Flux method gallium nitride single crystal growth continuous feeding device and method

Abstract

The invention discloses a flux method gallium nitride single crystal growth continuous feeding device and method. The device comprises a pressure balance adjusting system, a high-temperature and high-pressure cavity, a crystal growth crucible and a high-pressure cavity filled with raw materials. A crystal growth crucible is arranged in the high-temperature and high-pressure cavity, and a raw material preheating pipe is arranged above the crystal growth crucible; a raw material conveying pipeline is arranged between the high-pressure cavity filled with raw materials and the high-temperature and high-pressure cavity; the pressure in the high-pressure cavity and the high-temperature and high-pressure cavity is adjusted through the pressure balance adjusting system, so that raw materials in the high-pressure cavity are continuously added into the high-temperature and high-pressure cavity. The single crystal growth cavity and the raw material cavity are arranged, the pressure balance adjusting system is adopted to dynamically adjust the gas pressure difference in the single crystal growth cavity and the raw material cavity according to the consumption of raw materials in the single crystal growth cavity, supplement of gas raw materials needed by single crystal growth and addition of liquid raw materials are achieved, and then continuous development of crystals is achieved; and the growth of the large-size gallium nitride single crystal can be realized.

Description

Technical Field

[0001] The invention belongs to the technical field of crystal preparation, and in particular relates to a continuous feeding device and method for growing gallium nitride single crystal by a flux method. Background Art

[0002] Gallium nitride (GaN) is a third-generation wide bandgap semiconductor material with great application prospects in the fields of high-power electronics and microwave radio frequency devices. At present, the flux method for growing GaN crystals is a growth method with mild growth conditions, high crystal quality and low cost, and has the potential to grow high-quality, large-size and low-cost GaN single crystals. However, the traditional flux method for growing GaN crystals is to configure raw materials and flux before crystal growth, and then put them into a closed autoclave, and pass nitrogen gas to grow crystals. The growth volume of the crystal is limited by the amount of raw materials configured, which is not conducive to obtaining large-size single crystals. In addition, during the growth process of GaN crystals grown by the flux method, the flux can be continuously used after reaching stability. However, after the raw materials are consumed, the traditional flux method for growing GaN crystals completes crystal growth and enters the post-processing process, where the flux is reacted and dissolved, resulting in a waste of flux. Summary of the invention

[0003] The present invention aims to solve the technical problems of fixed raw material amount and flux waste in the above-mentioned traditional flux method for growing GaN single crystals, and aims to provide a continuous feeding device and method for flux method gallium nitride single crystal growth under high temperature and high pressure environment.

[0004] To achieve the above purpose, the technical solution adopted by the present invention is as follows:

[0005] A continuous feeding device for growing gallium nitride single crystal by flux method, comprising a pressure balance regulating system, a high temperature and high pressure cavity, a crystal growth crucible and a high pressure cavity filled with raw materials;

[0006] A crystal growth crucible is arranged in the high-temperature and high-pressure cavity, a raw material preheating tube is arranged above the crystal growth crucible, and the high-temperature and high-pressure cavity is arranged in a heating unit;

[0007] A raw material delivery pipeline is provided between the high-pressure cavity containing the raw material and the high-temperature and high-pressure cavity;

[0008] The pressure in the high-pressure chamber and the high-temperature and high-pressure chamber is adjusted by the pressure balance adjustment system, so that the raw materials in the high-pressure chamber can be continuously added to the high-temperature and high-pressure chamber.

[0009] Furthermore, the high-pressure cavity and the high-temperature and high-pressure cavity are connected to a high-pressure gas source.

[0010] Further, the pressure balance regulation system includes a feeding gas circuit pressure regulating device, a feeding gas circuit pressure monitoring unit, a single crystal growth gas circuit pressure regulating device and a single crystal growth gas circuit pressure monitoring unit;

[0011] The feeding gas circuit pressure regulating device and the feeding gas circuit pressure monitoring unit are arranged between the high-pressure gas source and the high-temperature and high-pressure cavity;

[0012] The single crystal growth gas path pressure regulating device and the single crystal growth gas path pressure monitoring unit are arranged between the high pressure gas source and the high pressure cavity.

[0013] Furthermore, an air inlet pipe connected to a high-pressure gas source is provided in the high-temperature and high-pressure cavity.

[0014] Furthermore, a discharge pipe and an air inlet pipe are provided in the high-pressure chamber. The discharge pipe is connected to the raw material conveying pipeline, and the air inlet pipe is connected to the high-pressure gas source.

[0015] Furthermore, the upper part of the high-pressure cavity is a raw material cavity, the lower part is a raw material area, the bottom end of the discharge pipe extends into the raw material area, and the bottom end of the air inlet pipe is located in the raw material cavity.

[0016] Furthermore, the raw material conveying pipeline includes a raw material conveying pipe and a heating and heat preservation unit arranged outside the raw material conveying pipe.

[0017] Furthermore, the raw material preheating tube is S-shaped.

[0018] A continuous feeding method for growing gallium nitride single crystal by flux method comprises the following steps:

[0019] The raw materials required for the growth of gallium nitride single crystals are loaded into the single crystal growth crucible, the raw materials to be supplemented are added into the high-pressure cavity, and the raw material delivery pipeline, the high-pressure cavity and the high-temperature and high-pressure cavity are preheated to make the raw materials in a liquid state, and the pressures in the high-pressure cavity and the high-temperature and high-pressure cavity are the same, and the single crystal is started to grow;

[0020] Then, a pressure balance adjustment system is used to form a pressure difference between the high-pressure cavity and the high-temperature and high-pressure cavity, and the raw materials to be replenished are continuously transported to the high-temperature and high-pressure cavity through the raw material preheating tube to achieve continuous growth of the crystal.

[0021] Furthermore, the temperature of the single crystal growth is 700-900°C, the pressure is 3-4MPa, and the pressure difference is 0.1-1MPa.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] In the present invention, a single crystal growth chamber and a raw material chamber are provided, and according to the consumption of raw materials in the single crystal growth chamber, a pressure balance adjustment system is used to dynamically adjust the gas pressure difference between the single crystal growth chamber and the raw material chamber, so as to realize the replenishment of gas raw materials and the addition of liquid raw materials required for single crystal growth, thereby realizing continuous development of crystals and facilitating the growth of large-sized gallium nitride single crystals.

[0024] Furthermore, an S-shaped raw material preheating tube is used and installed in the single crystal growth chamber, so that the liquid raw material is under temperature and pressure conditions similar to those in the single crystal growth zone, reducing the disturbance caused by the liquid raw material entering the single crystal growth zone and ensuring the stability of the single crystal growth conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic diagram of a continuous feeding device for growing gallium nitride single crystals using a flux method according to the present invention;

[0026] Figure 2 The X-ray diffraction pattern of the single crystal material grown in Example 2;

[0027] Description of reference numerals:

[0028] 1-single crystal growth chamber; 2-raw material preheating tube; 3-raw material chamber; 4-raw material conveying pipeline; 5-high-pressure gas source; 6-pressure balance adjustment system; 7-high-temperature and high-pressure chamber; 8-crystal growth crucible; 9-single crystal growth zone; 10-heating element; 11-insulation layer; 12-inlet pipe; 13-inlet pipe joint; 14-feed pipe joint; 15-high-pressure chamber; 16-heating and insulation layer; 17-raw material zone; 18-discharge pipe; 19-inlet pipe; 20-discharge pipe joint; 21-inlet joint; 22-raw material conveying pipe; 23-heating and insulation unit; 24-single crystal growth gas path pressure regulating device; 25-single crystal growth gas path pressure monitoring unit; 26-feeding gas path pressure regulating device; 27-feeding gas path pressure monitoring unit. DETAILED DESCRIPTION

[0029] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thoroughly and comprehensively understood.

[0030] The core of the present invention is to address the problem that the amount of raw materials is fixed during the traditional flux method for growing gallium nitride single crystals, thereby limiting the crystal growth size. A device and method are provided for achieving continuous addition of raw materials by dynamically adjusting and controlling the pressure difference in a high-temperature and high-pressure closed cavity.

[0031] Example 1

[0032] The continuous feeding device for growing gallium nitride single crystal by flux method of the present invention is as follows: Figure 1 As shown, it includes a single crystal growth chamber 1, a raw material preheating tube 2, a raw material chamber 3, a raw material conveying pipeline 4, a high-pressure gas source 5, a pressure balance adjustment system 6, a high-temperature and high-pressure chamber 7, a crystal growth crucible 8, a single crystal growth area 9, a high-pressure chamber 15, a single crystal growth gas path pressure regulating device 24, a single crystal growth gas path pressure monitoring unit 25, a feeding gas path pressure regulating device 26 and a feeding gas path pressure monitoring unit 27.

[0033] The pressure balance regulating system 6 is used to adjust the pressure difference between the single crystal growth gas path and the feeding gas path, and includes a feeding gas path pressure regulating device 26, a feeding gas path pressure monitoring unit 27, a single crystal growth gas path pressure regulating device 24, and a single crystal growth gas path pressure monitoring unit 25. The pressure balance regulating system 6 dynamically adjusts the gas pressure entering the single crystal growth chamber 1 and the raw material chamber 3, and utilizes the pressure difference between the single crystal growth chamber 1 and the raw material chamber 3 to allow the raw material to enter the raw material preheating tube 2 through the raw material delivery pipeline 4, thereby achieving continuous feeding during the crystal growth process.

[0034] The crystal growth crucible 8 contains a single crystal growth zone 9, and raw materials are added to the crystal growth crucible 8. The crystal growth crucible 8 is placed in a high-temperature and high-pressure cavity 7. An air inlet pipe 12 and a raw material preheating tube 2 are connected in the high-temperature and high-pressure cavity 7. An air inlet pipe joint 13 and a feed pipe joint 14 are provided at the top of the crystal growth crucible 8. The air inlet pipe 12 is connected to the air inlet pipe joint 13. The raw material preheating tube 2 is connected to the feed pipe joint 14 to seal the high-temperature and high-pressure cavity 7. Among them, the raw material preheating tube 2 is S-shaped. The raw material enters the S-shaped raw material preheating tube 2 through the feed pipe joint 14. During the crystal growth process, the raw material in the raw material preheating tube 2 is close to the liquid surface temperature of the single crystal growth zone 9.

[0035] The raw material chamber 3 includes a high-pressure chamber 15, and raw materials are added into the high-pressure chamber 15. A discharge pipe 18 and an air inlet pipe 19 are provided in the high-pressure chamber 15, and a discharge pipe joint 20 and an air inlet pipe joint 21 are provided at the top of the high-pressure chamber 15, and the discharge pipe 18 is connected to the discharge pipe joint 20. The air inlet pipe 19 is connected to the air inlet pipe joint 21 to seal the high-pressure chamber 15. The gas in the high-pressure chamber 15 is nitrogen and a mixed gas thereof with argon, and its pressure exceeds the pressure required for the growth of gallium nitride single crystals to provide a pressure difference in the automatic filling process.

[0036] A raw material delivery pipeline 4 is provided between the high-pressure chamber 15 and the high-temperature and high-pressure chamber 7. The raw material delivery pipeline 4 includes a raw material delivery pipe 22 and a heating and heat preservation unit 23 provided outside the raw material delivery pipe 22, and the heating and heat preservation unit 23 is installed on the raw material delivery pipe 22. One end of the raw material delivery pipe 22 is connected to the discharge pipe joint 20 of the high-pressure chamber 15, and the other end is connected to the feed pipe joint 14 of the single crystal growth chamber 1. The raw material delivery pipeline 4 is used to ensure that the raw material remains in a liquid state during the delivery process.

[0037] The high-pressure gas source 5 provides the single crystal growth chamber 1 and the raw material chamber 2 with growth raw material gas having a pressure higher than the operating pressure.

[0038] The lower part of the high-pressure cavity 15 is a raw material area 17 , the bottom end of the discharge pipe 18 extends into the raw material area 17 , and the bottom end of the air inlet pipe 19 is located above the raw material area 17 .

[0039] The outlet of the high-pressure gas source 5 is divided into two paths, one of which is connected to the air inlet pipe joint 13 of the single crystal growth chamber 1 through the single crystal growth gas path pressure regulating device 24 and the single crystal growth gas path pressure monitoring unit 25. The other outlet of the high-pressure gas source 5 is connected to the air inlet joint 21 of the high-pressure chamber 15 through the feeding gas path pressure regulating device 26 and the feeding gas path pressure monitoring unit 27.

[0040] The closed high-temperature and high-pressure cavity 7 is placed in a heating unit composed of a heating element 10 and a heat-insulating layer 11 , wherein the heating element 10 is arranged in the heat-insulating layer 11 . The closed high-pressure cavity 15 is placed in a heating and heat-insulating layer 16 .

[0041] In the early stage of single crystal growth, the single crystal growth chamber 1, the high pressure chamber 15 and the raw material delivery pipeline 4 are preheated to make the raw material in liquid state. A pressure difference is formed between the single crystal growth chamber 1 and the high pressure chamber 15 through the pressure balance adjustment system 6 to deliver the raw material to the raw material preheating pipe 2.

[0042] During the single crystal growth process, the single crystal growth chamber 1 is heated and its internal pressure increases. At the same time, the high pressure chamber 15 is kept warm, and the pressure in the raw material chamber 3 is adjusted by the pressure balance adjustment system 6 to keep the raw material in the raw material preheating tube 2 stable. As the raw material in the single crystal growth chamber 1 is consumed, the raw material in the raw material preheating tube 2 is regulated to flow into the single crystal growth zone 9 until the single crystal growth is completed.

[0043] Example 2

[0044] The raw materials in the present invention are metal Ga and alloys of metal Ga and group III elements or Fe, Mg, Mn, Ca, and Sc elements.

[0045] The flux is metallic Na, and alloys of Na with group I and group II elements.

[0046] Embodiment 2 of the present invention is described by taking Ga-Na alloy as an example.

[0047] Based on the continuous feeding device for growing gallium nitride single crystal by flux method in Example 1, a continuous feeding method for growing gallium nitride single crystal by flux method comprises the following steps:

[0048] A Ga-Na alloy (i.e., the raw material required for the growth of gallium nitride single crystal) of a specific ratio is loaded into the single crystal growth zone 9 in the single crystal growth crucible 8. The single crystal growth crucible 8 is placed in the single crystal growth high temperature and high pressure chamber 7 and sealed. The single crystal growth high temperature and high pressure chamber 7 is placed in a heating unit composed of a heating element 10 and a heat preservation layer 11.

[0049] Metal Ga (i.e., the raw material alloy required for continuous feeding) is loaded into the raw material area 17 in the high-pressure chamber 15. The high-pressure chamber 15 is sealed. The high-pressure chamber 15 is placed in a heating and heat-insulating layer 16.

[0050] Start the heating unit composed of the heating element 10 and the insulation layer 11, the heating and insulation unit 23 of the raw material conveying pipeline 4, and the heating and insulation layer 16 for preheating to make the temperature reach the target temperature in the range of 30 to 40°C, and keep the temperature to make the Ga-Na alloy in liquid state.

[0051] The heating and heat preservation unit 23 of the raw material conveying pipeline 4 is started to make the raw material conveying pipeline 22 reach the target temperature.

[0052] High-pressure nitrogen is injected into the single crystal growth chamber 1 and the raw material chamber 3 through the pressure balance adjustment system 6 for pre-pressurization, and the pressure P reaches the target pressure in the range of 1 to 2 MPa. On the basis of the pressure P, the pressure of the raw material chamber 3 is increased by 0.5 to 1 MPa, so that the liquid Ga in the high-pressure chamber 15 is injected into the raw material preheating tube 2 through the raw material delivery pipeline 4.

[0053] The temperature of the single crystal growth chamber 1 is increased, and the single crystal growth temperature control program is started. When the single crystal growth temperature reaches the target temperature in the range of 700-900°C, the pressure in the single crystal growth chamber 1 is increased to the target pressure in the range of 3-4MPa. The pressure of the raw material chamber 3 is increased to balance the pressure of the single crystal growth chamber 1 through the pressure balance adjustment system 6, and crystal growth is started. At the same time, the gas pressure of the raw material chamber 3 is controlled to be consistent with the gas pressure of the single crystal growth chamber 1, so that the raw material in the raw material preheating tube 2 remains stable.

[0054] During the single crystal growth process, the pressure in the single crystal growth chamber 1 decreases due to the consumption of nitrogen in the single crystal growth chamber 1. By increasing the pressure in the raw material chamber 3, the metal Ga in the raw material preheating tube 2 flows into the single crystal growth zone 9, thereby achieving continuous growth of the crystal until the single crystal growth is completed.

[0055] See also Figure 2From the X-ray diffraction pattern of the single crystal material grown in Example 2, it can be seen that the crystal orientation of the material is consistent and it is a single crystal.

[0056] Example 3

[0057] In the present invention, Na-Li-Ca is used as a flux and Ga is used as a raw material for explanation.

[0058] Based on the continuous feeding device for growing gallium nitride single crystal by flux method in Example 1, a continuous feeding method for growing gallium nitride single crystal by flux method comprises the following steps:

[0059] The Na-Li-Ca and Ga alloy is loaded into the single crystal growth zone 9 in the single crystal growth crucible 8. The single crystal growth crucible 8 is placed in the single crystal growth high temperature and high pressure chamber 7 and sealed. The single crystal growth high temperature and high pressure chamber 7 is placed in a heating unit composed of a heating element 10 and a heat preservation layer 11.

[0060] The Ga alloy (i.e., the raw material alloy required for continuous feeding) is loaded into the raw material area 17 in the high-pressure chamber 15. The high-pressure chamber 15 is sealed. The high-pressure chamber 15 is placed in a heating and heat-insulating layer 16.

[0061] Start the heating unit composed of the heating element 10 and the insulation layer 11, the heating and insulation unit 23 of the raw material conveying pipeline 4, and the heating and insulation layer 16 for preheating to make the temperature reach the target temperature in the range of 30 to 40°C, and keep the temperature to make the Ga alloy in liquid state.

[0062] The heating and heat preservation unit 23 of the raw material conveying pipeline 4 is started to make the raw material conveying pipeline 22 reach the target temperature.

[0063] High-pressure nitrogen is injected into the single crystal growth chamber 1 and the raw material chamber 3 through the pressure balance adjustment system 6 for pre-pressurization, and the pressure P reaches the target pressure in the range of 1 to 2 MPa. On the basis of the pressure P, the pressure of the raw material chamber 3 is increased by 0.5 to 1 MPa, so that the liquid Ga in the high-pressure chamber 15 is injected into the raw material preheating tube 2 through the raw material delivery pipeline 4.

[0064] The temperature of the single crystal growth chamber 1 is increased, and the single crystal growth temperature control program is started. When the single crystal growth temperature reaches the target temperature in the range of 700-900°C, the pressure in the single crystal growth chamber 1 is increased to the target pressure in the range of 3-4MPa. The pressure of the raw material chamber 3 is increased to balance the pressure of the single crystal growth chamber 1 through the pressure balance adjustment system 6, and crystal growth is started. At the same time, the gas pressure of the raw material chamber 3 is controlled to be consistent with the gas pressure of the single crystal growth chamber 1, so that the raw material in the raw material preheating tube 2 remains stable.

[0065] During the single crystal growth process, the pressure in the single crystal growth chamber 1 decreases due to the consumption of nitrogen in the single crystal growth chamber 1. By increasing the pressure in the raw material chamber 3, the metal Ga in the raw material preheating tube 2 flows into the single crystal growth zone 9, thereby achieving continuous growth of the crystal until the single crystal growth is completed.

[0066] In the present invention, a crystal growth chamber and a raw material chamber are provided, and the pressure balance control system is used to adjust the pressure balance between the crystal growth chamber and the raw material chamber, so that the raw material flows from the raw material chamber through the conveying pipe into the S-shaped preheating tube in the crystal growth chamber for preheating. At the same time, according to the consumption of raw materials during the crystal growth process, the pressure of the raw material chamber is adjusted so that the raw materials in the S-shaped preheating tube flow into the crucible in the single crystal growth chamber at a certain rate. By replenishing the raw materials, the single crystal is promoted to grow continuously, and then a large-sized gallium nitride single crystal is obtained.

[0067] The above description is only for the best embodiment of the present invention, but it should not be understood as limiting the claims. The present invention is not limited to the above embodiments, and its specific structure is allowed to be changed. However, all changes made within the protection scope of the independent claims of the present invention are within the protection scope of the present invention.

[0068] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

Claims

1. A continuous feeding device for growing gallium nitride single crystal by flux method, characterized in that: It comprises a pressure balance regulating system (6), a high-temperature and high-pressure chamber (7), a crystal growth crucible (8), and a high-pressure chamber (15) filled with raw materials; A crystal growth crucible (8) is arranged in the high-temperature and high-pressure cavity (7), a raw material preheating tube (2) is arranged above the crystal growth crucible (8), and the high-temperature and high-pressure cavity (7) is arranged in a heating unit; A raw material delivery pipeline (4) is provided between the high-pressure cavity (15) containing the raw material and the high-temperature and high-pressure cavity (7); The pressure in the high-pressure chamber (15) and the high-temperature and high-pressure chamber (7) is adjusted by the pressure balance adjustment system (6), thereby achieving continuous addition of the raw materials in the high-pressure chamber (15) into the high-temperature and high-pressure chamber (7).

2. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 1, characterized in that: The high-pressure cavity (15) is connected to the high-temperature and high-pressure cavity (7) via a high-pressure gas source (5).

3. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 2, characterized in that: The pressure balance regulating system (6) comprises a feeding gas circuit pressure regulating device (26), a feeding gas circuit pressure monitoring unit (27), a single crystal growth gas circuit pressure regulating device (24) and a single crystal growth gas circuit pressure monitoring unit (25); A feeding gas circuit pressure regulating device (26) and a feeding gas circuit pressure monitoring unit (27) are arranged between the high-pressure gas source (5) and the high-temperature and high-pressure cavity (7); The single crystal growth gas path pressure regulating device (24) and the single crystal growth gas path pressure monitoring unit (25) are arranged between the high-pressure gas source (5) and the high-pressure cavity (15).

4. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 2, characterized in that: A connecting air inlet pipe (12) connected to the high-pressure air source (5) is arranged in the high-temperature and high-pressure cavity (7).

5. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 2, characterized in that: A discharge pipe (18) and an air inlet pipe (19) are arranged in the high-pressure cavity (15); the discharge pipe (18) is connected to the raw material conveying pipeline (4), and the air inlet pipe (19) is connected to the high-pressure gas source (5).

6. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 5, characterized in that: The upper part of the high-pressure cavity (15) is a raw material cavity (3), and the lower part is a raw material area (17). The bottom end of the discharge pipe (18) extends into the raw material area (17), and the bottom end of the air inlet pipe (19) is located in the raw material cavity (3).

7. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 1, characterized in that: The raw material conveying pipeline (4) comprises a raw material conveying pipe (22) and a heating and heat preservation unit (23) arranged outside the raw material conveying pipe (22).

8. The continuous feeding device for growing gallium nitride single crystal by flux method according to claim 1, characterized in that: The raw material preheating tube (2) is S-shaped.

9. A continuous feeding method for growing gallium nitride single crystal by flux method based on the device of claim 6, characterized in that: The following steps are involved: The raw materials required for the growth of gallium nitride single crystals are loaded into a single crystal growth crucible (8), the raw materials to be supplemented are added into the high-pressure chamber (15), and the raw material delivery pipeline (4), the high-pressure chamber (15) and the high-temperature and high-pressure chamber (7) are preheated to make the raw materials in a liquid state, and the pressures in the high-pressure chamber (15) and the high-temperature and high-pressure chamber (7) are the same, and the growth of the single crystal begins; Then, a pressure difference is formed between the high-pressure chamber (15) and the high-temperature and high-pressure chamber (7) through the pressure balance adjustment system (6), and the raw material to be replenished is continuously transported to the high-temperature and high-pressure chamber (7) through the raw material preheating pipe (2), thereby achieving continuous growth of crystals.

10. The continuous feeding method for growing gallium nitride single crystal by flux method according to the device of claim 9, characterized in that: The temperature for single crystal growth is 700-900°C, the pressure is 3-4MPa, and the pressure difference is 0.1-1MPa.

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