Integrated coating equipment and combined passivation back contact battery manufacturing method

Abstract

The invention relates to integrated coating equipment and a manufacturing method of a combined passivation back contact battery. The feeding cavity, the oxide layer process cavity, the silicon nitride process cavity and the discharging cavity are sequentially arranged in the same structure, so that preparation of the silicon oxide layer and the silicon nitride layer can be integrally completed in a continuous and closed environment. Due to the fact that the process cavities are sequentially arranged in the same equipment system, the silicon wafers do not need to be manually or mechanically transferred in the whole process from feeding to discharging, and the problems of atmosphere change, temperature difference fluctuation and external pollution caused by equipment switching in a traditional process are solved. Therefore, the vacuum continuity of the whole manufacturing process is kept, the compactness and the interface cleanliness of the film layer are remarkably improved, and the bonding strength of the film layer is higher. Meanwhile, due to the integrated structure, the configuration requirements of a plurality of devices and a conveying system are reduced, the occupied area and energy consumption of a production line are reduced, the process period is shortened, and the production efficiency and the device utilization rate are remarkably improved.

Description

Technical Field

[0001] This application relates to the field of battery technology, and in particular to an integrated coating apparatus and a method for fabricating a combined passivated back contact battery. Background Technology

[0002] Combined passivated back contact solar cells (HTBCs) represent an advanced technology for high-efficiency crystalline silicon solar cells. Through the innovative combination of hybrid passivation and back contact structures, they overcome the light-shielding problem of the front electrode in traditional cells, making them one of the most promising high-efficiency crystalline silicon technologies currently available. Their application demand continues to grow in photovoltaic power plants, distributed generation, and other scenarios. Currently, mainstream HTBC light-receiving film structures generally include a passivation layer (mostly aluminum oxide) and an anti-reflection layer (commonly silicon nitride). Some also incorporate doped layers (such as phosphorus-doped silicon layers) to optimize conductivity. In terms of process, the industry generally uses atomic layer deposition (ALD) equipment to prepare high-precision passivation layers, and then plasma-enhanced chemical vapor deposition (PECVD) equipment to prepare doped and antireflection layers. Due to the differences in the principles of the two equipment, the complete preparation of the front film layer requires at least two independent machines to complete in steps, and the machines need to be equipped with transfer equipment or manual assistance for transportation. This not only increases the cost of equipment purchase and maintenance, but also extends the production cycle. At the same time, during the transportation process, the cells are prone to edge damage and surface contamination due to mechanical collisions, environmental dust adhesion, or changes in temperature and humidity, which significantly increases the defect rate of the cells. Summary of the Invention

[0003] Based on this, an integrated coating equipment and a method for fabricating a combined passivated back contact battery are provided to solve the technical problems of preparing a high-precision passivation layer using atomic layer deposition (ALD) equipment and then preparing a doped layer and an antireflection layer using plasma enhanced chemical vapor deposition (PECVD) equipment. This results in the need for supporting transfer equipment or manual assistance between the equipment, which not only increases the cost of equipment purchase and maintenance but also prolongs the production cycle and is prone to edge damage and surface contamination.

[0004] On the one hand, an integrated coating equipment is provided, which is located between a loading platform and a unloading platform. The integrated coating equipment is provided with a feeding chamber, an oxide layer process chamber, a silicon nitride process chamber and an unloading chamber in sequence from the loading platform to the unloading platform. The oxide layer process chamber is equipped with a plasma-enhanced chemical vapor deposition (PECVD) linear ion source, which uses radio frequency (RF) to excite plasma discharge to ionize O2 into plasma. The oxide layer process chamber is used to prepare a silicon oxide layer. The silicon nitride process chamber is equipped with an inductively coupled plasma (ICP) ion source, which is used to prepare a silicon nitride layer.

[0005] Furthermore, the oxide layer process chamber is equipped with a first heating system, a vacuum system, and a first gas supply mechanism. The heating temperature of the first heating system is 150-350℃, and the first gas supply mechanism provides SiH4, O2, O3, and N2O gases. The process pressure is 1-10Pa.

[0006] Furthermore, the silicon nitride process chamber is equipped with a second heating system, a vacuum system, a first radio frequency power supply, and a second gas supply mechanism. The heating temperature of the second heating system is 200°C, and the second gas supply mechanism provides NH3 and SiH4 gases. The process pressure is 3-7 Pa.

[0007] Furthermore, a first preheating chamber is also included between the feeding chamber and the oxide layer process chamber, and a preheating heating system is provided in the first preheating chamber. A cooling chamber is also included between the silicon nitride process chamber and the discharge chamber.

[0008] Furthermore, a first buffer chamber is also included between the first preheating chamber and the oxide layer process chamber, and a buffer heating system is provided in the first buffer chamber. A second buffer chamber is also included between the silicon nitride process chamber and the cooling chamber.

[0009] Furthermore, a silicon oxynitride process chamber is also included between the silicon nitride process chamber and the cooling chamber. The silicon oxynitride process chamber is used to prepare silicon oxynitride. The silicon oxynitride process chamber is equipped with a third heating system, a vacuum system, a second radio frequency power supply, and a third gas supply mechanism. The heating temperature of the third heating system is 200°C, and the third gas supply mechanism provides NH3, O2, and SiH4 gases. The process pressure is 3-7 Pa.

[0010] Furthermore, an isolation position is also included between the oxide layer process cavity and the silicon nitride process cavity, and the isolation position is evacuated by a vacuum system to prevent cross-contamination of gases.

[0011] Furthermore, the power of the plasma-enhanced chemical vapor deposition (PECVD) linear ion source is 50-500W, the radio frequency of the inductively coupled plasma (ICP) ion source is 13.56-40.68MHz, and the radio frequency power of the inductively coupled plasma (ICP) ion source is 8000W.

[0012] On the other hand, a method for fabricating a combined passivated back contact battery is also provided, the method comprising: S100. A double-sided polished n-type doped silicon substrate 1 is provided, wherein the n-type doped silicon substrate 1 includes a backlight surface and a light-receiving surface; S101. A tunneling oxide layer 4 and an n-type doped silicon crystal layer 5 are sequentially prepared on the back surface of the n-type doped silicon substrate 1. S102, Laser etching is performed on the tunneling oxide layer 4 and the n-type doped silicon layer 5 on the backlight surface of the n-type doped silicon layer 1 to form openings 11 at intervals; S103. The n-type doped silicon substrate 1 is chemically cleaned and texturized so that the light-receiving surface of the n-type doped silicon substrate 1 and the bottom of the corresponding opening 11 are texturized. S200. On the light-receiving surface of the n-type doped silicon substrate 1, a silicon oxide layer 2 and a silicon nitride layer 3 are sequentially prepared using the integrated coating equipment described above.

[0013] Furthermore, after preparing the silicon oxide layer 2 and the silicon nitride layer 3, the process also includes: S300, an intrinsic silicon layer 6 and a p-type doped amorphous silicon layer 7 are prepared on the back surface of the n-type doped silicon substrate 1; S301. On the backlight surface of the n-type doped silicon substrate 1, the intrinsic silicon layer 6 and the p-type doped amorphous silicon layer 7 are laser-processed on both sides of the opening 11 to form an opening 12 and then cleaned. The opening 12 exposes the n-type doped silicon crystal layer 5. S302, Deposit a transparent conductive film 8 on the backlight surface of the n-type doped silicon substrate 1, and etch an insulating groove 13 on the transparent conductive film 8 located between the opening 11 and the opening 12. S303. A first electrode 9 is formed on the transparent conductive film 8 inside the opening 12, and a second electrode 10 is formed on the transparent conductive film 8 inside the hole 11.

[0014] The aforementioned integrated coating equipment and combined passivation back contact battery fabrication method, by sequentially arranging the feeding chamber, oxide layer process chamber, silicon nitride process chamber, and unloading chamber within the same structure, allows the preparation of silicon oxide and silicon nitride layers to be completed in a continuous, closed environment. The oxide layer process chamber utilizes a plasma-enhanced chemical vapor deposition linear ion source, using radio frequency excited plasma to ionize oxygen and form plasma, thereby efficiently depositing a silicon oxide layer on the silicon wafer surface. The silicon nitride process chamber uses an inductively coupled plasma ion source to deposit the silicon nitride layer, achieving continuous preparation and precise control of two different functional films. Because the process chambers are sequentially arranged within the same equipment system, the entire process from wafer loading to unloading does not require manual or mechanical transfer, avoiding the atmosphere changes, temperature fluctuations, and external contamination problems caused by equipment switching in traditional processes. As a result, the vacuum continuity of the overall process is maintained, the density and interface cleanliness of the films are significantly improved, and the film bonding strength is higher. At the same time, the integrated structure reduces the configuration requirements of multiple devices and conveying systems, reduces the footprint and energy consumption of the production line, shortens the process cycle, and significantly improves production efficiency and equipment utilization. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a structural block diagram of an integrated coating device according to one embodiment of this application; Figure 2 This is a structural block diagram of another integrated coating device in one embodiment of this application; Figure 3 This is a flowchart of a method for fabricating a combined passivated back contact battery in one embodiment of this application; Figure 4 This is a structural diagram of a combined passivated back contact battery fabricated according to a method for fabricating a combined passivated back contact battery in one embodiment of this application. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0018] As described in the background section, in terms of equipment, the front film layer of HTBC back contact batteries is prepared using both ALD and PECVD equipment. This requires transferring the battery cells between at least two machines, increasing equipment purchase and maintenance costs and extending the production cycle. Furthermore, during transport, the cells are susceptible to edge damage and surface contamination due to mechanical collisions, environmental dust adhesion, or temperature and humidity changes, significantly increasing the defect rate. While commonly used ALD equipment can achieve ultra-thin and uniform film deposition, this technology is based on a layer-by-layer reaction principle, resulting in slow batch deposition rates. It also requires high-purity specialty gases, with gas consumption 2-3 times that of PECVD equipment, directly increasing the material cost per unit and making it difficult to meet the economic requirements of large-scale mass production.

[0019] like Figure 1 , Figure 2 As shown, an integrated coating equipment is provided. The integrated coating equipment is located between a loading platform and a unloading platform. The integrated coating equipment is provided with a feeding chamber, an oxide layer process chamber, a silicon nitride process chamber and an unloading chamber in sequence from the loading platform to the unloading platform. The oxide layer process chamber is equipped with a plasma-enhanced chemical vapor deposition (PECVD) linear ion source, which uses radio frequency (RF) to excite plasma discharge to ionize O2 into plasma. The oxide layer process chamber is used to prepare a silicon oxide layer. The silicon nitride process chamber is equipped with an inductively coupled plasma (ICP) ion source, which is used to prepare a silicon nitride layer.

[0020] Furthermore, the oxide layer process chamber is equipped with a first heating system, a vacuum system, and a first gas supply mechanism. The heating temperature of the first heating system is 150-350℃, and the first gas supply mechanism provides SiH4, O2, O3, and N2O gases. The process pressure is 1-10Pa.

[0021] Furthermore, the silicon nitride process chamber is equipped with a second heating system, a vacuum system, a first radio frequency power supply, and a second gas supply mechanism. The heating temperature of the second heating system is 200°C, and the second gas supply mechanism provides NH3 and SiH4 gases. The process pressure is 3-7 Pa.

[0022] like Figure 1 , Figure 2 As shown, a first preheating chamber is also included between the feeding chamber and the oxide layer process chamber, and a preheating heating system is provided in the first preheating chamber. A cooling chamber is also included between the silicon nitride process chamber and the discharge chamber.

[0023] like Figure 1 , Figure 2 As shown, a first buffer chamber is further included between the first preheating chamber and the oxide layer process chamber, and a buffer heating system is provided in the first buffer chamber. A second buffer chamber is further included between the silicon nitride process chamber and the cooling chamber.

[0024] like Figure 2 As shown, a silicon oxynitride process chamber is also included between the silicon nitride process chamber and the cooling chamber. The silicon oxynitride process chamber is used to prepare silicon oxynitride. The silicon oxynitride process chamber is equipped with a third heating system, a vacuum system, a second radio frequency power supply and a third gas supply mechanism. The heating temperature of the third heating system is 200°C. The third gas supply mechanism provides NH3, O2 and SiH4 gases. The process pressure is 3-7 Pa.

[0025] like Figure 1 , Figure 2 As shown, an isolation position is also included between the oxide layer process cavity and the silicon nitride process cavity. The isolation position is evacuated by a vacuum system to prevent cross-contamination of gases.

[0026] Furthermore, the power of the plasma-enhanced chemical vapor deposition (PECVD) linear ion source is 50-500W, the radio frequency of the inductively coupled plasma (ICP) ion source is 13.56-40.68MHz, and the radio frequency power of the inductively coupled plasma (ICP) ion source is 8000W.

[0027] In an integrated coating equipment, the entire system includes a feeding chamber and a discharging chamber. A first preheating chamber is located behind the feeding chamber, near the unloading chamber. This first preheating chamber heats the silicon wafer to the target temperature. Behind the first preheating chamber, near the discharging chamber, is a first buffer chamber. Next to the first buffer chamber, near the discharging chamber, is an oxide layer process chamber. Further, near the discharging chamber, is a silicon nitride process chamber. An isolation zone exists between the silicon oxide and silicon nitride process chambers. Near the discharging chamber, the silicon nitride process chamber is equipped with a second buffer chamber, a cooling chamber, and a discharging chamber. A silicon oxynitride process chamber can be added behind the silicon nitride process chamber as needed.

[0028] Each chamber is equipped with a vacuum system, and the preheating chamber, buffer chamber, and process chamber are each equipped with a heating system.

[0029] A transmission system is used to feed the carrier plate from the loading platform into the feeding chamber. After coating in each chamber, it is conveyed from the discharge chamber to the unloading platform for exit. The transmission system is a conveyor belt, which is at the same height in the feeding chamber, the first preheating chamber, the first buffer chamber, the oxide layer process chamber, the isolation position, the silicon nitride process chamber, the silicon oxynitride process chamber, the second buffer chamber, the cooling chamber, and the discharge chamber. The integrated coating equipment integrates multiple process chambers into one unit. The silicon wafer can complete the entire process from preheating, oxide layer coating, silicon nitride coating to cooling inside the equipment, eliminating the need for transfer between different equipment, which greatly improves production efficiency and product quality stability.

[0030] like Figure 3 As shown, this application also provides a method for fabricating a combined passivated back contact battery, the method comprising: S100. A double-sided polished n-type doped silicon substrate 1 is provided, wherein the n-type doped silicon substrate 1 includes a backlight surface and a light-receiving surface; S101. A tunneling oxide layer 4 and an n-type doped silicon crystal layer 5 are sequentially prepared on the back surface of the n-type doped silicon substrate 1. S102, Laser etching is performed on the tunneling oxide layer 4 and the n-type doped silicon layer 5 on the backlight surface of the n-type doped silicon layer 1 to form openings 11 at intervals; S103. The n-type doped silicon substrate 1 is chemically cleaned and texturized so that the light-receiving surface of the n-type doped silicon substrate 1 and the bottom of the corresponding opening 11 are texturized. S200. On the light-receiving surface of the n-type doped silicon substrate 1, a silicon oxide layer 2 and a silicon nitride layer 3 are sequentially prepared using the integrated coating equipment described above.

[0031] In the process of preparing the silicon oxide layer 2, one or more combined gases of SiH4 and O2, O3, and N2O are used. The process pressure is 1-10 Pa, the deposition temperature is 150-350℃, and the power of the plasma-enhanced chemical vapor deposition (PECVD) linear ion source is 50-500 W, and the conveying speed is 10-500 cm / min. In the process of preparing silicon nitride layer 3, NH3 and SiH4 gases are used. The radio frequency frequency of the inductively coupled plasma (ICP) ion source is 13.56-40.68MHz, the radio frequency power of the inductively coupled plasma (ICP) ion source is 8000W, the deposition temperature is 200℃, and the process pressure is 3-7Pa.

[0032] This method achieves high structural integrity and surface cleanliness of the solar cell by sequentially fabricating the tunneling oxide layer, n-type doped silicon crystal layer, and the silicon oxide and silicon nitride layers on the light-receiving surface within the same process system. The integrated coating equipment enables continuous deposition of silicon oxide and silicon nitride films in a vacuum environment, avoiding environmental exposure and transport contamination caused by step-by-step fabrication on multiple machines, thus ensuring the quality of the film interface and the uniformity of film formation. Through precise passivation of the light-receiving surface and synergistic optimization of the anti-reflection structure, the carrier recombination loss of the solar cell is significantly reduced, the incident light utilization rate is improved, and ultimately the photoelectric conversion efficiency of the cell is significantly enhanced. Simultaneously, the integrated process simplifies the production process, shortens the process cycle, and provides an efficient and stable technical path for large-scale mass production.

[0033] Furthermore, after preparing the silicon oxide layer 2 and the silicon nitride layer 3, the process also includes: S300, an intrinsic silicon layer 6 and a p-type doped amorphous silicon layer 7 are prepared on the back surface of the n-type doped silicon substrate 1; S301. On the backlight surface of the n-type doped silicon substrate 1, the intrinsic silicon layer 6 and the p-type doped amorphous silicon layer 7 are laser-processed on both sides of the opening 11 to form an opening 12 and then cleaned. The opening 12 exposes the n-type doped silicon crystal layer 5. S302, Deposit a transparent conductive film 8 on the backlight surface of the n-type doped silicon substrate 1, and etch an insulating groove 13 on the transparent conductive film 8 located between the opening 11 and the opening 12. S303. A first electrode 9 is formed on the transparent conductive film 8 inside the opening 12, and a second electrode 10 is formed on the transparent conductive film 8 inside the hole 11.

[0034] like Figure 4 As shown, Figure 4This is a structural diagram of a combined passivated back contact cell fabricated using a combined passivated back contact cell fabrication method. The first electrode 9 serves as the main grid line, the second electrode 10 serves as the fine grid, the tunneling oxide layer 4 and the n-type doped silicon layer 5 constitute the first semiconductor layer 14, and the intrinsic silicon layer 6 and the p-type doped amorphous silicon layer 7 constitute the second semiconductor layer 15.

[0035] The aforementioned integrated coating equipment and combined passivation back contact battery fabrication method, by sequentially arranging the feeding chamber, oxide layer process chamber, silicon nitride process chamber, and unloading chamber within the same structure, allows the preparation of silicon oxide and silicon nitride layers to be completed in a continuous, closed environment. The oxide layer process chamber utilizes a plasma-enhanced chemical vapor deposition linear ion source, using radio frequency excited plasma to ionize oxygen and form plasma, thereby efficiently depositing a silicon oxide layer on the silicon wafer surface. The silicon nitride process chamber uses an inductively coupled plasma ion source to deposit the silicon nitride layer, achieving continuous preparation and precise control of two different functional films. Because the process chambers are sequentially arranged within the same equipment system, the entire process from wafer loading to unloading does not require manual or mechanical transfer, avoiding the atmosphere changes, temperature fluctuations, and external contamination problems caused by equipment switching in traditional processes. As a result, the vacuum continuity of the overall process is maintained, the density and interface cleanliness of the films are significantly improved, and the film bonding strength is higher. At the same time, the integrated structure reduces the configuration requirements of multiple devices and conveying systems, reduces the footprint and energy consumption of the production line, shortens the process cycle, and significantly improves production efficiency and equipment utilization.

[0036] Example 1 In the battery fabrication process using the above-described battery fabrication method, step S200 employs the integrated coating apparatus of this invention, wherein the carrier plate containing the battery cells is prepared via... Figure 1 The device shown completes the preparation of the front film layer of the battery cell.

[0037] The silicon oxide process chamber uses SiH4 and O2 as the process gases, with a power of 100-300W, a process pressure of 5Pa, and a deposition temperature of 200℃. The silicon nitride process chamber uses SiH4 and NH3 as the process gases, with an RF power supply of 13.56MHz, an RF power of 8000W, a pressure of 5Pa, and a deposition temperature of 200℃.

[0038] Example 2 The difference from Example 1 is that a silicon oxynitride process chamber is added between the silicon nitride process chamber and the second buffer chamber. The process gases are SiH4, NH3 and N2O. The RF power supply is 13.56MHz, the RF power is 8000W, the pressure is 5Pa, and the deposition temperature is 200℃.

[0039] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0040] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. An integrated coating equipment, characterized in that, The integrated coating equipment is located between the loading platform and the unloading platform. The integrated coating equipment is provided with a feeding chamber, an oxide layer process chamber, a silicon nitride process chamber and an unloading chamber in sequence from the loading platform to the unloading platform. The oxide layer process chamber is equipped with a plasma-enhanced chemical vapor deposition linear ion source, which uses radio frequency excited plasma discharge to ionize O2 into plasma. The oxide layer process chamber is used to prepare a silicon oxide layer. The silicon nitride process chamber is equipped with an inductively coupled plasma ion source, which is used to prepare a silicon nitride layer.

2. The integrated coating equipment according to claim 1, characterized in that, The oxide layer process chamber is equipped with a first heating system, a vacuum system and a first gas supply mechanism. The heating temperature of the first heating system is 150-350℃, and the first gas supply mechanism provides SiH4, O2, O3 and N2O gases. The process pressure is 1-10Pa.

3. The integrated coating equipment according to claim 1, characterized in that, The silicon nitride process chamber is equipped with a second heating system, a vacuum system, a first radio frequency power supply, and a second gas supply mechanism. The heating temperature of the second heating system is 200°C, and the second gas supply mechanism provides NH3 and SiH4 gases. The process pressure is 3-7 Pa.

4. The integrated coating equipment according to claim 1, characterized in that, A first preheating chamber is also included between the feeding chamber and the oxide layer process chamber, and a preheating heating system is provided in the first preheating chamber. A cooling chamber is also included between the silicon nitride process chamber and the discharge chamber.

5. The integrated coating equipment according to claim 4, characterized in that, A first buffer chamber is further included between the first preheating chamber and the oxide layer process chamber, and a buffer heating system is provided in the first buffer chamber. A second buffer chamber is further included between the silicon nitride process chamber and the cooling chamber.

6. The integrated coating equipment according to claim 4, characterized in that, Between the silicon nitride process chamber and the cooling chamber, there is also a silicon oxynitride process chamber. The silicon oxynitride process chamber is used to prepare silicon oxynitride. The silicon oxynitride process chamber is equipped with a third heating system, a vacuum system, a second radio frequency power supply and a third gas supply mechanism. The heating temperature of the third heating system is 200°C. The third gas supply mechanism provides NH3, N2O and SiH4 gases. The process pressure is 3-7 Pa.

7. The battery coating apparatus according to any one of claims 1 to 6, characterized in that, An isolation zone is also included between the oxide layer process chamber and the silicon nitride process chamber. The isolation zone is evacuated using a vacuum system to prevent cross-contamination of gases.

8. The integrated coating equipment according to claim 1, characterized in that, The power of the plasma-enhanced chemical vapor deposition linear ion source is 50-500W, the radio frequency of the inductively coupled plasma ion source is 13.56-40.68MHz, and the radio frequency power of the inductively coupled plasma ion source is 8000W.

9. A method for fabricating a combined passivated back contact battery, characterized in that, The method includes: S100. A double-sided polished n-type doped silicon substrate is provided, wherein the n-type doped silicon substrate includes a backlight surface and a light-receiving surface; S101. A tunneling oxide layer and an n-type doped silicon crystal layer are sequentially prepared on the back surface of the n-type doped silicon substrate. S102. Laser etching is performed on the tunneling oxide layer and the n-type doped silicon crystal layer on the backlight surface of the n-type doped silicon crystal layer to form openings at intervals; S103. The n-type doped silicon substrate is chemically cleaned and texturized so that the light-receiving surface of the n-type doped silicon substrate and the bottom of the corresponding openings have a textured surface structure. S200, a silicon oxide layer and a silicon nitride layer are sequentially prepared on the light-receiving surface of the n-type doped silicon substrate using the integrated coating equipment described in any one of claims 1 to 8.

10. The method for fabricating a combined passivated back contact battery according to claim 9, characterized in that, After preparing the silicon oxide layer and the silicon nitride layer, the following steps are also included: S300: An intrinsic silicon layer and a p-type doped amorphous silicon layer are prepared on the back surface of the n-type doped silicon substrate; S301. On the back surface of the n-type doped silicon substrate, the intrinsic silicon layer and the p-type doped amorphous silicon layer are laser-processed on both sides of the opening to form an opening and then cleaned, and the opening exposes the n-type doped silicon crystal layer. S302, Deposit a transparent conductive film on the backlight surface of the n-type doped silicon substrate, and etch an insulating trench on the transparent conductive film located between the opening and the aperture; S303. A first electrode is formed on the transparent conductive film inside the opening, and a second electrode is formed on the transparent conductive film inside the opening.

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