Rod sticking glue, transverse cutting process of rectangular silicon wafer and cutting device of rectangular silicon wafer

Abstract

The invention relates to the technical field of silicon wafer cutting, in particular to stick glue, a transverse cutting process of a rectangular silicon wafer and a cutting device of the rectangular silicon wafer. The stick glue comprises an adhesive and a curing agent in a mass ratio of (1.15-1.25): 1; the adhesive comprises a mixture of epoxy resin, a dispersing agent, a stabilizing agent and a coloring agent; the curing agent comprises a mixture of polymercaptan, an accelerant, a defoaming agent, a coupling agent, a dispersing agent, a stabilizing agent and a flatting agent. By adjusting the formula of the stick glue and optimizing the cutting process, distribution of new and old lines, the line speed, the machine speed and the like in the cutting process are specifically optimized, and cutting of the large-size rectangular silicon wafer can be completed under the conditions of lower line breaking rate and cutting rate. For the same silicon wafer size, the battery printing pattern and direction can be redesigned, and a larger size can be designed; and meanwhile, the space utilization rate of the assembly can be improved through more pattern configuration.

Description

Technical Field

[0001] The invention relates to the technical field of silicon wafer cutting, in particular to a cross-cutting process of a rectangular silicon wafer with an adhesive stick and a cutting device thereof. Background Art

[0002] At present, with the development of solar monocrystalline silicon wafers in larger size, thinner slices and finer lines, the efficiency of silicon wafer modules has not only been improved, but also the module methods have been required to be diversified, resulting in the lateral cutting scheme of ultra-thin silicon wafers of various sizes with the line marks parallel to the long edge.

[0003] Based on the current cutting specifications, a cross-cutting process for N-type 19X×18X rectangular silicon wafers is proposed. Summary of the invention

[0004] In order to solve the above problems in the prior art, the present invention provides a wire bonding method for broken tungsten wires, a method for cutting crystalline silicon, and applications thereof in improving color difference caused by broken wire bonding.

[0005] Based on this, the present invention has the following technical solutions: In a first aspect, the present invention provides an adhesive stick glue, characterized in that the adhesive stick glue comprises an adhesive and a curing agent in a mass ratio of (1.15~1.25):1; the adhesive comprises a mixture of epoxy resin, a dispersant, a stabilizer and a colorant; the curing agent comprises a mixture of polythiol, a accelerator, a defoaming agent, a coupling agent, a dispersant, a stabilizer and a leveling agent.

[0006] According to the present invention, a stick adhesive is provided, wherein the adhesive comprises the following components in parts by weight: Epoxy resin 50~60 parts, Dispersant 1~3 parts, 1~3 parts of stabilizer, 1~4 parts of colorant.

[0007] According to the stick glue provided by the present invention, the curing agent comprises the following components in parts by weight: 55-60 parts of polythiol, 5~8 parts of accelerator, Defoaming agent 0.1~1 part, Coupling agent 0.1~1 part, Dispersant 0.1~1 part, Stabilizer 0.1~1 part, 0.1~1 part of leveling agent.

[0008] In a second aspect, the present invention provides a cross-cutting process for rectangular silicon wafers, comprising: using the stick adhesive to bond the long side of the crystal rod to a plastic plate; and cutting using the following process: Cutting stage: Table speed ≤ 1.5 mm / min for lowering the lifting table; wire speed ≤ 12 m / s; wire feeding amount ≥ 1400 m, wire returning amount ≥ 1400 m; Intermediate cutting stage: Table speed ≤ 2.4 mm / min for lowering the lifting table; wire speed ≥ 35 m / s for cutting; incoming wire amount ≤ 1055 m, returning wire amount ≤ 900 m; Tool retraction stage: Table speed ≤ 0.2 mm / min for lowering the lifting table; wire speed ≤ 25 m / s for tool retraction; incoming wire amount ≤ 1100 m, returning wire amount ≤ 1900 m.

[0009] A horizontal cutting process for rectangular silicon wafers provided by the present invention is carried out by the following process: First cutting stage: Table speed ≤ 1.5 mm / min for lowering the lifting table; wire speed ≤ 12 m / s; wire feeding amount ≥ 1400 m, wire returning amount ≥ 1400 m; Second cutting stage: Table speed 1.8 - 2 mm / min for lowering the lifting table; wire speed 12 - 25 m / s for cutting; wire feeding amount 800 m - 900 m, wire returning amount 700 - 800 m.

[0010] Third cutting stage: Table speed 2.2 mm / min - 2.4 mm / min for lowering the lifting table; wire speed 35 m / s - 38 m / s for cutting; incoming wire amount ≤ 1055 m, returning wire amount ≤ 900 m; Fourth cutting stage: Table speed ≤ 0.2 mm / min for lowering the lifting table; wire speed ≤ 25 m / s for tool retraction; incoming wire amount ≤ 1100 m, returning wire amount ≤ 1900 m.

[0011] A horizontal cutting process for rectangular silicon wafers provided by the present invention is carried out by the following process: First step: Cutting depth h ≤ 5 mm, wire speed ≤ 12 m / s, crystal bar lowering table speed ≤ 1.5 mm / min; incoming wire is 1400 m - 1500 m, returning wire is 1400 m - 1450 m; Second step: Cutting depth h is set to 5 mm < h ≤ 10 mm, wire speed is 20 m / s - 22 m / s, crystal bar lowering table speed is 1.8 mm / min - 2.0 mm / min, wire feeding amount 800 m - 900 m, wire returning amount 750 m - 800 m; Third step: Cutting depth h is set to 10 mm < h < 20 mm, wire speed is 30 m / s - 32 m / s, crystal bar lowering table speed is 2 mm / min - 2.2 mm / min, wire feeding amount 800 m - 900 m, wire returning amount 750 m - 800 m; Step 4~9: The cutting depth h is set to 20 mm ≤ h < 165 mm, the tungsten wire speed is set to 35 m / s~38 m / s, the crystal rod descending speed is 2.2 mm / min~2.4 mm / min, the wire feeding amount is set to 980 m~1055 m, and the wire return amount is 764 m~900 m; Step 10~14: The cutting depth h is set to 165 mm ≤ h < 188 mm, the wire speed is 35 m / s~38 m / s, the crystal rod table speed is reduced from 2.0 mm / min to 0.8 mm / min, the wire feeding amount is 1060 m~1294 m, and the wire return amount is 820 m~920 m; Step 15~Step 19: The cutting depth h is set to 188 mm ≤ h < 192.5 mm, the line speed is reduced from 35 m / s to 23 m / s, the crystal rod table speed is reduced from 0.6 mm / min to 0.1 mm / min, the wire feeding amount is set to 900 m~1320 m, and the return wire amount is set to 985 m~1900 m.

[0012] According to a cross-cutting process for rectangular silicon wafers provided by the present invention, in the process of using the stick adhesive to bond the crystal rod to the plastic plate, the stick adhesive temperature is 23 degrees Celsius to 26 degrees Celsius, and the curing time is ≥2 hours.

[0013] According to a cross-cutting process for a rectangular silicon wafer provided by the present invention, when a cutting line cuts the rectangular silicon wafer, acceleration values ​​of acceleration and deceleration are both 6 to 8 m / s2.

[0014] According to a cross-cutting process of a rectangular silicon wafer provided by the present invention, the rectangular silicon wafer is an N-type rectangular silicon wafer, and its size is: 190-199 mm in length and 180-189 mm in width.

[0015] In a third aspect, the present invention provides a silicon wafer cutting device, comprising: A cutting wire and a main roller group, wherein the cutting wire is a tungsten wire, and the groove wall thickness of the main roller is 50-60 microns; the cutting wire is wound around the main roller group, and the main roller group is used to drive the cutting wire to run; A plastic plate and a feeding table, wherein the size of the plastic plate is adapted to the size of the rectangular silicon wafer; the plastic plate is connected to the moving table, and the moving table is used to drive the plastic plate to approach or move away from the cutting line, and the side of the plastic plate facing the crystal rod is bonded to the crystal rod through the stick adhesive.

[0016] The adhesive stick glue, rectangular silicon wafer cross-cutting process and cutting device provided by the present invention can complete the cutting of large-size rectangular silicon wafers with lower wire breakage rate and over-cutting rate by adjusting the adhesive stick glue formula and optimizing the cutting process, specifically optimizing the distribution of new and old lines and line speed, table speed, etc. in the cutting process. For the same silicon wafer size, the battery printing pattern and direction can be redesigned to design a larger size; at the same time, more pattern configurations can be used to improve the space utilization of the component. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 It is a schematic diagram of a cutting device for rectangular silicon wafers in Example 1 provided by the present invention.

[0019] Description of the drawings: feed table 1; plastic plate 2; crystal rod 3; main roller set 4; cutting line 5. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] In a first aspect, the present invention provides an adhesive stick glue, characterized in that the adhesive stick glue comprises an adhesive and a curing agent in a mass ratio of (1.15~1.25):1; the adhesive comprises a mixture of epoxy resin, a dispersant, a stabilizer and a colorant; the curing agent comprises a mixture of polythiol, a accelerator, a defoaming agent, a coupling agent, a dispersant, a stabilizer and a leveling agent.

[0022] The present invention finds that, compared with the normal vertical cutting process, by adjusting the ratio of the adhesive and the curing agent in the stick adhesive during cross-cutting, the bonding force and hardness of the stick adhesive can be effectively improved, which is more conducive to bonding large-sized crystal rods.

[0023] According to the present invention, a stick adhesive is provided, wherein the adhesive comprises the following components in parts by weight: Epoxy resin 50~60 parts, Dispersant 1~3 parts, 1~3 parts of stabilizer, 1~4 parts of colorant.

[0024] According to the stick glue provided by the present invention, the curing agent comprises the following components in parts by weight: 55-60 parts of polythiol, 5~8 parts of accelerator, Defoaming agent 0.1~1 part, Coupling agent 0.1~1 part, Dispersant 0.1~1 part, Stabilizer 0.1~1 part, 0.1~1 part of leveling agent.

[0025] In the present invention, when the stick glue is used to bond the plastic plate and the large-sized crystal rod, the amount of glue used is increased according to the actual situation, for example, 52 grams can be adjusted to 55 grams. At the same time, the glue track is also adjusted according to the specific size of the crystal rod and the plastic plate.

[0026] In a second aspect, the present invention provides a cross-cutting process for rectangular silicon wafers, comprising: using the stick adhesive to bond the long side of the crystal rod to a plastic plate; and cutting using the following process: Cutting stage: Platform speed ≤1.5 mm / min for lowering and lowering platforms; Line speed ≤12 m / s; Wire delivery volume ≥1400 m, and wire return volume ≥1400 m; Intermediate cutting stage: Table speed ≤2.4 mm / min for lowering and lowering the table; Line speed ≥35 m / s for cutting; Incoming line quantity ≤1055 m, Returning line quantity ≤900 m; Closing stage: The table speed is ≤0.2 mm / min for lowering the table; the line speed is ≤25 m / s for retracting the knife; the incoming line quantity is ≤1100 m, and the returning line quantity is ≤1900 m.

[0027] In the present invention, in consideration of the need to strengthen the cutting force due to the increased cutting area and the increased liquid-carrying capacity of the steel wire, resulting in an increase in the overall cutting process cycle, the above optimizations are made to the cutting process. Specifically: In the knife-entry stage, a low table speed (the table speed is reduced by 0.3 - 0.5 mm / min compared to the vertical cutting process), a slow wire speed (the wire speed is reduced by 3 - 8 m / s compared to the vertical cutting process), and a large-cycle wire feeding are adopted to ensure stable knife entry. In the middle cutting stage, a medium table speed (the table speed is reduced by 0.3 - 0.2 mm / min compared to the vertical cutting process), a fast wire speed (the wire speed is increased by 2 - 6 m / s compared to the vertical cutting process), and a reduced cycle compared to the vertical cutting process are used to reduce wire breakage. In the knife-withdrawal stage, an even lower table speed (the table speed is reduced by 0.05 - 0.1 mm / min compared to the vertical cutting process), an even lower wire speed (the wire speed is reduced by 2 - 9 m / s compared to the vertical cutting process), and a smaller cycle compared to the vertical cutting process are used to reduce chipping.

[0028] According to a horizontal cutting process for rectangular silicon wafers provided by the present invention, the following process is used for cutting: The first cutting stage: The table speed ≤ 1.5 mm / min to lower and raise the table; the wire speed ≤ 12 m / s; the wire feeding amount ≥ 1400 m, and the wire returning amount ≥ 1400 m; The second cutting stage: The table speed 1.8 - 2 mm / min to lower and raise the table; the wire speed 12 - 25 m / s for cutting; the wire feeding amount 800 m - 900 m, and the wire returning amount 700 - 800 m.

[0029] The third cutting stage: The table speed 2.2 mm / min - 2.4 mm / min to lower and raise the table; the wire speed 35 m / s - 38 m / s for cutting; the wire feeding amount ≤ 1055 m, and the wire returning amount ≤ 900 m; The fourth cutting stage: The table speed ≤ 0.2 mm / min to lower and raise the table; the wire speed ≤ 25 m / s for knife withdrawal; the wire feeding amount ≤ 1100 m, and the wire returning amount ≤ 1900 m.

[0030] According to a horizontal cutting process for rectangular silicon wafers provided by the present invention, the following process is used for cutting: The first step: The cutting depth h ≤ 5 mm, the wire speed ≤ 12 m / s, and the descending table speed of the crystal bar ≤ 1.5 mm / min; the wire feeding is 1400 m - 1500 m, and the wire returning is 1400 m - 1450 m; The second step: The cutting depth h is set to 5 mm < h ≤ 10 mm, the wire speed is 20 m / s - 22 m / s, the descending table speed of the crystal bar is 1.8 mm / min - 2.0 mm / min, the wire feeding amount is 800 m - 900 m, and the wire returning amount is 750 m - 800 m; Step 3: Set the cutting depth h to be 10 mm < h < 20 mm, the wire speed to be 30 m / s to 32 m / s, the descending speed of the ingot stage to be 2 mm / min to 2.2 mm / min, the wire feeding amount to be 800 m to 900 m, and the wire retracting amount to be 750 m to 800 m; Steps 4 to 9: Set the cutting depth h to be 20 mm ≤ h < 165 mm, the tungsten wire speed to be 35 m / s to 38 m / s, the descending speed of the ingot stage to be 2.2 mm / min to 2.4 mm / min, the wire feeding amount to be 980 m to 1055 m, and the wire retracting amount to be 764 m to 900 m; Steps 10 to 14: Set the cutting depth h to be 165 mm ≤ h < 188 mm, the wire speed to be 35 m / s to 38 m / s, the speed of the ingot stage to decrease from 2.0 mm / min to 0.8 mm / min, the wire feeding amount to be 1060 m to 1294 m, and the wire retracting amount to be 820 m to 920 m; Steps 15 to 19: Set the cutting depth h to be 188 mm ≤ h < 192.5 mm, the wire speed to decrease from 35 m / s to 23 m / s, the speed of the ingot stage to decrease from 0.6 mm / min to 0.1 mm / min, the wire feeding amount to be 900 m to 1320 m, and the wire retracting amount to be 985 m to 1900 m.

[0031] According to a horizontal cutting process for rectangular silicon wafers provided by the present invention, during the process of bonding the ingot to the plastic plate using the stick-bonding glue, the stick-bonding temperature is 23 °C to 26 °C, and the curing time is ≥ 2 hours.

[0032] According to a horizontal cutting process for rectangular silicon wafers provided by the present invention, when the cutting wire cuts the rectangular silicon wafer, the acceleration values during acceleration and deceleration are both 6 to 8 m / s².

[0033] According to a horizontal cutting process for rectangular silicon wafers provided by the present invention, the rectangular silicon wafer is an N-type rectangular silicon wafer, and its dimensions are: length 190 to 199 mm, width 180 to 189 mm.

[0034] In a third aspect, the present invention provides a silicon wafer cutting device, including: A cutting wire and a main roller set, the cutting wire is a tungsten wire, and the groove wall thickness of the main roller is 50 to 60 μm; the cutting wire is wound around the main roller set, and the main roller set is used to drive the cutting wire to run; A plastic plate and a feeding table, the size of the plastic plate is adapted to the size of the rectangular silicon wafer; the plastic plate is connected to the moving table, the moving table is used to drive the plastic plate to approach or move away from the cutting wire, and the side of the plastic plate facing the ingot is bonded to the ingot through the stick-bonding glue.

[0035] In the present invention, the cross-cutting process selects tungsten wire cutting, and tungsten wire has a lower wire diameter, higher cutting force and wear resistance than diamond wire.

[0036] In the specific implementation process, the groove wall thickness of the main roller can be increased to the above range by coating the material.

[0037] In order to further illustrate the technical solution of the present invention, the present invention provides the following specific embodiments and comparative examples.

[0038] Unless otherwise specified, the various raw materials used in the examples and comparative examples are commercially available conventional raw materials, and the technical means used are conventional means well known to those skilled in the art.

[0039] Example 1 The present invention provides a silicon wafer cutting device (a schematic diagram of the cutting device is shown in Figure 1 ),include: A feeding table 1 and a plastic plate 2, wherein the size of the plastic plate is adapted to the size of the rectangular silicon wafer; the plastic plate is connected to the moving table, and the moving table is used to drive the plastic plate to approach or move away from the cutting line, and the side of the plastic plate facing the crystal rod 3 is bonded to the crystal rod by a stick adhesive.

[0040] The stick glue is divided into AB component glue, component A is an adhesive, containing 55 parts of epoxy resin, 1.2 parts of dispersant, 2 parts of stabilizer, and 2 parts of colorant; component B is a curing agent, containing 58 parts of polythiol, 6 parts of accelerator, 0.5 parts of defoamer, 0.5 parts of coupling agent, 0.3 parts of dispersant, 0.6 parts of stabilizer, and 00.8 parts of leveling agent. The mass ratio of glue AB in the process is 1.2:1, and the total amount of glue is increased from 52 grams to 55 grams. The temperature of the stick is controlled at 23~26℃, and the curing time is ≥2 hours. At the same time, the glue track is adjusted from the maximum width of 18Xmm to 19Xmm.

[0041] A main roller group 4 and a cutting wire 5, wherein the cutting wire is a tungsten wire, and the groove wall thickness of the main roller is 52 microns; the cutting wire is wound around the main roller group, and the main roller group is used to drive the cutting wire to run; This embodiment provides a cross-cutting process for an N-type 19X×18X rectangular silicon wafer, including: Lay the cutting tungsten wire on the main roller of the slicer, then push the cleaned crystal rod into the cutting chamber of the diamond wire multi-wire slicer and clamp it as shown in Figure 1.

[0042] Select the slicer process recipe and set the acceleration and deceleration to 6~8 m / s2. The specific case is as follows: a) The first step of the process: the cutting depth is set to 5 mm, the crystal rod descending speed is 1.5 mm / min; the tungsten wire rotates from the right main roller to the left main roller, the tungsten wire line speed is 12 m / s, the steel wire feed line is 1500 m, and the return line is 1450.

[0043] b) The second step of the process: the cutting depth is set to 10 mm, the tungsten wire speed is set to 22 m / s, the crystal rod descending speed is 2.0 mm / min, the wire feeding amount is 878 m, and the wire return amount is 798 m.

[0044] c) The third step of the process: the cutting depth is set to 15 mm, the tungsten wire speed is set to 32 m / s, the crystal rod descending speed is 2.2 mm / min, the wire feeding amount is 858 m, and the wire return amount is 788 m.

[0045] d) Process steps 4 to 9: The cutting depth is set to 20 mm, 60 mm, 90 mm, 110 mm, 130 mm, and 155 m, the tungsten wire speed is set to 38 m / s, the crystal rod descending speed is 2.4 mm / min, the wire feeding amount is set to 980 m, 905 m, 920 m, 924 m, 930 m, and 1055 m, and the return wire amount is 900 m, 777 m, 773 m, 768 m, 764 m, and 845 m.

[0046] e) Process steps 10 to 14: the cutting depth is set to 165 mm, 175 mm, 180 mm, 184 mm, and 186 mm, the tungsten wire speed is set to 38 m / s, the crystal rod descending speed is 2.0 mm / min, 1.8 mm / min, 1.6 mm / min, 1.2 mm / min, and 0.8 mm / min, the wire feeding amount is set to 1060 m, 1070 m, 1080 m, 1205 m, and 1294 m, and the return wire amount is 840 m, 830 m, 820 m, and 920 m.

[0047] f) Process steps 15 to 19: the cutting depth is set to 188 mm, 189 mm, 191 mm, 192 mm, and 192.5 mm. The tungsten wire speed is set to 35 m / s, 30 m / s, 25 m / s, 23 m / s, and 23 m / s. The crystal rod descending speed is 0.6 mm / min, 0.5 mm / min, 0.3 mm / min, 0.2 mm / min, and 0.1 mm / min. The wire feeding amount is set to 1320 m, 900 m, 930 m, 1000 m, and 1100 m. The return wire amount is 985 m, 1600 m, 1700 m, 1800 m, and 1900 m.

[0048] Add 450~650 L of pure water and 3L~4L of cutting fluid to the tungsten wire and start cutting.

[0049] Example 2 This embodiment provides a cross-cutting process for an N-type 19X×18X rectangular silicon wafer, including: a) The first step of the process: the cutting depth is set to 5 mm, the crystal rod descending speed is 1.4 mm / min; the tungsten wire rotates from the right main roller to the left main roller, the tungsten wire line speed is 11 m / s, the steel wire feed line is 1500 m, and the return line is 1400.

[0050] b) The second step of the process: the cutting depth is set to 10 mm, the tungsten wire speed is set to 20 m / s, the crystal rod descending speed is 1.9 mm / min, the wire feeding amount is 878 m, and the wire return amount is 798 m.

[0051] c) The third step of the process: the cutting depth is set to 15 mm, the tungsten wire speed is set to 31 m / s, the crystal rod descending speed is 2.1 mm / min, the wire feeding amount is 858 m, and the wire return amount is 788 m.

[0052] d) Process steps 4 to 9: The cutting depth is set to 20 mm, 60 mm, 90 mm, 110 mm, 130 mm, and 155 m, the tungsten wire speed is set to 37 m / s, the crystal rod descending speed is 2.4 mm / min, the wire feeding amount is set to 980 m, 905 m, 920 m, 924 m, 930 m, and 1055 m, and the return wire amount is 900 m, 777 m, 773 m, 768 m, 764 m, and 845 m.

[0053] e) Process steps 10 to 14: the cutting depth is set to 165 mm, 175 mm, 180 mm, 184 mm, and 186 mm, the tungsten wire speed is set to 38 m / s, the crystal rod descending speed is 2.0 mm / min, 1.8 mm / min, 1.6 mm / min, 1.2 mm / min, and 0.8 mm / min, the wire feeding amount is set to 1060 m, 1070 m, 1080 m, 1205 m, and 1294 m, and the return wire amount is 840 m, 830 m, 820 m, and 920 m.

[0054] f) Process steps 15 to 19: the cutting depth is set to 188 mm, 189 mm, 191 mm, 192 mm, and 192.5 mm. The tungsten wire speed is set to 35 m / s, 30 m / s, 25 m / s, 23 m / s, and 23 m / s. The crystal rod descending speed is 0.6 mm / min, 0.5 mm / min, 0.3 mm / min, 0.2 mm / min, and 0.1 mm / min. The wire feeding amount is set to 1320 m, 900 m, 930 m, 1000 m, and 1100 m. The return wire amount is 985 m, 1600 m, 1700 m, 1800 m, and 1900 m.

[0055] Add 450~650 liters of pure water and 3~4 liters of cutting fluid to the tungsten wire and start cutting.

[0056] Comparative Example 1 This embodiment provides a cross-cutting process for an N-type 19X×18X rectangular silicon wafer, including: The difference between this embodiment and the first embodiment is that: Step 1: The cutting depth is set to 5 mm, the diamond wire rotates from the left main roller to the right main roller, the line speed is 15 m / s, the cutting line length is 1500 m, and the feed speed is 1.5 mm / min. The diamond wire rotates from the right main roller to the left main roller, the line speed is 15 m / s, the diamond wire length is 1400 m, and the feed speed is 1.5 mm / min.

[0057] Step 2: The cutting depth is set to 10 mm, the wire speed is set to 15 m / s, the feed speed is 1.5 mm / min, the wire feed amount is 770 m, and the wire return amount is 660 m.

[0058] Step 3: The cutting depth is set to 15 mm, the wire speed is set to 25 m / s, the feed speed is 2.4 mm / min, the wire feed amount is 780 m, and the wire return amount is 670 m.

[0059] From the fourth to the ninth step, the cutting depths are set to 20 mm, 60 mm, 90 mm, 110 mm, 130 mm, and 150 mm respectively, the line speeds are set to 36 m / s, the feed speeds are set to 2.5 mm / min, the wire feed amounts are set to 880 m, 885 m, 890 m, 910 m, 930 m, and 970 m respectively, and the wire return amounts are set to 780 m, 775 m, 785 m, 800 m, 805 m, and 815 m respectively.

[0060] From step 10 to step 14, the cutting depths are set to 165 mm, 175 mm, 180 mm, 184 mm, and 186 mm respectively, the line speeds are set to 36 m / s, the feed speeds are 2.3 mm / min, 2.2 mm / min, 2 mm / min, 1.4 mm / min, and 0.9 mm / min, the wire feed amounts are set to 990 m, 1000 m, 1050 m, 1100 m, and 1150 m respectively, and the wire return amounts are set to 792 m, 779 m, 805 m, and 850 m respectively.

[0061] From step 15 to step 19, the cutting depths are set to 188 mm, 189 mm, 191 mm, 192 mm, and 192.5 mm respectively; the line speeds are set to 34 m / s, 30 m / s, 28 m / s, 25 m / s, and 23 m / s respectively; the feed speeds are set to 0.6 mm / min, 0.5 mm / min, 0.3 mm / min, 0.2 mm / min, and 0.1 mm / min respectively; the wire feed amounts are set to 1150 m, 1190 m, 1050 m, 670 m, and 600 m respectively; and the wire return amounts are set to 810 m, 830 m, 670 m, 1100 m, and 1160 m respectively.

[0062] Test example The present invention uses a multi-wire cutting machine YJ-XQL921H to verify the cutting methods of the above embodiments and comparative examples, and the results are shown in Table 1: Table 1

[0063] It can be seen from Table 1 that the silicon wafer cutting method provided in the embodiment of the present invention can effectively reduce the wire breakage rate and the edge collapse rate of the adhesive surface of the silicon wafer, shorten the cutting time, and improve the cutting efficiency, compared with the vertical silicon wafer cutting method in the prior art.

[0064] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A stick adhesive, characterized in that: The stick adhesive comprises an adhesive and a curing agent with a mass ratio of (1.15 to 1.25):1; the adhesive comprises a mixture of epoxy resin, dispersant, stabilizer and colorant; the curing agent comprises a mixture of polythiol, accelerator, defoamer, coupling agent, dispersant, stabilizer and leveling agent.

2. The stick adhesive according to claim 1, characterized in that: The adhesive comprises the following components in parts by weight: 50 to 60 parts of epoxy resin, 1 to 3 parts of dispersant, 1 to 3 parts of stabilizer, 1 to 4 parts of colorant.

3. The stick adhesive according to claim 1, characterized in that: The curing agent comprises the following components in parts by weight: 55 to 60 parts of polythiol, 5 to 8 parts of accelerator, 0.1 to 1 part of defoamer, 0.1 to 1 part of coupling agent, 0.1 to 1 part of dispersant, 0.1 to 1 part of stabilizer, 0.1 to 1 part of leveling agent.

4. A cross-cutting process for rectangular silicon wafers, characterized in that: Comprising: Using the stick adhesive according to any one of claims 1 to 3, bonding the long side of the ingot to the plastic plate; and performing cutting by the following process: Knife-in stage: Lower the lifting table with a table speed ≤ 1.5 mm / min; wire speed ≤ 12 m / s; wire feeding amount ≥ 1400 m, wire returning amount ≥ 1400 m; Intermediate cutting stage: Lower the lifting table with a table speed ≤ 2.4 mm / min; cut with a wire speed ≥ 35 m / s; incoming wire amount ≤ 1055 m, outgoing wire amount ≤ 900 m; Knife-out stage: Lower the lifting table with a table speed ≤ 0.2 mm / min; retract the knife with a wire speed ≤ 25 m / s; incoming wire amount ≤ 1100 m, outgoing wire amount ≤ 1900 m.

5. The cross-cutting process for rectangular silicon wafers according to claim 4, characterized in that: Perform cutting by the following process: First cutting stage: Lower the lifting table with a table speed ≤ 1.5 mm / min; wire speed ≤ 12 m / s; wire feeding amount ≥ 1400 m, wire returning amount ≥ 1400 m; Second cutting stage: Lower the lifting table with a table speed of 1.8 to 2 mm / min; cut with a wire speed of 12 to 25 m / s; wire feeding amount 800 m to 900 m, wire returning amount 700 to 800 m. Third cutting stage: Lower the lifting table with a table speed of 2.2 mm / min to 2.4 mm / min; cut with a wire speed of 35 m / s to 38 m / s; incoming wire amount ≤ 1055 m, outgoing wire amount ≤ 900 m; Fourth cutting stage: Lower the lifting table with a table speed ≤ 0.2 mm / min; retract the knife with a wire speed ≤ 25 m / s; incoming wire amount ≤ 1100 m, outgoing wire amount ≤ 1900 m.

6. The cross-cutting process for rectangular silicon wafers according to claim 4 or 5, characterized in that: Perform cutting by the following process: First step: cutting depth h ≤ 5 mm, wire speed ≤ 12 m / s, ingot lowering table speed ≤ 1.5 mm / min; incoming wire 1400 m to 1500 m, outgoing wire 1400 m to 1450 m; Second step: set cutting depth h to 5 mm < h ≤ 10 mm, wire speed 20 m / s to 22 m / s, ingot lowering table speed 1.8 mm / min to 2.0 mm / min, wire feeding amount 800 m to 900 m, wire returning amount 750 m to 800 m; Third step: set cutting depth h to 10 mm < h < 20 mm, wire speed 30 m / s to 32 m / s, ingot lowering table speed 2 mm / min to 2.2 mm / min, wire feeding amount 800 m to 900 m, wire returning amount 750 m to 800 m; Step 4~9: The cutting depth h is set to 20 mm ≤ h < 165 mm, the tungsten wire speed is set to 35 m / s~38 m / s, the crystal rod descending speed is 2.2 mm / min~2.4 mm / min, the wire feeding amount is set to 980 m~1055 m, and the wire return amount is 764 m~900 m; Step 10~14: The cutting depth h is set to 165 mm ≤ h < 188 mm, the wire speed is 35 m / s~38 m / s, the crystal rod table speed is reduced from 2.0 mm / min to 0.8 mm / min, the wire feeding amount is 1060 m~1294 m, and the wire return amount is 820 m~920 m; Step 15~Step 19: The cutting depth h is set to 188 mm ≤ h < 192.5 mm, the line speed is reduced from 35 m / s to 23 m / s, the crystal rod table speed is reduced from 0.6 mm / min to 0.1 mm / min, the wire feeding amount is set to 900 m~1320 m, and the return wire amount is set to 985 m~1900 m.

7. The cross-cutting process for a rectangular silicon wafer according to any one of claims 4 to 6, characterized in that: In the process of using the stick adhesive to bond the crystal rod to the plastic plate, the temperature of the stick adhesive is 23 degrees Celsius to 26 degrees Celsius, and the curing time is ≥2 hours.

8. The cross-cutting process for a rectangular silicon wafer according to any one of claims 4 to 7, characterized in that: When the cutting wire cuts the rectangular silicon wafer, the acceleration values ​​of acceleration and deceleration are both 6 to 8 m / s2.

9. The cross-cutting process for rectangular silicon wafers according to any one of claims 4 to 8, characterized in that: The rectangular silicon wafer is an N-type rectangular silicon wafer, and its size is: 180-189 mm in length and 190-199 mm in width.

10. A silicon wafer cutting device, characterized in that: include: A cutting wire and a main roller group, wherein the cutting wire is a tungsten wire, and the groove wall thickness of the main roller is 50-60 microns; the cutting wire is wound around the main roller group, and the main roller group is used to drive the cutting wire to run; A plastic plate and a feed table, wherein the size of the plastic plate is adapted to the size of the rectangular silicon wafer; the plastic plate is connected to the moving table, and the moving table is used to drive the plastic plate to approach or move away from the cutting line, and the side of the plastic plate facing the crystal rod is bonded to the crystal rod by the stick adhesive according to any one of claims 1 to 3.

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