Semiconductor optical amplifier structure based on electron barrier layer optimization

Abstract

The invention relates to the technical field of photoelectrons, in particular to a semiconductor optical amplifier structure based on electron barrier layer optimization. The height of a conduction band barrier is adjusted by adjusting the size of an aluminum component, so that the blocking effect of an electron barrier is enhanced, the transverse diffusion and tunneling loss of carriers are reduced, the carrier recombination efficiency of a quantum well region is improved, collaborative optimization of gain characteristics, output power and electro-optical conversion efficiency can be achieved under the specific aluminum component, and the performance of the device is improved. The method breaks through the limitation of a traditional experiment trial-and-error method, reduces the experiment cost, provides theoretical guidance for energy band engineering optimization of the semiconductor optical amplifier, and is suitable for development and design of high-performance devices in an optical communication system and photon integration.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and more specifically, to a semiconductor optical amplifier structure based on electron blocking layer optimization. Background Art

[0002] With the rapid development of modern optical communication networks, optical signal amplification technology has become a key technology for efficiently achieving long-distance, high-capacity optical transmission. Semiconductor optical amplifiers, due to their low cost, small size, light weight, low power consumption, and ease of integration, are widely used in wavelength division multiplexing systems, fiber-optic sensing, and optical switching equipment.

[0003] In modern optical communication systems, the performance of semiconductor optical amplifiers (SOAs) is directly related to signal transmission quality and system reliability. Despite their advantages such as small size and fast response, conventional SOAs face challenges such as insufficient saturated output power and low electro-optical conversion efficiency compared to established erbium-doped fiber amplifiers (EDFAs). These performance limitations not only hinder the widespread adoption of SOA in high-speed optical communication systems but also restrict its potential in other high-performance applications. Summary of the Invention

[0004] The purpose of the present invention is to overcome the shortcomings of the prior art semiconductor optical amplifiers in terms of low output power and electro-optical conversion efficiency, and to provide a semiconductor optical amplifier structure based on electron blocking layer optimization, which can effectively improve the saturated output power and electro-optical conversion efficiency of the semiconductor optical amplifier.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0006] Provided is a semiconductor optical amplifier structure based on electron blocking layer optimization. The epitaxial structure of the semiconductor optical amplifier comprises, from bottom to top, an InP substrate, an N-InP layer, an N-InGaAlAs confinement layer, an InGaAlAs lower waveguide layer, an InGaAlAs multi-quantum well active layer, an InGaAlAs upper waveguide layer, a P-InAlAs electron blocking layer, a P-InGaAsP corrosion blocking layer, a P-InP cladding layer, a P-InGaAsP buffer layer, and a P-InGaAs contact layer.

[0007] The present invention provides a semiconductor optical amplifier structure based on electron blocking layer optimization. The adjustment range of the Al composition value in the P-InAlAs electron blocking layer is determined based on the matching relationship between the lattice parameters and band gap values ​​of the upper and lower layers of the P-InAlAs electron blocking layer in the epitaxial structure. By adjusting the Al composition value in the P-InAlAs electron blocking layer, the electron barrier blocking effect is enhanced, carrier loss is reduced, thereby improving the carrier recombination efficiency in the quantum well region, and enhancing the saturated output power and electro-optical conversion efficiency of the semiconductor optical amplifier.

[0008] Furthermore, the semiconductor optical amplifier has a PIN structure in the vertical direction.

[0009] Furthermore, by adjusting the Al composition in the P-InAlAs electron blocking layer, the semiconductor optical amplifier generates a protruding peak on the conduction band, thereby increasing the effective barrier height of electrons and enhancing the blocking effect on electrons.

[0010] Furthermore, the corresponding aluminum component value X in the P-InAlAs electron blocking layer is: 0.370≤X≤0.478.

[0011] Furthermore, the semiconductor optical amplifier operates in the communication band of 1230nm to 1310nm.

[0012] Furthermore, the semiconductor optical amplifier is a ridge waveguide structure, including a straight waveguide, an inclined waveguide, a tapered waveguide or a slab-coupled waveguide.

[0013] The present invention also provides a method for optimizing the electron blocking layer of the semiconductor optical amplifier structure described above, comprising the following steps:

[0014] S1. Construct a semiconductor amplifier model in simulation software based on the semiconductor amplifier's epitaxial structure parameters, device structure parameters, and operating conditions.

[0015] S2. Determine the adjustment range of the Al composition in the P-InAlAs electron-blocking layer of a semiconductor optical amplifier through theoretical analysis and calculation;

[0016] S3. Use simulation software to simulate and verify the semiconductor optical amplifier, and determine the optimal Al component parameters based on the simulation results so that the saturated output power, small signal gain, and electro-optical conversion efficiency all reach the optimal state.

[0017] The present invention provides a method for optimizing the electron blocking layer of a semiconductor optical amplifier structure. Through simulation modeling, the Al composition value in the semiconductor optical amplifier's P-InAlAs electron blocking layer is adjusted within the simulation model. During the adjustment process, the optimal Al composition value is determined when the saturated output power, small-signal gain, and electro-optical conversion efficiency all reach their optimal states. This method can adapt to semiconductor optical amplifiers of varying structures. For semiconductor optical amplifiers with varying layer thicknesses and doping concentrations, the method can be used to find the optimal Al composition value, achieving a synergistic optimization effect on gain characteristics, output power, and electro-optical conversion efficiency. This method overcomes the limitations of traditional trial-and-error experimental methods, reduces experimental costs, and provides theoretical guidance for the optimization of semiconductor optical amplifier bandgap engineering. The method is suitable for the development and design of high-performance devices in optical communication systems and photonic integration.

[0018] Furthermore, the device structural parameters include waveguide shape, cavity length, and ridge width; the operating parameters include bias current, input optical power, and end facet reflectivity. The epitaxial structure parameters include the semiconductor optical amplifier epitaxial structure, which, from bottom to top, includes an InP substrate, an N-InP layer, an N-InGaAlAs confinement layer, an InGaAlAs lower waveguide layer, an InGaAlAs multi-quantum well active layer, an InGaAlAs upper waveguide layer, a P-InAlAs electron blocking layer, a P-InGaAsP corrosion blocking layer, a P-InP cladding layer, a P-InGaAsP buffer layer, and a P-InGaAs contact layer.

[0019] Furthermore, in step S2, the adjustment range of the Al composition value in the P-InAlAs electron blocking layer is determined according to the matching relationship between the lattice parameters and band gap values ​​of the upper and lower layers of the P-InAlAs electron blocking layer in the epitaxial structure.

[0020] Furthermore, the adjustment range of the Al composition value X in the P-InAlAs electron blocking layer is: 0.370≤X≤0.478.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] The present invention provides a semiconductor optical amplifier structure based on electron blocking layer optimization and an electron blocking layer optimization method thereof. By adjusting the size of the aluminum component to adjust the conduction band barrier height, the blocking effect of the electron barrier is enhanced, the lateral diffusion and tunneling losses of carriers are reduced, and the carrier recombination efficiency in the quantum well region is improved. Under a specific aluminum component, the structure can achieve coordinated optimization of gain characteristics, output power, and electro-optical conversion efficiency, breaking through the limitations of traditional experimental trial and error methods, reducing experimental costs, and providing theoretical guidance for the band engineering optimization of semiconductor optical amplifiers. The structure is suitable for the development and design of high-performance devices in optical communication systems and photonic integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Schematic diagram of the overall epitaxial structure of the semiconductor optical amplifier in Example 1;

[0024] Figure 2 This is a schematic diagram of symmetrical modeling of the semiconductor optical amplifier in Example 2;

[0025] Figure 3 This is the simulation result of the electron concentration distribution at the input end of the semiconductor optical amplifier in Example 2;

[0026] Figure 4 This is the simulation result of the hole concentration distribution at the input end of the semiconductor optical amplifier in Example 2;

[0027] Figure 5The simulation result of the electron concentration distribution at the output end of the semiconductor optical amplifier in Example 2;

[0028] Figure 6 The simulation result of the hole concentration distribution at the output end of the semiconductor optical amplifier in Example 2;

[0029] Figure 7 The energy band diagram simulation result of the semiconductor optical amplifier in Example 2;

[0030] Figure 8 The gain spectrum simulation result of the semiconductor optical amplifier in Example 2;

[0031] Figure 9 The stimulated recombination rate simulation result of the input end of the semiconductor optical amplifier in Example 2;

[0032] Figure 10 The stimulated recombination rate simulation result of the output end of the semiconductor optical amplifier in Example 2;

[0033] Figure 11 The simulation result of the electron concentration distribution at the input end of the semiconductor optical amplifier in Example 3;

[0034] Figure 12 The simulation result of the hole concentration distribution at the input end of the semiconductor optical amplifier in Example 3;

[0035] Figure 13 The simulation result of the electron concentration distribution at the output end of the semiconductor optical amplifier in Example 3;

[0036] Figure 14 The simulation result of the hole concentration distribution at the output end of the semiconductor optical amplifier in Example 3;

[0037] Figure 15 The energy band diagram simulation result of the semiconductor optical amplifier in Example 3;

[0038] Figure 16 The gain spectrum simulation result of the semiconductor optical amplifier in Example 3;

[0039] Figure 17 The stimulated recombination rate simulation result of the input end of the semiconductor optical amplifier in Example 3;

[0040] Figure 18 The stimulated recombination rate simulation result of the output end of the semiconductor optical amplifier in Example 3;

[0041] Figure 19 Comparison of IV characteristic curve simulation results before and after optimization of the Al component size in the electron blocking layer of the semiconductor optical amplifier in Example 4;

[0042] Figure 20Comparison of simulation results of gain-input optical power curve and output optical power-input optical power before and after optimization of Al component size in the electron blocking layer of the semiconductor optical amplifier in Example 4;

[0043] Figure 21 The figure shows the comparison of simulation results of the electro-optical conversion efficiency-input optical power curve before and after the optimization of the Al component size in the electron blocking layer of the semiconductor optical amplifier in Example 4.

[0044] In the accompanying drawings: 1. InP substrate; 2. N-InP layer; 3. N-InGaAlAs confinement layer; 4. InGaAlAs lower waveguide layer; 5. InGaAlAs multi-quantum well active layer; 6. InGaAlAs upper waveguide layer; 7. P-InAlAs electron blocking layer; 8. P-InGaAsP corrosion blocking layer; 9. P-InP cladding layer; 10. P-InGaAsP buffer layer; 11. P-InGaAs contact layer. DETAILED DESCRIPTION

[0045] The present invention will be further described below with reference to specific embodiments. The accompanying drawings are for illustrative purposes only and are schematic, not actual, representations. They should not be construed as limiting the present invention. To better illustrate the embodiments of the present invention, some components in the drawings may be omitted, enlarged, or reduced in size, and do not represent the actual dimensions of the products. It is understandable to those skilled in the art that some well-known structures and their descriptions may be omitted from the drawings.

[0046] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "up", "down", "left", "right", etc. indicate directions or positional relationships, they are based on the directions or positional relationships shown in the drawings. This is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0047] Example 1

[0048] This embodiment is the first embodiment of a semiconductor optical amplifier structure based on electron blocking layer optimization. Figure 1As shown, the semiconductor optical amplifier has a PIN structure in the vertical direction. The epitaxial structure of the semiconductor optical amplifier includes, from bottom to top, an InP substrate 1, an N-InP layer 2, an N-InGaAlAs confinement layer 3, an InGaAlAs lower waveguide layer 4, an InGaAlAs multi-quantum well active layer 5, an InGaAlAs upper waveguide layer 6, a P-InAlAs electron blocking layer 7, a P-InGaAsP corrosion blocking layer 8, a P-InP cladding layer 9, a P-InGaAsP buffer layer 10 and a P-InGaAs contact layer 11.

[0049] In this embodiment, by adjusting the Al composition in the P-InAlAs electron blocking layer 7, a protruding peak is generated in the conduction band of the semiconductor optical amplifier to increase the effective barrier height of electrons and enhance the blocking effect on electrons.

[0050] In this embodiment, the corresponding aluminum composition value X in the P-InAlAs electron blocking layer 7 is: 0.370≤X≤0.478.

[0051] In this embodiment, the semiconductor optical amplifier operates in the communication band of 1230 nm to 1310 nm.

[0052] In this embodiment, the semiconductor optical amplifier is a ridge waveguide structure, including a straight waveguide, a tilted waveguide, a tapered waveguide or a slab-coupled waveguide, such as Figure 2 shown.

[0053] This embodiment provides a semiconductor optical amplifier structure based on electron blocking layer optimization. The adjustment range of the Al composition value in the P-InAlAs electron blocking layer 7 is determined based on the matching relationship between the lattice parameters and band gap values ​​of the upper and lower layers of the P-InAlAs electron blocking layer 7 in the epitaxial structure. By adjusting the Al composition value in the P-InAlAs electron blocking layer 7, the electron barrier blocking effect is enhanced, carrier loss is reduced, and the carrier recombination efficiency in the quantum well region is improved, thereby improving the saturated output power and electro-optical conversion efficiency of the semiconductor optical amplifier.

[0054] Example 2

[0055] This embodiment is a first embodiment of a method for optimizing an electron blocking layer of a semiconductor optical amplifier structure. The method for optimizing an electron blocking layer of a semiconductor optical amplifier structure includes the following steps:

[0056] S1. Construct a semiconductor amplifier model in simulation software based on the semiconductor amplifier's epitaxial structure parameters, device structure parameters, and operating conditions. The device structure parameters include waveguide shape, cavity length, and ridge width; the operating parameters include bias current, input optical power, and end facet reflectivity. The epitaxial structure parameters include: The semiconductor optical amplifier epitaxial structure comprises, from bottom to top, an InP substrate 1, an N-InP layer 2, an N-InGaAlAs confinement layer 3, an InGaAlAs lower waveguide layer 4, an InGaAlAs multi-quantum well active layer 5, an InGaAlAs upper waveguide layer 6, a P-InAlAs electron blocking layer 7, a P-InGaAsP corrosion blocking layer 8, a P-InP cladding layer 9, a P-InGaAsP buffer layer 10, and a P-InGaAs contact layer 11. In this embodiment, the epitaxial structure provided in Example 1 is used.

[0057] S2. Determine the adjustment range of the Al composition in the P-InAlAs electron blocking layer 7 of the semiconductor optical amplifier through theoretical analysis and calculation. The adjustment range of the Al composition value in the P-InAlAs electron blocking layer 7 is determined based on the matching relationship between the lattice parameters and band gap values ​​of the upper and lower layers of the P-InAlAs electron blocking layer 7 in the epitaxial structure. The adjustment range of the Al composition value X in the P-InAlAs electron blocking layer 7 is: 0.370≤X≤0.478.

[0058] S3. Use simulation software to simulate and verify the semiconductor optical amplifier, and determine the optimal Al component parameters based on the simulation results so that the saturated output power, small signal gain, and electro-optical conversion efficiency all reach the optimal state.

[0059] This embodiment provides a method for optimizing the electron blocking layer of a semiconductor optical amplifier structure. Through simulation modeling, the Al composition value in the semiconductor optical amplifier's P-InAlAs electron blocking layer 7 is adjusted within the simulation model. During the adjustment process, the optimal Al composition value is determined when the saturated output power, small-signal gain, and electro-optical conversion efficiency all reach their optimal states. This method can adapt to semiconductor optical amplifiers of varying structures. It can find the optimal Al composition value for semiconductor optical amplifiers with varying layer thicknesses and doping concentrations, achieving a synergistic optimization effect on gain characteristics, output power, and electro-optical conversion efficiency. This method overcomes the limitations of traditional trial-and-error methods, reduces experimental costs, and provides theoretical guidance for bandgap engineering optimization of semiconductor optical amplifiers. The method is suitable for the development and design of high-performance devices in optical communication systems and photonic integration.

[0060] In this embodiment, if Figure 2As shown, the semiconductor optical amplifier is simulated using Crosslight PICS3D software, and the Al composition value in the P-InAlAs electron blocking layer 7 is 0.47. Figure 3 is the electron concentration distribution at the input of the semiconductor optical amplifier, Figure 4 is the hole concentration distribution at the input of the semiconductor optical amplifier, Figure 5 is the electron concentration distribution at the output of the semiconductor optical amplifier, Figure 6 is the hole concentration distribution at the output of the semiconductor optical amplifier, Figure 7 is the energy band diagram of the semiconductor optical amplifier, Figure 8 is the gain spectrum of the semiconductor optical amplifier, Figure 9 is the stimulated recombination efficiency at the input of the semiconductor optical amplifier, Figure 10 is the stimulated recombination efficiency at the output of the semiconductor optical amplifier.

[0061] Example 3

[0062] This embodiment is the second embodiment of a method for optimizing the electron blocking layer of a semiconductor optical amplifier structure. This embodiment is similar to the second embodiment, except that the aluminum content in the P-InAlAs electron blocking layer 7 is gradually reduced from 0.47 to 0.37. Using simulation software, when the aluminum content is 0.37, the semiconductor optical amplifier performance reaches a relatively good balance. At this point, the electron concentration and hole concentration distribution, energy band diagram, gain spectrum, stimulated recombination rate, and other parameters at its input and output terminals exhibit good characteristics. Figure 11 is the electron concentration distribution at the input of the semiconductor optical amplifier when the Al composition is 0.37, Figure 12 is the hole concentration distribution at the input end of the semiconductor optical amplifier when the Al composition is 0.37, Figure 13 is the electron concentration distribution at the output end of the semiconductor optical amplifier when the Al composition is 0.37, Figure 14 is the hole concentration distribution at the output end of the semiconductor optical amplifier when the Al composition is 0.37, Figure 15 is the energy band diagram of the semiconductor optical amplifier when the Al composition is 0.37, Figure 16 is the gain spectrum of the semiconductor optical amplifier when the Al composition is 0.37, Figure 17 is the stimulated recombination efficiency at the input of the semiconductor optical amplifier when the Al composition is 0.37, Figure 18 is the stimulated recombination efficiency at the output end of the semiconductor optical amplifier when the Al composition is 0.37.

[0063] Example 4

[0064] This embodiment is a third embodiment of a method for optimizing an electron blocking layer of a semiconductor optical amplifier structure. This embodiment is similar to the second embodiment, except that the performance improvement effect of the semiconductor optical amplifier is intuitively demonstrated by comparing the simulation results before and after modifying the Al composition in the P-InAlAs electron blocking layer 7 of the semiconductor optical amplifier. Figure 19 As shown in FIG, when the Al composition in the P-InAlAs electron blocking layer 7 of the semiconductor optical amplifier changes from 0.47 to 0.37, the slope resistance of the semiconductor optical amplifier increases from 0.78Ω to 1.02Ω; Figure 20 As shown in FIG, when the Al composition in the P-InAlAs electron blocking layer 7 of the semiconductor optical amplifier changes from 0.47 to 0.37, the maximum optical output power of the semiconductor optical amplifier increases from 22.08 dBm to 28.58 dBm, and the small signal gain increases from 38.77 dB to 45.19 dB; Figure 21 As shown in FIG, when the Al composition in the electron blocking layer of the semiconductor optical amplifier changes from 0.47 to 0.37, the maximum electro-optical conversion efficiency of the semiconductor optical amplifier increases from 3.26% to 11.54%.

[0065] In the specific contents of the above-mentioned specific implementation methods, the various technical features can be combined in any non-contradictory manner. In order to make the description concise, not all possible combinations of the above-mentioned technical features are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0066] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. A semiconductor optical amplifier structure based on electron blocking layer optimization, characterized in that: The epitaxial structure of the semiconductor optical amplifier comprises, from bottom to top, an InP substrate (1), an N-InP layer (2), an N-InGaAlAs confinement layer (3), an InGaAlAs lower waveguide layer (4), an InGaAlAs multi-quantum well active layer (5), an InGaAlAs upper waveguide layer (6), a P-InAlAs electron blocking layer (7), a P-InGaAsP corrosion blocking layer (8), a P-InP cladding layer (9), a P-InGaAsP buffer layer (10) and a P-InGaAs contact layer (11).

2. The semiconductor optical amplifier structure based on electron blocking layer optimization according to claim 1, characterized in that: The semiconductor optical amplifier has a PIN structure in the vertical direction.

3. The semiconductor optical amplifier structure based on electron blocking layer optimization according to claim 2, characterized in that: By adjusting the Al component size in the P-InAlAs electron blocking layer (7), the semiconductor optical amplifier generates a protruding peak on the conduction band, thereby increasing the effective potential barrier height of electrons and enhancing the blocking effect on electrons.

4. The semiconductor optical amplifier structure based on electron blocking layer optimization according to claim 3, characterized in that: The corresponding aluminum component size X in the P-InAlAs electron blocking layer (7) is: 0.370≤X≤0.

478.

5. The semiconductor optical amplifier structure based on electron blocking layer optimization according to claim 3, characterized in that: The semiconductor optical amplifier operates in the communication band of 1230nm to 1310nm.

6. The semiconductor optical amplifier structure based on electron blocking layer optimization according to claim 3, characterized in that: The semiconductor optical amplifier is a ridge waveguide structure, including a straight waveguide, an inclined waveguide, a tapered waveguide or a slab-coupled waveguide.

7. A method for optimizing an electron blocking layer of a semiconductor optical amplifier structure according to any one of claims 2 to 6, characterized in that: The following steps are involved: S1. Construct a semiconductor amplifier model in simulation software based on the semiconductor optical amplifier's epitaxial structure parameters, device structure parameters, and operating conditions. S2. Determine the adjustment range of the Al component in the P-InAlAs electron blocking layer (7) of the semiconductor optical amplifier through theoretical analysis and calculation; S3. Use simulation software to simulate and verify the semiconductor optical amplifier, and determine the optimal Al component parameters based on the simulation results so that the saturated output power, small signal gain, and electro-optical conversion efficiency all reach the optimal state.

8. The method for optimizing the electron blocking layer of a semiconductor optical amplifier structure according to claim 7, wherein: In step S1, the device structural parameters include waveguide shape, cavity length, and ridge width; the operating parameters include bias current, input optical power, and end face reflectivity.

9. The method for optimizing the electron blocking layer of a semiconductor optical amplifier structure according to claim 7, wherein: In step S2, the adjustment range of the Al component value in the P-InAlAs electron blocking layer (7) is determined according to the matching relationship between the lattice parameters of the upper and lower layers and the band gap value of the P-InAlAs electron blocking layer (7) in the epitaxial structure.

10. The method for optimizing the electron blocking layer of a semiconductor optical amplifier structure according to claim 9, wherein: The adjustment range of the Al component value X in the P-InAlAs electron blocking layer (7) is: 0.370≤X≤0.478.

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