Transparent solar cell and preparation method thereof

Abstract

The invention relates to a transparent solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The solar cell comprises a first electrode layer, an absorption layer and a second electrode layer, the first electrode layer, the absorption layer and the second electrode layer are sequentially stacked, the material of the first electrode layer comprises transparent conductive oxide, the absorption layer comprises a silicon-based semiconductor layer, the solar cell is provided with micropores, and the micropores are communicated with the absorption layer. The micropores extend from the surface, far away from the first electrode layer, of the second electrode layer to the first electrode layer and penetrate through the second electrode layer and the absorption layer; the transparent conductive oxide is used as the first electrode layer, and the micropores penetrating through the second electrode layer and the absorption layer are formed in the solar cell, so that the solar cell has a transparent effect. And the first electrode layer without holes can provide certain mechanical strength for the whole solar cell, so that the solar cell can have relatively good mechanical strength.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a transparent solar cell and a preparation method thereof. Background Art

[0002] Most of the existing solar cells are silicon-based solar cells. This type of solar cell includes an absorption layer suitable for absorbing light and converting it into electrical energy, usually made of semiconductor materials such as silicon, a first electrode made of a transparent material and a second electrode made of an opaque metal material. The first electrode extends to a transparent substrate, usually glass, to form a support for the solar cell. In order to improve the photoelectric conversion efficiency, the first electrode will be roughened to produce a certain scattering factor, also known as the "haze factor".

[0003] However, existing solar cells are not transparent to light. In some fields, especially in the fields of architecture, portable electronics and watchmaking devices, there has been a demand for transparent solar cells, and roughening is unacceptable for certain applications of transparent solar cells, especially watchmaking applications, because this scattering factor will produce blurring of the solar cells, making it difficult to read the time and perceive the details of the dial. Summary of the invention

[0004] The present application provides a transparent solar cell and a method for preparing the same, so as to overcome the current technical prejudice that solar cells cannot achieve transparency.

[0005] In a first aspect, the present application provides a transparent solar cell, which comprises: a first electrode layer, an absorption layer, and a second electrode layer, which are stacked in sequence, wherein the material of the first electrode layer comprises a transparent conductive oxide, and the absorption layer comprises a silicon-based semiconductor layer. The solar cell is provided with micropores, which extend from a surface of the second electrode layer away from the first electrode layer to the first electrode layer, and penetrate the second electrode layer and the absorption layer.

[0006] As an optional implementation, the second electrode layer comprises a second electrode body layer and a second suede layer attached to the second electrode body layer, and the thickness of the second suede layer is 1 μm to 5 μm; and / or

[0007] The first electrode layer comprises a first electrode body layer and a first suede layer attached to the first electrode body layer, the first suede layer has a thickness of 1 μm to 5 μm, and the first suede layer is only distributed in a contact area between the first electrode layer and the absorption layer; and / or

[0008] The material of the second electrode layer includes an opaque conductive material.

[0009] As an optional implementation, the opaque conductive material includes at least one of copper, aluminum and alloys thereof.

[0010] As an optional embodiment, the transparent conductive oxide includes at least one of zinc oxide, tin oxide and indium tin oxide.

[0011] As an optional implementation, the solar cell further includes a protective layer, and the material of the protective layer is a transparent material; the protective layer includes a protective layer body, and the protective layer body is arranged on a side of the second electrode layer away from the absorption layer.

[0012] As an optional implementation, the protective layer includes a microporous filling block, which is disposed on a side of the protective layer body close to the second electrode layer, and the microporous filling block is disposed in the micropores.

[0013] As an optional implementation, the refractive index of the material of the protective layer is 1-2; and / or

[0014] The material of the protective layer includes at least one of polyparaxylene, polyimide, siloxane, nitride and oxide.

[0015] As an optional embodiment, the micropores are distributed in an array; and / or

[0016] In the micropores distributed in an array, the distance s between two adjacent micropores is 50 μm to 200 μm; and / or

[0017] The pore size d of the micropores is 50 μm to 200 μm; and / or

[0018] The thickness of the first electrode body layer is 0.5 μm to 5 μm; and / or

[0019] The thickness of the absorption layer is 100 μm to 300 μm; and / or

[0020] The thickness of the second electrode body layer is 0.1 μm to 1 μm; and / or

[0021] The silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer.

[0022] In a second aspect, the present application provides a method for preparing a transparent solar cell, the method comprising:

[0023] A first electrode layer, an absorption layer and a second electrode layer are stacked to obtain a primary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the absorption layer includes a silicon-based semiconductor layer;

[0024] The primary product is subjected to a pore-forming treatment to form micropores to obtain a solar cell, wherein the micropores extend from a surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer.

[0025] As an optional implementation, the hole opening process includes a chemical etching hole opening process.

[0026] The above technical solution provided by the embodiment of the present application has the following advantages compared with the prior art:

[0027] The solar cell provided in the embodiment of the present application adopts a transparent conductive oxide as the first electrode layer, and provides micropores penetrating the second electrode layer and the absorption layer in the solar cell, so that the solar cell has a transparent effect. The first electrode layer without holes can provide a certain mechanical strength for the entire solar cell, so that the solar cell can also have good mechanical strength. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0030] Figure 1 A schematic diagram of the structure of a solar cell provided in an embodiment of the present application;

[0031] Figure 2 A schematic diagram of micropore distribution provided in an embodiment of the present application;

[0032] Figure 3 A flowchart of the method provided in the embodiment of the present application.

[0033] Reference numerals: 11 - first electrode layer; 12 - n-type doped silicon-based semiconductor layer; 13 - p-type doped silicon-based semiconductor layer; 14 - second electrode layer; 15 - protective layer; 16 - micropores. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0035] Unless otherwise specified, various raw materials, reagents, instruments and equipment used in this application can be purchased from the market or prepared by existing methods.

[0036] Figure 1 A schematic diagram of the structure of a solar cell provided in an embodiment of the present application is shown in FIG. Figure 1 As shown, an embodiment of the present application provides a transparent solar cell, the solar cell comprising: a first electrode layer, an absorption layer and a second electrode layer, the first electrode layer, the absorption layer and the second electrode layer are stacked in sequence, the material of the first electrode layer comprises a transparent conductive oxide, the absorption layer comprises a silicon-based semiconductor layer, the solar cell is provided with micropores, the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer, and penetrate the second electrode layer and the absorption layer.

[0037] The solar cell adopts transparent conductive oxide as the first electrode layer, and opens micropores through the second electrode layer and the absorption layer in the solar cell, so that the solar cell has a transparent effect. The first electrode layer without holes can provide a certain mechanical strength for the entire solar cell, so that the solar cell can also have good mechanical strength.

[0038] It can be understood that the first electrode layer composed of transparent conductive oxide has good surface smoothness and can have good light transmittance, which is beneficial to the transparency effect of the solar cell.

[0039] In some embodiments, the second electrode layer has a second electrode body layer and a second velvet layer attached to the second electrode body layer, and the thickness of the second velvet layer is 1 μm to 5 μm. The velvet layer is a layer with a certain degree of roughness, and the velvet layer can be prepared by a velvet process similar to that of a silicon wafer (i.e., using chemical reagents to etch to achieve a certain degree of roughness). By having a velvet layer, i.e., having a certain degree of roughness, the second electrode layer can improve the scattering factor, thereby improving the photoelectric conversion efficiency of the solar cell, and the micropores penetrate the second electrode layer, so the solar cell can have a good transparency effect.

[0040] In order to pursue better photoelectric conversion efficiency, in some embodiments, the first electrode layer has a first electrode body layer and a first velvet layer attached to the first electrode body layer, the thickness of the first velvet layer is 1μm to 5μm, and the first velvet layer is only distributed in the contact area between the first electrode layer and the absorption layer. It can be understood by those skilled in the art that the first velvet layer is not distributed in the position corresponding to the first electrode layer and the micropores, or is distributed as little as possible in the position corresponding to the first electrode layer and the micropores. Please refer to Figure 1, wherein the fold line of the contact surface between the first electrode layer and the absorption layer is the distribution position of the first suede layer, and the straight line of the contact surface between the first electrode layer and the absorption layer is the position where the first suede layer is not distributed.

[0041] Those skilled in the art will appreciate that, in order to further increase the photoelectric conversion efficiency of the solar cell, an anti-reflection layer may be provided on the side of the second electrode layer away from the absorption layer.

[0042] In some embodiments, the material of the second electrode layer includes an opaque conductive material. Further, the opaque conductive material includes at least one of copper, aluminum and alloys thereof. The conductivity of the opaque conductive material is higher. By using the opaque conductive material as the second electrode layer, the electrical loss of the entire solar cell can be reduced.

[0043] In some embodiments, the transparent conductive oxide includes at least one of zinc oxide, tin oxide, and indium tin oxide.

[0044] In some embodiments, the solar cell further comprises a protective layer, the material of the protective layer is a transparent material; the protective layer comprises a protective layer body, and the protective layer body is arranged on a side of the second electrode layer away from the absorption layer. The provision of the protective layer can increase the mechanical strength of the entire solar cell.

[0045] Furthermore, the protective layer includes a microporous filling block, which is arranged on the side of the protective layer body close to the second electrode layer and is arranged in the micropores. The arrangement of the microporous filling block can further increase the mechanical strength of the entire solar cell.

[0046] In some embodiments, the refractive index of the material of the protective layer is 1 to 2. Since the refractive index of the transparent electrode is 1.8 to 2, the preferred refractive index is 1.8. In this embodiment, the protective layer is made of polyparaxylene, polyimide, siloxane, nitride or oxide.

[0047] Figure 2 A schematic diagram of micropore distribution provided in the embodiment of the present application, such as Figure 2 As shown, in some embodiments, the micropores are distributed in an array; further, in the micropores distributed in an array, the spacing s between two adjacent micropores is 50μm to 200μm; and the aperture d of the micropores is 50μm to 200μm. Those skilled in the art will understand that the larger the aperture d of the micropores, the smaller the spacing s between two adjacent micropores, and the higher the transmittance of the solar cell. Conversely, the smaller the aperture d of the micropores, the larger the spacing s between two adjacent micropores, and the better the photoelectric conversion efficiency. By controlling the spacing s between two adjacent micropores to 50μm to 200μm; and the aperture d of the micropores to 50μm to 200μm, the solar cell can have both transmittance and photoelectric conversion efficiency. Taking the spacing s between two adjacent micropores as 100μm and the aperture d of the micropore as 100μm as an example, substitute into the formula By calculating the transmittance of the solar cell, it can be obtained that the transmittance is about 22.6% and the photoelectric conversion area is about 77.4%.

[0048] In some embodiments, the thickness of the first electrode layer is 0.5 μm to 5 μm, preferably 1 μm to 2 μm; the thickness of the absorption layer is 100 μm to 300 μm, preferably 150 μm to 250 μm; the thickness of the second electrode layer is 0.1 μm to 1 μm, preferably 0.3 μm.

[0049] In some embodiments, the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer. It should be noted that the number of layers, thickness and structure of the absorption layer can be determined according to the actual application scenario. For example, in some examples, an additional layer of SiN film can be plated on the n-type and p-type semiconductors to form a light blue anti-reflection film to reduce light reflection.

[0050] Based on a general inventive concept, an embodiment of the present application also provides a method for preparing a transparent solar cell.

[0051] The method is used for preparing the above-mentioned solar cell. The specific content of the solar cell can refer to the above-mentioned embodiment. Since the method adopts part or all of the technical solutions of the above-mentioned embodiment, it at least has all the beneficial effects brought by the technical solutions of the above-mentioned embodiment, which will not be repeated here one by one.

[0052] Figure 3 A flow chart of the method provided in the embodiment of the present application is as follows: Figure 3 As shown, in some embodiments, the method includes:

[0053] S1. stacking a first electrode layer, an absorption layer and a second electrode layer to obtain a primary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the absorption layer includes a silicon-based semiconductor layer;

[0054] S2. Performing a hole-opening process on the primary product to form micropores to obtain a solar cell, wherein the micropores extend from a surface of the second electrode layer away from the first electrode layer toward the first electrode layer and penetrate the second electrode layer and the absorption layer.

[0055] Furthermore, the hole opening process includes chemical etching hole opening process. The chemical etching hole opening process includes dry etching (gas etching) or wet etching (liquid etching), for example, the chemical etching hole opening process can adopt TSV ion etching.

[0056] The present application will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are intended only to illustrate the present application and are not intended to limit the scope of the present application. The experimental methods for which specific conditions are not specified in the following examples are usually measured according to national standards. If there is no corresponding national standard, then the conditions recommended by the manufacturer are followed.

[0057] Example 1

[0058] A solar cell, the preparation process of which is as follows:

[0059] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the absorption layer thickness is 200 μm. The silicon wafer and the second electrode layer are roughened by a texturing process to form a velvet thickness of 3 μm (the second velvet layer thickness is 3 μm), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, and the thickness of the second electrode body layer is 1.5 μm; the material of the protective layer is polyimide, and the protective layer includes a protective layer body, and the protective layer body is arranged on the side of the second electrode layer away from the absorption layer, and the protective layer includes a microporous filling block, and the microporous filling block is arranged on the side of the protective layer body close to the second electrode layer, and the microporous filling block is arranged in the micropores.

[0060] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0061] Example 2

[0062] A solar cell, the preparation process of which is as follows:

[0063] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, the absorption layer thickness is 200 μm, and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, the thickness of the second electrode body layer is 1.5 μm, and the second electrode layer is smooth (i.e., no roughening treatment is performed and there is no second velvet layer); the material of the protective layer is polyimide, the protective layer includes a protective layer body, the protective layer body is arranged on the side of the second electrode layer away from the absorption layer, the protective layer includes a microporous filling block, the microporous filling block is arranged on the side of the protective layer body close to the second electrode layer, and the microporous filling block is arranged in the micropores.

[0064] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0065] Example 3

[0066] A solar cell, the preparation process of which is as follows:

[0067] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the absorption layer thickness is 200 μm, and the silicon wafer and the second electrode layer are roughened by a texturing process to form a velvet thickness of 3 μm (the second velvet layer thickness is 3 μm), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is a transparent conductive oxide, and the thickness of the second electrode body layer is 1.5 μm; the material of the protective layer is polyimide, and the protective layer includes a protective layer body, and the protective layer body is arranged on the side of the second electrode layer away from the absorption layer, and the protective layer includes a micropore filling block, and the micropore filling block is arranged on the side of the protective layer body close to the second electrode layer, and the micropore filling block is arranged in the micropore.

[0068] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0069] Example 4

[0070] A solar cell, the preparation process of which is as follows:

[0071] S1. The first electrode layer, the absorption layer and the second electrode layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the thickness of the absorption layer is 200 μm. The silicon wafer and the second electrode layer are roughened by a texturing process to form a velvet surface with a thickness of 3 um (the thickness of the second velvet layer is 3 μm), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, and the thickness of the second electrode body layer is 1.5 μm.

[0072] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0073] Example 5

[0074] A solar cell, the preparation process of which is as follows:

[0075] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the thickness of the absorption layer is 200 μm. The silicon wafer and the first electrode layer are roughened by a texturing process to form a velvet thickness of 3 μm (the thickness of the first velvet layer is 3 μm), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, and the thickness of the second electrode body layer is 1.5 μm; the material of the protective layer is polyimide, and the protective layer includes a protective layer body, which is arranged on the side of the second electrode layer away from the absorption layer, and the protective layer includes a micropore filling block, which is arranged on the side of the protective layer body close to the second electrode layer, and the micropore filling block is arranged in the micropore.

[0076] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0077] Example 6

[0078] A solar cell, the preparation process of which is as follows:

[0079] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the thickness of the absorption layer is 200 μm. The silicon wafer and the first electrode layer and the second electrode layer are roughened by a texturing process to form a velvet thickness of 3 μm (the first velvet layer and the second velvet layer are 3 μm thick), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, and the thickness of the second electrode body layer is 1.5 μm; the material of the protective layer is polyimide, and the protective layer includes a protective layer body, which is arranged on the side of the second electrode layer away from the absorption layer, and the protective layer includes a microporous filling block, which is arranged on the side of the protective layer body close to the second electrode layer, and the microporous filling block is arranged in the micropores.

[0080] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0081] Comparative Example 1

[0082] A solar cell, the preparation process of which is as follows:

[0083] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the thickness of the absorption layer is 200 μm. The silicon wafer and the second electrode layer are roughened by a texturing process to form a velvet thickness of 3 um (the thickness of the second velvet layer is 3 μm), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, and the thickness of the second electrode body layer is 1.5 μm; the material of the protective layer is polyimide, and the protective layer includes a protective layer body, which is arranged on the side of the second electrode layer away from the absorption layer, and the protective layer includes a micropore filling block, which is arranged on the side of the protective layer body close to the second electrode layer, and the micropore filling block is arranged in the micropore.

[0084] S2. The primary product is subjected to a hole-opening treatment using TSV ion etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the first electrode layer, the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0085] Comparative Example 2

[0086] A solar cell, the preparation process of which is as follows:

[0087] S1. The first electrode layer, the absorption layer, the second electrode layer and the protective layer are stacked to obtain a preliminary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the thickness of the first electrode body layer is 1.5 μm; the absorption layer includes a silicon-based semiconductor layer, and the thickness of the absorption layer is 200 μm. The silicon wafer and the second electrode layer are roughened by a texturing process to form a velvet thickness of 3 um (the thickness of the second velvet layer is 3 μm), and the silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer; the material of the second electrode layer is copper, and the thickness of the second electrode body layer is 1.5 μm; the material of the protective layer is polyimide, and the protective layer includes a protective layer body, which is arranged on the side of the second electrode layer away from the absorption layer, and the protective layer includes a micropore filling block, which is arranged on the side of the protective layer body close to the second electrode layer, and the micropore filling block is arranged in the micropore.

[0088] S2. The primary product is subjected to a hole-opening treatment by laser etching to form micropores to obtain a solar cell, wherein the micropores extend from the surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer. The micropores are distributed in an array, the spacing s between two adjacent micropores is 100 μm, and the aperture d of the micropores is 100 μm.

[0089] It should be noted that in the above embodiments and comparative examples, when the first electrode layer does not have the first suede layer, the thickness of the first electrode body layer is the thickness of the first electrode layer. Similarly, when the second electrode layer does not have the second suede layer, the thickness of the second electrode body layer is the thickness of the second electrode layer.

[0090] The solar cells provided in the embodiments and comparative examples were tested, and the results are shown in the following table:

[0091] Four-point bending strength test Photoelectric conversion efficiency Second electrode resistance efficiency Example 1 104Mpa 15.21％ <![CDATA[3.10×10 -5 Ohm cm]]> Example 2 103Mpa 14.94％ <![CDATA[3.10×10 -5 Ohm cm]]> Example 3 101Mpa 15.11％ <![CDATA[3.88×10 -4 Ohm cm]]> Example 4 86Mpa 15.19％ <![CDATA[3.10×10 -5 Ohm cm]]> Example 5 105Mpa 15.24％ <![CDATA[3.10×10 -5 Ohm cm]]> Example 6 102Mpa 15.25％ <![CDATA[3.10×10 -5 Ohm cm]]> Comparative Example 1 95Mpa 15.08％ <![CDATA[3.10×10 -5 Ohm cm]]> Comparative Example 2 97Mpa 10.54％ <![CDATA[3.10×10 -5 Ohm cm]]>

[0092] It can be seen from the above table that the solar cell provided by the embodiment of the present application has good mechanical strength and photoelectric conversion efficiency in addition to having good transparency.

[0093] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0094] In the present application, in the absence of any contrary description, the directional words used, such as "upper" and "lower", are specifically the directions of the drawings in the accompanying drawings. In addition, in the description of the present specification, the terms "including", "comprising", etc. refer to "including but not limited to". In this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. In this article, "and / or" describes the association relationship of the associated objects, indicating that there may be three relationships, for example, A and / or B, which can represent: A exists alone, A and B exist at the same time, and B exists alone. Wherein A, B can be singular or plural. In this article, "at least one" refers to one or more, and "plural" refers to two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of singular or plural items. For example, "at least one of a, b or c", or "at least one of a, b and c", can both mean: a, b, c, ab (i.e. a and b), ac, bc, or abc, where a, b and c can be single or multiple.

[0095] The above is only a specific implementation of the present application, so that those skilled in the art can understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest range consistent with the principles and novel features applied for herein.

Claims

1. A transparent solar cell, characterized in that: The solar cell comprises: a first electrode layer, an absorption layer and a second electrode layer, which are stacked in sequence, the material of the first electrode layer comprises a transparent conductive oxide, the absorption layer comprises a silicon-based semiconductor layer, and the solar cell is provided with micropores, which extend from a surface of the second electrode layer away from the first electrode layer to the first electrode layer and penetrate the second electrode layer and the absorption layer.

2. The transparent solar cell according to claim 1, characterized in that: The second electrode layer comprises a second electrode body layer and a second suede layer attached to the second electrode body layer, and the thickness of the second suede layer is 1 μm to 5 μm; and / or The first electrode layer comprises a first electrode body layer and a first suede layer attached to the first electrode body layer, the first suede layer has a thickness of 1 μm to 5 μm, and the first suede layer is only distributed in a contact area between the first electrode layer and the absorption layer; and / or The material of the second electrode layer includes an opaque conductive material.

3. The transparent solar cell according to claim 2, characterized in that: The opaque conductive material includes at least one of copper, aluminum and alloys thereof.

4. The transparent solar cell according to claim 1, characterized in that: The transparent conductive oxide includes at least one of zinc oxide, tin oxide, and indium tin oxide.

5. The transparent solar cell according to claim 1, characterized in that: The solar cell further comprises a protective layer, and the material of the protective layer is a transparent material; the protective layer comprises a protective layer body, and the protective layer body is arranged on a side of the second electrode layer away from the absorption layer.

6. The transparent solar cell according to claim 6, characterized in that: The protection layer comprises a micropore filling block, the micropore filling block is arranged on a side of the protection layer body close to the second electrode layer, and the micropore filling block is arranged in the micropore.

7. The transparent solar cell according to claim 6, characterized in that: The refractive index of the material of the protective layer is 1 to 2; and / or The material of the protective layer includes at least one of polyparaxylene, polyimide, siloxane, nitride and oxide.

8. The transparent solar cell according to claim 2, characterized in that: The micropores are distributed in an array; and / or In the micropores distributed in an array, the distance s between two adjacent micropores is 50 μm to 200 μm; and / or The pore size d of the micropores is 50 μm to 200 μm; and / or The thickness of the first electrode body layer is 0.5 μm to 5 μm; and / or The thickness of the absorption layer is 100 μm to 300 μm; and / or The thickness of the second electrode body layer is 0.1 μm to 1 μm; and / or The silicon-based semiconductor layer includes an n-type doped silicon-based semiconductor layer and a p-type doped silicon-based semiconductor layer.

9. A method for preparing a transparent solar cell, characterized in that: The method comprises: A first electrode layer, an absorption layer and a second electrode layer are stacked to obtain a primary product, wherein the material of the first electrode layer includes a transparent conductive oxide, and the absorption layer includes a silicon-based semiconductor layer; The primary product is subjected to a pore-forming treatment to form micropores to obtain a solar cell, wherein the micropores extend from a surface of the second electrode layer away from the first electrode layer toward the first electrode layer and penetrate the second electrode layer and the absorption layer.

10. The method for preparing a transparent solar cell according to claim 9, characterized in that: The hole opening process includes a chemical etching hole opening process.

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