Preparation method of aluminum-silicon-copper target material with grain size less than or equal to 120 microns

Abstract

The invention relates to a preparation method of an aluminum-silicon-copper target material with the grain size smaller than or equal to 120 microns, in particular to the technical field of aluminum-silicon-copper target materials, and the preparation method comprises the steps that an aluminum-silicon-copper alloy material is sequentially subjected to first hot forging, first heat treatment, second hot forging, second heat treatment, first rolling, second rolling and third heat treatment, the grain size of the aluminum-silicon-copper target material is smaller than or equal to 120 microns; the temperature of the first heat treatment > the temperature of the second heat treatment > the temperature of the third heat treatment; the deformation amount of the first calendering is larger than that of the second calendering. According to the preparation method provided by the invention, the distribution behavior of the crystal grains in the aluminum-silicon-copper alloy material is optimized by virtue of a specifically designed processing process, so that the refining and redistribution of the crystal grains of the aluminum-silicon-copper alloy material are realized, the internal structure of the crystal grains is improved, the structure is more uniform, and the crystal orientation is proper; and the requirements of semiconductor manufacturing sputtering target materials on crystal grains and crystal orientation are met, and the good using performance is achieved.

Description

Technical Field

[0001] This invention relates to the field of aluminum-silicon-copper target technology, and specifically to a method for preparing an aluminum-silicon-copper target with a grain size ≤120μm. Background Technology

[0002] High-purity aluminum-silicon-copper (Al-Si-Cu) alloy sputtering targets are a key high-performance sputtering target material, mainly used in semiconductor, flat panel display, integrated circuit and other fields. Specifically, they are used to form thin films through physical vapor deposition (PVD) technology to meet the stringent requirements of electronic devices for conductivity, anti-electromigration and film uniformity.

[0003] CN107012345A discloses a method for preparing an aluminum-silicon-copper alloy. By adjusting the process and parameters, the porosity of the alloy is improved. In addition, the alloy is prepared into an ingot using spray deposition technology, and the ingot is densified by hot isostatic pressing. This method is low in cost, simple in equipment, and short in process.

[0004] CN111719059A discloses a method for preparing a fine-grained high-purity aluminum-silicon-copper alloy target blank for sputtering, comprising: S10 preparing an intermediate alloy: the intermediate alloy is an aluminum-copper intermediate alloy and an aluminum-silicon intermediate alloy; S20: melting the intermediate alloy with 99.9995% pure high-purity aluminum in a vacuum melting furnace, and obtaining an alloy liquid after complete melting; the alloy liquid contains 0.9-1.1 wt% silicon and 0.45-0.55 wt% copper. S30: The alloy liquid is refined online using high-purity argon gas; S40: The refined alloy liquid is subjected to bipolar filtration; S50: The bipolar filtered alloy liquid is cast into φ120-164mm rod blanks to obtain the fine-grained high-purity aluminum-silicon-copper alloy target blank for sputtering. The prepared high-purity AL-1wt%Si-0.5wt%Cu target blank for sputtering has extremely low content of trace impurity elements, good sputtering film formation performance, and uniform composition.

[0005] CN117144307A provides a method for preparing an aluminum-silicon-copper sputtering target. The method includes: (I) providing aluminum raw materials, silicon raw materials, and copper raw materials, and dividing the aluminum raw materials into two parts; (II) melting a portion of the aluminum raw materials to obtain an aluminum melt, then adding the silicon and copper raw materials to the aluminum melt, and performing a first melting at a first temperature to obtain a primary alloy melt, adding the remaining aluminum raw materials to the aluminum-silicon-copper alloy melt, and performing a second melting at a second temperature to obtain a secondary alloy melt; (III) sequentially degassing, refining, and slag removal on the secondary alloy melt to obtain a purified alloy melt; (IV) sequentially casting and cooling the purified alloy melt to obtain an aluminum-silicon-copper ingot. The first temperature is higher than the second temperature. This method solves the problem of Si element aggregation in high-purity aluminum-silicon-copper alloys and can avoid silicon segregation in alloy ingots.

[0006] However, the aluminum-silicon-copper sputtering targets currently prepared still have defects such as uneven internal grain distribution, poor crystal orientation, and excessively large grain size, which make it difficult to meet the requirements of semiconductor manufacturing sputtering targets for grain size and crystal orientation. Summary of the Invention

[0007] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method for preparing aluminum-silicon-copper sputtering targets with a grain size ≤120μm, so as to solve the defects of aluminum-silicon-copper sputtering targets, which still have uneven grains, poor crystal orientation, and excessively large grain size, making it difficult to meet the requirements of semiconductor manufacturing sputtering targets for grain size and crystal orientation.

[0008] To achieve this objective, the present invention adopts the following technical solution:

[0009] This invention provides a method for preparing an aluminum-silicon-copper target with a grain size ≤120μm, the method comprising:

[0010] The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material with a grain size ≤120μm.

[0011] The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment.

[0012] The deformation amount of the first rolling is greater than the deformation amount of the second rolling.

[0013] The preparation method provided by this invention optimizes the grain distribution behavior within the aluminum-silicon-copper alloy material through a specially designed processing procedure, thereby refining and redistributing the grains of the aluminum-silicon-copper alloy material. This improves the internal structure of the grains, resulting in a more uniform microstructure and suitable crystal orientation, which meets the requirements of semiconductor manufacturing sputtering targets for grains and crystal orientation, and has excellent performance.

[0014] As a preferred technical solution of the present invention, the preheating and heat preservation temperature of the first hot forging is 130-170℃.

[0015] Preferably, the preheating and holding time for the first hot forging is ≥1 hour.

[0016] As a preferred technical solution of the present invention, the first hot forging includes: sequential drawing, upsetting, forging to the target target material product size and water cooling, drawing to 160-200% of the original alloy ingot length, and upsetting to 40-50% of the length of the alloy ingot after drawing.

[0017] As a preferred technical solution of the present invention, the first heat treatment includes: holding at 450-500℃ for 10-20 minutes and then water cooling.

[0018] As a preferred technical solution of the present invention, the preheating and holding temperature of the second hot forging is 130-170℃.

[0019] Preferably, the preheating and holding time for the second hot forging is ≥1h.

[0020] As a preferred technical solution of the present invention, the second hot forging includes: sequentially drawing, upsetting, forging to the target target material product size and water cooling, drawing to 160-200% of the original alloy ingot length, and upsetting to 40-50% of the length of the alloy ingot after drawing.

[0021] As a preferred technical solution of the present invention, the second heat treatment includes: holding at 430-470℃ for 10-20 minutes and then water cooling.

[0022] As a preferred embodiment of the present invention, the deformation of the first rolling mill is 50-60%.

[0023] As a preferred embodiment of the present invention, the deformation amount of the second rolling is 20-30%.

[0024] As a preferred technical solution of the present invention, the third heat treatment includes: holding at 360-400℃ for 10-20 minutes and then water cooling.

[0025] Compared with existing technical solutions, the present invention has the following beneficial effects:

[0026] The preparation method provided by the present invention significantly improves the internal structure of the grains through the combination of multiple hot forging, multiple heat treatment and multiple rolling, the structure is more uniform and the crystal orientation is suitable, which meets the requirements of semiconductor manufacturing sputtering target for grains and crystal orientation. The resulting aluminum-silicon-copper target has a grain size ≤120μm and excellent performance. The content of (200) crystal plane is 40-50%. Attached Figure Description

[0027] Figure 1 This is a SEM image of the aluminum-silicon-copper target material obtained in Example 1 of this invention.

[0028] The present invention will now be described in further detail. However, the examples described below are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the claims. Detailed Implementation

[0029] To better illustrate the present invention and facilitate understanding of its technical solutions, typical but non-limiting embodiments of the present invention are as follows:

[0030] High-purity aluminum-silicon-copper (Al-Si-Cu) alloy sputtering targets are a crucial high-performance sputtering target. Although Al-Si-Cu targets can currently be prepared, limitations in the preparation process still result in defects such as uneven grain distribution, poor crystal orientation, and excessively large grain size, making it difficult to meet the requirements of semiconductor manufacturing sputtering targets for grain and crystal orientation. Based on this, this invention optimizes the grain distribution within the Al-Si-Cu alloy material through multiple hot forging, heat treatment, and rolling of Al-Si-Cu ingots. This significantly improves the internal structure of the grains, resulting in a more uniform microstructure and suitable crystal orientation, thus meeting the requirements of semiconductor manufacturing sputtering targets for grain and crystal orientation. It exhibits excellent performance, as detailed below:

[0031] I. This embodiment provides a method for preparing an aluminum-silicon-copper target with a grain size ≤120μm, the preparation method comprising:

[0032] The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material with a grain size ≤120μm.

[0033] The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment.

[0034] The deformation amount of the first rolling is greater than the deformation amount of the second rolling.

[0035] In this invention, aluminum-silicon-copper alloy material refers to alloy ingots or other materials obtained by smelting or powder metallurgy. Specifically, the aluminum-silicon-copper alloy material includes, by mass percentage: 0.2-1% copper, 0.5-2% silicon, and the balance being aluminum. The grain size of the original aluminum-silicon-copper alloy material is 500-1000 μm. The purity of the aluminum-silicon-copper alloy material can be reasonably selected according to actual conditions, such as high-purity or ultra-high-purity alloy materials.

[0036] In this invention, the high purity refers to a purity of ≥99.99%.

[0037] In this invention, the ultra-high purity is ≥99.9999%.

[0038] The preheating and holding temperature of the first hot forging is 130-170℃, for example, it can be 130℃, 134℃, 138℃, 142℃, 146℃, 150℃, 154℃, 158℃, 162℃, 166℃ or 170℃, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0039] The preheating and holding time for the first hot forging is ≥1h, for example, it can be 1h, 1.4h, 1.8h, 2.2h, 2.6h, 3h, 3.4h, 3.8h, 4.2h, 4.6h or 5h, but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0040] The first hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling. The drawing is to 160-200% of the original alloy ingot length, for example, 160%, 164%, 168%, 172%, 176%, 180%, 184%, 188%, 192%, 196%, or 200%, etc. The upsetting is to 40-50% of the length of the alloy ingot after drawing, for example, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49%, or 50%, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0041] In this invention, forging to the target target material product size refers to forging the ingot diameter to the material design size, such as forging the upsetting material to the target target material product size by forging the thickness, diameter, or length and width of the material.

[0042] The first heat treatment includes: holding at 450-500℃ for 10-20 minutes followed by water cooling. The holding temperature is 450-500℃, for example, it can be 450℃, 455℃, 460℃, 465℃, 470℃, 475℃, 480℃, 485℃, 490℃, 495℃ or 500℃, etc., and the holding time is 10-20 minutes, for example, it can be 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0043] The preheating and holding temperature of the second hot forging is 130-170℃, for example, it can be 130℃, 134℃, 138℃, 142℃, 146℃, 150℃, 154℃, 158℃, 162℃, 166℃ or 170℃, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0044] The preheating and holding time for the second hot forging is ≥1h, for example, it can be 1h, 1.4h, 1.8h, 2.2h, 2.6h, 3h, 3.4h, 3.8h, 4.2h, 4.6h or 5h, but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0045] The second hot forging includes: sequential drawing, upsetting, forging to the target target material size, and water cooling. The drawing is to 160-200% of the original alloy ingot length, for example, 160%, 164%, 168%, 172%, 176%, 180%, 184%, 188%, 192%, 196%, or 200%, etc. The upsetting is to 40-50% of the length of the alloy ingot after drawing, for example, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49%, or 50%, etc., but is not limited to the listed values. Other unlisted values ​​within this range are also acceptable.

[0046] The second heat treatment includes: holding at 430-470℃ for 10-20 minutes followed by water cooling. The holding temperature is 430-470℃, for example, it can be 430℃, 434℃, 438℃, 442℃, 446℃, 450℃, 454℃, 458℃, 462℃, 466℃ or 470℃, etc., and the holding time is 10-20 minutes, for example, it can be 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0047] The deformation amount of the first rolling is 50-60%, for example, it can be 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59% or 60%, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0048] The deformation amount of the second rolling is 20-30%, for example, it can be 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29% or 30%, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0049] The third heat treatment includes: holding at 360-400℃ for 10-20 minutes followed by water cooling. The holding temperature is 360-400℃, for example, it can be 360℃, 364℃, 368℃, 372℃, 376℃, 380℃, 384℃, 388℃, 392℃, 396℃ or 400℃, etc., and the holding time is 10-20 minutes, for example, it can be 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes, etc., but is not limited to the listed values. Other unlisted values ​​within this range also meet the requirements.

[0050] In this invention, water cooling is preferably performed using cold water at a temperature of 10-40°C.

[0051] II. To illustrate the excellent performance of the aluminum-silicon-copper target material obtained by the preparation method provided by this invention, the following practical example is used for explanation:

[0052] The aluminum-silicon-copper alloy material (purity 99.99%) used in the following examples has the following mass percentage composition: copper 0.5%, silicon 1%, and balance 98.5%.

[0053] Example 1

[0054] This embodiment provides a method for preparing an aluminum-silicon-copper target, as detailed below:

[0055] The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material.

[0056] The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment.

[0057] The deformation amount of the first rolling mill is greater than the deformation amount of the second rolling mill;

[0058] The preheating and holding temperature of the first hot forging is 150°C, and the preheating and holding time is 1 hour.

[0059] The first hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling, with the drawing reaching 180% of the original alloy ingot length and the upsetting reaching 45% of the length of the alloy ingot after drawing;

[0060] The first heat treatment includes: holding at 480°C for 15 minutes followed by water cooling;

[0061] The preheating and holding temperature of the second hot forging is 150℃, and the preheating and holding time is 1 hour;

[0062] The second hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling; drawing to 180% of the original alloy ingot length; and upsetting to 45% of the length of the alloy ingot after drawing.

[0063] The second heat treatment includes: holding at 450°C for 15 minutes followed by water cooling;

[0064] The deformation of the first rolling mill is 55%;

[0065] The deformation amount of the second rolling is 25%;

[0066] The third heat treatment includes: holding at 380°C for 10 minutes followed by water cooling.

[0067] The SEM image of the aluminum-silicon-copper sputtering material product obtained in this embodiment is as follows: Figure 1 As shown.

[0068] Example 2

[0069] This embodiment provides a method for preparing an aluminum-silicon-copper target, as detailed below:

[0070] The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material.

[0071] The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment.

[0072] The deformation amount of the first rolling mill is greater than the deformation amount of the second rolling mill;

[0073] The preheating and holding temperature of the first hot forging is 160℃, and the preheating and holding time is 1 hour.

[0074] The first hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling, with the drawing reaching 170% of the original alloy ingot length and the upsetting reaching 48% of the length of the alloy ingot after drawing;

[0075] The first heat treatment includes: holding at 470°C for 15 minutes followed by water cooling;

[0076] The preheating and holding temperature of the second hot forging is 160℃, and the preheating and holding time is 1 hour;

[0077] The second hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling; drawing to 170% of the original alloy ingot length; and upsetting to 48% of the length of the alloy ingot after drawing.

[0078] The second heat treatment includes: holding at 450°C for 15 minutes followed by water cooling;

[0079] The deformation of the first rolling mill is 58%;

[0080] The deformation amount of the second rolling mill is 23%;

[0081] The third heat treatment includes: holding at 390°C for 15 minutes followed by water cooling.

[0082] Example 3

[0083] This embodiment provides a method for preparing an aluminum-silicon-copper target, as detailed below:

[0084] The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material.

[0085] The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment.

[0086] The deformation amount of the first rolling mill is greater than the deformation amount of the second rolling mill;

[0087] The preheating and holding temperature of the first hot forging is 130℃, and the preheating and holding time is 2h;

[0088] The first hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling, with the drawing reaching 160% of the original alloy ingot length and the upsetting reaching 40% of the length of the alloy ingot after drawing;

[0089] The first heat treatment includes: holding at 450°C for 20 minutes followed by water cooling;

[0090] The preheating and holding temperature for the second hot forging is 130℃, and the preheating and holding time is 2 hours.

[0091] The second hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling; drawing to 160% of the original alloy ingot length; and upsetting to 40% of the length of the alloy ingot after drawing.

[0092] The second heat treatment includes: holding at 430°C for 20 minutes followed by water cooling;

[0093] The deformation of the first rolling mill is 50%;

[0094] The deformation amount of the second rolling is 20%;

[0095] The third heat treatment includes: holding at 360°C for 20 minutes followed by water cooling.

[0096] Example 4

[0097] This embodiment provides a method for preparing an aluminum-silicon-copper target, as detailed below:

[0098] The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material.

[0099] The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment.

[0100] The deformation amount of the first rolling mill is greater than the deformation amount of the second rolling mill;

[0101] The preheating and holding temperature of the first hot forging is 170℃, and the preheating and holding time is 1 hour.

[0102] The first hot forging includes: sequentially drawing, upsetting, forging to the target target material product size, and water cooling, drawing to 200% of the original alloy ingot length, and upsetting to 50% of the length of the alloy ingot after drawing;

[0103] The first heat treatment includes: holding at 500°C for 10 minutes followed by water cooling;

[0104] The preheating and holding temperature for the second hot forging is 170℃, and the preheating and holding time is 2 hours.

[0105] The second hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling; drawing to 200% of the original alloy ingot length; and upsetting to 50% of the length of the alloy ingot after drawing.

[0106] The second heat treatment includes: holding at 470°C for 10 minutes followed by water cooling;

[0107] The deformation of the first rolling mill is 60%;

[0108] The deformation amount of the second rolling is 30%;

[0109] The third heat treatment includes: holding at 400°C for 10 minutes followed by water cooling.

[0110] Comparative Example 1

[0111] The only difference from Example 1 is that the first hot forging is not performed.

[0112] Comparative Example 2

[0113] The only difference from Example 1 is that the first heat treatment is not performed.

[0114] Comparative Example 3

[0115] The only difference from Example 1 is that a second hot forging is not performed.

[0116] Comparative Example 4

[0117] The only difference from Example 1 is that a second heat treatment is not performed.

[0118] Comparative Example 5

[0119] The only difference from Example 1 is that the first calendering is not performed.

[0120] Comparative Example 6

[0121] The only difference from Example 1 is that the second calendering is not performed.

[0122] Comparative Example 7

[0123] The only difference from Example 1 is that a third heat treatment is not performed.

[0124] Comparative Example 8

[0125] The only difference from Example 1 is that the temperature of the first heat treatment is 450°C.

[0126] Comparative Example 9

[0127] The only difference from Example 1 is that the temperature of the second heat treatment is 470°C.

[0128] Comparative Example 9

[0129] The only difference from Example 1 is that the temperature of the third heat treatment is 470°C.

[0130] Comparative Example 10

[0131] The only difference from Example 1 is that the deformation of the first rolling is 25%.

[0132] Comparative Example 11

[0133] The only difference from Example 1 is that the deformation of the second rolling is 55%.

[0134] Example 5

[0135] The only difference from Example 1 is that in the first hot forging, upsetting is performed first and then drawing is performed to ensure that the amount of deformation remains unchanged.

[0136] Example 6

[0137] The only difference from Example 1 is that in the second hot forging, upsetting is performed first and then drawing is performed to ensure that the amount of deformation remains unchanged.

[0138] Example 7

[0139] The only difference from Example 1 is that the deformation of the first rolling is 40%.

[0140] Example 8

[0141] The only difference from Example 1 is that the deformation of the second rolling is 40%.

[0142] The aluminum-silicon-copper targets obtained in the above examples and comparative examples were subjected to grain size testing according to GB 6394-2017 Method for Determining Average Grain Size of Metals, and the grain orientation of the (200) crystal plane was detected by XRD. The results are shown in Table 1 below.

[0143] Table 1

[0144]

[0145] As shown in Table 1, the preparation method provided by the present invention improves the internal structure of the aluminum-silicon-copper target material by designing the preparation process through multiple hot forging, multiple heat treatment and multiple rolling. The structure is more uniform and the crystal orientation is suitable, which meets the requirements of semiconductor manufacturing sputtering target material for grain (grain size ≤120μm) and crystal orientation ((200) crystal plane content can be controlled to 40-50%), and has excellent performance.

[0146] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0147] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0148] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for preparing an aluminum-silicon-copper target with a grain size ≤120μm, characterized in that, The preparation method includes: The aluminum-silicon-copper alloy material is subjected to a first hot forging, a first heat treatment, a second hot forging, a second heat treatment, a first rolling, a second rolling, and a third heat treatment in sequence to obtain an aluminum-silicon-copper target material with a grain size ≤120μm. The temperature of the first heat treatment is greater than the temperature of the second heat treatment, which is greater than the temperature of the third heat treatment. The deformation amount of the first rolling is greater than the deformation amount of the second rolling.

2. The preparation method according to claim 1, characterized in that, The preheating and holding temperature of the first hot forging is 130-170℃; Preferably, the preheating and holding time for the first hot forging is ≥1 hour.

3. The preparation method according to claim 1, characterized in that, The first hot forging includes: sequential drawing, upsetting, forging to the target target material product size and water cooling, drawing to 160-200% of the original alloy ingot length, and upsetting to 40-50% of the length of the alloy ingot after drawing.

4. The preparation method according to claim 1, characterized in that, The first heat treatment includes: holding at 450-500℃ for 10-20 minutes followed by water cooling.

5. The preparation method according to claim 1, characterized in that, The preheating and holding temperature for the second hot forging is 130-170℃; Preferably, the preheating and holding time for the second hot forging is ≥1h.

6. The preparation method according to claim 1, characterized in that, The second hot forging includes: sequential drawing, upsetting, forging to the target target material product size, and water cooling. The drawing is to 160-200% of the original alloy ingot length, and the upsetting is to 40-50% of the length of the alloy ingot after drawing.

7. The preparation method according to claim 1, characterized in that, The second heat treatment includes: holding at 430-470℃ for 10-20 minutes followed by water cooling.

8. The preparation method according to claim 1, characterized in that, The deformation of the first rolling mill is 50-60%.

9. The preparation method according to claim 1, characterized in that, The deformation amount of the second rolling is 20-30%.

10. The preparation method according to claim 1, characterized in that, The third heat treatment includes: holding at 360-400℃ for 10-20 minutes followed by water cooling.

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