High-frequency detection array plane based on near-infrared photosensitive core-shell nanowires and preparation method of high-frequency detection array plane

Abstract

The invention discloses a high-frequency detection array plane based on near-infrared photosensitive core-shell nanowires and a preparation method of the high-frequency detection array plane, and belongs to the technical field of phototransistors. The detection array plane comprises a grid electrode, the upper end of the grid electrode is covered with an insulating layer, a source electrode and a drain electrode are arranged on the two sides of the upper end of the insulating layer respectively, and a core-shell nanowire PIN structure is further arranged at the upper end of the insulating layer and located between the source electrode and the drain electrode; the core-shell nanowire PIN structure comprises an inner layer ZnO nanowire arranged at the upper end of the insulating layer and used as an N-type layer; an intermediate layer PbSe two-dimensional nano fragment is arranged on the upper surface of the inner layer ZnO nanowire and is used as an intrinsic layer; the upper surface of the middle layer PbSe two-dimensional nanometer fragment is covered with an outer layer NiO thin film which is used as a P-type layer. The PIN structure is beneficial to formation of effective carrier separation and transmission at an interface, so that the photoelectric conversion efficiency of the device is improved; niO and ZnO are stable semiconductor materials and have good chemical stability and thermal stability.

Description

Technical Field

[0001] The invention belongs to the technical field of phototransistors, and in particular relates to a high-frequency detection array based on near-infrared photosensitivity core-shell nanowires and a preparation method thereof. Background Art

[0002] Spectral detection has been widely used in a series of application scenarios such as characteristic gases, solution components, textile components, etc. At present, spectral detection is limited by the lack of photoelectric detectors with strong photoelectric conversion capabilities and fast high-frequency response speed; especially in the detection of drug liquid components, the common covalent bond absorption peak of the drug liquid is easily interfered by the strong absorption of the aqueous solution in the near-infrared, and it is impossible to give an effective signal.

[0003] At present, traditional photodetectors have encountered bottlenecks in multiple key performance indicators, mainly due to the limited range of material selection and inherent limitations in structural design. This not only leads to low photoelectric conversion efficiency, resulting in a large amount of incident light energy failing to be effectively converted into electrical energy, but is also accompanied by a slow response speed, making it impossible to capture rapidly changing light signals in a timely manner. At the same time, the lack of stability of the equipment also limits its long-term reliable application in complex and changing environments. Especially in the cutting-edge field of photoelectric liquid detection, facing high-frequency harmonic laser signals under low light intensity conditions, traditional detectors are unable to separate and transmit photogenerated carriers, which seriously affects the improvement of photoelectric conversion efficiency. Therefore, exploring new materials and optimizing structural design to achieve more efficient photoelectric conversion, faster response speed and stronger stability have become key issues that need to be urgently solved in this field, and are also an important scientific research direction for new photodetectors. Summary of the invention

[0004] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a high-frequency detection array based on near-infrared photosensitivity core-shell nanowires and a preparation method thereof, thereby solving the problems in the prior art.

[0005] The purpose of the present invention can be achieved by the following technical solutions:

[0006] A high-frequency detection array based on near-infrared photosensitive core-shell nanowires includes a gate, an insulating layer covers the upper end of the gate, a source electrode and a drain electrode are arranged on both sides of the upper end of the insulating layer, and a core-shell nanowire PIN structure is also arranged on the upper end of the insulating layer and is located between the source electrode and the drain electrode;

[0007] The core-shell nanowire PIN structure includes an inner ZnO nanowire arranged on the upper end of the insulating layer, serving as an N-type layer; an intermediate PbSe two-dimensional nanofragment is arranged on the upper surface of the inner ZnO nanowire, serving as an intrinsic layer; and an outer NiO film is covered on the upper surface of the intermediate PbSe two-dimensional nanofragment, serving as a P-type layer.

[0008] Furthermore, the gate is prepared by electrohydrodynamic inkjet printing on the surface of the silicon substrate using conductive silver ink.

[0009] Furthermore, the insulating layer is prepared by spin coating two layers of SiO2 using a coating machine.

[0010] Furthermore, the source electrode and the drain electrode are both prepared by microfluidic printing, and the material of the source electrode and the drain electrode are both silver.

[0011] Furthermore, the inner layer ZnO nanowires are prepared by plasma enhanced chemical vapor deposition;

[0012] The intermediate layer of PbSe two-dimensional nano-fragments is prepared by spin coating three layers of PbSe two-dimensional nano-fragments solution using a spin coater;

[0013] The outer NiO film is prepared by magnetron sputtering.

[0014] Furthermore, the gate is in the form of a voltage-adjustable gate.

[0015] Further, the following steps are included:

[0016] S1, clean the silicon substrate with acetone, ethanol and deionized water in sequence, and blow dry;

[0017] S2, using conductive silver ink to prepare the gate on the surface of the silicon substrate by electrohydrodynamic inkjet printing method;

[0018] S3, spin coating SiO2 on the surface of the gate, spin coating two layers to obtain the insulating layer;

[0019] S4, placing an insulating layer on top of a quartz boat containing zinc powder, and preparing the inner layer ZnO nanowires by plasma enhanced chemical vapor deposition;

[0020] S5, spin coating the PbSe two-dimensional nanofragment solution on the surface of the ZnO nanowires, spin coating three layers to obtain the intermediate layer of PbSe two-dimensional nanofragment;

[0021] S6, preparing the outer layer NiO film on the surface of the intermediate layer PbSe two-dimensional nanofragments by magnetron sputtering;

[0022] S7, preparing the source electrode and the drain electrode on both sides of the insulating layer by a microfluidic printing method to obtain a sample;

[0023] S8, annealing the sample.

[0024] Furthermore, the preparation process of the PbSe two-dimensional nanofragment solution is as follows:

[0025] The PbSe substrate film is prepared by magnetron sputtering to construct the two-dimensional nano precursor, the substrate is placed in a NaOH solution to remove the crystalline material, and then dried in a CVD reactor, and the substrate is cleaned and collected to obtain the two-dimensional nano fragments of PbSe;

[0026] The PbSe two-dimensional nanofragments are dispersed in dimethylformamide and ultrasonically vibrated to form a PbSe two-dimensional nanofragments solution.

[0027] The above-mentioned high-frequency detection array based on near-infrared photosensitivity core-shell nanowires is applied in drug concentration detection.

[0028] A drug concentration detection device comprises the above-mentioned high-frequency detection array based on near-infrared photosensitivity core-shell nanowires.

[0029] Beneficial effects of the present invention:

[0030] 1. The present invention adopts plasma enhanced chemical vapor deposition technology to prepare ZnO nanowires. ZnO has the advantages of high electron affinity, large exciton binding energy, high electron mobility, good chemical stability and thermal stability, excellent piezoelectricity, photoelectricity, gas sensitivity and humidity sensitivity.

[0031] 2. The present invention uses a coating machine to spin-coat a PbSe two-dimensional nanofragment solution on the surface of ZnO nanowires to prepare the intermediate layer of PbSe two-dimensional nanofragment. PbSe is a narrow bandgap semiconductor material with excellent infrared photosensitivity. Combining it with ZnO can broaden the spectral response range of ZnO, enabling it to respond to near-infrared light; the introduction of PbSe two-dimensional nanofragment can enhance the mechanical strength and stability of the device, making it more suitable for practical applications.

[0032] 3. The present invention utilizes magnetron sputtering technology to obtain a uniformly distributed NiO film on the surface of the intermediate layer PbSe two-dimensional nano-fragments. NiO, as a P-type semiconductor, forms a PIN structure with N-type ZnO, which helps to form effective carrier separation and transmission at the interface, thereby improving the photoelectric conversion efficiency of the device. NiO and ZnO are both stable semiconductor materials with good chemical stability and thermal stability. Using them in combination can further enhance the stability and durability of the device.

[0033] 4. The present invention adopts a voltage-adjustable electric grid form, and adopts a gate voltage application method to form an electric field on the semiconductor surface, attract or repel carriers, form a conductive channel, and accelerate the separation process of photogenerated electrons and holes generated by light irradiating the semiconductor material. By adjusting the gate voltage, the carrier concentration in the channel can be regulated, thereby changing the channel resistance and carrier mobility, and at the same time controlling the separation speed of photogenerated carriers and changing the photoelectric conversion efficiency.

[0034] 5. The present invention adopts a PIN core-shell nanowire structure. The built-in electric field in the PIN structure helps to separate and transmit carriers, reduce carrier recombination losses, and thus improve the photoelectric performance of the device; the core-shell nanowire structure can provide a larger specific surface area, increase light absorption efficiency, and reduce scattering and recombination, thereby improving carrier transmission efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 A structural cross-sectional view of the detection array of the present invention;

[0037] Figure 2 It is a schematic diagram of the side structure of the source terminal of the present invention;

[0038] Figure 3 It is a schematic diagram of the side structure of the drain terminal of the present invention;

[0039] Figure 4 It is a schematic diagram of the three-dimensional structure of the detection array of the present invention;

[0040] Figure 5 This is a SEM image of the high-frequency detection array based on near-infrared photosensitive core-shell nanowires of the present invention;

[0041] Figure 6 is the transfer characteristic curve of the present invention at VDS=5V;

[0042] Figure 7 The output characteristic curve of the present invention at different light intensities at a wavelength of 980nm;

[0043] Figure 8 This is the overall flow chart of the drug solution concentration detection of the present invention;

[0044] Fig. 9 It is a schematic diagram of the network model structure;

[0045] Fig.10 It is a single-cycle output simulation curve of ambroxol hydrochloride with different concentrations at 100kHz in the 980nm band of the present invention;

[0046] Fig.11 The linear fitting of the concentration prediction of ambroxol hydrochloride at a frequency of 100kHz in the 980nm band of the present invention is provided.

[0047] In the figure: 1-gate, 2-insulating layer, 3-source, 4-drain, 5-inner layer ZnO nanowire, 6-middle layer PbSe two-dimensional nanofragments, 7-outer layer NiO film. DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0049] Example 1

[0050] like Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, a high-frequency detection array based on near-infrared photosensitive core-shell nanowires includes a gate 1, the upper end of the gate 1 is covered with an insulating layer 2, the upper ends of the insulating layer 2 are provided with a source 3 and a drain 4 respectively, and the upper end of the insulating layer 2 is also provided with a core-shell nanowire PIN structure, and the core-shell nanowire PIN structure is located between the source 3 and the drain 4;

[0051] The core-shell nanowire PIN structure includes an inner ZnO nanowire 5 arranged on the upper end of the insulating layer 2, which serves as an N-type layer; an intermediate PbSe two-dimensional nanofragment 6 is arranged on the upper surface of the inner ZnO nanowire 5, which serves as an intrinsic layer; and an outer NiO film 7 is covered on the upper surface of the intermediate PbSe two-dimensional nanofragment 6, which serves as a P-type layer.

[0052] The gate electrode 1 is prepared by electrofluidic inkjet printing on the surface of the silicon substrate using conductive silver ink; the insulating layer 2 is prepared by spin coating two layers of SiO2 using a coating machine; the source electrode 3 and the drain electrode 4 are prepared by microfluidic printing technology, and both the source electrode 3 and the drain electrode 4 are metallic silver; Figure 5 As shown, the inner layer ZnO nanowire 5 is prepared by plasma enhanced chemical vapor deposition technology, with a diameter of 200nm and a length of 10μm; the middle layer PbSe two-dimensional nanofragment 6 is prepared by spin coating three layers of PbSe two-dimensional nanofragment solution using a coater, with a thickness of 60nm, which is used to broaden the spectral response range of ZnO so that it can respond to near-infrared light; the outer layer NiO film 7 is prepared by magnetron sputtering technology, with a thickness of 80nm.

[0053] In this embodiment, the gate 1 is in the form of a voltage-adjustable electric gate. By applying a voltage to the gate 1, an electric field is formed on the surface of the semiconductor, which attracts or repels carriers, forms a conductive channel, and accelerates the separation process of photogenerated electrons and holes generated by light irradiating the semiconductor material. By adjusting the voltage of the gate 1, the carrier concentration in the channel can be regulated, thereby changing the channel resistance and carrier mobility, and at the same time controlling the separation speed of photogenerated carriers to change the photoelectric conversion efficiency.

[0054] Example 2

[0055] In this embodiment, a method for preparing a high-frequency detection array based on near-infrared photosensitive core-shell nanowires is proposed, comprising the following steps:

[0056] S1, cleaning the silicon substrate, first with acetone for 15 minutes, then with ethanol for 15 minutes, then with deionized water to clean the ethanol residue on the surface of the substrate, and finally blow dry in a nitrogen gas environment for 10 minutes.

[0057] S2, printing conductive silver ink on the surface of the silicon substrate by an electrohydrodynamic inkjet printing method to obtain a gate 1;

[0058] In the process of printing the gate 1 by the electrohydrodynamic inkjet printing method, a square wave mode is adopted, the amplitude voltage is 1100V, the bias voltage is 900V, the frequency is 200Hz, and the duty cycle is 15.

[0059] S3, using a coating machine to spin-coat SiO2 on the surface of the gate 1, and spin-coating two layers to obtain an insulating layer 2;

[0060] The first stage of spin coating of each layer was performed at a speed of 1000 rpm for 15 s, and the second stage was performed at a speed of 2000 rpm for 45 s.

[0061] S4, placing the insulating layer 2 on top of a quartz boat containing 0.2 g of zinc powder, then placing the quartz boat in a chamber, and preparing inner ZnO nanowires 5 on the insulating layer 2 by plasma enhanced chemical vapor deposition;

[0062] The chamber temperature is 800°C and the chamber pressure is 7.5×10 -3 torr, the gas flow rate was 20 sccm (Ar:O2 in the gas=3:1), and the prepared inner layer ZnO nanowire 5 had a diameter of 200 nm and a length of 10 μm.

[0063] S5, by magnetron sputtering, using 60W power, argon gas flow rate of 20sccm, internal pressure of 0.05Pa, magnetron sputtering for 45 seconds, on a quartz substrate, sputtering two elements of Pb and Se simultaneously, preparing a PbSe substrate film to construct a two-dimensional nano precursor;

[0064] Then, the substrate is placed in a NaOH solution to remove the crystalline material, and then placed in a CVD reactor and dried at 800 degrees Celsius for 4 hours. The substrate is cleaned and collected to obtain PbSe two-dimensional nanofragments.

[0065] Finally, the PbSe two-dimensional nanofragments are dispersed in dimethylformamide (DMF) and ultrasonically vibrated for 15 minutes to form a PbSe two-dimensional nanofragment solution.

[0066] S6, using a coating machine to spin-coat the PbSe two-dimensional nanofragment solution on the surface of the ZnO nanowire 5, spin-coating 3 layers to obtain an intermediate layer of PbSe two-dimensional nanofragment 6;

[0067] The first stage of spin coating of each layer was at a speed of 1000 rpm for 15 s, the second stage was at a speed of 2000 rpm for 45 s, and annealing was performed for 30 min to obtain a uniformly precipitated intermediate layer of PbSe two-dimensional nanofragments 6 with a thickness of 60 nm.

[0068] S7, using magnetron sputtering method, 80 W power, time 800 s, using NiO ceramic target, preparing uniformly distributed outer NiO film 7 on the surface of the middle layer PbSe two-dimensional nano-fragments 6, with a thickness of 80 nm;

[0069] S8, using microfluidic printing, using conductive silver ink, drying at 150 °C for 30 minutes, laser annealing process, 560nm laser using 262mJ / cm 2 , annealing for 5 minutes, preparing a source electrode 3 at the left end of the generated core-shell nanowire PIN structure and the surface of the insulating layer 2, and preparing a drain electrode 4 at the right end and the surface of the insulating layer 2, to obtain a sample device.

[0070] S9, annealing the sample device at 150°C for 30 minutes to obtain a high-frequency detection array based on near-infrared photosensitivity core-shell nanowires.

[0071] like Figure 6 As shown, the transfer characteristic curves of the light-generated current between the drain and the source are observed under no light, 850nm, 980nm, 1270nm, and 1380nm wavelength incident light. With the incidence of near-infrared light, the source-drain current is affected by the photogenerated current gain. Among them, in the turn-off part where the gate voltage is negative, a great gain effect of the photogenerated current is shown, which corresponds to the near-infrared photoelectric conversion characteristics of the selected material, and realizes the effect of optical switching. This difference can effectively improve the sensitivity of the optical signal and reduce the difficulty of designing the subsequent optical sensing circuit.

[0072] like Figure 7 As shown in the figure, the output characteristics of the transistor vary with the energy gain of the incident light. The incident light has a wavelength of 980nm and the optical powers are no light, 2μW / cm 2, 7μW / cm 2 , 12μW / cm 2 , 22μW / cm 2 The stronger the incident light energy is, the more incident photons there are, and the stronger the photocurrent is under the photoelectric conversion effect. In addition, affected by the external quantum efficiency of the material, in the case of weak near-infrared light signals, a relatively excellent photocurrent gain effect can be exhibited, overcoming the strong absorption of near-infrared by aqueous solutions.

[0073] Example 3

[0074] In this embodiment, the high-frequency detection array based on near-infrared photosensitivity core-shell nanowires in Example 1 can be used to achieve high-precision detection of medical drug concentrations within the near-infrared spectrum, thereby overcoming the portability problem of existing high-precision concentration detection of medical drugs and avoiding the problem of damaging the drug components being detected.

[0075] like Figure 8 As shown, the detection steps are:

[0076] Step 1: The PC sends parameters such as current range, output mode, and signal frequency through the serial port. The transmitting module generates a sine wave with frequency f1, a sine carrier signal with frequency f1, and a sawtooth wave with frequency f0, and mixes the sine wave with the sawtooth wave to form a high-frequency modulated carrier to drive the LD laser to generate an adjustable laser. The adjustable laser is decomposed by a spectrometer to obtain two laser beams with the same frequency, wavelength, and intensity, which pass through the sample group and the control group with the same solvent but no solute respectively.

[0077] Step 2: The laser light penetrating the sample group and the control group is irradiated on the phototransistor of the present invention respectively, and the light signal is converted into a current signal and output;

[0078] Step 3: The receiving module converts the current signal into a voltage signal, and obtains the harmonic analog signal through differential, 2f1 phase-locked amplification, filtering and other operations. Further, the signal is converted into a digital signal and sent to the PC. After reverse processing by the host computer, the final output analog signal is obtained and the exported data set is displayed;

[0079] Step 4: Use a one-dimensional convolutional neural network to design a calibration model to process the data set. The data set contains 250 data points in total. A 7-layer network is used to build the model, including input layer, convolution layer, maximum pooling layer, fully connected layer and output layer, and finally map the drug concentration.

[0080] The structure of the host computer data processing and network model is as follows Fig. 9As shown, every 32 bits of the digital signal constitute an analog signal as a data element. Further, a single-cycle analog signal with a fixed 250 data points is extracted and used as the input to enter the network model. Two convolution layers constructed with 16 3×1 and 64 3×1 convolution kernels are used to extract band features. Further, a 3×1 max-pooling is used to obtain the local maximum of the data. Further, a convolution layer constructed with two layers of 64 3×1 convolution kernels is used to obtain the high-dimensional features of the spectral data. Further, the extracted high-dimensional data is expanded in the tiled layer, and finally the output nodes are connected to map the concentration.

[0081] The present invention adopts a harmonic laser signal with a wavelength of 980nm and a frequency of 100kHz, and the sample concentrations are 7.5mg / 100ml, 10mg / 100ml, 12.5mg / 100ml, 20mg / 100ml, 27.5mg / 100ml, and 30mg / 100ml of ambroxol hydrochloride, and the results obtained are as follows Fig.10 As shown, by directly observing the waveform, it is found that the trough of the output simulation curve of the same drug with different concentrations at the same frequency generally shows a downward trend as the concentration increases.

[0082] The data obtained from multiple tests of different drug concentrations were Fig. 9 The concentration prediction value obtained from the network model structure is taken as the ordinate, and the corresponding true concentration is taken as the abscissa to form a concentration prediction linear fit, as shown in Fig.11 As shown in the figure, the concentration prediction fitting degree of ambroxol hydrochloride is 0.973, which can ensure the accuracy of the data.

[0083] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0084] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A high-frequency detection array based on near-infrared photosensitive core-shell nanowires, characterized in that: It includes a gate, the upper end of the gate is covered with an insulating layer, the upper end of the insulating layer is provided with a source electrode and a drain electrode on both sides thereof, and the upper end of the insulating layer is also provided with a core-shell nanowire PIN structure, and is located between the source electrode and the drain electrode; The core-shell nanowire PIN structure comprises an inner ZnO nanowire disposed on the upper end of the insulating layer as an N-type layer; an intermediate PbSe two-dimensional nanofragment is disposed on the surface of the inner ZnO nanowire as an intrinsic layer; The upper surface of the middle layer PbSe 2D nanofragments is covered with an outer layer NiO film as a P-type layer.

2. The high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to claim 1, characterized in that: The grid is prepared by electrohydrodynamic inkjet printing on the surface of a silicon substrate using conductive silver ink.

3. The high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to claim 1, characterized in that: The insulating layer is prepared by spin coating two layers of SiO2 using a coating machine.

4. The high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to claim 1, characterized in that: The source electrode and the drain electrode are both prepared by microfluidic printing method, and the materials of the source electrode and the drain electrode are both silver.

5. The high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to claim 1, characterized in that: The inner layer ZnO nanowires are prepared by plasma enhanced chemical vapor deposition; The intermediate layer of PbSe two-dimensional nano-fragments is prepared by spin coating three layers of PbSe two-dimensional nano-fragments solution using a spin coater; The outer NiO film is prepared by magnetron sputtering.

6. The high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to claim 1, characterized in that: The gate is in the form of a voltage-adjustable electric gate.

7. The method for preparing a high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1, clean the silicon substrate with acetone, ethanol and deionized water in sequence, and blow dry; S2, using conductive silver ink to prepare the gate on the surface of the silicon substrate by electrohydrodynamic inkjet printing method; S3, spin coating SiO2 on the surface of the gate, spin coating two layers to obtain the insulating layer; S4, placing an insulating layer on top of a quartz boat containing zinc powder, and preparing the inner layer ZnO nanowires by plasma enhanced chemical vapor deposition; S5, spin coating the PbSe two-dimensional nanofragment solution on the surface of the ZnO nanowires, spin coating three layers to obtain the intermediate layer of PbSe two-dimensional nanofragment; S6, preparing the outer layer NiO film on the surface of the intermediate layer PbSe two-dimensional nano-fragments by magnetron sputtering; S7, preparing the source electrode and the drain electrode on both sides of the insulating layer by a microfluidic printing method to obtain a sample; S8, annealing the sample.

8. The method for preparing a high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to claim 7, characterized in that: The preparation process of the PbSe two-dimensional nanofragment solution is as follows: The PbSe substrate film is prepared by magnetron sputtering to construct the two-dimensional nano precursor, the substrate is placed in a NaOH solution to remove the crystalline material, and then dried in a CVD reactor, and the substrate is cleaned and collected to obtain the two-dimensional nano fragments of PbSe; The PbSe two-dimensional nanofragments are dispersed in dimethylformamide and ultrasonically vibrated to form a PbSe two-dimensional nanofragments solution.

9. Application of the high-frequency detection array based on near-infrared photosensitive core-shell nanowires according to any one of claims 1 to 6 in drug concentration detection.

10. A drug concentration detection device, characterized in that: A high-frequency detection array based on near-infrared photosensitivity core-shell nanowires comprising any one of claims 1-6.

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