Photoelectric packaging structure, preparation method thereof and camera module
By opening channels in the substrate module and setting a conductive layer to form a hollow conductive channel, the problem that the packaging structure in the prior art is not conducive to miniaturization is solved, and a photoelectric packaging structure with stable electrical connection and compact structure is realized.
Patent Information
- Application Number
- CN202410063768.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-16
- Publication Date
- 2025-07-25
AI Technical Summary
In the prior art, wire-tight packaging technology is limited by wire-tight tools, which makes the connection path between the photosensitive chip and the circuit board larger in lateral dimensions, which is not conducive to the development of miniaturization; the crystal-covered packaging technology requires the substrate to have high flatness and symmetrical distribution solder joints, which are not very universal.
A channel is opened in the substrate module, and a conductive layer is provided in the channel to form a hollow conductive channel, which realizes the electrical connection between the non-photosensitive area of the substrate and the photosensitive chip, eliminating the setting of the metal wire, and the channel shape can be adjusted according to the needs to reduce the lateral path and thickness.
The stable electrical connection between the substrate and the photosensitive chip is realized, the lateral size and thickness of the packaging structure are reduced, and the limitation on the distribution of metal wires and solder joints is avoided, which helps the miniaturization of the packaging structure.
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Figure CN120379398A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor packaging technologies, and particularly to an optoelectronic packaging structure, a preparation method thereof, and an imaging module. Background Art
[0002] An imaging module generally includes a substrate and an image sensor chip disposed on the substrate. After the image sensor chip is packaged, a wire bonding packaging technology or a flip chip packaging technology is usually adopted to realize the signal connection between the substrate and the image sensor chip. However, the wire bonding packaging technology is limited by the wire bonding tool, resulting in a relatively large lateral dimension of the connection path between the image sensor chip and the circuit board, which is not conducive to miniaturization development. The flip chip packaging technology requires the substrate to have a high flatness and symmetrically distributed solder joints, resulting in poor universality. Summary of the Invention
[0003] In view of this, the present application provides an optoelectronic packaging structure, a preparation method thereof, and an imaging module to solve the above problems.
[0004] The present application provides an optoelectronic packaging structure, which includes a substrate module and an image sensor chip. The substrate module includes a substrate, and a plurality of channels are defined in the substrate module; the image sensor chip is disposed on the substrate, and the image sensor chip includes a photosensitive area and a non-photosensitive area connected to the photosensitive area; wherein, two ends of the channel respectively extend to the substrate and the non-photosensitive area, and a conductive layer is provided on the inner wall of the channel to form a hollow conductive channel, and the hollow conductive channel is electrically connected to the substrate and the non-photosensitive area.
[0005] In some embodiments, the substrate includes a first surface and a second surface which are oppositely disposed, the substrate module further includes a molding compound, the molding compound and the image sensor chip are disposed on the same surface of the substrate, the molding compound at least adheres to the side wall of the image sensor chip, and the channel is disposed in the substrate or the molding compound.
[0006] In some embodiments, the image sensor chip is disposed on the first surface, the channel is disposed on the molding compound, the channel includes a first channel, a second channel, and a third channel, the second channel is connected between the first channel and the third channel, the first channel and the third channel both extend along the thickness direction of the image sensor chip, one end of the first channel communicates with the substrate, and one end of the third channel communicates with the non-photosensitive area.
[0007] In some embodiments, the encapsulant includes a first encapsulation block and a second encapsulation block disposed on the first encapsulation block. The first encapsulation block is attached to the sidewall of the photosensitive chip. The second encapsulation block covers at least a portion of the non-photosensitive area. The first channel penetrates through the first encapsulation block and extends to the second encapsulation block. The third channel penetrates through the second encapsulation block. The second channel is exposed on the second encapsulation block.
[0008] In some embodiments, a protective film is further provided on the surface of the second encapsulation block, and the protective film covers the second channel.
[0009] In some embodiments, the conductive material of the conductive layer includes conductive ink or conductive silver paste.
[0010] In some embodiments, an opening is provided on the substrate. The photosensitive chip is disposed on the second surface and the photosensitive area is exposed to the opening. The non-photosensitive area is attached to the second surface. The channel penetrates through the substrate. One end of the channel extends to the non-photosensitive area. The hollow conductive channel is electrically connected to the non-photosensitive area.
[0011] In some embodiments, the optoelectronic packaging structure further includes components, and the components are sealed within the encapsulant, or disposed outside the encapsulant, or disposed on the substrate.
[0012] In some embodiments, the thickness of the conductive layer is greater than or equal to 500 nm.
[0013] The present application further provides a method for manufacturing an optoelectronic packaging structure, including: disposing a photosensitive chip on a substrate of a substrate module; forming a plurality of channels within the substrate module, with both ends of the channels extending to the substrate and the non-photosensitive area of the photosensitive chip respectively; disposing a conductive layer on the inner wall of the channels to form a hollow conductive channel, and the hollow conductive channel is electrically connected to the substrate and the non-photosensitive area, thereby obtaining the optoelectronic packaging structure.
[0014] In some embodiments, the substrate includes a first surface and a second surface disposed opposite to each other. The substrate module further includes an encapsulant. The photosensitive chip and the encapsulant are disposed on the same surface of the substrate. The encapsulant is at least attached to the sidewall of the photosensitive chip.
[0015] In some embodiments, the channel is formed in the encapsulant, and the step of disposing the photosensitive chip on the substrate includes: disposing a second encapsulation block on the non-photosensitive area of the photosensitive chip; fixing the photosensitive chip with the second encapsulation block on the substrate, and a pre-encapsulation body is further disposed on the substrate, and the pre-encapsulation body at least adheres to the side wall of the photosensitive chip; curing the pre-encapsulation body to obtain a first encapsulation block, and the first encapsulation block and the second encapsulation block form the encapsulant.
[0016] In some embodiments, when the photosensitive chip is fixed on the substrate, the pre-encapsulation body is disposed between the photosensitive chip and the substrate and extends to the side wall of the photosensitive chip.
[0017] In some embodiments, the channel is formed in the substrate, and the step of disposing the photosensitive chip on the substrate includes: fixing the photosensitive chip on the second surface, the photosensitive chip further includes a photosensitive area connected to the non-photosensitive area, an opening is formed in the substrate, the photosensitive area is received in the opening, the non-photosensitive area adheres to the second surface, and a pre-encapsulation body is further disposed on the second surface, and the pre-encapsulation body at least adheres to the side wall of the photosensitive chip; curing the pre-encapsulation body to obtain the encapsulant. In some embodiments, disposing the conductive layer on the inner wall of the channel includes: disposing a conductive material in the channel, and curing the conductive material to form the conductive layer on the inner wall of the channel.
[0018] In some embodiments, the conductive material includes conductive ink or conductive silver paste.
[0019] In some embodiments, the conductive material is the conductive ink, and curing the conductive ink includes a first curing stage and a second curing stage that are sequentially performed; the first curing stage includes: after spraying the conductive ink in the channel, irradiating the conductive ink with ultraviolet light to pre-cure the conductive ink; the second curing stage includes: baking the pre-cured conductive ink to obtain the conductive layer.
[0020] In some embodiments, after the photosensitive chip is disposed on the substrate to obtain an encapsulation unit, before manufacturing the encapsulation unit, the preparation method further includes: providing a plate, the plate includes a plurality of substrates arranged in an array, and a to-be-cut area is formed between adjacent substrates; manufacturing each substrate into the encapsulation unit; disposing the conductive layer in the encapsulation unit to form the hollow conductive channel, and then cutting the plate along the to-be-cut area, so as to obtain a plurality of the optoelectronic packaging structures.
[0021] The present application also provides an imaging module, including a lens and an optoelectronic packaging structure, and the lens is disposed on the substrate module in the optoelectronic packaging structure.
[0022] In the present application, by forming a channel on the substrate module and disposing a conductive layer in the channel to form a hollow conductive channel, the hollow conductive channel can realize the electrical connection between the substrate and the non-photosensitive area, eliminating the need for wire setting and not being limited by the shape of the wire bonding tool. In the present application, the shape of the channel can be adjusted according to requirements to adjust the position of the hollow conductive channel, without being limited by the wire bonding tool, and the lateral path between the substrate and the non-photosensitive area can be reduced. Since the shape of the channel can also be adjusted according to the installation positions of other components in the present application, to a certain extent, the thickness of the photosensitive chip packaging can also be reduced, and other functional components are not restricted from being arranged around the area where the wire is located due to the brittleness of the wire, which is beneficial to the miniaturization development of the packaging structure. At the same time, compared with the flip-chip packaging technology, in the present application, by forming a conductive layer on the inner wall of the channel, it is not limited to using a chip with symmetrically distributed solder joints, and is not restricted by the size of the metal balls, resulting in too high requirements for the flatness of the substrate as in the related art. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 It is a schematic structural diagram of an imaging module provided by the present application.
[0024] Figure 2 In one embodiment Figure 1 It is a schematic structural diagram of the optoelectronic packaging structure of the imaging module shown.
[0025] Figure 3 It is Figure 2 A schematic structural diagram of the optoelectronic packaging structure shown in another embodiment.
[0026] Figure 4 It is Figure 2 A schematic structural diagram of the optoelectronic packaging structure shown in another embodiment.
[0027] Figure 5 It is Figure 2 A schematic structural diagram of the optoelectronic packaging structure shown in another embodiment.
[0028] Figure 6 It is Figure 2 A top view of the sheet material of the optoelectronic packaging structure shown.
[0029] Figure 7 It is a schematic structural diagram after the second encapsulation block is disposed on the photosensitive chip.
[0030] Figure 8 It is Figure 7 A schematic structural diagram after the sheet material is disposed on the photosensitive chip shown.
[0031] Figure 9 Schematic diagram of the structure after laminating the substrate and the photosensitive chip shown Figure 8 in the figure
[0032] Figure 10 Schematic diagram of the structure for opening a channel on the plastic package shown Figure 9 in the figure
[0033] Figure 11 Schematic diagram of the structure for forming a conductive layer in the channel shown Figure 10 in the figure
[0034] Figure 12 Schematic diagram of the optoelectronic packaging structure provided by another embodiment of the present application
[0035] Description of main component symbols
[0036] Optoelectronic packaging structure 100
[0037] Substrate module 5
[0038] Substrate 10
[0039] First surface 11
[0040] Second surface 12
[0041] Opening 13
[0042] Photosensitive chip 20
[0043] Photosensitive area 21
[0044] Non - photosensitive area 22
[0045] Plastic package 30
[0046] First plastic block 31
[0047] Second plastic block 32
[0048] Hollow conductive channel 6
[0049] Channel 40
[0050] First channel 41
[0051] Second channel 42
[0052] Third channel 43
[0053] Conductive layer 50
[0054] Protective film 60
[0055] Components 70
[0056] Adhesive layer 80
[0057] Plastic encapsulated preform 90
[0058] Sheet material 1000
[0059] Encapsulation unit 200
[0060] Area to be cut 300
[0061] Camera module 1
[0062] Lens assembly 2
[0063] Lens 3
[0064] Lens mount 4
[0065] The following specific embodiments will further illustrate the present application in conjunction with the above-mentioned appendices Figure 1-12 This application will be further described Specific embodiments
[0066] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments
[0067] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. When an element is considered to be "disposed on" another element, it can be directly disposed on the other element or there may be an intermediate element at the same time
[0068] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used in the description of this application herein are only for the purpose of describing specific embodiments and are not intended to limit this application
[0069] In the related art, the packaging structures of optoelectronic sensing elements usually adopt wire bonding packaging technology and flip chip packaging technology to realize the signal connection between the substrate and the chip
[0070] In the wire bonding packaging technology, metal wires are used to connect the substrate and the chip to realize the signal connection between the chip and the substrate. However, this technology is limited by the shape of the wire bonding tool, so that a relatively large lateral distance needs to be reserved for the connection path from the chip end to the substrate end. And the metal wires are extremely thin and brittle, so that other components cannot be installed in the area occupied by the metal wires
[0071] In flip-chip packaging technology, metal balls or short metal columns are used to connect the substrate and the chip to achieve signal connection between the chip and the substrate. During the packaging process, due to the size limitation of the metal balls, not only is the flatness requirement for the substrate quite high, but also during the flip-chip soldering process, all solder joints are joined at once. When applying pressure or ultrasonic energy to the chip surface, considering the average degree of energy transfer, only chips with symmetrically distributed solder joints can be used. This technology has poor universality and is not conducive to the development of chip miniaturization.
[0072] To further elaborate on the technical means and effects adopted by this application to achieve the predetermined purpose, the following provides a detailed description of this application in combination with the drawings and embodiments.
[0073] To improve the above problems, refer to Figure 1 , this application provides an imaging module 1. The imaging module 1 includes a lens assembly 2 and has an optoelectronic packaging structure 100. The lens assembly 2 has a light-sensing path for external light to pass through. The optoelectronic packaging structure 100 is used to receive the external light passing through the lens assembly 2 to form an optical signal and convert the optical signal into a corresponding electrical signal, that is, to achieve optoelectronic conversion.
[0074] The lens assembly 2 includes a lens 3 and a lens holder 4. The lens holder 4 is disposed on the optoelectronic packaging structure 100, and the lens 3 is disposed on the lens holder 4. External light enters the imaging module 1 through the lens 3.
[0075] Please refer to Figure 1 and Figure 2 , the optoelectronic packaging structure 100 includes a substrate module 5 and a photosensitive chip 20. The substrate module 5 includes a substrate 10 and a plastic package 30. The plastic package 30 is disposed on the substrate 10. The lens holder 4 is disposed on the substrate 10 or the plastic package 30. When the lens holder 4 is disposed on the plastic package 30, the lateral size of the imaging module 1 can be reduced, which is conducive to the development of miniaturization of the imaging module 1. When the lens holder 4 is disposed on the substrate 10 (not shown in the figure), the substrate 10 is accommodated within the lens holder 4. In this embodiment, an example is given with the lens holder 4 disposed on the plastic package 30, and the photosensitive chip 20 is encapsulated on the plastic package 30.
[0076] Refer to Figure 1 and Figure 2 , the substrate 10 includes a first surface 11 and a second surface 12 disposed opposite to each other. The photosensitive chip 20 is disposed on the first surface 11 or the second surface 12 of the substrate 10. The photosensitive chip 20 includes a photosensitive area 21 and a non-photosensitive area 22 connecting the photosensitive area 21. The photosensitive area 21 is used to receive the optical signal formed by the external light passing through the lens 3 and convert the optical signal into an electrical signal.
[0077] Refer to Figure 2, there are multiple channels 40 formed in the substrate module 5, and both ends of the channels 40 extend to the substrate 10 and the non-photosensitive area 22 respectively. A conductive layer 50 is formed on the inner wall of the channel 40 to form a hollow conductive channel 6. The hollow conductive channel 6 is electrically connected to the substrate 10 and the non-photosensitive area 22. Both ends of the conductive layer 50 extend to the substrate 10 and the non-photosensitive area 22.
[0078] In the above technical solution, both ends of the channel 40 are connected to the corresponding electrical connection points (such as pads) of the photosensitive chip 20 and the substrate 10. Both ends of the hollow conductive channel 6 are electrically connected to the electrical connection points on the photosensitive chip 20 and the substrate 10, that is, both ends of the conductive layer 50 are electrically connected to the electrical connection points on the photosensitive chip 20 and the substrate 10, thereby realizing the electrical connection between the non-photosensitive area 22 of the photosensitive chip 20 and the substrate 10. The technical solution provided by this application eliminates the setting of metal wires. Moreover, this application can also adjust the shape of the channel 40 according to requirements, so as to adjust the shape of the hollow conductive channel 6, and is not limited by the wire bonding tool, which is beneficial to reducing the lateral path between the substrate 10 and the non-photosensitive area 22. Since this application can also adjust the shape of the channel 40 corresponding to the installation positions of other components, to a certain extent, it can also reduce the thickness of the encapsulation of the photosensitive chip 20, and is not restricted by the brittleness of the metal wire, resulting in the inability to set other functional components around the area where the metal wire is located as described in the related art, thus facilitating the miniaturization development of the optoelectronic packaging structure 100.
[0079] At the same time, compared with the flip-chip packaging technology, in this application, a conductive layer 50 is formed on the inner wall of the channel 40 to obtain a hollow conductive channel 6. Therefore, it is not limited to using chips with symmetrically distributed solder joints, and is not restricted by the size of the metal balls, resulting in too high requirements for the flatness of the substrate 10 as described in the related art.
[0080] In some embodiments, the encapsulant 30 and the photosensitive chip 20 are disposed on the same surface of the substrate 10, and the encapsulant 30 at least adheres to the side wall of the photosensitive chip 20. The setting of the encapsulant 30 can improve the stability of the encapsulated photosensitive chip 20. One of the substrate 10 or the encapsulant 30 is provided with channels 40, and at least part of the channels 40 extend along the thickness direction of the optoelectronic packaging structure 100, which is convenient for opening holes, and is also beneficial to setting the conductive layer 50 in the channels 40. For example, in some embodiments, by spraying conductive ink and other methods, conductive ink is coated in the channels 40, and the conductive ink is cured to form the conductive layer 50.
[0081] In this application, taking the photosensitive chips 20 are respectively disposed on the first surface 11 and the second surface 12 as an example, the optoelectronic packaging structure 100 is specifically described through the following embodiments.
[0082] Embodiment 1
[0083] Refer to Figure 2, in this embodiment, the photosensitive chip 20 is disposed on the first surface 11. The encapsulant 30 is at least attached to the side wall of the photosensitive chip 20. The channel 40 is located on the encapsulant 30. The inner wall of the channel 40 is provided with a conductive layer 50 to form a hollow conductive channel 6, and the hollow conductive channel 6 is electrically connected to the substrate 10 and the non-photosensitive area 22. Specifically, the conductive layer 50 in the hollow conductive channel 6 is electrically connected to the pads (not shown in the figure) of the substrate 10 and the non-photosensitive area 22 respectively.
[0084] In some embodiments, the channel 40 includes a first channel 41, a second channel 42, and a third channel 43, and the second channel 42 is connected between the first channel 41 and the third channel 43. Both the first channel 41 and the third channel 43 extend in the encapsulant 30 along the thickness direction of the photosensitive chip 20. One end of the first channel 41 communicates with the substrate 10, and one end of the third channel 43 communicates with the non-photosensitive area 22. The encapsulant 30 serves as a carrier for the conductive layer 50, and the shape and position of the channel 40 can be adjusted according to actual needs.
[0085] Refer to Figure 2 , in some embodiments, both the first channel 41 and the third channel 43 are through holes. The second channel 42 extends in or on the encapsulant 30 along a direction perpendicular to the thickness direction of the photosensitive chip 20. The first channel 41 communicates with the substrate 10, and is used to expose the pad (not shown in the figure) on the substrate 10 to the first channel 41, so as to realize the electrical connection between the conductive layer 50 in the first channel 41 and the pad. Similarly, the third channel 43 communicates with the non-photosensitive area 22, and exposes the pad (not shown in the figure) on the non-photosensitive area 22 to the third channel 43, so as to realize the electrical connection between the conductive layer 50 in the third channel 43 and the pad. In this embodiment, the pad connection of the non-photosensitive area 22 is located on the surface of the photosensitive chip 20 facing away from the substrate 10.
[0086] Refer to Figure 2 , in some embodiments, the encapsulant 30 includes a first encapsulation block 31 and a second encapsulation block 32 disposed on the first encapsulation block 31. The first encapsulation block 31 is attached to the side wall of the photosensitive chip 20, and the second encapsulation block 32 covers the first encapsulation block 31 and at least part of the non-photosensitive area 22. The first channel 41 penetrates through the first encapsulation block 31 and extends to the second encapsulation block 32. The third channel 43 penetrates through the second encapsulation block 32, and the second channel 42 is exposed on the second encapsulation block 32. The first encapsulation block 31 and the second encapsulation block 32 are bonded and fixed. In some embodiments, the second channel 42 is located on the top surface of the second encapsulation block 32 or is formed by an inward recess on the top surface of the second encapsulation block 32. When the second channel 42 is located on the surface of the second encapsulation block 32 (not shown in the figure), part of the conductive layer 50 is laid flat on the second encapsulation block 32; when the second channel 42 is formed by an inward recess in the second encapsulation block 32 to form a groove structure, the opening of the groove faces away from the first encapsulation block 31 (see Figure 2), the groove structure is conducive to spraying conductive ink into the second channel 42 in the subsequent process, and the conductive ink is cured to form a conductive layer 50. Moreover, it is also conducive to spraying the entire channel 40 horizontally in sequence during the spraying process of the conductive ink.
[0087] The second encapsulation block 32 is used as a carrier for the paths of the second channel 42 and the third channel 43. Since the encapsulation body 30 includes the first encapsulation block 31 and the second encapsulation block 32, during the encapsulation process, the second encapsulation block 32 can be first covered on the non-photosensitive area 22, and then the first encapsulation block 31 can be attached to the side wall of the photosensitive chip 20, which is convenient for assembly and can also improve the yield of the optoelectronic packaging structure 100. In some other embodiments, the integrated encapsulation body 30 can also be formed by injection molding on the photosensitive chip 20 through a suitable mold.
[0088] In some embodiments, in order to prevent the conductive layer 50 exposed on the second encapsulation block 32 from being electrically connected to other functional components and causing a short circuit, a protective film 60 is further provided on the second encapsulation block 32, and the protective film 60 covers the second channel 42. In some embodiments, the protective film 60 is laid on the entire surface of the second encapsulation block 32. The protective film 60 can be made of UV glue.
[0089] The surface of the optoelectronic packaging structure 100 provided by the present application is flat, which is conducive to installing the lens assembly 2 on the surface of the optoelectronic packaging structure 100. The difference in length between the optoelectronic packaging structure 100 provided by the present application and the corresponding length of the photosensitive chip 20 is less than 500 μm, and the difference in width between the optoelectronic packaging structure 100 and the corresponding width of the photosensitive chip 20 is also less than 500 μm. At the same time, the area of the optoelectronic packaging structure 100 is smaller than that of the packages prepared by the wire bonding packaging technology and the flip chip packaging technology, and the thickness is also smaller than that of the package obtained by the flip chip packaging technology.
[0090] In some embodiments, the conductive layer 50 is conductive ink. The conductive ink can be selected from non-granular conductive ink or conductive silver paste, and the conductive ink contains at least one element of silver, platinum, gold, copper, nickel, and aluminum.
[0091] In some embodiments, the optoelectronic packaging structure 100 further includes components 70, and the components 70 include at least one of passive components and active components. Among them, the passive components include resistors, capacitors, etc., and the active components include transistors, integrated circuits, or picture tubes, etc.
[0092] Refer to Figure 2 , in some embodiments, the components 70 are arranged on the second surface 12 of the substrate 10.
[0093] Refer to Figure 3, in some other embodiments, the component 70 is disposed on the first surface 11 of the substrate 10 and sealed within the plastic package 30. The component 70 is sealed between the photosensitive chip 20 and the substrate 10. The first plastic package block 31 is disposed between the photosensitive chip 20 and the substrate 10, and extends outside the photosensitive chip 20 and wraps the side wall of the photosensitive chip 20, thereby improving the stability of the installation of the photosensitive chip 20 and the component 70.
[0094] Refer to Figure 4 , in some other embodiments, the component 70 is disposed on one side of the photosensitive chip 20 and sealed within the first plastic package block 31.
[0095] Refer to Figure 5 , in some other embodiments, the component 70 is located on one side of the photosensitive chip 20 and on the plastic package 30, and the component 70 is not sealed by the plastic package 30.
[0096] In some embodiments, the thickness of the conductive layer 50 is greater than or equal to 500 nm, and the conductive ink is sprayed into the channel 40 and cured to obtain the thickness. In some embodiments, the thickness of the conductive layer 50 can be set according to actual requirements, so as to adjust the impedance of each conductive layer 50.
[0097] An embodiment of the present application further provides a method for preparing an optoelectronic packaging structure 100, including the following steps:
[0098] S1. Refer to Figure 6 , provide a sheet 1000, the sheet 1000 includes a plurality of substrates 10 arranged in an array, a to-be-cut area 300 is formed between adjacent substrates 10, and the substrate module 5 includes a substrate 10 and a plastic package 30 (see Figure 10 ).
[0099] S2. Refer to Figure 6 , fabricate each substrate 10 into a packaging unit 200.
[0100] Fabricating the packaging unit 200 includes the following steps:
[0101] (1) Refer to Figure 7 , provide a photosensitive chip 20 and a second plastic package block 32, the photosensitive chip 20 includes a photosensitive area 21 and a non-photosensitive area 22 connected to the photosensitive area 21, and paste the second plastic package block 32 on the non-photosensitive area 22 of the photosensitive chip 20.
[0102] (2) Refer to Figure 8 and Figure 9, the photosensitive chip 20 with the second encapsulation block 32 is pressed and fixed on the corresponding substrate 10. A preform 90 for encapsulation is also provided on the substrate 10, and the preform 90 for encapsulation adheres to at least the side wall of the photosensitive chip 20. The photosensitive chip 20 can be bonded to the substrate 10 through an insulating adhesive layer. The preform 90 for encapsulation is coated on the substrate 10 and pressed to cover and arrange on the side wall of the photosensitive chip 20. The preform 90 for encapsulation is at least located between the second encapsulation block 32 and the substrate 10.
[0103] In some embodiments, the component 70 is pasted on the surface of the substrate 10 facing away from the photosensitive chip 20. Alternatively, the component 70 is sealed within the preform 90 for encapsulation and is located between the photosensitive chip 20 and the substrate 10, then the preform 90 for encapsulation is arranged between the photosensitive chip 20 and the substrate 10 and extends to the side wall of the photosensitive chip 20. Alternatively, the component 70 is sealed within the preform 90 for encapsulation and is located on one side of the photosensitive chip 20. Alternatively, the component 70 is located on one side of the photosensitive chip 20 and on the encapsulation body 30, and the component 70 is not sealed by the encapsulation body 30.
[0104] The position of the component 70 can be set according to actual requirements.
[0105] In some embodiments, the material of the first encapsulation block 31 is at least one of epoxy resin or phenolic resin, and the material of the second encapsulation block 32 is at least one of polyimide glue, UV glue, black glue or silicone glue.
[0106] (3) Cure the preform 90 for encapsulation to obtain the first encapsulation block 31, and the first encapsulation block 31 and the second encapsulation block 32 form the encapsulation body 30.
[0107] The preform 90 for encapsulation is cured by heating and pressing to obtain the first encapsulation block 31 with stable structure and strength, so that the photosensitive chip 20 is sealed within the first encapsulation block 31. The first encapsulation block 31 is located between the second encapsulation block 32 and the substrate 10, and after the preform 90 for encapsulation is heated and cured, the first encapsulation block 31 is adhered to the second encapsulation block 32.
[0108] S3. Refer to Figure 10 , a channel 40 is opened on the encapsulation body 30 in the encapsulation unit 200, and both ends of the channel 40 extend to the substrate 10 and the non-photosensitive area 22 respectively.
[0109] The channel 40 includes a first channel 41, a second channel 42 and a third channel 43, and the second channel 42 is connected between the first channel 41 and the third channel 43. Both the first channel 41 and the third channel 43 extend along the thickness direction of the photosensitive chip 20, one end of the first channel 41 communicates with the substrate 10, and one end of the third channel 43 communicates with the non-photosensitive area 22. The second channel 42 is exposed on the second encapsulation block 32.
[0110] In some embodiments, the first channel 41 and the third channel 43 can be obtained by drilling along the thickness direction of the encapsulation unit 200, such as laser drilling. In some embodiments, on the second encapsulation block 32, the second channel 42 is obtained by drilling along the horizontal direction perpendicular to the thickness direction of the encapsulation unit 200 to obtain a groove structure with an opening facing away from the substrate 10. In other embodiments, the second channel 42 is located on the top surface of the second encapsulation block 32, and no drilling process is performed on the second encapsulation block 32.
[0111] S4. Refer to Figure 11 , a conductive material is sprayed in the channel 40, and the conductive material is cured to form a conductive layer 50 on the inner wall of the channel 40 to obtain a hollow conductive channel 6, and the conductive layer 50 in the hollow conductive channel 6 is electrically connected to the non-photosensitive area 22 and the substrate 10.
[0112] The first channel 41, the second channel 42, and the third channel 43 are sequentially sprayed using a nozzle so that the conductive material is coated in the channel 40. The conductive material includes conductive ink or conductive silver paste. In this application, conductive ink is used for spraying, and the inner diameter of the channel 40 can be set to be less than 50 μm. When using other conductive materials, such as conductive silver paste, the required inner diameter of the channel 40 needs to be greater than 250 μm to enable the conductive silver paste to be formed in the channel 40. By using conductive ink in this application, it can be applicable to channels 40 with small apertures, which is beneficial to the miniaturization development of the optoelectronic packaging structure 100.
[0113] When the conductive material is conductive ink, curing the conductive ink includes a first curing stage and a second curing stage that are performed sequentially.
[0114] The first curing stage includes: after spraying the conductive ink in the channel 40, irradiating the conductive ink with ultraviolet light, and the conductive ink is pre-cured. In this stage, through ultraviolet irradiation, the conductive ink is quickly pre-cured to prevent the flow of the conductive ink. The ultraviolet irradiation time is several seconds, specifically 1 - 5 s.
[0115] The second curing stage includes: baking the pre-cured conductive ink to obtain the conductive layer 50, thereby forming the hollow conductive channel 6. After the conductive ink undergoes the first curing stage, the conductive ink is pre-cured on the inner wall of the channel 40, and then baked at 60°C - 100°C for 0.5 h - 3 h, and the conductive ink is completely cured on the inner wall of the channel 40.
[0116] In other embodiments, the conductive layer 50 can also be formed by electroplating on the inner wall of the channel 40.
[0117] S5. Refer to Figure 2 , a protective film 60 is coated on the surface of the second encapsulation block 32 to obtain the optoelectronic packaging structure 100.
[0118] The protective film 60 is provided to block the second channel 42 and prevent the conductive layer 50 in the second channel 42 from contacting other charged components in the optoelectronic packaging structure 100, thus avoiding short circuits.
[0119] After the protective film 60 is formed on the packaging unit 200, the sheet 1000 is cut along the area to be cut 300 to obtain a plurality of optoelectronic packaging structures 100.
[0120] In the present application, by opening a channel 40 in the substrate module 5 and disposing a conductive layer 50 in the channel 40, a hollow conductive channel 6 is formed. The hollow conductive channel 6 can realize the electrical connection between the substrate 10 and the non-photosensitive area 22, eliminating the need for wire setting and not being restricted by the shape of the wire bonding tool. In the present application, the setting of the conductive layer 50 can adjust the shape of the hollow conductive channel 6 according to requirements and is not limited by the wire bonding tool. The lateral path between the substrate 10 and the non-photosensitive area 22 can be reduced. Since the shape of the channel 40 can also be adjusted according to the installation positions of other components in the present application, to a certain extent, the thickness of the packaging of the photosensitive chip 20 is reduced, and it is not restricted by the brittleness of the wire so that other functional components cannot be arranged around the area where the wire is located, which is conducive to the miniaturization development of the optoelectronic packaging structure 100.
[0121] Embodiment 2
[0122] The difference between Embodiment 2 and Embodiment 1 is that, referring to Figure 12 , an opening 13 is formed on the substrate 10. The photosensitive chip 20 is flip-chip mounted on the second surface 12 and the photosensitive area 21 is exposed to the opening 13, and the non-photosensitive area 22 is attached to the second surface 12. The channel 40 is located in the substrate 10 and penetrates the substrate 10. One end of the channel 40 extends to the non-photosensitive area 22, and a conductive layer 50 is provided on the inner wall of the channel 40 to obtain a hollow conductive channel 6, and the hollow conductive channel 6 is electrically connected to the substrate 10 and the non-photosensitive area 22.
[0123] In this embodiment, the channel 40 extends along the thickness direction of the photosensitive chip 20. The pads on the non-photosensitive area 22 are exposed in the channel 40, and both ends of the conductive layer 50 in the hollow conductive channel 6 are electrically connected to the pads on the non-photosensitive area 22 and the pads on the substrate 10 respectively.
[0124] In this embodiment, the material of the encapsulant 30 is the same as that of the first encapsulation block 31 in the foregoing Embodiment 1. The encapsulant 30 is disposed on the side wall of the photosensitive chip 20. An adhesive layer 80 is also provided between the photosensitive chip 20 and the second surface 12, and the encapsulant 30 is also bonded to the second surface 12 through the adhesive layer 80.
[0125] In this embodiment, the difference in the preparation method of the optoelectronic packaging structure 100 from that of the first embodiment is as follows: when manufacturing the packaging unit 200, the second plastic encapsulation block 32 in step (1) of the aforementioned first embodiment is omitted, and the photosensitive chip 20 is disposed on the second surface 12 of the substrate 10; in step S2, the channel 40 is disposed on the substrate 10. Specifically, a channel 40 is formed on the substrate 10, and a conductive material (such as conductive ink) is sprayed in the channel 40. The conductive material is cured on the inner wall of the channel 40 to form a conductive layer 50, thereby obtaining a hollow conductive channel 6. The hollow conductive channel 6 is electrically connected to the non-photosensitive area 22 and the substrate 10.
[0126] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application and not to limit them. Although the present application has been described in detail with reference to the embodiments, those of ordinary skill in the art should understand that the technical solutions of the present application can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present application.
Claims
1. An optoelectronic packaging structure, characterized in that, Comprising: A substrate module, including a substrate, and a plurality of channels are formed in the substrate module; A photosensitive chip, disposed on the substrate, the photosensitive chip includes a photosensitive area and a non-photosensitive area connected to the photosensitive area; Wherein, both ends of the channel extend to the substrate and the non-photosensitive area respectively, and a conductive layer is provided on the inner wall of the channel to form a hollow conductive channel, and the hollow conductive channel is electrically connected to the substrate and the non-photosensitive area.
2. The optoelectronic packaging structure according to claim 1, wherein The substrate includes a first surface and a second surface arranged oppositely, the substrate module further includes a plastic package, the plastic package and the photosensitive chip are disposed on the same surface of the substrate, the plastic package at least adheres to the side wall of the photosensitive chip, and the channel is disposed in the substrate or the plastic package.
3. The optoelectronic packaging structure according to claim 2, wherein The photosensitive chip is disposed on the first surface, the channel is disposed on the plastic package, the channel includes a first channel, a second channel and a third channel, the second channel is connected between the first channel and the third channel, both the first channel and the third channel extend along the thickness direction of the photosensitive chip, one end of the first channel communicates with the substrate, and one end of the third channel communicates with the non-photosensitive area.
4. The optoelectronic packaging structure according to claim 3, wherein, The plastic package includes a first plastic package block and a second plastic package block disposed on the first plastic package block, the first plastic package block adheres to the side wall of the photosensitive chip, the second plastic package block at least covers part of the non-photosensitive area, the first channel penetrates through the first plastic package block and extends to the second plastic package block, the third channel penetrates through the second plastic package block, and the second channel is exposed on the second plastic package block.
5. The optoelectronic packaging structure according to claim 4, wherein A protective film is further provided on the surface of the second plastic package block, and the protective film covers the second channel.
6. The optoelectronic packaging structure according to claim 1, characterized in that, The conductive material of the conductive layer includes conductive ink or conductive silver paste.
7. The optoelectronic packaging structure according to claim 2, characterized in that, An opening is provided on the substrate, the photosensitive chip is disposed on the second surface and the photosensitive area is exposed to the opening, the non-photosensitive area adheres to the second surface, the channel penetrates through the substrate, one end of the channel extends to the non-photosensitive area, and the hollow conductive channel is electrically connected to the non-photosensitive area.
8. The optoelectronic packaging structure according to any one of claims 1 to 7, characterized in that The optoelectronic packaging structure further includes components, and the components are sealed in the plastic package, or disposed outside the plastic package, or disposed on the substrate.
9. The optoelectronic packaging structure according to any one of claims 1 to 7, characterized in that, The thickness of the conductive layer is greater than or equal to 500 nm.
10. A method for preparing an optoelectronic packaging structure, characterized in that, Comprising: Disposing a photosensitive chip on the substrate of a substrate module; Forming a plurality of channels in the substrate module, with both ends of the channels extending to the substrate and the non-photosensitive area of the photosensitive chip respectively; Providing a conductive layer on the inner wall of the channel to form a hollow conductive channel, and the hollow conductive channel is electrically connected to the substrate and the non-photosensitive area, thereby obtaining an optoelectronic packaging structure.
11. The method for preparing the optoelectronic packaging structure according to claim 10, wherein, The substrate includes a first surface and a second surface arranged oppositely, the substrate module further includes a plastic package, the photosensitive chip and the plastic package are disposed on the same surface of the substrate, and the plastic package at least adheres to the side wall of the photosensitive chip.
12. The method for manufacturing the optoelectronic packaging structure according to claim 11, wherein, The channel is formed in the plastic package, and the step of disposing the photosensitive chip on the substrate includes: The second encapsulation block is disposed on the non - photosensitive area of the photosensitive chip; The photosensitive chip with the second encapsulation block is fixed on the substrate, and a pre - encapsulation body is further provided on the substrate, and the pre - encapsulation body at least adheres to the side wall of the photosensitive chip; The pre - encapsulation body is cured to obtain a first encapsulation block, and the first encapsulation block and the second encapsulation block form the encapsulation body.
13. The method for preparing the optoelectronic packaging structure according to claim 12, wherein, When the photosensitive chip is fixed on the substrate, the pre - encapsulation body is disposed between the photosensitive chip and the substrate and extends to the side wall of the photosensitive chip.
14. The manufacturing method of the optoelectronic packaging structure according to claim 11, characterized in that, The channel is opened on the substrate, and the step of disposing the photosensitive chip on the substrate includes: The photosensitive chip is fixed on the second surface. The photosensitive chip further includes a photosensitive area connected to the non - photosensitive area. An opening is formed on the substrate, and the photosensitive area is exposed to the opening. The non - photosensitive area adheres to the second surface, and a pre - encapsulation body is further provided on the second surface, and the pre - encapsulation body at least adheres to the side wall of the photosensitive chip; The pre - encapsulation body is cured to obtain the encapsulation body.
15. The method for preparing the optoelectronic packaging structure according to claim 10, characterized in that, Setting the conductive layer on the inner wall of the channel includes: A conductive material is disposed in the channel, and the conductive material is cured to form the conductive layer on the inner wall of the channel.
16. The manufacturing method of the optoelectronic packaging structure according to claim 15, characterized in that, The conductive material includes conductive ink or conductive silver paste.
17. The method for manufacturing the optoelectronic packaging structure according to claim 16, characterized in that, Curing the conductive ink includes a first curing stage and a second curing stage performed in sequence; The first curing stage includes: after spraying the conductive ink in the channel, irradiating the conductive ink with ultraviolet light to pre - cure the conductive ink; The second curing stage includes: baking the pre - cured conductive ink to obtain the conductive layer.
18. The method for preparing the optoelectronic packaging structure according to claim 10, wherein, Before the photosensitive chip is disposed on the substrate to obtain an encapsulation unit, the preparation method further includes: Providing a plate material, the plate material includes a plurality of substrates arranged in an array, and a cutting area to be cut is formed between adjacent substrates; Each substrate is made into the encapsulation unit; After the conductive layer is disposed in the encapsulation unit to form the hollow conductive channel, the plate material is cut along the cutting area to be cut, so as to obtain a plurality of the optoelectronic packaging structures.
19. An imaging module, comprising a lens, characterized in that, The camera module further includes the optoelectronic packaging structure according to any one of claims 1 to 9, and the lens is disposed on the substrate module in the optoelectronic packaging structure.