Inductively coupled plasma processing device

Abstract

The invention relates to an induced electric field plasma processing device. Disclosed is an induced electric field plasma processing apparatus, comprising: a chamber main body (100) having an opening formed on the upper side thereof; a window assembly (200) including one or more windows (210) that cover the opening portion so as to form a processing space (S) together with the chamber body (100), and a support frame (220) that supports the windows (210); a substrate support part (300) which is provided in the chamber main body (100) and supports a substrate (10); a gas injection unit that injects a gas into the processing space (S); and an antenna unit (500) which is provided in a reference plane region corresponding to the plane shape of the substrate (10) at the upper part of the window assembly (200), and which forms an induced electric field in the processing space (S).

Description

Technical Field

[0001] The invention relates to an inductively coupled plasma processing device. Background Art

[0002] As a device for performing substrate processing such as deposition process and etching process, an inductively coupled plasma processing device is provided with a chamber body forming a sealed processing space and a window is provided on the top of the chamber body, and a high-frequency (RF) antenna is provided on the upper side of the window. When the antenna is energized, an induced electric field is formed in the processing space, and the processing gas is plasmatized by the induced electric field, thereby performing substrate processing.

[0003] Here, the substrate to be processed by the inductively coupled plasma processing apparatus may be any substrate as long as it requires deposition, etching, etc., such as a substrate for an LCD panel, a wafer, etc.

[0004] On the other hand, in response to the increasing demand for larger substrates and the need to increase production speed by processing a greater number of substrates, inductively coupled plasma processing apparatuses that perform substrate processing are also becoming larger.

[0005] Accordingly, as the inductively coupled plasma processing apparatus is also enlarged, the components and antennas installed in the inductively coupled plasma processing apparatus also need to be enlarged in planar layout size.

[0006] Specifically, as an antenna layout pattern of an inductively coupled plasma processing apparatus for processing a large substrate, panels such as those disclosed in Patent Documents 1 and 2 have been proposed.

[0007] However, in order to perform good substrate processing, it is important to form a uniform plasma in the processing space. However, as substrates have become larger recently, there is a problem of reducing the uniformity of plasma formed in the processing space of the inductively coupled plasma processing device and making it difficult to control the plasma uniformity.

[0008] Specifically, in the case of the prior art such as Patent Documents 1 and 2, it is difficult to control the plasma near the apex, and thus there is a problem that there is a limit to improving the uniformity of substrate processing.

[0009] In particular, referring to Patent Documents 1 and 2, since the antennas located near the edge of the substrate, that is, the outermost antennas are arranged along the edge of the substrate, there is a problem that the plasma near the vertices of the rectangular shape cannot be independently controlled.

[0010] Furthermore, when multiple antenna branches are provided to improve the uniformity of plasma, the inductance of each antenna is low, resulting in a decrease in plasma density, which causes a problem in that good substrate processing cannot be performed.

[0011] Accordingly, Patent Documents 3 and 4 propose a solution of providing one or more corner antenna components, wherein the corner antenna components are arranged adjacent to the vertices of a rectangular substrate to control the plasma density of the corner portion, thereby enabling local control of the plasma and achieving good substrate processing.

[0012] However, in the case of the solutions of Patent Documents 3 and 4, since the antenna component is arranged near the apex, the surface of the support frame supporting the window is increased, and the parasitic capacitance formed between the support frame and the antenna component causes power loss, thereby reducing the process efficiency.

[0013] Furthermore, there is a problem of increased operating costs due to arcing or the like between the support frame and the antenna component, which damages the antenna component or generates particles, acting as a pollution factor, or requiring maintenance of the device.

[0014] (Patent Document 1) KR 10-2055371B1

[0015] (Patent Document 2) KR 10-2020622B1

[0016] (Patent Document 3) KR 10-2022-0151461A

[0017] (Patent Document 4) KR 10-2023-0059442A Summary of the invention

[0018] Problem to be solved

[0019] In order to solve the above problems, an object of the present invention is to provide an inductively coupled plasma processing apparatus that can control plasma without reducing the density of plasma in corners, thereby significantly improving the uniformity and efficiency of substrate processing.

[0020] Means of solving the problem

[0021] The present invention is proposed to achieve the above-mentioned purpose of the present invention. The present invention discloses an induction electric field plasma processing device, characterized in that it includes: a chamber body 100, which is formed with an opening on the upper side; a window assembly 200, including one or more windows 210 and a support frame 220, wherein the window 210 covers the opening to form a processing space S together with the chamber body 100, and the support frame 220 supports the window 210; a substrate support part 300, which is arranged on the chamber body 100 to support the substrate 10; a gas injection part, which injects gas into the processing space S; an antenna part 500; , a reference plane area corresponding to the plane shape of the substrate 10 is set on the upper part of the window assembly 200, thereby forming an induced electric field in the processing space S; wherein the antenna part 500 includes more than one corner antenna group 700, and the corner antenna group 700 is arranged adjacent to the vertex of the reference plane area to control the plasma density of the corner part; the corner antenna group 700 includes: a plurality of lower antenna components 711, 712, 713, which are arranged at intervals from the center of the reference plane area toward the vertex direction, and power is applied to make the current direction the same, and the first normal line L of the plate surface p parallel to the top of the window 210; one or more upper antenna components 731, 732 are located at a higher position than the lower antenna components 711, 712, 713 with respect to the window 210, and power is applied so that the current flows in a direction opposite to the current direction of the lower antenna components 711, 712, 713, and the second normal L of the plate surface h With the first normal L p Form an angle of 0 to 90 degrees.

[0022] The chamber body 100 , the substrate 10 , and the reference plane region may have a rectangular quadrilateral shape.

[0023] Preferably, the lower antenna components 711, 712, 713 are aligned with adjacent lower antenna components 711, 712, 713 along the first normal line L p The spacing in the direction is smaller than the spacing between the upper ends of the lower antenna components 711 , 712 , 713 and the lower ends of the adjacent upper antenna components 731 , 732 in the normal direction of the window 210 .

[0024] Preferably, a plurality of the upper antenna components 731, 732 are provided, and the plurality of the upper antenna components 731, 732 are spaced apart in the normal direction of the window 210; the spacing between the upper antenna components 731, 732 and adjacent upper antenna components 731, 732 is smaller than the spacing between the upper antenna components 731, 732 from the upper ends of the lower antenna components 711, 712, 713.

[0025] The window assembly 200 may further include a cover member made of a ceramic material to protect a surface facing the processing space S.

[0026] The corner antenna group 700 may include: a first connecting antenna component 721, 722, connecting the other end of each of the lower antenna components 711, 712, 713 and one end of each of the upper antenna components 731, 732; a second connecting antenna component 723, 724, connecting the other end of each of the upper antenna components 731, 732 and one end of each of the lower antenna components 711, 712, 713.

[0027] The first connecting antenna components 721, 722 and the second connecting antenna components 723, 724 may be formed with a plurality of second coupling portions 792 spaced at predetermined intervals so that the coupling heights of the lower antenna components 711, 712, 713 and the upper antenna components 731, 732 can be changed.

[0028] The first connection antenna components 721 and 722 and the second connection antenna components 723 and 724 may extend vertically or obliquely from the top of the window 210 toward the upper side.

[0029] The first connection antenna components 721 , 722 and the second connection antenna components 723 , 724 are plates that are perpendicular to the side surface of the support frame 220 .

[0030] The corner antenna group 700 may be formed into a three-dimensional spiral structure.

[0031] The free end of the lower antenna component 711 located farthest from the vertex among the multiple lower antenna components 711, 712, and 713 is connected to the RF power supply 150; the free end of the lower antenna component 713 located closest to the vertex among the multiple lower antenna components 711, 712, and 713 can be grounded.

[0032] A plurality of the upper antenna components 731 and 732 may be configured, and the plurality of the upper antenna components 731 and 732 may be configured at intervals in the vertical direction.

[0033] The plurality of upper antenna components 731 and 732 may be arranged such that at least a portion thereof overlaps with upper antenna components 731 and 732 adjacent to each other in the vertical direction.

[0034] The upper antenna components 731 and 732 may be disposed to vertically overlap at least a portion of the lower antenna components 711 , 712 , and 713 .

[0035] The upper antenna components 731 and 732 may be partially recessed toward the apex.

[0036] Both ends of the plurality of lower antenna components 711 , 712 , 713 may be perpendicular to the side surface of the supporting frame 220 .

[0037] The plurality of lower antenna members 711 , 712 , and 713 may be formed into a straight line that is bent two or more times, or may be formed into a curve, or may be formed into a combination of a straight line and a curve, when viewed from above.

[0038] The inductive electric field plasma processing apparatus may include an edge antenna group 510 , and the edge antenna group 510 is disposed at intervals from the edge of the reference plane area and the one or more corner antenna groups 700 .

[0039] The directions of currents in portions where the corner antenna group 700 and the edge antenna group 510 are adjacent to each other may be the same.

[0040] In order to arrange the plurality of windows 210 in a horizontal and vertical arrangement of m×n (m and n are natural numbers greater than 2), the support frame 220 may form a plurality of setting openings 211 in a grid structure.

[0041] The corner antenna group 700 may be disposed corresponding to a vertex setting opening 211 among the plurality of setting openings 211 , and the vertex setting opening 211 is located at a position corresponding to a vertex of the reference plane area.

[0042] The antenna unit 500 may further include one or more inner antenna groups 520 and 530 . The one or more inner antenna groups 520 and 530 are located inside the edge antenna group 510 and are concentric with the edge antenna group 510 .

[0043] Effects of the Invention

[0044] The inductively coupled plasma processing device of the present invention is a device that has corner antenna groups for controlling plasma density, corresponding to the vertices of a rectangular substrate, i.e., the corners. This allows the plasma in the corners to be controlled without reducing the plasma density, thereby greatly improving the uniformity of substrate processing.

[0045] In particular, the inductively coupled plasma processing device of the present invention is a corner antenna group composed of multiple lower antenna components and upper antenna components, the multiple lower antenna components are arranged perpendicular to the top of the window, and the upper antenna component and the multiple lower antenna components form a three-dimensional spiral structure and are located at a higher position than the lower antenna component, thereby forming an induced electric field of sufficient strength while minimizing the formation of parasitic capacitance between the side of the support frame near the vertex, thereby greatly improving the power efficiency used to form the induced electric field.

[0046] Furthermore, the formation of parasitic capacitance is minimized, thereby preventing damage to the antenna component and / or the support frame, and the formation of particles is minimized, thereby minimizing the maintenance cost of the inductively coupled plasma processing device.

[0047] In particular, the upper antenna component is arranged parallel to the upper surface of the window, thereby minimizing the formation of parasitic capacitance with the side surface of the support frame near this point, and can significantly improve the power efficiency for forming the induced electric field.

[0048] In addition, in the inductively coupled plasma processing device of the present invention, the upper antenna component is formed at a relatively higher position than the lower antenna component, thereby forming a relatively weaker magnetic field on the window side, minimizing the generation of particles on the bottom surface of the window, i.e., the surface facing the processing space, thereby reducing the maintenance cost of the device to a minimum.

[0049] Furthermore, by increasing the replacement cycle of the cover member made of a protective ceramic material to prevent particles and the like from being formed on the bottom surface of the window, the maintenance cost of the device can be minimized. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to the present invention.

[0051] Figure 2 It is shown Figure 1 A plan view of a window assembly and an antenna portion in an inductively coupled plasma processing device.

[0052] Figure 3a It is shown Figure 2 Conceptual diagram of RF power supply and grounding in the antenna section. Figure 3b is to expand Figure 3a Enlarged view of part A.

[0053] Figure 4 It is shown Figure 2 A circuit diagram of the equivalent circuit of the antenna part.

[0054] Figure 5 yes Figure 2 Cross-sectional view along the V-V' direction.

[0055] Figures 6a to 6d As shown Figure 2 A diagram of an example of a corner antenna group in an antenna section of; wherein, Figure 6a This is a three-dimensional diagram of the corner antenna cluster. Figure 6b This is an exploded perspective view of the corner antenna cluster. Figure 6c This is the front view of the corner antenna cluster. Figure 6d is a plan view showing a horizontal antenna component in a corner antenna.

[0056] Figure 7 It is shown Figure 6a A side view of a connection structure between an antenna component of a corner antenna and a power connection conductor.

[0057] Figure 8 It is shown in the Figure 2 Conceptual diagram of a magnetic field formed in a corner portion of the magnetic field formed by the antenna portion.

[0058] Figure 9a This is a conceptual diagram of a simulation of an electric field formed in a corner portion of an electric field formed by the prior art, namely, Patent Document 4; Figure 9b It is shown by Figure 2 A conceptual diagram of a simulation of an electric field formed in a corner portion of the electric field formed by the antenna portion.

[0059] (Explanation of Reference Numerals)

[0060] 100: Chamber body 200: Window assembly

[0061] 300: substrate support part 500: antenna part DETAILED DESCRIPTION

[0062] Hereinafter, the inductively coupled plasma processing apparatus of the present invention will be described in detail with reference to the accompanying drawings.

[0063] like Figure 1 and Figure 2 As shown, the inductively coupled plasma processing apparatus of the present invention includes: a chamber body 100, which has an opening formed on the upper side; a window assembly 200, which includes one or more windows 210 and a support frame 220, wherein the one or more windows 210 cover the opening to form a processing space S together with the chamber body 100, and the support frame 220 supports the window 210; a substrate support portion 300, which is arranged in the chamber body 100 to support the substrate 10; a gas injection portion, which injects gas into the processing space S; and an antenna portion 500, which is arranged on the upper part of the window assembly 200 in a reference plane area corresponding to the plane shape of the substrate 10 to form an induced electric field in the processing space S.

[0064] The chamber body 100 has an opening formed on the upper side and is used to form a processing space S together with a window assembly 200 described later. It can be any structure as long as it can withstand a predetermined vacuum pressure required to perform the process.

[0065] Preferably, the chamber body 100 is formed in a planar shape corresponding to the planar shape of the substrate 10 to be processed, for example, the planar shape is a rectangular quadrilateral.

[0066] Then, the chamber body 100 is formed with one or more gates 110 for the substrate 10 to enter and exit, and may be connected to an exhaust pipe 180 connected to a vacuum pump (not shown) to control the pressure in the processing space S and remove byproducts.

[0067] In addition, the chamber body 100 is detachably coupled to a cover member 140 , and the cover member 140 covers the antenna unit 500 to support the antenna unit 500 , shield an induced electric field formed in the antenna unit 500 , and the like.

[0068] The gas injection part (not shown) is a structure for injecting gas into the processing space S, and may have various structures according to the gas injection structure, and may be disposed on the support frame 220 described later.

[0069] Specifically, the gas injection part (not shown) may include more than one flow path and a plurality of injection ports. The flow path is formed on the support frame 220 to flow the gas, and the injection ports are connected to the flow path and formed on the bottom surface of the support frame 220 .

[0070] In addition, the gas injection part (not shown) may have various structures, such as being separately combined with the support frame 220 or also formed on a window, disposed on a side wall of the chamber body 100, and the like.

[0071] The substrate support part 300 is a structure for placing the substrate 10 and can be any structure as long as it can support the substrate 10. According to the process, the RF power 150 can be applied or grounded, and a heat transfer component for cooling or heating can be provided.

[0072] The window assembly 200 includes one or more windows 210 covering the opening of the chamber body 100 to form a processing space S together with the chamber body 100 and a support frame 220 supporting the window 210. Various structures can be provided according to the setting structure of the window 210 and the support frame 220.

[0073] The window 210 is a structure interposed between the processing space S and the antenna unit 500 so that an induced electric field can be formed in the processing space S through the antenna unit 500. The window 210 may have various structures, and the material may be quartz, ceramic, metal, etc.

[0074] In order to process a large substrate, the window 210 may be composed of a plurality of windows 210 instead of a single window 210 .

[0075] Here, in the case where a plurality of windows 210 are provided, the windows 210 may have various shapes, such as polygons such as triangles and quadrilaterals, circles, ellipses, etc., in consideration of the formation of an induced electric field for substrate processing.

[0076] In addition, the plane shape of the window 210 may have a single shape such as a triangle, or may have a combination of various shapes, such as a combination of multiple plane shapes of different shapes and sizes.

[0077] The support frame 220 is a structure for supporting the window 210 , and may be any structure as long as it can stably support the window 210 .

[0078] As an example, the support frame 220 is preferably made of metal material, so as to stably support the window 210 of the heavy object, but various materials can be used as long as they can provide sufficient rigidity, such as a combination of metal material and non-metal material, non-metal material, etc.

[0079] Here, the support frame 220 is required to have sufficient rigidity in order to support the window 210, and therefore is preferably made of metal material. In this case, if the window 210 is also made of metal material, an insulating component (not shown) may be inserted to support the window 210 for electrical insulation.

[0080] On the other hand, when a plurality of the windows 210 are provided, in order to support each window 210 , the support frame 220 may be formed with a plurality of setting openings 221 , and the shape of the setting openings 221 corresponds to the planar shape of the supported window 210 .

[0081] That is, the support frame 220 is formed with a plurality of setting openings 221 , and the plurality of setting openings 221 can be respectively provided with windows 210 having shapes corresponding to the planar shapes of the setting openings 221 .

[0082] As an example, the support frame 220 may be formed with a plurality of openings 211 in a grid structure, so that the plurality of windows 210 are arranged in a horizontal and vertical arrangement of m×n (m and n are natural numbers greater than 2).

[0083] To this end, the support frame 220 may include an outer frame 222 formed in a rectangular shape and disposed at the upper end of the chamber body 100 ; and an inner frame 223 having an opening 211 formed in a grid structure at an inner side of the outer frame 222 .

[0084] The outer frame 222 is a structure having the upper plane shape of the chamber body 100, that is, a rectangular quadrilateral shape and disposed at the upper end of the chamber body 100, and may have various structures.

[0085] Here, the outer frame 222 has an O-ring (not shown) interposed between the outer frame 222 and the upper end of the chamber body 100 , and can be sealed and combined with the chamber body 100 .

[0086] The internal frame 223 is formed as a grid structure on the inner side of the outer frame 222, for example, a structure in which openings 211 are arranged in a horizontal and vertical arrangement of m×n (m and n are natural numbers greater than 2), and can be composed of m-1 horizontal frames and n-1 vertical frames corresponding to the number of grids.

[0087] The inner frame 223 and the outer frame 222 are preferably made of a material with high rigidity such as metal in consideration of the load of the window 210 , but are not limited thereto.

[0088] In addition, the inner frame 223 and the outer frame 222 can be formed by a plurality of frame parts, but considering rigidity, the minimum number is used and it is preferred to form them as one piece.

[0089] On the other hand, the disposition opening 211 formed in the support frame 220 may have various structures according to the support structure of the window 210 .

[0090] For example, Figure 1 As shown, the support frame 220 may form a step on the inner circumferential surface where the opening 211 is provided, so as to support the window 210 corresponding to the step formed on the edge side of the window 210 .

[0091] On the other hand, the window assembly 200 may further be provided with a cover member (not shown), wherein the cover member (not shown) is made of a ceramic material and is used to protect the surface facing the processing space S.

[0092] The cover member is a member configured to cover a surface of the bottom surface of the window assembly 200 exposed to the processing space S to protect the surface facing the processing space S, and may have various structures, such as a plate member.

[0093] The material of the cover member may include a ceramic material.

[0094] The antenna part 500 is a structure that is arranged on the upper part of the window assembly 200 in a reference plane area corresponding to the planar shape of the substrate 10 to form an induced electric field in the processing space S. It can have various structures depending on the size of the substrate 10 as a processing object, substrate processing process conditions, etc.

[0095] In particular, the antenna unit 500 includes one or more corner antenna groups 700, and the corner antenna groups 700 are arranged adjacent to the vertices of the reference plane region to control the plasma density of the corner portions.

[0096] Then, in order to solve the problems of Patent Documents 3 and 4, Figures 2 to 6d As shown, the corner antenna group 700 may include: a plurality of lower antenna components 711, 712, 713, which are arranged at intervals from the center of the reference plane area to the vertex direction, and power is applied so that the current directions are the same, and the first normal line L of the panel surface p parallel to the top of the window 210; one or more upper antenna components 731, 732 are located at a higher position than the lower antenna components 711, 712, 713 for the window 210, power is applied to flow current in a direction opposite to the current direction of the lower antenna components 711, 712, 713, and the second normal L of the plate surface h With the first normal L p Form an angle of 0 to 90 degrees.

[0097] Here, the reference plane area is a plane area corresponding to the plane shape of the substrate 10 as the substrate processing object. When the plane shape of the substrate 10 is a rectangular quadrilateral, it can be formed as a rectangular quadrilateral and defined by an area larger than the edge of the substrate 10.

[0098] As an example, the reference plane area may be defined by an area that is larger than the plane size of the substrate 10 and smaller than the opening size formed by the outer frame 222 .

[0099] At this time, the window 210 is configured so that the upper surface is kept horizontal, that is, the normal line is formed vertically (Z-axis direction).

[0100] The plurality of lower antenna components 711, 712, 713 are arranged at intervals from the center of the reference plane area to the vertex direction, and power is applied so that the current direction is the same, and the first normal line L of the plate surface p The structure parallel to the top of the window 210 may be of various structures.

[0101] Specifically, the plurality of lower antenna elements 711, 712, and 713 are made of a conductive metal material such as copper and can be formed of a plate-shaped conductor having a predetermined width and thickness.

[0102] In particular, the plurality of lower antenna components 711, 712, 713 may be arranged to be aligned with a first normal line L of the panel. p It is parallel to the top of the window 210 , that is, it is perpendicular to the top of the window 210 .

[0103] Then, the plurality of lower antenna elements 711 , 712 , and 713 may be formed into a straight line that is bent two or more times, a curved line, or a combination of a straight line and a curved line when viewed from above.

[0104] As an example, the multiple lower antenna components 711, 712, and 713 may include: a straight line portion 711a, 712a, and 713a, which is parallel to the first oblique line portion 511d of the edge antenna group 510 described later; and a pair of oblique line portions 711b, 712b, 713b, 711c, 712c, and 713c, which are parallel to the two edges forming the vertex at both ends of the straight line portions 711a, 712a, and 713a.

[0105] That is, the plurality of lower antenna elements 711 , 712 , and 713 are formed to be recessed at portions toward the apex.

[0106] The straight line portions 711a, 712a, and 713a are portions parallel to the first oblique line portion 511d of the edge antenna group 510, and may be arranged at intervals from the center of the reference plane area toward the vertex direction.

[0107] The pair of oblique line portions 711b, 712b, 713b, 711c, 712c, 713c are portions parallel to the two sides forming the vertices at both ends of the straight line portions 711a, 712a, 713a, respectively. Figure 6c and Figure 7 As shown, the end may be configured to be spaced apart from the side surface of the outer frame 222 by a preset first distance D1.

[0108] In addition, preferably, the two ends of the multiple lower antenna components 711, 712, and 713 are perpendicular to the support frame 220, that is, the side of the outer frame 222, so as to minimize the area toward the support frame 220, that is, toward the outer frame 222, and minimize the parasitic capacitance formed with the outer frame 222.

[0109] The upper antenna components 731 and 732 are located at a higher position than the lower antenna components 711, 712, and 713 with respect to the window 210, and a power supply is applied to flow a current in a direction opposite to the current direction of the lower antenna components 711, 712, and 713, and the second normal line L of the panel surface h With the first normal L p The structure constituting the angle of 0 to 90 degrees may have various structures.

[0110] Specifically, the upper antenna members 731 and 732 are made of a conductive metal material such as copper and can be formed of a plate-shaped conductor having a predetermined width and thickness.

[0111] Then, the upper antenna components 731 and 732 can be arranged to be the second normal line L of the panel. h With the first normal L p Form an angle of 0 to 90 degrees.

[0112] In particular, the upper antenna components 731 and 732 can be arranged to be the second normal line L of the panel. h Perpendicular to the upper surface of the window 210 , that is, the upper antenna components 731 , 732 may be parallel to the upper surface of the window 210 .

[0113] Then, the upper antenna members 731 and 732 may be formed into a straight line that is bent two or more times, or may be formed into a curved line, or may be formed into a combination of a straight line and a curved line, when viewed from above.

[0114] As an example, the upper antenna components 731, 732, which have a shape similar to that of the above-mentioned lower antenna components 711, 712, 713, may include: straight line portions 731a, 732a, which are parallel to the straight line portions 711a, 712a, 713a of the lower antenna components 711, 712, 713; and a pair of oblique line portions 731b, 732b, 731c, 732c, which are parallel to the two sides forming the vertex at both ends of the straight line portions 731a, 732a.

[0115] That is, the upper antenna members 731 and 732 may be formed to be recessed at portions facing the apex.

[0116] The straight line portions 731a and 732a are portions parallel to the straight line portions 711a, 712a, and 713a of the lower antenna elements 711, 712, and 713, and can be arranged at intervals in the vertical direction.

[0117] The pair of oblique line portions 731b, 732b, 731c, 732c are portions parallel to the two sides forming the vertices at both ends of the straight line portions 731a, 732a. Figure 6d As shown, the end may be spaced apart from the side surface of the outer frame 222 by a predetermined second distance D2.

[0118] As an example, the first distance D1 and the second distance D2 may be set to be the same.

[0119] On the other hand, the upper antenna components 731, 732 and the lower antenna components 711, 712, 713 are characterized in that they form a three-dimensional spiral structure together with the first connection antenna components 721, 722 and the second connection antenna components 723, 724 described later.

[0120] Accordingly, corresponding to the number of the lower antenna components 711, 712, 713, that is, when the number of the lower antenna components 711, 712, 713 is n (n is a natural number greater than 2), the number of the upper antenna components 731, 732 is n-1.

[0121] exist Figures 2 to 6d In the case of the corner antenna group 700 shown, the number of the lower antenna components 711, 712, and 713 is three, while the number of the upper antenna components 731 and 732 may be two.

[0122] At this time, when multiple upper antenna components 731, 732 are set, in order to maintain sufficient spacing in the horizontal direction from the outer frame 222 corresponding to the vertices of the standard right-angled quadrilateral, the multiple upper antenna components 731, 732 can be configured with spacing in the vertical direction.

[0123] In particular, the plurality of upper antenna members 731 and 732 may be arranged such that at least a portion thereof overlaps with upper antenna members 731 and 732 adjacent to each other in the vertical direction.

[0124] On the other hand, it is preferable that the upper antenna components 731 and 732 are located at a higher position with respect to the window 210 than the lower antenna components 711 , 712 , and 713 .

[0125] This is because the induced electric field used for substrate processing is formed by the lower antenna components 711, 712, and 713, and the upper antenna components 731 and 732 are located at a higher position than the lower antenna components 711, 712, and 713 with respect to the window 210, thereby preventing the formation of the induced electric field from being affected.

[0126] Furthermore, the upper antenna components 731 and 732 are located at a higher position than the lower antenna components 711, 712, and 713 with respect to the window 210, thereby minimizing the magnetic flux of the magnetic field on the bottom side of the window 210 at the corresponding position, thereby minimizing the generation of particles.

[0127] On the other hand, the lower antenna components 711, 712, 713 are aligned with the adjacent lower antenna components 711, 712, 713 along the first normal line L p The spacing in the direction may be smaller than the spacing between the upper ends of the lower antenna components 711 , 712 , 713 and the lower ends of the adjacent upper antenna components 731 , 732 in the direction of the upper normal of the window 210 .

[0128] That is, in order to minimize the influence on the electric field and the magnetic field formed by the lower antenna members 711 , 712 , 713 , the upper antenna members 731 , 732 may be formed at a higher upper side than the lower antenna members 711 , 712 , 713 .

[0129] Then, in order to maintain a sufficient horizontal spacing from the outer frame 222 corresponding to the vertex of the reference plane area, the upper antenna components 731 and 732 may be arranged to overlap at least a portion of the lower antenna components 711 , 712 and 713 .

[0130] On the other hand, the corner antenna group 700 may include: a first connecting antenna component 721, 722, connecting the other end of each of the lower antenna components 711, 712, 713 and one end of each of the upper antenna components 731, 732, so that RF power is applied at one end and the other end is grounded; a second connecting antenna component 723, 724, connecting the other end of each of the upper antenna components 731, 732 and one end of each of the lower antenna components 711, 712, 713.

[0131] The first connection antenna members 721 and 722 are structures that connect the other ends of the lower antenna members 711, 712, and 713 and one ends of the upper antenna members 731 and 732, and can have various structures.

[0132] As an example, the first connection antenna components 721 and 722 may be formed of a plate-shaped conductor made of a metal material having the same width and thickness as those of the lower antenna components 711 , 712 , and 713 .

[0133] The second connection antenna members 723 and 724 are structures for connecting the other ends of the upper antenna members 731 and 732 and one ends of the lower antenna members 711, 712, and 713, and can have various structures.

[0134] As an example, the second connection antenna components 723 and 724 may be formed of a plate-shaped conductor made of a metal material having the same width and thickness as the lower antenna components 711 , 712 , and 713 .

[0135] On the other hand, the first connecting antenna components 721, 722 and the second connecting antenna components 723, 724 can form a plurality of second coupling portions 792 spaced at predetermined intervals so that the coupling heights of the coupled lower antenna components 711, 712, 713 and the upper antenna components 731, 732 can be changed.

[0136] At this time, the lower antenna members 711 , 712 , and 713 may be formed with a first coupling portion 791 into which a bolt is inserted, so as to be coupled with the lower antenna members 711 , 712 , and 713 by means of a bolt (not shown) inserted into a second coupling portion 792 .

[0137] On the other hand, the structures of the first coupling portion 791 and the second coupling portion 792 may have various structures such as a through hole for inserting a bolt according to a coupling structure such as a threaded coupling.

[0138] Then, the first connection antenna components 721 and 722 and the second connection antenna components 723 and 724 may extend vertically or obliquely from the upper surface of the window 210 toward the upper side.

[0139] At this time, preferably, the first connecting antenna components 721, 722 and the second connecting antenna components 723, 724 extend vertically from the top of the window 210 to the upper side, so as to be sufficiently spaced apart in the horizontal direction from the outer frame 222 corresponding to the vertices of the standard right-angled quadrilateral.

[0140] This is to keep the first connecting antenna components 721, 722 and the second connecting antenna components 723, 724 sufficiently spaced apart in the horizontal direction from the outer frame 222 corresponding to the vertices of the standard right-angled quadrilateral, thereby forming a relatively larger distance between the first connecting antenna components 721, 722 and the second connecting antenna components 723, 724 and the outer frame 222, thereby minimizing the parasitic capacitance and greatly improving the efficiency of forming the induced electric field.

[0141] Furthermore, in order to minimize the formation of parasitic capacitance, the first connecting antenna components 721 , 722 and the second connecting antenna components 723 , 724 preferably have a plate surface perpendicular to the support frame 220 , that is, a side surface of the outer frame 222 .

[0142] That is, the areas of the first connecting antenna components 721, 722 and the second connecting antenna components 723, 724 facing the outer frame 222 are minimized, thereby minimizing the formation of parasitic capacitance, which can greatly improve the efficiency of forming the induced electric field.

[0143] On the other hand, the first connecting antenna components 721 , 722 and the second connecting antenna components 723 , 724 may be integrally formed with at least one of the lower antenna components 711 , 712 , 713 and the upper antenna components 731 , 732 .

[0144] Then, the corner antenna group 700 having the structure as described above may form a three-dimensional spiral structure to which the RF power source 150 is applied at one end and the other end is grounded.

[0145] Here, the three-dimensional spiral structure is formed by the lower antenna components 711, 712, 713 and the upper antenna components 731, 732, and the first connected antenna components 721, 722 and the second connected antenna components 723, 724 connecting these. According to the configuration of the lower antenna components 711, 712, 713 and the upper antenna components 731, 732, the first connected antenna components 721, 722 and the second connected antenna components 723, 724, three-dimensional spiral structures of various structures can be formed.

[0146] On the other hand, in the corner antenna group 700 having the structure as described above, the free end of the lower antenna component 711 located farthest from the vertex among the multiple lower antenna components 711, 712, and 713 is connected to the RF power supply 150, and the free end of the lower antenna component 713 located closest to the vertex among the multiple lower antenna components 711, 712, and 713 can be grounded.

[0147] That is, the antenna components of the corner antenna group 700 may be electrically connected to the power supply component 613 and the ground component 623 respectively by various methods such as welding and bolting.

[0148] Specifically, the free end of the lower antenna component 711 of the corner antenna group 700 can be connected to the power supply component 613 through one or more power supply connection conductors 643 and 644.

[0149] Here, the power supply applying member 613 is a member for supplying RF power from the RF power source 150 to each antenna member through a matching network, and may be made of the same material as the antenna member.

[0150] The power connection conductors 643 and 644 are conductors that connect the free end of the lower antenna component 711 of the corner antenna group 700 and the power supply component 613, and can have various structures, such as being formed integrally with the power supply component 613.

[0151] On the other hand, when connecting the free end of the lower antenna component 711 of the corner antenna group 700 and the power application component 613, if it is close to the adjacent outer frame 222, a parasitic capacitor may be formed. In order to prevent this phenomenon, the power application component 613 may be electrically connected through a horizontally vertically spaced conductor 644 and an extended conductor 643. The horizontally vertically spaced conductor 644 is spaced inwardly away from the side surface of the outer frame 222 and extends upward, and the extended conductor 643 is electrically connected to the horizontally vertically spaced conductor 644 and extends parallel to the outer frame 222.

[0152] The horizontal and vertical spacing conductors 644 are conductors that are spaced apart from the outer frame 222 by a third spacing D3 and extend upward in a direction away from the side of the outer frame 222. Figure 7 As shown, it can be composed of a first connecting conductive part 644a, a second connecting conductive part 644b and a diagonal extension part 644c, the first connecting conductive part 644a is electrically connected to the free end of the lower antenna component 711, the second connecting conductive part 644b is electrically connected to the extended conductor 643, and the diagonal extension part 644c extends from the first connecting conductive part 644a in the diagonal direction to connect the first connecting conductive part 644a and the second connecting conductive part 644b.

[0153] The extended conductor 643 is electrically connected to the horizontally and vertically spaced conductors 644 at one end, and extends parallel to the outer frame 222 at the other end to connect to the conductor of the power supply component 613. It can have various structures, such as being formed as an integral part with the power supply component 613 or formed as a separate component.

[0154] On the other hand, among the plurality of lower antenna components 711 , 712 , 713 , the free end of the lower antenna component 713 located closest to the vertex may have various coupling structures, such as direct or indirect coupling with the ground component 623 .

[0155] As an example, among the plurality of lower antenna components 711 , 712 , and 713 , the free end of the lower antenna component 713 located closest to the vertex may be connected to the ground component 623 via one or more ground connection conductors 633 , 634 .

[0156] On the other hand, Figure 4 As shown, when the corner antenna group 700 is grounded, variable capacitors V21 to V24 may be inserted for grounding.

[0157] Accordingly, the free end of the lower antenna component 713 is electrically connected to one end of a first grounding connection conductor 633 extending upward, and the other end of the first grounding connection conductor 633 is electrically connected to one end of a variable capacitor V21~V24, and the other end of the variable capacitor V21~V24 is electrically connected to a second grounding connection conductor 634, thereby being connected to the grounding component 623 for grounding.

[0158] On the other hand, the installation height of a part of the antenna components of the corner antenna group 700 above the window 210 can be changed. In order to adjust the installation height of the antenna components, the power application component 613 and the grounding component 623 are preferably combined with the antenna components by bolts.

[0159] Then, considering the adjustment of the setting height of the antenna component, the horizontally vertically spaced conductor 644 and the first grounding connection conductor 633 are plate-shaped conductive components, and a plurality of bolt connection holes 793, 794 for bolt connection are formed at predetermined intervals, which can be electrically connected to the lower antenna components 711, 713 formed with the first connection portion 791.

[0160] On the other hand, the corner antenna group 700 having the above-described structure may be disposed corresponding to the vertex arrangement opening 211 among the plurality of arrangement openings 211 , wherein the vertex arrangement opening 211 is located at a position corresponding to the vertex of the reference plane region.

[0161] By setting up the corner antenna group 700 having the structure as described above, the applied voltage of the part where the RF power is applied is independently controlled, and then according to the process, the plasma in the corner part can be controlled without reducing the density of the plasma, thereby significantly improving the uniformity of substrate processing.

[0162] Furthermore, the antenna components constituting the corner antenna group 700 are sufficiently spaced apart from the support frame 220, especially the side of the outer frame 222, or the area of ​​the portion facing the side of the outer frame 222 is minimized, thereby minimizing the parasitic capacitance between the outer frame 222 and the power loss, which can greatly improve the power efficiency for forming the induced electric field.

[0163] Figure 9a This is a conceptual diagram of a simulation of an electric field formed in a corner portion of an electric field formed by the prior art, namely, Patent Document 4; Figure 9b It is shown by Figure 2 A conceptual diagram of a simulation of an electric field formed in a corner portion of the electric field formed by the antenna portion.

[0164] like Figure 9a and Figure 9b As shown, it can be confirmed that in the structure of the present invention Figures 2 to 6d The case of the antenna structure shown greatly alleviates the effect of electric field concentration in the portion adjacent to the corner antenna element.

[0165] In addition, it can be confirmed that the electric field concentration effect between the corner antenna component and the adjacent support frame, that is, the outer frame 222 is also greatly alleviated.

[0166] In addition, the results of performing an etching process on a SiOx film using the inductive electric field plasma processing apparatus of the present invention and the inductive electric field plasma processing apparatus of Patent Document 4 can confirm that the etching rate is greatly improved from 2232.9 / min and the uniformity is 10.67% to 2596.6 / min and the uniformity is 5.91%.

[0167] Although there are some differences in other parts such as the installation height of the remaining antenna groups and each antenna component except the corner antenna group, the etching target film, etching gas, and process time are the same. By setting the corner antenna group as described above, it can be confirmed that the etching speed and uniformity are greatly improved.

[0168] On the other hand, the corner antenna group 700 having the above-described structure can be flexibly used in combination with antenna structures of various patterns and structures in the remaining parts except for the corner parts.

[0169] In particular, the antenna unit 500 including the corner antenna group 700 may include an edge antenna group 510 , and the edge antenna group 510 is arranged at a distance from a side of the reference rectangular quadrilateral region and one or more corner antenna groups 700 .

[0170] The edge antenna group 510 is an antenna group that is spaced apart from the edge of the reference plane area and one or more corner antenna groups 700 and may include a plurality of edge antenna components 511 .

[0171] Then, the edge antenna component 511 is provided as an antenna component that is arranged at intervals from the edge of the reference plane area and at least one corner antenna group 700 to form the edge antenna group 510, and can be arranged in a predetermined pattern using a plate-shaped conductor such as copper.

[0172] In particular, the edge antenna group 510 may have more than one ring through the edge antenna component 511, and preferably may have a side ring structure with multiple rings.

[0173] In addition, it is preferable that the directions of currents in the portions where the corner antenna group 700 and the edge antenna group 510 are adjacent to each other are the same.

[0174] As described above, if the directions of the currents flowing through the lower antenna elements 711, 712, and 713 of the corner antenna group 700 are made the same, a stronger induced electric field can be formed.

[0175] In addition, the corner antenna group 700 and the edge antenna group 510 may be disposed at the same height from the top of the window 210 in a portion adjacent to the edge antenna group 510 .

[0176] As described above, if the corner antenna group 700 is arranged at the same height from the window 210 as the edge antenna group 510 in the portion adjacent to the edge antenna group 510, the strengthening effect of the induced electric field formed by the corner antenna group 700 and the edge antenna group 510 can be maximized.

[0177] On the other hand, the number and length of the edge antenna components 511 are determined by the length and number of other antenna components constituting the antenna unit, such as the antenna components of the corner antenna group 700 .

[0178] Here, in order to facilitate controlling the overall impedance of the antenna unit 500 , the length of the edge antenna component 511 is preferably the same as that of other antenna components or has a preset allowable deviation.

[0179] Then, each loop angle of the edge antenna component 511 may have a loop angle of 90°×k (where k is a natural number greater than 1), such as 90°, 180°, 270°, 360°, etc., at the center of the reference plane area.

[0180] Here, the ring angle is defined as a rotation angle from one end to the other end with respect to the center of the reference plane area.

[0181] On the other hand, as an example, Figures 2 to 3b As shown, the edge antenna components 511 of the edge antenna group 510 are arranged at intervals from the edge of the reference plane area, and one end is connected to the RF power supply 150, and the other end can be grounded.

[0182] In addition, the edge antenna group 510, especially the edge antenna component 511, in order to form a ring structure, the sides of the right-angled quadrilateral of the substrate 10 except the vertex may have one or more straight line parts and the part facing the corner part may have one or more side oblique parts 511d.

[0183] In addition, when the edge antenna group 510 has more than one lateral oblique portion 511d, in order for the corner antenna group 700 to form an enhanced induced electric field together with the lateral oblique portion 511d, it is preferred that the lateral oblique portion 511d of the edge antenna group 510 is parallel to the straight portions 711a, 712a, and 713a of the lower antenna components 711, 712, and 713 in adjacent portions.

[0184] Furthermore, the edge antenna group 510 and the corner antenna group 700 have the same current direction in the adjacent portions, thereby forming an enhanced induced electric field.

[0185] Specifically, if Figure 5 As shown, the currents flowing in the lateral oblique line portion 511d of the edge antenna group 510 and the lower antenna components 711, 712, 713 of the corner antenna group 700 parallel thereto have the same direction, thereby forming an enhanced induced electric field.

[0186] On the other hand, in order to control the plasma density near the vertex of the substrate 10, for the lower antenna components 711, 712, 713 of the corner antenna group 700, in particular, the straight line portions 711a, 712a, 713a whose current directions are the same as the lateral oblique portion 511d of the edge antenna group 510, when viewed from the top, preferably include the vertex of the substrate 10 or are arranged on a more inner side than the vertex of the substrate 10.

[0187] On the other hand, the edge antenna group 510 may include four edge antenna components 511 to form a ring structure so that one end (circle marked in black in the figure) is located at the center of each of the four sides of the reference plane area.

[0188] Then, each edge antenna component 511 may include more than one parallel section.

[0189] The parallel portion is defined as a portion where one conductive line is branched into two or more conductive lines and then reconnected into one conductive line in order to partially expand the range of formation of the induced electric field.

[0190] On the other hand, although the edge antenna group 510 is described as being composed of four, various combinations are possible, such as two or more, depending on the length of the antenna component.

[0191] However, in order to form a relatively concentrated magnetic field together with the corner antenna group 700 described later, the edge antenna group 510 is preferably formed as an oblique line portion facing the corner antenna group 700 .

[0192] The oblique line portion is a portion which is arranged adjacent to the corner antenna group 700 described later to form a relatively concentrated magnetic field. Preferably, power is applied to flow current in the same direction as the current flowing in the corner antenna group 700, and various patterns such as straight lines and curves can be formed opposite to the corner antenna group 700.

[0193] On the other hand, when the substrate 10 to be processed is of a large size, in order to form an appropriate induction electric field when processing the large substrate, the antenna unit 500 is an inner antenna group 520, 530 and an edge antenna group 510 in which various patterns can be arranged together on the inner side of the edge antenna group 510, or there may be no edge antenna group 510.

[0194] In order to form an induced electric field suitable for processing large substrates, the inner antenna groups 520 and 530 are antenna groups arranged inside the edge antenna group 510 and can be configured into various patterns, such as an antenna group that is concentric with the edge antenna group 510 or configured with more than one small ring structure.

[0195] As an example, the antenna portion 500 may further include one or more inner antenna groups 520 and 530 , and the inner antenna groups 520 and 530 are concentric with the edge antenna group 510 .

[0196] In particular, the inner antenna groups 520 and 530 may include: a central antenna group 520 located in the center of the reference plane area; and one or more intermediate antenna groups 540 disposed between the central antenna group 520 and the edge antenna group 510 and concentric with the central antenna group 520 .

[0197] The central antenna group 520 is an antenna group that is configured in a circular, polygonal, preferably quadrilateral pattern at the center of a reference plane area through one or more antenna components. It can have various structures depending on the number of antenna components, ring angles and patterns.

[0198] As an example, the central antenna group 520 has a rectangular pattern in plan view and is composed of two antenna elements arranged to have a loop angle of about 810°.

[0199] The central antenna group 520 may have a triple-ring structure by means of the ring angle and the number of rings as described above.

[0200] On the other hand, one ends of the antenna components may be respectively arranged on sides facing each other.

[0201] Then, the central antenna group 520 may be located in a central setting opening 221 located at the center among the plurality of setting openings 221 .

[0202] On the other hand, preferably, the central antenna group 520 is arranged at a more inner side relative to the middle antenna group 540 and the edge antenna group 510, and preferably has a relatively maximum loop angle when antenna components having the same actual length are arranged.

[0203] The intermediate antenna group 540 is configured with more than one and is configured between the central antenna group 520 and the edge antenna group 510 , and can be concentric with the central antenna group 520 .

[0204] Then, the middle antenna group 540 may have the same or similar pattern as the edge antenna group 510 described above.

[0205] As an example, Figure 2 As shown, the middle antenna group 540 has a planar shape of a rectangular quadrilateral pattern, and can be composed of four antenna elements and can be arranged at a loop angle of about 270°.

[0206] The middle antenna group 540 may have a triple-ring structure by means of the ring angle and the number of settings as described above.

[0207] On the other hand, one end of each of the antenna components may be arranged on four sides, respectively.

[0208] Then, the middle antenna group 540 may be disposed to surround a central arrangement opening 221 located at the center among the plurality of arrangement openings 221 .

[0209] On the other hand, the middle antenna group 540 is preferably provided with a smaller loop angle than the edge antenna group 510 when the middle antenna group 540 is provided at a more inner side than the edge antenna group 510 and has antenna components of substantially the same length.

[0210] Then, similar to the above-mentioned edge antenna group 510 , in order to form a partially enhanced induced electric field, the middle antenna group 540 preferably forms an oblique line portion facing the corner antenna group 700 .

[0211] The oblique line portion is used as a portion for forming a partially enhanced magnetic field near the corner antenna group 700 described later. Preferably, a power source is applied to flow current in the same direction as the current flowing in the corner antenna group 700, and various patterns such as straight lines and curves can be formed toward the corner antenna group 700.

[0212] The inner antenna groups 520 and 530 may have more than one loop through the inner antenna components 521 and 531, and preferably may have an inner loop structure having multiple loops.

[0213] exist Figure 2 The solid dots and the hollow dots respectively represent examples of a portion connected to an RF power source and a portion connected to a ground.

[0214] On the other hand, regarding the above-mentioned setting of the corner antenna group 700, the corner antenna group 700 may be set corresponding to the vertex setting opening 211 among the plurality of setting openings 211, and the vertex setting opening 211 is located at a position corresponding to the vertex of the reference plane area.

[0215] As described above, in the case where the corner antenna group 700 is disposed corresponding to the opening 211 disposed at one vertex, it is possible to prevent the corner antenna group 700 from being distorted by the support frame 220 when a relatively stronger induced electric field is formed.

[0216] In addition, a portion of the edge antenna group 510 may be located at the vertex to set the opening 211 to prevent being distorted by the support frame 220 when a relatively stronger induced electric field is formed.

[0217] Furthermore, a portion of the inner antenna groups 520 and 530 may be disposed corresponding to the opening 211 disposed at the vertex to prevent being distorted by the support frame 220 when a relatively stronger induced electric field is formed.

[0218] On the other hand, Figure 4 As shown, the other end of at least a part of the antenna components 511, 521, 531, and 541 constituting the antenna unit 500 can be connected to a variable capacitor V30, V41 to V44, V21 to V24, and V11 to V14 (VVC; voltage variable capacitor) for adjusting impedance for grounding.

[0219] Then, one end of the antenna elements 511 , 521 , 531 , and 541 constituting the antenna unit 500 is connected to an RF power source 150 of a preset frequency through a matching network (not shown).

[0220] The RF power source 150 is a power source for applying RF power to the antenna unit 500 to form an induced electric field near the window 210 , and may use an RF power source having a frequency suitable for performing a desired process.

[0221] The variable capacitors V30, V41 to V44, V21 to V24, and V11 to V14 are connected to the ground end of at least a part of the antenna components 511, 521, 531, and 541 constituting the antenna unit 500 and are grounded, and the structure for adjusting the impedance for controlling the plasma density can have various structures.

[0222] As an example, in order to control the plasma density in the central portion, the central antenna group 520 may be connected to two antenna elements 531 connected in parallel and a variable capacitor V30.

[0223] Then, the intermediate antenna group 540 includes four antenna components 531 connected in parallel and variable capacitors V41 to V44 may be connected to each of them to control the plasma density surrounding the central portion.

[0224] Then, the edge antenna group 510 may be configured such that variable capacitors V11 to V14 are connected to the four antenna elements 511 connected in parallel, respectively, to control the plasma density of the edge portion surrounding the middle portion.

[0225] Then, the one or more corner antenna groups 700 may be respectively connected to variable capacitors V21 to V24 to control the plasma density of the corner portions of the rectangular quadrilateral formed by the edge portions.

[0226] On the other hand, in the embodiment of the present invention, an example of connecting all the variable capacitors V21 to 24 is described, but of course only a part of the variable capacitors V21 to 24 may be provided, or all or a part of the fixed capacitors with constant capacitance may be provided.

[0227] As described above, similar to Patent Document 4, the antenna unit 500 including the edge antenna group 510 and the corner antenna group 700 can independently control the plasma density in the center portion and the corner portion, thereby performing more uniform substrate processing, such as etching process.

[0228] The above is only a part of the relevant description of the preferred embodiments that can be implemented by the present invention. It is well known that the scope of the present invention should not be limited to the above-mentioned embodiments. The technical ideas of the present invention described above and its fundamental technical ideas are all included in the scope of the present invention.

Claims

1. An induction electric field plasma processing device, characterized in that: include: The chamber body (100) has an opening formed on the upper side; A window assembly (200) comprising one or more windows (210) and a support frame (220), wherein the window (210) covers the opening to form a processing space (S) together with the chamber body (100), and the support frame (220) supports the window (210); A substrate supporting portion (300) is arranged on the chamber body (100) to support the substrate (10); a gas injection unit for injecting gas into the processing space (S); An antenna unit (500) is arranged on the upper part of the window assembly (200) in a reference plane area corresponding to the plane shape of the substrate (10), thereby forming an induced electric field in the processing space (S); The antenna unit (500) includes more than one corner antenna group (700). The corner antenna group (700) is arranged adjacent to the vertex of the reference plane area to control the plasma density of the corner portion; The corner antenna group (700) comprises: A plurality of lower antenna components (711, 712, 713) are arranged at intervals from the center of the reference plane area toward the vertex direction, and power is applied so that the current directions are the same, and the first normal line (L p ) is parallel to the top of the window (210); One or more upper antenna components (731, 732) are located at a higher position than the lower antenna components (711, 712, 713) with respect to the window (210), and a power source is applied so that a current flows in a direction opposite to the current direction of the lower antenna components (711, 712, 713), and a second normal (L h ) and the first normal (L p ) form an angle of 0 to 90°.

2. The induction electric field plasma processing device according to claim 1, characterized in that: The planar shapes of the chamber body (100), the substrate (10) and the reference plane area are rectangular quadrilaterals.

3. The induction electric field plasma processing device according to claim 1, characterized in that: The lower antenna component (711, 712, 713) and the adjacent lower antenna component (711, 712, 713) are aligned with each other along the first normal line (L p ) direction is smaller than the spacing between the upper ends of the lower antenna components (711, 712, 713) and the lower ends of the adjacent upper antenna components (731, 732) in the normal direction of the window (210).

4. The induction electric field plasma processing device according to claim 1, characterized in that: A plurality of upper antenna components (731, 732) are provided, wherein the plurality of upper antenna components (731, 732) are provided at intervals in the normal direction of the window (210); The spacing between the upper antenna components (731, 732) and adjacent upper antenna components (731, 732) is smaller than the spacing between the upper ends of the lower antenna components (711, 712, 713) and the upper antenna components (731, 732).

5. The induction electric field plasma processing device according to claim 1, characterized in that: The window assembly (200) is also provided with a cover component made of ceramic material for protecting the surface facing the processing space (S).

6. The induction electric field plasma processing device according to claim 1, characterized in that: The corner antenna group (700) comprises: A first connecting antenna component (721, 722) connected to the other end of each of the lower antenna components (711, 712, 713) and one end of each of the upper antenna components (731, 732); The second connecting antenna component (723, 724) connects the other end of each of the upper antenna components (731, 732) and one end of each of the lower antenna components (711, 712, 713).

7. The induction electric field plasma processing device according to claim 6, characterized in that: The first connecting antenna component (721, 722) and the second connecting antenna component (723, 724) are formed with a plurality of second coupling parts (792) spaced at predetermined intervals so that the coupling height of the coupled lower antenna component (711, 712, 713) and the upper antenna component (731, 732) can be changed.

8. The induction electric field plasma processing device according to claim 6, characterized in that: The first connection antenna component (721, 722) and the second connection antenna component (723, 724) extend vertically or obliquely from the top of the window (210) toward the upper side.

9. The induction electric field plasma processing device according to claim 8, characterized in that: The first connecting antenna component (721, 722) and the second connecting antenna component (723, 724) are plates with surfaces perpendicular to the side of the supporting frame (220).

10. The induction electric field plasma processing device according to claim 6, characterized in that: The corner antenna group (700) is formed into a three-dimensional spiral structure.

11. The induction electric field plasma processing device according to claim 6, characterized in that: The free end of the lower antenna component (711) located farthest from the vertex among the plurality of lower antenna components (711, 712, 713) is connected to an RF power source (150); A free end of the lower antenna component (713) located closest to the apex among the plurality of lower antenna components (711, 712, 713) is grounded.

12. The induction electric field plasma processing device according to any one of claims 1 to 11, characterized in that: A plurality of the upper antenna components (731, 732) are configured, and the plurality of the upper antenna components (731, 732) are configured at intervals in the vertical direction.

13. The induction electric field plasma processing device according to claim 12, characterized in that: The plurality of upper antenna components (731, 732) are arranged so that at least a portion overlaps with upper antenna components (731, 732) adjacent to each other in the vertical direction.

14. The induction electric field plasma processing device according to any one of claims 1 to 11, characterized in that: The upper antenna component (731, 732) is arranged to overlap with at least a part of the lower antenna component (711, 712, 713) in vertical direction.

15. The induction electric field plasma processing device according to claim 14, characterized in that: The upper antenna components (731, 732) are partially recessed toward the apex.

16. The induction electric field plasma processing device according to any one of claims 1 to 11, characterized in that: Two ends of the multiple lower antenna components (711, 712, 713) are perpendicular to the side surface of the support frame (220).

17. The induction electric field plasma processing device according to claim 16, characterized in that: The plurality of lower antenna components (711, 712, 713) are formed into a straight line bent two or more times, or a curved line, or a combination of a straight line and a curved line when viewed from above.

18. The induction electric field plasma processing device according to any one of claims 1 to 11, characterized in that: include: The edge antenna group (510) is arranged at intervals from the edge of the reference plane area and the one or more corner antenna groups (700).

19. The induction electric field plasma processing device according to claim 18, characterized in that: The directions of currents in the adjacent portions of the corner antenna group (700) and the edge antenna group (510) are the same.

20. The induction electric field plasma processing device according to claim 18, characterized in that: In order to arrange the plurality of windows (210) in a horizontal and vertical arrangement of m×n, the support frame (220) forms a plurality of setting openings (211) in a grid structure. Here, m and n are natural numbers greater than or equal to 2.

21. The induction electric field plasma processing device according to claim 20, characterized in that: The corner antenna group (700) is arranged corresponding to a vertex arrangement opening (211) among the plurality of arrangement openings (211), and the vertex arrangement opening (211) is located at a position corresponding to a vertex of the reference plane area.

22. The induction electric field plasma processing device according to claim 18, characterized in that: The antenna unit (500) further includes one or more inner antenna groups (520, 530), The one or more inner antenna groups (520, 530) are located inside the edge antenna group (510) and are concentric with the edge antenna group (510).

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