Film forming apparatus

Abstract

The invention provides a film forming apparatus capable of improving film quality. The magnetic field generation unit (70) causes the plasma (P) to be incident on the surface (SF) of the film-forming material (Ma) by maintaining the magnetic field (MF) so that a zero magnetic field position (ZMP) at which the magnetic field (MF) in the chamber (10) becomes zero becomes a predetermined position. As a result, the magnetic field generation unit (70) adjusts the zero magnetic field position (ZMP) to an appropriate position, thereby forming an appropriate magnetic field structure for causing the plasma (P) to be incident on the surface (SF) of the film-forming material (Ma). The magnetic field generation unit (70) sets a zero magnetic field position (ZMP) such that plasma (P) is incident on the surface (SF) of the film-forming material (Ma) with a directional component in the Z-axis direction in which the substrate (11) and the film-forming material (Ma) face each other. As a result, the plasma (P) can be incident in an appropriate incidence manner, and the film-forming material (Ma) can be uniformly evaporated.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2023-201077 filed on November 28, 2023. The entire content of the Japanese application is incorporated herein by reference. Technical Field

[0002] The present invention relates to a film forming apparatus. Background Art

[0003] As a film forming apparatus, as described in Patent Document 1, there is known a film forming apparatus that forms a film forming material on an object by an ion plating method. The film forming apparatus generates plasma in a chamber using a plasma gun, and sublimates the film forming material in the chamber. The film forming material adheres to the substrate and continues to accumulate, thereby growing on the substrate to form a film.

[0004] Patent Document 1: Japanese Patent Laid-Open No. 11-279751

[0005] Here, in the above film forming apparatus, it is desired to form a high-quality film with a uniform film thickness. In order to form a high-quality film, it is desired that the plasma be incident on the surface of the film forming material in an appropriate manner. Summary of the Invention

[0006] Therefore, an object of the present invention is to provide a film forming apparatus capable of improving the film quality.

[0007] The film forming apparatus according to the present invention forms a film forming material on an object by an RPD method, and the film forming apparatus includes: a chamber; a plasma gun that generates plasma in the chamber; an anode that is disposed in the chamber and can dispose the film forming material and guides the plasma; and a magnetic field generating unit that generates a magnetic field in the chamber. The magnetic field generating unit maintains the magnetic field such that a zero magnetic field position where the magnetic field in the chamber becomes zero is a specified position, thereby causing the plasma to be incident on the surface of the film forming material. The magnetic field generating unit sets the zero magnetic field position such that the plasma is incident on the surface of the film forming material with a direction component in a first direction in which the object and the film forming material face each other.

[0008] In the film forming apparatus according to the present invention, the magnetic field generating unit maintains the magnetic field such that a zero magnetic field position where the magnetic field in the chamber becomes zero is a specified position, thereby causing the plasma to be incident on the surface of the film forming material. Thus, the magnetic field generating unit adjusts the zero magnetic field position to an appropriate position, thereby enabling an appropriate magnetic field structure for causing the plasma to be incident on the surface of the film forming material to be formed. The magnetic field generating unit sets the zero magnetic field position such that the plasma is incident on the surface of the film forming material with a direction component in a first direction in which the object and the film forming material face each other. Thereby, the plasma can be incident in an appropriate incident manner, so that the film forming material evaporates uniformly. Thereby, the quality of the film formed on the object can be improved.

[0009] The magnetic field generation unit can set the zero magnetic field position in such a way that the plasma is incident on the entire surface of the film-forming material. Thereby, the film-forming material can be evaporated uniformly.

[0010] The magnetic field generation unit can have an annular furnace disposed around the anode. Thereby, the magnetic field can be adjusted around the anode.

[0011] The magnetic field generation unit can set the zero magnetic field position below the central axis of the plasma gun with respect to the surface of the film-forming material in the first direction. At this time, excessive diffusion of the plasma with respect to the film-forming material can be suppressed.

[0012] The magnetic field generation unit can set the zero magnetic field position at a position separated from the surface of the film-forming material by a width dimension of the film-forming material or more in the first direction. At this time, a space for diffusing the plasma with respect to the film-forming material can be ensured, and thus the plasma can be prevented from being incident only on a part of the surface of the film-forming material.

[0013] The magnetic field generation unit can set the zero magnetic field position at a position within the inner circumference of the annular furnace on the plasma gun side with respect to the central axis of the film-forming material in the second direction in which the central axis of the plasma gun extends. At this time, excessive deviation of the plasma toward the plasma gun side can be suppressed, and thus the plasma can be prevented from being incident only on a part of the surface of the film-forming material.

[0014] The magnetic field generation unit can set the zero magnetic field position at a position within the inner circumference of the anode on the side opposite to the plasma gun with respect to the central axis of the film-forming material in the second direction in which the central axis of the plasma gun extends. At this time, excessive deviation of the plasma toward the side opposite to the plasma gun can be suppressed, and thus the plasma can be prevented from being incident only on a part of the surface of the film-forming material.

[0015] The magnetic field generation unit can set the zero magnetic field position at a position where the distance from the surface of the film-forming material in the first direction is 65 mm to 105 mm. At this time, a space for diffusing the plasma with respect to the film-forming material can be ensured, and thus the plasma can be prevented from being incident only on a part of the surface of the film-forming material.

[0016] The magnetic field generation unit can set the zero magnetic field position at a position separated from the central axis of the film-forming material toward the plasma gun side by 20 mm to 55 mm in the second direction in which the central axis of the plasma gun extends. At this time, excessive deviation of the plasma toward the plasma gun side can be suppressed, and thus the plasma can be prevented from being incident only on a part of the surface of the film-forming material.

[0017] The magnetic field generating unit may further include at least one of the electrodes of the plasma gun and the steering coil of the plasma gun. At this time, the magnetic field can be adjusted on the plasma gun side.

[0018] According to the present invention, a film forming apparatus capable of improving film quality is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 is a schematic cross-sectional view of the film forming apparatus according to the embodiment of the present invention.

[0020] Figure 2 is a schematic diagram for explaining the magnetic field in the film forming apparatus.

[0021] Figure 3 is a schematic diagram showing an example of the incident mode of the plasma.

[0022] Figure 4 is a schematic diagram showing an example of the incident mode of the plasma.

[0023] Figure 5 is a schematic diagram showing an example of the incident mode of the plasma.

[0024] In the figure: 1 - film forming apparatus, 5 - steering coil, 6 - annular furnace, 7 - plasma gun, 10 - chamber, 11 - substrate (object), 17 - main furnace (anode), 61 - first intermediate electrode (electrode), 62 - second intermediate electrode (electrode), 70 - magnetic field generating unit, Ma - film forming material, SF - surface, ZMP - zero magnetic field position. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] Hereinafter, a film forming method and a film forming apparatus according to an embodiment of the present invention will be described with reference to the drawings. In addition, in the description of the drawings, the same reference numerals are assigned to the same components, and repeated descriptions are omitted.

[0026] First, refer to Figure 1 to describe the structure of the film forming apparatus according to the embodiment of the present invention. Figure 1 is a schematic cross-sectional view showing the structure of the film forming apparatus 1. As Figure 1As shown, the film forming apparatus 1 of the present embodiment is an RPD (Reactive Plasma Deposition) film forming apparatus for a so-called ion plating method, which is a kind of RPD method. The RPD method is characterized in that high-density plasma generated by using a plasma gun 7 is introduced into a film forming material Ma through a furnace mechanism 2, so that sublimation of the material and ionization of the material particles after sublimation are carried out in the same mechanism. Since high-density plasma is used in the RPD method, the ionization rate of the material particles is high, and a denser and more adherent film to the substrate can be formed compared with the ordinary ion plating method. In addition, for the sake of convenience of explanation, Figure 1 an XYZ coordinate system is shown in the figure. The Y-axis direction is the direction in which the central axis of the plasma gun 7 extends. The Z-axis direction is the direction in which the substrate faces the furnace mechanism described later. The X-axis direction is the direction orthogonal to the Y-axis direction and the Z-axis direction.

[0027] The film forming apparatus 1 may be a so-called horizontal film forming apparatus that arranges the substrate 11 in the chamber 10 so that the thickness direction of the substrate 11 (object) is substantially vertical and conveys it. At this time, the X-axis and Y-axis directions are horizontal directions, and the Z-axis direction becomes the vertical direction and the thickness direction. In addition, the film forming apparatus 1 may also be a so-called vertical film forming apparatus as follows: when the substrate 11 is arranged in the chamber 10 and conveyed in a state where the thickness direction of the substrate 11 is horizontal (the Z-axis direction in the figure) and is upright or inclined from the upright state. At this time, the Z-axis direction is the horizontal direction and the thickness direction of the substrate 11, the Y-axis direction is the horizontal direction, and the X-axis direction becomes the vertical direction. Hereinafter, taking the horizontal film forming apparatus as an example, a film forming apparatus according to an embodiment of the present invention will be described. Figure 1

[0028] The film forming apparatus 1 includes a chamber 10, a conveying mechanism 3, and a film forming mechanism 14.

[0029] The chamber 10 is a component for accommodating the substrate 11 and performing a film forming process. The chamber 10 has: a conveying chamber 10a for conveying the substrate 11 on which a film of the film forming material Ma is formed; a film forming chamber 10b for diffusing the film forming material Ma; and a plasma port 10c for allowing the chamber 10 to receive the plasma P irradiated in a beam shape from the plasma gun 7. The conveying chamber 10a, the film forming chamber 10b, and the plasma port 10c communicate with each other. The conveying chamber 10a is set along a specified conveying direction (arrow A in the figure) (along the Y-axis). And, the chamber 10 is made of a conductive material and is connected to the ground potential.

[0030] ​In the film formation chamber 10b, the wall portion 10W has: a pair of side walls extending along the conveyance direction (arrow A); a pair of side walls 10h and 10i extending along a direction (Z-axis direction) intersecting the conveyance direction (arrow A); and a bottom wall 10j disposed to intersect the Z-axis direction.

[0031] The conveyance mechanism 3 conveys the substrate holding member 16 that holds the substrate 11 in a state opposed to the film formation material Ma along the conveyance direction (arrow A). For example, the substrate holding member 16 is a frame that holds the outer peripheral edge of the substrate 11. The conveyance mechanism 3 is constituted by a plurality of conveyance rollers 15 provided in the conveyance chamber 10a. The conveyance rollers 15 are arranged at equal intervals along the conveyance direction (arrow A), and while supporting the substrate holding member 16, convey the substrate holding member 16 along the conveyance direction (arrow A). Further, the substrate 11 is, for example, a plate-like member such as a glass substrate or a plastic substrate.

[0032] Next, the structure of the film formation mechanism 14 will be described in detail. The film formation mechanism 14 attaches particles generated by sublimating the film formation material Ma to the substrate 11 by ion plating. The film formation mechanism 14 has a plasma gun 7, a deflection coil 5, a hearth mechanism 2, and an annular hearth 6.

[0033] The plasma gun 7 is, for example, a pressure gradient type plasma gun, and its main body is connected to the film formation chamber 10b via a plasma port 10c provided on the side wall of the film formation chamber 10b. The plasma gun 7 generates plasma P in the chamber 10. The plasma P generated in the plasma gun 7 is emitted from the plasma port 10c into the film formation chamber 10b in a beam shape. Thereby, plasma P is generated in the film formation chamber 10b.

[0034] The plasma gun 7 generates plasma by discharging argon gas introduced through a cathode 60. Between the cathode 60 and the plasma port 10c, a first intermediate electrode (grid) 61 and a second intermediate electrode (grid) 62 are concentrically arranged. Inside the first intermediate electrode 61, an annular permanent magnet 61a for converging the plasma P is provided. Inside the second intermediate electrode 62, an electromagnet coil 62a for converging the plasma P is also provided. Further, in the present embodiment, the first intermediate electrode 61 is disposed at a position closer to the cathode 60 than the second intermediate electrode 62, but the positional relationship thereof may be reversed.

[0035] The deflection coil 5 is provided around the plasma port 10c where the plasma gun 7 is installed. The deflection coil 5 guides the plasma P into the film formation chamber 10b. The deflection coil 5 is excited by a current supplied from a deflection coil power source (not shown).

[0036] The furnace mechanism 2 holds the film-forming material Ma. The furnace mechanism 2 is disposed in the film-forming chamber 10b of the chamber 10 and is arranged on the negative direction side in the Z-axis direction with respect to the conveying mechanism 3. The furnace mechanism 2 has a main furnace 17, and the main furnace 17 is a main anode that guides the plasma P emitted from the plasma gun 7 to the film-forming material Ma or a main anode that guides the plasma P emitted from the plasma gun 7 to itself. The structure of the main furnace will be described later.

[0037] The annular furnace 6 is an auxiliary anode having an electromagnet for inducing the plasma P. The annular furnace 6 is disposed around the container 17a of the main furnace 17 that holds the film-forming material Ma. The annular furnace 6 has a ring-shaped coil 20, a ring-shaped permanent magnet portion 9, and a ring-shaped container 12, and the coil 20 and the permanent magnet portion 9 are accommodated in the container 12. In the present embodiment, the permanent magnet portion 9 and the coil 20 are sequentially arranged in the negative direction of the Z-axis with respect to the conveying mechanism 3, but the coil 20 and the permanent magnet portion 9 may be sequentially arranged in the negative direction of the Z-axis. The annular furnace 6 controls the direction of the plasma P incident on the film-forming material Ma or the direction of the plasma P incident on the main furnace 17 according to the magnitude of the current flowing through the coil 20.

[0038] The gas supply unit 40 supplies a carrier gas and oxygen into the chamber 10. As the substance contained in the carrier gas, for example, noble gases such as argon and helium are used. The gas supply unit 40 is disposed outside the chamber 10 and supplies the raw material gas into the chamber 10 through a gas supply port provided on the side wall (for example, the side wall 10h) of the film-forming chamber 10b. The gas supply unit 40 supplies the carrier gas and oxygen based on the flow rate of the control signal from the control unit.

[0039] The power supply 80 supplies current to the plasma gun 7. Thereby, the plasma gun 7 discharges with a discharge current of a specified value. The power supply 80 is connected to the cathode (i.e., the plasma gun 7) and the anode (i.e., the main furnace 17). The power supply 80 supplies a current based on the current value of the control signal from the control unit 90. The control unit 90 is a device that controls the entire film-forming apparatus 1.

[0040] Next, refer to Figure 2The structure of the main furnace chamber 17 will be described in detail. The main furnace chamber 17 has the function of sublimating the film-forming material Ma. The main furnace chamber 17 has a cylindrical container 17a filled with the film-forming material Ma and extending toward the positive side in the Z-axis direction. Since the ground potential of the main furnace chamber 17 relative to the chamber 10 is maintained at a positive potential, the main furnace chamber 17 becomes an electrode (anode) during discharge and can attract the plasma P. A through-hole 17b for filling the film-forming material Ma is formed in the container 17a of the main furnace chamber 17 where the plasma P is incident. Moreover, the surface SF of the front end portion of the film-forming material Ma is exposed to the film-forming chamber 10b at one end of the through-hole 17b (reference Figure 1 ).

[0041] As the film-forming material Ma, for example, a conductive material such as ITO (indium tin oxide) or IWO (indium tungsten oxide) is used. When the film-forming material Ma is composed of a conductive substance, if the main furnace chamber 17 is irradiated with the plasma P, the plasma P will directly enter the film-forming material Ma, the surface SF of the front end portion of the film-forming material Ma will be heated and sublimated, and the film-forming material particles Mb ionized by the plasma P will diffuse into the film-forming chamber 10b (reference Figure 1 ). The film-forming material particles Mb diffused into the film-forming chamber 10b are ionized by the plasma P, move toward the positive side in the Z-axis direction of the film-forming chamber 10b, and adhere to the surface of the substrate 11 in the transfer chamber 10a (reference Figure 1 ). In addition, the film-forming material Ma is a solid object formed into a cylindrical shape with a specified length, and a plurality of film-forming materials Ma are filled in the furnace mechanism 2 at one time. Then, in order to keep the film-forming (sublimation) speed constant, the film-forming material Ma is sequentially pushed from the negative side in the Z-axis direction of the furnace mechanism 2 according to the sublimation of the film-forming material Ma, so that the front end portion of the frontmost film-forming material Ma maintains a specified positional relationship with the upper end of the main furnace chamber 17.

[0042] The film-forming material Ma can also be an insulating substance such as silicon oxide or tin oxide, for example. When the film-forming material Ma is composed of an insulating substance, the plasma P enters the upper end portion 17c of the main furnace chamber 17. As a result, the main furnace chamber 17 is heated, and the film-forming material Ma is heated and sublimated.

[0043] As Figure 2As shown, the film forming apparatus 1 includes a magnetic field generating unit 70. The magnetic field generating unit 70 is a mechanism that generates a magnetic field MF in the chamber 10. In the present embodiment, the magnetic field generating unit 70 includes an annular furnace 6, a steering coil 5 of the plasma gun 7, electrodes 61 and 62 of the plasma gun 7, and a control unit 90. The annular furnace 6 generates a magnetic field MF1 near the main furnace 17 and the film forming material Ma. The magnetic field MF1 expands in a manner that diffuses from the end on the positive Z-axis direction side of the annular furnace 6 toward the positive Z-axis direction side. The steering coil 5 generates a magnetic field MF2. The magnetic field MF2 expands in a manner that surrounds the steering coil 5 and heads toward the positive Y-axis direction side from the inner peripheral side. The electrodes 61 and 62 generate a magnetic field MF3. The magnetic field MF3 expands in a manner that diffuses from the front end side of the plasma gun 7 toward the positive Y-axis direction side. The magnetic field generating unit 70 generates a magnetic field MF (cusped magnetic field) for adjusting the distribution of the plasma P through the combination of these magnetic fields MF1, MF2, and MF3. The control unit 90 controls the magnetic fields MF1, MF2, and MF3 by controlling the currents of the coil 20 of the annular furnace 6, the steering coil 5, and the coil 62a of the second intermediate electrode 62. Therefore, the control unit 90 can control the magnetic field MF by controlling the currents supplied to the coils 20, 5, and 62a.

[0044] The magnetic field generating unit 70 maintains the magnetic field MF such that the zero magnetic field position ZMP where the magnetic field MF in the chamber 10 becomes zero is at a specified position, so that the plasma P is incident on the surface SF of the film forming material Ma (refer to Figures 3 to 5 ). The plasma P is ejected from the plasma gun 7 and is incident on the surface SF of the film forming material Ma and the end face on the positive Z-axis direction side of the annular furnace 6. However, at the zero magnetic field position ZMP, the magnetic flux is in a state where it does not extend in any of the three-dimensional directions. In addition, the method for determining the zero magnetic field position ZMP is not particularly limited. For example, the brightest point of the plasma P can be determined based on an image of the plasma P (or using a sensor, etc.), and thus the zero magnetic field position ZMP can be determined. Also, the zero magnetic field position ZMP can be determined by measuring the inside of the chamber 10 using a gaussmeter.

[0045] The magnetic field generation unit 70 can keep the position of the zero magnetic field position ZMP fixed by maintaining the generation mode of the magnetic field MF. That is, the position of the zero magnetic field position ZMP changes according to the change in the magnetic flux distribution of the magnetic field MF. Therefore, if the magnetic field generation unit 70 maintains the magnetic flux distribution of the magnetic field MF at a certain distribution, the zero magnetic field position ZMP will also be maintained at a fixed position. Specifically, the control unit 90 can keep the zero magnetic field position ZMP fixed by maintaining the current values of the respective coils 20, 5, and 62a at constant values. According to the change in the magnetic flux distribution of the magnetic field MF, the behavior of the plasma P in the chamber 10 changes, and the incident mode of the plasma P on the surface SF of the film-forming material Ma also changes. Therefore, a correlation is established between the position of the zero magnetic field position ZMP and the incident mode of the plasma P on the surface SF. The incident mode of the plasma P on the surface SF depends, for example, on the incident direction of the plasma P on the surface SF and the incident range of the plasma P on the surface SF, etc.

[0046] As Figure 3 shown, the magnetic field generation unit 70 sets the zero magnetic field position ZMP in such a way that the plasma P has a direction component in the Z-axis direction (the first direction), which is the direction in which the substrate 11 (refer to Figure 1 ) faces the film-forming material Ma, and is incident on the surface SF of the film-forming material Ma. The plasma P is incident on the surface SF of the film-forming material Ma from a plurality of incident directions D1. However, these incident directions D1 have a direction component from the positive direction side to the negative direction side of the Z-axis direction. In addition, in Figure 3 and Figure 4 the example shown, there is an incident direction D1 that is substantially parallel to the Z-axis direction. On the other hand, in Figure 5 the example shown, the incident direction D1 has an incident direction D1 that is mostly inclined with respect to the Z-axis direction.

[0047] The magnetic field generation unit 70 can set the zero magnetic field position ZMP in such a way that the plasma P is incident on the entire surface SF of the film-forming material Ma. In Figure 3 the example shown, the end face on the positive direction side of the Z-axis direction of the film-forming material Ma is exposed from the main furnace chamber 17 on the inner peripheral side of the main furnace chamber 17. In this way, the entire region from the peripheral edge portion to the central position of the exposed surface SF is covered by the plasma P. This state is the case where the plasma P is incident on the entire surface SF of the film-forming material Ma. On the other hand, in Figure 4 and Figure 5 the example shown, there are portions on a part of the surface SF that are not covered by the plasma P. This state does not belong to the case where the plasma P is incident on the entire surface SF of the film-forming material Ma.

[0048] Next, referring to Figure 2The preferred set position of the zero magnetic field position ZMP will be described. In addition, in the following description, as Figures 2 to 5 shown, the position of the zero magnetic field position ZMP when viewed from the direction perpendicular to the central axis CL1 of the plasma gun 7 and the central axis CL2 of the main furnace 17 (here, the X-axis direction) will be described. In addition, when the positions of the central axis CL1 and the central axis CL2 in the X-axis direction are the same, the position of the zero magnetic field position ZMP in the X-axis direction is set at the same position as the central axes CL1 and CL2. When the positions of the central axis CL1 and the central axis CL2 in the X-axis direction are different, the position of the zero magnetic field position ZMP in the X-axis direction is set at a position between the central axis CL1 and the central axis CL2.

[0049] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position below the central axis CL1 of the plasma gun 7 with respect to the surface SF of the film-forming material Ma in the Z-axis direction. A reference line SLA1 extending in the Y-axis direction is set at the position of the central axis CL1 of the plasma gun 7. At this time, the zero magnetic field position ZMP is set on the reference line SLA1 or at a position on the negative side in the Z-axis direction with respect to the reference line SLA1.

[0050] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position separated from the surface SF of the film-forming material Ma by a width dimension H or more of the film-forming material Ma in the Z-axis direction. A reference line SLA2 parallel to the Y-axis direction is set at a position separated from the surface SF by the width dimension H in the Z-axis direction. At this time, the zero magnetic field position ZMP is set on the reference line SLA2 or at a position on the positive side in the Z-axis direction with respect to the reference line SLA2. In the present embodiment, the surface SF of the film-forming material Ma is pressed and always remains constant. In addition, the surface SF does not necessarily have to be always constant. At this time, the reference position STP that becomes the reference on the negative side in the Z-axis direction when defining the range of the width dimension H can be set at the surface SF of the film-forming material Ma at the start of film formation. At this time, even if the position of the surface SF of the film-forming material Ma moves downward with evaporation, the reference position STP remains constant. Alternatively, the reference position STP can also be set at the position of the upper end portion 17c on the positive side in the Z-axis direction of the main furnace 17.

[0051] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position within the inner circumference of the annular furnace 6 on the plasma gun 7 side with respect to the central axis CL2 of the film-forming material Ma in the Y-axis direction (second direction) in which the central axis CL1 of the plasma gun 7 extends, and within the inner circumference of the annular furnace 6. A reference line SLB1 extending in the Z-axis direction is set at the position of the inner circumference of the annular furnace 6 at the position of the end portion 6a on the plasma gun 7 side (negative direction side in the Y-axis direction). At this time, the zero magnetic field position ZMP is set on the reference line SLB1 or at a position closer to the positive direction side in the Y-axis direction than the reference line SLB1.

[0052] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position within the inner circumference of the main furnace 17 on the side opposite to the plasma gun 7 with respect to the central axis CL2 of the film-forming material Ma in the Y-axis direction in which the central axis CL1 of the plasma gun 7 extends. A reference line SLB2 extending in the Z-axis direction is set at the position of the inner circumference of the annular furnace 6 at the position of the end portion 17d on the side opposite to the plasma gun 7 side (positive direction side in the Y-axis direction). At this time, the zero magnetic field position ZMP is set on the reference line SLB2 or at a position closer to the negative direction side in the Y-axis direction than the reference line SLB2.

[0053] Next, refer to Figures 3 to 5 to describe the position of the zero magnetic field position ZMP and the state of the plasma P. In Figure 3 the example shown, the zero magnetic field position ZMP is set at a position between the reference line SLA1 and the reference line SLA2 in the Z-axis direction. The zero magnetic field position ZMP is set at a position between the reference line SLB1 and the reference line SLB2 in the Y-axis direction. At this time, the plasma P can be sufficiently diffused during the movement toward the film-forming material Ma. As a result, the plasma P is incident on the entire surface SF of the film-forming material Ma.

[0054] In Figure 4 the example shown, the zero magnetic field position ZMP is set at a position closer to the negative direction side in the Z-axis direction than the reference line SLA2. The zero magnetic field position ZMP is set at a position between the reference line SLB1 and the reference line SLB2 in the Y-axis direction. At this time, the plasma P cannot be sufficiently diffused during the movement toward the film-forming material Ma. As a result, the plasma P is incident on a partial range of the surface SF of the film-forming material Ma, rather than on the entire surface SF.

[0055] In Figure 5In the example shown, the zero magnetic field position ZMP is set at a position between reference line SLA1 and reference line SLA2 in the Z-axis direction. The zero magnetic field position ZMP is set at a position on the positive side in the Y-axis direction, closer to the Y-axis than reference line SLB2. At this time, the plasma P is incident on the film-forming material Ma while being biased toward the positive side in the Y-axis direction. The plasma P is incident on the surface SF of the film-forming material Ma in an inclined state. As a result, the plasma P is incident on a partial range of the surface SF of the film-forming material Ma, rather than on the entire surface SF.

[0056] Next, the preferred range of the zero magnetic field position ZMP based on the results of the film-forming simulation tests will be described. As a result of in-depth research by the present inventors, it was found that the range of the current in which the plasma P can be incident on the surface of the film-forming material Ma and a transparent conductive film with low resistance / high transparency can be formed is as follows: for the steering coil 5, it is "10 A to 20 A", and for the toroidal furnace 6, it is "20 A to 40 A". Based on these ranges of current values, film-forming simulation tests were conducted. At this time, the magnetic field formed inside the chamber 10 was calculated. The simulation test conditions other than the coil current at this time are as follows. In addition, the size of the chamber 10 was set to "X (610 mm) × Y (500 mm) × Z (560 mm)".

[0057] The distance from the central axis CL2 of the film-forming material Ma to the zero magnetic field position ZMP on the plasma gun 7 side in the Y-axis direction is set as "Y". The distance from the surface SF of the film-forming material Ma in the Z-axis direction is set as "Z". When the steering coil current is set to 20 A and the toroidal furnace current is set to 20 A as "Condition 1", Z became 70.2 mm and Y became 38.0 mm. When the steering coil current is set to 15 A and the toroidal furnace current is set to 25 A as "Condition 2", Z became 79.8 mm and Y became 38.6 mm. When the steering coil current is set to 10 A and the toroidal furnace current is set to 40 A as "Condition 3", Z became 98.1 mm and Y became 49.8 mm. In "Condition 1", the zero magnetic field position ZMP is located closest to the film-forming material Ma side. In "Condition 3", the zero magnetic field position ZMP is located closest to the plasma gun 7 side. From this result, it was found that a range where "Y" is 38.0 mm to 49.8 mm and "Z" is 70.2 mm to 98.1 mm is a suitable range as the zero magnetic field position ZMP.

[0058] The applicant found that in the actual film-forming apparatus 1, in order to adjust the incident position of the plasma P, considering the deviation from the above-described simulation test model, setting "Y" in the range of 20 mm to 55 mm and "Z" in the range of 65 mm to 105 mm is an appropriate range as the zero magnetic field position ZMP. In addition, the current range of each coil is not limited to the current range in the above simulation test. By adjusting the current to the current range, the zero magnetic field position ZMP can be set within Figures 2 to 5 the ranges of the reference lines SLA1, SLA2, SLB1, and SLB2 described in

[0059] Next, the operation and effect of the film-forming apparatus 1 according to the present embodiment will be described.

[0060] In the film-forming apparatus 1 according to the present embodiment, the magnetic field generation unit 70 maintains the magnetic field MF in such a manner that the zero magnetic field position ZMP where the magnetic field MF in the chamber 10 becomes zero becomes a specified position, so that the plasma P is incident on the surface SF of the film-forming material Ma. In this way, the magnetic field generation unit 70 adjusts the zero magnetic field position ZMP to an appropriate position, thereby enabling an appropriate magnetic field structure for the plasma P to be incident on the surface SF of the film-forming material Ma to be formed. The magnetic field generation unit 70 sets the zero magnetic field position ZMP in such a manner that the plasma P is incident on the surface SF of the film-forming material Ma with a direction component in the Z-axis direction in which the substrate 11 and the film-forming material Ma face each other. Thereby, the plasma P can be incident in an appropriate incident manner, so that the film-forming material Ma evaporates uniformly. Thereby, the quality of the film formed on the substrate 11 can be improved. In addition, depending on the material of the film, electrical characteristics, optical characteristics, etc. can also be improved.

[0061] The magnetic field generation unit 70 may set the zero magnetic field position ZMP in such a manner that the plasma P is incident on the entire surface SF of the film-forming material Ma. Thereby, the film-forming material Ma can be evaporated uniformly.

[0062] The magnetic field generation unit 70 may include an annular furnace 6 disposed around the main furnace 17. Thereby, the magnetic field MF can be adjusted around the main furnace 17.

[0063] The magnetic field generation unit 70 may set the zero magnetic field position ZMP below the central axis CL1 of the plasma gun 7 with respect to the surface SF of the film-forming material Ma in the Z-axis direction. At this time, excessive diffusion of the plasma P with respect to the film-forming material Ma can be suppressed.

[0064] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position in the Z-axis direction that is separated from the surface SF of the film-forming material Ma by a distance greater than or equal to the width dimension H of the film-forming material Ma. At this time, a space for diffusing the plasma P with respect to the film-forming material Ma can be ensured, thereby suppressing the plasma P from being incident only on a part of the surface SF of the film-forming material Ma.

[0065] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position within the inner circumference of the annular furnace 6 on the plasma gun 7 side with respect to the central axis CL2 of the film-forming material Ma in the Y-axis direction in which the central axis CL1 of the plasma gun 7 extends. At this time, the plasma P can be prevented from leaning excessively toward the plasma gun 7 side, thereby suppressing the plasma P from being incident only on a part of the surface SF of the film-forming material Ma.

[0066] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position within the inner circumference of the main furnace 17 on the side opposite to the plasma gun 7 with respect to the central axis CL2 of the film-forming material Ma in the Y-axis direction in which the central axis CL1 of the plasma gun 7 extends. At this time, the plasma P can be prevented from leaning excessively toward the side opposite to the plasma gun 7, thereby suppressing the plasma P from being incident only on a part of the surface SF of the film-forming material Ma.

[0067] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position where the distance from the surface SF of the film-forming material Ma in the Z-axis direction is 65 mm to 105 mm. At this time, a space for diffusing the plasma P with respect to the film-forming material Ma can be ensured, thereby suppressing the plasma P from being incident only on a part of the surface SF of the film-forming material Ma.

[0068] The magnetic field generation unit 70 can set the zero magnetic field position ZMP at a position separated by 20 mm to 55 mm from the central axis CL2 of the film-forming material Ma toward the plasma gun 7 side in the Y-axis direction in which the central axis CL1 of the plasma gun 7 extends. At this time, the plasma P can be prevented from leaning excessively toward the plasma gun 7 side, thereby suppressing the plasma P from being incident only on a part of the surface SF of the film-forming material Ma.

[0069] The magnetic field generation unit 70 may further include at least one of the electrodes 61 and 62 of the plasma gun 7 and the steering coil 5 of the plasma gun 7. At this time, the magnetic field MF can be adjusted on the plasma gun 7 side.

[0070] Here, in the present embodiment, as the mechanism for arranging the substrate 11, a mechanism for continuously conveying the substrate 11 (continuous film formation method) is adopted. In this continuous film formation method, film formation is performed while moving the substrate 11 along the plasma emission direction of the plasma gun 7. Since the film is likely to be distributed in the plasma P emission direction, it is preferable to move the substrate 11 in this direction. Compared with the film formation apparatus according to the comparative example (where the zero magnetic field position ZMP is outside the specified range), in the continuous film formation method, the direction of the uniform film thickness distribution is the direction (X-axis direction) intersecting the direction in which the substrate 11 moves. In addition, regarding the mechanism for arranging the substrate 11, it is not limited to the continuous film formation method, and a batch method of arranging the substrate 11 in the chamber 10 each time may also be used.

[0071] In addition, when the film formation material Ma is an insulating material, the plasma P enters the front end portion of the main furnace chamber 17, but by setting the zero magnetic field position ZMP within the ranges of the reference lines SLA1, SLA2, SLB1, and SLB2, the plasma P can be appropriately incident on the entire front end portion of the main furnace chamber 17.

[0072] The present invention is not limited to the above-described embodiments of the film formation apparatus.

[0073] The positions, sizes, orientations, angles, etc. of the respective components of the above-described film formation apparatus can be appropriately changed without departing from the gist of the present invention. For example, the emission direction of the plasma gun 7 may not be parallel to the Y-axis and may be inclined. The magnetic field generation unit does not necessarily need to include all of the annular furnace chamber, the electrodes of the plasma gun, and the steering coil, and a part of them may be omitted.

Claims

1. A film forming device for forming a film forming material on an object by an RPD method, characterized in that: have: Chamber; a plasma gun to generate plasma in the chamber; an anode, which is disposed in the chamber and capable of disposing the film-forming material and guiding the plasma; and a magnetic field generating unit for generating a magnetic field in the chamber, The magnetic field generating unit maintains the magnetic field so that a zero magnetic field position where the magnetic field in the chamber becomes zero becomes a predetermined position, thereby causing the plasma to be incident on the surface of the film forming material. The magnetic field generating unit sets the zero magnetic field position so that the plasma is incident on the surface of the film forming material with a direction component in a first direction in which the object and the film forming material face each other.

2. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position so that the plasma is incident on the entire surface of the film forming material.

3. The film forming device according to claim 1, characterized in that: The magnetic field generating unit includes an annular furnace disposed around the anode.

4. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position at a position below the central axis of the plasma gun with respect to the surface of the film forming material in the first direction.

5. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position at a position that is spaced apart from the surface of the film forming material by a width dimension of the film forming material or more in the first direction.

6. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position at a position within the inner periphery of the annular hearth located on the plasma gun side relative to the central axis of the film forming material in a second direction in which the central axis of the plasma gun extends.

7. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position at a position within the inner periphery of the anode located on the opposite side of the plasma gun with respect to the central axis of the film forming material in a second direction in which the central axis of the plasma gun extends.

8. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position at a position that is 65 mm to 105 mm away from the surface of the film forming material in the first direction.

9. The film forming device according to claim 1, characterized in that: The magnetic field generating unit sets the zero magnetic field position at a position separated by 20 mm to 55 mm from the central axis of the film forming material toward the plasma gun in a second direction in which the central axis of the plasma gun extends.

10. The film forming device according to claim 3, characterized in that: The magnetic field generating unit further includes at least one of an electrode of the plasma gun and a steering coil of the plasma gun.

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