This invention relates to a
memristor based on ball milling for the preparation of lead-free inorganic
perovskite quantum dots and its preparation method, belonging to the technical field of lead-free inorganic
perovskite-based non-volatile storage and neuromorphic computing devices. This invention employs a green
solid-state ball milling method to prepare lead-free inorganic
perovskite quantum dots, addressing the industry pain points of high
toxicity, poor
environmental stability, and reliance on high-temperature organic solvents in
quantum dot synthesis of traditional lead-containing perovskites. Through a two-step ball milling process, controllable
quantum dot size (5~20 nm) and high dispersibility are achieved. Combined with
spin coating, low-temperature annealing, and
vacuum evaporation of the top
electrode, a sandwich structure
memristor of "conductive substrate /
quantum dot film / top
electrode" is constructed. This invention achieves lead-free, highly stable, low-operating-
voltage memristor output with an on / off ratio of 10. 3 It can simulate the behavior of neural synapses; the process involves no high-temperature heat injection, is low in
toxicity, and can be
mass-produced at the
gram level. It is compatible with
flexible electronics and large-area fabrication, and is suitable for low-power neuromorphic computing, artificial synapses, flexible storage and other scenarios.