VCSEL CPO adapter plate structure and manufacturing method thereof

Abstract

The invention discloses a VCSEL CPO adapter plate structure and a manufacturing method thereof, and the method comprises the steps: providing a glass-based substrate which is provided with a first surface and a second surface which are opposite to each other; forming a hole in the glass-based substrate from the first surface to form a blind hole; temporarily bonding the first surface of the glass-based substrate on a carrier plate; thinning the glass-based substrate from the second surface until the second surface is close to the bottom side of the blind hole; manufacturing a re-wiring structure on the second surface of the glass-based substrate, wherein the re-wiring structure forms a through opening at a position corresponding to the blind hole; manufacturing a plurality of external bonding pads on the rewiring structure, and manufacturing solder balls on part of the external bonding pads; de-bonding the first surface of the glass-based substrate with the carrier plate; and forming a hole in the second surface of the glass-based substrate from the opening to the through blind hole so as to form a glass through hole. The VCSEL CPO adapter plate structure can effectively improve the transmission efficiency of VCSEL optical signals, and is simple to manufacture, low in cost, high in yield and suitable for large-scale mass production.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor packaging technology, and in particular to a VCSEL CPO adapter plate structure and a manufacturing method thereof. Background Art

[0002] With the rapid development of cloud computing, big data, artificial intelligence and distributed computing, the large amount of data exchange between servers has put forward higher requirements for data interconnection bandwidth. As an emerging technical direction, optoelectronic interconnection technology combines the high bandwidth and high speed advantages of optical computing and the flexibility of electrical computing to bring new opportunities for future high-speed information transmission. Optical interconnection achieves a large amount of data transmission rate at low attenuation / loss, delay and power consumption; electronic interconnection is more suitable for power distribution and signal processing and control; optical and electrical integration is crucial, and how to combine and package optical modules and electrical modules well is an urgent problem to be solved.

[0003] In related technologies, co-packaged optical devices (CPO) mostly directly connect optical chips and electrical chips to a substrate, and are electrically connected to the substrate by wire bonding or inverted bonding. Since the silicon photonics process node is relatively backward compared to the electrical chip process, the performance of this optoelectronic co-sealed structure is difficult to meet the requirements of high-density and multi-channel communication packaging. Alternatively, a CPO adapter board is made using a silicon substrate, which has a complex process, high cost, and limited improvement in the transmission efficiency of optical signals. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems in the above-mentioned technology to a certain extent. To this end, the purpose of the present invention is to propose a VCSEL CPO adapter plate structure and a manufacturing method thereof, which can effectively improve the transmission efficiency of VCSEL optical signals, is simple to manufacture, has low cost, high yield, and is suitable for large-scale mass production.

[0005] To achieve the above object, the first aspect of the present invention provides a method for manufacturing a VCSEL CPO adapter plate structure, which comprises the following steps:

[0006] Providing a glass-based substrate having a first surface and a second surface opposite to each other;

[0007] Opening a hole in the glass-based substrate from the first surface to form a blind hole;

[0008] temporarily bonding the first surface of the glass-based substrate to a carrier;

[0009] Performing a thinning process on the glass-based substrate from the second surface to the bottom side of the second surface close to the blind hole;

[0010] A redistribution structure is fabricated on the second surface of the glass-based substrate, wherein the redistribution structure forms a through opening at a position corresponding to the blind hole;

[0011] Making a plurality of external pads on the redistribution structure, and making solder balls on some of the external pads;

[0012] debonding the first surface of the glass-based substrate from the carrier;

[0013] A hole is drilled from the opening to the second surface of the glass-based substrate to penetrate the blind hole to form a through-glass via.

[0014] According to a method for manufacturing a VCSEL CPO adapter plate structure of the present invention, the method uses a glass-based substrate as a substrate of the adapter plate. The glass-based substrate has very low optical loss in the visible light and near-infrared bands, is suitable for optical transmission, and can effectively improve the transmission efficiency of VCSEL optical signals; glass is an electrical insulator, which can reduce electrical noise and electromagnetic interference, and is more beneficial to the performance of high-precision optoelectronic systems; the method first forms blind hole OTGVs on the glass-based substrate, and then completes the front temporary bonding and the back RDL wiring and BGA process, and then opens holes from the back to form through-hole OTGVs through the blind holes; the overall process is simple; due to the insulating properties of the glass, it is possible to avoid depositing an insulating layer, further simplifying the process, reducing the cost, and increasing the yield, which has the advantages of being suitable for large-scale mass production.

[0015] In addition, the manufacturing method of a VCSEL CPO adapter plate structure proposed in the present invention may also have the following additional technical features:

[0016] Optionally, the through glass hole has a tapered hole section and a straight hole section, one end of the straight hole section is exposed to the second surface, and the tapered hole section gradually shrinks from the first surface to the other end of the straight hole section.

[0017] Optionally, the blind hole and / or the through glass hole are formed by dry etching, wet etching, laser induction or laser ablation.

[0018] Optionally, the method of manufacturing the redistribution structure includes an additive method, a subtractive method or a Damascus process.

[0019] Optionally, the method of manufacturing a plurality of external pads on the redistribution structure and manufacturing solder balls on some of the external pads comprises the following steps:

[0020] Covering the outer surface of the redistribution structure with a photosensitive material layer;

[0021] Patterning the photosensitive material layer to form a plurality of pad cavities penetrating the photosensitive material layer;

[0022] Filling each pad cavity with a conductive material to produce a plurality of external pads, each of which is electrically connected to the metal wiring layer of the rewiring structure;

[0023] Solder balls are implanted on some of the external pads.

[0024] Furthermore, the external pad extends out of the pad cavity and covers the top of the photosensitive material layer located at the periphery of the pad cavity.

[0025] To achieve the above object, a second aspect of the present invention provides a VCSEL CPO adapter plate structure, which is manufactured using the above-mentioned method for manufacturing the VCSEL CPO adapter plate structure.

[0026] According to the VCSEL CPO adapter plate structure of the present invention, when VCSEL CPO is co-packaged, the transmission efficiency of VCSEL optical signals can be effectively improved, the loss and delay of signals in the photoelectric conversion process can be reduced, and the overall performance and integration of the system can be improved.

[0027] In addition, the VCSEL CPO adapter plate structure proposed in the present invention may also have the following additional technical features:

[0028] Optionally, the VCSEL CPO adapter plate structure includes:

[0029] a glass-based substrate having opposing first and second surfaces;

[0030] at least one through-glass hole, penetrating the glass-based substrate and exposed at the first surface and the second surface;

[0031] A redistribution structure is formed on the second surface of the glass-based substrate, wherein the redistribution structure forms a through opening at a position corresponding to the through-glass hole;

[0032] A plurality of external pads are formed on the rewiring structure, and the external pads are electrically connected to the metal wiring layer of the rewiring structure;

[0033] A solder ball is connected to a portion of the external pads.

[0034] Furthermore, the through glass hole has a tapered hole section and a straight hole section, one end of the straight hole section is exposed to the second surface, and the tapered hole section gradually shrinks from the first surface to the other end of the straight hole section.

[0035] Furthermore, the rewiring structure is provided with external pads on both sides close to the opening, and the solder balls are arranged on the external pads away from the opening.

[0036] To achieve the above object, the third aspect of the present invention provides an integrated optoelectronic semiconductor packaging structure, including an adapter plate, wherein the adapter plate is the above-mentioned VCSEL CPO adapter plate structure;

[0037] At least one VCSEL chip, wherein the VCSEL chip is flip-mounted on the external pads on both sides of the opening and aligned with the through-glass hole;

[0038] A lens is inserted into the glass through hole.

[0039] According to the integrated optoelectronic semiconductor packaging structure of the present invention, the above-mentioned VCSEL CPO adapter plate structure is used to realize optoelectronic co-packaging, which can effectively improve the transmission efficiency of VCSEL optical signals, reduce the loss and delay of signals in the optoelectronic conversion process, and improve the overall performance and integration of the system. It has the advantages of short-distance signal transmission, low loss, low power consumption, high bandwidth and small size, and has low cost and high yield, and is suitable for large-scale mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 is a process flow chart of a method for manufacturing a VCSEL CPO adapter plate structure in an embodiment of the present invention;

[0041] Figures 2 to 11 A schematic cross-sectional view of an adapter plate structure showing various steps of a method for manufacturing a VCSEL CPO adapter plate structure according to an embodiment of the present invention;

[0042] Fig.12 A cross-sectional schematic diagram of an integrated optoelectronic semiconductor packaging structure according to an embodiment of the present invention;

[0043] Description of labels:

[0044] Glass-based substrate 100, first surface 100a, second surface 100b, blind hole 101, through glass hole 102, tapered hole section 1021, straight hole section 1022;

[0045] Rewiring structure 200, opening 201;

[0046] External solder pad 300;

[0047] Solder ball 400;

[0048] Photosensitive material layer 500, pad cavity 501;

[0049] VCSEL chip 2;

[0050] Lens 3. DETAILED DESCRIPTION

[0051] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0052] In order to better understand the above technical solution, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0053] Please refer to Figures 1 to 12 The present application provides a method for preparing an adapter plate structure for optoelectronic co-packaging. The adapter plate structure can be used to flip-mount VCSEL chips and electrical integrated chips with different node sizes on the adapter plate to achieve on-chip integrated CPO co-packaging technology, which can provide high-bandwidth, low-power optical signal output in short-distance optical communication; the optical signal emitted by the VCSEL is directly transmitted to the electrical chip for processing after internal optoelectronic conversion, reducing the signal loss and delay in the optoelectronic conversion process and improving the overall performance and integration of the system.

[0054] For the method of making the VCSEL CPO adapter plate structure, please refer to Figure 1 , showing a process flow chart of the manufacturing method, comprising the following steps:

[0055] S1: providing a glass-based substrate, wherein the glass-based substrate has a first surface and a second surface opposite to each other;

[0056] S2: opening a hole in the glass-based substrate from the first surface to form a blind hole;

[0057] S3: temporarily bonding the first surface of the glass-based substrate to a carrier;

[0058] S4: performing a thinning process on the glass-based substrate from the second surface to the bottom side of the second surface close to the blind hole;

[0059] S5: manufacturing a redistribution structure on the second surface of the glass-based substrate, wherein the redistribution structure forms a through opening at a position corresponding to the blind hole;

[0060] S6: making a plurality of external pads on the redistribution structure, and making solder balls on some of the external pads;

[0061] S7: debonding the first surface of the glass-based substrate from the carrier;

[0062] S8: drilling a hole from the opening to the second surface of the glass-based substrate to penetrate the blind hole to form a through-glass via.

[0063] This method uses a glass-based substrate as the substrate of the adapter board. The glass-based substrate has very low optical loss in the visible light and near-infrared bands, is suitable for optical transmission, and can effectively improve the transmission efficiency of VCSEL optical signals; glass is a transparent material, and optical functions such as fiber coupling and waveguide integration can be more freely implemented in the optical path design. This transparent property makes the glass-based substrate very advantageous in photonic devices; glass is an electrical insulator, which can reduce electrical noise and electromagnetic interference, and is more beneficial to the performance of high-precision optoelectronic systems; this method first forms blind hole OTGVs on the glass-based substrate, and then completes the front temporary bonding and back RDL wiring and BGA process, and then opens holes from the back to form through-hole OTGVs from the blind hole; the overall process is simple; due to the insulating properties of glass, it can be exempted from the deposition of an insulating layer, further simplifying the process, low cost, high yield, and has the advantages of being suitable for large-scale mass production.

[0064] The following combination Figures 2 to 11 The preparation of the VCSEL CPO adapter plate structure is further introduced, including:

[0065] First, please refer to Figure 2 , perform step S1, provide a glass-based substrate 100, the glass-based substrate 100 has a first surface 100a and a second surface 100b relative to each other. According to one embodiment of the present invention, the glass-based substrate 100 is used for the overall structural support of the adapter plate, and it can be a glass material such as silicate glass, borosilicate glass, soda-magnesium glass, quartz, etc. The glass-based substrate 100 has a first surface 100a and a second surface 100b relative to each other; it can be understood that the first surface 100a is the front side of the glass-based substrate 100, and the second surface 100b is the back side of the glass-based substrate 100. The glass-based substrate 100 is first cleaned.

[0066] According to an embodiment of the present invention, the thickness of the glass-based substrate 100 may be 100-500 μm. As a substrate of the transfer plate, this thickness can make the package size of the package structure thinner. The glass-based substrate 100 may include a wafer-level substrate with a size of 4 inches, 6 inches, 8 inches, or 12 inches to improve manufacturing efficiency, but the thickness and size of the glass-based substrate 100 are not limited thereto.

[0067] Then, please refer to Figure 3, execute step S2, and open the glass-based substrate 100 from the first surface 100a to form a blind hole 101. Specifically, blind holes 101 of different sizes are prepared on the first surface 100a of the glass-based substrate 100 by dry etching, wet etching, laser induction or laser ablation to form a blind hole OTGVs. The number of blind holes 101 is designed according to the number of deep grooves required for optical signal transmission. In other words, the blind hole 101 passes through a portion of the glass-based substrate 100, extending from the first surface 100a to a portion of the glass-based substrate 100, and does not completely penetrate the glass-based substrate 100. In this way, the process reliability of subsequent processes can be guaranteed. Of course, in other examples, a through hole penetrating the first surface 100a and the second surface 100b can also be prepared on the glass-based substrate 100.

[0068] More specifically, the blind hole 101 is formed by combining laser induction or ablation technology with wet etching technology. Laser induction is to use pulsed laser to act on glass to produce continuous deformation zones. Compared with glass in undeformed areas, the modified glass has a faster etching rate in a hydrofluoric acid system or an alkaline system. Based on this phenomenon, through holes and blind holes can be made on the glass. Specifically, one of nanosecond laser, picosecond laser, and femtosecond laser is first used to produce a modified area on the glass, and then the laser-treated glass is placed in a hydrofluoric acid solution or an alkaline solution for etching. Highly uniform glass through holes and blind holes are obtained. This technology has uniform hole quality, good consistency, no cracks, fast hole formation rate, and adjustable morphology. Due to the anisotropy of etching, the verticality and morphology of the through hole can be controlled by adjusting the laser parameters.

[0069] Next, please refer to Figure 4 , perform step S3 to temporarily bond the first surface 100a of the glass-based substrate 100 to the carrier. Specifically, the front surface of the glass-based substrate can be temporarily bonded to the carrier by using a bonding adhesive.

[0070] Afterwards, please refer to Figure 5 , execute step S4, thinning the glass-based substrate 100 from the second surface 100b to the bottom side of the second surface 100b close to the blind hole 101; specifically, the back side of the glass-based substrate 100 can be ground to the bottom side close to the blind hole 101 by grinding, so that only a thin substrate material is left between the second surface 100b and the bottom side of the blind hole 101 of the glass-based substrate 100.

[0071] Afterwards, please refer to Figure 6, perform step S5, and make a rewiring structure 200 on the second surface 100b of the glass-based substrate 100, and the rewiring structure 200 forms a through opening 201 at the position corresponding to the blind hole 101. It can be understood that the rewiring structure 200 is covered on the second surface 100b, and a through opening 201 is formed at the position corresponding to the blind hole 101 on the glass-based substrate 100 to expose the second surface 100b at this position. Among them, the number of openings 201 is set according to the number of blind holes. The rewiring structure 200 is used to wire electronic signals. In the subsequent package, it transmits the current and control signal provided by the electric chip to the VCSEL chip 2 to ensure the normal operation of the VCSEL chip 2. Specifically, the rewiring structure 200 may include at least one dielectric layer and at least one metal layer. The dielectric layer may include organic materials such as polyimide, or inorganic materials such as silicon nitride, silicon oxide, or the like, acting as a wiring insulation layer, but is not limited thereto. The dielectric layer can be deposited by processes such as PECVD. The metal layer can be copper or other suitable conductive materials. Among them, the rewiring structure 200 can be made by an additive method, a subtractive method or a Damascus process. For example, a dielectric layer is first covered on the second surface 100b, and then a wiring pattern is formed on the dielectric layer by photolithography, and then the metal conductive material is filled in the wiring pattern. More specifically, a PVD titanium adhesion layer and a copper seed layer can be first formed in the wiring pattern, and then a metal layer (copper or other metal conductive material) can be filled by electroplating to complete the RDL wiring. The number of layers of the rewiring structure 200 can be selected as needed, and the rewiring structure 200 can meet the subsequent high-density connection requirements between the optical chip and the electrical chip.

[0072] Next, please refer to Figures 7 to 9 , perform step S6, make a number of external pads (UBM) 300 on the rewiring structure 200, and make solder balls 400 on some of the external pads 300; that is, make external pads 300 on the rewiring structure 200 to facilitate flip-mounting of different chips on the adapter, and make solder balls 400 so that the adapter can be electrically connected to the PCB. The rewiring structure 200 is provided with external pads 300 on both sides close to its opening 201, and the external pads 300 here can be used for flip-mounting VCSEL chips during packaging; the solder balls 400 are arranged on the external pads 300 away from the opening 201, so as to facilitate electrical connection with the PCB.

[0073] Specifically, Figure 7 As shown, the outer surface of the redistribution structure 200 may be covered with a photosensitive material layer 500; the photosensitive material layer 500 may be patterned to form a plurality of pad cavities 501 penetrating the photosensitive material layer 500; and then as shown in FIG. Figure 8As shown, the conductive material is filled into each pad cavity 501 to produce a plurality of external pads 300, each external pad 300 is electrically connected to the metal wiring layer of the redistribution structure 200; finally, as shown in FIG. Fig. 9 As shown, solder balls 400 are implanted on a portion of the external pads 300 . As shown in the figure, solder balls 400 are implanted on the external pads 300 near both sides of the glass-based substrate 100 .

[0074] In a more specific embodiment, the PI film layer can be coated on the outer surface of the redistribution structure 200 by coating, and then a photolithography opening is formed at the location where the external pad 300 is required to be formed by photolithography, and then Figure 7 As shown, a titanium adhesion layer and a copper seed layer are formed on the photolithography opening by PVD, and finally an external pad 300 is formed by electroplating to fill the hole.

[0075] The external pad 300 may be formed by extending out of the pad cavity 501 and covering the top of the photosensitive material layer 500 located at the periphery of the pad cavity 501. In other words, the diameter of the portion of the external pad 300 extending out of the pad cavity 501 is larger than the aperture of the pad cavity 501.

[0076] In addition, the solder ball 400 may be implanted by using a solder paste + solder ball method, and then the solder ball 400 is fixed on the external pad 300 by reflow.

[0077] Afterwards, please refer to Fig.10 , perform step S7 to debond the first surface 100a of the glass-based substrate 100 from the carrier; that is, debond the front side of the glass-based substrate 100, and then perform front-side debonding cleaning to clean off the bonding glue. The debonding method may adopt the existing thermal debonding method or other methods that can debond the front side of the glass-based substrate 100.

[0078] Finally, please refer to Fig.11 , step S8 is performed to drill a hole from the opening 201 to the second surface 100b of the glass-based substrate 100 to the through blind hole 101 to form a through glass hole 102. That is, after completing the back RDL wiring and BGA process of the glass-based substrate 100, the glass-based substrate 100 is drilled from the back so that the blind hole 101 penetrates the glass-based substrate 100 to form a through glass hole 102. The through glass hole 102 is used as an optical through hole for optical signal transmission of the VCSEL chip during subsequent packaging.

[0079] Specifically, a hole may be opened on the second surface 100 b of the glass-based substrate 100 from the opening 201 by dry etching, wet etching, laser induction or laser ablation to complete the manufacture of the entire VCSEL CPO adapter plate structure.

[0080] The through glass via 102 has a tapered hole section 1021 and a straight hole section 1022, one end of the straight hole section 1022 is exposed to the second surface 100b, and the tapered hole section 1021 gradually shrinks from the first surface 100a to the other end of the straight hole section 1022. Therefore, after packaging, the through glass via 102 can better transmit optical signals.

[0081] So far, if Fig.11 As shown, the manufactured VCSEL CPO adapter board structure includes: a glass-based substrate 100, having a first surface 100a and a second surface 100b opposite to each other; at least one glass through hole 102, penetrating the glass-based substrate 100 and exposed to the first surface 100a and the second surface 100b; a redistribution structure 200, formed on the second surface 100b of the glass-based substrate 100, and the redistribution structure 200 forms a through opening 201 at a position corresponding to the glass through hole 102; a plurality of external solder pads 300, formed on the redistribution structure 200, and the external solder pads 300 are electrically connected to the metal wiring layer of the redistribution structure 200; and solder balls 400, connected to some of the external solder pads 300.

[0082] Specifically, during optoelectronic co-packaging, the external pads 300 near the opening 201 are used for flip-chipping the VCSEL chip, and the remaining external pads 300 can be used for flip-chipping the electrical chip.

[0083] Therefore, according to a VCSEL CPO adapter board structure of the present invention, when VCSEL CPO is co-packaged, the transmission efficiency of VCSEL optical signals can be effectively improved, the loss and delay of signals in the photoelectric conversion process can be reduced, and the overall performance and integration of the system can be improved.

[0084] Also, please refer to Fig.12 , provides a form of an integrated optoelectronic semiconductor packaging structure, the semiconductor packaging structure includes an adapter board, the adapter board is the above-mentioned VCSEL CPO adapter board structure; at least one VCSEL chip 2, the VCSEL chip 2 is flipped on the external pads 300 on both sides of the opening 201, and the VCSEL chip 2 is aligned with the glass through hole 102; a lens 3 is inserted into the glass through hole 102. Among them, the external pad 300 is set between the solder ball 400 and the VCSEL chip 2 for flipping the electrical chip.

[0085] The glass through hole 102 is divided into a tapered hole section 1021 and a straight hole section 1022, so that the area of ​​the lens 3 on the side close to the first surface 100a is larger than the area of ​​the side close to the second surface 100b, so that the lens 3 can better focus and adjust the light beam.

[0086] In a specific packaging structure, the side of the lens 3 close to the first surface 100a can be packaged on the first surface 100a through an existing limiting structure, so that the part of the lens 3 for focusing light is inserted into the glass through hole 102. The lens 3 can be a lens.

[0087] Therefore, in this packaging structure, the electric chip directly drives and modulates the VCSEL chip 2, and the lens 3 is used to focus and adjust the direction and quality of the light beam to ensure the accuracy and efficiency of the laser.

[0088] Among them, the electric chip can be a BiCMOS chip, but the types of electric chips and optical chips are not limited to BiCMOS chips and VCSEL chips, and specific selections can be made according to needs.

[0089] In some examples, each VCSEL chip 2 is flip-chip mounted on the external pads 300 on both sides of the opening 201 using bumps.

[0090] Therefore, the use of the above-mentioned VCSEL CPO adapter board structure to achieve optoelectronic co-packaging can effectively improve the transmission efficiency of VCSEL optical signals, reduce signal loss and delay in the optoelectronic conversion process, and improve the overall performance and integration of the system. It has the advantages of short-distance signal transmission, low loss, low power consumption, high bandwidth and small size, and has low cost and high yield, making it suitable for large-scale mass production.

[0091] In addition, other parts of the integrated optoelectronic semiconductor packaging structure can be matched with existing structures.

[0092] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0093] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0094] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0095] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0096] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily being directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0097] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A method for manufacturing a VCSEL CPO adapter plate structure, characterized in that: The following steps are involved: Providing a glass-based substrate having a first surface and a second surface opposite to each other; Opening a hole in the glass-based substrate from the first surface to form a blind hole; temporarily bonding the first surface of the glass-based substrate to a carrier; Performing a thinning process on the glass-based substrate from the second surface to the bottom side of the second surface close to the blind hole; A redistribution structure is fabricated on the second surface of the glass-based substrate, wherein the redistribution structure forms a through opening at a position corresponding to the blind hole; Making a plurality of external pads on the redistribution structure, and making solder balls on some of the external pads; debonding the first surface of the glass-based substrate from the carrier; A hole is drilled from the opening to the second surface of the glass-based substrate to penetrate the blind hole to form a through-glass via.

2. The method according to claim 1, characterized in that: The through glass via has a tapered hole section and a straight hole section, one end of the straight hole section is exposed to the second surface, and the tapered hole section gradually shrinks from the first surface to the other end of the straight hole section.

3. The method according to claim 1, characterized in that: The blind hole and / or the through glass hole are formed by dry etching, wet etching, laser induction or laser ablation.

4. The method according to claim 1, characterized in that: The method of making the redistribution structure includes an additive method, a subtractive method or a Damascene process.

5. The method according to claim 1, characterized in that: The method of making a plurality of external pads on the redistribution structure and making solder balls on some of the external pads comprises the following steps: Covering the outer surface of the redistribution structure with a photosensitive material layer; Patterning the photosensitive material layer to form a plurality of pad cavities penetrating the photosensitive material layer; Filling each pad cavity with a conductive material to produce a plurality of external pads, each of which is electrically connected to the metal wiring layer of the rewiring structure; Solder balls are implanted on some of the external pads.

6. The method according to claim 5, characterized in that: The external pad extends out of the pad cavity and covers the top of the photosensitive material layer located at the periphery of the pad cavity.

7. A VCSEL CPO adapter plate structure, characterized in that: The VCSELCPO adapter plate structure is manufactured using the manufacturing method of any one of claims 1 to 6.

8. The VCSEL CPO adapter plate structure according to claim 7, characterized in that: include: a glass-based substrate having opposing first and second surfaces; at least one through-glass hole, penetrating the glass-based substrate and exposed at the first surface and the second surface; A redistribution structure is formed on the second surface of the glass-based substrate, wherein the redistribution structure forms a through opening at a position corresponding to the through-glass hole; A plurality of external pads are formed on the rewiring structure, and the external pads are electrically connected to the metal wiring layer of the rewiring structure; A solder ball is connected to a portion of the external pads.

9. The VCSEL CPO adapter plate structure according to claim 8, characterized in that: The through glass via has a tapered hole section and a straight hole section, one end of the straight hole section is exposed to the second surface, and the tapered hole section gradually shrinks from the first surface to the other end of the straight hole section.

10. The VCSEL CPO adapter plate structure according to claim 8, characterized in that: The external pads are arranged on both sides of the redistribution structure close to the opening, and the solder balls are arranged on the external pads away from the opening.

11. An integrated optoelectronic semiconductor packaging structure, characterized in that: include: An adapter plate, wherein the adapter plate is a VCSEL CPO adapter plate structure according to any one of claims 7 to 10; At least one VCSEL chip, wherein the VCSEL chip is flip-mounted on the external pads on both sides of the opening and aligned with the through-glass hole; A lens is inserted into the glass through hole.

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