Reaction chamber and thin film deposition equipment

By designing the reaction chamber as a combined structure, the bottom plate can be detached and adapted to heating plates and pumping methods of different sizes, the problem of insufficient flexibility of the existing reaction chamber is solved, and the flexibility and versatility to meet the needs of diverse processes is achieved, while reducing hardware replacement and development costs.

CN119553248APending Publication Date: 2025-03-04PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO LTD
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Patent Information

Application Number
CN202411813179.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-10
Publication Date
2025-03-04

AI Technical Summary

Technical Problem

The existing reaction chamber design is insufficient, making it difficult to meet the needs of diverse processes. Especially when replacing heating plates of different sizes and adjusting the air extraction method, it is necessary to make major modifications to the cavity structure, which is time-consuming and labor-intensive and costly.

Method used

By improving the integrated cavity structure into a combined cavity structure, the reaction cavity is split into a cavity and a bottom plate. The bottom plate is detachably installed with the cavity, and an adjustable heating disk through-hole and air extraction port are provided on the bottom plate to adapt to heating disks and air extraction methods of different sizes.

Benefits of technology

It realizes the flexibility and versatility of the reaction chamber, can adapt to diverse process needs, reduces hardware replacement and development costs, and does not require modification of the cavity structure.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention discloses a reaction cavity and thin film deposition equipment, the reaction cavity comprises a cavity body and two bottom plates, the cavity body is internally provided with a first chamber and a second chamber, the first chamber and the second chamber are adjacently arranged and vertically penetrate through the cavity body, and the bottom plates are provided with heating plate through holes; and the two bottom plates are detachably sealed at the bottoms of the first chamber and the second chamber. According to the invention, an integrated cavity is improved into a combined cavity and bottom plate structure, so that when heating plates with different sizes are required to be replaced, the bottom plate can be detached to replace the heating plates so as to adapt to the heating plates with different sizes and meet different process requirements, and the flexibility and universality of the reaction cavity are improved; the cavity structure does not need to be modified, and hardware replacement and development cost is saved.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a reaction chamber and a thin film deposition device. Background Art

[0002] In the field of thin film deposition technology, precise control of reaction sources and gases is crucial to forming high-quality thin films on the surface of wafers. This process is usually completed in a reaction chamber, where the type of heating plate and the choice of exhaust method have a decisive influence on the deposition effect. However, current reaction chamber designs generally face the problem of insufficient flexibility. Most of them can only operate according to the original design requirements. Once the process requirements change, the entire reaction chamber needs to be redesigned, which greatly limits its application in diversified process scenarios. In particular, the integrated reaction chamber is often designed for specific processes and lacks the necessary scalability. Whether it is replacing heating plates of different sizes or adjusting the exhaust method, it means that the chamber structure needs to be significantly modified, which is not only time-consuming and labor-intensive, but also accompanied by high hardware replacement costs. Therefore, it is particularly important to develop a reaction chamber design that can adapt to diversified process requirements and has good scalability. Summary of the invention

[0003] The embodiments of the present invention provide a reaction chamber and a thin film deposition device, aiming to solve the problem that the existing reaction chamber has poor flexibility and is difficult to adapt to various process requirements.

[0004] In a first aspect, the present invention provides a reaction chamber, comprising: a chamber body and two bottom plates, wherein a first chamber and a second chamber are provided in the chamber body, wherein the first chamber and the second chamber are adjacently arranged and penetrate the chamber body from top to bottom, and a heating plate through hole is provided on the bottom plate;

[0005] The two bottom plates are detachably sealed at the bottom of the first chamber and the second chamber.

[0006] Furthermore, the cavity is provided with two side air suction ports which penetrate the cavity from top to bottom, and the two side air suction ports are adjacently arranged between the first chamber and the second chamber.

[0007] Furthermore, the reaction chamber further comprises a sealing member, and the sealing member is detachably sealed to the two side exhaust ports.

[0008] Furthermore, an isolation portion is provided between the top of the first chamber and the top of the second chamber, and the isolation portion extends from an inner wall on one side of the cavity toward an inner wall on the other side opposite to the cavity without being connected to form a gap; wherein the sealing member is detachably spliced ​​at the gap to isolate the first chamber and the second chamber.

[0009] Furthermore, the sealing member is a triangular block, the wide end of the triangular block is in contact with the inner wall of the cavity, the wide end of the triangular block blocks the two side air suction ports, and the narrow end of the triangular block is in contact with the isolation portion.

[0010] Furthermore, a bottom air suction port is provided on the bottom plate.

[0011] Furthermore, the first chamber and the second chamber are both provided with a film transmission valve port, and the two film transmission valve ports radially penetrate from the side wall of the cavity to the first chamber and the second chamber respectively.

[0012] Furthermore, the reaction chamber also includes two purge bushings, on which a purge air duct is provided, and the two purge bushings are detachably arranged on the two film-transmitting valve ports, respectively, and the cavity body is provided with two purge air holes, and the two purge air holes are respectively connected from the bottom of the cavity body to the two film-transmitting valve ports; wherein the purge air duct is connected with the purge air holes to guide the purge gas to the first chamber and the second chamber.

[0013] Furthermore, the purge bushing is provided with a through air inlet along the radial direction of the cavity, the purge air duct includes an annular air duct and a plurality of air inlet holes, the annular air duct is opened circumferentially around the air inlet, the purge air holes are connected with the annular air duct, and a plurality of the air inlet holes are provided on the annular air duct to connect the annular air duct with the air inlet.

[0014] Furthermore, a limiting groove is provided on the purge bushing, and a limiting boss is provided on the flap valve port. The purge bushing is fixed to the flap valve port through the cooperation of the limiting groove and the limiting boss.

[0015] Furthermore, the reaction chamber also includes two chamber liners, and the chamber liners are provided with a liner heating plate through hole and / or a liner transmission valve port, and the two chamber liners are respectively detachably arranged in the first chamber and the second chamber.

[0016] Furthermore, an annular positioning step is provided on the inner wall of the first chamber and the second chamber, and a positioning boss is protruding from the bottom of the chamber liner, and the positioning boss is placed in the annular positioning step.

[0017] In a second aspect, the present invention further provides a thin film deposition device, comprising the above-mentioned reaction chamber.

[0018] The present invention provides a reaction chamber and a thin film deposition device. The reaction chamber comprises: a chamber body and two bottom plates. The chamber body comprises a first chamber and a second chamber. The first chamber and the second chamber are connected from top to bottom. A heating plate through hole is arranged on the bottom plate. The two bottom plates are detachably sealed at the bottom of the first chamber and the second chamber. By improving the integrated chamber body into a combined structure of the chamber and the bottom plate, when there is a need to replace heating plates of different sizes, the bottom plate can be removed to replace the heating plates so as to adapt to heating plates of different sizes and meet different process requirements. The flexibility and versatility of the reaction chamber are improved, and there is no need to modify the chamber body structure, thus saving hardware replacement and development costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0020] Figure 1 A schematic diagram showing an explosion of a reaction chamber according to an embodiment of the present invention is shown;

[0021] Figure 2 A schematic diagram showing a chamber of a reaction chamber according to an embodiment of the present invention is shown;

[0022] Figure 3 A schematic diagram of the assembly of the reaction chamber according to an embodiment of the present invention is shown;

[0023] Figure 4 A schematic diagram showing a bottom plate of a reaction chamber according to an embodiment of the present invention is shown;

[0024] Figure 5 A schematic diagram showing a sealing member of a reaction chamber according to an embodiment of the present invention is shown;

[0025] Figure 6 A schematic diagram showing a purge liner of a reaction chamber according to an embodiment of the present invention is shown;

[0026] Figure 7 A schematic diagram showing the flow direction of the purge gas flow in the reaction chamber according to an embodiment of the present invention is shown;

[0027] Figure 8 Another schematic diagram showing the flow direction of the purge gas flow in the reaction chamber according to an embodiment of the present invention;

[0028] Fig. 9 A schematic diagram showing a chamber liner of a reaction chamber according to an embodiment of the present invention is shown;

[0029] Fig.10 A cross-sectional schematic diagram of a reaction chamber according to an embodiment of the present invention is shown;

[0030] Reference numerals:

[0031] 1. Cavity; 11. First chamber; 12. Second chamber; 13. Side exhaust port; 14. Isolation part; 15. Notch; 16. Transmission valve port; 17. Purge air hole; 18. Limiting boss; 19. Annular positioning step; 2. Bottom plate; 21. Heating plate through hole; 22. Bottom exhaust port; 23. First sealing ring; 3. Sealing element; 4. Purge bushing; 41. Air inlet; 42. Annular air passage; 43. Air inlet; 44. Limiting groove; 5. Chamber bushing; 51. Bushing heating plate through hole; 52. Bushing transmission valve port; 53. Positioning boss; 54. Second sealing ring. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but are not used to limit the present invention. In addition, in the drawings, structures with similar or identical structures are represented by the same reference numerals.

[0034] The embodiments of the present invention propose a reaction chamber and a thin film deposition device, which solve the problems of poor flexibility and poor scalability of the existing reaction chamber. By improving the integrated chamber structure to a combined chamber structure, it can adapt to different process requirements, thereby improving the flexibility and versatility of the reaction chamber.

[0035] The embodiments of the present invention are to solve the above problems of poor flexibility and poor expansibility, and the specific ideas are as follows:

[0036] The integrated chamber structure is improved to a combined chamber structure, and the reaction chamber is divided into a chamber and a bottom plate. The bottom plate is detachably mounted on the chamber, and a heating plate through hole is provided on the bottom plate. When a heating plate of a different size needs to be replaced, for example, a small-sized heating plate is to be replaced, the original bottom plate is first removed, and the small-sized heating plate is replaced, and then the bottom plate with the small-sized heating plate through hole is selected and installed with the chamber, thereby completing the replacement of heating plates of different sizes to meet different process requirements.

[0037] In addition, in order to further improve the expandability of the reaction chamber, a bottom exhaust port can be opened on the bottom plate. When there is a high demand for exhaust uniformity, a seal can be used to block the side exhaust port on the chamber, and the bottom exhaust port on the bottom plate can be used to perform bottom exhaust, thereby adapting to different exhaust methods.

[0038] Furthermore, a purge bushing can be set at the transmission valve port of the cavity. When there is a need to purge the transmission channel, the purge bushing can be installed at the transmission valve port to purge the transmission channel and reduce the particles generated in the dead zone of the transmission valve port.

[0039] In addition, in order to reduce the size of the cavity, the inner diameter of the cavity can be changed by designing a cavity bushing. Some processes require a smaller cavity, which can be achieved by adding a cavity bushing in the cavity to adapt to cavities of different sizes.

[0040] It can be seen that the above-mentioned combined reaction chambers can be freely combined according to process requirements. While meeting diverse process requirements, they can also reduce the specifications of the reaction chambers, reduce the cost of hardware replacement, and provide flexible design configuration for the experimental machine.

[0041] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0042] See also Figure 1-Figure 10 An embodiment of the present invention shows a reaction chamber, comprising: a chamber body 1 and two bottom plates 2, wherein a first chamber 11 and a second chamber 12 are provided in the chamber body 1, wherein the first chamber 11 and the second chamber 12 are adjacently arranged and penetrate the chamber body 1 from top to bottom, and a heating plate through hole 21 is provided on the bottom plate 2; wherein the two bottom plates 2 are detachably sealed at the bottom of the first chamber 11 and the second chamber 12.

[0043] Reference Figure 1-Figure 3Specifically, the cavity 1 includes two chambers, namely, a first chamber 11 and a second chamber 12, which are connected from top to bottom and have a circular inner cavity formed therein. The two chambers are respectively provided with a bottom plate 2 for sealing, and the two bottom plates 2 are respectively fixed at the bottom of the first chamber 11 and the second chamber 12 for sealing, and a first sealing ring 23 is arranged between the upper surface of the bottom plate 2 and the lower surface of the cavity 1 to improve the sealing effect. A heating plate through hole 21 is provided at the center of the bottom plate 2, and the through hole size is not unique and can be designed according to the size of the different heating plate handles. The heating plate through hole 21 is used for the heating plate handle to pass through, and heating plates of different sizes are adapted to heating plate through holes 21 of different sizes. The two bottom plates 2 are respectively detachably mounted at the bottom of the first chamber 11 and the second chamber 12, and there are many ways to detachably mount the bottom plate 2, for example, threaded holes and positioning holes are provided on the bottom of the cavity 1 and the bottom plate 2, and screws and positioning pins are used for matching and mounting, so as to fix the bottom plate 2 to the bottom of the cavity 1. Of course, it is understandable that other disassembly and assembly structures are also possible, which are not limited here. If a heating disk of a different size is replaced, the bottom plate 2 is disassembled, a new heating disk is replaced, a matching bottom plate 2 is selected, the heating disk through hole 21 of the bottom plate 2 matches the size of the disk handle of the new heating disk, and the bottom plate 2 is installed to the bottom of the chamber to complete the replacement of the heating disk, so that heating disks of different sizes can be adapted.

[0044] Through this embodiment, through the structure in which the base plate 2 and the cavity 1 are detachably installed, different base plates 2 are provided with heating disk through holes 21 of different sizes. When there is a need to replace heating disks of different sizes, the heating disks can be replaced by removing the base plate 2. Heating disks of different sizes can be adapted to meet different process requirements, thereby improving the flexibility and versatility of the reaction chamber. There is no need to modify the structure of the cavity 1, thus saving hardware replacement and development costs.

[0045] Reference Figure 2 In one embodiment, the cavity 1 is provided with two side exhaust ports 13 that penetrate the cavity 1 vertically, and the two side exhaust ports 13 are adjacently arranged between the first chamber 11 and the second chamber 12. Specifically, two side exhaust ports 13 are provided for two chambers respectively, and the two side exhaust ports 13 are located between the two chambers, and the two side exhaust ports 13 are arranged adjacently. The side exhaust port 13 passes through from the bottom of the cavity 1 to the top of the cavity 1, that is, the side exhaust port 13 is a vertical channel in the cavity 1, the upper side of the side exhaust port 13 is on the upper surface of the cavity 1, and the lower side of the side exhaust port 13 is on the lower surface of the cavity 1, and the upper side of the side exhaust port 13 is connected to the top of the chamber. The lower side of the side exhaust port 13 is connected to a vacuum pump, and the vacuum of the two chambers is completed through the side exhaust port 13 to ensure the vacuum degree of the chamber and the uniformity of the thin film deposition.

[0046] Reference Figure 1 , Figure 3 and Figure 4 In this embodiment, the reaction chamber further includes a seal 3, which is detachably sealed to the two side exhaust ports 13, and a bottom exhaust port 22 is provided on the bottom plate 2. Specifically, in order to realize the bottom exhaust method of the reaction chamber, a bottom exhaust port 22 can be provided on the bottom plate 2, and another seal 3 can be added to close the two side exhaust ports 13 through the seal 3. Specifically, the seal 3 can be placed on the upper surface of the cavity 1 to block the upper side of the side exhaust port 13. In this way, the gas will not flow to the side exhaust port 13 but all flow to the bottom exhaust port 22, thereby realizing the bottom exhaust method. The technicians can choose side exhaust or bottom exhaust according to actual needs. When the exhaust uniformity requirement is not high, the bottom plate 2 without the bottom exhaust port 22 can be selected to realize side exhaust through the side exhaust port 13 on the cavity 1. When the demand for exhaust uniformity is high, a bottom plate 2 with a bottom exhaust port 22 is selected, and bottom exhaust is achieved through the bottom exhaust port 22 on the bottom plate 2.

[0047] Reference Figure 2 and Figure 3 In this embodiment, an isolation portion 14 is provided between the top of the first chamber 11 and the top of the second chamber 12. The isolation portion 14 extends from one inner wall of the chamber 1 toward the other inner wall opposite to the chamber 1 and is not connected to form a gap 15. The two side air extraction ports 13 are provided at the gap 15; wherein the sealing member 3 is detachably spliced ​​at the gap 15 to block the two side air extraction ports 13 and isolate the first chamber 11 from the second chamber 12. Specifically, the top of the first chamber 11 is connected to the top of the second chamber 12. In order to avoid mutual interference, the isolation portion 14 is provided at the top of the first chamber 11 and the second chamber 12 to separate the two chambers so that the two chambers are independent of each other. The isolating part 14 is arranged between the tops of the two chambers, and the overall structure is a large triangle. The wider side of the isolating part 14 is connected to the inner wall of the top of the cavity 1, and the narrower side of the isolating part 14 points to the inner wall of the other side of the opposite top of the cavity 1, but is not connected to the inner wall of the other side of the top of the cavity 1, so that a gap 15 is formed at the narrower front end of the isolating part 14. The shape and structure of the sealing part 3 can be spliced ​​into this gap 15, so as to form a real isolation structure with the isolating part 14 to separate the two chambers. At the same time, the positions of the two side exhaust ports 13 are set at the gap 15, so that the sealing part 3 is spliced ​​into the gap 15 while blocking the two side exhaust ports 13, thereby avoiding the mutual interference of the airflows of the two chambers when exhausting at the bottom.

[0048] Reference Figure 5In a specific implementation, the seal 3 is a triangular block, which is located above the two side air extraction ports 13 to block the two side air extraction ports 13, the wide end of the triangular block fits the inner wall of the cavity 1, and the narrow end of the triangular block fits the isolation portion 14. Specifically, the seal 3 is a small triangular block as a whole, and the seal 3 and the isolation portion 14 are arranged in a large triangular block and the tip of the small triangular block is directly opposite. The small triangular block is placed on the upper surface of the cavity 1, and the bottom of the wide end of the small triangular block just blocks the two side air extraction ports 13, the wide end of the small triangular block fits tightly with the inner wall of the top of the cavity 1, and the narrow end of the small triangular block fits tightly with the narrow end of the large triangular block. The narrow end of the small triangular block is also provided with a threaded hole, which is fixed to the upper surface of the cavity 1 by screws. Of course, it can be understood that other detachable connection methods can also be used. Through the structure of the small triangular block of this embodiment, the isolation of the two chambers and the blocking of the two side air extraction ports 13 are achieved, and the structure is simple and easy to disassemble and assemble.

[0049] Reference Figure 1 and Figure 2 In one embodiment, the first chamber 11 and the second chamber 12 are both provided with a wafer transfer valve port 16, and the two wafer transfer valve ports 16 are radially penetrated from the side wall of the cavity 1 to the first chamber 11 and the second chamber 12 respectively. Specifically, both chambers are equipped with a wafer transfer valve port 16, and the two wafer transfer valve ports 16 radially penetrate the side wall of the cavity 1 and the interior of the chamber, so as to facilitate the transfer of wafers. The wafer transfer valve port 16 is used to achieve safe transfer of wafers between different process steps. A gate valve is placed at the wafer transfer valve port 16, and the entry and exit of the manipulator is achieved by controlling the switch of the gate valve. When wafer transfer is required, the valve is opened, and the manipulator transfers the wafer into the cavity. When it is not required, the valve is closed.

[0050] Reference Figure 2 and Figure 6In the present embodiment, the reaction chamber further comprises two purge bushings 4, on which purge air passages are arranged, and the two purge bushings 4 are detachably arranged at the two transmission valve ports 16, respectively, and the chamber body 1 is provided with two purge air holes 17, and the two purge air holes 17 are respectively connected from the bottom of the chamber body 1 to the two transmission valve ports 16; wherein, the purge air passages are connected with the purge air holes 17 to guide the purge gas to the first chamber 11 and the second chamber 12. Specifically, in order to reduce the particles generated in the dead zone of the transmission valve port 16, the transmission channel is purged by arranging the purge bushing 4 at the transmission valve port 16. Specifically, two purge air holes 17 for introducing purge gas are arranged on the chamber body 1, and the purge air holes 17 are connected from the top of the chamber body 1 to the lower hole wall of the transmission valve port 16. The purge bushing 4 is inserted into the film transfer valve port 16, and a purge flow channel is provided on the purge bushing 4, one end of the purge flow channel is connected to the purge air hole 17, and the other end of the purge flow channel is connected to the interior of the chamber, so that the purge gas can be guided to the interior of the chamber and discharged through the chamber. It should be noted that there are many structures for the purge flow, and no matter what structure it is, as long as it can connect the purge air hole 17 and the interior of the chamber and guide the airflow to the interior of the chamber, it is not limited here. The purge flow channel is used to achieve the purge of the dead zone of the film transfer valve port 16, reduce particle size pollution, and improve the quality of thin film deposition.

[0051] Reference Figure 6 , Figure 7 and Figure 8In a specific implementation, the purge bushing 4 is provided with a through air inlet 41 along the radial direction of the cavity 1, and the purge air passage includes an annular air passage 42 and a plurality of air inlet holes 43. The annular air passage 42 is opened in the circumferential direction around the air inlet 41, the purge air hole 17 is connected with the annular air passage 42, and a plurality of air inlet holes 43 are provided on the annular air passage 42 to connect the annular air passage 42 with the air inlet 41. Specifically, the purge bushing 4 is a crescent-shaped bushing structure with a flat mouth as a whole, and the inner side of the bushing is the air inlet 41, and the air inlet 41 connects the outside with the inside of the chamber. The purge airway includes an annular airway 42 and a plurality of air inlet holes 43. The annular airway 42 is a circle of annular grooves formed by the circumferential depression of the air inlet 41. The annular groove faces the inner wall of the transmission valve port 16. The outlet of the purge air hole 17 faces the lower side of the annular airway 42. A plurality of air inlet holes 43 are arranged at intervals along the upper side of the annular airway 42. The air inlet holes 43 are small hole structures distributed on the upper side of the annular airway 42 to form an air curtain structure. The air inlet holes 43 connect the annular groove and the air inlet 41 below. In this way, the purge gas first flows upward from the purge air holes 17 at the bottom of the cavity 1 into the lower side of the annular airway 42, and the purge gas flows around the annular airway 42, flows from the lower side of the annular airway 42 to the upper side of the annular airway 42, takes away the particles at the transmission valve port 16, and flows downward from the upper side of the annular airway 42 through the air inlet holes 43 to flow to the air inlet 41, and finally flows radially from the air inlet 41 into the interior of the chamber. The purge gas is guided by the purge airway structure of this embodiment, and has a simple structure and low processing cost.

[0052] Reference Figure 1 and Figure 6 In a specific implementation, a limiting groove 44 is provided on the purge bushing 4, and a limiting boss 18 is provided on the transmission valve port 16. The purge bushing 4 is fixed to the transmission valve port 16 through the limiting groove 44 and the limiting boss 18. Specifically, a limiting groove 44 is provided on the upper surface of the purge bushing 4, and a limiting boss 18 is formed on the upper side of the inner wall of the transmission valve port 16. The purge bushing 4 is inserted into the transmission valve port 16 until the limiting boss 18 is engaged with the limiting groove, thereby assembling and fixing the purge bushing 4 to the cavity 1, which has a simple structure and is easy to assemble.

[0053] Reference Fig. 9 and Fig.10In one embodiment, the reaction chamber further comprises two chamber liners 5, on which a through hole 51 of a liner heating plate and a valve port 52 of a liner are provided. The two chamber liners 5 are detachably arranged in the first chamber 11 and the second chamber 12, respectively. The through hole 51 of the liner heating plate is opposite to the through hole 21 of the heating plate, and the valve port 52 of the liner is opposite to the valve port 16 of the liner. Specifically, in order to reduce the specification of the chamber 1, the inner diameters of the two chambers can be designed according to the required large size. When the chamber 1 required for some processes is small, the inner diameter of the chamber can be reduced by adding a liner of the chamber 1 in the chamber. The material of the liner in the chamber can be ceramic or aluminum. Among them, the chamber liner 5 is also provided with a through hole 51 of a liner heating plate and a valve port 52 of a liner transmission. The size of the through hole 51 of the liner heating plate is the same as the size of the through hole 21 of the heating plate on the bottom plate, and the size of the valve port 52 of the liner transmission is the same as the size of the valve port 16 of the chamber 1. By processing chamber liners 5 of different thicknesses, when there is a process requirement for the specification of a small chamber 1, a chamber liners 5 of corresponding thickness are selected and placed inside the chamber, thereby reducing the inner diameter of the chamber and adapting to the process requirements of the small-sized chamber. When the chamber liners 5 are placed in the chamber, the liners valve port 52 should be aligned with the valve port 16 on the chamber 1, and the liners heating plate through hole 51 should be aligned with the heating plate through hole 21 on the bottom plate 2. The chamber liners 5 can reduce the specifications of the chamber 1, and there is no need to design chambers 1 of various specifications, thereby reducing the cost of replacement parts.

[0054] Reference Fig.10 In this embodiment, an annular positioning step 19 is provided on the inner wall of the first chamber 11 and the second chamber 12, and a positioning boss 53 is protruding from the bottom of the chamber liner 5, and the positioning boss 53 is placed in the annular positioning step 19. Specifically, the inner wall of the chamber protrudes toward the center to form an annular positioning step 19. The bottom of the chamber 1 liner protrudes downward to form a positioning boss 53 with a disc structure, and the diameter of the positioning boss 53 is smaller than the diameter of the chamber 1 liner. The chamber 1 liner is placed inside the chamber, and the disc positioning boss 53 is placed at the center of the annular positioning step 19 to complete the positioning of the chamber liner 5 inside the chamber. A second sealing ring 54 is provided on the contact interface between the positioning boss 53 and the annular positioning step 19 to seal the chamber and improve the sealing performance. The chamber liner 5 is pressed downward by the bottom plate 2 and the parts in the chamber to achieve vertical fixation. Through the positioning structure of this embodiment, the chamber liner 5 can be easily assembled, with a simple structure and convenient processing.

[0055] The embodiment of the present invention further provides a thin film deposition device, including the reaction chamber of the above embodiment. Specifically, the reaction chamber of this embodiment has been described in detail in the above embodiment, and for the sake of brevity of the description, it will not be repeated here.

[0056] Through this embodiment, the problems of single process, repeated design and high replacement cost of the integrated reaction chamber are solved. It can be freely combined according to process requirements, which can not only meet diverse process requirements, but also reduce the specifications of the reaction chamber and reduce the replacement cost, thereby providing a flexible design configuration for the experimental machine.

[0057] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A reaction chamber, characterized in that: include: A cavity and two bottom plates, wherein a first cavity and a second cavity are provided in the cavity, the first cavity and the second cavity are arranged adjacent to each other and penetrate the cavity from top to bottom, and a heating plate through hole is provided on the bottom plate; The two bottom plates are detachably sealed at the bottom of the first chamber and the second chamber.

2. The reaction chamber according to claim 1, characterized in that: The cavity is provided with two side air suction ports which penetrate the cavity from top to bottom, and the two side air suction ports are adjacently arranged between the first chamber and the second chamber.

3. The reaction chamber according to claim 2, characterized in that: Also included is a sealing member, which is detachably sealed to the two side air suction ports.

4. The reaction chamber according to claim 3, characterized in that: An isolation portion is provided between the top of the first chamber and the top of the second chamber, and the isolation portion extends from an inner wall on one side of the cavity toward an inner wall on the other side opposite to the cavity without being connected to form a gap, and the sealing member is detachably spliced ​​at the gap to isolate the first chamber and the second chamber.

5. The reaction chamber according to claim 4, characterized in that: The sealing member is a triangular block, the wide end of which is in contact with the inner wall of the cavity, the wide end of which blocks the two side air suction ports, and the narrow end of which is in contact with the isolation portion.

6. The reaction chamber according to claim 1, characterized in that: The bottom plate is provided with a bottom air suction port.

7. The reaction chamber according to any one of claims 1 to 6, characterized in that: The first chamber and the second chamber are both provided with a film transmission valve port, and the two film transmission valve ports are radially penetrated from the side wall of the cavity to the first chamber and the second chamber respectively.

8. The reaction chamber according to claim 7, characterized in that: It also includes two purge bushings, each of which is provided with a purge air duct. The two purge bushings are detachably arranged on the two flap valve ports, respectively. Two purge air holes are opened on the cavity, and the two purge air holes are respectively connected from the bottom of the cavity to the two flap valve ports; wherein the purge air duct is connected with the purge air holes to guide the purge gas to the first chamber and the second chamber.

9. The reaction chamber according to claim 8, characterized in that: The purge bushing is provided with a through air inlet along the radial direction of the cavity, the purge air passage includes an annular air passage and a plurality of air inlet holes, the annular air passage is opened around the circumference of the air inlet, the purge air holes are connected with the annular air passage, and a plurality of the air inlet holes are provided on the annular air passage to connect the annular air passage with the air inlet.

10. The reaction chamber according to claim 8, characterized in that: The purge bushing is provided with a limiting groove, the flap valve port is provided with a limiting boss, and the purge bushing is fixedly arranged at the flap valve port through the cooperation of the limiting groove and the limiting boss.

11. The reaction chamber according to any one of claims 1 to 6, characterized in that: It also includes two chamber liners, on which a through hole for a liner heating plate and / or a liner transmission valve port are opened, and the two chamber liners are detachably arranged in the first chamber and the second chamber, respectively.

12. The reaction chamber according to claim 11, characterized in that: An annular positioning step is provided on the inner wall of the first chamber and the second chamber, and a positioning boss is protruding from the bottom of the chamber liner, and the positioning boss is placed in the annular positioning step.

13. A thin film deposition device, characterized in that: Comprising a reaction chamber as described in any one of claims 1-12.