Photoelectric sensor for measuring light intensity and incident angle
By designing a structure combining trapezoidal grooves and the second plane in the photoelectric conversion area of the photoelectric sensor, planes of different angles are constructed, which solves the problem that existing photoelectric sensors cannot detect the light incident angle, and realizes accurate measurement of the light incident angle and reduces the cost volume.
Patent Information
- Application Number
- CN202411820794.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-11
- Publication Date
- 2025-03-11
AI Technical Summary
Existing photoelectric sensors can only detect light intensity and cannot effectively detect light incident angles, resulting in the need to use multiple sensors to form an array, which increases cost and volume.
A photoelectric sensor is designed, and its photoelectric conversion area adopts a structure combining a trapezoidal groove and a second plane to construct three planes of different angles. By calculating the electrical signals on the PN junction components corresponding to these planes, the incident angle of light can be obtained.
This design effectively reduces the volume and cost of the detection device, while achieving accurate measurement of the angle of light incident.
Smart Images
Figure CN119595099A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of sensors, and in particular to a photoelectric sensor for measuring light intensity and incident angle. Background Art
[0002] A photoelectric sensor is a sensor that converts light signals into electrical signals. It measures physical quantities or detects the existence, position, motion state, etc. of an object by detecting changes in light intensity, color, frequency and other characteristics. Photoelectric sensors have the advantages of fast response speed, high precision, and non-contact measurement, and are widely used in industrial automation, robotics, medical equipment, communications and other fields. Existing photoelectric sensors can generally only detect light intensity, but when it is necessary to detect the incident angle of light, a sensor array composed of multiple photoelectric sensors is required. The light incident angle information is obtained by calculating and analyzing the light intensity detected by each photoelectric sensor. This method will undoubtedly increase the cost and volume of the detection device. Therefore, a photoelectric sensor for measuring light intensity and incident angle is proposed. Summary of the invention
[0003] The object of the present invention is to provide a photoelectric sensor for measuring light intensity and incident angle to solve the problems raised in the above background technology.
[0004] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a photoelectric sensor for measuring light intensity and incident angle, comprising a substrate, a photoelectric conversion region is arranged on the substrate, the photoelectric conversion region comprises a trapezoidal groove and a second plane, and a plurality of trapezoidal grooves and the second plane are arranged at intervals, the trapezoidal grooves and the second plane are both arranged on the upper surface of the substrate, the trapezoidal groove is composed of a first plane, a first inclined plane and a second inclined plane, a first PN junction region is arranged at a position corresponding to the first plane on the substrate, a second PN junction region is arranged at a position corresponding to the first inclined plane on the substrate, a third PN junction region is arranged at a position corresponding to the second inclined plane on the substrate, a fourth PN junction region is arranged at a position corresponding to the second plane on the substrate, and PN junction components are arranged in the first PN junction region, the second PN junction region, the third PN junction region and the fourth PN junction region.
[0005] Preferably, the included angle between the first plane and the first inclined plane is 135°, and the included angle between the first plane and the second inclined plane is 45°.
[0006] Preferably, a shielding layer is provided on the upper surface of the substrate.
[0007] Preferably, a first isolation layer is fixedly connected to the lower surface of the substrate.
[0008] Preferably, isolation trenches are provided between the first PN junction region and the second PN junction region, between the second PN junction region and the third PN junction region, between the third PN junction region and the fourth PN junction region, and between the fourth PN junction region and the first PN junction region, and a second isolation layer is fixedly connected in the isolation trenches.
[0009] Preferably, the isolation groove has a depth of 70 μm and a width of 5 μm.
[0010] Preferably, the PN junction component includes a first doped region, a second doped region, a P-type semiconductor, an N-type semiconductor, a first electrode and a second electrode, and the first doped region and the second doped region are arranged in a substrate, the first doped region is provided with a P-type semiconductor, and the second doped region is provided with an N-type semiconductor.
[0011] Preferably, a first through groove is formed on the first isolation layer at a position corresponding to the P-type semiconductor, and a second through groove is formed on the first isolation layer at a position corresponding to the N-type semiconductor.
[0012] Preferably, a first electrode is fixedly connected in the first through groove, and the first electrode is fixedly connected to the P-type semiconductor, and a second electrode is fixedly connected in the second through groove, and the second electrode is fixedly connected to the N-type semiconductor.
[0013] Preferably, the P-type semiconductor has a width of 110 μm and a thickness of 0.6 μm, and the N-type semiconductor has a width of 10 μm and a thickness of 0.6 μm.
[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention designs the light incident surface of the photoelectric conversion zone as a trapezoidal groove combined with a second plane, thereby constructing three planes with different angles. Since the projection areas of the three planes with different angles perpendicular to the light path are different, the electrical signals on the PN junction components corresponding to the planes are also different. The incident angle of the light can be obtained by calculating and analyzing these electrical signals. This design can effectively reduce the volume and cost of the detection device. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a schematic diagram of the overall three-dimensional structure of the present invention;
[0016] Figure 2 It is a schematic diagram of the main cutaway structure of the photoelectric conversion region of the present invention;
[0017] Figure 3 This is a schematic diagram of the main cutaway structure of the first isolation layer of the present invention;
[0018] Figure 4 It is a schematic diagram of the three-dimensional structure of the trapezoidal groove of the present invention;
[0019] Figure 5This is a simulation diagram of the photoelectric conversion area when light is incident vertically;
[0020] Figure 6 Schematic diagram of the bottom current density when the light is incident vertically;
[0021] Figure 7 It is a schematic diagram of the current density in the middle when the light is incident vertically;
[0022] Figure 8 This is a simulation diagram of light incident on the photoelectric conversion area from the left;
[0023] Fig. 9 It is a schematic diagram of the bottom current density when light is incident from the left;
[0024] Fig.10 It is a schematic diagram of the current density in the middle when the light is incident from the left;
[0025] Fig.11 This is a simulation diagram of light incident on the photoelectric conversion area from the right;
[0026] Fig.12 This is a schematic diagram of the bottom current density when light is incident from the right;
[0027] Fig.13 Schematic diagram of the current density in the middle when light is incident from the right.
[0028] In the figure: 1, substrate; 2, photoelectric conversion region; 21, trapezoidal groove; 2101, first plane; 2102, first inclined plane; 2103, second inclined plane; 22, second plane; 23, shielding layer; 24, first isolation layer; 2401, first through groove; 2402, second through groove; 25, first PN junction region; 26, second PN junction region; 27, third PN junction region; 28, fourth PN junction region; 29, PN junction component; 291, first doped region; 292, second doped region; 293, P-type semiconductor; 294, N-type semiconductor; 295, first electrode; 296, second electrode; 210, isolation groove; 211, second isolation layer. DETAILED DESCRIPTION
[0029] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0030] Please see attached Figure 1 -Attached Fig.13An embodiment of the present invention provides: a photoelectric sensor for measuring light intensity and incident angle, comprising a substrate 1, a photoelectric conversion region 2 is arranged on the substrate 1, the photoelectric conversion region 2 comprises a trapezoidal groove 21 and a second plane 22, and a plurality of trapezoidal grooves 21 and the second plane 22 are arranged at intervals, the trapezoidal grooves 21 and the second plane 22 are both arranged on the upper surface of the substrate 1, the trapezoidal groove 21 is composed of a first plane 2101, a first inclined surface 2102 and a second inclined surface 2103, a first PN junction region 25 is arranged at a position corresponding to the first plane 2101 on the substrate 1, a second PN junction region 26 is arranged at a position corresponding to the first inclined surface 2102 on the substrate 1, and a third PN junction region is arranged at a position corresponding to the second inclined surface 2103 on the substrate 1 27, a fourth PN junction region 28 is provided at a position corresponding to the second plane 22 on the substrate 1, and a PN junction assembly 29 is provided in the first PN junction region 25, the second PN junction region 26, the third PN junction region 27 and the fourth PN junction region 28, the photoelectric conversion region 2 is the irradiation area of the light, the light incident surface is a trapezoidal groove 21 combined with the second plane 22 to form three planes with different angles for calculating the light incident angle, the first PN junction region 25, the second PN junction region 26, the third PN junction region 27 and the fourth PN junction region 28 are all used to accommodate the PN junction assembly 29, and the PN junction assembly 29 is used to realize photoelectric conversion; the angle between the first plane 2101 and the first inclined plane 2102 is 135°, the first inclined plane 2102 is 135°, and the second inclined plane 2102 is 135°. The angle between the first plane 2101 and the second inclined plane 2103 is 45°; a shielding layer 23 is provided on the upper surface of the substrate 1; a first isolation layer 24 is fixedly connected to the lower surface of the substrate 1; an isolation groove 210 is provided between the first PN junction region 25 and the second PN junction region 26, between the second PN junction region 26 and the third PN junction region 27, between the third PN junction region 27 and the fourth PN junction region 28, and between the fourth PN junction region 28 and the first PN junction region 25, and a second isolation layer 211 is fixedly connected in the isolation groove 210, and the isolation groove 210 is used to accommodate the second isolation layer 211, and the second isolation layer 211 is used to separate the first PN junction region 25, the second PN junction region 26, and the third PN junction region on the substrate 1. The isolation groove 210 has a depth of 70 μm and a width of 5 μm. The PN junction component 29 includes a first doped region 291, a second doped region 292, a P-type semiconductor 293, an N-type semiconductor 294, a first electrode 295 and a second electrode 296. The first doped region 291 and the second doped region 292 are arranged in the substrate 1. The P-type semiconductor 293 is arranged in the first doped region 291, and the N-type semiconductor 294 is arranged in the second doped region 292. The first doped region 291 is used to dope boron ions to form the P-type semiconductor 293, and the second doped region 292 is used to dope phosphorus ions to form the N-type semiconductor 294. The P-type semiconductor 293 is combined with the N-type semiconductor 294 to achieve photoelectric conversion.A first through groove 2401 is provided at a position corresponding to the P-type semiconductor 293 on the first isolation layer 24, and a second through groove 2402 is provided at a position corresponding to the N-type semiconductor 294 on the first isolation layer 24; a first electrode 295 is fixedly connected in the first through groove 2401, and the first electrode 295 is fixedly connected to the P-type semiconductor 293, a second electrode 296 is fixedly connected in the second through groove 2402, and the second electrode 296 is fixedly connected to the N-type semiconductor 294, the first through groove 2401 is used to accommodate the first electrode 295, and the second through groove 2402 is used to accommodate the second electrode 296, the first electrode 295 is a negative electrode, and the second electrode 296 is a positive electrode; the width of the P-type semiconductor 293 is 110 μm, and the thickness is 0.6 μm, and the width of the N-type semiconductor 294 is 10 μm, and the thickness is 0.6 μm. ;
[0031] Working principle: When using the present invention, sunlight irradiates the photoelectric conversion area 2 of the substrate 1 and enters through the shielding layer 23. The PN junction component 29 receives the sunlight to generate photogenerated carriers. The light intensity can be measured according to the signal of the photogenerated current. Since the sunlight incident surface is composed of a trapezoidal groove 21 combined with a second plane 22, when the incident light angle changes, the projection areas of the three planes at different angles perpendicular to the light path will be different. According to the electrical signals on the PN junction component 29 under the three angle planes, the incident angle of the light can be determined; wherein the trapezoidal groove 21 is composed of a first plane 2101, a first inclined plane 2102, and a second inclined plane 2103. 103, the isolation groove 210 is used to accommodate the second isolation layer 211, the second isolation layer 211 is used to separate the first PN junction region 25, the second PN junction region 26, the third PN junction region 27 and the fourth PN junction region 28 on the substrate 1, the first doping region 291 is used to dope boron ions to form a P-type semiconductor 293, the second doping region 292 is used to dope phosphorus ions to form an N-type semiconductor 294, the first through groove 2401 is used to accommodate the first electrode 295, the second through groove 2402 is used to accommodate the second electrode 296, and the first isolation layer 24 is used to isolate the substrate 1, the first electrode 295 and the second electrode 296.
[0032] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.
Claims
1. A photoelectric sensor for measuring light intensity and incident angle, comprising a substrate (1), characterized in that: The substrate (1) is provided with a photoelectric conversion region (2), the photoelectric conversion region (2) comprising a trapezoidal groove (21) and a second plane (22), and a plurality of trapezoidal grooves (21) and second planes (22) are arranged at intervals, the trapezoidal grooves (21) and second planes (22) are both arranged on the upper surface of the substrate (1), the trapezoidal groove (21) is composed of a first plane (2101), a first inclined plane (2102) and a second inclined plane (2103), and a first PN junction region (2103) is arranged at a position on the substrate (1) corresponding to the first plane (2101). 25), a second PN junction region (26) is arranged at a position on the substrate (1) corresponding to the first inclined surface (2102), a third PN junction region (27) is arranged at a position on the substrate (1) corresponding to the second inclined surface (2103), a fourth PN junction region (28) is arranged at a position on the substrate (1) corresponding to the second plane (22), and a PN junction component (29) is arranged in each of the first PN junction region (25), the second PN junction region (26), the third PN junction region (27) and the fourth PN junction region (28).
2. A photoelectric sensor for measuring light intensity and incident angle according to claim 1, characterized in that: The included angle between the first plane (2101) and the first inclined plane (2102) is 135°, and the included angle between the first plane (2101) and the second inclined plane (2103) is 45°.
3. A photoelectric sensor for measuring light intensity and incident angle according to claim 1, characterized in that: A shielding layer (23) is provided on the upper surface of the substrate (1).
4. A photoelectric sensor for measuring light intensity and incident angle according to claim 3, characterized in that: A first isolation layer (24) is fixedly connected to the lower surface of the substrate (1).
5. The photoelectric sensor for measuring light intensity and incident angle according to claim 1, characterized in that: An isolation groove (210) is provided between the first PN junction region (25) and the second PN junction region (26), between the second PN junction region (26) and the third PN junction region (27), between the third PN junction region (27) and the fourth PN junction region (28), and between the fourth PN junction region (28) and the first PN junction region (25), and a second isolation layer (211) is fixedly connected in the isolation groove (210).
6. A photoelectric sensor for measuring light intensity and incident angle according to claim 5, characterized in that: The isolation groove (210) has a depth of 70 μm and a width of 5 μm.
7. A photoelectric sensor for measuring light intensity and incident angle according to claim 1, characterized in that: The PN junction component (29) comprises a first doping region (291), a second doping region (292), a P-type semiconductor (293), an N-type semiconductor (294), a first electrode (295) and a second electrode (296), wherein the first doping region (291) and the second doping region (292) are arranged in a substrate (1), the P-type semiconductor (293) is arranged in the first doping region (291), and the N-type semiconductor (294) is arranged in the second doping region (292).
8. A photoelectric sensor for measuring light intensity and incident angle according to claim 4, characterized in that: A first through groove (2401) is provided on the first isolation layer (24) at a position corresponding to the P-type semiconductor (293), and a second through groove (2402) is provided on the first isolation layer (24) at a position corresponding to the N-type semiconductor (294).
9. A photoelectric sensor for measuring light intensity and incident angle according to claim 8, characterized in that: A first electrode (295) is fixedly connected in the first through groove (2401), and the first electrode (295) is fixedly connected to the P-type semiconductor (293); a second electrode (296) is fixedly connected in the second through groove (2402), and the second electrode (296) is fixedly connected to the N-type semiconductor (294).
10. A photoelectric sensor for measuring light intensity and incident angle according to claim 9, characterized in that: The width of the P-type semiconductor (293) is 110 μm and the thickness is 0.6 μm, and the width of the N-type semiconductor (294) is 10 μm and the thickness is 0.6 μm.