Optoelectronic semiconductor component and method for operating optoelectronic semiconductor component

Abstract

Described herein is an optoelectronic semiconductor component (1) comprising a semiconductor body (10) having a first region (101), a second region (102) and an active region (103) configured to emit or detect electromagnetic radiation in an emission direction (S). The optoelectronic semiconductor component (1) further comprises a first reflector (21) arranged on a first side of the semiconductor body (10) and a second reflector (22) arranged on a second side of the semiconductor body (10) opposite the first side, a first electrode (31) and a second electrode (32), an aperture region (104) and an optical element (40) arranged downstream of the active region (103) in the emission direction (S). The emission direction (S) is oriented parallel to the stacking direction of the semiconductor bodies (10). A first electrode (31) is arranged on the first region (101) and a second electrode (32) is arranged between the second reflector (22) and the active region (103). The invention further relates to a method for operating an optoelectronic semiconductor component (1).

Description

Technical Field

[0001] The present application relates to an optoelectronic semiconductor component and a method for operating an optoelectronic semiconductor component. Summary of the invention

[0002] The object is to provide an optoelectronic semiconductor device comprising improved optical properties.

[0003] This object is achieved in particular by an optoelectronic semiconductor component as specified in the independent patent claim. Further preferred developments form the subject matter of the dependent patent claims.

[0004] According to at least one embodiment of the optoelectronic semiconductor device, the optoelectronic semiconductor device comprises a semiconductor body having a first region, a second region and an active region, the active region being configured to emit or detect electromagnetic radiation in an emission direction. The emission direction is preferably oriented perpendicular to a main extension plane of the semiconductor body. In particular, the semiconductor device is configured to emit coherent electromagnetic radiation. Preferably, the optoelectronic semiconductor device is configured as a vertical cavity semiconductor laser device (VCSEL for short).

[0005] According to at least one embodiment, an optoelectronic semiconductor device comprises: a first reflector arranged on a first side of the semiconductor body; and a second reflector arranged on a second side of the semiconductor body opposite to the first side. The first and second reflectors preferably comprise a high reflectivity for electromagnetic radiation emitted in the active region during operation. Advantageously, a laser cavity is formed between the first reflector and the second reflector.

[0006] According to at least one embodiment, an optoelectronic semiconductor device includes a first electrode and a second electrode. A current for operating the optoelectronic semiconductor device flows between the first electrode and the second electrode. For example, the first and second electrodes are formed of metal or metal alloy.

[0007] According to at least one embodiment, the optoelectronic semiconductor device comprises an aperture region. The aperture region can confine the current in the semiconductor body in a lateral direction. The lateral direction is oriented parallel to the main expansion plane of the semiconductor body. By limiting the current, a lateral expansion of the light emission can also be achieved. Advantageously, the semiconductor device emits single-mode electromagnetic radiation.

[0008] According to at least one embodiment, the optoelectronic semiconductor device comprises an optical element arranged downstream of the active region in the emission direction. The optical element is, for example, a refractive element or a diffractive element. Preferably, the optical element is permeable to electromagnetic radiation generated in the active region during operation.

[0009] According to at least one embodiment of the optoelectronic semiconductor device, the emission direction is oriented parallel to a stacking direction of the semiconductor body. For example, the stacking direction is a direction in which semiconductor regions of the semiconductor body grow on top of each other. The stacking direction is particularly oriented perpendicularly with respect to a main extension plane of the active region.

[0010] According to at least one embodiment of the optoelectronic semiconductor device, the first electrode is arranged on the first region, and the second electrode is arranged between the second reflector and the active region. Preferably, the first electrode is arranged directly on the first region. The second electrode may have direct contact to the second region. Current may be injected into the semiconductor body without passing through one of the first reflector or the second reflector. Therefore, the first electrode and the second electrode are advantageously arranged in a manner to achieve a very low resistance of the optoelectronic semiconductor device.

[0011] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component includes:

[0012] a semiconductor body having a first region, a second region and an active region, the active region being configured to emit or detect electromagnetic radiation in an emission direction,

[0013] a first reflector arranged on a first side of the semiconductor body and a second reflector arranged on a second side of the semiconductor body opposite to the first side,

[0014] - a first electrode and a second electrode,

[0015] - aperture area, and

[0016] - an optical element arranged downstream of the active region in the emission direction, wherein

[0017] - the emission direction is oriented parallel to the stacking direction of the semiconductor body,

[0018] - the first electrode is arranged on the first area and the second electrode is arranged between the second reflector and the active area.

[0019] The optoelectronic semiconductor devices described in this article are based inter alia on the following considerations: New measurement applications focus on self-mixing interferometry (SMI) sensors based on semiconductor lasers. These can be seen as low-cost, compact and robust solutions for velocity and displacement measurements. In particular, VCSEL devices have been found to be suitable for use in SMI sensing applications. In ordinary applications, in order to measure the SMI signal, fluctuations in the optical power output are often monitored by an additional photodiode, because fluctuations in the forward voltage are often disturbed by high noise levels and therefore a relatively poor signal-to-noise ratio (SNR) occurs.

[0020] The optoelectronic semiconductor device described herein is based on the idea, among other things, of reducing the resistance using an optoelectronic semiconductor device with a number of improvements to reduce the noise level in the forward voltage of the semiconductor device. By reducing the noise level, the use of the forward voltage as an SMI signal is greatly facilitated, and the monitoring diode for monitoring the optical power output can be disposed of. The resistivity is reduced, in particular, by increasing the diameter of the aperture region and / or the use of a tunnel junction.

[0021] According to at least one embodiment of the optoelectronic semiconductor device, the aperture region comprises a diameter between 4 μm and 10 μm. Here and hereinafter, the diameter of the aperture region is measured in a direction parallel to the main expansion plane of the semiconductor body and transverse to the stacking direction of the semiconductor body. The diameter of the aperture region affects various parameters. In particular, a smaller diameter of the aperture region results in a higher resistance of the semiconductor body. High resistance can lead to significantly higher operating temperatures and other undesirable effects.

[0022] The larger diameter of the aperture region may result in the emission of electromagnetic radiation comprising many optical modes, thus interfering with single mode operation.

[0023] According to at least one embodiment of the optoelectronic semiconductor device, the aperture region comprises a diameter between 6 μm and 8 μm. The aperture region having a diameter between 6 μm and 8 μm may maintain single-mode optical emission while having an advantageously low resistivity.

[0024] According to at least one embodiment of the optoelectronic semiconductor device, the aperture region comprises an oxide aperture. The oxide aperture is a region comprising an oxide material having a relatively high electrical resistance compared to other materials of the semiconductor body. Thus, the oxide aperture is configured to limit the current in a lateral dimension. The oxide aperture is preferably arranged at a lateral edge of the semiconductor body, where only a low current or no current is required. Thus, the current can be limited to the lateral center of the semiconductor body by the oxide aperture.

[0025] According to at least one embodiment of the optoelectronic semiconductor device, the aperture region includes a tunnel junction. A tunnel junction is a point where two different conductive materials meet, usually separated by a thin barrier, for the purpose of transferring electrons from one material to another. The definition aspect of a tunnel junction is that, mechanically speaking, electrons are too weak to penetrate the junction barrier, but penetrate anyway through a principle called quantum tunneling. A tunnel junction is an area that includes a relatively low resistance compared to other materials of the semiconductor body. Therefore, a tunnel junction allows high currents. The tunnel junction is preferably arranged in the lateral center of the semiconductor body, where a high current is required. The tunnel junction preferably has a lower thermal resistance than the material of the oxidized aperture. Advantageously, the tunnel junction reduces the resistance of the semiconductor device while maintaining a high thermal conductivity.

[0026] According to at least one embodiment of the optoelectronic semiconductor device, the tunnel junction is a buried tunnel junction. Preferably, the buried tunnel junction is buried in an n-doped region of the semiconductor body, more preferably in a first region of the semiconductor body.

[0027] According to at least one embodiment of the optoelectronic semiconductor device, a doped spacer layer is arranged between the tunnel junction and the active layer. The doped spacer layer is, for example, exactly counter-doped compared to the second region. For example, if the second region is n-doped, the doped spacer layer is p-doped, and vice versa.

[0028] In accordance with at least one embodiment of the optoelectronic semiconductor component, the first region and the second region are n-doped and the spacer layer is p-doped. This doping achieves a preferably low resistivity of the semiconductor component.

[0029] According to at least one embodiment of the optoelectronic semiconductor component, the optical element is suitable for collimating the electromagnetic radiation generated in the active region. Collimation of the emitted electromagnetic radiation enables, for example, simpler further use of the radiation, since only limited further divergence occurs.

[0030] According to at least one embodiment of the optoelectronic semiconductor device, the optoelectronic semiconductor device comprises a substrate configured to be used as an optical element. The substrate is preferably arranged on a side of the second reflector away from the active region. In particular, the substrate is a growth substrate for the semiconductor body and / or the second reflector. In other words, the region of the semiconductor body and / or the second reflector grows on the substrate. Advantageously, the substrate is permeable to electromagnetic radiation generated in the active region during operation. The substrate can be configured to have the form of a collimating lens for radiation emitted from the active region during operation. Preferably, the surface of the substrate facing away from the active region comprises a structure suitable for collimating the electromagnetic radiation emitted in the active region during operation.

[0031] According to at least one embodiment of the optoelectronic semiconductor device, the optical element is designed such that at least some of the electromagnetic radiation generated in the active region can re-enter the semiconductor body after leaving the semiconductor device. In other words, the optical element is permeable to electromagnetic radiation emitted from the active region and leaving the semiconductor body during operation, and to electromagnetic radiation in the opposite direction. Preferably, the optical element allows radiation to re-enter the semiconductor body for use in self-mixing interferometry applications.

[0032] According to at least one embodiment of the optoelectronic semiconductor device, the active region emits electromagnetic radiation having a wavelength between 400 nm and 1600 nm. In other words, the optoelectronic semiconductor device can be applied to any VCSEL type that emits electromagnetic radiation having a wavelength between 400 nm and 1600 nm. Preferably, the active region emits electromagnetic radiation having a wavelength between 800 nm and 1200 nm, particularly preferably, the active region emits electromagnetic radiation having a wavelength between 900 nm and 1100 nm.

[0033] According to at least one embodiment of the optoelectronic semiconductor device, the first reflector and the second reflector are formed as distributed Bragg reflectors, each comprising a plurality of alternating layers. In particular, the alternating layers have different refractive indices. Such a reflector can have a high optical reflectivity for wavelengths that meet the Bragg requirements.

[0034] According to at least one embodiment of the optoelectronic semiconductor device, the first reflector is made of a different material than the second reflector. The first reflector is preferably made of an oxide. For example, the first reflector can be manufactured using different methods and can be placed on the semiconductor body in a separate method step.

[0035] According to at least one embodiment of the optoelectronic semiconductor device, the second reflector comprises a plurality of n-doped layers. Advantageously, the n-doped layers may exhibit a relatively low resistance compared to the p-doped layers. This facilitates current injection into the second region.

[0036] A method for operating an optoelectronic semiconductor device is also disclosed. The method for operating an optoelectronic semiconductor device is particularly suitable for operating the optoelectronic semiconductor device described herein. This means that all features disclosed in conjunction with the optoelectronic semiconductor device are also disclosed for the method for operating the optoelectronic semiconductor device, and vice versa.

[0037] According to at least one embodiment of the method for operating an optoelectronic semiconductor component, the component is used to measure the distance of an object to the optoelectronic semiconductor component. For example, the object is illuminated by electromagnetic radiation emitted by the semiconductor component during operation.

[0038] According to at least one embodiment of a method for operating an optoelectronic semiconductor device, the device is used in a self-mixing interferometry application. Self-mixing interferometry is a sensing technique used to detect small relative displacements, velocities, refractive index changes of materials, and flows. A self-mixing phenomenon occurs when a laser beam is partially reflected from an external target and injected back into the laser cavity. The reflected light interferes or "mixes" with the light inside the laser cavity and, in particular, produces changes in threshold gain, emission power, laser spectrum, and laser junction voltage. Before mixing with the original laser emission, the reflected light can be frequency shifted by means of the Doppler effect. The resulting output power changes are typically monitored by a photodiode integrated within the laser package. This phenomenon allows the laser to be used as an interferometric sensor that combines a light source and an interferometer in one device, thereby significantly reducing the cost and complexity of the sensing system. The coherent detection nature of this sensing scheme inherently provides very high sensitivity, often at the quantum noise limit.

[0039] In operation, the optoelectronic semiconductor device emits electromagnetic radiation in an emission direction toward a target. The emitted radiation is at least partially reflected by the target. The reflected radiation propagates back from the target toward the optoelectronic semiconductor device. Therefore, the reflected emission re-enters the optoelectronic semiconductor device through the optical element and interferes with the electromagnetic radiation generated in the active region. Therefore, self-mixing interferometry can be achieved. By monitoring changes in, for example, the threshold gain, emission power, laser spectrum, and forward voltage of the optoelectronic semiconductor device, for example, the distance of the target from the device can be determined.

[0040] According to at least one embodiment of the method for operating an optoelectronic semiconductor device, the forward voltage of the semiconductor device is measured in order to obtain a self-mixing interferometry signal. The use of a semiconductor device for self-mixing interferometry applications as described herein enables a particularly simple measurement of the self-mixing interferometry signal by measuring the forward voltage of the device. This is achieved by reducing the resistance of the semiconductor device to a level where, for example, shot noise and thermal noise are low enough to effectively use the forward voltage as a signal for the self-mixing interferometry signal. Therefore, advantageously, a monitoring diode for measuring power output is not required.

[0041] The optoelectronic semiconductor devices described herein are particularly suitable for use in any application using SMI measurements, such as finger sliders, optical microphones, eye trackers, rotary encoders, vital sensors, or speaker feedback. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Further advantages and advantageous embodiments and further developments of the optoelectronic semiconductor component result from the following exemplary embodiments, which are described below in conjunction with the figures.

[0043] In the figure:

[0044] Figure 1 shows a schematic side view of an optoelectronic semiconductor component described herein according to a first exemplary embodiment,

[0045] Figure 2 shows a schematic plan view of an optoelectronic semiconductor component described herein according to a second exemplary embodiment,

[0046] Figure 3 shows a schematic plan view of an optoelectronic semiconductor component described herein according to a third exemplary embodiment,

[0047] Figure 4 shows a schematic plan view of an optoelectronic semiconductor component described herein according to a fourth exemplary embodiment,

[0048] Figure 5 shows a schematic plan view of an optoelectronic semiconductor component described herein according to a fifth exemplary embodiment, and

[0049] Figure 6 The voltage signal and the corresponding noise signal of the SMI signal of two optoelectronic semiconductor components described in this document are shown.

[0050] In the drawings, the same reference symbols are used to mark the same, similar or equivalent elements. The proportions of the drawings and the elements shown in the drawings relative to each other are not to be considered true to scale. Rather, individual elements may be oversized for better representation and / or comprehensibility. DETAILED DESCRIPTION

[0051] Figure 1 A schematic side view of an optoelectronic semiconductor device 1 described herein according to a first exemplary embodiment is shown. The optoelectronic semiconductor device 1 comprises a semiconductor body 10 having a first region 101, a second region 102 and an active region 103, the active region 103 being configured to emit or detect electromagnetic radiation in an emission direction S. The active region 103 is arranged between the first region 101 and the second region 102. The emission direction S is preferably oriented perpendicularly to a main extension plane of the semiconductor body 10. The emission direction S is oriented parallel to a stacking direction of the semiconductor body 10. For example, the stacking direction is a direction in which semiconductor regions of the semiconductor body 10 grow onto each other. The stacking direction is in particular oriented perpendicularly with respect to the main extension plane of the active region 103.

[0052] In particular, the semiconductor device 1 is configured to emit coherent electromagnetic radiation. Figure 1 The optoelectronic semiconductor device 1 is configured as a vertical cavity semiconductor laser device (VCSEL for short).

[0053] Furthermore, the optoelectronic semiconductor device 1 comprises a first reflector 21 arranged on a first side of the semiconductor body 10, and a second reflector 22 arranged on a second side of the semiconductor body 10 opposite to the first side. The first reflector 21 is in direct contact with the first region 101. The second reflector 22 is in direct contact with the second region 102.

[0054] The first and second reflectors 21 , 22 preferably comprise a high reflectivity for electromagnetic radiation emitted in the active region 103 during operation.

[0055] Advantageously, the laser cavity is formed between the first reflector 21 and the second reflector 22. The first reflector 21 and the second reflector 22 are formed as distributed Bragg reflectors, each comprising a plurality of alternating layers. In particular, the alternating layers have different refractive indices. Such a reflector can have a high optical reflectivity for a wavelength that meets the Bragg requirements.

[0056] The optoelectronic semiconductor device 1 further comprises a first electrode 31 and a second electrode 32. The first electrode 31 is intended to be used to inject current into the first region 101, and the second electrode is intended to be used to inject current into the second region 102. For example, the first and second electrodes 31, 32 are formed with a metal or a metal alloy. The first electrode 31 is arranged on the first region 101, and the second electrode 32 is arranged between the second reflector 22 and the active region 103. Preferably, the first electrode 31 is arranged directly on the first region 101. The second electrode 32 may have direct contact to the second region 102. The first electrode 31 preferably comprises a hole in the lateral center of the semiconductor body 10. The first reflector 31 is preferably arranged in the hole of the first electrode 31.

[0057] Current can be injected into the semiconductor body 10 without passing through one of the first or second reflectors 21, 22. The first and second electrodes 31, 32 are therefore advantageously arranged in such a way that a very low resistance of the optoelectronic semiconductor component 1 is achieved.

[0058] Furthermore, the optoelectronic semiconductor component 1 comprises an aperture region 104. The aperture region 104 is arranged in the first region 101. In particular, the aperture region 104 is at least partially embedded in the first region 101.

[0059] The aperture region 104 can confine the current in the semiconductor body 10 in a lateral direction. The lateral direction is oriented parallel to the main extension plane of the semiconductor body 10. By limiting the current, a lateral extension of the light emission can also be achieved. Advantageously, the optoelectronic semiconductor component 1 emits single-mode electromagnetic radiation. Figure 1 The aperture region 104 comprises an oxide aperture. The oxide aperture is a region comprising an oxide material having a relatively high electrical resistance compared to the other materials of the semiconductor body 10. Thus, the oxide aperture is configured to confine the current in a lateral dimension. The oxide aperture is preferably arranged at the lateral edge of the semiconductor body 10, where only a low current or no current is required. Thus, the current can be confined to the lateral center of the semiconductor body 10 by the oxide aperture.

[0060] The optoelectronic semiconductor device 1 includes a substrate 50, which is arranged on a side of the second reflector 22 that is remote from the active region 103. In particular, the substrate 50 is a growth substrate for the semiconductor body 10 and / or the second reflector 22. In other words, the first region 101, the active region 103 and the second region 103 of the semiconductor body 10 and / or the second reflector 22 are grown on the substrate 50.

[0061] The optoelectronic semiconductor device 1 comprises an optical element 40 arranged downstream of the active region 103 in the emission direction S. The optical element 40 is, for example, a refractive element or a diffractive element. Preferably, the optical element 40 is permeable to the electromagnetic radiation generated in the active region 103 during operation. The optical element 40 is suitable for collimating the electromagnetic radiation generated in the active region 103 during operation. The collimation of the emitted electromagnetic radiation enables, for example, a simpler further use of the radiation, because only limited further divergence occurs. The optical element 40 is designed so that at least some of the electromagnetic radiation generated in the active region 103 during operation can re-enter the semiconductor body 10 after leaving the semiconductor device 1. In other words, the optical element 40 is permeable to the electromagnetic radiation emitted from the active region 103 during operation and leaving the semiconductor body 10, as well as to the electromagnetic radiation propagating in the opposite direction. In particular, the optical element 40 allows the radiation to re-enter the semiconductor body 10 for use in self-mixing interferometry applications.

[0062] The optoelectronic semiconductor device 1 is particularly suitable for use in self-mixing interferometry applications. In such applications, a beam of coherent electromagnetic radiation is emitted in an emission direction S and at least partially reflected from an external target. The reflected portion of the electromagnetic radiation can re-enter the optical element 40 and thus be injected back into the cavity of the semiconductor body 10. The reflected electromagnetic radiation interferes or "mixes" with the electromagnetic radiation inside the semiconductor body 10 and in particular produces changes in the threshold gain, emission power, laser spectrum and forward voltage.

[0063] In operation, the optoelectronic semiconductor device 1 emits radiation E in an emission direction S towards a target T. The emitted radiation E is at least partially reflected by the target T. The reflected radiation R propagates from the target T back towards the optoelectronic semiconductor device 1. Therefore, the reflected emission R re-enters the optoelectronic semiconductor device 1 through the optical element 40 and interferes with the electromagnetic radiation generated in the active region 103. Therefore, self-mixing interferometry can be achieved.

[0064] Figure 2 A schematic plan view of an optoelectronic semiconductor component 1 described herein according to a second exemplary embodiment is shown. The second exemplary embodiment corresponds substantially to Figure 1 . However, the emission direction S according to the second exemplary embodiment is oriented in the exact opposite direction. The emission direction S starts from the active region 103 and faces the substrate 50 .

[0065] Furthermore, the optoelectronic semiconductor device 1 comprises a substrate 50, which is configured to serve as an optical element 40. The substrate 50 is permeable to the electromagnetic radiation generated in the active region 103 during operation. The substrate 50 can be configured to have the form of a collimating lens for the radiation emitted from the active region 103 during operation. Preferably, the surface of the substrate 50 facing away from the active region 103 comprises a structure suitable for collimating the electromagnetic radiation emitted in the active region 103 during operation. Therefore, an additional external optical element 40 is not necessary.

[0066] In addition, the aperture region 104 includes a tunnel junction 105. The tunnel junction 105 is a point where two different conductive materials meet, usually separated by a thin barrier, for the purpose of transferring electrons from one material to another. The tunnel junction 105 is a region that includes a relatively low electrical resistance compared to the other materials of the semiconductor body 10. Therefore, the tunnel junction 105 allows high currents. The tunnel junction 105 is arranged in the lateral center of the semiconductor body 10, where a high current is required. The tunnel junction 105 preferably has a lower thermal resistance than the material of the oxide aperture. Advantageously, the tunnel junction 105 reduces the resistance of the semiconductor device 1 while maintaining a high thermal conductivity.

[0067] The tunnel junction 105 is a buried tunnel junction. Preferably, the buried tunnel junction 105 is buried in an n-doped region of the semiconductor body 10 , more preferably, in the first region 101 of the semiconductor body 10 .

[0068] The doped spacer layer 106 is arranged between the tunnel junction 105 and the active layer 103. The doped spacer layer 106 is, for example, exactly counter-doped compared to the second region 102. For example, if the second region 102 is n-doped, the doped spacer layer 106 is p-doped, and vice versa. The first region 101 and the second region 102 are n-doped, and the spacer layer 106 is p-doped. This doping achieves a preferred low resistivity of the semiconductor device 1.

[0069] In operation, the optoelectronic semiconductor device 1 emits radiation E in an emission direction S toward a target T. The emitted radiation E is at least partially reflected by the target T. The reflected radiation R propagates from the target T back toward the optoelectronic semiconductor device 1. The reflected radiation R therefore re-enters the optoelectronic semiconductor device 1 through the substrate 50 configured as an optical element 40 and interferes with the electromagnetic radiation generated in the active region 103. Thus, self-mixing interferometry can be achieved.

[0070] For simplicity's sake, the other Figures 3 to 5 The target T and the propagation of the emitted radiation E and reflected radiation R are not shown.

[0071] Figure 3A schematic plan view of an optoelectronic semiconductor component 1 described herein according to a third exemplary embodiment is shown. The third exemplary embodiment corresponds substantially to Figure 1 . However, the emission direction S according to the third exemplary embodiment is oriented in the exact opposite direction. The emission direction S starts from the active region 103 and faces the substrate 50. Therefore, the optical element 40 is arranged on the side of the substrate 50 downstream of the emission direction S.

[0072] Figure 4 1 shows a schematic plan view of an optoelectronic semiconductor component 1 described herein according to a fourth exemplary embodiment. The fourth exemplary embodiment corresponds substantially to Figure 2 However, the substrate 50 is not configured to be used as the optical element 40 . Therefore, the external optical element 40 is arranged on the side of the substrate 50 .

[0073] Figure 5 1 shows a schematic plan view of an optoelectronic semiconductor component 1 described herein according to a fifth exemplary embodiment. The fifth exemplary embodiment corresponds substantially to Figure 1 . However, the diameter 104X of the aperture region 104 is increased. The aperture region 104 comprises a diameter 104X between 4 μm and 10 μm. The diameter 104X of the aperture region 104 is measured in a direction parallel to the main expansion plane of the semiconductor body 10 and transverse to the stacking direction of the semiconductor body 10. The diameter 104X of the aperture region 104 affects a variety of parameters. In particular, a smaller diameter 104X of the aperture region 104 leads to a higher resistance of the semiconductor body 10. The high resistance can lead to significantly higher operating temperatures and other unwanted effects, such as higher noise levels in the forward voltage signal of the semiconductor device 1. The larger diameter 104X of the aperture region 104 can lead to the emission of electromagnetic radiation including many optical modes, thereby interfering with the single-mode operation.

[0074] Preferably, the aperture region 104 comprises a diameter 104X between 6 μm and 8 μm. The aperture region 104X having a diameter between 6 μm and 8 μm can maintain single mode optical emission while having an advantageously low resistivity.

[0075] Figure 6The voltage signal of the SMI signal and the corresponding noise signal of two different optoelectronic semiconductor devices 1 described herein are shown. Each of the graphs shows two graphs including the voltage signal R of the SMI signal and the noise voltage B. The graph a) on the left hand side corresponds to a semiconductor device 1 having an aperture region 104 with a diameter 104X of approximately 4 μm. The graph b) on the right hand side corresponds to a semiconductor device 1 having an aperture region 104 with a diameter 104X of approximately 13 μm. It becomes clearly visible that the level of noise drops significantly by approximately 10 dB with an increase in the aperture diameter 104X. This is due to the reduced resistance of the semiconductor device 1 having an aperture region 104 with a larger diameter 104X.

[0076] The invention described herein is not limited by the description given with reference to the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, in particular including any combination of features in the claims, even if this feature or this combination itself is not explicitly indicated in the claims or exemplary embodiments.

[0077] This patent application claims priority to U.S. Patent Application No. 17 / 875,895, the disclosure of which is incorporated herein by reference.

[0078] refer to

[0079] 1 Optoelectronic semiconductor devices

[0080] 10 Semiconductor body

[0081] 101 First Area

[0082] 102 Second Area

[0083] 103 Active area

[0084] 104 Aperture Area

[0085] 105 Tunnel Knot

[0086] 106 spacer layer

[0087] 21 First reflector

[0088] 22 Second reflector

[0089] 31. First electrode

[0090] 32. Second electrode

[0091] 40 Optical Components

[0092] 50 substrate

[0093] S Transmit direction

[0094] E Emitted radiation

[0095] R reflected radiation

[0096] T Target

[0097] 104X Aperture Diameter

Claims

1. An optoelectronic semiconductor device (1), comprising: - a semiconductor body (10) having a first region (101), a second region (102) and an active region (103), the active region (103) being configured to emit or detect electromagnetic radiation in an emission direction (S), a first reflector (21) arranged on a first side of the semiconductor body (10) and a second reflector (22) arranged on a second side of the semiconductor body (10) opposite to the first side, - a first electrode (31) and a second electrode (32), - an aperture region (104), and - an optical element (40) arranged downstream of the active region (103) in the emission direction (S), wherein - the emission direction (S) is oriented parallel to the stacking direction of the semiconductor body (10), - The first electrode (31) is arranged on the first region (101), and the second electrode (32) is arranged between the second reflector (22) and the active region (103).

2. The optoelectronic semiconductor component (1) according to claim 1, wherein: - said aperture region (104) comprises a diameter (104X) between 4 μm and 10 μm.

3. The optoelectronic semiconductor component (1) according to claim 1, wherein: - said aperture region (104) comprises a diameter (104X) between 6 μm and 8 μm.

4. The optoelectronic semiconductor component (1) according to claim 1, wherein: - The aperture region (104) comprises oxidized apertures.

5. The optoelectronic semiconductor component (1) according to claim 1, wherein: - The aperture region (104) comprises a tunnel junction (105).

6. The optoelectronic semiconductor component (1) according to the preceding claim, wherein: - The tunnel junction (105) is a buried tunnel junction.

7. The optoelectronic semiconductor component (1) according to the preceding claim, wherein: A doped spacer layer (106) is arranged between the tunnel junction (105) and the active layer (103).

8. The optoelectronic semiconductor component (1) according to claim 5, wherein: - the first region (101) and the second region (102) are n-doped, and - The spacer layer (106) is p-doped.

9. The optoelectronic semiconductor component (1) according to claim 1, wherein: - the optical element (40) is suitable for collimating the electromagnetic radiation generated in the active region (103).

10. The optoelectronic semiconductor component (1) according to claim 1, wherein: The optoelectronic semiconductor component (1) comprises a substrate (50) which is designed to function as an optical element (40).

11. The optoelectronic semiconductor component (1) according to claim 1, wherein: The optical element (40) is designed in such a way that at least some of the electromagnetic radiation generated in the active region (103) can re-enter the semiconductor body (10) after leaving the semiconductor component (1).

12. The optoelectronic semiconductor component (1) according to claim 1, wherein: - The active region (103) emits electromagnetic radiation having a wavelength between 400 nm and 1600 nm.

13. The optoelectronic semiconductor component (1) according to claim 1, wherein: - The first reflector (21) and the second reflector (22) are formed as distributed Bragg reflectors, each comprising a plurality of alternating layers.

14. The optoelectronic semiconductor component (1) according to claim 1, wherein: - The first reflector (21) is made of a different material than the second reflector (22).

15. The optoelectronic semiconductor component (1) according to claim 1, wherein: - The second reflector (22) comprises a plurality of n-doped layers.

16. A method for operating an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein: The device is used to measure the distance from a target (T) to the optoelectronic semiconductor component (1).

17. The method for operating an optoelectronic semiconductor component (1) according to the preceding claim, wherein: - The device is used in self-mixing interferometry applications.

18. Method for operating an optoelectronic semiconductor component (1) according to one of the preceding claims, wherein: - measuring the forward voltage of the semiconductor device (1) in order to obtain a self-mixing interferometry signal.

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