the peak value of the ultrasonic wave and output the center frequency of the sound wave.

[0076] The high temperature stability module is used to fit the shift of the center frequency of the film under different annealing conditions, and the thermal stability function of the ultrasonic piezoelectric film is established with the annealing temperature and annealing time as two-dimensional independent variables and the center frequency shift as the influencing parameter. The working temperature and annealing time of each material to be tested are substituted into the thermal stability function of each film to calculate the thermal stability of the film on the material to be tested;

[0077] The high temperature stabilization module includes: a central comparison unit and a stability evaluation unit;

[0078] The center comparison unit is used to compare the center frequencies of the sound waves excited by the ultrasonic piezoelectric film under different annealing conditions;

[0079] The stability evaluation unit is used to output a thermal stability function of the ultrasonic piezoelectric film.

[0080] The acoustic wave control module is used to match the ultrasonic piezoelectric film and the material to be tested, select the film material with the lowest integral of the thermal stability function within the corresponding frequency of the ultrasonic wave as the pre-selected ultrasonic sensor for the material to be tested, match ultrasonic sensors for all materials to be tested, and arrange the production plan according to the number of materials to be tested and the cultivation conditions of the ultrasonic piezoelectric film, and adjust the excitation current according to the thermal stability function of the pre-selected material according to the temperature and annealing time of the base material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency.

[0081] The acoustic wave control module includes: a performance verification unit and a current regulation unit;

[0082] The performance verification unit is used to match the ultrasonic piezoelectric film and the material to be tested according to the thermal stability function and output the matching result;

[0083] The current regulating unit is used to calculate the sensor excitation current size according to the thermal stability function of the preselected film, the temperature of the base material and the annealing time.

[0084] The matrix analysis module is used to coat a preselected ultrasonic film on the matrix of the material to be tested, and during the detection process, the ultrasonic film is current excited using the excitation current corresponding to the ultrasonic piezoelectric film, the echo of the ultrasonic signal in the material to be tested is collected, the echo signal is transmitted to the computer, the stress equation of the matrix of the material to be tested is analyzed, and the material stress model is output.

[0085] The substrate analysis module includes: a substrate coating unit, an echo collection unit and a stress evaluation unit;

[0086] The substrate coating unit is used to coat a preselected ultrasonic film on the substrate of the material to be tested, and to pass an excitation current for ultrasonic excitation;

[0087] The echo collection unit is used to collect the echo of the excited ultrasound and transmit the echo of each frequency band to the computer;

[0088] The stress evaluation unit is used to analyze the echo and calculate the stress magnitude at each position of the material to be tested using an ultrasonic transmission stress model.

[0089] like Figure 2 As shown, a special equipment sensor information processing method based on digitization includes the following steps:

[0090] Step S1. Spraying a piezoelectric coating on a crystalline substrate with different cultivation parameters, preparing a transition layer composed of AgCr material by arc ion plating technology, and closely attaching the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film;

[0091] Step S1 includes:

[0092] Step S11. Spraying a piezoelectric coating material on a crystalline substrate using a high-density radio frequency sputtering technique, wherein the crystalline substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate, and the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials;

[0093] Step S12. Preparing a transition layer made of AgCr material in advance, growing piezoelectric coating crystals on the transition layer, making the transition layer and the piezoelectric coating fit closely together to form an ultrasonic piezoelectric film;

[0094] Step S13. Controlling the cultivation parameters during the film growth process to obtain ultrasonic piezoelectric films in different cultivation states, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness.

[0095] Step S2. Annealing various types of ultrasonic piezoelectric films at different temperatures and annealing times, inputting a standard excitation current into the treated films, detecting the first peak of the excited sound wave, substituting the first peak into the ultrasonic excitation formula, and obtaining the center frequency of the excited sound wave;

[0096] Step S2 includes:

[0097] Step S21. For each ultrasonic piezoelectric film obtained under the cultivation parameters, steps S22-S24 are executed to obtain the center frequency of the film excitation sound wave;

[0098] Step S22. Place the ultrasonic piezoelectric film in a high-temperature pressure-bearing device. Every other heating cycle, raise the temperature in the high-temperature pressure-bearing device by T0, where T0 is a preset temperature range. After the heating cycle, perform annealing treatment for different lengths of time on the film, and pass a standard excitation current through the annealed film.

[0099] Step S23. A sound wave collecting device is arranged at the other end of the film to detect the echo of the exciting sound wave, separate the first peak of the exciting sound wave, and obtain the sound wave amplitude corresponding to the first peak;

[0100] Step S24. Calculate the center frequency of the excitation sound wave according to the ultrasonic excitation formula, wherein the ultrasonic excitation formula is:

[0101]

[0102] Wherein, c is the first peak value of the excited sound wave, u is the magnetic permeability of the piezoelectric coating material, I is the magnitude of the exciting current, ωt is the frequency of the exciting current, p is the density of the material, s is the area of ​​the material, L is the skin depth of the material, and ω is the center frequency of the excited sound wave;

[0103] Substituting the first peak value and the parameters of the ultrasonic piezoelectric film into the ultrasonic excitation formula, the central frequency of the excited sound wave is obtained.

[0104] Step S3. Fitting the shift of the center frequency of the film excitation sound wave under different annealing conditions, taking the annealing temperature and annealing time as two-dimensional variables, establishing the thermal stability function of the ultrasonic piezoelectric film, and calculating the thermal stability of the film on the material to be tested according to the working environment of the material to be tested;

[0105] Step S3 includes:

[0106] Step S31. The center frequency of the exciting sound wave, the annealing temperature, annealing time and cultivation parameters of the ultrasonic piezoelectric film are stored in a database, and the center frequency is used as the dependent variable, and the annealing temperature and annealing time are used as two-dimensional influencing variables. The function F(Q, T) is fitted using Origin or MATLAB tools, where Q is the annealing temperature, T is the annealing time, and F(Q, T) is a thermal stability function, which represents the center frequency of the sound wave generated by the ultrasonic piezoelectric film under the standard excitation current;

[0107] Step S32: Substitute the working temperature and annealing time of the material to be tested into the thermal stability function of the ultrasonic piezoelectric film, and calculate the thermal stability according to the following formula:

[0108]

[0109] Among them, R is the thermal stability of the film, Q1 and Q2 are the upper and lower limits of the working temperature of the material to be tested, T1 and T2 are the upper and lower limits of the annealing time of the material to be tested, and Wa and Wb are the upper and lower limits of the ultrasonic frequency range.

[0110] Step S4. Matching an ultrasonic piezoelectric film for each material to be tested, so that the thermal stability of the selected ultrasonic piezoelectric film is minimized, and determining the cultivation parameters and production plan of the ultrasonic piezoelectric film according to the matching results;

[0111] Step S4 includes:

[0112] Step S41. For each material to be tested, the ultrasonic piezoelectric film with the lowest thermal stability is used as the pre-selected ultrasonic film for the material to be tested, and the serial number of the material to be tested and the cultivation parameters of the pre-selected ultrasonic film are marked in the database;

[0113] Step S42. Produce thin film sensors according to the cultivation parameters of the pre-selected ultrasonic films. The production quantity is determined by the quantity of the corresponding materials to be tested. The pre-selected ultrasonic films under the same cultivation parameters are combined and calculated to output a production plan for the thin film sensors.

[0114] Step S5. According to the thermal stability function of the ultrasonic piezoelectric film, the operating temperature of the matrix material and the annealing time, adjust the excitation current of the sensor so that the center frequency of the excitation sound wave is the same as the ideal test frequency, collect the echo of the excitation sound wave in the material to be tested, transmit the echo signal to the SVM model, and output the stress of each part of the matrix.

[0115] Step S5 includes:

[0116] Step S51. Use different magnitudes of excitation current to conduct a power-on test on the preselected ultrasonic film, detect the center frequency of the excitation sound wave, take the best detected sound wave frequency of the detected sound wave as the ideal test frequency, and select the excitation current with the smallest deviation between the center frequency and the ideal test frequency as the ultrasonic detection current;

[0117] Step S52. Coat a preselected ultrasonic film on the substrate of the material to be tested, pass an ultrasonic detection current for ultrasonic excitation, collect the echo of the excited ultrasound, transmit the echo of each frequency band to the computer, and use the SVM model to analyze the echo on the computer to detect the stress magnitude at each position in the substrate of the material to be tested.

[0118] Embodiment: The laser equipment grows three kinds of ultrasonic films under different growth parameters. After high temperature testing, the thermal stability coefficients between the three kinds of films and the material to be tested are 2.1, 3.0 and 1.7 respectively. The third kind of ultrasonic film is selected for high temperature detection. When the excitation current is adjusted, it is detected that the center frequency of the film is closest to the ideal frequency under the action of 0.1mA current, and ultrasonic detection is carried out with 0.1mA as the excitation current.

[0119] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0120] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A digital-based special equipment sensor information processing method, characterized in that: The method comprises the following steps: Step S1. Spraying a piezoelectric coating on a crystalline substrate with different cultivation parameters, preparing a transition layer composed of AgCr material by arc ion plating technology, and closely attaching the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film; Step S2. Annealing various types of ultrasonic piezoelectric films at different temperatures and annealing times, inputting a standard excitation current into the treated films, detecting the first peak of the excited sound wave, substituting the first peak into the ultrasonic excitation formula, and obtaining the center frequency of the excited sound wave; Step S3. Fitting the shift of the center frequency of the film excitation sound wave under different annealing conditions, taking the annealing temperature and annealing time as two-dimensional variables, establishing the thermal stability function of the ultrasonic piezoelectric film, and calculating the thermal stability of the film on the material to be tested according to the working environment of the material to be tested; Step S4. Matching an ultrasonic piezoelectric film for each material to be tested, so that the thermal stability of the selected ultrasonic piezoelectric film is minimized, and determining the cultivation parameters and production plan of the ultrasonic piezoelectric film according to the matching results; Step S5. According to the thermal stability function of the ultrasonic piezoelectric film, the operating temperature of the matrix material and the annealing time, adjust the excitation current of the sensor so that the center frequency of the excitation sound wave is the same as the ideal test frequency, collect the echo of the excitation sound wave in the material to be tested, transmit the echo signal to the SVM model, and output the stress of each part of the matrix.

2. A digital-based special equipment sensor information processing method according to claim 1, characterized in that: Step S1 includes: Step S11. Spraying a piezoelectric coating material on a crystalline substrate using a high-density radio frequency sputtering technique, wherein the crystalline substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate, and the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials; Step S12. Preparing a transition layer made of AgCr material in advance, growing piezoelectric coating crystals on the transition layer, making the transition layer and the piezoelectric coating fit closely together to form an ultrasonic piezoelectric film; Step S13. Controlling the cultivation parameters during the film growth process to obtain ultrasonic piezoelectric films in different cultivation states, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness.

3. A digital-based special equipment sensor information processing method according to claim 2, characterized in that: Step S2 includes: Step S21. For each ultrasonic piezoelectric film obtained under the cultivation parameters, steps S22-S24 are executed to obtain the center frequency of the film excitation sound wave; Step S22. Place the ultrasonic piezoelectric film in a high-temperature pressure-bearing device. Every other heating cycle, raise the temperature in the high-temperature pressure-bearing device by T0, where T0 is a preset temperature range. After the heating cycle, perform annealing treatment for different lengths of time on the film, and pass a standard excitation current through the annealed film. Step S23. A sound wave collecting device is arranged at the other end of the film to detect the echo of the exciting sound wave, separate the first peak of the exciting sound wave, and obtain the sound wave amplitude corresponding to the first peak; Step S24. Calculate the center frequency of the excitation sound wave according to the ultrasonic excitation formula, wherein the ultrasonic excitation formula is: Wherein, c is the first peak value of the excited sound wave, u is the magnetic permeability of the piezoelectric coating material, I is the magnitude of the exciting current, ωt is the frequency of the exciting current, p is the density of the material, s is the area of ​​the material, L is the skin depth of the material, and ω is the center frequency of the excited sound wave; Substituting the first peak value and the parameters of the ultrasonic piezoelectric film into the ultrasonic excitation formula, the central frequency of the excited sound wave is obtained.

4. A digital-based special equipment sensor information processing method according to claim 3, characterized in that: Step S3 includes: Step S31. The center frequency of the exciting sound wave, the annealing temperature, annealing time and cultivation parameters of the ultrasonic piezoelectric film are stored in a database, and the center frequency is used as the dependent variable, and the annealing temperature and annealing time are used as two-dimensional influencing variables. The function F(Q, T) is fitted using Origin or MATLAB tools, where Q is the annealing temperature, T is the annealing time, and F(Q, T) is a thermal stability function, which represents the center frequency of the sound wave generated by the ultrasonic piezoelectric film under the standard excitation current; Step S32: Substitute the working temperature and annealing time of the material to be tested into the thermal stability function of the ultrasonic piezoelectric film, and calculate the thermal stability according to the following formula: Among them, R is the thermal stability of the film, Q1 and Q2 are the upper and lower limits of the working temperature of the material to be tested, T1 and T2 are the upper and lower limits of the annealing time of the material to be tested, and Wa and Wb are the upper and lower limits of the ultrasonic frequency range.

5. A digital-based special equipment sensor information processing method according to claim 4, characterized in that: Step S4 includes: Step S41. For each material to be tested, the ultrasonic piezoelectric film with the lowest thermal stability is used as the pre-selected ultrasonic film for the material to be tested, and the serial number of the material to be tested and the cultivation parameters of the pre-selected ultrasonic film are marked in the database; Step S42. Produce thin film sensors according to the cultivation parameters of the pre-selected ultrasonic thin films. The production quantity is determined by the quantity of the corresponding materials to be tested. The pre-selected ultrasonic thin films under the same cultivation parameters are combined and calculated, and the production plan of the thin film sensors is output; Step S5 includes: Step S51. Use different magnitudes of excitation current to conduct a power-on test on the preselected ultrasonic film, detect the center frequency of the excitation sound wave, take the best detected sound wave frequency of the detected sound wave as the ideal test frequency, and select the excitation current with the smallest deviation between the center frequency and the ideal test frequency as the ultrasonic detection current; Step S52. Coat a preselected ultrasonic film on the substrate of the material to be tested, pass an ultrasonic detection current for ultrasonic excitation, collect the echo of the excited ultrasound, transmit the echo of each frequency band to the computer, and use the SVM model to analyze the echo on the computer to detect the stress magnitude at each position in the substrate of the material to be tested.

6. A digital-based special equipment sensor information processing system, characterized in that: The system includes the following modules: a film cultivation module, a classification excitation module, a high temperature stabilization module, an acoustic wave control module and a matrix analysis module; The thin film cultivation module is used to spray the piezoelectric coating on the crystalline substrate by using high-density radio frequency sputtering technology, adjust different cultivation parameters, control the orientation and density of the piezoelectric coating on the substrate surface, use arc ion plating technology to prepare a transition layer composed of AgCr material, and tightly fit the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film, and record the cultivation parameters of each film during the cultivation process; The classification excitation module is used to classify the films under the same cultivation conditions, anneal the ultrasonic piezoelectric films at different temperatures and annealing times, pass a standard excitation current into the treated films, set an acoustic wave collection device at the other end of the films to detect the echo of the films, substitute the first peak value of the echo of the films into the ultrasonic excitation formula, and obtain the central frequency of the excitation sound waves of each film; The high temperature stability module is used to fit the shift of the center frequency of the film under different annealing conditions, and the thermal stability function of the ultrasonic piezoelectric film is established with the annealing temperature and annealing time as two-dimensional independent variables and the center frequency shift as the influencing parameter. The working temperature and annealing time of each material to be tested are substituted into the thermal stability function of each film to calculate the thermal stability of the film on the material to be tested; The acoustic wave control module is used to match the ultrasonic piezoelectric film and the material to be tested, select the film material with the lowest integral of the thermal stability function within the corresponding frequency of the ultrasonic wave as the pre-selected ultrasonic sensor for the material to be tested, match ultrasonic sensors for all materials to be tested, and arrange the production plan according to the number of materials to be tested and the cultivation conditions of the ultrasonic piezoelectric film, and adjust the excitation current according to the thermal stability function of the pre-selected material according to the temperature and annealing time of the base material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency. The matrix analysis module is used to coat a preselected ultrasonic film on the matrix of the material to be tested, and during the detection process, the ultrasonic film is current excited using the excitation current corresponding to the ultrasonic piezoelectric film, the echo of the ultrasonic signal in the material to be tested is collected, the echo signal is transmitted to the computer, the stress equation of the matrix of the material to be tested is analyzed, and the material stress model is output.

7. A digital-based special equipment sensor information processing system according to claim 6, characterized in that: The film cultivation module includes: a radio frequency sputtering unit and a crystal growth unit; The radio frequency sputtering unit is used to spray a piezoelectric coating material on a crystalline substrate, wherein the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials, and the substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate; The crystal growth unit is used to prepare a transition layer composed of AgCr material, and grow piezoelectric coating crystals on the transition layer to form an ultrasonic piezoelectric film.

8. A digital-based special equipment sensor information processing system according to claim 7, characterized in that: The classification excitation module includes: an annealing control unit, an ultrasonic excitation unit and a spectrum analysis unit; The annealing control unit is used to perform annealing treatments at different temperatures and durations on the ultrasonic piezoelectric films obtained under various cultivation parameters, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness; The ultrasonic excitation unit is used to pass an excitation current to the ultrasonic piezoelectric film to collect the excited ultrasonic wave; The spectrum analysis unit is used to separate the peak value of the ultrasonic wave and output the center frequency of the sound wave.

9. A digital-based special equipment sensor information processing system according to claim 8, characterized in that: The high temperature stabilization module includes: a central comparison unit and a stability evaluation unit; The center comparison unit is used to compare the center frequencies of the sound waves excited by the ultrasonic piezoelectric film under different annealing conditions; The stability evaluation unit is used to output a thermal stability function of the ultrasonic piezoelectric film; The acoustic wave control module includes: a performance verification unit and a current regulation unit; The performance verification unit is used to match the ultrasonic piezoelectric film and the material to be tested according to the thermal stability function and output the matching result; The current regulating unit is used to calculate the sensor excitation current size according to the thermal stability function of the preselected film, the temperature of the base material and the annealing time.

10. A digital-based special equipment sensor information processing system according to claim 9, characterized in that: The substrate analysis module includes: a substrate coating unit, an echo collection unit and a stress evaluation unit; The substrate coating unit is used to coat a preselected ultrasonic film on the substrate of the material to be tested, and to pass an excitation current for ultrasonic excitation; The echo collection unit is used to collect the echo of the excited ultrasound and transmit the echo of each frequency band to the computer; The stress evaluation unit is used to analyze the echo and calculate the stress magnitude at each position of the material to be tested using an ultrasonic transmission stress model.

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