Preparation method and application of laminated chip inductor

Abstract

The invention belongs to the field of electronic elements, and particularly discloses a preparation method and application of a laminated chip inductor. The preparation method comprises the following steps: S1, enabling ceramic slurry to form a film, and then sequentially carrying out punching, inner electrode slurry printing, lamination and press-cutting treatment to obtain a laminated body; s2, discharging glue from the laminated body, pre-sintering at 400-500 DEG C for 0.2-0.3 h, then cooling, and then coating two ends of the laminated body with external electrode slurry to obtain a pre-sintered green body; s3, carrying out primary sintering on the pre-sintered green body at the temperature of 200 to 500 DEG C for 0.5 to 2.5 hours; and carrying out secondary sintering at 600-900 DEG C for 0.5-2 hours, and then cooling at a cooling rate of 10-20 DEG C / min to obtain the laminated chip inductor. The ceramic body of the laminated chip inductor prepared through the preparation method is good in compactness, the adhesive force is larger than 5 N, and the tensile force is larger than 18 N.

Description

Technical Field

[0001] The invention belongs to the field of electronic components, and in particular relates to a preparation method of a laminated chip inductor and an application thereof. Background Art

[0002] The preparation method of the laminated chip inductor is mainly to print the coil on the ferrite or ceramic body, stack multiple coil layers, press and seal the coil layer, sinter the coil layer to obtain a laminated body, and finally form external electrodes at both ends of the sintered laminated body. The specific process flow includes batching, casting, punching, printing, lamination, pressing and cutting, degumming, sintering, chamfering, silver sticking, silver burning, electroplating, testing and packaging, and factory inspection. In the traditional process flow, the pressed green body is sintered and then coated with external electrodes for silver burning. Therefore, two sintering processes are usually required, the preparation process is relatively cumbersome, and there is a problem of weak bonding between the external electrode terminal and the laminated body. Summary of the invention

[0003] In order to overcome at least one technical problem existing in the above-mentioned prior art, one of the objectives of the present invention is to provide a method for preparing a multilayer chip inductor.

[0004] A second object of the present invention is to provide an application of the method for preparing the multilayer chip inductor in preparing ceramic electronic products.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is:

[0006] A first aspect of the present invention provides a method for preparing a multilayer chip inductor, comprising the following steps:

[0007] S1: forming a ceramic slurry into a film, and then performing punching, printing of internal electrode slurry, lamination, and pressing and cutting in sequence to obtain a laminate;

[0008] S2: debinding the laminate, then heating the laminate to 400-500°C at a rate not exceeding 15°C / min for pre-sintering for 0.2-0.3h, then cooling the laminate at a rate not exceeding 20°C / min, and then coating the laminate with an external electrode slurry at both ends to obtain a pre-sintered body;

[0009] S3: heating the pre-sintered body to 200-500°C at a rate not exceeding 10°C / min and sintering it for 0.5-2.5h; then heating it to 600-900°C at a rate not exceeding 15°C / min and sintering it for a second time for 0.5-2h, and then cooling it at a rate of 10-20°C / min to obtain the laminated chip inductor.

[0010] The preparation method of the present invention sets a pre-sintering step after the debinding step. The reason is that the sintering temperature of the stack is higher than the sintering temperature of the external electrode. In order to ensure the densification of the stack after co-firing, pre-sintering is required. In addition, the preparation method of the present invention divides the co-firing into two stages of sintering. The first sintering is low-temperature sintering, mainly to remove the resin in the external electrode. Secondly, in the range of 200 to 500°C, the glass powder in the external electrode and the glass on the contact surface of the pre-fired body begin to soften gradually, so that it has a certain bonding force. The secondary sintering step adopts high-temperature sintering. The glass in the pre-fired body and the glass in the external electrode will soften and overflow to the contact surface of the two to combine to achieve integrated sintering. Usually, the sintering temperature of the external electrode is lower than that of the pre-fired body. Therefore, the temperature, insulation time, heating and cooling process of the secondary sintering need to be strictly controlled.

[0011] Preferably, the drilling step in step S1 is: drilling holes in the film tape formed by the ceramic slurry by laser. The holes formed by the drilling need to be filled with a conductive slurry, such as an internal electrode slurry, to connect the internal electrodes in the laminated chip inductor.

[0012] Preferably, the step of printing the internal electrode slurry in step S1 is: forming a pattern with a specified design shape on a film tape formed by ceramic slurry by screen printing, so as to form a circuit or a component of a circuit, that is, to form an internal electrode.

[0013] In the present invention, the heating rate of the pre-sintering step does not exceed 15°C / min, for example, it can be selected from 1°C / min, 2°C / min, 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, 10°C / min, 11°C / min, 12°C / min, 13°C / min, 14°C / min, 15°C / min. Preferably, the heating rate of the pre-sintering step is 5 to 15°C / min. A too slow heating rate of the pre-sintering step does not affect the performance of the obtained multilayer chip inductor, but a too slow heating rate will result in a long production time and too high heat consumption, which is not conducive to improving production efficiency and reducing production costs.

[0014] In the present invention, the pre-sintering step is to pre-sinter at 400-500°C for 0.2-0.3h. For example, the sintering temperature can be selected from 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, 480°C, 490°C, and 500°C, and the sintering time can be selected from 0.2h, 0.21h, 0.22h, 0.23h, 0.24h, 0.25h, 0.26h, 0.27h, 0.28h, 0.29h, and 0.3h.

[0015] In the present invention, the cooling rate of the pre-sintering step does not exceed 20°C / min. For example, the cooling rate can be selected from 1°C / min, 2°C / min, 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, 10°C / min, 11°C / min, 12°C / min, 13°C / min, 14°C / min, 15°C / min, 16°C / min, 17°C / min, 18°C / min, 19°C / min, 20°C / min. Preferably, the cooling rate of the pre-sintering step is 10 to 20°C / min. If the cooling rate of the pre-sintering step is too slow, the performance of the obtained multilayer chip inductor will hardly be affected. However, if the cooling rate is too slow, the production time will be longer, which is not conducive to improving production efficiency and reducing production costs.

[0016] Preferably, the sintering atmosphere in the pre-sintering step is air.

[0017] Preferably, the debinding temperature in step S2 is 200-400°C, for example, can be selected from 200°C, 210°C, 220°C, 230°C, 240°C, 250°C, 260°C, 270°C, 280°C, 290°C, 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 360°C, 370°C, 380°C, 390°C, and 400°C.

[0018] Preferably, the debinding insulation time is 1 to 4 hours, for example, can be selected from 1 hour, 1.5 hours, 2 hours, 2.5 hours, 3 hours, 3.5 hours, and 4 hours.

[0019] Preferably, the heating rate of the debinding step is 3 to 10°C / min, for example, can be selected from 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, and 10°C / min.

[0020] Preferably, the debinding step is performed in air.

[0021] Preferably, the debinding step ensures that the carbon content in the stack does not exceed 10%. For example, the carbon content in the stack may be 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, or 10%.

[0022] In step S3 of the present invention, the heating rate of the primary sintering step does not exceed 10°C / min, for example, it can be selected from 1°C / min, 2°C / min, 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, 10°C / min; preferably, the heating rate of the primary sintering step is 5-10°C / min. A too slow heating rate of the primary sintering step does not affect the performance of the obtained multilayer chip inductor, but a too slow heating rate will result in a longer production time and too high heat consumption, which is not conducive to improving production efficiency and reducing production costs.

[0023] In the present invention, the primary sintering temperature is 200-500°C, for example, can be selected from 200°C, 210°C, 220°C, 230°C, 240°C, 250°C, 260°C, 270°C, 280°C, 290°C, 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 360°C, 370°C, 380°C, 390°C, 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, 460°C, 470°C, 480°C, 490°C, 500°C.

[0024] In the present invention, the holding time of the primary sintering step is 0.5 to 2.5 hours, for example, can be selected from 0.5 hours, 1 hour, 1.5 hours, 2 hours, and 2.5 hours.

[0025] Preferably, the sintering atmosphere in the primary sintering step is air.

[0026] In step S3 of the present invention, the heating rate of the secondary sintering step does not exceed 15°C / min, for example, it can be selected from 1°C / min, 2°C / min, 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min, 8°C / min, 9°C / min, 10°C / min, 11°C / min, 12°C / min, 13°C / min, 14°C / min, 15°C / min; preferably, the heating rate of the secondary sintering step is 5-15°C / min. A too slow heating rate of the secondary sintering step does not affect the performance of the obtained multilayer chip inductor, but a too slow heating rate will result in a longer production time and too high heat consumption, which is not conducive to improving production efficiency and reducing production costs.

[0027] In step S3 of the present invention, the sintering time of the secondary sintering step is 600-900°C, for example, can be selected from 600°C, 610°C, 620°C, 630°C, 640°C, 650°C, 660°C, 670°C, 680°C, 690°C, 700°C, 710°C, 720°C, 730°C, 740°C, 750°C, 760°C, 770°C, 780°C, 790°C, 800°C, 810°C, 820°C, 830°C, 840°C, 850°C, 860°C, 870°C, 880°C, 890°C, and 900°C.

[0028] In step S3 of the present invention, the secondary sintering holding time is 0.5 to 2 hours, for example, can be selected from 0.5 hours, 1 hour, 1.5 hours, and 2 hours.

[0029] In step S3 of the present invention, the cooling rate is 10 to 20°C / min, for example, can be selected from 10°C / min, 11°C / min, 12°C / min, 13°C / min, 14°C / min, 15°C / min, 16°C / min, 17°C / min, 18°C / min, 19°C / min, and 20°C / min.

[0030] Preferably, the sintering atmosphere in the secondary sintering step is air.

[0031] Preferably, the step of forming the ceramic slurry into a film in step S1 is: casting the ceramic slurry into a film and drying it, the casting rate is 0.05-0.2 m / s, the drying temperature is 40-60° C., and the drying time is 2-5 min.

[0032] In the present invention, the casting rate is 0.05 to 0.2 m / s, for example, can be selected from 0.05 m / s, 0.1 m / s, 0.15 m / s, and 0.2 m / s.

[0033] Preferably, the heating rate of the secondary sintering step is 3-7°C / min greater than the heating rate of the primary sintering step, for example, can be selected from 3°C / min, 4°C / min, 5°C / min, 6°C / min, 7°C / min.

[0034] Preferably, the ceramic slurry comprises the following components in percentage by mass: 10-20% Al2O3, 30-50% glass powder, 5-15% resin, 30-50% organic solvent, and 0-1% dispersant.

[0035] Preferably, the glass powder includes at least one of SiO2 and ZnO.

[0036] Preferably, the organic solvent in the ceramic slurry includes at least one of toluene, ethanol, ethyl acetate, propyl acetate, butanone and butanol.

[0037] Preferably, the internal electrode slurry comprises the following components in percentage by mass: 80-95% silver, 1-10% resin, 5-15% organic solvent, and 0-2% dispersant.

[0038] Preferably, the organic solvent in the inner electrode slurry includes at least one of terpineol, butyl carbitol and acetate.

[0039] Preferably, the external electrode slurry comprises the following components in percentage by mass: 50-70% silver, 5-20% metal oxide, 2-10% silicon oxide, 1-10% resin, 10-20% organic solvent, and 0-1% dispersant.

[0040] Preferably, the metal oxide comprises aluminum oxide, zirconium oxide and titanium oxide in a mass ratio of 1:(2-3):(3-5).

[0041] Preferably, the organic solvent in the external electrode slurry includes at least one of ethylene glycol monobutyl ether, terpineol, and butyl carbitol.

[0042] Preferably, the dispersant in the external electrode slurry includes at least one of phosphate ester, siloxane and polyvinyl alcohol.

[0043] The second aspect of the present invention provides the use of the method for preparing the multilayer chip inductor described in the first aspect of the present invention in preparing ceramic electronic products.

[0044] The beneficial effects of the present invention are as follows: the present invention optimizes the preparation method, arranges a pre-sintering step after the debinding step, and controls specific parameters of the pre-sintering step, the primary sintering step and the secondary sintering step, such as the heating rate, the sintering temperature, the sintering time and other parameters, to achieve co-firing of the pre-sintered green body and the external electrode. The preparation method is simple and easy to operate, and the ceramic body of the obtained laminated chip inductor has good density, high adhesion and tensile strength, with the adhesion being greater than 5N and the tensile strength being greater than 18N. DETAILED DESCRIPTION

[0045] The specific implementation of the present invention is further described in detail below in conjunction with examples, but the implementation and protection of the present invention are not limited thereto. It should be noted that if there are processes that are not particularly described in detail below, they can be implemented or understood by those skilled in the art with reference to the prior art. The reagents or instruments used that do not indicate the manufacturer are all conventional products that can be purchased commercially.

[0046] The specifications of the multilayer chip inductors prepared in the embodiments of the present invention and the comparative examples are metric 1005.

[0047] Example 1

[0048] This example provides a method for preparing a multilayer chip inductor, which specifically includes the following steps:

[0049] 1. Casting: Cast the ceramic slurry into a film tape at a casting speed of 0.2 m / s, a drying temperature of 60°C, and a drying time of 5 min to obtain a ceramic film tape.

[0050] The ceramic slurry is composed of the following components in percentage by mass: 15% Al2O3, 35% glass powder, 10% resin (ie methyl methacrylate), 39.5% organic solvent (ie toluene), and 0.5% dispersant (ie polymerized phosphate).

[0051] 2. Punching: Punch holes of the required size at the designed position on the ceramic membrane strip through laser drilling. The holes need to be filled with silver paste (i.e. internal electrode paste) through electrode printing in step 3 to form a connection between the electrodes spaced between the ceramic membrane strips.

[0052] 3. Printing: The inner electrode slurry is formed into a pattern with a specified design shape on the above-mentioned cast film tape by screen printing, so as to form a component of the circuit.

[0053] The internal electrode paste is composed of the following components in percentage by mass: 82% silver, 7% resin (ie ethyl cellulose), 10% organic solvent (ie butyl carbitol), and 1% dispersant (ie non-phthalate).

[0054] 4. Lamination: Films with different patterns are combined together by repeated lamination under certain temperature conditions to form a block with specified performance.

[0055] 5. Pressing and cutting: After the encapsulated blocks are hydrostatically pressed to have a certain strength, they are cut into green pieces of designed specifications and sizes.

[0056] 6. Debinding and pre-sintering: After the green body of the pressed and cut laminate is chamfered, debinding is carried out at a temperature of 300°C, with a heating rate of 7°C / min, in an air atmosphere, and kept warm for 3 hours to keep the residual carbon below 10%. Since the sintering temperature of the laminate is higher than the silver sintering temperature, pre-sintering is required to ensure the densification of the laminate after co-firing. Therefore, after debinding, the temperature is increased at a rate of 10°C / min to a pre-sintering temperature of 400°C for pre-sintering. The pre-sintering atmosphere is air, and after keeping warm for 0.2 hours, the temperature is lowered to room temperature at a rate of 15°C / min. The pre-sintered laminate is then implanted and the external electrode slurry is coated on both ends.

[0057] The external electrode slurry is composed of the following components in mass percentage: 60% silver, 13% metal oxide (wherein the mass ratio of aluminum oxide: zirconium oxide: titanium oxide is 1:2:3), 3.5% silicon oxide, 3% resin (ie ethyl cellulose), 20% organic solvent (ie pine alcohol), and 0.5% dispersant (ie polyvinyl alcohol).

[0058] 7. Co-firing

[0059] Co-firing is divided into two stages of sintering:

[0060] The first sintering is low-temperature sintering: the sintering atmosphere is air, the heating rate is 5°C / min, the sintering temperature is 450°C, and the holding time is 2h.

[0061] The secondary sintering is high-temperature sintering: the sintering temperature after the primary sintering is raised to 800°C at a rate of 10°C / min and kept in the high-temperature zone for 2 hours. The sintering atmosphere is air, and then the temperature is lowered to room temperature at a rate of 13°C / min to obtain the multilayer chip inductor in this example.

[0062] Embodiments 2 to 14

[0063] The only difference between the preparation methods of the multilayer chip inductors in Examples 2 to 14 and Example 1 is that the specific parameters of the debinding and pre-sintering steps in Step 6 are different, as shown in Table 1 below.

[0064] Embodiments 15 to 35

[0065] The only difference between the preparation methods of the multilayer chip inductors in Examples 15 to 35 and Example 1 is that the specific parameters of the co-firing step in Step 7 are different, as shown in Table 2 below.

[0066] Comparative Examples 1 to 7

[0067] The only difference between the preparation methods of the multilayer chip inductors in Comparative Examples 1 to 7 and Example 1 is that the specific parameters of the debinding and pre-sintering steps in Step 6 are different, as shown in Table 1 below.

[0068] Comparative Examples 8 to 19

[0069] The only difference between the preparation methods of the multilayer chip inductors in Comparative Examples 8 to 19 and Example 1 is that the specific parameters of the co-firing step in step 7 are different, as shown in Table 2 below.

[0070] Table 1 Specific parameters of the debinding and pre-sintering steps in the preparation methods of Examples 1 to 14 and Comparative Examples 1 to 7

[0071]

[0072]

[0073]

[0074] Table 2 Specific parameters of the co-firing step in the preparation methods of Examples 15 to 35 and Comparative Examples 8 to 19

[0075]

[0076]

[0077]

[0078]

[0079]

[0080] Performance Testing:

[0081] The laminated chip inductors prepared in Examples 1 to 35 and Comparative Examples 1 to 19 were tested for the compactness, adhesion and tensile strength of the external electrodes and the porcelain body, respectively. The specific testing methods are as follows:

[0082] (1) External electrode and porcelain body density test: Slice the sintered sample at the external electrode and porcelain body, and observe its internal density using a scanning electron microscope.

[0083] (2) Adhesion test: First, take the above sintered samples and perform nickel plating (thickness 2-5 μm) and tin plating (thickness 3-9 μm), then weld the samples to the pads, and apply a certain magnitude of thrust to the samples parallel to the pads from 0 N until the product is mechanically damaged. Take 15 samples for testing and calculate the average force causing mechanical damage.

[0084] (3) Tensile force test: First, take the above-mentioned sintered samples for nickel plating (thickness 2-5 μm) and tin plating (thickness 3-9 μm), then weld the two ends of the samples to welding wires, apply a tensile force from 0N to the welding wires at both ends until the product is mechanically damaged, and take 15 samples for testing, and calculate the average tensile force that causes mechanical damage.

[0085] The performance data of the multilayer chip inductors prepared in Examples 1 to 14 and Comparative Examples 1 to 7 measured according to the above test method are shown in Table 3 below, and the performance data of the multilayer chip inductors prepared in Examples 15 to 35 and Comparative Examples 8 to 19 are shown in Table 4 below.

[0086] Table 3 Performance test results of the laminated chip inductors prepared in Examples 1 to 14 and Comparative Examples 1 to 7

[0087]

[0088]

[0089] As can be seen from Table 3, embodiments 1 to 14 of the present invention adjust the pre-sintering heating rate, pre-sintering temperature, pre-sintering holding time, pre-sintering cooling rate, etc., so that the ceramic body density of the obtained multilayer chip inductor is better, the tensile force is greater than 20N, and some embodiments have good adhesion. Comparative Example 1 does not set a pre-sintering step, and the ceramic body density of the obtained multilayer chip inductor is poor, there are many internal holes, and the adhesion and tensile force are poor. The heating rate in the pre-sintering stage is too fast (for example, Comparative Example 2), the sintering temperature in the pre-sintering stage is too low or too high (for example, Comparative Examples 3 to 4), the holding time in the pre-sintering stage is too short or too long (for example, Comparative Examples 5 to 6), and the cooling rate in the pre-sintering stage is too fast (for example, Comparative Example 7), all of which will result in at least one of the density, tensile force and adhesion of the obtained multilayer chip inductor failing to meet the requirements.

[0090] Table 4 Performance test results of the laminated chip inductors prepared in Examples 15 to 35 and Comparative Examples 8 to 19

[0091]

[0092]

[0093] It can be seen from Table 4 that Examples 15 to 35 adjust the parameters such as the heating rate, sintering temperature, and sintering time of the primary sintering and the secondary sintering, so that the ceramic body density and the external electrode density of the prepared multilayer chip inductor are relatively high, and have relatively high adhesion and tensile strength, specifically: the adhesion is greater than 5N, and the tensile strength is greater than 18N. If the heating rate of the primary sintering is too fast (for example, comparative example 8), the sintering temperature of the primary sintering is too high or too low (for example, comparative examples 9-10), the sintering time of the primary sintering is too short or too long (for example, comparative examples 11-12), the heating rate of the secondary sintering is too fast (for example, comparative example 13), the sintering temperature of the secondary sintering is too low or too high (for example, comparative examples 14-15), the sintering time of the secondary sintering is too short or too long (for example, comparative examples 16-17), the cooling rate of the secondary sintering is too fast or too slow (for example, comparative examples 18-19), at least one of the properties of the ceramic body density, external electrode density, adhesion, and tensile force of the prepared multilayer chip inductor cannot meet the use requirements of the multilayer chip inductor.

[0094] The above is a detailed description of the embodiments of the present invention, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A method for preparing a multilayer chip inductor, characterized in that: The following steps are involved: S1: forming a ceramic slurry into a film, and then performing punching, printing of internal electrode slurry, lamination, and pressing and cutting in sequence to obtain a laminate; S2: debinding the laminate, then heating the laminate to 400-500°C at a rate not exceeding 15°C / min for pre-sintering for 0.2-0.3h, then cooling the laminate at a rate not exceeding 20°C / min, and then coating the laminate with an external electrode slurry at both ends to obtain a pre-sintered body; S3: heating the pre-sintered body to 200-500°C at a rate not exceeding 10°C / min and sintering it for 0.5-2.5h; then heating it to 600-900°C at a rate not exceeding 15°C / min and sintering it for a second time for 0.5-2h, and then cooling it at a rate of 10-20°C / min to obtain the laminated chip inductor.

2. The method for preparing the multilayer chip inductor according to claim 1, characterized in that: The heating rate of the pre-sintering step is 5 to 15°C / min; And / or, the cooling rate of the pre-sintering step is 10-20°C / min; And / or, the sintering atmosphere in the pre-sintering step is air.

3. The method for preparing the multilayer chip inductor according to claim 1, characterized in that: In step S2, the debinding temperature is 200-400°C; And / or, the debinding and heat preservation time is 1 to 4 hours; And / or, the heating rate of the debinding step is 3-10°C / min; And / or, the debinding step is performed in air; And / or, the debinding step causes the carbon content in the laminate to be no more than 10%.

4. The method for preparing a multilayer chip inductor according to claim 1, characterized in that: The heating rate of the primary sintering step is 5 to 10°C / min; And / or, the sintering atmosphere of the primary sintering step is air; And / or, the heating rate of the secondary sintering step is 5 to 15° C. / min; And / or, the sintering atmosphere in the secondary sintering step is air.

5. The method for preparing the multilayer chip inductor according to claim 1, characterized in that: The step of forming the ceramic slurry into a film in step S1 is: casting the ceramic slurry into a film and drying it, the casting rate is 0.05-0.2 m / s, the drying temperature is 40-60° C., and the drying time is 2-5 min.

6. The method for preparing a multilayer chip inductor according to claim 1, characterized in that: The heating rate of the secondary sintering step is 3-7° C. / min greater than the heating rate of the primary sintering step.

7. The method for preparing a multilayer chip inductor according to claim 1, characterized in that: The ceramic slurry comprises the following components in percentage by mass: 10-20% Al2O3, 30-50% glass powder, 5-15% resin, 30-50% organic solvent and 0-1% dispersant.

8. The method for preparing a multilayer chip inductor according to any one of claims 1 to 7, characterized in that: The external electrode slurry comprises the following components in percentage by mass: 50-70% silver, 5-20% metal oxide, 2-10% silicon oxide, 1-10% resin, 10-20% organic solvent, and 0-1% dispersant.

9. The method for preparing a multilayer chip inductor according to claim 8, characterized in that: The metal oxides include aluminum oxide, zirconium oxide and titanium oxide in a mass ratio of 1:(2-3):(3-5).

10. Use of the method for preparing the multilayer chip inductor according to any one of claims 1 to 9 in preparing ceramic electronic products.

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