Electrostatic chuck and manufacturing method thereof

Abstract

The invention provides an electrostatic chuck and a manufacturing method thereof, and the electrostatic chuck comprises a metal base which is internally provided with a plurality of gas channels and lifting channels; the ceramic cover is arranged on the metal base in a covering manner; the bonding layer is arranged between the metal base and the ceramic cover and is used for connecting the ceramic cover and the metal base; the ceramic cover comprises a ceramic plate which is located above the metal base, and a gas sleeve and a lifting sleeve which penetrate through the upper surface and the lower surface of the ceramic plate are arranged on the ceramic plate. The gas sleeve penetrates through the joint layer and is communicated with the gas channel; the lifting sleeve penetrates through the joint layer and is communicated with the lifting channel; and the upper part of the ceramic ring is connected with the circumferential edge of the ceramic disc, and the lower part of the ceramic ring is arranged in the circumferential directions of the joint layer and the metal base in a surrounding and sleeving manner and covers the side walls of the joint layer and the metal base, so that plasma is effectively prevented from corroding the joint layer and the metal base from the side surface, and the service life of the electrostatic chuck is prolonged.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor equipment, and in particular relates to an electrostatic chuck and a manufacturing method thereof. Background Art

[0002] At present, the main structure of the electrostatic chuck (ESC) used in processes containing corrosive gases such as etching and thin film deposition includes three parts: the upper ceramic layer, the lower metal base and the middle bonding layer that bonds the former two together - the glue layer. The metal base contains structures such as water channels, gas channels, and circuits, as well as electrodes connected to the ceramic layer for generating static electricity and / or heating. The ceramic layer is mainly aluminum oxide or aluminum nitride ceramic. The glue layer is mainly thermally conductive silicone. The glue layer not only bonds the upper and lower parts, but also plays a role in uniform heat conduction.

[0003] In addition, the electrostatic chuck also includes one or more airflow channels and PIN (lifting pin) holes, and the airflow channels are used to transport heat-conducting gas, and the heat-conducting gas is filled in the area between the electrostatic chuck and the wafer substrate, thereby increasing the heat transfer rate between the wafer substrate and the wafer substrate support. When the wafer substrate is working, the outer side of the bonding layer is often in contact with the Plasma process gas and is corroded and aged. When there is no wafer substrate, when the process gas (such as the clean Plasma gas for cleaning the reaction chamber) is sprayed onto the upper surface of the electrostatic chuck, a small amount of process gas will enter the airflow channel and the PIN hole, so that the process gas will flow into the bonding layer area between the electrostatic chuck and the metal base, thereby causing the bonding layer around the airflow channel and the PIN hole to often contact the corrosive process gas and be corroded and aged. The material that is corroded and peeled off from the bonding layer is a process contaminant, which will produce particle defects and reduce the quality of the wafer product. At the same time, when the bonding layer is corroded and aged, the local heat transfer rate between the electrostatic chuck and the metal base will change, thereby generating temperature non-uniformity on the wafer substrate and causing process drift. Summary of the invention

[0004] The object of the present invention is to provide an electrostatic chuck and a method for manufacturing the same, so as to achieve sealing protection for the sides of the bonding layer and the metal base, and to isolate the circuits, gas paths and water paths within the electrostatic chuck, thereby effectively preventing plasma from invading and corroding the bonding layer and the sides of the metal base, thereby causing uneven heat conduction, reaction gas leakage, arc discharge and other undesirable phenomena.

[0005] To achieve the above-mentioned purpose, the present invention provides an electrostatic suction cup, which includes: a metal base, which is provided with a plurality of gas channels and lifting channels; a ceramic cover, which is provided on the metal base; a bonding layer, which is provided between the metal base and the ceramic cover, and is used to connect the ceramic cover and the metal base; the ceramic cover includes: a ceramic disk, which is located above the metal base, and the ceramic disk is provided with a gas sleeve and a lifting sleeve that penetrate the upper surface and the lower surface of the ceramic disk; the gas sleeve passes through the bonding layer to communicate with the gas channel; the lifting sleeve passes through the bonding layer to communicate with the lifting channel; a ceramic ring, the upper part of which is connected to the circumferential edge of the ceramic disk, and the lower part is arranged around the circumference of the bonding layer and the metal base, covering the side walls of the bonding layer and the metal base.

[0006] Optionally, the upper surface of the metal base is provided with steps in the circumferential direction, and the height of the lower part of the ceramic ring is equal to the sum of the thickness of the bonding layer and the step height of the metal base.

[0007] Optionally, the bottom end of the gas sleeve at least partially extends into the gas channel, and a first sealing ring is provided between the gas sleeve and the gas channel; the bottom end of the lifting sleeve at least partially extends into the lifting channel, and a second sealing ring is provided between the lifting sleeve and the lifting channel.

[0008] Optionally, the wall thickness of the ceramic ring is in the range of 0.1 to 10 mm; the wall thickness of the gas sleeve is in the range of 0.1 to 5 mm; and the wall thickness of the lifting sleeve is in the range of 0.1 to 5 mm.

[0009] Optionally, the ceramic disc, the gas sleeve, the lifting sleeve and the ceramic ring are formed by integral co-firing.

[0010] Optionally, the lower portion of the ceramic ring is further provided with an extension portion vertically arranged with respect to the ceramic ring, and the extension portion extends radially outwardly along the metal base to cover the stepped upper surface of the metal base.

[0011] The present invention also provides a method for manufacturing an electrostatic suction cup, which is suitable for the electrostatic suction cup as described above, and comprises: preparing the ceramic cover by means of a tape casting process and a slip casting process; providing a metal base, and coating a colloid on the metal base to form the bonding layer; aligning the gas sleeve and the lifting sleeve of the ceramic cover with the gas channel and the lifting channel on the metal base, and then pressing the ceramic cover and the metal base to complete the manufacture of the electrostatic suction cup.

[0012] Optionally, the ceramic cover is prepared by tape casting and slip casting, specifically comprising the following steps:

[0013] S11, manufacturing a first ceramic sub-disk by a tape-casting process;

[0014] S12, manufacturing a ceramic ring including a second ceramic sub-disk, a gas duct, a lifting duct, and a ceramic ring wall by a slip casting process, wherein the upper portion of the ceramic ring wall is connected to the circumferential edge of the second ceramic sub-disk, and the gas duct and the lifting duct are fixed on the second ceramic sub-disk;

[0015] S13, grinding the upper surface of the second ceramic sub-disk to expose the top of the gas duct and the lifting duct, so that the gas duct and the lifting duct penetrate the second ceramic sub-disk from top to bottom;

[0016] S14, placing the first ceramic sub-disk on the second ceramic sub-disk for lamination and pressing, and connecting the first ceramic sub-disk and the ceramic ring to form a ceramic cover intermediate through debinding, sintering, and annealing processes;

[0017] S15. Position and drill holes in the first ceramic sub-disk located on the upper layer of the intermediate body of the ceramic cover to form a gas through hole and a lifting through hole. The gas through hole is connected with the gas channel to form the gas sleeve, and the lifting through hole is connected with the lifting channel to form the lifting sleeve to obtain the ceramic cover.

[0018] Optionally, during the process of coating the colloid on the metal base, a reserved space is formed in the circumferential direction of the top ends of the gas channel and the lifting channel on the upper surface of the metal base, and the reserved space is an area where the glue is not applied.

[0019] Optionally, the ceramic cover is formed in one step by 3D printing.

[0020] Compared with the prior art, the electrostatic chuck and the manufacturing method thereof provided by the present invention have at least the following beneficial effects: by providing an integrally formed ceramic cover, the sides of the bonding layer and the metal base and the gas channel and the lifting channel in the metal base are effectively sealed and protected, thereby achieving sealing and isolation of electricity and gas, effectively preventing plasma from corroding the bonding layer and the metal base from the side, and reducing the contact between the plasma in the gas channel and the lifting channel and the bonding layer around the hole, thereby avoiding the corrosion of the bonding layer by plasma and causing uneven heat conduction, leakage of reaction gas, arc discharge and other undesirable phenomena, thereby greatly improving the service life of the electrostatic chuck. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a cross-sectional view of an electrostatic chuck of the present invention;

[0022] Figure 2 is an enlarged schematic diagram of a ceramic cover in an electrostatic chuck of the present invention;

[0023] Figure 3 is a cross-sectional view of another electrostatic chuck of the present invention;

[0024] Figure 4 is a cross-sectional view of another electrostatic chuck of the present invention;

[0025] Figure 5 The present invention is a schematic flow chart of a method for manufacturing a ceramic cover in an electrostatic chuck. DETAILED DESCRIPTION

[0026] The following will be combined with the attached embodiment of the present invention Figure 1 ~Attached Figure 5 , the technical solutions, structural features, objectives achieved and effects in the embodiments of the present invention are described in detail.

[0027] It should be noted that the drawings are in a very simplified form and use non-precise proportions. They are only used to conveniently and clearly assist in explaining the embodiments of the present invention, and are not used to limit the conditions for the implementation of the present invention. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0028] It should be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0029] In order to reduce the erosion of the bonding layer and the metal base of the electrostatic chuck by plasma, an embodiment of the present invention provides an electrostatic chuck 100, such as Figure 1 and Figure 2As shown, it includes: a metal base 101, which is provided with a plurality of gas channels 111 and a lifting channel 112; the bottom end of the gas channel 111 is connected to a gas source (not shown) for conveying heat-conducting gas to the lower surface of the wafer substrate; a lifting pin (PIN) is provided in the lifting channel 112, and the lifting pin moves up and down along the lifting channel 112 to drive the wafer substrate to move in the vertical direction; a ceramic cover 103, which is provided on the metal base 101; a bonding layer 102, which is provided between the metal base 101 and the ceramic cover 102, and is used to bond the ceramic cover 103 and the metal base 101; wherein the ceramic cover 103 includes: a ceramic disk 131, which is located above the metal base 101, The ceramic disk 131 is provided with a gas sleeve 133 and a lifting sleeve 134 which pass through the upper and lower surfaces of the ceramic disk; the gas sleeve 133 passes through the bonding layer 102 to communicate with the gas channel 111; the lifting sleeve 134 passes through the bonding layer 102 to communicate with the lifting channel 112; the ceramic ring 132, the upper part of which is connected to the circumferential edge of the ceramic disk 131, and the lower part is arranged around the circumference of the bonding layer 102 and the metal base 101, covering the side walls of the bonding layer 102 and the metal base 101, so as to form a sealing protection for the sides of the bonding layer 102 and the metal base 101, effectively preventing plasma from corroding the bonding layer 102 and the metal base 101 from the side, thereby improving the service life of the electrostatic suction cup.

[0030] Among them, in this embodiment, if Figure 1 As shown, the upper part of the metal base 101 is provided with a step 117 in the circumferential direction. When the ceramic cover 103 is provided on the metal base 101, the lower part of the ceramic ring 132 covers the side wall of the bonding layer 102 and the upper step 117 of the metal base 101. The lower part height of the ceramic ring 132 is equal to the sum of the thickness of the bonding layer 102 and the height of the upper step 117 of the metal base 101. The connection between the bonding layer 102 and the metal base 101 is sealed and protected by the lower part of the ceramic ring 132, thereby avoiding plasma bombardment and erosion of the bonding layer 102 and the step of the metal base 101. The metal base 101 is also provided with a coolant flow channel 113 for controlling the temperature of the metal base 101.

[0031] Among them, Figure 1As shown, the ceramic plate 131 is provided with an electrostatic adsorption electrode 1311 and a heating electrode 1312; the electrostatic adsorption electrode 1311 is used to provide an electrostatic adsorption force to adsorb and fix the wafer substrate; the heating electrode 1312 is used to heat the wafer substrate. The gas sleeve 133 is staggered with the electrostatic adsorption electrode 1311 and the heating electrode 1312; the lifting sleeve 134 is staggered with the electrostatic adsorption electrode 1311 and the heating electrode 1312 to achieve mutual isolation of the gas path and the circuit in the electrostatic chuck 100.

[0032] Further, if Figure 1 As shown, the bottom end of the gas sleeve 133 at least partially extends into the gas channel 111, and a first sealing ring 115 is provided between the gas sleeve 133 and the gas channel 111; the bottom end of the lifting sleeve 134 at least partially extends into the lifting channel 112, and a second sealing ring 116 is provided between the lifting sleeve 134 and the lifting channel 112. By extending the bottom ends of the gas sleeve 133 and the lifting sleeve 134 into the corresponding gas channel 111 and the lifting channel 112 in the metal base 101, the gas sleeve 133 and the lifting sleeve 134 directly pass through the bonding layer 102 and enter the metal base 101, thereby improving the sealing performance of the gas channel 111 and the lifting channel 112 between the bonding layer 102 and the metal base 101, and effectively preventing the plasma in the gas channel 111 and the lifting channel 112 from contacting the bonding layer 102 around the hole, thereby avoiding the corrosion of the bonding layer 102 by the plasma and causing uneven heat conduction, leakage of reaction gas, arc discharge and other undesirable phenomena.

[0033] Alternatively, if Figure 2 As shown, the wall thickness range d1 of the ceramic ring 132 is 0.1 to 10 mm; the wall thickness range of the gas sleeve 133 is 0.1 to 5 mm; the wall thickness range of the lifting sleeve 134 is 0.1 to 5 mm. Within the above-mentioned wall thickness range, a better sealing effect can be achieved, and the production cost can be saved while effectively blocking plasma erosion. Furthermore, the diameter of the gas sleeve 133 is smaller than the diameter of the lifting sleeve 134. As an optional embodiment, the diameter range of the gas sleeve 133 is 0.05 to 1 mm, and the diameter range of the lifting sleeve 134 is 1 to 5 mm.

[0034] In order to achieve a better sealing effect, in this embodiment, the ceramic disk 131, the gas sleeve 133, the lifting sleeve 134 and the ceramic ring 132 are formed by co-firing in one piece, which greatly improves the sealing and connection strength between the ceramic disk 131 and the ceramic ring 132, the gas sleeve 133 and the lifting sleeve 134.

[0035] In another embodiment, if Figure 3 As shown, the lower portion of the ceramic ring 132 is also provided with an extension portion 1321 vertically arranged with the ceramic ring 132, and the extension portion 1321 extends radially outward along the metal base to cover the upper surface of the step 117 of the metal base 101, thereby reducing the erosion of the plasma on the upper surface of the step 117 of the metal base 101 and extending the service life of the electrostatic suction cup 100.

[0036] In yet another embodiment, Figure 4 As shown, the top of the metal base 201 is in the same plane, that is, there is no step on the top edge of the metal base 201. In this embodiment, the lower part of the ceramic ring 232 completely covers the side walls of the metal base 201 and the side walls of the bonding layer 102, thereby preventing plasma from corroding the bonding layer 102 and the metal base 201 from the side, thereby increasing the service life of the electrostatic suction cup.

[0037] The present invention also provides a method for manufacturing an electrostatic chuck, which is applicable to the electrostatic chuck described in any of the above embodiments. Figure 1 Taking the electrostatic chuck 100 shown as an example, it includes the following steps: S1, preparing the ceramic cover 103 by tape casting and slip casting; S2, providing a metal base 101, coating the metal base 101 with colloid to form the bonding layer 102; S3, aligning the gas sleeve 133 and the lifting sleeve 134 of the ceramic cover 103 with the gas channel 111 and the lifting channel 112 on the metal base 101 respectively, and then pressing the ceramic cover 103 and the metal base 101 to complete the manufacture of the electrostatic chuck 100. In other embodiments, the preparation of the ceramic cover 103 described in S1 can be formed in one step by 3D printing to improve manufacturing efficiency.

[0038] Among them, in this embodiment, the metal base 101 provided in step S2 is a general metal aluminum base, and the gas channel 111 and the lifting channel 112 in the metal base 101 are respectively pre-buried with a first sealing ring 115 and a second sealing ring 116 to improve the connection sealing between the ceramic cover 103 and the metal base 101. In other embodiments, metal bases made of other metal materials can also be used.

[0039] Further, if Figure 5 As shown, the ceramic cover 103 is prepared by tape casting and slip casting as described in step S1, which specifically includes the following steps:

[0040] S11, manufacturing the first ceramic sub-disk 1031 by a tape-casting process; wherein the tape-casting process comprises preparing a slurry, tape-casting a first raw tape, cutting the first raw tape, and using screen printing to print an electrostatic adsorption electrode pattern; similarly, screen printing a heating electrode pattern on a second raw tape; and then laminating and pressing the first raw tape and the second raw tape together in order to form a sandwich structure, such as Figure 5 As shown in (a);

[0041] S12, manufacturing a ceramic ring 132 comprising a second ceramic sub-disk 1032, a gas duct 1033, a lifting duct 1034, and a ceramic ring wall 1037 through a slip casting process, wherein the upper portion of the ceramic ring wall 1037 is connected to the circumferential edge of the second ceramic sub-disk 1032, and the gas duct 1033 and the lifting duct 1034 are fixed on the second ceramic sub-disk 1032; wherein the slip casting process comprises preparing a mold comprising the second ceramic sub-disk 1032, the gas duct 1033, the lifting duct 1034, and the ceramic ring wall 1037, configuring slurry, pouring the slurry into the mold, drying it, and then demolding it to obtain the above-mentioned ceramic ring 132, such as Figure 5 As shown in (b);

[0042] S13, grinding the upper surface of the second ceramic sub-disk 1032 to expose the top of the gas channel 1033 and the lifting channel 1034, so that the gas channel 1033 and the lifting channel 1034 penetrate the second ceramic sub-disk 1032 from top to bottom;

[0043] S14, placing the first ceramic sub-disk 1031 on the second ceramic sub-disk 1032 for lamination and pressing, and connecting the first ceramic sub-disk 1031 and the ceramic ring 1032 to form a ceramic cover intermediate 136 through debinding, sintering, and annealing processes, as shown in FIG. Figure 5 As shown in (c);

[0044] S15, positioning and drilling the first ceramic sub-disk 1031 located on the upper layer of the ceramic cover intermediate body 136 to form a gas through hole 1035 and a lifting through hole 1036, wherein the gas through hole 1035 is connected with the gas channel 1033 to form the gas sleeve 133, and the lifting through hole 1036 is connected with the lifting channel 1034 to form the lifting sleeve 134, and finally the ceramic cover 103 is obtained. Figure 5 As shown in (d) in the figure. Further, after the ceramic cover 103 is obtained, the surface of the ceramic cover 103 is finely processed by grinding, polishing, etc. to reach a predetermined size.

[0045] Optionally, the ceramic cover 103 is made of Al2O3, AlN, Si3N4, Y2O3 and composite ceramics thereof; the electrostatic adsorption electrode 1311 is made of W, Mo, Pd, Pt, Au, Ag, Ni, Cu and other metal single substances and their alloys; the heating electrode 1312 is made of W, Mo, Pd, Pt, Au, Ag, Ni, Cu and other metal single substances and their alloys. The metal base 101 is made of Al, stainless steel and its alloys.

[0046] Further, in the process of coating the colloid on the metal base 101, as Figure 1 As shown, a reserved space 114 is formed circumferentially at the top of the gas channel 111 and the lifting channel 112 on the upper surface of the metal base 101. The reserved space 114 is a non-glue-brushed area, that is, a plurality of through holes are formed on the bonding layer 102, and the through holes are respectively aligned with the gas channel 111 and the lifting channel 112 to prevent glue from overflowing into the gas channel 111 or the lifting channel 112 during the bonding and positioning. The bonding layer 102 is made of thermal conductive silicone, epoxy resin, PI (polyimide), PTFE (polytetrafluoroethylene), etc. and mixed materials thereof.

[0047] Specifically, the pressing process described in step S3 includes the following steps: placing the metal base 101 coated with the bonding layer 102 on the lower pressing plate of the hot press, aligning the gas sleeve 133 and the lifting sleeve 134 of the ceramic cover 103 with the gas channel 111 and the lifting channel 112 on the metal base 101 respectively and fixing them on the upper pressing plate, evacuating 0.5 to 90 kPa, moving the upper and lower pressing plates to fit them together, applying a pressure of 0.5 to 50 tons, heating and curing at 60-150°C for 1 to 4 hours, and the manufacture of the electrostatic suction cup 100 is completed.

[0048] In summary, the present invention provides an electrostatic suction cup and a method for manufacturing the same, which effectively seals and protects the sides of the bonding layer 102 and the metal base 101 and the gas channel 111 and the lifting channel 112 in the metal base 101 by setting an integrally formed ceramic cover 103, thereby achieving electrical and gas sealing and isolation, effectively preventing plasma from corroding the bonding layer 102 and the metal base 101 from the side, and reducing the contact between the plasma in the gas channel 111 and the lifting channel 112 and the bonding layer 102 around the hole, thereby avoiding the occurrence of undesirable phenomena such as uneven heat conduction, reaction gas leakage, arc discharge, etc. caused by the corrosion of the bonding layer 102 by plasma, and greatly improving the service life of the electrostatic suction cup 100.

[0049] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. An electrostatic chuck, characterized in that: include: A metal base having a plurality of gas passages and lifting passages therein; A ceramic cover, which is arranged on the metal base; A bonding layer, which is disposed between the metal base and the ceramic cover and is used to connect the ceramic cover and the metal base; The ceramic cover comprises: a ceramic disk, which is located above the metal base, and the ceramic disk is provided with a gas sleeve and a lifting sleeve penetrating the upper surface and the lower surface of the ceramic disk; The gas sleeve passes through the bonding layer and is connected to the gas channel; the lifting sleeve passes through the bonding layer and is connected to the lifting channel; the ceramic ring, whose upper part is connected to the circumferential edge of the ceramic disk, and whose lower part is arranged around the circumference of the bonding layer and the metal base, covering the side walls of the bonding layer and the metal base.

2. The electrostatic chuck according to claim 1, wherein: The upper surface of the metal base is provided with steps in the circumferential direction, and the height of the lower part of the ceramic ring is equal to the sum of the thickness of the bonding layer and the step height of the metal base.

3. The electrostatic chuck according to claim 1, wherein: The bottom end of the gas sleeve at least partially extends into the gas channel, and a first sealing ring is provided between the gas sleeve and the gas channel; the bottom end of the lifting sleeve at least partially extends into the lifting channel, and a second sealing ring is provided between the lifting sleeve and the lifting channel.

4. The electrostatic chuck according to claim 1, wherein: The wall thickness of the ceramic ring is in the range of 0.1 to 10 mm; the wall thickness of the gas sleeve is in the range of 0.1 to 5 mm; and the wall thickness of the lifting sleeve is in the range of 0.1 to 5 mm.

5. The electrostatic chuck according to claim 1, wherein: The ceramic disc, the gas sleeve, the lifting sleeve and the ceramic ring are formed by co-firing in one piece.

6. The electrostatic chuck according to claim 2, wherein: The lower part of the ceramic ring is also provided with an extension part which is arranged perpendicularly to the ceramic ring. The extension part extends outwardly in the radial direction of the metal base to cover the stepped upper surface of the metal base.

7. A method for manufacturing an electrostatic chuck, applicable to the electrostatic chuck according to any one of claims 1 to 6, characterized in that: include: The ceramic cover is prepared by tape casting and slip casting; Providing a metal base, and coating a colloid on the metal base to form the bonding layer; After aligning the gas sleeve and the lifting sleeve of the ceramic cover with the gas channel and the lifting channel on the metal base, the ceramic cover and the metal base are pressed together to complete the manufacture of the electrostatic chuck.

8. The manufacturing method according to claim 7, characterized in that: The ceramic cover is prepared by tape casting and slip casting, and specifically comprises the following steps: S11, manufacturing a first ceramic sub-disk by a tape-casting process; S12, manufacturing a ceramic ring including a second ceramic sub-disk, a gas duct, a lifting duct, and a ceramic ring wall by a slip casting process, wherein the upper portion of the ceramic ring wall is connected to the circumferential edge of the second ceramic sub-disk, and the gas duct and the lifting duct are fixed on the second ceramic sub-disk; S13, grinding the upper surface of the second ceramic sub-disk to expose the top of the gas duct and the lifting duct, so that the gas duct and the lifting duct penetrate the second ceramic sub-disk from top to bottom; S14, placing the first ceramic sub-disk on the second ceramic sub-disk for lamination and pressing, and connecting the first ceramic sub-disk and the ceramic ring to form a ceramic cover intermediate through debinding, sintering, and annealing processes; S15. Position and drill holes in the first ceramic sub-disk located on the upper layer of the intermediate body of the ceramic cover to form a gas through hole and a lifting through hole. The gas through hole is connected with the gas channel to form the gas sleeve, and the lifting through hole is connected with the lifting channel to form the lifting sleeve to obtain the ceramic cover.

9. The manufacturing method according to claim 7, characterized in that: During the process of coating the colloid on the metal base, a reserved space is formed in the circumferential direction of the top ends of the gas channel and the lifting channel on the upper surface of the metal base, and the reserved space is an area where the colloid is not applied.

10. The manufacturing method according to claim 7, characterized in that: The ceramic cover is formed in one step by 3D printing.

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