Bearing device, semiconductor process chamber and control method of bearing device

Abstract

The invention provides a bearing device which is used for bearing a wafer in a semiconductor process chamber. The bearing device comprises a bearing body, the bearing body comprises a bearing surface for bearing a wafer, the bearing body is provided with a first gas through hole, and the first gas through hole is used for transmitting back blowing gas to the position between the bearing surface and the wafer arranged on the bearing surface; the blocking piece can do lifting motion relative to the bearing body so as to move to an avoiding position or a blocking position; when the blocking piece moves to the blocking position, the blocking piece is located in the first gas through hole, and the top face, facing the wafer, of the blocking piece is not lower than the plane where an opening, facing the wafer, of the first gas through hole is located. And when the blocking piece moves to the avoiding position, the blocking piece is separated from the first gas through hole. According to the bearing device, the pressure of the back blowing gas between the wafer and the bearing surface can be ensured, the probability of the sparking phenomenon of the bearing body can be reduced, and the service life of the bearing body is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a carrier device, a semiconductor process chamber and a control method for the carrier device. Background Art

[0002] An electrostatic chuck (ESC) is a device that uses electrostatic adsorption to fix the wafer, while controlling the surface temperature of the wafer and providing a DC bias voltage for the wafer.

[0003] The electrostatic chuck is used to carry the feed of RF power, and the semiconductor production process requires a very high RF power plasma. The increased RF power leads to an increase in the RF current and the total voltage applied to the electrostatic chuck. At the same time, the plasma etching process requires a significantly lower RF frequency than required in the past. The low RF frequency leads to an additional increase in the RF voltage applied to the entire ESC ceramic. The high voltage applied to the entire ceramic can cause electrical discharge (arcing) between the wafer and the substrate or ignition (sparking) of the heat conductive gas (such as He) in the gas supply hole. The arc discharge of the ESC usually causes catastrophic damage to the components, which is accompanied by wafer damage, possible damage to other components, and interruption of the production process. In the case of ignition of the heat conductive gas (position of the edge of the helium hole), damage to the electrostatic chuck and the wafer will result, increasing the cost of the equipment.

[0004] Generally, the probability of ignition is reduced by reducing the size of the pores. However, due to the limitations of mechanical processing technology, the pore size cannot be processed too small, resulting in a high probability of ignition in the electrostatic chuck. Moreover, if the pores are too small, the gas flow to the wafer will be too small, thereby reducing the thermal conductivity of the gas to the wafer. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a carrier device, a semiconductor process chamber and a control method for the carrier device, which can reduce the probability of sparking of the carrier body and increase the service life of the carrier body.

[0006] In order to achieve the purpose of the present invention, a carrying device is provided for carrying wafers in a semiconductor process chamber, the carrying device comprising: a carrying body, comprising a carrying surface for carrying the wafers, the carrying body being provided with a first gas through hole, the first gas through hole being used to transmit back-blowing gas to between the carrying surface and the wafer placed on the carrying surface; a blocking member, the blocking member being able to perform lifting and lowering motion relative to the carrying body so as to be able to move to an avoidance position or a blocking position; wherein, when the blocking member moves to the blocking position, the blocking member is located in the first gas through hole, and the top surface of the blocking member facing the wafer is not lower than the plane where the opening of the first gas through hole facing the wafer is located; when the blocking member moves to the avoidance position, the blocking member is separated from the first gas through hole.

[0007] Furthermore, it also includes a control device, which includes: a voltage detector for obtaining the actual voltage value on the carrying surface; a controller connected to the voltage detector, the controller is used to compare the actual voltage value with the breakdown voltage value at the first gas through hole on the carrying body, and when the actual voltage value is greater than the breakdown voltage value, control the blocking member to rise to the blocking position.

[0008] Furthermore, the control device also includes: a pressure detector, used to obtain the actual gas pressure value between the carrying surface and the wafer placed on the carrying surface; wherein, the controller is also used to connect with the pressure detector, and the controller is used to compare the actual gas pressure value with the pre-stored preset pressure value, and when the actual gas pressure value is less than the preset pressure value, drive the blocking member to move to the avoidance position.

[0009] Furthermore, the control device also includes a height detector for detecting the height position of the blocking member; the controller is also connected to the height detector, and the controller is also used to compare the height position of the blocking member with the blocking position or the avoidance position, and adjust the height position of the blocking member according to the comparison result so that the blocking member is located in the blocking position or the avoidance position.

[0010] Furthermore, the blocking member includes a first cylinder and a second cylinder, the second cylinder is located above the first cylinder and connected thereto, and the diameter of the first cylinder is greater than the diameter of the second cylinder; wherein, when the blocking member rises to the blocking position, the second cylinder is located in the first gas through hole, and the top surface of the second cylinder facing the wafer is not lower than the plane where the opening of the first gas through hole facing the wafer is located; when the blocking member descends to the avoidance position, the second cylinder is separated from the first gas through hole.

[0011] Furthermore, the axial length of the second column is greater than or equal to the axial depth of the first gas through hole.

[0012] Furthermore, the upper end surface of the first cylinder has an annular area surrounding the second cylinder; when the blocking member rises to the blocking position, the annular area fits with the surface of the supporting body away from the supporting surface.

[0013] Furthermore, the blocking member is made of a rigid material; the second column and the first gas through hole are clearance-matched, and the clearance between the first gas through hole and the second column is greater than or equal to 0.05 mm and less than or equal to 0.1 mm.

[0014] Furthermore, the blocking member is made of elastic material, and the second column and the first gas through hole are in interference fit.

[0015] Furthermore, the supporting device also includes: a base, which is stacked vertically below the supporting body, and the base is provided with a second gas through hole, which is connected to the first gas through hole and is used to transmit the back-blowing gas to between the supporting surface and the wafer together with the first gas through hole.

[0016] Furthermore, the carrier body is provided with a plurality of first gas through holes, the base is provided with a plurality of second gas through holes, and the carrier device includes a plurality of blocking members; the number of the first gas through holes, the number of the second gas through holes and the number of the blocking members are the same, and they are arranged in a one-to-one correspondence.

[0017] Furthermore, it also includes: a connecting member, which is arranged on a side of the base away from the carrier body, and the connecting member and the base are spaced apart to form a closed gap between the connecting member and the base, and the closed gap is used to transmit the back-blowing gas to the second gas through hole.

[0018] Furthermore, it also includes: an air intake structure, which penetrates the connecting piece to the closed gap, and is used to transmit the back-blowing gas in the gas source to the closed gap.

[0019] Furthermore, a connecting hole for the blocking member to pass through is provided on the connecting member, and a sealing member is provided between the connecting hole and the blocking member.

[0020] Furthermore, it also includes a driving device for driving the blocking member to perform lifting and lowering movements relative to the supporting body; the driving device includes: a transmission member, which is arranged on the other side of the connecting member away from the base, and the transmission member is connected to the blocking member; a driving member, which is connected to the transmission member and is used to drive the transmission member to perform lifting and lowering movements.

[0021] The present invention further provides a semiconductor process chamber, comprising: a chamber; and the above-mentioned carrying device, which is arranged in the chamber.

[0022] The present invention also provides a control method for a carrying device, which is used to control the above-mentioned carrying device, and the control method includes: moving the blocking member to an avoidance position, and introducing back-blowing gas between the carrying surface of the carrying body and the wafer; obtaining the actual voltage value of the carrying surface; obtaining the breakdown voltage value at the first gas through hole on the carrying body; judging whether the actual voltage value is greater than the breakdown voltage value; if the judgment result is yes, driving the blocking member to rise to the blocking position to increase the breakdown voltage value at the first gas through hole on the carrying body; if the judgment result is no, keeping the blocking member in the avoidance position.

[0023] Furthermore, the control method also includes: obtaining an actual gas pressure value between the carrying surface and the wafer; when the blocking member is in the blocking position, determining whether the actual gas pressure is less than a pre-stored preset pressure value; if the determination result is yes, driving the blocking member to descend to the avoidance position, and adding back-blowing gas between the carrying surface and the wafer to increase the actual gas pressure value between the carrying surface and the wafer; if the determination result is no, maintaining the blocking member in the blocking position.

[0024] The present invention has the following beneficial effects:

[0025] The support device provided by the present invention includes a support body, and the support body is used to support a wafer. A first gas through hole is provided on the support body, so as to pass back-blowing gas between the support surface of the support body and the wafer through the first gas through hole. Since the high voltage applied to the support body may cause ignition at the first gas through hole, in order to reduce the probability of its occurrence, the support base of the present invention also includes a blocking member. The blocking member can be lifted and lowered relative to the support body so as to be able to move to an avoidance position or a blocking position. When the blocking member moves to the blocking position, the blocking member is located in the first gas through hole, and the top surface of the blocking member facing the wafer is not lower than the plane where the opening of the first gas through hole facing the wafer is located. Compared with the related art in which the pores on the support body are shrunk to reduce the space inside the pores, the support device of this embodiment is not subject to processing restrictions. By extending the blocking member into the first gas through hole, it is equivalent to reducing the maximum spacing between the inner wall of the first gas through hole. In addition, considering the gas pressure between the bearing surface and the wafer, the blocking member can also move from the blocking position to the avoidance position, and the blocking member is separated from the first gas through hole to achieve normal flow of the back-blowing gas, that is, to ensure the pressure of the back-blowing gas between the wafer and the bearing surface, and to achieve normal and efficient heat conduction of the wafer. The bearing device of the present invention can not only ensure the pressure of the back-blowing gas between the wafer and the bearing surface, but also reduce the probability of ignition of the bearing body, thereby increasing the service life of the bearing body.

[0026] Other objects and features of the present invention will become apparent by reading the specification, claims and drawings of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0028] Figure 1 It is a structural schematic diagram of a carrying device in the related art.

[0029] Figure 2 It is a structural schematic diagram of a carrier device according to an embodiment of the present invention carrying a wafer, and a blocking member being located at a blocking position.

[0030] Figure 3 It is a structural schematic diagram of a carrier device according to an embodiment of the present invention carrying a wafer, and a blocking member being located at an avoidance position.

[0031] Figure 4 yes Figure 3 A partial enlarged view of .

[0032] Figure 5 are the Paschen's law curves for 5 different back-purge gases.

[0033] Figure 6 FIG. 1 is a bottom view of the interior of a semiconductor process chamber according to an embodiment of the present invention.

[0034] Description of main component symbols:

[0035] 1. Matrix; 2. Electrostatic chuck; 3. Air hole;

[0036] 10. semiconductor process chamber; 200. cavity; 20. wafer;

[0037] 100. Carrying device;

[0038] 110. Carrying body; 111. First gas through hole;

[0039] 120. blocking member; 121. first column; 122. second column;

[0040] 130. base; 131. bearing surface; 132. second gas through hole;

[0041] 140. Pressure detector;

[0042] 150, connector; 151, closed gap;

[0043] 160. Seals;

[0044] 170, driving device; 171, transmission member; 1711, mounting point; 172, driving member;

[0045] 180, limit protection parts;

[0046] 300, upper electrode;

[0047] 410, focusing ring; 420, base ring; 430, guard ring; 440, insulation ring; 450, grounding ring;

[0048] 500, air intake structure; 510, gas connection piece; 520, gas connection pipe;

[0049] 610. Three-needle mechanism; 620. Three-needle motor. DETAILED DESCRIPTION

[0050] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0051] Figure 1 It is a structural schematic diagram of a load-bearing device in the related art. Figure 1 , the supporting base in the related art includes a substrate 1 and an electrostatic chuck 2. The substrate 1 and the electrostatic chuck 2 are provided with air holes 3, and the air holes 3 are used to transmit gas between the upper surface of the electrostatic chuck 2 and the lower surface of the wafer. Since the electrostatic chuck 2 can be used to carry the input of radio frequency power, the electrostatic chuck 2 will form a bias, which is easy to cause arc ignition at the position of the air hole 3, thereby causing damage to the electrostatic chuck 2 itself and the wafer carried by the electrostatic chuck 2, resulting in frequent replacement of the electrostatic chuck 2 and the wafer, which increases the cost of the semiconductor process chamber.

[0052] In order to solve this technical problem, the related art adopts a method of reducing the size of the air hole 3. However, due to the limitation of the mechanical processing technology, the diameter of the air hole 3 cannot be processed to less than 0.5 mm. That is, there is still a gap of the air hole 3 on the electrostatic chuck 2, which still causes the arc ignition phenomenon at this point in the carrying device.

[0053] In order to solve the above technical problems, the present application proposes a carrying device 100, which can effectively reduce the probability of ignition of the carrying device 100.

[0054] The carrier 100 is used to carry a wafer 20 in a semiconductor process chamber 10. The carrier 100 includes a carrier body 110 and a blocking member 120. The carrier body 110 includes a carrier surface 131 for carrying the wafer 20. The carrier body 110 may be an electrostatic chuck, a mechanical chuck, or a chuck of other structures.

[0055] The carrier body 110 is provided with a first gas through hole 111 , and the first gas through hole 111 is used to transmit the back-blowing gas to between the carrier surface 131 and the wafer 20 placed on the carrier surface 131 .

[0056] It should be noted that the carrying surface 131 refers to the upper surface of the carrying body 110, that is, the upper surface of the carrying body 110 facing the wafer 20. When the carrying body 110 is used to carry the wafer 20, the edge of the carrying surface 131 fits with the bottom surface of the wafer 20, so that the sealing between the carrying surface 131 and the wafer 20 in the circumferential direction of the wafer 20 can be achieved to prevent the back-blowing gas from leaking. There is a space for gas circulation between the carrying surface and the wafer, and the space is connected to the first gas through hole 111, so that the back-blowing gas can be supplemented to the above space through the first gas through hole 111.

[0057] The blocking member 120 can be lifted and lowered relative to the supporting body 110 to move to a avoiding position or a blocking position.

[0058] Figure 2 1 is a structural schematic diagram of the carrier device 100 according to the embodiment of the present invention carrying the wafer 20 and the blocking member 120 being located at the blocking position. Figure 2 When the blocking member 120 moves to the blocking position, the blocking member 120 is located in the first gas through hole 111, and the top surface of the blocking member 120 facing the wafer 20 is not lower than the plane where the opening of the first gas through hole 111 facing the wafer 20 is located.

[0059] Figure 3 It is a structural schematic diagram of the carrier device 100 according to the embodiment of the present invention carrying the wafer 20 and the blocking member 120 being located at the avoidance position. Figure 4 yes Figure 3 See Figure 3 and Figure 4 When the blocking member 120 moves to the avoidance position, the blocking member 120 is separated from the first gas through hole 111 .

[0060] When the blocking member 120 moves to the blocking position, the blocking member 120 is located in the first gas through hole 111, and the top surface of the blocking member 120 facing the wafer 20 is not lower than the plane where the opening of the first gas through hole 111 facing the wafer 20 is located. Compared with the related art in which the pores on the carrier body are shrunk to reduce the maximum spacing of the inner pore walls of the pores, the carrier device of this embodiment is not subject to processing restrictions, and the maximum spacing of the inner pore walls of the first gas through hole 111 is reduced by extending the blocking member 120 into the first gas through hole 111. In addition, considering the normal gas pressure between the carrier surface 131 and the wafer 20 when the wafer 20 is adsorbed, the blocking member 120 can also move from the blocking position to the avoidance position, at which time the blocking member 120 is separated from the first gas through hole 111, so as to realize the normal flow of the back-blowing gas, that is, to ensure the pressure of the back-blowing gas between the wafer 20 and the carrier surface 131, and realize the normal and efficient heat conduction of the wafer 20. The carrier device 100 of the present invention can not only ensure the pressure of the back-blowing gas between the wafer 20 and the carrier surface 131 , but also reduce the probability of ignition of the carrier body 110 , thereby increasing the service life of the carrier body 110 .

[0061] The carrying device 100 further includes a control device, which can control the lifting and lowering movement of the blocking member 120. The control device includes a voltage detector and a controller.

[0062] The voltage detector is used to obtain the actual voltage value on the bearing surface. The controller is connected to the voltage detector, and the controller is used to compare the actual voltage value with the breakdown voltage value at the first gas through hole 111 on the bearing body 110, and when the actual voltage value is greater than the breakdown voltage value, control the blocking member 120 to rise to the blocking position.

[0063] It should be noted that Figure 5 are the Paschen's law curves for 5 different back-purge gases. Figure 5 According to the Paschen's law formula, the breakdown voltage value Vb at the first gas through hole 111 on the carrier body 110 is related to the gas pressure p and the maximum spacing d between the inner hole walls of the first gas through hole 111. When the actual voltage value on the carrier surface 131 is greater than the breakdown voltage value Vb calculated according to Paschen's law, it means that the voltage at the first gas through hole 111 will cause the back-blowing gas at the position of the first gas through hole 111 to be broken down, causing a spark. In other words, only when the actual voltage value on the carrier surface 131 is greater than the breakdown voltage value calculated by Paschen's law, will the spark occur at the first gas through hole 111 (when the actual voltage value on the carrier surface 131 is less than or equal to the breakdown voltage value calculated by Paschen's law, the carrier body 110 will not experience a spark).

[0064] Paschen's law formula:

[0065]

[0066] Where: γse is the secondary electron emission coefficient, which is related to the material;

[0067] A is the coefficient;

[0068] Vb is the breakdown voltage;

[0069] p is the air pressure;

[0070] d is the maximum spacing between the inner walls of the first gas through holes 111 .

[0071] When the actual voltage value on the bearing surface 131 is less than or equal to the breakdown voltage value Vb at the first gas through hole 111, no sparking will occur at the first gas through hole 111. It can also be understood that when the actual voltage value on the bearing surface 131 is less than or equal to the breakdown voltage value Vb at the first gas through hole 111, the above technical problem does not exist. Therefore, under the premise that the above technical problem does not exist, the blocking member 120 can be controlled to move to the avoidance position, so that the back-blowing gas can flow normally through the first gas through hole 111 to the gap between the bearing surface 131 and the wafer 20.

[0072] When the actual voltage value on the bearing surface 131 is greater than the breakdown voltage value at the first gas through hole 111, a sparking phenomenon will occur at the first gas through hole 111. It can also be understood that when the actual voltage value on the bearing surface 131 is greater than the breakdown voltage value at the first gas through hole, the above technical problem exists, and at this time, the breakdown voltage value at the first gas through hole 111 can be increased by controlling the blocking member 120 to move to the blocking position to avoid the sparking phenomenon at the first gas through hole 111.

[0073] The control device further includes a pressure detector 140. The pressure detector 140 is used to obtain the actual gas pressure value between the carrying surface 131 and the wafer 20 placed on the carrying surface 131. Figure 2 and Figure 3 The pressure detector 140 may be disposed in the carrier body 110. The controller is also used to connect with the pressure detector, and the controller is used to compare the actual gas pressure value with the pre-stored preset pressure value, and when the actual gas pressure value is less than the preset pressure value, drive the blocking member 120 to move to the avoidance position.

[0074] In some embodiments, the preset pressure value may be greater than or equal to 28 Torr and less than or equal to 32 Torr. Preferably, the preset pressure value is 30 Torr.

[0075] Since part of the blocking member 120 is located inside the carrier body 110 when the blocking member 120 is lifted, the position of the blocking member 120 cannot be observed by naked eyes. In order to determine whether the blocking member 120 has accurately reached the blocking position or the avoidance position, the control device further includes a height detector, which detects the height position of the blocking member 120. The controller is also connected to the height detector, and the controller is also used to compare the height position of the blocking member 120 with the blocking position or the avoidance position, and adjust the height position of the blocking member 120 according to the comparison result, so that the blocking member 120 is located at the blocking position or the avoidance position.

[0076] In some embodiments, the height detector includes an optical sensor, and the optical sensor is used to sense the height position of the blocking member 120. Of course, the height detector can also be other instruments that can obtain the height of the blocking member 120.

[0077] See also Figure 4 The blocking member 120 includes a first column 121 and a second column 122 connected thereto.

[0078] The second column 122 is located above the first column 121 , and the diameter of the first column 121 is greater than the diameter of the second column 122 .

[0079] When the blocking member 120 rises to the blocking position, the second column 122 is located in the first gas through hole 111, and the top surface of the second column 122 facing the wafer 20 is not lower than the plane where the opening of the first gas through hole 111 facing the wafer 20 is located. When the blocking member 120 descends to the avoidance position, the second column 122 is separated from the first gas through hole 111.

[0080] In particular, the axial length of the second column 122 is greater than or equal to the axial depth of the first gas through hole 111 .

[0081] In some embodiments, the blocking member 120 may be made of an elastic material, such as PTFE, and the second column 122 and the first gas hole 111 may be interference fit to facilitate installation of the second column 122 into the first gas hole 111, so that the maximum spacing between the inner hole walls of the first gas hole 111 is 0.

[0082] It is understandable that when the blocking member 120 is in the blocking position, the second column 122 is located in the first gas through hole 111 . Since the second column 122 and the first gas through hole 111 are in interference fit, the back-blowing gas cannot pass through the first gas through hole 111 .

[0083] In other embodiments, the blocking member 120 is made of a rigid material, and the second column 122 and the first gas through hole 111 are clearance-matched, so that the maximum spacing between the inner hole walls of the first gas through hole 111 is as small as possible even if it is not 0. Specifically, the gap between the first gas through hole 111 and the second column 122 is greater than or equal to 0.05 mm and less than or equal to 0.1 mm.

[0084] It can be understood that when the blocking member 120 is in the avoidance position, the second column 122 is separated from the first gas through hole 111, and the upper surface of the second column 122 facing the wafer 20 is lower than the lower surface of the carrier body 110 (the carrier surface 131 is the upper surface of the carrier body 110). Since there is no blocking member 120 in the first gas through hole 111, that is, the back-blowing gas can smoothly pass through the first gas through hole 111 and then flow to the gap between the carrier surface 131 and the wafer 20 placed on the carrier surface 131.

[0085] Specifically, the upper end surface of the first column 121 has an annular region surrounding the second column 122 . It can be understood that the annular region is disposed opposite to the wafer 20 .

[0086] When the blocking member 120 rises to the blocking position, the annular region fits against the surface of the supporting body 110 away from the supporting surface 131 , so as to further improve the blocking performance when the first gas through hole 111 is blocked by the second column 122 .

[0087] See also Figure 2 and Figure 3 The carrying device 100 further includes a base 130. The base 130 is stacked below the carrying body 110 in a vertical direction.

[0088] The base 130 is provided with a second gas through hole 132, which is connected to the first gas through hole 111 and is used to transmit the back-blowing gas to between the carrying surface 131 and the wafer 20 together with the first gas through hole 111. The back-blowing gas can flow to the carrying surface 131 through the second gas through hole 132 and the first gas through hole 111 in sequence.

[0089] In some embodiments, the axis of the first gas through hole 111 is collinear with the axis of the second gas through hole 132. The inner diameter of the first gas through hole 111 (the same along the radial direction) is smaller than that of the second gas through hole 132 (the same along the radial direction).

[0090] Optionally, there is a clearance fit between the first column 121 and the second gas hole 132. Since the outer diameter of the first column 121 and the outer diameter of the second column 122 are both smaller than the inner diameter of the second gas hole 132, when the blocking member 120 descends to the avoidance position, the back-blowing gas can flow into the first gas hole 111 through the gap between the second gas hole 132 and the outer surface of the blocking member 120.

[0091] The carrier body 110 is provided with a plurality of first gas through holes 111, the base 130 is provided with a plurality of second gas through holes 132, and the carrier device 100 includes a plurality of blocking members 120. The blocking members 120 are arranged along the same circumference, the center of which coincides with the center of the wafer 20, so as to provide back-blowing gas to the lower surface of the wafer 20 in the circumferential direction.

[0092] The number of the first gas through holes 111 and the number of the second gas through holes 132 are the same as the number of the blocking members 120 , and they are arranged in a one-to-one correspondence.

[0093] See also Figure 2 , Figure 3 and Figure 4 The carrier device 100 further includes a connector 150. The connector 150 is disposed on a side of the base 130 away from the carrier body 110. The connector 150 and the base 130 are spaced apart to form a sealed gap 151 between the connector 150 and the base 130. The sealed gap 151 is used to transmit the back-blowing gas to the second gas through hole 132.

[0094] The blocking member 120 is arranged to penetrate the connecting member 150. The connecting member 150 is provided with a connecting hole for the blocking member 120 to pass through. A sealing member 160 is provided between the connecting hole and the blocking member 120 to prevent leakage of the back-blowing gas.

[0095] The carrier device 100 further includes an air intake structure 500 . The air intake structure 500 is connected to an air source. The air source is used to provide back-blowing gas. The air intake structure 500 penetrates the connector 150 to the closed gap 151 , and is used to transmit the back-blowing gas in the air source to the closed gap 151 .

[0096] Specifically, the air intake structure 500 further includes a gas connector 510 and a gas connecting pipe 520. The closed gap 151 is connected to the gas connecting pipe 520 through the gas connector 510, and the gas connecting pipe 520 is connected to a gas source.

[0097] The carrying device 100 further includes a driving device 170 . The driving device 170 is used to drive the blocking member 120 to move up and down relative to the carrying body 110 .

[0098] The driving device 170 includes a transmission member 171 and a driving member 172 .

[0099] The transmission member 171 is disposed on the other side of the connecting member 150 away from the base 130, and the transmission member 171 is connected to the blocking member 120. In some embodiments, the blocking member 120 is fixedly connected to the transmission member 171. For example, it can be connected by screws or bonding, which is not specifically limited here. Specifically, the transmission member 171 is configured to be flat, and the first column 121 located at the bottom of the blocking member 120 is connected to one side of the transmission member 171.

[0100] The driving member 172 is connected to the transmission member 171, and the driving member 172 is used to drive the transmission member 171 to move up and down. The driving member 172 can use a linear servo motor (the motion accuracy of the linear servo motor can be less than or equal to 1um, and the preferred motion accuracy is 0.1um). The linear servo motor can be connected to the other side of the transmission member 171 to drive the transmission member 171 to move up and down relative to the supporting body 110 through the linear servo motor, thereby driving the blocking member 120 to move up and down synchronously. In some embodiments, the linear servo motor and the blocking member 120 are located on different sides of the transmission member 171 (for example, the blocking member 120 is located above the transmission member 171, and the linear servo motor is located below the transmission member 171, for details, please refer to Figure 2 and Figure 3 ).

[0101] In some embodiments, the base 130 is mounted on the connector 150. A cavity is designed below the connector 150 to prevent the transmission member 171 from interfering with other components during the lifting movement. In addition, the three-needle mechanism 610 can also be prevented from interfering with other components during the lifting movement.

[0102] In some embodiments, the travel distance of the blocking member 120 from the blocking position to the avoidance position is greater than or equal to 1 mm and less than or equal to 5 mm, and the travel distance of the blocking member 120 from the blocking position to the avoidance position is greater than the axial depth of the first gas through hole 111. In order to limit the extreme position of the blocking member 120, the carrier device 100 in this embodiment further includes a limit protection member 180, which can be disposed on the connecting member 150.

[0103] The transmission member 171 is provided with a connection hole for the position limiting protection member 180 to pass through. The position limiting protection member 180 passes through the connection hole and is connected to the connection member 150 . The position limiting protection member 180 can limit the extreme position of the blocking member 120 .

[0104] In some embodiments, the limit protection member 180 may be a limit pin. After the limit pin is connected to the connecting member 150, the head of the limit pin and the lower surface of the connecting member 150 define the range of travel of the transmission member 171 for lifting and lowering motion. It is understood that there is a clearance fit between the limit protection member 180 and the through hole.

[0105] The present invention further provides a semiconductor process chamber 10 . The semiconductor process chamber 10 comprises a chamber body 200 and the carrier device 100 of the above embodiment. The carrier device 100 is disposed in the chamber body 200 .

[0106] The semiconductor process chamber 10 may further include an upper electrode 300 , a focus ring 410 , a base ring 420 , a guard ring 430 , an insulating ring 440 , a grounding ring 450 , a gas connector 510 , a gas connecting tube 520 , a three-needle mechanism 610 , and a three-needle motor 620 .

[0107] Figure 6 FIG. 2 is a bottom view of the chamber 200 of the semiconductor process chamber 10 according to an embodiment of the present invention. Figure 6 The transmission member 171 may be provided with a plurality of mounting points 1711 along the edge, and each mounting point 1711 corresponds to a blocking member 120. In other words, a plurality of blocking members 120 are mounted on the edge of the transmission member 171. The spacing between each two adjacent mounting points 1711 is the same. The linear servo motor is eccentrically connected to the transmission member 171.

[0108] The present invention further provides a control method of the carrying device 100 , which is used to control the carrying device 100 .

[0109] The control method of the carrying device 100 includes the following steps S001 to S007.

[0110] Step S001: Load the carrier 100 into the cavity 200, move the blocking member 120 to the avoidance position, turn on the electrostatic power supply, send a signal, generate an electrostatic voltage and load it on the carrier 100, polarize and generate electrostatic force to adsorb the wafer 20. After the wafer 20 is adsorbed, a back-blowing gas is introduced between the carrying surface 131 of the carrier body 110 and the wafer 20; wherein the back-blowing gas is, for example, He gas.

[0111] Step S002 : obtaining the actual voltage value on the carrying surface 131 .

[0112] Step S003 : obtaining a breakdown voltage value at the first gas through hole 111 on the carrier body 110 .

[0113] Step S004: determine whether the actual voltage value is greater than the breakdown voltage value.

[0114] If the judgment result is yes, then there is a probability that an ignition phenomenon will occur at the first gas through hole 111 on the carrier body 110 at this time, and the process goes to step S005.

[0115] If the judgment result is no, go to step S006.

[0116] Step S005: driving the blocking member 120 to rise to the blocking position to increase the breakdown voltage value at the first gas through hole 111 on the carrier body 110 so that the actual voltage value is less than or equal to the breakdown voltage value, thereby solving the technical problem that ignition may occur at the first gas through hole 111 .

[0117] Step S006: Keep the blocking member 120 at the avoidance position

[0118] The control method of the carrying device 100 includes steps S007 to S010.

[0119] Step S007 : obtaining the actual gas pressure value between the carrying surface 131 and the wafer 20 .

[0120] Step S008: When the blocking member 120 is located at the blocking position, it is determined whether the actual gas pressure is less than a pre-stored preset pressure value.

[0121] If the judgment result is yes, go to step S009.

[0122] If the judgment result is no, go to step S010.

[0123] Step S009: Drive the blocking member 120 down to the avoidance position, and add back-blowing gas between the carrying surface 131 and the wafer 20 to increase the actual gas pressure value between the carrying surface and the wafer. The edge of the surface of the carrier body 110 is designed with a sealing surface, and the sealing surface will have a leakage rate of 0.1-1sccm. Although the leakage rate is small, long-term use will still lead to insufficient pressure on the upper surface of the carrier body 110. Therefore, a pressure sensor is set inside the carrier body 110 to monitor the actual gas pressure value between the upper surface of the carrier body 110 and the wafer 20. When the actual gas pressure value is lower than the preset pressure value, the pressure signal is transmitted to the controller through the pressure sensor, and the controller then commands the linear servo motor to perform lifting and lowering movements. For example, the preset pressure value is 28 Torr. When the helium pressure detected on the upper surface of the carrier body 110 is lower than 28 Torr, the lifting mechanism descends, allowing the helium to flow into the upper surface of the carrier body 110.

[0124] Step S010: Keep the blocking member 120 in the blocking position

[0125] During the entire process, the closed gap 151 is always connected to the gas source, so that after the blocking member 120 is lowered to the avoidance position, the closed gap 151 can timely transmit the back-blowing gas to the first gas through hole 111. If the closed gap 151 is not always connected to the gas source, the time of opening the connection may affect the timely replenishment of the back-blowing gas.

[0126] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0127] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0128] In the description of the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0129] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0130] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0131] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A carrier device for carrying a wafer in a semiconductor process chamber, characterized in that: The carrying device comprises: A carrier body, comprising a carrier surface for carrying the wafer, the carrier body being provided with a first gas through hole, the first gas through hole being used to transmit a back-blowing gas to between the carrier surface and the wafer placed on the carrier surface; A blocking member, the blocking member can be lifted and lowered relative to the carrying body so as to be able to move to a avoiding position or a blocking position; Wherein, when the blocking member moves to the blocking position, the blocking member is located in the first gas through hole, and the top surface of the blocking member facing the wafer is not lower than the plane where the opening of the first gas through hole facing the wafer is located; When the blocking member moves to the avoidance position, the blocking member is separated from the first gas through hole.

2. The carrying device according to claim 1, characterized in that: Also included is a control device, the control device comprising: A voltage detector, used to obtain an actual voltage value on the bearing surface; A controller is connected to the voltage detector, and is used to compare the actual voltage value with the breakdown voltage value at the first gas through hole on the carrier body, and when the actual voltage value is greater than the breakdown voltage value, control the blocking member to rise to the blocking position.

3. The carrying device according to claim 2, characterized in that: The control device also includes: A pressure detector, used for obtaining an actual gas pressure value between the carrying surface and the wafer placed on the carrying surface; Wherein, the controller is also used to connect with the pressure detector, and the controller is used to compare the actual gas pressure value with the pre-stored preset pressure value, and when the actual gas pressure value is less than the preset pressure value, drive the blocking member to move to the avoidance position.

4. The carrying device according to claim 2 or 3, characterized in that: The control device also includes a height detector for detecting the height position of the blocking member; The controller is also connected to the height detector, and is also used to compare the height position of the blocking member with the blocking position or the avoidance position, and adjust the height position of the blocking member according to the comparison result so that the blocking member is located at the blocking position or the avoidance position.

5. The carrying device according to claim 1, characterized in that: The blocking member comprises a first column and a second column, wherein the second column is located above the first column and connected thereto, and the diameter of the first column is greater than the diameter of the second column; Wherein, when the blocking member rises to the blocking position, the second column is located in the first gas through hole, and the top surface of the second column facing the wafer is not lower than the plane where the opening of the first gas through hole facing the wafer is located; When the blocking member descends to the avoidance position, the second column is separated from the first gas through hole.

6. The carrying device according to claim 5, characterized in that: The axial length of the second column is greater than or equal to the axial depth of the first gas through hole.

7. The carrying device according to claim 5, characterized in that: The upper end surface of the first cylinder has an annular area surrounding the second cylinder; When the blocking member rises to the blocking position, the annular area fits against the surface of the supporting body that is away from the supporting surface.

8. The carrying device according to claim 5, characterized in that: The blocking member is made of a rigid material; the second column and the first gas through hole are clearance-matched, and the clearance between the first gas through hole and the second column is greater than or equal to 0.05 mm and less than or equal to 0.1 mm.

9. The carrying device according to claim 5, characterized in that: The blocking member is made of elastic material, and the second column and the first gas through hole are in interference fit.

10. The carrying device according to claim 1, characterized in that: The carrying device also includes: The base is vertically stacked below the carrier body, and the base is provided with a second gas through hole, which is connected to the first gas through hole and is used to transmit the back-blowing gas to between the carrier surface and the wafer together with the first gas through hole.

11. The carrying device according to claim 10, characterized in that: The carrying body is provided with a plurality of the first gas through holes, the base is provided with a plurality of the second gas through holes, and the carrying device includes a plurality of the blocking members; The number of the first gas through holes, the number of the second gas through holes and the number of the blocking members are the same and are arranged in a one-to-one correspondence.

12. The carrying device according to claim 10, characterized in that: Also includes: A connecting member is arranged on a side of the base away from the supporting body, and the connecting member and the base are spaced apart to form a closed gap between the connecting member and the base, and the closed gap is used to transmit the back-blowing gas to the second gas through hole.

13. The carrying device according to claim 12, characterized in that: Also includes: An air intake structure, wherein the air intake structure penetrates the connecting piece to the closed gap, and the air intake structure is used to transmit the back-blowing gas in the air source to the closed gap.

14. The carrying device according to claim 12, characterized in that: The connecting member is provided with a connecting hole for the blocking member to pass through, and a sealing member is provided between the connecting hole and the blocking member.

15. The carrying device according to claim 12, characterized in that: It also includes a driving device for driving the blocking member to move up and down relative to the carrying body; The driving device comprises: A transmission member, disposed on the other side of the connecting member away from the base, the transmission member being connected to the blocking member; A driving member is connected to the transmission member and is used to drive the transmission member to perform lifting motion.

16. A semiconductor process chamber, characterized in that: include: Cavity; The carrying device described in any one of claims 1 to 15 is arranged in the cavity.

17. A method for controlling a load-bearing device, characterized in that: Used to control the carrying device according to any one of claims 1 to 15, the control method comprising: Moving the blocking member to the avoidance position, and introducing the back-blowing gas between the carrying surface of the carrying body and the wafer; Acquire the actual voltage value on the bearing surface; Obtaining a breakdown voltage value at the first gas through hole on the carrier body; Determining whether the actual voltage value is greater than the breakdown voltage value; If the judgment result is yes, the blocking member is driven to rise to the blocking position to increase the breakdown voltage value at the first gas through hole on the carrier body; If the judgment result is no, the blocking member is kept at the avoidance position.

18. The control method according to claim 17, characterized in that: The control method further comprises: Acquiring an actual gas pressure value between the carrying surface and the wafer; When the blocking member is located at the blocking position, determining whether the actual gas pressure is less than a pre-stored preset pressure value; If the judgment result is yes, the blocking member is driven to descend to the avoidance position, and the back-blowing gas is supplemented between the carrying surface and the wafer to increase the actual gas pressure value between the carrying surface and the wafer; If the judgment result is no, the blocking member is kept at the blocking position.

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