Microfluidic heat dissipation device and manufacturing method thereof

Abstract

The embodiment of the invention provides a microfluidic heat dissipation device and a manufacturing method thereof. The micro-fluidic heat dissipation device comprises a substrate, a heat dissipation layer and a heat dissipation layer, the first communication structure is located in the base plate, and the first communication structure comprises a first flow channel, a second flow channel and a first cavity communicating with the first flow channel and the second flow channel; the second communication structure is located in the substrate and is isolated from the first communication structure; the second communicating structure comprises a third flow channel, a fourth flow channel and a second cavity communicating with the third flow channel and the fourth flow channel; the first joint and the second joint are positioned on one side of the substrate in the thickness direction of the substrate; the first joint is communicated with the first flow channel, and the second joint is communicated with the fourth flow channel; the second flow channel is communicated with a first port of a device to be cooled; and the third flow channel is communicated with the second port of the device to be cooled.

Description

Technical Field

[0001] The present disclosure relates to the technical field of microchannel liquid cooling and heat dissipation, and in particular, to a microfluidic heat dissipation device and a manufacturing method thereof. Background Art

[0002] As the integration of electronic devices continues to increase, the computing speed gradually increases, and the size continues to shrink, the number of electronic components integrated per unit area continues to increase, and the heat generated also increases, resulting in an increase in the heat flux density of electronic devices. In addition, the performance and life of electronic devices are closely related to their temperature. Therefore, the temperature control of electronic devices is very prominent, and the heat dissipation capacity of electronic devices is particularly important.

[0003] In practical applications, with the development of microfluidic technology, coolant can be directly delivered to the inside of electrical devices, thereby achieving more efficient cooling to solve the heat dissipation problem of electrical devices. However, in the application of microfluidic technology, there are still many problems that need to be solved. Summary of the invention

[0004] In view of this, according to one aspect of the present disclosure, a microfluidic heat dissipation device is provided, comprising: a substrate; a first connecting structure, located in the substrate, the first connecting structure comprising a first flow channel, a second flow channel and a first cavity connected to the first flow channel and the second flow channel; a second connecting structure, located in the substrate, isolated from the first connecting structure; the second connecting structure comprising a third flow channel, a fourth flow channel and a second cavity connected to the third flow channel and the fourth flow channel; a first joint and a second joint, located on one side of the substrate in its thickness direction; the first joint is connected to the first flow channel, and the second joint is connected to the fourth flow channel; wherein the second flow channel is connected to the first port of the device to be cooled; and the third flow channel is connected to the second port of the device to be cooled.

[0005] In some embodiments, the projection shape of the first connecting structure on the first plane includes L-shape or T-shape; and / or the projection shape of the second connecting structure on the first plane includes L-shape or T-shape; the first plane is parallel to the surface of the substrate.

[0006] In some embodiments, the microfluidic heat dissipation device also includes: a first wiring layer, covering the first surface of the substrate; the first joint and the second joint are located on the side of the first wiring layer away from the substrate; wherein the first wiring layer is provided with a first channel, a second channel, a third channel and a fourth channel that penetrate the first wiring layer and are arranged at intervals; the first channel is connected to the first flow channel; the second channel is connected to the second flow channel; the third channel is connected to the third flow channel; the fourth channel is connected to the fourth flow channel.

[0007] In some embodiments, the microfluidic heat dissipation device also includes: a second wiring layer, covering the second surface of the substrate; the second surface and the first surface are two opposite surfaces of the substrate in its thickness direction; and an interconnection structure, passing through the substrate; one end of the interconnection structure in the thickness direction is coupled to the first wiring layer; the other end of the interconnection structure in the thickness direction is coupled to the second wiring layer.

[0008] In some embodiments, the microfluidic heat dissipation device also includes: a first pad located on the side wall and a portion of the bottom surface of the first channel; a second pad located on the side wall of the second channel; a third pad located on the side wall of the third channel; and a fourth pad located on the side wall and a portion of the bottom surface of the fourth channel.

[0009] In some embodiments, the material of the substrate includes silicon or silicon oxide; the material of the first wiring layer and the second wiring layer includes copper; the material of the interconnect structure includes copper; and the material of the first connector and the second connector includes polyetheretherketone or copper.

[0010] In some embodiments, the width of the first flow channel in a direction perpendicular to the thickness direction is greater than the width of the second flow channel in a direction perpendicular to the thickness direction; and / or the width of the fourth flow channel in a direction perpendicular to the thickness direction is greater than the width of the third flow channel in a direction perpendicular to the thickness direction.

[0011] According to another aspect of the present disclosure, a method for manufacturing a microfluidic heat dissipation device is provided, the method comprising: forming a first cavity and a second cavity isolated from each other in a substrate; forming a first flow channel, a second flow channel, a third flow channel and a fourth flow channel arranged at intervals in the substrate; the first flow channel and the second flow channel are connected to the first cavity to form a first connecting structure; the third flow channel and the fourth flow channel are connected to the second cavity to form a second connecting structure; sealing a first joint and a second joint on one side of the substrate; the first joint is connected to the first flow channel, and the second joint is connected to the fourth flow channel; wherein the second flow channel is connected to a first port of a device to be cooled; and the third flow channel is connected to a second port of the device to be cooled.

[0012] In some embodiments, forming a mutually isolated first cavity and a second cavity in a substrate includes: providing a first sub-substrate, forming a mutually isolated first group of grooves and a second group of grooves in the first sub-substrate; providing a second sub-substrate, forming a mutually isolated third group of grooves and a fourth group of grooves in the second sub-substrate; bonding the first sub-substrate with the second sub-substrate to form the substrate; wherein the first group of grooves is connected with the third group of grooves to form the first cavity; and the second group of grooves is connected with the fourth group of grooves to form the second cavity.

[0013] In some embodiments, the method further includes: forming a first interconnection hole penetrating the substrate in a thickness direction of the substrate; and filling a conductive material in the first interconnection hole to form an interconnection structure.

[0014] In some embodiments, forming a mutually isolated first cavity and a second cavity in a substrate includes: providing an initial substrate, and determining a mutually isolated first preset area and a second preset area in the initial substrate; forming a first through hole array and a second through hole array in the initial substrate; the first through hole array extends to the first preset area in the thickness direction of the initial substrate, and the second through hole array extends to the second preset area in the thickness direction of the initial substrate; using the first through hole array to remove a portion of the initial substrate located in the first preset area to form a first cavity in the initial substrate; and using the second through hole array to remove a portion of the initial substrate located in the second preset area to form a second cavity in the initial substrate; and sealing the first through hole array and the second through hole array to form the substrate.

[0015] In some embodiments, the method further includes: forming a second interconnect hole penetrating the initial substrate in the thickness direction of the initial substrate during the process of forming the first through hole array and the second through hole array; and after forming the substrate, filling the second interconnect hole with a conductive material to form an interconnect structure.

[0016] In some embodiments, the method also includes: forming a first wiring layer on the first surface of the substrate; and forming a first channel, a second channel, a third channel and a fourth channel that penetrate the first wiring layer and are arranged at intervals; the first channel is connected to the first flow channel; the second channel is connected to the second flow channel; the third channel is connected to the third flow channel; the fourth channel is connected to the fourth flow channel.

[0017] In some embodiments, the method further includes: forming a second wiring layer on the second surface of the substrate; the second surface and the first surface are two opposite surfaces of the substrate in the thickness direction thereof; wherein the interconnect structure is coupled to the first wiring layer at one end in the thickness direction of the substrate; and the interconnect structure is coupled to the second wiring layer at the other end in the thickness direction of the substrate.

[0018] In some embodiments, the method further includes: forming a first liner on the sidewall and a portion of the bottom surface of the first channel; forming a second liner on the sidewall of the second channel; forming a third liner on the sidewall of the third channel; and forming a fourth liner on the sidewall and a portion of the bottom surface of the fourth channel.

[0019] In an embodiment of the present disclosure, a microfluidic heat dissipation device is provided, which includes a first connecting structure and a second connecting structure isolated from each other, the first connecting structure has a first flow channel and a second flow channel, and the second connecting structure has a third flow channel and a fourth flow channel, wherein the second flow channel of the microfluidic heat dissipation device is connected to the first port of the device to be dissipated, and the third flow channel of the microfluidic heat dissipation device is connected to the second port of the device to be dissipated, so that different ports of the device to be dissipated are connected to different connecting structures, so that the structural layout between the microfluidic heat dissipation device and the device to be dissipated is more matched and more reasonable, thereby enhancing the sealing of the two, and further improving the reliability of the connection between the two; further, the coolant can be passed into the first connecting structure through the first flow channel, and passed into the device to be dissipated through the second flow channel, and then, after the coolant is subjected to a temperature reduction treatment on the device to be dissipated, it is passed into the second connecting structure through the third flow channel, and then flows out through the fourth flow channel, so that the coolant can realize the circulation cooling of the device to be dissipated, thereby improving the heat dissipation performance and extending the service life of the device to be dissipated; furthermore, the microfluidic heat dissipation device provided by the present disclosure has a simple structure, is easy to operate, and is suitable for large-scale mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of the structure of a microfluidic heat dissipation device provided in one embodiment of the present disclosure;

[0021] Figure 2 A cross-sectional schematic diagram of a first connecting structure and a second connecting structure provided in an embodiment of the present disclosure;

[0022] Figure 3 A schematic top view of a first connecting structure and a second connecting structure provided in an embodiment of the present disclosure;

[0023] Figure 4 A schematic diagram of the dimensions of a first connecting structure and a second connecting structure provided in an embodiment of the present disclosure;

[0024] Figure 5A schematic diagram of a manufacturing method of a microfluidic heat dissipation device according to an embodiment of the present disclosure;

[0025] Figures 6 to 20 A schematic diagram of the manufacturing process of the microfluidic heat dissipation device provided in an embodiment of the present disclosure.

[0026] In the above drawings (which are not necessarily drawn to scale), similar reference numerals may describe similar components in different views. Similar reference numerals with different letter suffixes may represent different examples of similar components. The accompanying drawings generally illustrate various embodiments discussed herein by way of example and not limitation. DETAILED DESCRIPTION

[0027] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0028] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it is obvious to those skilled in the art that the present disclosure can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present disclosure, some technical features known in the art are not described; that is, all features of actual embodiments are not described here, and well-known functions and structures are not described in detail.

[0029] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0030] It should be understood that spatial relationship terms such as "under", "below", "below", "under", "above", "above", etc., may be used here for convenience of description to describe the relationship between an element or feature shown in the figure and other elements or features. It should be understood that in addition to the orientation shown in the figure, the spatial relationship terms are intended to also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is turned over, then the elements or features described as "under other elements" or "under it" or "under it" will be oriented as "on" other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0031] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0032] In order to enable a more detailed understanding of the features and technical contents of the embodiments of the present disclosure, the implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. The attached drawings are for reference only and are not used to limit the embodiments of the present disclosure.

[0033] Before introducing the above-mentioned microfluidic heat dissipation device in detail, various directions that may be used in the following description are defined first. In the present disclosure, the stacking direction of the microfluidic heat dissipation device and the device to be cooled is defined as a first direction (i.e., the Z-axis direction, i.e., the vertical direction). In a plane perpendicular to the Z-direction, an intersecting second direction (i.e., the X-axis direction) and a third direction (i.e., the Y-axis direction) are defined. In some embodiments, the X-axis direction, the Y-axis direction, and the Z-axis direction may be perpendicular to each other.

[0034] As the integration of electronic devices (such as chips) becomes higher and higher, the heat generated also increases. It is difficult to meet the demand for efficient heat dissipation through air cooling. Therefore, microfluidic liquid cooling technology has emerged. Microfluidic liquid cooling technology is a new type of heat dissipation solution. It introduces tiny channels and fine structures into the through-silicon via (TSV) adapter board or the inside of the chip, and can introduce coolant into the chip or its surrounding area to achieve rapid transfer and dissipation of the heat energy generated by the chip. In other words, heat dissipation technology can be used to pass liquid (usually water or special coolant) through the fine channels on the surface of the chip to take away the heat, thereby achieving heat dissipation on the surface of the chip. However, in this heat dissipation method, heat is usually dissipated on one side of the chip (such as the upper surface side), while the other side of the chip (such as the lower surface side) cannot effectively dissipate heat; in this way, the heat dissipation performance of the lower surface side of the chip becomes worse and worse, affecting the service life of the chip.

[0035] Based on one or more of the above problems, the present disclosure provides a microfluidic heat dissipation device, referring to Figure 1 , Figure 1A schematic diagram of the structure of a microfluidic heat dissipation device provided in an embodiment of the present disclosure; the microfluidic heat dissipation device 100 is connected to a device to be cooled 200, and the microfluidic heat dissipation device 100 is used to dissipate heat from the device to be cooled 200; wherein the microfluidic heat dissipation device 100 comprises: a substrate 101; a first connecting structure 102, located in the substrate 101, the first connecting structure 102 comprises a first flow channel 106, a second flow channel 107 and a first cavity 110 connected to the first flow channel and the second flow channel; a second connecting structure 103, located in the substrate 101, and connected to the first connecting structure 106; a second connecting structure 103, located in the substrate 101, and connected to the first connecting structure 106; a second connecting structure 103, located in the substrate 101, and connected to the first connecting structure 106; a first connecting structure 110, connected to the first connecting structure 110; a second connecting structure 110, located in the substrate 101, and connected to the first connecting structure 110; a first connecting structure 110, ... The structures 102 are isolated from each other; the second connecting structure 103 includes a third flow channel 108, a fourth flow channel 109 and a second cavity 111 connected to the third flow channel and the fourth flow channel; the first joint 104 and the second joint 105 are located on one side of the substrate 101 in its thickness direction; the first joint 104 is connected to the first flow channel 106, and the second joint 105 is connected to the fourth flow channel 109; wherein the second flow channel 107 is connected to the first port 203 of the device 200 to be cooled; the third flow channel 108 is connected to the second port 204 of the device 200 to be cooled.

[0036] refer to Figure 1 The heat dissipation device 200 may include a 3D integrated chip (3DIC) 201 and a microchannel structure 202 disposed on a first surface side of the 3DIC. The 3DIC 201 and the microchannel structure 202 are stacked and arranged in a vertical direction (ie, Z-axis direction).

[0037] Among them, 3DIC 201 may include multiple chips stacked in the Z-axis direction; the chips may include, for example, processor chips, storage chips, communication chips, driver chips, interactive chips, capacitor components, etc.; the chips may specifically include dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), flash memory (NAND), phase change memory (PCM), etc. It should be noted that 3DIC can improve performance, reduce size and improve energy efficiency by stacking multiple chips in the vertical direction, and 3DIC can be applied to multiple fields, such as high-performance computing, artificial intelligence, Internet of Things, cloud computing and other fields. In this way, by vertically stacking multiple chips, higher computing density and lower latency can be provided to meet the needs of these fields for high-performance computing and high storage density.

[0038] The microfluidic channel structure 202 may include a substrate and a transverse microfluidic channel and a longitudinal microfluidic channel ( Figure 1Not indicated in the figure); the transverse microchannel molding may include an S-shape or a zigzag shape; the longitudinal microchannel molding may include a straight line shape, and a plurality of longitudinal microchannels are arranged in an array-like interval. The microchannel structure 202 is provided with a first port 203 and a second port 204, and the first port 203 and the second port 204 are connected to the transverse microchannel and / or the longitudinal microchannel. In the present embodiment, the first port 203 is a liquid inlet, which is used to introduce a coolant, and the second port 204 is a liquid outlet, which is used to discharge the coolant. In other embodiments, the first port may also be a liquid outlet for discharging the coolant, and the second port may also be a liquid inlet for introducing the coolant; the present disclosure does not limit this. In this way, the microchannel structure 202 can allow the coolant to be introduced through the first port 203, and then discharge the coolant through the second port 204, so that the coolant takes away the heat on the first surface side of the 3DIC, thereby achieving heat dissipation of the 3DIC. In some embodiments, the cooling liquid may include water, a solution containing a magnetic fluid, an organic acid, or any other liquid suitable for cooling. In other embodiments, a gas for cooling may be introduced into the microchannel structure 202 through the first port 203; this is not limited in the present disclosure. In order to facilitate a clear understanding of the present disclosure, the cooling liquid is used as an example of the gas or liquid for cooling.

[0039] In the disclosed embodiment, the microfluidic structure 202 is located between the 3D integrated chip (3DIC) 201 and the microfluidic heat sink 100; the first port 203 of the microfluidic structure 202 is connected to the second channel 107 of the microfluidic heat sink, and the second port 204 of the microfluidic structure 202 is connected to the third channel 108 of the microfluidic heat sink 200. The specific operation of achieving the connection between the two may include: bonding the first port 203 to the second channel 107 and the second port 204 to the third channel 108 through a copper bonding process, and then sealing the connection between the port and the channel using a sealant 300 through an underfill process, so that not only a high-strength connection structure can be formed, but also the sealing between the port and the channel can be improved.

[0040] refer to Figure 1 The microfluidic heat dissipation device 100 further includes a first flow channel 106 and a fourth flow channel 109; wherein the first flow channel 106 and the second flow channel 107 are connected to the first cavity 110 to form a first connecting structure 102; the fourth flow channel 109 and the third flow channel 108 are connected to the second cavity 111 to form a second connecting structure 103. Figure 1 As shown, the first connecting structure 102 and the second connecting structure 103 are both located in the substrate 101 and are isolated from each other.

[0041] Here, the material of the substrate 101 includes silicon (Si) or silicon oxide (SiO 2); The shape of the substrate 101 may include a rectangle, a positive direction, a circle or a triangle. The substrate 101 may extend along the Z-axis direction, and the thickness of the substrate 101 in the Z-axis direction may be set according to actual needs. Exemplarily, the thickness of the substrate 101 in the Z-axis direction ranges from 4 mm to 10 mm, for example, 5 mm.

[0042] In the disclosed embodiment, the cooling liquid is introduced through the first flow channel 106, and after the cooling liquid enters the first cavity 110, it flows to the first port 203 of the microchannel structure 202 through the second flow channel 107. Next, the cooling liquid passes through the first port 203 to the lateral microchannel and / or the longitudinal microchannel to cool the 3DIC; then, it flows to the third flow channel 108 through the second port 204, enters the second cavity 111, and finally flows out through the fourth flow channel 109. In this process, the cooling liquid can also heat the 3DIC through the microchannel structure 202, thereby reducing the temperature of the 3DIC and extending the service life of the 3DIC.

[0043] In some embodiments, the cross-sectional shape of the first cavity 110 and the second cavity 111 on the XZ plane is a U-shaped structure. Exemplarily, the first cavity and the second cavity include a first portion A, a second portion B, and a third portion C located between the first portion A and the second portion B and connected to both the first portion A and the second portion B. In order to improve the adaptability of the cavity and the flow channel and increase the process window, the width of the first portion A in the X-axis direction and the width of the second portion B in the X-axis direction can be the same or different.

[0044] In some specific embodiments, in combination with reference Figure 1 and Figure 2 , the second portion B1 in the first cavity 110 is connected to the second flow channel 107, and the width L of the second portion B1 in the first cavity 110 in the X-axis direction B1 smaller than the width L of the first portion A1 in the first cavity 110 in the X-axis direction A1 , that is, L B1 <L A1 .

[0045] In some specific embodiments, in combination with reference Figure 1 and Figure 2 , the first portion A2 in the second cavity 111 is connected to the third flow channel 108, and the width L of the first portion A2 in the second cavity 111 in the X-axis direction A2 smaller than the width L of the second portion B2 in the second cavity 111 in the X-axis direction B2 , namely LA 2 <L B2 .

[0046] In the embodiment of the present disclosure, the width of the second portion B1 in the first cavity 110 in the X-axis direction and the width of the first portion A2 in the second cavity 111 in the X-axis direction are set to a smaller width. On the one hand, this is to improve the adaptability of the cavity and the flow channel. On the other hand, it is to increase the flow rate of the coolant and reduce the pressure to improve the cooling efficiency.

[0047] refer to Figure 1 The first connector 104 is connected to the first flow channel 106, and the second connector 105 is connected to the fourth flow channel 109. In this way, the first connector 104 and the second connector 105 can be connected to external devices to reduce the difficulty of introducing the coolant.

[0048] It should be noted that the first flow channel 106 and the second flow channel 107 are arranged on the same side of the first cavity 110 in the Z-axis direction (such as the side close to the device 200 to be cooled). In other embodiments, the first flow channel 106 and the second flow channel 107 can also be arranged on different sides of the first cavity 110 in the Z-axis direction (such as the second flow channel 107 is arranged on the side of the first cavity 110 close to the device 200 to be cooled, and the first flow channel 106 is arranged on the side of the first cavity 110 away from the device 200 to be cooled). Here, the first connector 104 needs to be connected and adapted to the first flow channel 106, so the first connector 104 can be arranged according to the position of the first flow channel 106.

[0049] Similarly, the third flow channel 108 and the fourth flow channel 109 are arranged on the same side of the second cavity 111 in the Z-axis direction (such as the side close to the device 200 to be cooled). In other embodiments, the third flow channel 108 and the fourth flow channel 109 can also be arranged on different sides of the second cavity 111 in the Z-axis direction (such as the fourth flow channel 109 is arranged on the side of the second cavity 111 close to the device 200 to be cooled, and the third flow channel 108 is arranged on the side of the second cavity 111 away from the device 200 to be cooled); here, the second connector 105 needs to be connected and adapted to the fourth flow channel 109, so the second connector 105 can be set according to the position of the fourth flow channel 109.

[0050] refer to Figure 1 The first joint 104, the second joint 105 and the device to be cooled 200 are all located on the same side of the microfluidic cooling device 100 in the Z-axis direction, the first joint 104, the second joint 105 and the device to be cooled 200 are arranged along the X-axis direction, and the device to be cooled 200 is located between the first joint 104 and the second joint 105. In this way, the process can be simplified and the overall size of the device can be saved.

[0051] The material of the first joint 104 and the second joint 105 may include but is not limited to polyetheretherketone (PEEK) material, copper, etc. The connection between the first joint and the first flow channel and the connection between the second joint and the fourth flow channel may be sealed by an underfill process to increase the sealing of the microfluidic heat dissipation device.

[0052] In some embodiments, the projection shapes of the first connecting structure 102 and the second connecting structure 103 on the first plane may be the same or different. In some specific embodiments, the projection shape of the first connecting structure 102 on the first plane includes an L-shape or a T-shape; and / or, the projection shape of the second connecting structure 103 on the first plane includes an L-shape or a T-shape; the first plane is parallel to the surface of the substrate. Among them, when the shapes of the first connecting structure 102 and the second connecting structure 103 are the same, the manufacturing process can be simplified and the manufacturing efficiency can be improved. When the shapes of the first connecting structure 102 and the second connecting structure 103 are different, the matching and adaptability of the connecting structure with the device to be cooled can be improved.

[0053] refer to Figure 3 , the first plane is the XY plane, the projection shape of the first connecting structure 102 on the XY plane is T-shaped, and the projection shape of the second connecting structure 103 on the XY plane is T-shaped. In other embodiments, the projection shapes of the first connecting structure 102 and the second connecting structure 103 on the XY plane may also include any other suitable shapes, which are not limited in the present disclosure.

[0054] In some embodiments, in conjunction with reference Figure 3 and Figure 4 , when the projection shapes of the first connecting structure 102 and the second connecting structure 103 on the XY plane are the same and are both T-shaped, the first part A1 of the first cavity and the second part B2 of the second cavity 111 are circular hole shapes, and their diameters are both in the range of 1.5-3mm, such as 2mm. The width range of the second part B1 of the first cavity 110 and the first part A2 of the second cavity 111 in the X-axis direction is 2-3mm, such as 2.62mm. The width range of the second part B1 of the first cavity 110 and the first part A2 of the second cavity 111 in the Y-axis direction is 20-30mm, such as 25.3 (=12.65*2)mm. The width range of the third part C1 of the first cavity and the third part C2 of the second cavity in the X-axis direction is 10-20mm, such as 15.35mm.

[0055] It should be understood that according to the overall size of the device to be cooled 200 and the size of the first port and the second port, the size of the corresponding structure (such as the second flow channel and the third flow channel) in the microfluidic heat dissipation device 100 is also different. This arrangement is used to improve the compatibility of the device to be cooled 200 and the microfluidic heat dissipation device 100.

[0056] In some embodiments, reference Figure 1 , the microfluidic heat dissipation device 100 also includes: a first wiring layer 112, a second wiring layer 113 and an interconnect structure 114. The first wiring layer 112 and the second wiring layer 113 can be used to reprocess the signals inside the heat dissipation device and / or the microfluidic heat dissipation device to optimize the signal transmission path and reduce transmission delay and power consumption. The first wiring layer 112 covers the first surface of the substrate 101; the second wiring layer 113 covers the second surface of the substrate 101; the second surface and the first surface are two opposite surfaces of the substrate 101 in the Z-axis direction. The first joint 104 and the second joint 105 are located on the side of the first wiring layer 112 away from the substrate 110. Here, the connection between the first joint and the second joint and the first wiring layer can be sealed by a sealant to improve the sealing of the device.

[0057] The interconnection structure 114 penetrates the substrate 101 in the Z-axis direction, and one end of the interconnection structure 114 in the Z-axis direction is coupled to the first wiring layer 112; the other end of the interconnection structure 114 in the Z-axis direction is coupled to the second wiring layer 113. Figure 1 , the interconnection structure 114 is disposed between the first connection structure 102 and the second connection structure 103. Here, the interconnection structure 114 can be used to transmit signals and play a supporting role.

[0058] In some embodiments, the material of the first wiring layer, the second wiring layer, and the interconnect structure includes copper.

[0059] Here, the first wiring layer 112 is provided with a first channel, a second channel, a third channel and a fourth channel which penetrate the first wiring layer 112 and are arranged at intervals along the X-axis direction; the first channel is connected to the first flow channel 106; the second channel is connected to the second flow channel 107; the third channel is connected to the third flow channel 108; and the fourth channel is connected to the fourth flow channel 109.

[0060] In some embodiments, reference Figure 1 The microfluidic heat dissipation device 100 also includes: a first pad 115 located on the side wall and part of the bottom surface of the first channel; a second pad 116 located on the side wall of the second channel; a third pad 117 located on the side wall of the third channel; and a fourth pad 118 located on the side wall and part of the bottom surface of the fourth channel.

[0061] The material of the first pad 115 , the second pad 116 , the third pad 117 and the fourth pad 118 includes, but is not limited to, copper, which is used to enhance the corrosion resistance of the device.

[0062] In an embodiment of the present disclosure, a microfluidic heat dissipation device is provided, which includes a first connecting structure and a second connecting structure isolated from each other, the first connecting structure has a first flow channel and a second flow channel, and the second connecting structure has a third flow channel and a fourth flow channel, wherein the second flow channel of the microfluidic heat dissipation device is connected to the first port of the device to be dissipated, and the third flow channel of the microfluidic heat dissipation device is connected to the second port of the device to be dissipated, so that different ports of the device to be dissipated are connected to different connecting structures, so that the structural layout between the microfluidic heat dissipation device and the device to be dissipated is more matched and more reasonable, thereby enhancing the sealing of the two, and further improving the reliability of the connection between the two; further, the coolant can be passed into the first connecting structure through the first flow channel, and passed into the device to be dissipated through the second flow channel, and then, after the coolant is subjected to a temperature reduction treatment on the device to be dissipated, it is passed into the second connecting structure through the third flow channel, and then flows out through the fourth flow channel, so that the coolant can realize the circulation cooling of the device to be dissipated, thereby improving the heat dissipation performance and extending the service life of the device to be dissipated; furthermore, the microfluidic heat dissipation device provided by the present disclosure has a simple structure, is easy to operate, and is suitable for large-scale mass production.

[0063] Based on the above-mentioned microfluidic heat dissipation device, the present disclosure also provides a method for manufacturing a microfluidic heat dissipation device. Figure 5 , Figure 5 The present invention is a schematic diagram of a manufacturing method of a microfluidic heat dissipation device according to an embodiment of the present invention; the manufacturing method comprises the following steps:

[0064] Step S501: forming a first cavity and a second cavity isolated from each other in a substrate.

[0065] Step S502: forming a first flow channel, a second flow channel, a third flow channel and a fourth flow channel arranged at intervals in the substrate; the first flow channel and the second flow channel are connected to the first cavity to form a first connecting structure; the third flow channel and the fourth flow channel are connected to the second cavity to form a second connecting structure.

[0066] Step S503: seal the first joint and the second joint on one side of the substrate; the first joint is connected to the first flow channel, and the second joint is connected to the fourth flow channel. The second flow channel is connected to the first port of the device to be cooled; the third flow channel is connected to the second port of the device to be cooled.

[0067] It should be understood that Figure 5 The steps shown in the operation are not exclusive, and other steps may be performed before, after or between any steps in the operation shown; Figure 5 The steps shown in the figure can be adjusted in sequence according to actual needs. Figures 6 to 20 The schematic diagram of the formation process of the microfluidic heat dissipation device provided in the embodiment of the present disclosure is shown below. Figures 5 to 20The manufacturing method of the microfluidic heat dissipation device provided in the embodiment of the present disclosure is introduced in detail.

[0068] The present disclosure provides two solutions for forming a first cavity and a second cavity isolated from each other in a substrate, wherein the first solution is:

[0069] Execute step S501, refer to Figure 6 A first sub-substrate 601 is provided, and a first group of grooves 602 and a second group of grooves 603 are formed in the first sub-substrate 601. A second sub-substrate 604 is provided, and a third group of grooves 605 and a fourth group of grooves 606 are formed in the second sub-substrate 604.

[0070] like Figure 6 As shown, the first group of grooves 602 may include two grooves ( 6021 , 6022 ), and the second group of grooves 603 may include two grooves ( 6031 , 6032 ), and the grooves 6022 and 6031 may extend along the Y-axis direction.

[0071] Here, the material of the first sub-substrate 601 and the second sub-substrate 604 includes silicon or silicon oxide. The method of forming the groove includes but is not limited to etching, and the etching includes dry etching, wet etching, and laser etching. The shape of the first sub-substrate 601 and the second sub-substrate 604 can be rectangular, square, circular or triangular, etc. The thickness of the first sub-substrate 601 and the second sub-substrate 604 in the Z-axis direction ranges from 2 to 3 mm, for example, 2 mm.

[0072] It should be noted that the reference Figure 6 When forming the first group of grooves 602 and the second group of grooves 603, the etching process did not etch through the first sub-substrate 601, and the remaining unetched first sub-substrate 601 had a thickness range of 0.05-0.2 mm, for example, 0.1 mm. The third group of grooves 605 and the fourth group of grooves 606 also did not etch through the second sub-substrate 604, and the remaining unetched second sub-substrate 604 had a thickness range of 1-2 mm, for example, 1.2 mm. The depth range of the first group of grooves 602, the second group of grooves 603, the third group of grooves 605, and the fourth group of grooves 606 in the Z-axis direction was 0.1-1 mm, for example, 0.4 mm.

[0073] refer to Figure 7, aligning and hot-pressing the first sub-substrate 601 and the second sub-substrate 604 to form a substrate 607; wherein the first group of grooves and the third group of grooves are connected to form a first cavity 608; and the second group of grooves and the fourth group of grooves are connected to form a second cavity 609. The cross-sectional shape of the first cavity 608 and the second cavity 609 on the XZ plane is U-shaped. The bonding process includes chemical bonding, direct bonding (melt bonding), ultraviolet curing bonding, inorganic or organic adhesive bonding, and plasma treatment bonding.

[0074] refer to Figure 8 , a first interconnection hole is formed in the substrate 607 and passes through the substrate 607 along the Z-axis direction, and a conductive material is filled in the first interconnection hole to form an interconnection structure 610. The conductive material includes but is not limited to copper, and the interconnection structure 610 can be used to transmit signals. The interconnection structure 610 is located between the first cavity 608 and the second cavity 609 and can be used to play a supporting role. The method of forming the first interconnection hole includes but is not limited to laser drilling, chemical etching, mechanical drilling, photolithography and electroplating, and direct molding.

[0075] It should be noted that both ends of the interconnect structure 610 in the Z-axis direction are exposed for connection with the first wiring layer and the second wiring layer formed in the subsequent process, which will be described in detail below and will not be repeated here.

[0076] In this way, a first cavity and a second cavity isolated from each other can be formed in the substrate through the above-mentioned solution 1.

[0077] Option 2:

[0078] Execute step S501, refer to Fig. 9 , providing an initial substrate 611, and defining a first preset area 612 and a second preset area 613 isolated from each other in the initial substrate 611. The material of the initial substrate includes silicon or silicon oxide. The shape of the initial substrate can be rectangular, square, circular or triangular, etc. The thickness of the initial substrate in the Z-axis direction ranges from 4 mm to 10 mm, for example, 5 mm.

[0079] refer to Fig.10 , a first through hole array 614 and a second through hole array 615 are formed in the initial substrate 611; the first through hole array 614 extends to the first preset area 612 in the Z-axis direction, and the second through hole array 615 extends to the second preset area 613 in the Z-axis direction.

[0080] In actual operation, the first through hole array 614 and the second through hole array 615 can be engraved in the initial substrate by ultrafast laser direct writing. The first through hole array 614 and the second through hole array 615 each include a plurality of through holes extending along the Z-axis direction; illustratively, the diameter of each through hole is 50 um, and the spacing between two adjacent through holes in the X-axis direction is 1 mm.

[0081] In some embodiments, the method further includes: in the process of forming the first through hole array and the second through hole array, laser modifying the first preset area 612 and the second preset area 613, and forming a laser modified area 616 that penetrates the initial substrate in the Z-axis direction. The laser modification process includes through-glass via (TGV) laser modification. The laser modified area 616 is located between the first preset area 612 and the second preset area 613.

[0082] refer to Fig.11 , a portion of the initial substrate (at this time, the initial substrate after laser modification) located in the first preset area is removed using the first through hole array 614 to form a first cavity 608 in the initial substrate; and a portion of the initial substrate (at this time, the initial substrate after laser modification) located in the second preset area is removed using the second through hole array 615 to form a second cavity 609 in the initial substrate. And a portion of the initial substrate in the laser modified area 616 is removed to form a second interconnection hole 617 in the initial substrate.

[0083] In actual operation, the sample can be immersed in a 10% hydrofluoric acid (HF) solution at room temperature and immersed in an ultrasonic bath for about 15 minutes to remove the materials in the first preset area, the second preset area and the laser modified area, and then washed with deionized water and dried.

[0084] refer to Fig.12 , the first through hole array and the second through hole array are sealed to form a substrate 607.

[0085] In actual operation, the first through hole array and the second through hole array can be sealed by inducing glass melting through a carbon dioxide laser.

[0086] Next, chemical mechanical polishing (CMP) is performed on the first surface and the second surface of the substrate to polish both sides of the substrate, thereby ensuring the flatness of the substrate.

[0087] refer to Fig.13 , a conductive material is formed in the second interconnect hole to form an interconnect structure 610. The conductive material includes but is not limited to copper, and the interconnect structure 610 can be used to transmit signals. The interconnect structure 610 is located between the first cavity 608 and the second cavity 609 and can be used to play a supporting role.

[0088] In actual operation, TGV technology can be used to make interconnect holes that penetrate the substrate to achieve electrical connection between different layers in three-dimensional integration or packaging. The process flow may include steps such as drilling the substrate, metallizing the hole wall, and filling with conductive materials.

[0089] In this way, a first cavity and a second cavity isolated from each other can be formed in the substrate through the second solution.

[0090] In some embodiments, reference Fig.14 The method further includes: forming a first wiring layer 618 on the first surface of the substrate 607 , and forming a second wiring layer 619 on the second surface of the substrate 607 .

[0091] In practical applications, a first wiring layer and a second wiring layer of a preset pattern can be formed through a series of process flows such as molding, exposure, development, etching, and film stripping. The first wiring layer 618 is connected to one end of the interconnection structure 610 in the Z-axis direction, and the second wiring layer 619 is connected to the other end of the interconnection structure 610 in the Z-axis direction, so that the transmission and re-layout of electrical signals can be realized.

[0092] refer to Fig.15 , Fig.16 and Fig.17 The method further includes: forming a plurality of holes 620 (the first hole, the second hole, the third hole and the fourth hole in sequence) penetrating the first wiring layer 618 and arranged at intervals along the X-axis direction, and forming a liner material 621 covering the side walls and bottom surfaces of the holes in the plurality of holes; removing a portion of the substrate material located on the bottom surfaces of the first hole and the fourth hole to form a first channel 622, a second channel 623, a third channel 624 and a fourth channel 625 penetrating the first wiring layer 618 and arranged at intervals along the X-axis direction, and a first liner located on the side wall and a portion of the bottom surface of the first channel 622; a second liner located on the side wall of the second channel 623; a third liner located on the side wall of the third channel 624; and a fourth liner located on the side wall and a portion of the bottom surface of the fourth channel 625.

[0093] Here, the process of forming the plurality of holes includes but is not limited to physical drilling, laser drilling, etc. During the drilling process, the first surface of the substrate can be used as a drilling stop layer. The material of the pad material includes but is not limited to copper. The method of forming the substrate material includes but is not limited to copper plating process; the copper plating process includes chemical copper plating, electrolytic copper plating, etc.

[0094] Execute step S502, refer to Fig.18, a first flow channel 626, a second flow channel 627, a third flow channel 628 and a fourth flow channel 629 are formed in the substrate 607 and are arranged at intervals; the first flow channel 626 and the second flow channel 627 are connected to the first cavity 608 to form a first connecting structure 630; the third flow channel 628 and the fourth flow channel 629 are connected to the second cavity 609 to form a second connecting structure 631.

[0095] Among them, the first flow channel 626 is connected to one end of the first cavity 608, and the second flow channel 627 is connected to the other end of the first cavity 608, so that the first connecting structure 630 can form a passage; the third flow channel 628 is connected to one end of the second cavity 609, and the fourth flow channel 629 is connected to the other end of the second cavity 609, so that the second connecting structure 631 can form a passage.

[0096] Here, the first channel 622 is in communication with the first flow channel 626 ; the second channel 623 is in communication with the second flow channel 627 ; the third channel 624 is in communication with the third flow channel 628 ; and the fourth channel 625 is in communication with the fourth flow channel 629 .

[0097] refer to Fig.19 The method also includes: sealing the heat dissipation device 700 on the side of the first wiring layer 618 away from the substrate 607 through a copper bonding process and an underfill process, and connecting the first port 701 of the heat dissipation device 700 with the second flow channel 627, and connecting the first port 702 of the heat dissipation device 700 with the third flow channel 628.

[0098] In practical applications, the heat dissipation device 700 and the first wiring layer 618 can be sealed by using a sealant 800, so that a sealing structure with high strength and good sealing performance can be formed.

[0099] Execute step S503, refer to Fig. 20 , a first joint 632 and a second joint 633 are sealed on one side of the substrate 607 ; the first joint 632 is connected to the first flow channel 626 , and the second joint 633 is connected to the fourth flow channel 629 .

[0100] In this way, a complete microfluidic heat dissipation device can be formed. In the above step S502, the device to be cooled 700 has been sealed on the microfluidic heat dissipation device, and the flow channels and channels in the microfluidic heat dissipation device are connected with the ports and transverse microfluidic channels and / or longitudinal microfluidic channels in the device to be cooled, so as to realize the circulation cooling of the device to be cooled by the coolant. In other embodiments, the device to be cooled 700 can also be sealed on the microfluidic heat dissipation device after the complete microfluidic heat dissipation device is formed.

[0101] Based on this, in the embodiment of the present disclosure, a first connecting structure and a second connecting structure isolated from each other are formed in the microfluidic heat dissipation device, the first connecting structure has a first flow channel and a second flow channel, the second connecting structure has a third flow channel and a fourth flow channel, and the second flow channel of the microfluidic heat dissipation device is connected to the first port of the device to be dissipated, and the third flow channel of the microfluidic heat dissipation device is connected to the second port of the device to be dissipated, so that different ports of the device to be dissipated are connected to different connecting structures, so that the structural layout between the microfluidic heat dissipation device and the device to be dissipated is more matched and more reasonable, thereby enhancing the sealing of the two, and further improving the reliability of the connection between the two; further, the coolant can be passed into the first connecting structure through the first flow channel, and passed into the device to be dissipated through the second flow channel, and then, after the coolant is used to cool the device to be dissipated, it is passed into the second connecting structure through the third flow channel, and then flows out through the fourth flow channel, so that the coolant can realize the circulation cooling of the device to be dissipated, thereby improving the heat dissipation performance and extending the service life of the device to be dissipated; furthermore, the microfluidic heat dissipation device provided by the present disclosure has a simple structure, is easy to operate, and is suitable for large-scale mass production.

[0102] The specific embodiments of the present disclosure are disclosed, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A microfluidic heat dissipation device, characterized in that: include: substrate; A first communication structure, located in the substrate, the first communication structure comprising a first flow channel, a second flow channel, and a first cavity communicating with the first flow channel and the second flow channel; a second connecting structure, located in the substrate and isolated from the first connecting structure; the second connecting structure comprises a third flow channel, a fourth flow channel and a second cavity connected with the third flow channel and the fourth flow channel; A first joint and a second joint are located on one side of the substrate in the thickness direction thereof; the first joint is communicated with the first flow channel, and the second joint is communicated with the fourth flow channel; Wherein, the second flow channel is communicated with the first port of the device to be cooled; and the third flow channel is communicated with the second port of the device to be cooled.

2. The microfluidic heat dissipation device according to claim 1, characterized in that: The projection shape of the first connecting structure on the first plane includes an L-shape or a T-shape; and / or, A projection shape of the second connecting structure on the first plane includes an L shape or a T shape; and the first plane is parallel to a surface of the substrate.

3. The microfluidic heat dissipation device according to claim 2, characterized in that: The microfluidic heat dissipation device also includes: A first wiring layer covers the first surface of the substrate; the first connector and the second connector are located on a side of the first wiring layer away from the substrate; Among them, the first wiring layer is provided with a first channel, a second channel, a third channel and a fourth channel that penetrate the first wiring layer and are arranged at intervals; the first channel is connected to the first flow channel; the second channel is connected to the second flow channel; the third channel is connected to the third flow channel; the fourth channel is connected to the fourth flow channel.

4. The microfluidic heat dissipation device according to claim 3, characterized in that: The microfluidic heat dissipation device also includes: a second wiring layer covering a second surface of the substrate; the second surface and the first surface are two opposite surfaces of the substrate in a thickness direction thereof; and An interconnection structure penetrates the substrate; one end of the interconnection structure in the thickness direction is coupled to the first wiring layer; and the other end of the interconnection structure in the thickness direction is coupled to the second wiring layer.

5. The microfluidic heat dissipation device according to claim 4, characterized in that: The microfluidic heat dissipation device also includes: a first liner located on the sidewall and a portion of the bottom surface of the first channel; a second liner located on a side wall of the second channel; a third liner located on a sidewall of the third channel; and A fourth liner is located on the side wall and a portion of the bottom surface of the fourth channel.

6. The microfluidic heat dissipation device according to claim 4, characterized in that: The material of the substrate includes silicon or silicon oxide; the material of the first wiring layer and the second wiring layer includes copper; the material of the interconnect structure includes copper; the material of the first connector and the second connector includes polyetheretherketone or copper.

7. The microfluidic heat dissipation device according to claim 1, characterized in that: The width of the first flow channel in a direction perpendicular to the thickness direction is greater than the width of the second flow channel in a direction perpendicular to the thickness direction; and / or the width of the fourth flow channel in a direction perpendicular to the thickness direction is greater than the width of the third flow channel in a direction perpendicular to the thickness direction.

8. A method for manufacturing a microfluidic heat dissipation device, characterized in that: The method comprises: forming a first cavity and a second cavity isolated from each other in a substrate; A first flow channel, a second flow channel, a third flow channel and a fourth flow channel are formed in the substrate and arranged at intervals; the first flow channel and the second flow channel are connected to the first cavity to form a first connecting structure; the third flow channel and the fourth flow channel are connected to the second cavity to form a second connecting structure; A first joint and a second joint are sealed on one side of the substrate; the first joint is connected to the first flow channel, and the second joint is connected to the fourth flow channel; Wherein, the second flow channel is communicated with the first port of the device to be cooled; and the third flow channel is communicated with the second port of the device to be cooled.

9. The manufacturing method according to claim 8, characterized in that: The method of forming a first cavity and a second cavity isolated from each other in a substrate comprises: Providing a first sub-substrate, forming a first group of grooves and a second group of grooves isolated from each other in the first sub-substrate; Providing a second sub-substrate, forming a third group of grooves and a fourth group of grooves isolated from each other in the second sub-substrate; The first sub-substrate is bonded to the second sub-substrate to form the substrate; wherein the first group of grooves is connected to the third group of grooves to form the first cavity; and the second group of grooves is connected to the fourth group of grooves to form the second cavity.

10. The manufacturing method according to claim 9, characterized in that: The method further comprises: forming a first interconnection hole penetrating the substrate in a thickness direction of the substrate; and A conductive material is filled in the first interconnection hole to form an interconnection structure.

11. The manufacturing method according to claim 8, characterized in that: The method of forming a first cavity and a second cavity isolated from each other in a substrate comprises: Providing an initial substrate, and defining a first preset area and a second preset area isolated from each other in the initial substrate; A first through hole array and a second through hole array are formed in the initial substrate; the first through hole array extends to the first preset area in the thickness direction of the initial substrate, and the second through hole array extends to the second preset area in the thickness direction of the initial substrate; Using the first through hole array to remove a portion of the initial substrate located in the first preset area to form a first cavity in the initial substrate; and using the second through hole array to remove a portion of the initial substrate located in the second preset area to form a second cavity in the initial substrate; The first through hole array and the second through hole array are sealed to form the substrate.

12. The manufacturing method according to claim 11, characterized in that: The method further comprises: In the process of forming the first through hole array and the second through hole array, forming second interconnecting holes penetrating the initial substrate in the thickness direction of the initial substrate; and After forming the substrate, the second interconnection holes are filled with a conductive material to form an interconnection structure.

13. The manufacturing method according to claim 10 or 12, characterized in that: The method further comprises: forming a first wiring layer on a first surface of the substrate; and A first channel, a second channel, a third channel and a fourth channel are formed which penetrate the first wiring layer and are arranged at intervals; the first channel is connected to the first flow channel; the second channel is connected to the second flow channel; the third channel is connected to the third flow channel; and the fourth channel is connected to the fourth flow channel.

14. The manufacturing method according to claim 13, characterized in that: The method further comprises: forming a second wiring layer on a second surface of the substrate; the second surface and the first surface are two opposite surfaces of the substrate in the thickness direction thereof; Among them, one end of the interconnection structure in the thickness direction of the substrate is coupled to the first wiring layer; the other end of the interconnection structure in the thickness direction of the substrate is coupled to the second wiring layer.

15. The manufacturing method according to claim 13, characterized in that: The method further comprises: forming a first liner on a side wall and a portion of a bottom surface of the first channel; forming a second liner on a side wall of the second channel; forming a third liner on a sidewall of the third channel; and A fourth liner is formed on the side wall and a portion of the bottom surface of the fourth channel.

Images