Symmetric control-based resonance regulation and control system

Abstract

The invention discloses a resonance regulation and control system based on symmetry control. The resonance regulation and control system comprises a low-symmetry metal spiral structure and an excitation microstrip circuit. The low-symmetry metal spiral structure is composed of four metal spiral arms, and the four metal spiral arms have two different lengths. The excitation microstrip circuit sequentially comprises a metal strip, a dielectric substrate layer and a metal ground plane; the resonator introduces an electromagnetic resonance mode excited by a first-order current through the asymmetric design of a low-symmetry metal spiral structure, and realizes the regulation and control of resonance characteristics.

Description

A resonant control system based on symmetry manipulation Technical Field

[0001] This invention relates to the field of resonators and transmission lines, and specifically to a resonant control system based on symmetry manipulation. Background Technology

[0002] Artificial localized surface plasmons (ALPs) are electromagnetic resonant modes supported in subwavelength periodic artificial microstructures. The resonant structures of ALPs are typically periodic metallic sawtooth or metallic helical structures. ALPs can reproduce the mode field characteristics of optical frequency ALPs in the microwave and millimeter-wave bands, such as deep subwavelength confinement capability, high-magnification electromagnetic field enhancement, and quality factor. Therefore, they play an important role in the design of microwave and millimeter-wave devices such as high-sensitivity sensors, broadband filters, and miniaturized resonant antennas.

[0003] However, the resonant structures of artificial localized surface plasmons are usually designed around the classical patterns proposed in the early stages, and the design flexibility of subwavelength periodic artificial microstructures has not been fully utilized, and the control of the resonant characteristics of artificial localized surface plasmons remains limited. In addition, existing coupling control techniques usually achieve this by adjusting the coupling distance between resonant structures, and the flexibility of coupling control is still limited in integrated circuit fabrication processes where structural parameters such as dielectric layer thickness are strictly limited. Summary of the Invention

[0004] Purpose of the invention: The purpose of this invention is to provide a resonant control system based on symmetry manipulation, which can effectively control the resonant characteristics of artificial local surface plasmons and the coupling strength between artificial local surface plasmons, and solve the problems that the design flexibility of subwavelength periodic artificial microstructures is not fully utilized and the control of the resonant characteristics of artificial local surface plasmons is still limited.

[0005] Technical Solution: The present invention discloses a resonant control system based on symmetry manipulation, comprising a low-symmetry metal spiral structure and an excitation microstrip circuit; the low-symmetry metal spiral structure consists of four metal spiral arms, each with two different lengths; the excitation microstrip circuit sequentially comprises a metal strip, a dielectric substrate layer, and a metal ground plane; the resonator, through the asymmetric design of the low-symmetry metal spiral structure, introduces an electromagnetic resonance mode excited by a first-order current and achieves control over the resonance characteristics.

[0006] Furthermore, the resonator supports novel electric dipole and magnetic dipole artificial local surface plasmon resonance modes generated by first-order current excitation, as well as magnetic dipole artificial local surface plasmon resonance modes generated by second-order current excitation.

[0007] Furthermore, the resonance characteristics of the novel electric dipole and magnetic dipole artificial localized surface plasmon resonance modes can be modulated by adjusting the length difference between the metal helical arms.

[0008] Furthermore, the resonance characteristics include at least one of the resonant frequency, excitation efficiency, or quality factor.

[0009] Furthermore, two structurally identical low-symmetry metal spiral resonators can be arranged in an overlapping or adjacent manner to form a low-symmetry artificial local surface plasmon coupled resonant system, supporting a variety of hybrid resonance modes.

[0010] Furthermore, the resonant frequency or reflection spectrum characteristics of the hybrid resonance mode can be controlled by adjusting the length difference of the metal helical arms.

[0011] Furthermore, the difference in length of the metal helical arm can modulate the resonant frequency or reflection spectrum characteristics of the hybrid mode by changing the electrical and magnetic coupling strength between the two resonators.

[0012] Furthermore, the dielectric substrate layer can be any one of a printed circuit board dielectric substrate, a semiconductor material, or a flexible organic dielectric; the thickness of the dielectric substrate layer ranges from nanometers to millimeters.

[0013] Furthermore, the metal ground plane, metal strip, or metal spiral structure is made of a single metal material or a composite material of multiple metal materials; the thickness range of the metal ground plane, metal strip, or metal spiral structure covers from the nanometer level to the millimeter level.

[0014] Furthermore, the low-symmetry metal spiral structure is compatible with board-level planar printed circuits or on-chip integrated circuits.

[0015] Beneficial Effects: Compared with existing technologies, this invention has the following significant advantages: This invention generates novel electric dipole and magnetic dipole artificial localized surface plasmon modes generated by first-order currents, while traditional magnetic dipole artificial localized surface plasmon modes are generated by second-order currents. This invention achieves effective control over the resonance characteristics of the novel resonant modes by changing the arm length difference of the metal helical arms. Compared with existing technologies, this invention improves the design flexibility of traditional artificial localized surface plasmon resonances by breaking the symmetry of traditional metal helical structures. In low-symmetry artificial localized surface plasmon coupled resonant systems, the electrical and magnetic coupling strengths between artificial localized surface plasmons can also be effectively adjusted by the arm length difference of the metal helical arms; this invention further expands the method for adjusting the coupling strength between artificial localized surface plasmons. Attached Figure Description

[0016] Figure 1 shows a schematic diagram and resonance characteristics of the low-symmetry artificial localized surface plasmon resonator of the present invention. (a) is a schematic diagram of the structure of the low-symmetry artificial localized surface plasmon resonator, (b) is a simulated reflection spectrum of the low-symmetry artificial localized surface plasmon resonator, (c) is a schematic diagram of the structure of the symmetry artificial localized surface plasmon resonator, and (d) is a simulated reflection spectrum of the symmetry artificial localized surface plasmon resonator.

[0017] Figure 2 shows the current distribution of the low-symmetry artificial local surface plasmons of the present invention. (a) is a schematic diagram of the asymmetric metal spiral structure equivalent to an asymmetric U-shaped metal arm. (b) shows the current distribution of the first-order current in the asymmetric U-shaped metal arm and the magnetic dipole mode formed therein. (c) shows the current distribution of the second-order current in the asymmetric U-shaped metal arm and the magnetic dipole mode formed therein.

[0018] Figure 3 shows the measured reflection spectra of symmetric and low-symmetric artificial local surface plasmon resonators in Embodiment 1 of the present invention. (a) is the measured reflection spectrum of the symmetric artificial local surface plasmon resonator, and (b) is the measured reflection spectrum of the low-symmetric artificial local surface plasmon resonator.

[0019] Figure 4 shows a schematic diagram and resonance characteristics of the low-symmetry artificial local surface plasmon coupled resonance system in Embodiment 2 of the present invention. (a) is a schematic diagram of the structure of the low-symmetry artificial local surface plasmon coupled resonance system, (b) is the simulated reflection spectrum when the normalized arm length difference ΔL / L = 0.5, and (c) is the simulated reflection spectrum when the normalized arm length difference ΔL / L = 0.9.

[0020] Figure 5 shows the measured reflection spectrum of the low-symmetry artificial local surface plasmon coupled resonance system in Embodiment 2 of the present invention. (a) is the measured reflection spectrum when the normalized arm length difference ΔL / L = 0.5, and (b) is the measured reflection spectrum when the normalized arm length difference ΔL / L = 0.9.

[0021] Figure 6 shows a schematic diagram and resonance characteristics of the complementary low-symmetry artificial local surface plasmon resonator in Embodiment 3 of the present invention. (a) is a schematic diagram of the structure of the complementary low-symmetry artificial local surface plasmon resonator, and (b) is a simulated transmission spectrum of the complementary symmetry and low-symmetry artificial local surface plasmon resonators.

[0022] Figure 7 shows the variation of the quality factor of the M2 mode in the complementary low-symmetry artificial local surface plasmon resonator of the present invention with the normalized arm length difference ΔL / L. Detailed Implementation

[0023] The technical solution of the present invention will be further described below with reference to the accompanying drawings.

[0024] Example 1

[0025] This invention provides a resonance modulation method based on symmetry manipulation. A low-symmetry artificial localized surface plasmon resonator and its resonance characteristics are shown in Figures 1(a) and (b). The resonator includes a low-symmetry metal spiral structure and an excitation microstrip circuit. The low-symmetry metal spiral structure consists of four metal spiral arms of two different lengths. The excitation microstrip circuit includes a metal strip, a perforated metal ground plane, and a dielectric substrate layer between the metal strip and the metal ground plane. The low-symmetry artificial localized surface plasmon resonator supports four resonance modes, including M1-M4. A symmetric artificial localized surface plasmon resonator and its resonance characteristics are shown in Figures 1(c) and (d). The low-symmetry artificial localized surface plasmon resonator only supports two resonance modes, m1 and m2.

[0026] The dielectric substrate layer is any one of the following printed circuit or microwave circuit dielectric substrates: FR4, F4B, Rogers' RO4003, 3003, 4350, RT5880, 5870, 6002, 6006, 6010, 6035, 6202, Nelco's N4000-13, N4000-13EPSI, or any semiconductor or dielectric material of Si, SiO2, Al2O3, GaAs, GaN, or a flexible organic dielectric; the thickness of the intermediate dielectric layer is between 10 nm and 10 mm.

[0027] The metal ground plane, metal strip, and metal spiral structure are made of any single material or composite material of copper, tin, gold, silver, chromium, lead, platinum, zinc, aluminum, magnesium, and titanium; the thickness of the metal ground plane, metal strip, and metal spiral structure is between 5 nm and 1 mm.

[0028] Figure 2 illustrates the resonance principles of symmetric and low-symmetric artificial localized surface plasmons disclosed in Embodiment 1 of this invention. The principle is analyzed by equating the asymmetric metal spiral structure to an asymmetric U-shaped metal arm, as shown in Figure (a). The asymmetric U-shaped metal arm supports first-order and second-order currents, generating two types of magnetic dipole resonances respectively. (b) shows the current distribution of the first-order current and the magnetic dipole mode formed in the asymmetric U-shaped metal arm, and (c) shows the current distribution of the second-order current and the magnetic dipole mode formed in the asymmetric U-shaped metal arm. The resonance characteristics of the mode are effectively controlled by the normalized arm length difference ΔL / L.

[0029] Figure 3 shows the reflection spectrum measurement results of the symmetric and low-symmetric artificial local surface plasmon resonators disclosed in Embodiment 1 of the present invention. (a) is the reflection spectrum measured by the fabricated symmetric artificial local surface plasmon resonator, and (b) is the reflection spectrum measured by the fabricated low-symmetric artificial local surface plasmon resonator. The measurement results are in good agreement with the simulation results.

[0030] Example 2

[0031] Figure 4 shows a schematic diagram and resonance characteristics of the low-symmetry artificial localized surface plasmon resonance system disclosed in Embodiment 2 of the present invention. (a) is a schematic diagram of the structure of the low-symmetry artificial localized surface plasmon resonance system. The two low-symmetry artificial localized surface plasmon resonators have the same structure and are completely overlapped. Due to the coupling effect, hybrid modes will be generated between the two low-symmetry artificial localized surface plasmon resonators. The resonant frequencies of the hybrid modes are ω. as and ω s The normalized arm length difference ΔL / L is controlled by the normalized arm length difference ΔL / L, as shown in Figures (b) and (c). (b) shows the simulated reflection spectrum when the normalized arm length difference ΔL / L = 0.5, and (c) shows the simulated reflection spectrum when the normalized arm length difference ΔL / L = 0.9.

[0032] Figure 5 shows the measured reflection spectrum of the low-symmetry artificial local surface plasmon coupled resonance system disclosed in Embodiment 2 of the present invention. (a) is the measured reflection spectrum when the normalized arm length difference ΔL / L = 0.5, and (b) is the measured reflection spectrum when the normalized arm length difference ΔL / L = 0.9. The simulated reflection spectrum and the measured reflection spectrum are in good agreement.

[0033] Example 3

[0034] Figure 6 shows a schematic diagram and resonance characteristics of the complementary low-symmetry artificial localized surface plasmon resonator disclosed in Embodiment 3 of the present invention. The resonator's structural schematic diagram is shown in Figure (a), consisting of a metal strip, a dielectric substrate layer, and a metal ground layer with an etched low-symmetry metal spiral structure, stacked sequentially from top to bottom. Figure (b) shows the transmission spectrum simulation results of the symmetric and low-symmetry artificial localized surface plasmon resonators. The low-symmetry artificial localized surface plasmon resonator generates four resonance modes, including M1-M4, while the symmetric artificial localized surface plasmon resonator generates only two resonance modes, m1 and m2.

[0035] Figure 7 shows the quality factor of the M2 mode in a complementary low-symmetry artificial localized surface plasmon resonator as a function of the normalized arm length difference ΔL / L. As the normalized arm length difference increases, the quality factor of the M2 mode gradually decreases, achieving effective control over the loss characteristics of the complementary low-symmetry artificial localized surface plasmon resonator. The results provided in this embodiment demonstrate that the present invention is highly compatible with various types of integrated circuits, including board-level planar printed circuits and on-chip integrated circuits, further verifying the feasibility of the present invention.

Claims

1. A resonant control system based on symmetry manipulation, characterized in that, It includes a low-symmetry metal spiral structure and an excitation microstrip circuit; the low-symmetry metal spiral structure consists of four metal spiral arms, each with two different lengths; the excitation microstrip circuit consists of a metal strip, a dielectric substrate layer, and a metal ground plane in sequence. The resonator introduces an electromagnetic resonance mode excited by a first-order current through an asymmetric design of a low-symmetry metal spiral structure, and achieves the control of resonance characteristics.

2. The resonant control system based on symmetry manipulation according to claim 1, characterized in that, The resonator supports novel electric dipole and magnetic dipole artificial local surface plasmon resonance modes generated by first-order current excitation, as well as magnetic dipole artificial local surface plasmon resonance modes generated by second-order current excitation.

3. The resonance modulation method based on symmetry manipulation according to claim 2, characterized in that, The resonance characteristics of novel electric dipole and magnetic dipole artificial local surface plasmon resonance modes can be modulated by adjusting the length difference between the metal helical arms.

4. The resonant control system based on symmetry manipulation according to claim 3, characterized in that, The resonance characteristics include at least one of the following: resonant frequency, excitation efficiency, or quality factor.

5. A resonant control system based on symmetry manipulation according to claim 2, characterized in that, Two identical low-symmetry metal spiral resonators are arranged in an overlapping or adjacent manner to form a low-symmetry artificial local surface plasmon coupled resonant system, which supports a variety of hybrid resonance modes.

6. The resonant control system based on symmetry manipulation according to claim 5, characterized in that, The resonant frequency or reflection spectrum characteristics of the hybrid resonance mode can be controlled by adjusting the length difference of the metal helical arms.

7. A resonant control system based on symmetry manipulation according to claim 6, characterized in that, The difference in length of the metal helical arm can modulate the resonant frequency or reflection spectrum characteristics of the hybrid mode by changing the electrical and magnetic coupling strength between the two resonators.

8. The resonant control system based on symmetry manipulation according to claim 1, characterized in that, The dielectric substrate layer can be any one of a printed circuit board dielectric substrate, a semiconductor material, or a flexible organic dielectric; the thickness of the dielectric substrate layer ranges from nanometers to millimeters.

9. A resonant control system based on symmetry manipulation according to claim 1, characterized in that, The metal ground plane, metal strip, or metal spiral structure is made of a single metal material or a composite material of multiple metal materials; the thickness range of the metal ground plane, metal strip, or metal spiral structure covers from nanometer to millimeter.

10. A resonant control system based on symmetry manipulation according to claim 1, characterized in that, The low-symmetry metal spiral structure is compatible with board-level planar printed circuits or on-chip integrated circuits.

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