Radio frequency electrode simulation method and device, computer equipment and storage medium

Abstract

The invention relates to a radio frequency electrode simulation method and device, computer equipment and a storage medium, the method is applied to a periodic electrode, and the method comprises the steps that a three-dimensional electrode model is established according to the type of a radio frequency electrode needing to be simulated; establishing a simulation model according to the three-dimensional electrode model; performing simulation according to the simulation model and a first formula to obtain a plurality of design parameter groups; acquiring a simulation result of the radio frequency electrode needing to be simulated according to the plurality of design parameter groups, the first formula and a screening condition; wherein the three-dimensional electrode model comprises electrodes with boundary conditions and a preset number of periods, and the preset number of periods are one period or a half period. According to the invention, the simulation speed can be improved.

Description

Technical Field

[0001] The present invention relates to the field of modulators, and in particular to a radio frequency electrode simulation method, device, computer equipment and storage medium. Background Art

[0002] In the field of optical communication and optical information processing, modulators are key components for encoding signals onto light waves. The key to modulator design lies in the design of high-speed RF electrodes, because the bandwidth and high-speed characteristics of the modulator are completely determined by the electrodes. In electrode design, electrode simulation is particularly important.

[0003] Among various electrode designs, periodic electrodes are favored due to their design flexibility. Periodic electrodes can reduce RF losses while maintaining a small electrode spacing for efficient modulation, overcoming the voltage bandwidth limitation in lithium niobate modulators.

[0004] In the prior art, the design and simulation of periodic electrodes rely on two methods, namely, the analytical expression method and the S-parameter method, but these methods have significant defects.

[0005] In the analytical expression method, the expression of capacitance is obtained by using conformal mapping to determine the partial capacitance, which is not applicable to complex electrode shapes. At the same time, due to the skin effect, the expressions of resistance and inductance are inaccurate at high frequencies. In the S-parameter method, the S-parameter calculation of periodic electrodes requires numerical simulation of a complete long section of electrode, such as a 1000-micron-long electrode. Therefore, this method requires huge computational overhead. Especially when the modulation frequency exceeds 100 GHz, the mesh is finer, and this computational overhead becomes more serious.

[0006] It can be seen that in the prior art, the simulation method is complex, the system resource consumption is large, and the simulation speed is slow. Summary of the invention

[0007] In order to solve the above technical problems or at least partially solve the above technical problems, the present invention provides a radio frequency electrode simulation method, device, computer equipment and storage medium.

[0008] In a first aspect, the present invention provides a radio frequency electrode simulation method, which is applied to a periodic electrode, and the method comprises:

[0009] Establish a three-dimensional electrode model according to the type of radio frequency electrode to be simulated;

[0010] Establishing a simulation model according to the three-dimensional electrode model;

[0011] Perform simulation according to the simulation model and the first formula to obtain multiple design parameter groups;

[0012] Acquire a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition;

[0013] Wherein, the three-dimensional electrode model includes: boundary conditions and electrodes of a preset number of periods, and the preset number of periods is one period or half a period.

[0014] Optionally, if the type of the radio frequency electrode to be simulated is an antisymmetric electrode, the three-dimensional electrode model includes:

[0015] Four periodic boundary conditions, two PEC boundary conditions and an electrode of one-half period, wherein the electrode simulation region of the simulation model corresponding to the antisymmetric electrode is an electrode of one-half period;

[0016] If the type of the radio frequency electrode to be simulated is a symmetrical electrode, the three-dimensional electrode model includes:

[0017] Four periodic boundary conditions, two PMC boundary conditions and electrodes of one-half period, the simulation area of ​​the simulation model is the electrodes of one-half period, and the electrode simulation area of ​​the simulation model corresponding to the symmetric electrode is the electrodes of one-half period;

[0018] If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model includes:

[0019] There are six periodic boundary conditions and one periodic electrode, and the electrode simulation area of ​​the simulation model corresponding to the asymmetric electrode is one periodic electrode.

[0020] Optionally, establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated includes:

[0021] According to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated, obtaining a partition of a simulation area of ​​the electrode;

[0022] Obtaining material parameters of each of the partitions;

[0023] According to the partitions and material parameters of the partitions, obtaining equivalent parameters of each of the partitions;

[0024] Acquiring the boundary condition according to the boundary surface of the three-dimensional electrode model;

[0025] The three-dimensional electrode model is established according to the equivalent parameters of the partitions and the boundary conditions.

[0026] Optionally, the partition of the simulation area of ​​the electrode includes PN junction and / or thin layer partition,

[0027] The obtaining of equivalent parameters of each partition includes:

[0028] Obtaining equivalent parameters of the PN junction and / or obtaining equivalent parameters of the thin layer partition;

[0029] The obtaining of the equivalent parameters of the PN junction includes the following steps:

[0030] The conductivity σ of the equivalent area of ​​the N++ partition of the PN junction NN for:

[0031]

[0032] The conductivity σ of the equivalent area of ​​the P++ partition of the PN junction PP for:

[0033]

[0034] Among them, R NNs is the sheet resistance of the N++ partition of the PN junction, t NN is the thickness of the N++ partition of the PN junction, R PPs is the sheet resistance of the P++ partition of the PN junction, t PP is the thickness of the P++ partition of the PN junction;

[0035] The dielectric constant ε of the equivalent area of ​​the PN partition of the PN junction PN for:

[0036]

[0037] N conductivity σ of the equivalent area of ​​the PN partition of the PN junction N for:

[0038]

[0039] The P conductivity σ of the equivalent area of ​​the PN partition of the PN junction P for:

[0040]

[0041] Among them, w PN is the width of the PN junction depletion region, C PN is the PN junction capacitance, t s is the thickness of the equivalent RF material after conversion, L s is the length extending in the direction perpendicular to the PN junction cross section set in the semiconductor simulation, w N R is the width of the remaining area of ​​the N region of the PN junction minus the depletion region. N is the N region resistance of the PN junction, w PR is the width of the remaining area of ​​the P region of the PN junction minus the depletion region. P is the P region resistance of the PN junction.

[0042] Optionally, the obtaining of equivalent parameters of the thin layer partition includes:

[0043] converting the volume integral of the region into a surface integral;

[0044] The conversion of the volume integral of the thin layer partition into the surface integral is carried out in the following manner:

[0045]

[0046] ε re =ε r -σ / (iω rf ε0),

[0047] Where k0 is the vacuum wave vector, w is the test function of u, u is the Bloch mode field of the electric field, ε re is the equivalent dielectric constant distribution of the material, ε r is the dielectric constant distribution of the material, σ is the conductivity distribution of the material, ω rf is the angular frequency of the radio frequency, ε0 ​​is the vacuum dielectric constant, i is the imaginary unit, Ω represents the thin layer partition, S represents the bottom surface of the thin layer partition, t S (x, z) is the thickness distribution of the thin layer partition, is the dielectric constant of silicon oxide.

[0048] Optionally, the simulating according to the simulation model and the first formula to obtain multiple design parameter groups includes:

[0049] Obtain multiple electrode size groups;

[0050] Calculate a design parameter group corresponding to each electrode size group according to the multiple electrode size groups, the simulation model and the first formula;

[0051] The design parameter group includes: periodic electrode phase refractive index n r , periodic RF electrode characteristic impedance Z c and electrode loss α.

[0052] Optionally, the screening condition is:

[0053] Periodic RF electrode characteristic impedance Z c Within the preset range, and the periodic RF electrode phase refractive index n r Equal to the group refractive index n of the optical waveguide g ;

[0054] The obtaining the simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition includes:

[0055] Acquire the design parameter group that meets the screening condition as a design parameter group to be selected;

[0056] From the candidate design parameter groups, the one with the smallest electrode loss α is selected as the simulation result.

[0057] In a second aspect, a radio frequency electrode simulation device is provided, the device comprising:

[0058] The electrode model unit is used to establish a three-dimensional electrode model according to the type of RF electrode to be simulated:

[0059] A simulation model unit, used for establishing a simulation model according to the three-dimensional electrode model;

[0060] A parameter unit, used to perform simulation according to the simulation model and the first formula to obtain multiple design parameter groups;

[0061] A simulation unit, configured to obtain a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition;

[0062] Wherein, the three-dimensional electrode model includes: boundary conditions and electrodes of a preset number of periods, and the preset number of periods is one period or half a period.

[0063] In a third aspect, a computer device is provided, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements any of the methods described above when executing the computer program.

[0064] In a fourth aspect, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the method as described in any one of the above items is implemented.

[0065] The present invention provides a radio frequency electrode simulation method, device, computer equipment and storage medium, the method is applied to periodic electrodes, the method includes: establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; establishing a simulation model according to the three-dimensional electrode model; simulating according to the simulation model and a first formula to obtain multiple design parameter groups; obtaining the simulation results of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening conditions; wherein the three-dimensional electrode model includes: boundary conditions and a preset number of periodic electrodes, the preset number of periods being one period or one-half period. The method of the embodiment of the present invention establishes a simulation model according to an electrode model, and different types of electrodes correspond to different electrode models and simulation models. For antisymmetric electrodes and symmetric electrodes, the simulation area can be reduced to electrodes of half a period; and for asymmetric electrodes, it can also be reduced to electrodes of one period. The method of the present invention can save subsequent resource consumption, and at the same time, since the area to be simulated is reduced to electrodes of half a period or one period, the simulation speed can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0067] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0068] Figure 1 The figure shows an application environment diagram of the radio frequency electrode simulation method in an embodiment of the present invention;

[0069] Figure 2 FIG. 1 is a flow chart of a radio frequency electrode simulation method according to an embodiment of the present invention;

[0070] Figure 3 Shown is a schematic diagram of a three-dimensional electrode model of an antisymmetric electrode according to an embodiment of the present invention;

[0071] Figure 4 Shown is a schematic diagram of a three-dimensional electrode model of a symmetrical electrode according to an embodiment of the present invention;

[0072] Figure 5 Shown is a two-dimensional cross-sectional schematic diagram of an antisymmetric electrode according to an embodiment of the present invention;

[0073] Figure 6 FIG. 1 is a schematic diagram of a simulation model of a PN junction according to an embodiment of the present invention;

[0074] Figure 7 Shown is a two-dimensional cross-sectional schematic diagram of an electrode including thin-layer partitions according to an embodiment of the present invention;

[0075] Figure 8 is a structural block diagram of a radio frequency electrode simulation device according to an embodiment of the present invention;

[0076] Fig. 9 1 is a diagram showing the internal structure of a computer device in an embodiment of the present invention. DETAILED DESCRIPTION

[0077] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0078] Figure 1 FIG. 1 is an application environment diagram of a radio frequency electrode simulation method in an embodiment. Figure 1 , the radio frequency electrode simulation method is applied to the radio frequency electrode simulation system. The radio frequency electrode simulation method includes a terminal 110 and / or a server 120. The terminal 110 and the server 120 are connected via a network. The terminal 110 can be a desktop terminal or a mobile terminal, and the mobile terminal can be at least one of a mobile phone, a tablet computer, a laptop computer, etc. The server 120 can be implemented by an independent server or a server cluster composed of multiple servers.

[0079] like Figure 2 As shown, in one embodiment, a radio frequency electrode simulation method is provided. This embodiment mainly applies the method to the above Figure 1 The terminal 110 and / or server 120 in FIG. 1 is illustrated as an example. Figure 2 , the RF electrode simulation includes:

[0080] Step 210, establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated;

[0081] Step 220, establishing a simulation model based on the three-dimensional electrode model;

[0082] Step 230, performing simulation according to the simulation model and the first formula to obtain multiple design parameter groups;

[0083] Step 240, obtaining a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition;

[0084] Wherein, the three-dimensional electrode model includes: boundary conditions and electrodes of a preset number of periods, and the preset number of periods is one period or half a period.

[0085] If the type of the RF electrode to be simulated is an antisymmetric electrode, such as a GS-type electrode of a silicon optical modulator, the three-dimensional electrode model includes:

[0086] Four periodic boundary conditions, two PEC (Perfect Electric Conductor, perfect semiconductor, referred to as PEC) boundary conditions and an electrode of one-half period, the electrode simulation area of ​​the simulation model corresponding to the antisymmetric electrode is an electrode of one-half period;

[0087] If the type of the RF electrode to be simulated is a symmetrical electrode, such as a lithium niobate modulator GSG electrode, the three-dimensional electrode model includes:

[0088] Four periodic boundary conditions, two PMC (Perfect Magnetic Conductor, PMC for short) boundary conditions and electrodes of one-half period, the simulation area of ​​the simulation model is electrodes of one-half period, and the electrode simulation area of ​​the simulation model corresponding to the symmetrical electrode is electrodes of one-half period;

[0089] If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model includes:

[0090] There are six periodic boundary conditions and one periodic electrode, and the electrode simulation area of ​​the simulation model corresponding to the asymmetric electrode is one periodic electrode.

[0091] The method of the embodiment of the present invention establishes a simulation model according to the electrode model, different types of electrodes correspond to different electrode models and simulation models, different boundary conditions and a preset number of cycles of electrodes are set, and the preset number of cycles is one cycle or one-half cycle. In the method of the present invention, the complete electrode that originally needs to be simulated is simplified to one cycle or one-half cycle, thereby saving subsequent resource consumption. Since the area that needs to be simulated is reduced to one cycle or half a cycle of electrodes, the simulation speed can be improved.

[0092] Figure 3 It is a schematic diagram of a three-dimensional electrode model of an antisymmetric electrode according to an embodiment of the present invention, 301 is a PEC boundary, and the boundary outside 301 is a periodic boundary. Figure 3 The embodiment shown is a GS-type electrode of a silicon optical modulator, which also includes a period of silicon optical T-type electrode 302 .

[0093] Figure 4 It is a schematic diagram of a three-dimensional electrode model of a symmetric electrode according to an embodiment of the present invention, 401 is a PMC boundary, and the boundary outside 401 is a periodic boundary. Figure 4 The embodiment shown is a lithium niobate modulator GSG electrode, which also includes a period of lithium niobate electrode 402.

[0094] Since both symmetric electrodes and antisymmetric electrodes are symmetrical, in an embodiment of the present invention, a perfect electric conductor (PEC) or a perfect magnetic conductor (PMC) can be used as a boundary condition, and the simulation area can be reduced to a half-cycle electrode, thereby saving subsequent resource consumption.

[0095] In the embodiment of the present invention, in step 220, the three-dimensional electrode model is established according to the type of radio frequency electrode to be simulated, including:

[0096] According to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated, obtaining a partition of a simulation area of ​​the electrode;

[0097] Obtaining material parameters of each of the partitions;

[0098] According to the partitions and material parameters of the partitions, obtaining equivalent parameters of each of the partitions;

[0099] Acquiring the boundary condition according to the boundary surface of the three-dimensional electrode model;

[0100] The three-dimensional electrode model is established according to the equivalent parameters of the partitions and the boundary conditions.

[0101] In the embodiment of the present invention, the partition of the simulation area of ​​the electrode includes PN junction and / or thin layer partition.

[0102] The obtaining of equivalent parameters of each partition includes:

[0103] Obtaining equivalent parameters of the PN junction and / or obtaining equivalent parameters of the thin layer partition.

[0104] Different types of electrodes may include different partitions. For example, a symmetrical electrode may include neither a PN junction nor a thin layer partition. A symmetrical electrode may include either a PN junction or a thin layer partition. A symmetrical electrode may also include both a PN junction and a thin layer partition.

[0105] Similarly, asymmetric electrodes and antisymmetric electrodes also have the above four situations, which will not be elaborated here.

[0106] The electrode to be simulated contains which kind of partitions, and the equivalent parameters of the corresponding partitions are obtained during the simulation.

[0107] In the embodiment of the present invention, there are P++ partitions of the PN junction, N++ partitions of the PN junction, and PN partitions of the PN junction.

[0108] In the embodiment of the present invention, obtaining the equivalent parameters of the PN junction includes the following method:

[0109] The conductivity σ of the equivalent area of ​​the N++ partition of the PN junction NN for:

[0110]

[0111] The conductivity σ of the equivalent area of ​​the P++ partition of the PN junction PP for:

[0112]

[0113] Among them, R NNs is the sheet resistance of the N++ partition of the PN junction, t NN is the thickness of the N++ partition of the PN junction, R PPs is the sheet resistance of the P++ partition of the PN junction, t PP is the thickness of the P++ partition of the PN junction;

[0114] The dielectric constant ε of the equivalent area of ​​the PN partition of the PN junction PN for:

[0115]

[0116] N conductivity σ of the equivalent area of ​​the PN partition of the PN junction N for:

[0117]

[0118] The P conductivity σ of the equivalent area of ​​the PN partition of the PN junction P for:

[0119]

[0120] Among them, w PN is the width of the PN junction depletion region, C PN is the PN junction capacitance, t s is the thickness of the equivalent RF material after conversion, L s is the length extending in the direction perpendicular to the PN junction cross section set in the semiconductor simulation, w N R is the width of the remaining area of ​​the N region of the PN junction minus the depletion region. N is the N region resistance of the PN junction, w P R is the width of the remaining area of ​​the P region of the PN junction minus the depletion region.p is the P region resistance of the PN junction. In the embodiment of the present invention, the PN junction can be converted into an equivalent RF material distribution, and the equivalent RF material parameters can be obtained based on the semiconductor simulation of the two-dimensional cross section and brought into the three-dimensional RF electrode simulation, thereby avoiding the need for three-dimensional semiconductor simulation and greatly accelerating the process of electrode design and simulation.

[0121] In the embodiment of the present invention, the obtaining of equivalent parameters of the thin layer partition includes:

[0122] Converting the volume integral of the flat plate area of ​​the symmetrical electrode into a surface integral;

[0123] The conversion of the volume integral of the flat plate area of ​​the symmetrical electrode into the surface integral is carried out in the following manner:

[0124]

[0125] ε re =ε r -σ / (iω rf ε0),

[0126] Where k0 is the vacuum wave vector, w is the test function of u, u is the Bloch mode field of the electric field, ε re is the equivalent dielectric constant distribution of the material, ε r is the dielectric constant distribution of the material, σ is the conductivity distribution of the material, ω rf is the angular frequency of the radio frequency, ε0 ​​is the vacuum dielectric constant, i is the imaginary unit, Ω represents the thin layer partition, S represents the bottom surface of the thin layer partition, t S (x, z) is the thickness distribution of the thin layer partition, is the dielectric constant of silicon oxide.

[0127] Figure 5 FIG. 2 is a schematic diagram of a two-dimensional cross section of an antisymmetric electrode according to an embodiment of the present invention. Figure 5 The antisymmetric electrodes shown include PN junction partitions.

[0128] like Figure 5 As shown, the two-dimensional cross-sectional view of the electrode includes a PN junction 510 , a metal via 521 , a metal via 522 , a metal 531 , a metal 532 , an upper cladding layer 541 , a lower cladding layer 542 and a substrate 550 .

[0129] Figure 6 FIG. 1 is a schematic diagram of a simulation model of a PN junction according to an embodiment of the present invention. Figure 6 The following is an example of a PN junction of antisymmetric electrodes. Figure 6 The partitioning of the PN junction and the equivalent parameters of the partitioning are shown in FIG.

[0130] Figure 7FIG. 1 is a schematic two-dimensional cross-sectional view of an electrode including thin-layer partitions according to an embodiment of the present invention. Figure 7 Taking a lithium niobate modulator electrode as an example, its two-dimensional cross-sectional view includes an upper cladding layer 710 , a lithium niobate thin layer 720 , a lower cladding layer 730 and a substrate 740 . Figure 7 The partitioning of the lithium niobate modulator electrode is shown as a thin layer partitioning of a symmetric electrode.

[0131] In the embodiment of the present invention, the equivalent parameters of the PN junction and the equivalent parameters of the thin layer partition are obtained, and the three-dimensional fine grid can be reduced to a two-dimensional fine grid, which can reduce the number of fine grids, thereby greatly reducing the simulation overhead and greatly accelerating the simulation calculation speed.

[0132] Figure 5 and Figure 7 The figure shows one cycle of electrodes, but in simulation, symmetric electrodes and antisymmetric electrodes only need half a cycle of T-type electrodes, for example Figure 5 In the figure, the red vertical dotted line divides one cycle of electrodes into two half cycles of electrodes.

[0133] In the embodiment of the present invention, in step 230, the simulation is performed according to the simulation model and the first formula to obtain multiple design parameter groups, including:

[0134] Obtain multiple electrode size groups;

[0135] Calculate a design parameter group corresponding to each electrode size group according to the multiple electrode size groups, the simulation model and the first formula;

[0136] The design parameter group includes: periodic electrode phase refractive index n r , periodic RF electrode characteristic impedance Z c and electrode loss α.

[0137] In the embodiment of the present invention, the screening condition is:

[0138] Periodic RF electrode characteristic impedance Z c Within the preset range, and the periodic RF electrode phase refractive index n r Equal to the group refractive index n of the optical waveguide g ;

[0139] The obtaining the simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition includes:

[0140] Acquire the design parameter group that meets the screening condition as a design parameter group to be selected;

[0141] From the candidate design parameter groups, the one with the smallest electrode loss α is selected as the simulation result.

[0142] In the embodiment of the present invention, the first formula includes the periodic electrode phase refractive index n r Calculation formula, periodic RF electrode characteristic impedance Z c Calculation formula, and electrode loss α calculation formula,

[0143] The periodic electrode phase refractive index n r The calculation formula is:

[0144] n r =Re(n eff )=Re(k z / k0)

[0145] The periodic RF electrode characteristic impedance Z c The calculation formula is:

[0146]

[0147] P z =2∫∫dxdy(E x H y -E y H x )

[0148] If the type of the RF electrode to be simulated is a silicon optical modulator electrode, the voltage V is:

[0149] V = 2∫dxE x

[0150] If the type of the RF electrode to be simulated is a lithium niobate modulator electrode, the voltage V is:

[0151] V = ∫dxE x

[0152] The calculation formula of the electrode loss α is:

[0153] α=Im(k z )

[0154] Among them, k z is the eigenvalue, k0 is the vacuum wave vector, E x is the x-direction component of the electric field, E y is the y-direction component of the electric field, H x is the x-direction component of the magnetic field, H y is the y-direction component of the magnetic field.

[0155] In the embodiment of the present invention, the electrode size group can be set to six parameters, namely L1, L2, g1, g2, w1, w2. According to practical experience, after setting the range of each parameter and the constraint condition, the constraint condition can be L2<L1<L z , the range interval can be g1, g2, w1, w2 are all greater than 0 and less than 250μm. For each parameter, the parameter value is selected at a certain interval, for example, 5μm interval is used for exhaustive enumeration; after exhaustive enumeration, multiple design parameter groups are obtained in a permutation and combination manner.

[0156] In addition, the electrode size group can adopt the above-mentioned exhaustive method, and can also adopt Monte Carlo method, particle swarm method, genetic algorithm, machine learning and other algorithms, which will not be repeated here.

[0157] The method of the embodiment of the present invention, the first formula is derived from the complex band structure of Maxwell's equations under Bloch boundary conditions. Through the first formula, the inaccuracy of the analytical expression method can be overcome. At the same time, the method of the embodiment of the present invention only requires numerical simulation calculation of half a cycle or one cycle of electrodes, so it is much less than the calculation overhead of the S parameter method. Through the method of this patent, efficient and accurate design and simulation of periodic radio frequency electrodes can be achieved.

[0158] The method of the embodiment of the present invention uses a perfect electric conductor (PEC) or a perfect magnetic conductor (PMC) as a boundary condition, which can reduce the simulation area of ​​the symmetrical electrode to a half-period electrode. For the asymmetric electrode, it can also be reduced to one period through the boundary conditions, thereby avoiding the simulation of the entire electrode, which can save subsequent resource consumption. In the embodiment of the present invention, the PN junction included in the electrode can be converted into an equivalent RF material distribution, and the equivalent RF material parameters can be obtained according to the semiconductor simulation of the two-dimensional cross section, and brought into the three-dimensional RF electrode simulation, thereby avoiding the need for three-dimensional semiconductor simulation. The present invention also converts the thin layer partition into an area integral through volume integral, which can reduce the three-dimensional fine grid into a two-dimensional fine grid, and can reduce the number of fine grids, thereby greatly reducing the simulation overhead and greatly speeding up the simulation calculation speed. It can be seen that the method of the embodiment of the present invention only requires numerical simulation calculation of one period or half a period of electrodes, so it is much less than the calculation overhead of the S parameter method. Through the method of this patent, efficient and accurate design and simulation of periodic RF electrodes can be achieved.

[0159] like Figure 8 As shown, the present invention also provides a radio frequency electrode simulation device, the device comprising:

[0160] The electrode model unit 810 is used to establish a three-dimensional electrode model according to the type of radio frequency electrode to be simulated;

[0161] A simulation model unit 820, used to establish a simulation model according to the three-dimensional electrode model;

[0162] A parameter unit 830, configured to perform simulation according to the simulation model and the first formula to obtain a plurality of design parameter groups;

[0163] A simulation unit 840, configured to obtain a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition;

[0164] Wherein, the three-dimensional electrode model includes: boundary conditions and electrodes of a preset number of periods, and the preset number of periods is one period or half a period.

[0165] In an embodiment of the present invention, if the type of the radio frequency electrode to be simulated is an antisymmetric electrode, the three-dimensional electrode model includes:

[0166] Four periodic boundary conditions, two PEC boundary conditions and an electrode of one-half period, wherein the electrode simulation region of the simulation model corresponding to the antisymmetric electrode is an electrode of one-half period;

[0167] If the type of the radio frequency electrode to be simulated is a symmetrical electrode, the three-dimensional electrode model includes:

[0168] Four periodic boundary conditions, two PMC boundary conditions and electrodes of one-half period, the simulation area of ​​the simulation model is the electrodes of one-half period, and the electrode simulation area of ​​the simulation model corresponding to the symmetric electrode is the electrodes of one-half period;

[0169] If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model includes:

[0170] There are six periodic boundary conditions and one periodic electrode, and the electrode simulation area of ​​the simulation model corresponding to the asymmetric electrode is one periodic electrode.

[0171] In the embodiment of the present invention, the simulation model unit 820 is further used for:

[0172] According to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated, obtaining a partition of a simulation area of ​​the electrode;

[0173] Obtaining material parameters of each of the partitions;

[0174] According to the partitions and material parameters of the partitions, obtaining equivalent parameters of each of the partitions;

[0175] Acquiring the boundary condition according to the boundary surface of the three-dimensional electrode model;

[0176] The three-dimensional electrode model is established according to the equivalent parameters of the partitions and the boundary conditions.

[0177] In the embodiment of the present invention, the partitions of the simulation area of ​​the electrode include PN junctions and / or thin layer partitions, and the simulation model unit 820 is further used to obtain equivalent parameters of the PN junction and / or obtain equivalent parameters of the thin layer partitions.

[0178] In the embodiment of the present invention, the simulation model unit 820 is further used to obtain the equivalent parameters of the PN junction in the following manner:

[0179] The conductivity σ of the equivalent area of ​​the N++ partition of the PN junction NN for:

[0180]

[0181] The conductivity σ of the equivalent area of ​​the P++ partition of the PN junction PP for:

[0182]

[0183] Among them, R NNs is the sheet resistance of the N++ partition of the PN junction, t NN is the thickness of the N++ partition of the PN junction, R PPs is the sheet resistance of the P++ partition of the PN junction, t PP is the thickness of the P++ partition of the PN junction;

[0184] The dielectric constant ε of the equivalent area of ​​the PN partition of the PN junction PN for:

[0185]

[0186] N conductivity σ of the equivalent area of ​​the PN partition of the PN junction N for:

[0187]

[0188] The P conductivity σ of the equivalent area of ​​the PN partition of the PN junction P for:

[0189]

[0190] Among them, w PN is the width of the PN junction depletion region, C PN is the PN junction capacitance, t s is the thickness of the equivalent RF material after conversion, L sis the length extending in the direction perpendicular to the PN junction cross section set in the semiconductor simulation, w N R is the width of the remaining area of ​​the N region of the PN junction minus the depletion region. N is the N region resistance of the PN junction, w P R is the width of the remaining area of ​​the P region of the PN junction minus the depletion region. P is the P region resistance of the PN junction.

[0191] In the embodiment of the present invention, the simulation model unit 820 is further used for:

[0192] Converting the volume integral of the flat plate area of ​​the symmetrical electrode into a surface integral;

[0193] The conversion of the volume integral of the flat plate area of ​​the symmetrical electrode into the surface integral is carried out in the following manner:

[0194]

[0195] ε re =ε r -σ / (iω rf ε0),

[0196] Where k0 is the vacuum wave vector, w is the test function of u, u is the Bloch mode field of the electric field, ε re is the equivalent dielectric constant distribution of the material, ε r is the dielectric constant distribution of the material, σ is the conductivity distribution of the material, ω rf is the angular frequency of the radio frequency, ε0 ​​is the vacuum dielectric constant, i is the imaginary unit, Ω represents the thin layer partition, S represents the bottom surface of the thin layer partition, t S (x, z) is the thickness distribution of the thin layer partition, is the dielectric constant of silicon oxide.

[0197] In the embodiment of the present invention, the parameter unit 830 is further used for:

[0198] Obtain multiple electrode size groups;

[0199] Calculate a design parameter group corresponding to each electrode size group according to the multiple electrode size groups, the simulation model and the first formula;

[0200] The design parameter group includes: periodic electrode phase refractive index n r , periodic RF electrode characteristic impedance Z c and electrode loss α.

[0201] In the embodiment of the present invention, the screening condition is:

[0202] Periodic RF electrode characteristic impedance Z cWithin the preset range, and the periodic RF electrode phase refractive index n r Equal to the group refractive index n of the optical waveguide g ;

[0203] The obtaining the simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition includes:

[0204] Acquire the design parameter group that meets the screening condition as a design parameter group to be selected;

[0205] From the candidate design parameter groups, the one with the smallest electrode loss α is selected as the simulation result.

[0206] In the embodiment of the present invention, the first formula includes the periodic electrode phase refractive index n r Calculation formula, periodic RF electrode characteristic impedance Z c Calculation formula, and electrode loss α calculation formula,

[0207] The periodic electrode phase refractive index n r The calculation formula is:

[0208] n r =Re(n eff )=Re(k z / k0)

[0209] The periodic RF electrode characteristic impedance Z c The calculation formula is:

[0210]

[0211] P z =2∫∫dxdy(E x H y -E y H x )

[0212] If the type of the RF electrode to be simulated is a silicon optical modulator electrode, the voltage V is:

[0213] V = 2∫dxE x

[0214] If the type of the RF electrode to be simulated is a lithium niobate modulator electrode, the voltage V is:

[0215] V = ∫dxE x

[0216] The calculation formula of the electrode loss α is:

[0217] α=Im(k z )

[0218] Among them, k z is the eigenvalue, k0 is the vacuum wave vector, E x is the x-direction component of the electric field, E y is the y-direction component of the electric field, H x is the x-direction component of the magnetic field, H y is the y-direction component of the magnetic field.

[0219] In the embodiments of the present invention, resource consumption can be reduced and simulation speed can be accelerated.

[0220] An embodiment of the present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the following method when executing the computer program: the method is applied to a periodic electrode, and the method includes: establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; establishing a simulation model according to the three-dimensional electrode model; performing simulation according to the simulation model and a first formula to obtain multiple design parameter groups; obtaining simulation results of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula, and a screening condition; wherein the three-dimensional electrode model includes: boundary conditions and a preset number of periodic electrodes, wherein the preset number of periods is one period or half a period.

[0221] An embodiment of the present invention also provides a computer-readable storage medium having a computer program stored thereon, wherein the computer program implements the following method when executed by a processor: the method is applied to a periodic electrode, and the method includes: establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; establishing a simulation model according to the three-dimensional electrode model; performing simulation according to the simulation model and a first formula to obtain multiple design parameter groups; obtaining simulation results of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and screening conditions; wherein the three-dimensional electrode model includes: boundary conditions and a preset number of periodic electrodes, and the preset number of periods is one period or half a period.

[0222] The above-mentioned radio frequency electrode simulation method achieves the beneficial effect of being able to solve the technical problems raised in the background technology.

[0223] Figure 2 FIG. 1 is a flow chart of a radio frequency electrode simulation method in one embodiment. It should be understood that although Figure 2 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 2 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0224] Fig. 9 The internal structure diagram of a computer device in one embodiment is shown. The computer device may specifically be Figure 1 The server 120 in FIG. Fig. 9 As shown, the computer device includes a processor, a memory, a network interface, an input device and a display screen connected through a system bus. Among them, the memory includes a non-volatile storage medium and an internal memory. The non-volatile storage medium of the computer device stores an operating system and may also store a computer program, which, when executed by the processor, enables the processor to implement a radio frequency electrode simulation method. The internal memory may also store a computer program, which, when executed by the processor, enables the processor to execute a radio frequency electrode simulation method. The display screen of the computer device may be a liquid crystal display or an electronic ink display screen, and the input device of the computer device may be a touch layer covered on the display screen, or a button, trackball or touchpad provided on the housing of the computer device, or an external keyboard, touchpad or mouse, etc.

[0225] Those skilled in the art will understand that Fig. 9 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present invention, and does not constitute a limitation on the computer device to which the solution of the present invention is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0226] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiments can be completed by instructing the relevant hardware through a computer program, and the program can be stored in a non-volatile computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided by the present invention can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0227] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0228] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A radio frequency electrode simulation method, characterized in that: The method is applied to a periodic electrode, and the method comprises: Establish a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; Establishing a simulation model according to the three-dimensional electrode model; Perform simulation according to the simulation model and the first formula to obtain multiple design parameter groups; Acquire a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition; Wherein, the three-dimensional electrode model includes: boundary conditions and electrodes of a preset number of periods, and the preset number of periods is one period or half a period.

2. The method according to claim 1, characterized in that If the type of the radio frequency electrode to be simulated is an antisymmetric electrode, the three-dimensional electrode model includes: Four periodic boundary conditions, two PEC boundary conditions and an electrode of one-half period, wherein the electrode simulation region of the simulation model corresponding to the antisymmetric electrode is an electrode of one-half period; If the type of the radio frequency electrode to be simulated is a symmetrical electrode, the three-dimensional electrode model includes: Four periodic boundary conditions, two PMC boundary conditions and electrodes of one-half period, the simulation area of ​​the simulation model is the electrodes of one-half period, and the electrode simulation area of ​​the simulation model corresponding to the symmetric electrode is the electrodes of one-half period; If the type of the radio frequency electrode to be simulated is an asymmetric electrode, the three-dimensional electrode model includes: There are six periodic boundary conditions and one periodic electrode, and the electrode simulation area of ​​the simulation model corresponding to the asymmetric electrode is one periodic electrode.

3. The method according to claim 2, characterized in that The three-dimensional electrode model is established according to the type of radio frequency electrode to be simulated, including: According to the three-dimensional electrode model and the material of the radio frequency electrode to be simulated, obtaining a partition of a simulation area of ​​the electrode; Obtaining material parameters of each of the partitions; According to the partitions and material parameters of the partitions, obtaining equivalent parameters of each of the partitions; Acquiring the boundary condition according to the boundary surface of the three-dimensional electrode model; The three-dimensional electrode model is established according to the equivalent parameters of the partitions and the boundary conditions.

4. The method according to claim 3, characterized in that The partitioning of the simulation area of ​​the electrode includes PN junction and / or thin layer partitioning, The obtaining of equivalent parameters of each partition includes: Obtaining equivalent parameters of the PN junction and / or obtaining equivalent parameters of the thin layer partition; The obtaining of the equivalent parameters of the PN junction includes the following steps: The conductivity σ of the equivalent area of ​​the N++ partition of the PN junction NN for: The conductivity σ of the equivalent area of ​​the P++ partition of the PN junction PP for: Among them, R NNs is the sheet resistance of the N++ partition of the PN junction, t NN is the thickness of the N++ partition of the PN junction, R PPs is the sheet resistance of the P++ partition of the PN junction, t PP is the thickness of the P++ partition of the PN junction; The dielectric constant ε of the equivalent area of ​​the PN partition of the PN junction PN for: N conductivity σ of the equivalent area of ​​the PN partition of the PN junction N for: The P conductivity σ of the equivalent area of ​​the PN partition of the PN junction P for: Among them, w PN is the width of the PN junction depletion region, C PN is the PN junction capacitance, t s is the thickness of the equivalent RF material after conversion, L s is the length extending in the direction perpendicular to the PN junction cross section set in the semiconductor simulation, w N R is the width of the remaining area of ​​the N region of the PN junction minus the depletion region. N is the N region resistance of the PN junction, w P R is the width of the remaining area of ​​the P region of the PN junction minus the depletion region. P is the P region resistance of the PN junction.

5. The method according to claim 4, characterized in that The step of obtaining the equivalent parameters of the thin layer partition comprises: converting the volume integral of the region into a surface integral; The conversion of the volume integral of the thin layer partition into the surface integral is carried out in the following manner: e re =e r -s / (ω rf e0), Where k0 is the vacuum wave vector, w is the test function of u, u is the Bloch mode field of the electric field, ε re is the equivalent dielectric constant distribution of the material, ε r is the dielectric constant distribution of the material, σ is the conductivity distribution of the material, ω rf is the angular frequency of the radio frequency, ε0 ​​is the vacuum dielectric constant, i is the imaginary unit, Ω represents the thin layer partition, S represents the bottom surface of the thin layer partition, t S (x,z) is the thickness distribution of the thin layer partition, is the dielectric constant of silicon oxide.

6. The method according to claim 1, characterized in that The step of performing simulation according to the simulation model and the first formula to obtain multiple design parameter groups includes: Obtain multiple electrode size groups; Calculate a design parameter group corresponding to each electrode size group according to the multiple electrode size groups, the simulation model and the first formula; The design parameter group includes: periodic electrode phase refractive index n r , periodic RF electrode characteristic impedance Z c and electrode loss α.

7. The method according to claim 6, characterized in that The screening conditions are: Periodic RF electrode characteristic impedance Z c Within the preset range, and the periodic RF electrode phase refractive index n r Equal to the group refractive index n of the optical waveguide g ; The obtaining the simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition includes: Acquire the design parameter group that meets the screening condition as a design parameter group to be selected; From the candidate design parameter groups, the one with the smallest electrode loss α is selected as the simulation result.

8. A radio frequency electrode simulation device, characterized in that: The device comprises: An electrode model unit, used for establishing a three-dimensional electrode model according to the type of radio frequency electrode to be simulated; A simulation model unit, used for establishing a simulation model according to the three-dimensional electrode model; A parameter unit, used to perform simulation according to the simulation model and the first formula to obtain multiple design parameter groups; A simulation unit, configured to obtain a simulation result of the radio frequency electrode to be simulated according to the multiple design parameter groups, the first formula and the screening condition; Wherein, the three-dimensional electrode model includes: boundary conditions and electrodes of a preset number of periods, and the preset number of periods is one period or half a period.

9. A computer device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the method according to any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 7 is implemented.

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