Low-voltage high-energy SiC semiconductor material for ignition electric nozzle and preparation method of low-voltage high-energy SiC semiconductor material

Abstract

The invention discloses a low-voltage high-energy SiC semiconductor material for an ignition electric nozzle and a preparation method thereof, in the components for preparing the low-voltage high-energy SiC semiconductor material, silicon carbide SiC is used as a main component of a raw material, alumina Al2O3 and zirconia ZrO2 are used as reinforced phase oxides, and La2O3 series rare earth is used as a composite sintering aid; all the components are uniformly mixed to form a raw material; after the raw materials are subjected to compression molding under the pressing pressure of 150 Mpa and pressure maintaining for 1 min, the raw materials are subjected to heat preservation for a preset time at a preset temperature under the protection of high-purity argon and are combined with buried powder for sintering, and the final low-pressure high-energy SiC semiconductor part is obtained. According to the technical scheme, the SiC semiconductor material with excellent high-temperature resistance, corrosion resistance, mechanical property and electrical property is provided aiming at the requirements of the working environment of the ignition electric nozzle on corrosion resistance and thermal shock resistance, so that the SiC semiconductor material is suitable for the ignition electric nozzle.

Description

Technical Field

[0001] The present invention relates to the field of inorganic non-metallic material technology, but is not limited thereto, and in particular to a low-voltage high-energy SiC semiconductor material for an ignition nozzle and a preparation method thereof. Background Art

[0002] like Figure 1 The schematic diagram of the ignition nozzle and its working environment is shown. As a key component in the ignition system, the ignition nozzle needs to be installed in the engine combustion chamber.

[0003] The working environment of the ignition nozzle is harsh. It needs to be exposed to the high and ultra-high temperature environment of the engine combustion chamber for a long time. It also faces the cold and hot shock caused by the rapid inhalation of cold air in the high-altitude environment and the strong thermal shock when the engine is working. The material performance of the ignition nozzle is crucial to the overall level of the aircraft engine. Summary of the invention

[0004] Purpose of the present invention: In order to solve the above technical problems, the embodiments of the present invention provide a low-pressure, high-energy SiC semiconductor material for an ignition nozzle and a preparation method thereof. In view of the requirements of the working environment of the ignition nozzle for corrosion resistance and thermal shock resistance, a SiC semiconductor material with high temperature resistance, corrosion resistance, excellent mechanical properties and electrical properties is proposed to be suitable for the ignition nozzle.

[0005] Technical solution of the present invention: In the first aspect, the embodiment of the present invention provides a low-pressure high-energy SiC semiconductor material for an ignition nozzle and a preparation method thereof. The components used to prepare the low-pressure high-energy SiC semiconductor material include silicon carbide SiC as the main raw material component, aluminum oxide Al2O3 and zirconium oxide ZrO2 as reinforcing phase oxides, and La2O3-based rare earth as a composite sintering aid; the mass proportions of the components of the raw materials are respectively:

[0006]

[0007]

[0008] The sum of the mass proportions of the above components is 100%.

[0009] Optionally, in the low-pressure high-energy SiC semiconductor material for an ignition nozzle as described above, the components and mass proportions of the composite sintering aid are respectively:

[0010]

[0011] The sum of the mass proportions of the above components is 100%.

[0012] Optionally, in the low-pressure high-energy SiC semiconductor material for an ignition nozzle as described above,

[0013] The various components used to prepare the low-pressure high-energy SiC semiconductor material are uniformly mixed to form a raw material; the raw material is used for compression molding under a pressing pressure of 150Mpa, maintaining the pressure for 1 minute, and then sintering in combination with buried powder at a preset temperature for a preset time under the protection of high-purity argon to obtain the final low-pressure high-energy SiC semiconductor parts.

[0014] In a second aspect, an embodiment of the present invention further provides a method for preparing a low-pressure and high-energy SiC semiconductor material for an ignition nozzle, comprising:

[0015] Step 1, preparing La2O3 composite sintering aid;

[0016] Step 2: preparing the raw material of the low-pressure high-energy SiC semiconductor material based on the components of the low-pressure high-energy SiC semiconductor material.

[0017] Optionally, in the method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle as described above, step 1 comprises:

[0018] Step 1.1, various materials are weighed in sequence using a balance according to the composition and mass ratio as shown in claim 2 or 3, and the materials are placed in a corundum ball mill, and the mass ratio is material: 95 porcelain ball: distilled water = 1:2:1, and the loading factor is 0.7, and the ball milling is performed for 6 hours;

[0019] Step 1.2, unload and separate the slurry and porcelain balls through a 20-mesh sieve, put them into an enamel tray and place them in a drying oven, heat the oven to 120°C ± 10°C, dry for 12h to 15h, and turn off the power to cool naturally after drying;

[0020] Step 1.3, crush the powder with a stainless steel shovel, pass it through an 80-mesh sieve, put it into a corundum crucible and compact it, place the corundum crucible in an electric furnace, heat it to 1100°C ± 10°C with the furnace, keep it warm for 6 hours, turn off the power and cool it naturally, take out the corundum crucible, manually separate the material blocks, remove foreign matter and impurities, and break it into blocks no larger than 20 mm;

[0021] Step 1.4, use a stainless steel shovel to load the material into the corundum ball mill, according to the mass ratio of material: 95 porcelain ball: distilled water = 1:2:0.8, the loading factor is 0.6, and the ball milling is carried out for 24 hours;

[0022] Step 1.5, unload and separate the slurry and porcelain balls, pass them through a 20-mesh sieve, put them into an enamel tray, place them in a drying oven, heat the oven to 120°C ± 10°C, dry them for 12h to 15h, crush the materials with a stainless steel shovel and pass them through a 200-mesh sieve to prepare a La2O3 composite sintering aid.

[0023] Optionally, in the method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle as described above, step 2 comprises:

[0024] Step 2.1, weigh the materials in order according to the composition and mass ratio of the low-pressure high-energy SiC semiconductor material, place them in a corundum ball mill, and perform ball milling for 48 hours at a mass ratio of material: rubber ball = 1:1 and a loading factor of 0.5;

[0025] Step 2.2, manually scrape the sliced ​​paraffin into fine particles using a grinder, pass through a 20-mesh sieve and put into a beaker;

[0026] Step 2.3, forming a plasticized mixed material, comprising: weighing each material in turn according to the ratio of the plasticized mixed material, evenly distributing the ratio of the SiC semiconductor mixed material and the paraffin wax by weight of the material, placing the material in an enamel tray with a layer of material and a layer of paraffin wax, stirring evenly, and sieving twice with a 20-mesh sieve; and the plasticized mixed material in one enamel tray shall not exceed 200g;

[0027] Step 2.4, keep warm for 10 minutes and stir evenly once, when the temperature of the drying oven returns to 80℃+10℃, keep warm for 5 minutes and stir evenly once, when the temperature of the drying oven returns to 80℃+10℃ again, keep warm for 5 minutes and stir evenly once, turn off the power to let the plasticized powder cool naturally in the drying oven, and put it into a beaker;

[0028] Step 2.5, weigh 200 g ± 1 g of the plasticized mixed material, put it into a mold, place the mold on a hydraulic press, adjust the pressure to 11.5 MPa to 11.7 MPa to press the block, hold the pressure for 2S to 4S, press the plasticized mixed material into a block, and then release the pressure and demold;

[0029] Step 2.6, place the pressed material block in a mortar, crush the material with a pestle, and pass it through a 20-mesh sieve;

[0030] Step 2.7, place the material in a mortar and crush the material with a pestle. The weight of the sieved material block each time should not exceed 200g. Sieve it with a 40-mesh sieve and a 160-mesh sieve. Take the plasticized mixed material under the 40-mesh sieve and on the 160-mesh sieve, sieve it until there is zero on the 40-mesh sieve, put it into a beaker, mark it, and age it for 24 hours.

[0031] Optionally, in the method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle as described above, the mass ratio of the plasticized mixed material in step 2.3 is:

[0032] SiC semiconductor mixed material; 90~95%;

[0033] Paraffin; 5-10%.

[0034] Optionally, the method for preparing the low-pressure and high-energy SiC semiconductor material of the ignition nozzle as described above further comprises:

[0035] Step 3, using the raw material of the low-pressure high-energy SiC semiconductor material prepared in step 2, forming a low-pressure high-energy SiC semiconductor part by pressing and sintering.

[0036] Optionally, in the method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle as described above, step 3 comprises:

[0037] Step 3.1, pouring a proper amount of raw materials of SiC semiconductor material into a stainless steel mold, maintaining the pressure at 150 MPa for 1 minute, and pressing into shape;

[0038] Step 3.2, burying the pressed SiC semiconductor parts in a silicon carbide sagger filled with filler, wherein the filler is prepared by uniformly mixing SiC semiconductor ignition material green body raw material powder and BN powder in a volume ratio of 1 / 1; under the protection of high-purity argon, heating to 1750℃±10℃, keeping warm for 20min, turning off the power and cooling with the furnace, and taking out of the furnace at 150℃.

[0039] Beneficial effects of the present invention: The present invention provides a low-pressure, high-energy SiC semiconductor material for an ignition nozzle and a preparation method thereof, with silicon carbide SiC as the main raw material component, aluminum oxide Al2O3 and zirconium oxide ZrO2 as reinforcing phase oxides, and La2O3 rare earth as a composite sintering aid; the raw material of the low-pressure, high-energy SiC semiconductor material is formed by compression molding under a pressing pressure of 150Mpa and holding the pressure for 1 minute, and then sintering is performed in combination with buried powder under the protection of high-purity argon at a preset temperature for a preset time to obtain the final low-pressure, high-energy SiC semiconductor parts. The low-pressure, high-energy SiC semiconductor material provided by the present invention has good comprehensive performance, with a flexural strength of up to 225-280Mpa, 800℃-1000℃; a linear expansion coefficient of (4.00-5.6)×10 -6 / ℃(25℃~1000℃); volume resistivity<0.3MΩ·cm; when using general product fixtures and test conditions, the minimum discharge voltage is 900V at normal pressure, and the minimum discharge voltage is 1200V under kerosene dripping and 1.5 atmospheres.

[0040] The low-voltage and high-energy SiC semiconductor material prepared by the embodiment of the present invention has high electrical corrosion resistance, chemical resistance, and good thermal shock resistance. It has been verified that the reliable service life in complex environments can reach more than 1.5 million cumulative sparks. In addition, the low-voltage and high-energy SiC semiconductor material prepared by the embodiment of the present invention is not only suitable for preparing aviation low-voltage and high-energy semiconductor nozzles, but also suitable for preparing other civilian ignition fields, such as automobiles, petrochemicals, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The accompanying drawings are used to provide a further understanding of the technical solution of the present invention and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present invention and do not constitute a limitation on the technical solution of the present invention.

[0042] Figure 1 A flow chart of a method for preparing a low-pressure and high-energy SiC semiconductor material for an ignition nozzle provided in an embodiment of the present invention;

[0043] Figure 2 This is a schematic diagram of a SiC semiconductor part manufactured using the low-pressure and high-energy SiC semiconductor material provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other arbitrarily without conflict.

[0045] As described in the above background technology, the working environment of the ignition nozzle installed in the engine combustion chamber is harsh. Therefore, the material properties of the ignition nozzle are crucial to the overall performance of the aircraft engine.

[0046] In view of the requirements of the working environment of the ignition nozzle for corrosion resistance and thermal shock resistance, the embodiment of the present invention provides a low-pressure and high-energy SiC semiconductor material for an ignition nozzle and a preparation method thereof, using silicon carbide SiC as the raw material, adding reinforcing phase oxide, and high-temperature sintering to prepare a SiC semiconductor material with high temperature resistance, corrosion resistance, excellent mechanical properties and electrical properties.

[0047] The present invention provides the following specific embodiments which can be combined with each other. The same or similar concepts or processes may not be described in detail in some embodiments.

[0048] The embodiment of the present invention provides a low-pressure high-energy SiC semiconductor material for an ignition nozzle. The composition of the low-pressure high-energy SiC semiconductor material provided by the embodiment of the present invention includes silicon carbide SiC as the main raw material component, aluminum oxide Al2O3 and zirconium oxide ZrO2 as reinforcing phase oxides, and La2O3 rare earth as a composite sintering aid. The above-mentioned powders are mixed evenly to form raw materials. The raw materials are molded under a pressing pressure of 150Mpa for 1 minute, and then buried and sintered at 1750°C for 40 minutes under the protection of high-purity argon gas to obtain the final product.

[0049] As shown in Table 1 below, the components and mass ratios of the low-pressure high-energy SiC semiconductor material for an ignition nozzle provided in an embodiment of the present invention are shown.

[0050] Table 1 Composition and formula of silicon carbide SiC semiconductor materials

[0051]

[0052]

[0053] As shown in Table 2 below, the composition and mass ratio of the La2O3 composite sintering aid in the embodiment of the present invention are shown.

[0054] Table 2 Composition and formula of composite sintering aid

[0055] name Chemical formula Mass ratio (wt.%) Lanthanum Oxide <![CDATA[La2O3]]> 40～50 Silicon dioxide <![CDATA[SiO2]]> 35～45 Magnesium oxide MgO 2～5 Sodium carbonate <![CDATA[Na2CO3]]> 2～5 Calcium Oxide CaO 2～5 Strontium carbonate <![CDATA[SrCO3]]> 5～10 Yttrium Oxide <![CDATA[Y2O3]]> 2～5

[0056] Based on the raw material components and mass ratios of the low-pressure high-energy SiC semiconductor material for an ignition nozzle provided in the above-mentioned embodiment of the present invention, the embodiment of the present invention also provides a method for preparing the low-pressure high-energy SiC semiconductor material for an ignition nozzle, such as Figure 1 FIG. 1 is a flow chart of a method for preparing a low-pressure high-energy SiC semiconductor material for an ignition nozzle provided by an embodiment of the present invention. The preparation method provided by an embodiment of the present invention comprises the following steps:

[0057] Step 1, preparing La2O3 composite sintering aid;

[0058] Step 2: preparing the raw material of the low-pressure high-energy SiC semiconductor material based on the components of the low-pressure high-energy SiC semiconductor material.

[0059] Furthermore, the raw material of the low-pressure high-energy SiC semiconductor material prepared by the above step 2 in the embodiment of the present invention is used to prepare low-pressure high-energy SiC semiconductor material parts, that is, the preparation method provided by the present invention also includes:

[0060] Step 3, using the raw material of low-pressure high-energy SiC semiconductor material, forming a low-pressure high-energy SiC semiconductor part by pressing and sintering.

[0061] The specific preparation process of the method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle provided in the embodiment of the present invention is described as follows.

[0062] (1) preparing a La2O3 composite sintering aid; comprising the following steps:

[0063] 1.1. Various materials were weighed in sequence using a balance according to the formula shown in Table 2. The materials were placed in a corundum ball mill at a ratio of material: 95 porcelain ball: distilled water (mass ratio) = 1:2:1 and a loading factor of 0.7, and the milling was carried out for 6 hours.

[0064] 1.2. Unload and separate the slurry and porcelain balls through a 20-mesh sieve, put them into an enamel tray and place them in a drying oven. Heat the oven to 120℃±10℃ and dry for 12h~15h. After drying, turn off the power and cool naturally.

[0065] 1.3. Use a stainless steel shovel to crush the powder, pass it through an 80-mesh sieve, put it into a corundum crucible and compact it. Place the corundum crucible in an electric furnace, heat it up to 1100℃±10℃ with the furnace, keep it warm for 6 hours, turn off the power and cool it naturally, take out the corundum crucible, separate the material blocks manually, remove foreign matter and impurities, break it into blocks no larger than 20mm, and put it into an enamel tray.

[0066] 1.4. Use a stainless steel shovel to load the material into the corundum ball mill, according to the material: 95 porcelain ball: distilled water (mass ratio) = 1:2:0.8, the loading factor is 0.6, and the ball mill is carried out for 24 hours.

[0067] 1.5. Unload and separate the slurry and porcelain balls, pass them through a 20-mesh sieve, put them into an enamel tray, place them in a drying oven, heat the oven to 120℃±10℃, dry them for 12h~15h, crush the materials with a stainless steel shovel, pass them through a 200-mesh sieve, put them into a wide-mouth bottle, and mark them.

[0068] (2) preparing raw materials for SiC semiconductor materials;

[0069] 2.1. According to the formula in (Table 1), weigh each material in turn, place it in a corundum ball mill, and carry out ball milling for 48 hours at a material: rubber ball (mass ratio) of 1:1 and a loading factor of 0.5.

[0070] 2.2. Scrape the sliced ​​paraffin into fine particles manually with a grinder, pass through a 20-mesh sieve and put into a beaker.

[0071] 2.3. Weigh each material in accordance with the proportions shown in Table 3 below, evenly distribute the SiC semiconductor mixed material and paraffin wax by weight, place a layer of material and a layer of paraffin wax in an enamel dish, stir evenly, and sieve twice with a 20-mesh sieve; and the amount of plasticized mixed material in one enamel dish (or stainless steel dish) shall not exceed 200g.

[0072] Table 3 Plasticized mixed material formula

[0073] Serial number name Mass ratio (%) 1 SiC semiconductor mixed materials 90～95 2 paraffin 5～10

[0074] 2.4. Place the mixed plasticized mixed powder in a drying oven and heat it to 80℃+10℃. Keep it warm for 10 minutes and stir it evenly. When the temperature of the drying oven returns to 80℃+10℃, keep it warm for 5 minutes and stir it evenly. When the temperature of the drying oven returns to 80℃+10℃ again, keep it warm for 5 minutes and stir it evenly. Turn off the power to let the plasticized powder cool naturally in the drying oven and put it into a beaker.

[0075] 2.5. Weigh 200g±1g of the plasticized mixture and put it into the mold with a stainless steel shovel. Place the mold on a hydraulic press and adjust the pressure to 11.5MPa~11.7MPa to press the block. Maintain the pressure for 2S~4S. After the plasticized mixture is pressed into a block, release the pressure and demould.

[0076] 2.6. Place the pressed material in a mortar, crush the material with a pestle, and pass it through a 20-mesh sieve.

[0077] 2.7. Place the material in a mortar and crush it with a pestle. The weight of the sieved material should not exceed 200g each time. Sieve it with a 40-mesh sieve and a 160-mesh sieve. Take the plasticized mixed material under the 40-mesh sieve and on the 160-mesh sieve, sieve it until the plasticized mixed material on the 40-mesh sieve is zero, put it into a beaker, mark it, and age it for 24 hours.

[0078] (3) Preparation of SiC semiconductor products;

[0079] 3.1. Pour an appropriate amount of raw materials of SiC semiconductor material into a stainless steel mold, maintain the pressure at 150Mpa for 1 minute, and press into shape.

[0080] 3.2, bury the pressed SiC semiconductor parts in a silicon carbide sagger filled with fillers, the fillers are prepared by mixing SiC semiconductor ignition material green body raw material powder and BN powder in a 1 / 1 volume ratio. Under the protection of high-purity argon, heat up to 1750℃±10℃, keep warm for 20min, turn off the power and cool down with the furnace, and take out of the furnace at 150℃.

[0081] like Figure 2 , which is a schematic diagram of a SiC semiconductor part prepared using the low-pressure and high-energy SiC semiconductor material provided by an embodiment of the present invention.

[0082] The low-pressure high-energy SiC semiconductor material and preparation method for the ignition nozzle provided in the embodiment of the present invention use silicon carbide SiC as the main raw material component, aluminum oxide Al2O3 and zirconium oxide ZrO2 as reinforcing phase oxides, and La2O3 rare earth as a composite sintering aid to form the raw material of the low-pressure high-energy SiC semiconductor material. The raw material is molded under a pressing pressure of 150Mpa and maintained for 1 minute. Then, under the protection of high-purity argon, it is kept at a preset temperature for a preset time and combined with buried powder for sintering to obtain the final low-pressure high-energy SiC semiconductor parts. The low-pressure high-energy SiC semiconductor material provided in the embodiment of the present invention has good comprehensive performance, with a flexural strength of up to 225-280Mpa, 800℃-1000℃; a linear expansion coefficient of (4.00-5.6)×10 -6 / ℃(25℃~1000℃); volume resistivity<0.3MΩ·cm; when using general product fixtures and test conditions, the minimum discharge voltage is 900V at normal pressure, and the minimum discharge voltage is 1200V under kerosene dripping and 1.5 atmospheres.

[0083] The low-voltage and high-energy SiC semiconductor material prepared by the embodiment of the present invention has high electrical corrosion resistance, chemical resistance, and good thermal shock resistance. It has been verified that the reliable service life in complex environments can reach more than 1.5 million cumulative sparks. In addition, the low-voltage and high-energy SiC semiconductor material prepared by the embodiment of the present invention is not only suitable for preparing aviation low-voltage and high-energy semiconductor nozzles, but also suitable for preparing other civilian ignition fields, such as automobiles, petrochemicals, etc.

[0084] Although the embodiments disclosed in the present invention are as above, the contents are only embodiments adopted to facilitate understanding of the present invention and are not intended to limit the present invention. Any technician in the field to which the present invention belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the present invention, but the patent protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A low-pressure, high-energy SiC semiconductor material for an ignition nozzle, characterized in that: The components used to prepare the low-pressure high-energy SiC semiconductor material include silicon carbide SiC as the main raw material component, aluminum oxide Al2O3 and zirconium oxide ZrO2 as reinforcing phase oxides, and La2O3-based rare earth as a composite sintering aid; the mass proportions of the raw material components are as follows: The sum of the mass proportions of the above components is 100%.

2. The low-pressure and high-energy SiC semiconductor material for an ignition nozzle according to claim 1, characterized in that: The components and mass proportions of the composite sintering aid are: The sum of the mass proportions of the above components is 100%.

3. The low-pressure and high-energy SiC semiconductor material for an ignition nozzle according to claim 2, characterized in that: The various components used to prepare the low-pressure high-energy SiC semiconductor material are uniformly mixed to form a raw material; the raw material is used for compression molding under a pressing pressure of 150Mpa, maintaining the pressure for 1 minute, and then sintering in combination with buried powder at a preset temperature for a preset time under the protection of high-purity argon to obtain the final low-pressure high-energy SiC semiconductor parts.

4. A method for preparing a low-pressure high-energy SiC semiconductor material for an ignition nozzle, characterized in that: include: Step 1, preparing La2O3 composite sintering aid; Step 2: preparing the raw material of the low-pressure high-energy SiC semiconductor material based on the components of the low-pressure high-energy SiC semiconductor material.

5. The method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle according to claim 4, characterized in that: The step 1 comprises: Step 1.1, various materials are weighed in sequence using a balance according to the composition and mass ratio as shown in claim 2 or 3, and the materials are placed in a corundum ball mill, and the mass ratio is material: 95 porcelain ball: distilled water = 1:2:1, and the loading factor is 0.7, and the ball milling is performed for 6 hours; Step 1.2, unload and separate the slurry and porcelain balls through a 20-mesh sieve, put them into an enamel tray and place them in a drying oven, heat the oven to 120°C ± 10°C, dry for 12h to 15h, and turn off the power to cool naturally after drying; Step 1.3, crush the powder with a stainless steel shovel, pass it through an 80-mesh sieve, put it into a corundum crucible and compact it, place the corundum crucible in an electric furnace, heat it to 1100°C ± 10°C with the furnace, keep it warm for 6 hours, turn off the power and cool it naturally, take out the corundum crucible, manually separate the material blocks, remove foreign matter and impurities, and break it into blocks no larger than 20 mm; Step 1.4, use a stainless steel shovel to load the material into the corundum ball mill, according to the mass ratio of material: 95 porcelain ball: distilled water = 1:2:0.8, the loading factor is 0.6, and the ball milling is carried out for 24 hours; Step 1.5, unload and separate the slurry and porcelain balls, pass them through a 20-mesh sieve, put them into an enamel tray, place them in a drying oven, heat the oven to 120°C ± 10°C, dry them for 12h to 15h, crush the materials with a stainless steel shovel and pass them through a 200-mesh sieve to prepare a La2O3 composite sintering aid.

6. The method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle according to claim 4, characterized in that: The step 2 comprises: Step 2.1, weigh the materials in order according to the composition and mass ratio of the low-pressure high-energy SiC semiconductor material, place them in a corundum ball mill, and perform ball milling for 48 hours at a mass ratio of material: rubber ball = 1:1 and a loading factor of 0.5; Step 2.2, manually scrape the sliced ​​paraffin into fine particles using a grinder, pass through a 20-mesh sieve and put into a beaker; Step 2.3, forming a plasticized mixed material, comprising: weighing each material in turn according to the ratio of the plasticized mixed material, evenly distributing the ratio of the SiC semiconductor mixed material and the paraffin wax by weight of the material, placing the material in an enamel tray with a layer of material and a layer of paraffin wax, stirring evenly, and sieving twice with a 20-mesh sieve; and the plasticized mixed material in one enamel tray shall not exceed 200g; Step 2.4, keep warm for 10 minutes and stir evenly once, when the temperature of the drying oven returns to 80℃+10℃, keep warm for 5 minutes and stir evenly once, when the temperature of the drying oven returns to 80℃+10℃ again, keep warm for 5 minutes and stir evenly once, turn off the power to let the plasticized powder cool naturally in the drying oven, and put it into a beaker; Step 2.5, weigh 200 g ± 1 g of the plasticized mixed material, put it into a mold, place the mold on a hydraulic press, adjust the pressure to 11.5 MPa to 11.7 MPa to press the block, hold the pressure for 2S to 4S, press the plasticized mixed material into a block, and then release the pressure and demold; Step 2.6, place the pressed material block in a mortar, crush the material with a pestle, and pass it through a 20-mesh sieve; Step 2.7, place the material in a mortar and crush the material with a pestle. The weight of the sieved material block each time should not exceed 200g. Sieve it with a 40-mesh sieve and a 160-mesh sieve. Take the plasticized mixed material under the 40-mesh sieve and on the 160-mesh sieve, sieve it until there is zero on the 40-mesh sieve, put it into a beaker, mark it, and age it for 24 hours.

7. The method for preparing the low-pressure and high-energy SiC semiconductor material for the ignition nozzle according to claim 6, characterized in that: The mass ratio of the plasticized mixed material in step 2.3 is: SiC semiconductor mixed material; 90~95%; Paraffin; 5-10%.

8. The method for preparing a low-pressure high-energy SiC semiconductor material for an ignition nozzle according to any one of claims 4 to 7, characterized in that: Also includes: Step 3, using the raw material of the low-pressure high-energy SiC semiconductor material prepared in step 2, forming a low-pressure high-energy SiC semiconductor part by pressing and sintering.

9. The method for preparing the low-pressure and high-energy SiC semiconductor material for an ignition nozzle according to claim 8, characterized in that: The step 3 comprises: Step 3.1, pouring a proper amount of raw materials of SiC semiconductor material into a stainless steel mold, maintaining the pressure at 150 MPa for 1 minute, and pressing into shape; Step 3.2, burying the pressed SiC semiconductor parts in a silicon carbide sagger filled with filler, wherein the filler is prepared by uniformly mixing SiC semiconductor ignition material green body raw material powder and BN powder in a volume ratio of 1 / 1; under the protection of high-purity argon, heating to 1750℃±10℃, keeping warm for 20min, turning off the power and cooling with the furnace, and taking out of the furnace at 150℃.

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