Film thickness measuring apparatus, film forming apparatus, film thickness measuring method, and electronic device manufacturing method

Abstract

The film thickness measuring device is arranged in a film forming chamber for forming a film on a substrate or a transfer chamber for transferring the substrate to the film forming chamber, and comprises a light receiving part for receiving reflected light emitted by an emitting part for emitting light to the substrate and reflected by the substrate; and a determination means for determining the film thickness of the film formed in the film formation region of the substrate on the basis of the light reception result of the light reception unit. The determination means determines the film thickness of the film formed in the film formation region on the basis of a light reception result regarding the reflected light reflected by the film formation region on which the film has been formed and the reflected light reflected by the first reference region and the second reference region aligned with the film formation region of the substrate in the first direction.

Description

Technical Field

[0001] The present invention relates to a film thickness measuring device, a film forming device, a film thickness measuring method and a method for manufacturing an electronic device. Background Art

[0002] As manufacturing equipment for organic EL displays, there is known an apparatus that conveys a substrate to a film forming chamber and forms a film on the substrate. Patent document 1 proposes a film forming apparatus having a film thickness measuring unit that optically measures the film thickness of a film formed on a substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-161490 Summary of the invention

[0006] Problems to be solved by the invention

[0007] Generally speaking, when optically measuring the film thickness of a film formed on a substrate, a reference measurement is performed to obtain data serving as a reference. In the reference measurement, for example, reflected light emitted to a region of the substrate where no film is formed is received. In order to improve the accuracy of the film thickness measurement, it is preferred to perform the reference measurement with higher accuracy.

[0008] The present invention provides a technique for achieving improved accuracy of reference measurements.

[0009] Means for solving problems

[0010] According to the present invention, a film thickness measuring device and a film forming device equipped with the film thickness measuring device are provided, wherein the film thickness measuring device is arranged in a film forming chamber for forming a film on a substrate or in a delivery chamber for delivering the substrate to the film forming chamber, and the film thickness measuring device comprises: a light receiving portion for receiving reflected light emitted by an emitting portion for emitting light to the substrate and reflected by the substrate; and a determining component for determining the film thickness of a film formed in a film forming area of ​​the substrate based on a light receiving result of the light receiving portion.

[0011] The determination component determines the thickness of the film formed in the film forming area based on the light reception result regarding the reflected light reflected from the film forming area where film formation is performed and the reflected light reflected from the first reference area and the second reference area arranged in the first direction with the film forming area of ​​the substrate.

[0012] Effects of the Invention

[0013] According to the present invention, it is possible to improve the accuracy of reference measurement. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a layout diagram of the film forming device.

[0015] Figure 2 This is a diagram for explaining the structure and operation of the vapor deposition source and the moving unit.

[0016] Figure 3 It is a plan view for explaining the conveying unit.

[0017] Figure 4 It is a cross-sectional view for explaining the conveying unit.

[0018] Figure 5 It is a diagram showing a configuration example of a film thickness measuring device.

[0019] Figure 6 This is an explanatory diagram of a tapered member.

[0020] Figure 7 It is a diagram showing the measurement position of the film thickness measuring device.

[0021] Figure 8 It is a cross-sectional view of the film forming apparatus at the YZ plane.

[0022] Fig. 9 This is a diagram showing an example of the measurement results of the reflectance for each film thickness.

[0023] Fig.10 It is a diagram showing an example of arrangement of a film forming region and a reference region provided on a substrate for measuring film thickness.

[0024] Fig.11 This is an enlarged view of the periphery of the film formation area and the reference area for measuring film thickness.

[0025] Fig.12 This is a flowchart showing an example of a method for measuring film thickness.

[0026] Fig.13A This is a diagram for explaining the operation of the film thickness measuring device.

[0027] Fig. 13B This is a diagram for explaining the operation of the film thickness measuring device.

[0028] Fig. 13C This is a diagram for explaining the operation of the film thickness measuring device.

[0029] Fig.14A This is a diagram showing another example of the arrangement of the periphery of the film formation region and the reference region for film thickness measurement.

[0030] Fig. 14B This is a diagram showing another example of the arrangement of the periphery of the film formation region and the reference region for film thickness measurement.

[0031] Fig.15 This is a diagram showing the relationship between the position in the X direction and the intensity of received light.

[0032] Fig.16 It is a schematic diagram showing the structure of a film forming apparatus according to one embodiment.

[0033] Fig.17 This is a schematic diagram showing an outline of a delivery room.

[0034] Fig.18 It is a plan view for explaining the substrate support portion.

[0035] Fig.19A It is a diagram for explaining the influence of the posture of the substrate W on the film thickness value.

[0036] Fig.19B It is a diagram for explaining the influence of the posture of the substrate W on the film thickness value.

[0037] Fig. 20A This is an overall diagram of an organic EL display device.

[0038] Fig. 20B This is a diagram showing the cross-sectional structure of one pixel. DETAILED DESCRIPTION

[0039] Hereinafter, the embodiments are described in detail with reference to the accompanying drawings. In addition, the following embodiments do not limit the invention involved in the claims. In addition, all combinations of features described in the embodiments are not necessarily combinations of the invention. Two or more of the multiple features described in the embodiments may also be combined arbitrarily. In addition, the same or similar structures are marked with the same figure numerals and repeated descriptions are omitted.

[0040] <1. Overview of film forming apparatus>

[0041] Figure 1 : is a layout diagram of the film forming apparatus 1. In each figure, arrow Z indicates the up-down direction (gravity direction), arrow X and arrow Y indicate mutually orthogonal horizontal directions, and arrow θ indicates the rotation direction around the Z axis.

[0042] The film forming device 1 is a device for forming a film on a substrate W. The film forming device 1 can form a thin film of a vapor-deposited material of a predetermined pattern on the substrate W using a mask M. The material of the substrate W can be appropriately selected from materials such as glass, resin, and metal, and a material in which a resin layer such as polyimide is formed on glass is typically used. In the case of the present embodiment, the substrate W is rectangular. The vapor-deposited material is an organic material, an inorganic material (metal, metal oxide, etc.), and the like. The film forming device 1 can be applied to, for example, a manufacturing device for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, organic photoelectric conversion elements (organic thin-film imaging elements), optical components, and the like, and can particularly be applied to a manufacturing device for manufacturing organic EL panels.

[0043] The film forming device 1 includes a conveying chamber 2, a terminal chamber 3, and a film forming chamber 4. Each chamber can be kept airtight by the wall portions constituting each chamber. That is, each chamber is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In the present embodiment, each chamber is connected to a vacuum pump not shown. In addition, in this specification, "vacuum" refers to a state filled with a gas having a pressure lower than the atmospheric pressure, in other words, a reduced pressure state.

[0044] Here, a structure is illustrated in which the conveying chamber 2 and the terminal chamber 3 are arranged in the X direction and the two film forming chambers 4 are arranged on both sides of the terminal chamber 3 in the Y direction. The film forming device 1 is configured so that one conveying chamber 2, one terminal chamber 3 and two film forming chambers 4 are regarded as a cluster, and a plurality of clusters can be connected in the X direction. In addition, the number of connected clusters can be appropriately set. In addition, the film forming chamber 4 can also be arranged only on one side of the terminal chamber 3 in the Y direction.

[0045] The film forming apparatus 1 includes a conveying unit 5A and a conveying unit 5B. The conveying unit 5A and the conveying unit 5B are provided from the terminal chamber 3 to the film forming chamber 4, and convey the substrate W and the mask M between the terminal chamber 3 and the film forming chamber 4.

[0046] The control system of the film forming device 1 includes a host device 300 that controls the entire production line and control devices 301 to 305 that control each component as a main computer, which can communicate via a wired or wireless communication line 300a. The control device 301 controls the conveying robot 2a described later set in the conveying chamber 2. The base unit 302 controls the conveying robot 3a described later set in the terminal room 3. Multiple control devices 303 respectively control the evaporation source 8 and the moving unit 9 described later of the corresponding film forming chamber 4. The control devices 304 and 305 respectively control the conveying unit 5A and the conveying unit 5B described later. The host device 300 sends information related to the substrate W, conveying timing and other instructions to each control device 301 to 305, and each control device 301 to 305 controls each component based on the received instructions. In addition, the host device 300 and each control device 301 to 305 have, for example, a processor such as a CPU, a storage device such as a semiconductor memory and a hard disk, and an input / output interface.

[0047] Furthermore, the film forming apparatus 1 includes a mask chamber 104 which is provided adjacent to the transfer chamber 2 and houses the mask M.

[0048] <2. Transport Room>

[0049] In the transport chamber 2, the substrate W or the mask M is transported to the terminal chamber 3. A transport robot 2a is provided in the transport chamber 2. The transport robot 2a is a two-arm type robot that supports two sets of arms 21 and a hand 22 on a base 20. The two sets of arms 21 and the hand 22 rotate in the θ direction on the base 20 and are retractable. In addition to transporting the substrate W, the transport robot 2a also transports the mask M. The hand 22 has a fork shape, and the substrate M and the mask M are placed on the hand 22 and transported.

[0050] <3. Terminal Room>

[0051] In the terminal chamber 3, in addition to the transfer of the substrate W or the mask M between the conveying chamber 2 and the film forming chamber 4, the substrate W or the mask M is also distributed relative to the film forming chamber 4. A conveying robot 3a is provided in the terminal chamber 3. The conveying robot 3a is a robot having an arm 31 and a hand 32 supported by a base portion 30. The arm 31 and the hand 32 rotate along the θ direction on the base portion 30 and are retractable. The conveying robot 3a receives the substrate W or the mask M from the conveying robot 2a in the conveying chamber 2 and transfers it to the conveying unit 5 described later. In addition, the substrate W or the mask M received from the conveying unit 5 is moved out to the downstream conveying chamber 2. A camera (not shown) for determining the position of the substrate W or the mask M when the conveying robot 3a transfers the substrate W or the mask M to the conveying unit 5 is provided in the terminal chamber 3.

[0052] <4. Film Forming Room>

[0053] In the film forming chamber 4, a film is formed on the substrate W using a mask M. Figure 1 As shown, two mask stages 41 are respectively arranged in the two film forming chambers 4. The vapor deposition positions JA to JD for vapor deposition are defined by a total of four mask stages 41. The two film forming chambers 4 have the same structure. Each film forming chamber 4 is provided with a vapor deposition source 8 and a moving unit 9 for moving the vapor deposition source 8. Figure 2 The structures and operations of the vapor deposition source 8 and the moving unit 9 will be described.

[0054] The evaporation source 8 is a film forming unit that includes a crucible for accommodating a raw material of the evaporation substance, a heater for heating the crucible, etc., and heats the raw material to release the evaporation substance as its vapor from the opening 8a upward. The moving unit 9 includes an actuator 90, a pair of movable rails 94, and a pair of fixed rails 95. The actuator 90 includes a driving source not shown in the figure, an arm member 91, and an arm member 92. One end of the arm member 91 is connected to the driving source not shown in the figure, and rotates by the driving source not shown in the figure. The other end of the arm member 91 is rotatably connected to one end of the arm member 92, and the other end of the arm member 92 is rotatably connected to the bottom of the evaporation source 8.

[0055] The pair of movable rails 94 guide the movement of the evaporation source 8 in the Y direction. Each movable rail 94 is extended in the Y direction, and the pair of movable rails 94 are separated from each other in the X direction. The pair of fixed rails 95 guide the movement of the pair of movable rails 94 in the X direction. Each fixed rail 95 is fixed so as not to move and extends in the Y direction. The pair of fixed rails 95 are separated from each other in the Y direction.

[0056] By driving the actuator 90, the evaporation source 8 slides in the Y direction below the evaporation position JA (below the mask stage 41), and slides from the evaporation position JA side to the evaporation position JB side, and then slides in the Y direction below the evaporation position JB (below the mask stage 41). Specifically, when the arm members 91 and 92 are rotated by the drive of the actuator 90 from the position of the state ST2A, as shown in the state ST2B, the evaporation source 8 passes below the evaporation position JA in the Y direction under the guidance of the pair of movable rails 94. When the arm members 91 and 92 are rotated in the opposite direction by the drive of the actuator 90 from this state, as shown in the state ST2C, the evaporation source 8 passes below the evaporation position JA in the Y direction and returns to the position of the state ST2A.

[0057] When the arm members 91 and 92 are further rotated by the drive of the actuator 90, the evaporation source 8 and the pair of movable rails 94 move toward the evaporation position JB side along the X direction under the guidance of the pair of fixed rails 95. When the arm members 91 and 92 are further rotated by the drive of the actuator 90 from the position of state ST2D, as shown in state ST2E, the evaporation source 8 passes below the evaporation position JB along the Y direction under the guidance of the pair of movable rails 94. When the arm members 91 and 92 are reversely rotated by the drive of the actuator 90 from this state, as shown in state ST2F, the evaporation source 8 passes below the evaporation position JB along the Y direction and returns to the position of state ST2D.

[0058] As described above, in the present embodiment, by moving one vapor deposition source 8 , it is possible to share the vapor deposition source 8 at two vapor deposition positions, the vapor deposition position JA and the vapor deposition position JB.

[0059] <5. Conveying unit>

[0060] like Figure 1 As shown, the film forming apparatus 1 includes two sets of conveying units 5A and conveying units 5B arranged from the terminal chamber 3 to the two film forming chambers 4. The conveying unit 5A includes a holding unit 6A and a holding unit 6C, and a moving unit 7A that allows the holding unit 6A and the holding unit 6C to independently move in parallel in the direction along the film forming surface of the substrate W (in the Y direction in this embodiment). The conveying unit 5B has the same structure as the conveying unit 5A, and includes a holding unit 6B and a holding unit 6D, and a moving unit 7B that allows the holding unit 6B and the holding unit 6D to independently move in parallel in the direction along the film forming surface of the substrate W (in the Y direction in this embodiment). In addition, the number, arrangement, etc. of the conveying unit and the holding units and moving units constituting the conveying unit can be appropriately changed according to the structure of the terminal chamber 3 and the film forming chamber 4, etc.

[0061] Figure 3 5A and 5B are shown as parts disposed in the terminal room 3. Figure 4 The figure shows a cross-sectional view of the conveying unit 5A (moving unit 7A and holding unit 6A). The conveying unit 5A and the conveying unit 5B are units that independently reciprocate the holding units 6A to 6D in a horizontal posture in the Y direction at a position higher than the conveying robot 3a, and are arranged side by side in the X direction. Figure 4 Although the structure of the transport unit 5A (the moving unit 7A and the holding unit 6A) is shown as a representative, the holding units 6A to 6D have the same structure, and the moving unit 7A and the moving unit 7B also have the same structure.

[0062] The moving unit 7A and the moving unit 7B of this embodiment are mechanisms for moving the holding units 6A to 6D by magnetic force, and in particular, mechanisms for floating and moving the holding units 6A to 6D by magnetic force. The moving units 7A and 7B are respectively provided with a pair of guide members 70 for defining the moving track of the holding units 6A to 6D in the Y direction. Each guide member 70 is a track member having a C-shaped cross section and extending in the Y direction. The pair of guide members 70 are separated from each other in the X direction.

[0063] Each guide member 70 includes a plurality of pairs of magnetic elements 71 separated in the Z direction. The plurality of pairs of magnetic elements 71 are arranged at equal intervals in the Y direction. At least one of the pair of magnetic elements 71 is an electromagnet, and the other is an electromagnet or a permanent magnet.

[0064] The holding units 6A to 6D are carriers for conveying substrates W and masks M. The holding units 6A to 6D each have a main body member 65 that is rectangular when viewed from above. Each end of the main body member 65 in the X direction is inserted into the corresponding guide member 70. Permanent magnets 61 provided with yokes not shown are fixed to the upper surface and the lower surface of each end of the main body member 65 in the X direction. A plurality of upper and lower permanent magnets 61 are provided on the main body member 65 along the Y direction. The permanent magnet 61 faces the magnetic element 71 of the guide member 70. The repulsive force between the permanent magnet 61 and the magnetic element 71 can generate a levitation force in the holding units 6A to 6D. By sequentially switching the magnetic element 71 that generates magnetic force among the plurality of magnetic elements (electromagnets) 71 provided along the Y direction, the attractive force between the permanent magnet 61 and the magnetic element 71 can be used to generate a moving force in the Y direction in the holding units 6A to 6D.

[0065] In the present embodiment, the moving units 7A and 7B are configured as magnetic levitation conveyance mechanisms, but other conveyance mechanisms capable of moving the holding units 6A to 6D, such as roller conveyance mechanisms, belt conveyance mechanisms, and rack-and-pinion mechanisms, may also be used.

[0066] A scale 72 extending in the Y direction is disposed on the guide member 70, and a sensor 64 for reading the scale 72 is disposed on the main body member 65. Based on the detection result of the sensor 64, the position of each holding unit 6A to 6D in the Y direction can be determined.

[0067] The holding units 6A to 6D each include a holding portion 62 for holding the substrate W. In the present embodiment, the holding portion 62 is an electrostatic chuck for adsorbing the substrate W by electrostatic force, and includes a plurality of electrodes 62a disposed on the lower surface of the holding units 6A to 6D. The holding portion 62 may also include an adhesive pad, a vacuum pad, or the like for holding the substrate W by adhesive force.

[0068] The holding units 6A to 6D further include a holding portion 63 for holding the mask M. The holding portion 63 is, for example, a magnetic chuck for magnetically attracting the mask M and is located outside the holding portion 62 in the X direction. The holding portion 63 may be a clamping mechanism for mechanically clamping the mask M.

[0069] The holding units 6A to 6D receive the substrate W and mask M transported from the transport robot 3a at a predetermined position in the terminal chamber 3. Figure 3 , it shows the state where the holding units 6A to 6D are located at the receiving positions PA to PD. The receiving positions PA to PD are arranged in a matrix (2×2) in the XY plane and are set outside the film forming chamber 4, that is, inside the terminal chamber 3. Since there are four different receiving positions PA to PD, these receiving positions PA to PD can be used as a buffer for the substrate W to stay even if a system failure occurs on the downstream side.

[0070] <6. Film thickness measuring device>

[0071] Next, the film thickness measuring device 120 for measuring the film thickness of the substrate on which the film has been formed will be described. In the present embodiment, the film thickness measuring device 120 uses an optical sensor to measure the film thickness based on the reflectivity of light on the surface of the substrate.

[0072] <6.1. Configuration example of film thickness measuring device>

[0073] Figure 5 1 shows a configuration example of the film thickness measuring device 120. The film thickness measuring device 120 of configuration example 1 includes a light source 2901, a vacuum flange 2902, a light projecting and receiving unit 2903, a spectrometer 2904, a PC 2905, and a moving unit 2906. The light source 2901, the vacuum flange 2902, the light projecting and receiving unit 2903, and the spectrometer 2904 are connected by optical fibers.

[0074] The light source 2901 is a light emitting device that can switch between output and non-output of light by operating a shutter 29011. In one example, the light source 2901 includes a deuterium (D2) halogen light source 29012 that emits continuous light of halogen and deuterium from one emission port. In another example, the light source 2901 includes a laser light source.

[0075] The vacuum flange 2902 is arranged at the connection part between the vacuum environment and the atmospheric environment. For example, the light source 2901, the spectrometer 2904, and the PC 2905 are arranged in a frame that is maintained in the atmospheric environment, and the light projecting and receiving unit 2903 is arranged in a film forming chamber that can be maintained in a vacuum state outside the frame, and the optical fiber connecting the light projecting and receiving unit 2903 with the light source 2901 and the spectrometer 2904 connects the inside and outside of the frame via the vacuum flange 2902. In another example, the light projecting and receiving unit 2903 can also be arranged on the inside of the film forming chamber 4 or the terminal chamber 3, and the light source 2901, the spectrometer 2904, and the PC 2905 can be arranged on the outside of the film forming chamber 4 and the terminal chamber 3. In this case, the vacuum flange 2902 can also be set on the wall surface of the film forming chamber 4 and the terminal chamber 3.

[0076] The light projecting and receiving unit 2903 includes: an emitting unit for emitting light from the light source 2901 vertically upward; and a light receiving unit for receiving reflected light and sending it to the spectrometer 2904. The spectrometer 2904 includes a light input port, and performs spectroscopic analysis on the input light and measures the light intensity for each wavelength band. Then, information related to the measured light intensity is sent to the PC 2905.

[0077] PC2905 calculates the measured value of the film thickness using the mathematical formulas (1) and (2) described later based on the intensity of the light measured by the spectrometer 2904. In addition, in one example, PC2905 can use the measured value of the film thickness to adjust the time taken for the film forming process of the film forming device 1, adjust the amount of the evaporation material discharged from the evaporation source 8 of the film forming device 1, adjust the parameters of the subsequent film forming process, etc.

[0078] The moving unit 2906 moves the light projecting and receiving unit 2903. In the present embodiment, the moving unit 2906 moves the light projecting and receiving unit 2903 in the X direction (the short side direction of the substrate W).

[0079] <6.2. Conical components>

[0080] As described later Figure 8 As shown in FIG. 1 , at the locations MAA to MDC where the film thickness measuring device 120 is arranged, the measuring light emitted from the film thickness measuring device 120 is reflected by the ceiling of the terminal chamber 3 and the film forming chamber 4 and input to the light projecting and receiving unit. As a result, the measuring accuracy may be reduced. Figure 6In one example, the conical member 3101 is configured for the top plate portion of the terminal chamber 3. For example, the conical member 3101 has a triangular prism, a pyramid, or a cone. Thus, the measurement light can be reflected in a direction different from that of the film thickness measuring device 120. In addition, in one example, the conical member 3101 is a black member with a high light absorption rate. In another example, the surface portion irradiated with the measurement light from the film thickness measuring device 120 is subjected to surface processing such as sandblasting, which can promote the diffusion of light.

[0081] By configuring the tapered member 3101 in this way, it is possible to prevent the measurement light emitted from the film thickness measurement device 120 from being reflected at a portion different from the substrate W, thereby preventing the measurement accuracy of the film thickness from being reduced.

[0082] <6.3. Configuration of film thickness measuring device>

[0083] Figure 7 Indicates measurement positions MAA to MDC where the film thickness measuring device 120 can be arranged in the film forming apparatus. The measurement positions MAA, MBA, MCA, and MDA are positions between the receiving positions PA to PD and the vapor deposition positions JA to JD and within the terminal chamber 3, i.e., outside the film forming chamber 4, at which the film thickness of the substrate W transported by the transport units 5A and 5B is measured. The measurement positions MAB, MBB, MCB, and MDB are positions between the receiving positions PA to PD and the vapor deposition positions JA to JD and within the film forming chamber 4 at which the film thickness of the substrate transported by the transport units 5A and 5B is measured. The measurement positions MAC, MBC, MCC, and MDC are positions at which the film thickness of the substrate located at the vapor deposition positions JA to JD in the film forming chamber 4 is measured. In addition, the film thickness measuring device 120 may be arranged at least at one of the measurement positions MAA to MDC between the receiving positions PA to PD and the vapor deposition positions JA to JD, and it is not necessary to arrange the film thickness measuring device 120 at all the measurement positions.

[0084] Figure 8 is a cross-sectional view of the film forming device at the YZ plane. Figure 8 As shown, the measurement positions MAA to MDC where the film thickness measuring device 120 can be arranged are all arranged below the substrate W in the vertical direction (Z direction). Thus, the film thickness measuring device 120 can measure the film thickness of the substrate W while being transported by the transport units 5A and 5B.

[0085] Thus, the film thickness of the substrate W is measured while the substrate W is held by the holding unit 6, so that the film thickness measurement can be performed without the need for additional large-scale equipment such as a film thickness measurement chamber. In addition, since the film thickness measurement is performed while the substrate W is being transported, the film thickness can be measured quickly after film formation.

[0086] <6.4. Measurement Principle>

[0087] The following describes the principle of measuring the film thickness by the film thickness measuring device 120. The film thickness measuring device 120 of this embodiment performs background measurement, reference measurement, and sample measurement, and determines the film thickness of a film formed on the substrate W based on these measurement results.

[0088] <6.4.1. Background measurement>

[0089] The film thickness measuring device 120 emits laser light and measures the intensity of reflected light before the substrate W is moved into the measuring position, for example. The received light intensity of the laser light here is referred to as PBG. By measuring the received light intensity PBG, the magnitude of noise (background noise) caused by the temperature characteristics of the light receiving sensor and the light leakage of the optical fiber in the measuring device can be determined.

[0090] <6.4.2. Reference measurement>

[0091] The film thickness measuring device 120 emits laser light to a reference area (described later) of the substrate W, and measures the intensity of the reflected light as a reference. Here, the laser light is emitted to an area of ​​the substrate W where the reflectivity Rref is known, such as an area where a film is not formed (e.g., plain glass). Here, if the irradiation intensity of the transmitted laser light is PTref and the light intensity of the received laser light is PRref, the following mathematical formula (1) holds.

[0092] Rref=(PRref-PBG) / (PTref-PBG) (1)

[0093] As described above, the reflectivity Rref (known), the light intensity PBG in the background measurement, and the light intensity PRref in the reference measurement can be obtained. Therefore, the irradiation intensity PTref of the laser can be determined based on the above formula. Thus, the correspondence between the reflectivity and the light intensity can be determined.

[0094] <6.4.3. Sample measurement>

[0095] The film thickness measuring device 120 emits laser light to the film forming area (sample area) of the substrate W, and measures the intensity of the reflected light from the film forming area (sample area). Here, the reflectivity R of the film-formed substrate W can be determined based on the received light intensity PR of the received laser light, with reference to the irradiation intensity PTref of the laser light determined in the reference measurement, by the following mathematical formula (2).

[0096] R=(PR-PBG) / (PTref-PBG) (2)

[0097] Fig. 9 An example of the measurement results of the reflectivity of each film thickness after film formation is shown. Fig. 9As shown, compared with the reflectivity of the substrate in the case of a film thickness of 40 angstroms (Å), in the case of a film thickness of 1600Å, the reflectivity around wavelengths of 280, 330~420nm becomes larger. Therefore, by measuring the reflectivity of this band, the film thickness can be estimated. The estimation of the film thickness based on the reflectivity can use known techniques. For example, the reflectivity can also be measured in advance at multiple film thicknesses, and which measurement result is close to it can be estimated based on the measured reflectivity. In addition, information representing the relationship between the film thickness and the reflectivity can also be stored by PC2905 or the host device 300.

[0098] In addition, in estimating the film thickness based on the reflectivity measurement result, the film thickness may be estimated based on the reflectivity measured in a plurality of frequency bands. For example, when the film thickness estimation results based on the reflectivity measurement results at wavelengths of 280 nm and 330 nm are 1000 Å and 1200 Å, respectively, the film thickness may be set to 1100 Å by taking the average of the estimated film thickness results.

[0099] <6.5. Improvement of reference measurement accuracy>

[0100] In addition, as an example of a specific method for reference measurement, a method of flowing a reference substrate separately from a substrate W on which film is to be formed can be cited. In the case of this method, a substrate on which film is not to be formed flows in the film forming device 1, which may lead to a decrease in production efficiency. In addition, in the case of this method, the difference in posture (bending method) of the substrate W on which film is to be formed and the reference substrate when they are held in the holding unit 6 may affect the measurement result. In addition, as another method, a method of using a predetermined area of ​​the substrate W on which film is to be formed as a reference area can also be considered. However, in this case, the difference in posture (bending method) between the film forming area on which the sample measurement is to be performed and the reference area may also affect the measurement result. The larger the substrate, the greater the influence of these postures (bending methods) on the measurement results. For example, in a rectangular substrate of the full size (about 1500mm×about 1850mm) or half-cut size (about 1500mm×about 925mm) of the sixth generation (G6), there may be concern about the influence of the posture (bending method) of the substrate on the measurement result. Therefore, in this embodiment, the accuracy improvement of the reference measurement is achieved by the following method.

[0101] <6.5.1. Configuration example of reference area>

[0102] Fig.10 2 is a diagram showing an example of the arrangement of a film forming region (sample region) and a reference region for measuring film thickness provided on a substrate W. Fig.11 This is an enlarged view of the film formation area (sample area) and the surrounding area of ​​the reference area for film thickness measurement.

[0103] In the present embodiment, on the substrate W, the region R1 for measuring the film thickness is provided separately from the region R2 for forming a film in order to form a display element of an electronic device.

[0104] The film thickness measurement region R1 is provided with a film thickness measurement region R11 and reference regions R12a to R12d. The film thickness measurement region R11 is a region irradiated with laser light during the aforementioned sample measurement. The reference regions R12a to R12d are regions irradiated with laser light during the aforementioned reference measurement.

[0105] A thin film for measuring film thickness (sometimes referred to as a measuring membrane sheet) is formed in the film forming region R11. The measuring membrane sheet can be formed by forming an opening for the measuring membrane sheet in the mask M in advance.

[0106] In the present embodiment, the reference regions R12 a to R12 d are regions where a thin film is not formed. The reference regions R12 a to R12 d can also be said to be regions where the substrate W itself is exposed after film formation in the film formation chamber 4 .

[0107] In addition, in the present embodiment, the two reference regions R12a and R12b are arranged in the short side direction of the substrate W with the film forming region R11. Further, the two reference regions R12a and R12b are arranged in such a manner that the film forming region R11 is located between the reference regions R12a and R12b in the short side direction of the substrate W. In addition, the two reference regions R12c and R12d are arranged in the long side direction of the substrate W with respect to the film forming region R11. Further, the two reference regions R12c and R12d are arranged in such a manner that the film forming region R11 is located between the reference regions R12c and R12d in the short side direction of the substrate W. That is, in the present embodiment, the four reference regions R12a to R12d are arranged so as to surround the film forming region R11.

[0108] The four reference regions R12a to R12d may be provided at equal distances from the film formation region R11. More specifically, the four reference regions R12a to R12d may be provided at equal distances from the center of gravity of the film formation region R11.

[0109] In the region R2, film formation is performed via the mask M, thereby forming a plurality of display elements of electronic devices.

[0110] <6.5.2. Film thickness measurement method>

[0111] Fig.12 2 is a flowchart showing an example of a method for measuring film thickness. Here, as an example, a case where the film thickness measuring device 120 measures the film thickness of a film formed on the substrate W at the measurement position MAA will be described. Figures 13A to 13C1 is an operation explanation diagram of the film thickness measuring device 120. For example, after a film is formed on the substrate W at the vapor deposition position JA, the main measurement is performed at the timing when the substrate W returns from the film forming chamber 4 to the terminal chamber 3.

[0112] In S1, a background determination was performed ( Fig.13A ). The background measurement is performed before the substrate W after film formation reaches the measurement position MAA. For example, under the control of PC2905, the projecting and receiving unit 2903 emits a laser based on the emitting unit and receives light based on the light receiving unit. Then, PC2905 measures the light intensity PBG of each wavelength band of the light sent from the light receiving unit of the projecting and receiving unit 2903 and split by the spectrometer 2904. In addition, the background measurement may not be performed for each substrate W. The background measurement may be performed each time a specified number of substrates W are film-formed. In addition, the background measurement may also be performed at specified intervals.

[0113] In S2, a reference assay is performed ( Fig. 13B ). The reference measurement is performed after the film forming area R11 of the substrate W after film formation reaches the measurement position MAA. Under the control of PC2905, the projecting and receiving unit 2903 uses the emitting unit to emit laser light to the reference area R12a~R12d, and uses the light receiving unit to receive the reflected light of the laser. In addition, in the present embodiment, the emission position of the laser of the emitting unit and the position adjustment of each reference area R12a~R12d are performed by the moving unit 2906. However, a part of the position adjustment process can also be performed by the conveying unit 5A. For example, in a case where the moving unit 2906 can only move the projecting and receiving unit 2903 in the X direction, the moving unit 2906 can also perform the position adjustment in the X direction, and the conveying unit 5A can perform the position adjustment in the Y direction. PC2905 measures the light receiving intensity PRrefa~PRrefd of each reference area R12a~R12d.

[0114] In S3, sample measurement is performed ( Fig. 13C ). Under the control of PC2905, the light projecting and receiving unit 2903 uses the emitting unit to emit laser light toward the film forming region R11 (sample region), and uses the light receiving unit to receive the reflected light of the laser light. PC2905 obtains the received light intensity PR of the reflected light detected by the light receiving unit.

[0115] In S4, the film thickness is determined. PC2905 determines the thickness of the film formed in the film forming area R11 based on the light receiving result of the light receiving unit of the light projecting and receiving unit 2903 regarding the reflected light reflected by the film forming area R11 and the reflected light reflected by the reference areas R12a to R12d. As described above, PC2905 can calculate the reflectivity R of the film forming area R11 after film formation using the measurement results of the background measurement, the reference measurement, and the background measurement. Furthermore, PC2905 can determine the film thickness of the film formed in the film forming area R11 based on the reflectivity R calculated by this measurement and the stored information indicating the relationship between the film thickness and the reflectivity.

[0116] In detail, in the present embodiment, PC2905 uses the average value of the light receiving intensities PRrefa to PRrefd, that is, the light receiving intensity PRrefave, to determine the film thickness. As described above, if the influence of the posture (bending mode) of the substrate W is taken into account, the light receiving intensity in the light receiving portion may be different in the film forming area R11 and the reference area R12a to R12d at a predetermined distance from the film forming area R11 due to the difference in posture (bending mode). In the present embodiment, by using the average value of the light receiving intensities PRrefa to PRrefd, the influence of the difference in posture of the substrate W can be reduced, and the accuracy of the reference measurement can be improved. Furthermore, by taking the average value of the light receiving intensities PRrefa to PRrefd of the multiple reference areas R12a to R12d around the film forming area R11, it is possible to approach the measurement result when the reference measurement is performed on an area with the same posture (bending mode) as the film forming area R11. In other words, the average received light intensity PRrefave can be said to be an estimated value of the received light intensity when the film formation region R11 before film formation is irradiated with laser light and reference measurement is performed.

[0117] In addition, here, an example is described in which a sample measurement is performed in S3 after a reference measurement is performed in S2. However, the reference measurement and the sample measurement can also be performed in parallel. For example, the emission of laser light by the light-emitting and receiving unit 2903 and the reception of reflected light can be performed in the order of the reference area R12a, the film-forming area R11, and the reference area R12b. As a result, the movement amount of the light-emitting and receiving unit 2903 performed by the moving unit 2906 in the overall measurement can be reduced, thereby improving the measurement efficiency of the film thickness measurement.

[0118] <6.5.3. Another example of configuration of reference area>

[0119] Fig.14A and Fig. 14B This is a diagram showing another example of the arrangement of the periphery of the film formation region (sample region) and the reference region for film thickness measurement.

[0120] In this example, the two reference regions R12Ba and R12Bb are arranged so that the film forming region R11B is located between the reference regions R12Ba and R12Bb in the short side direction of the substrate W. For example, the PC2905 determines the film thickness using the average value of the light intensity in the reference regions R12Ba and R12Bb. With such an arrangement, for example, the accuracy of the reference measurement can be improved compared to the case where only one reference region is provided.

[0121] exist Fig. 14B In the example of FIG. 1 , the film forming region R11C and the two reference regions R12Ca and R12Cb are arranged in the order of the film forming region R11C, the reference region R12Ca, and the reference region R12Cb in the short side direction of the substrate W. For example, PC2905 determines the film thickness based on the light intensity PRrefCa and PRrefCd of the reference regions R12Ca and R12Cb and the positions XR12Ca and XR12Cb in the short side direction (X direction) of the substrate W. In detail, Fig.15 As shown, the relational expression 1501 of the light intensity Rref relative to the position X at the position Y=YC in the Y direction is calculated based on the light intensity PRrefCa and PRrefCd and the positions XR12Ca and XR12Cb. Then, the light intensity Rref as a result of the reference measurement is calculated based on the relational expression 1501 and the position XR11C in the X direction of the film forming area R11C. Here, when the substrate W is bent, the distance between the projecting and receiving part 2903 and the substrate W changes according to the position in the X direction. Therefore, Fig.15 As shown, the received light intensity may change depending on the position in the X direction.

[0122] like Fig.14A and Fig. 14B As shown in FIG. 2 , when the film forming region and the plurality of reference regions are arranged in parallel in only one direction, the moving unit 2906 can perform reference measurement and sample measurement while moving in only one direction. Therefore, the film thickness measurement can be performed efficiently.

[0123] In addition, here, the relational expression 1501 is calculated based on the measurement results in the two reference areas R12Ca and R12Cb. However, three or more reference areas may be arranged in a predetermined direction with the film forming area R11. Furthermore, an approximate straight line or an approximate curve may be calculated based on these measurement results. As a calculation method, a known method such as a method using the least squares method may be appropriately adopted.

[0124] In addition, an example is shown here in which the film forming region R11C and the two reference regions R12Ca and R12Cb are arranged in the short side direction of the substrate W. However, the film forming region R11C and the two reference regions R12Ca and R12Cb may be arranged in the long side direction of the substrate W. Alternatively, they may be arranged obliquely with respect to the short side direction and the long side direction of the substrate W.

[0125] As described above, in this embodiment, light is emitted to at least two reference areas arranged in a predetermined direction with the film forming area to perform reference measurement. This can reduce the influence of the posture of the substrate W on the measurement accuracy. Therefore, the accuracy of the reference measurement can be improved.

[0126] In addition, in the present embodiment, the film thickness is measured based on the results of reference measurement in reference regions R12a and R12b arranged with the film forming region R11 in the X direction and reference regions R12c and R12d arranged with the film forming region R11 in the Y direction intersecting the X direction. Therefore, the accuracy of the reference measurement can be further improved.

[0127] In addition, in this embodiment, the measurement is performed in the film forming area R11 and the reference area R12 while the light projecting and receiving unit 2903 is moved by the moving unit 2906. When the light projecting and receiving unit 2903 is moved, the posture of the optical fiber connected to the light projecting and receiving unit 2903 may change, thereby affecting the light amount of the emitted light. However, by performing reference measurement in the reference areas R12a to R12d, the influence of the change in light amount caused by the change in the posture of the optical fiber can also be reduced.

[0128] <8. Other Implementation Methods>

[0129] <8.1. Film forming device>

[0130] Fig.16 It is a schematic diagram showing the structure of a film forming apparatus 901 according to one embodiment.

[0131] In the film forming block 9301, a plurality of film forming chambers 9303a to 9303d for performing film forming processing on a substrate W and a mask storage chamber 9305 for storing masks before and after use are arranged around a transport chamber 9302 having an octagonal shape in a plan view. A transport robot 9302a for transporting the substrate W is arranged in the transport chamber 9302. In the following description, when the film forming chambers 9303a to 9303d are not particularly distinguished, they are sometimes referred to as the film forming chamber 9303.

[0132] In the conveying direction of the substrate W (arrow direction), a buffer chamber 9306, a swirl chamber 9307, and a transfer chamber 9308 are respectively arranged on the upstream and downstream sides of the film forming block 9301. During the manufacturing process, each chamber is maintained in a vacuum state. Fig.16 Although only one film forming block 9301 is shown in the figure, the film forming device 901 of this embodiment has a plurality of film forming blocks 9301 , and the plurality of film forming blocks 9301 have a structure connected by a connection device composed of a buffer chamber 9306 , a swirl chamber 9307 , and a delivery chamber 9308 .

[0133] The transfer robot 9302a carries the substrate W from the upstream transfer chamber 9308 to the transfer chamber 9302, transports the substrate W between the film forming chambers 9303, transports the mask between the mask storage chamber 9305 and the film forming chamber 9303, and carries the substrate W out of the transfer chamber 9302 to the downstream buffer chamber 9306.

[0134] The buffer chamber 9306 is a chamber for temporarily storing substrates W according to the operation status of the film forming apparatus 901. The buffer chamber 9306 is provided with a substrate storage rack (also referred to as a box) having a multi-layer structure. The substrate storage rack can store a plurality of substrates W while maintaining a horizontal state in which the processed surface (film forming surface) of the substrate W faces downward in the direction of gravity, and a lifting mechanism. The lifting mechanism lifts and lowers the substrate storage rack in order to match the layer and the conveying position of the substrate W being carried in or out. In this way, a plurality of substrates W can be temporarily stored and retained in the buffer chamber 9306.

[0135] The swirl chamber 9307 is provided with a device for changing the orientation of the substrate W. In the present embodiment, the swirl chamber 9307 rotates the orientation of the substrate W by 180 degrees by a conveying robot 9307a provided in the swirl chamber 9307. The conveying robot 9307a provided in the swirl chamber 9307 rotates 180 degrees while supporting the substrate W received by the buffer chamber 9306 and delivers it to the delivery chamber 9308, thereby exchanging the front end and the rear end in the conveying direction (arrow direction) of the substrate W in the buffer chamber 9306 and the delivery chamber 9308. As a result, the orientation of the substrate W when it is carried into the film forming chamber 9303 becomes the same orientation in each film forming block 9301, so that the scanning direction of the film formed on the substrate W and the orientation of the mask can be made consistent in each film forming block 9301. By setting such a structure, the orientation of the mask set in the mask storage chamber 9305 can be made consistent in each film forming block 9301, which can simplify the management of the mask and improve the usability.

[0136] The delivery chamber 9308 is a chamber for delivering the substrate W carried in by the delivery robot 9307a of the swirl chamber 9307 to the delivery robot 9302a of the downstream film forming block 9301. In this embodiment, as described later, the film thickness of the film formed on the substrate W is measured in the delivery chamber 9308. That is, the delivery chamber 9308 can be said to be an inspection chamber for inspecting the film formed on the substrate W.

[0137] The control system of the film forming device 901 includes a host device 9300 for controlling the entire production line and control devices 9309, 9310, 9311, 9313a to 9313d for controlling each component as a host computer, which can communicate via a wired or wireless communication line 9300a. The control devices 9313a to 9313d are arranged corresponding to the film forming chambers 9303a to 9303d, and control the film forming process in the film forming chambers. The control device 9309 controls the conveying robot 9302a. The control device 9310 controls the conveying robot arranged in the whirlpool chamber 9307. The control device 9311 controls the equipment for alignment and film thickness measurement in the delivery chamber 9308. The host device 9300 sends information related to the substrate W, instructions such as conveyance timing, etc. to each control device 9309, 9310, 9311, 9313a to 9313d, and each control device 9309, 9310, 9311, 9313a to 9313d controls each component based on the received instructions.

[0138] <8.2. Handover Room>

[0139] Fig.17 1 is a schematic diagram showing an overview of the delivery chamber 9308. The delivery chamber 9308 is provided with a substrate support 950 for supporting the substrate W and a film thickness measuring device 9120 for measuring the film thickness of the substrate W supported by the substrate support 950. In addition, since the elements constituting the film thickness measuring device 9120 can have the same structure as the elements of the film thickness measuring device 120 of the above-mentioned embodiment, the same reference numerals are attached and the description thereof is omitted.

[0140] <8.3. Substrate Support>

[0141] Fig.18 9 is a plan view for explaining the substrate support part 950. The substrate support part 950 supports the substrate W. The substrate W supported by the substrate support part 950 is in a rectangular shape including the side Wa, the side Wb facing the side Wa, and the side Wc connecting the sides Wa and Wb. In addition, in the present embodiment, the sides Wa and Wb are long sides, and the side Wc and the side Wd facing the side Wc are short sides. The substrate support part 950 includes a frame member 951 and a plurality of support members 952 (952a to 952d).

[0142] The frame member 951 is a member that supports the plurality of support members 952. The frame member 951 is supported, for example, by a wall portion of the delivery chamber 9308. The frame member 951 may be provided so as to be movable in a predetermined direction so as to be able to perform alignment of the substrates W supported by the plurality of support members 952. In addition, the frame member 951 is provided so as to cover the entire circumference of the substrate W supported by the support members 952. However, a cutout or the like may be provided in a portion of the frame member 951 to avoid interference with the hand of the transfer robot 9307a.

[0143] The plurality of support members 952 are members for supporting the substrate W. The plurality of support members 952 include a support member group 952A which is separated from each other so as to support a portion along the side Wa in the peripheral portion of the substrate W. The support member group 952A is composed of a plurality of support members 952a. In addition, the plurality of support members 952 include a support member group 952B which is separated from each other so as to support a portion along the side Wb in the peripheral portion of the substrate W. The support member group 952B is composed of a plurality of support members 952b. In addition, the plurality of support members 952 include a support member group 952C which is separated from each other so as to support a portion along the side Wc in the peripheral portion of the substrate W. The support member group 952C is composed of a plurality of support members 952c. In addition, the plurality of support members 952 include a support member group 952D which is separated from each other so as to support a portion along the side Wd in the peripheral portion of the substrate W. The support member group 952D is composed of a plurality of support members 952d. In addition, in the present embodiment, the support member 952 is a leaf spring. However, the support member 952 may also be a pin, a protrusion, or other structure.

[0144] In this embodiment, the substrate W is supported by the plurality of support members 952 of the substrate support portion 950, so the substrate W tends to be easily bent compared to the case where the substrate W is supported by an electrostatic chuck or the like. However, in this embodiment, as described above, the light intensity is measured in a plurality of reference areas parallel to the film forming area. Thus, the influence of the change in the posture (bending mode) of the substrate W on the accuracy of the reference measurement can be suppressed.

[0145] In addition, in the present embodiment, the film thickness measuring device 9120 performs measurement in the film thickness measuring region R1 near the support member group 952C of the substrate W. Therefore, if the intervals between the plurality of support members 952c become relatively large, the deflection of the substrate W near the film thickness measuring region R1 may become larger. This may affect the film thickness of the film formed in the film thickness measuring region R1. Therefore, in the present embodiment, the support members 952c constituting the support member group 952C are arranged at intervals such that the variation value of the film thickness caused by the deflection of the portion supported by the support member group 952C of the substrate W becomes below a threshold value. The following is a detailed description.

[0146] Fig.19A and Fig.19B It is a diagram for explaining the influence of the posture of the substrate W on the film thickness value.

[0147] Fig.19AIndicates the variation in the deviation of the film thickness value relative to the actual height of the substrate W when the reference height of the substrate W is set to Z=0. The reference height of the substrate W can be set, for example, to the height of the substrate W assuming that the substrate W is not bent when supported by the support member 952. In other words, the reference height of the substrate W can be set to the height of the support surface of the support member 952 relative to the substrate W. In addition, the reference value dr of the film thickness value is the film thickness of the film formed on the substrate W when the evaporation source 8 performs an evaporation process on the substrate W at the reference height under specified conditions. In other words, Fig.19A This shows that when the height of the substrate W is different, the film thickness of the film actually formed on the substrate W varies even if the vapor deposition source 8 performs the vapor deposition process under the same conditions.

[0148] For example, when the height of the film forming position of the substrate W is higher than the reference height (Z>0) due to the deflection of the substrate W, the film thickness of the film formed at the film forming position of the substrate W is smaller than the reference value dr. On the other hand, when the height of the film forming position of the substrate W is lower than the reference height (Z<0) due to the deflection of the substrate W, the film thickness of the film formed at the film forming position of the substrate W is larger than the reference value dr.

[0149] Fig.19B θ represents the variation of the film thickness value with respect to the angle of the substrate W. Here, it is shown that the more the film formation position of the substrate W is inclined relative to the horizontal state (θ=0), the film thickness of the film formed at the film formation position of the substrate W becomes smaller than the reference value dr.

[0150] In addition, according to Fig.19A as well as Fig.19B , assuming that the slope of the approximate curve 1901 is a and the slope of the approximate curve 1902 is b, the variation Δd of the film thickness with respect to the reference value dr can be estimated by the following mathematical formula (3).

[0151] Δd=aZ+bθ (3)

[0152] In this way, in order to suppress the variation of the film thickness value of the film formed on the substrate W, it is necessary to reduce the deviation of the height and angle of the substrate W. When the support member group 952C is used to support the vicinity of the region R1 for film thickness measurement as in the present embodiment, the interval between the support members 952c constituting the support member group 952C may be set according to the tolerance of the deviation of the height and angle of the substrate W.

[0153] Specifically, the larger the interval between the support members 952c, the greater the influence of the height and angle deviations caused by the deflection of the substrate W. That is, the maximum value Zmax of the deviation of the height of the film forming position relative to the reference and the maximum value θmax of the angle of the film forming position relative to the horizontal plane depend on the interval L between the support members 952c. Therefore, for example, when the threshold value of the allowable variation Δd is set to Δdth, by setting the interval L so as to satisfy the following mathematical formula (4), the variation of the film thickness can be brought within a desired range.

[0154] Δdth≥aZmax+bθmax (4)

[0155] The maximum value Zmax and the maximum value θmax depend not only on the distance L but also on the size and rigidity of the substrate W. Therefore, the distance L may be set so as to satisfy the above-mentioned formula (4) in consideration of these conditions.

[0156] <9. Method for manufacturing electronic device>

[0157] Next, an example of a method for manufacturing an electronic device is described. Hereinafter, as an example of an electronic device, the structure and manufacturing method of an organic EL display device are illustrated. For example, Figure 1 One transfer chamber 2 , one terminal chamber 3 , and two film forming chambers 4 are shown as one cluster, and three clusters are connected to provide first to sixth film forming chambers described later.

[0158] First, the manufactured organic EL display device will be described. Fig. 20A is an overall diagram of an organic EL display device 50, Fig. 20B This is a diagram showing the cross-sectional structure of one pixel.

[0159] like Fig. 20A As shown, a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix in a display region 51 of an organic EL display device 50. Each light emitting element has a structure including an organic layer sandwiched by a pair of electrodes, and the details will be described later.

[0160] In addition, the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 51. In the case of a color organic EL display device, a pixel 52 is composed of a combination of multiple sub-pixels of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that display different light emission from each other. Pixel 52 is mostly composed of a combination of three sub-pixels of a red (R) light-emitting element, a green (G) light-emitting element, and a blue (B) light-emitting element, but is not limited to this. Pixel 52 only needs to include at least one sub-pixel, preferably includes two or more sub-pixels, and more preferably includes three or more sub-pixels. As the sub-pixels constituting pixel 52, for example, it can also be a combination of four sub-pixels of a red (R) light-emitting element, a green (G) light-emitting element, a blue (B) light-emitting element, and a yellow (Y) light-emitting element.

[0161] Fig. 20B yes Fig. 20A Schematic diagram of partial cross section at line AB of . The pixel 52 has a plurality of sub-pixels composed of organic EL elements on a substrate 53, and the organic EL element includes a first electrode (anode) 54, a hole transport layer 55, any one of a red layer 56R, a green layer 56G and a blue layer 56B, an electron transport layer 57 and a second electrode (cathode) 58. Among them, the hole transport layer 55, the red layer 56R, the green layer 56G, the blue layer 56B, and the electron transport layer 57 are equivalent to organic layers. The red layer 56R, the green layer 56G, and the blue layer 56B are formed into patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red, green, and blue, respectively.

[0162] In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57 and the second electrode 58 may be formed in common over the plurality of light-emitting elements 52R, 52G, 52B, or may be formed for each light-emitting element. Fig. 20B As shown, on the basis of the hole transport layer 55 being formed as a common layer throughout multiple sub-pixel regions, the red layer 56R, the green layer 56G, and the blue layer 56B can be formed separately for each sub-pixel region, and on this basis, the electron transport layer 57 and the second electrode 58 can be formed as a common layer throughout multiple sub-pixel regions.

[0163] In order to prevent short circuits between adjacent first electrodes 54, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0164] exist Fig. 20BIn the figure, the hole transport layer 55 and the electron transport layer 57 are represented by one layer, but according to the structure of the organic EL display element, they can also be formed by multiple layers having a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55 can also be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer can also be formed between the second electrode 58 and the electron transport layer 57.

[0165] The red layer 56R, the green layer 56G, and the blue layer 56B can be formed by a single light-emitting layer, or by stacking a plurality of layers. For example, the red layer 56R can be composed of two layers, with the red light-emitting layer forming the upper layer, and the hole transport layer or the electron blocking layer forming the lower layer. Alternatively, the lower layer can be formed by the red light-emitting layer, and the upper layer can be formed by the electron transport layer or the hole blocking layer. By arranging a layer on the lower or upper side of the light-emitting layer in this way, the light-emitting position in the light-emitting layer is adjusted and the optical path length is adjusted, thereby having the effect of improving the color purity of the light-emitting element.

[0166] In addition, although the example of the red layer 56R is shown here, the green layer 56G and the blue layer 56B may also adopt the same structure. In addition, the number of stacked layers may be more than 2 layers. Moreover, layers of different materials may be stacked, such as a light-emitting layer and an electron blocking layer, or layers of the same material may be stacked, such as stacking more than 2 light-emitting layers.

[0167] Next, an example of a method for manufacturing an organic EL display device is specifically described. Here, it is assumed that the red layer 56R is composed of two layers, the lower layer 56R1 and the upper layer 56R2, and the green layer 56G and the blue layer 56B are composed of a single light-emitting layer.

[0168] First, a substrate 53 is prepared on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed. The material of the substrate 53 is not particularly limited, and can be made of glass, plastic, metal, etc. In this embodiment, as the substrate 53, a substrate in which a polyimide film is laminated on a glass substrate is used.

[0169] A resin layer such as acrylic or polyimide is applied by bar coating or spin coating on the substrate 53 having the first electrode 54 formed thereon, and the resin layer is patterned by photolithography to form an opening in the portion having the first electrode 54 formed thereon, thereby forming an insulating layer 59. The opening corresponds to a light emitting region where the light emitting element actually emits light.

[0170] The substrate 53 with the patterned insulating layer 59 is carried into the first film forming chamber, and the hole transport layer 55 is formed as a common layer on the first electrode 54 of the display region. The hole transport layer 55 is formed using a mask having an opening formed for each display region 51 that will eventually become a panel portion of each organic EL display device.

[0171] Next, the substrate 53 formed up to the hole transport layer 55 is moved into the second film forming chamber. The substrate 53 and the mask are aligned, and the substrate is placed on the mask, and a red layer 56R is formed on the hole transport layer 55 in the portion where the red-emitting element of the substrate 53 is configured (the region where the red sub-pixel is formed). Here, the mask used in the second film forming chamber is a high-precision mask with openings formed only in multiple regions that become red sub-pixels among multiple regions on the substrate 53 that become sub-pixels of the organic EL display device. As a result, the red layer 56R including the red light-emitting layer is formed only in the region that becomes the red sub-pixel among the regions that become the multiple sub-pixels on the substrate 53. In other words, the red layer 56R is not formed in the region that becomes the blue sub-pixel or the region that becomes the green sub-pixel among the regions that become the multiple sub-pixels on the substrate 53, but is selectively formed in the region that becomes the red sub-pixel.

[0172] Similar to the film formation of the red layer 56R, the green layer 56G is formed in the third film forming chamber, and the blue layer 56B is further formed in the fourth film forming chamber. After the film formation of the red layer 56R, the green layer 56G, and the blue layer 56B is completed, the electron transport layer 57 is formed in the entire display area 51 in the fifth film forming chamber. The electron transport layer 57 is formed as a layer common to the three color layers 56R, 56G, and 56B.

[0173] The substrate formed up to the electron transport layer 57 is moved to the sixth film forming chamber to form the second electrode 58. In the present embodiment, the film formation of each layer is performed by vacuum evaporation in the first film forming chamber to the sixth film forming chamber. However, the present invention is not limited to this. For example, the film formation of the second electrode 58 in the sixth film forming chamber can also be performed by sputtering. After that, the substrate formed up to the second electrode 58 is moved to the sealing device, and the protective layer 60 is formed by plasma CVD (sealing process), and the organic EL display device 50 is completed. In addition, here, the protective layer 60 is formed by the CVD method, but it is not limited to this, and it can also be formed by the ALD method or the inkjet method.

[0174] Here, the film formation in the first to sixth film forming chambers is performed using a mask having openings corresponding to the pattern of each layer to be formed. During film formation, after the relative position of the substrate 53 and the mask is adjusted (aligned), the substrate 53 is placed on the mask to perform film formation.

[0175] <10. Others>

[0176] The present invention can also be implemented by providing a program that implements one or more functions of the above-mentioned embodiments to a system or device via a network or storage medium, and one or more processors in a computer of the system or device read and execute the program. In addition, it can also be implemented by a circuit (such as an ASIC) that implements one or more functions.

[0177] The present invention is not limited to the above-described embodiments, and various modifications and changes can be made within the scope of the gist of the invention.

[0178] Description of Reference Numerals

[0179] 1: film forming device, 5A~5B: conveying unit, 6A~6D: carrier, 7A~7B: moving unit, 63: mask holding part.

Claims

1. A film thickness measuring device, characterized in that: The film thickness measuring device is disposed in a film forming chamber for forming a film on a substrate or in a delivery chamber for delivering the substrate to the film forming chamber. The film thickness measuring device comprises: a light receiving unit that receives reflected light emitted from an emitting unit that emits light to the substrate and reflected by the substrate; and a determination unit that determines a film thickness of a film formed in a film forming region of the substrate based on a light reception result of the light receiving unit, The determination component determines the thickness of the film formed in the film forming area based on the light reception result regarding the reflected light reflected from the film forming area where film formation is performed and the reflected light reflected from the first reference area and the second reference area arranged in the first direction with the film forming area of ​​the substrate.

2. The film thickness measuring device according to claim 1, characterized in that: The determination component determines the film thickness of the film formed in the film forming area based on the light reception results regarding the reflected light reflected by the film forming area arranged between the first reference area and the second reference area in the first direction of the substrate, the reflected light reflected by the first reference area, and the reflected light reflected by the second reference area.

3. The film thickness measuring device according to claim 2, characterized in that: The determination component determines the film thickness based on the light reception results of reflected light reflected by the film forming area which is arranged between the first reference area and the second reference area in the first direction of the substrate and between the third reference area and the fourth reference area of ​​the substrate in the second direction intersecting the first direction, reflected light reflected by the first reference area, reflected light reflected by the second reference area, reflected light reflected by the third reference area, and reflected light reflected by the fourth reference area.

4. The film thickness measuring device according to claim 1, characterized in that: The film thickness measuring device further comprises: light source; an optical fiber connecting the light source and the emitting portion; and A moving member moves the emitting unit and the light receiving unit in the first direction.

5. The film thickness measuring device according to any one of claims 1 to 4, characterized in that: The determination component determines the film thickness of the film formed in the film forming area based on the light reception result regarding the reflected light reflected by the film forming area, and the film forming area is an area for film thickness measurement set separately from the area where the film is formed to form a display element of the electronic device.

6. A film forming device, comprising the film thickness measuring device according to claim 5, characterized in that: The film forming apparatus includes a substrate support portion that supports the substrate using a plurality of support members. The light receiving unit receives reflected light of the outgoing light reflected by the substrate supported by the substrate supporting unit.

7. The film forming device according to claim 6, characterized in that: The substrate is in a rectangular shape including a first side and a second side facing the first side. The plurality of supporting members include: a first supporting member group, wherein the supporting members are provided separately from each other in a manner of supporting a portion of the peripheral portion of the substrate along the first side; and a second supporting member group, wherein the supporting members are provided separately from each other in a manner of supporting a portion of the peripheral portion along the second side. In a state where the substrate is supported by the substrate supporting portion, a region where a film is to be formed in order to form a display element of the electronic device is located between the first supporting member group and the second supporting member group.

8. The film forming device according to claim 7, characterized in that: The substrate includes a third side connecting the first side and the second side, The film formation region is provided between a region where a film is formed in order to form a display element of the electronic device and the third side.

9. The film forming device according to claim 8, characterized in that: The third side is a short side of the substrate.

10. The film forming device according to claim 9, characterized in that: The plurality of support members include a third support member group in which support members are provided separately from each other so as to support a portion of the peripheral portion along the third side.

11. The film forming device according to claim 10, characterized in that: The support members constituting the third support member group are provided at intervals such that a variation value of the film thickness due to deflection of a portion of the substrate supported by the third support member group becomes equal to or smaller than a threshold value.

12. A film forming device, comprising the film thickness measuring device according to any one of claims 1 to 4, characterized in that: The film forming device includes a substrate support portion, the substrate support portion adsorbing and supporting the substrate by electrostatic force, The light receiving unit receives reflected light of the outgoing light reflected by the substrate supported by the substrate supporting unit.

13. A method for measuring film thickness, characterized in that: have: a light receiving step, in which reflected light emitted to the substrate and reflected by the substrate is received in a film forming chamber for forming a film on the substrate or in a delivery chamber for delivering the substrate to the film forming chamber; as well as a determining step in which a film thickness of a film formed in a film forming region of the substrate is determined based on a light receiving result in the light receiving step, In the determination process, the thickness of the film formed in the film forming area is determined based on the light receiving results regarding the reflected light reflected from the film forming area where film formation is performed and the reflected light reflected from the first reference area and the second reference area arranged in the first direction with the film forming area of ​​the substrate.

14. A method for manufacturing an electronic device, characterized in that: include: a film forming step in which a film is formed on a substrate; as well as A measuring step of measuring the film thickness of the film formed on the substrate in the film forming step by the film thickness measuring method according to claim 13.

Images