Radio frequency device and semiconductor device

By combining the IC die with a metal frame and using the silicon layer structure to increase the dielectric constant, the problem of antenna miniaturization in UWB technology is solved, and an efficient RF device design is achieved, simplifying the packaging structure and reducing costs.

CN222126522UActive Publication Date: 2024-12-06CALTERAH SEMICON TECH (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202420777446.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-04-15
Publication Date
2024-12-06
Estimated Expiration
2034-04-15

AI Technical Summary

Technical Problem

In the existing UWB technology, the implementation of antennas mainly depends on separate antenna forms, occupying a large PCB area, and posing challenges to the miniaturization of products, making it difficult to achieve separate processing and miniaturization of antennas.

Method used

The packaging structure is used to combine the IC die with the metal frame, and the metal frame is used as the radiation part of the antenna unit, and the packaging is packaged through plastic encapsulation material, which eliminates the use of the substrate, simplifies the packaging structure, reduces the cost, and uses the silicon layer structure to improve the The dielectric constant of the antenna is used to miniaturize.

Benefits of technology

The antenna is miniaturized and structural simplified, reducing costs, and improving the performance and integration of the antenna, solving the contradiction between size and dielectric constant in UWB antenna design.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a radio frequency device and a semiconductor device, the radio frequency device comprises a packaging structure and an antenna unit, the packaging structure comprises a metal frame and an IC bare chip arranged on the metal frame, a part of the metal frame corresponding to the installation position of the IC bare chip is used as a radiation part of the antenna unit, and the antenna unit is used for radiating the antenna unit. And the radiation part is also electrically connected with the IC bare chip for signal transmission.
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Description

Technical Field

[0001] The present invention relates to radio frequency communication technology, and more particularly to a radio frequency device and a semiconductor device. Background Art

[0002] Ultra Wide Band (UWB) is a carrier-free communication technology. Instead of using a carrier, UWB uses a short energy pulse sequence and expands the pulse to a frequency range through orthogonal frequency division modulation or direct sequencing. It has the advantages of very wide bandwidth, anti-interference ability and resolution. It has been widely used in short-distance communication, positioning and smart home.

[0003] Antennas can convert guided electromagnetic waves into radiated electromagnetic waves or radiated electromagnetic waves into guided electromagnetic waves, and are an indispensable part of UWB systems. In existing UWB technologies, antennas are mainly implemented in the form of separate antennas; the common method is to obtain the antenna structure by etching the metal layer on the PCB board; this approach not only occupies PCB area, but also puts forward antenna design capability requirements for UWB product development. Currently, there is a way to treat the antenna as a separate device. When developing UWB products, you only need to purchase antenna devices and assemble them on the motherboard. This method also has a lot of room for improvement in achieving product miniaturization. Utility Model Content

[0004] Embodiments of the present application provide a radio frequency device and a semiconductor device.

[0005] A radio frequency device includes a packaging structure and an antenna unit, wherein the packaging structure includes a metal frame and an IC bare chip arranged on the metal frame, wherein a portion of the metal frame corresponding to the IC bare chip installation position serves as a radiating portion of the antenna unit, and the radiating portion is also electrically connected to the IC bare chip for signal transmission.

[0006] Exemplarily, the IC bare chip has a first surface, wherein the first surface at least includes a silicon layer structure, and the first surface is attached to the radiation portion.

[0007] Exemplarily, a first conductive structure is further included, wherein the first conductive structure is disposed in the IC bare chip, one end of the first conductive structure is connected to the IC bare chip, and the other end of the first conductive structure passes through the silicon layer structure and is connected to the radiation portion.

[0008] Exemplarily, the IC bare chip also has a second surface opposite to the first surface, and the second surface has a signal connection part for connecting the antenna unit; the first conductive structure runs through the IC bare chip, and one end of the first conductive structure is connected to the signal connection part, and the other end passes through the silicon layer structure to be connected to the radiation part.

[0009] Exemplarily, the first conductive structure is a metallized via or a metal part.

[0010] Exemplarily, the IC bare chip further has a second surface opposite to the first surface, wherein the second surface at least includes a signal connection portion for connecting the antenna unit;

[0011] The radio frequency device further includes a second conductive structure, wherein one end of the second conductive structure is connected to the signal connection portion, and the other end of the second conductive structure is connected to the metal frame, so that the radiation portion is electrically connected to the IC bare chip through the second conductive structure.

[0012] Exemplarily, the second conductive structure is a metal member or a bonding wire.

[0013] Exemplarily, the metal frame includes a metal portion and a metal frame surrounding the metal portion, the metal portion is electrically isolated from the metal frame, the IC bare chip is mounted on the metal portion, and the metal portion serves as the radiation portion.

[0014] Exemplarily, the packaging structure includes a molding material for encapsulating the metal frame and the IC die.

[0015] A semiconductor device comprises a radio frequency device and a PCB board, wherein the radio frequency device is mounted on the PCB board, wherein the radio frequency device adopts the radio frequency device described above.

[0016] Exemplarily, the radio frequency device is mounted on the PCB board, and the radiating portion is facing away from the side of the PCB board, and the radiating portion radiates signals toward a side away from the PCB board.

[0017] Exemplarily, the radio frequency device is mounted on the PCB board, and the radiating portion is directed toward one side of the PCB board, and the radiating portion radiates signals toward the one side of the PCB board.

[0018] Exemplarily, a metal portion is removed at a position on the PCB board corresponding to the radiation portion to form a signal transmission space.

[0019] Exemplarily, a through hole is provided on the PCB board at a position corresponding to the radiation portion to form a signal transmission space.

[0020] In the embodiment of the present application, a radio frequency device is provided, in which the IC bare chip is encapsulated only by a metal frame and a plastic packaging material, eliminating the use of a substrate in the package, greatly simplifying the package structure and reducing costs. At the same time, the part of the metal frame adjacent to the IC bare chip is used as an antenna to achieve a radiation function, further simplifying the structure.

[0021] Other features and advantages of the present application will be described in the following description, and partly become apparent from the description, or be understood by implementing the present application. Other advantages of the present application can be realized and obtained by the schemes described in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are used to provide an understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0023] Figure 1 A schematic diagram of the structure of a radio frequency device provided in an embodiment of the present application;

[0024] Figure 2 for Figure 1 Another structural schematic diagram of the radio frequency device shown;

[0025] Figure 3A-3B for Figure 2 Another structural schematic diagram of the radio frequency device shown;

[0026] Figure 4 for Figure 2 Another structural schematic diagram of the radio frequency device shown;

[0027] Figure 5 for Figure 1 A schematic diagram of the structure of a metal frame in the radio frequency device shown;

[0028] Figure 6 A schematic diagram of the structure of a semiconductor device provided in an embodiment of the present application;

[0029] Figure 7 for Figure 6 Another schematic structural diagram of the semiconductor device shown;

[0030] Figure 8 for Figure 6 Another structural schematic diagram of the semiconductor device shown. DETAILED DESCRIPTION

[0031] The present application describes multiple embodiments, but the description is exemplary rather than restrictive, and it is obvious to those skilled in the art that there may be more embodiments and implementations within the scope of the embodiments described in the present application. Although many possible feature combinations are shown in the drawings and discussed in the specific embodiments, many other combinations of the disclosed features are also possible. Unless specifically limited, any feature or element of any embodiment may be used in combination with any other feature or element in any other embodiment, or may replace any other feature or element in any other embodiment.

[0032] The present application includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The embodiments, features and elements disclosed in the present application may also be combined with any conventional features or elements to form a unique invention scheme. Any features or elements of any embodiment may also be combined with features or elements from other invention schemes to form another unique invention scheme. Therefore, it should be understood that any feature shown and / or discussed in the present application may be implemented individually or in any appropriate combination. Therefore, except for the limitations made according to the attached claims and their equivalents, the embodiments are not subject to other restrictions. In addition, various modifications and changes may be made within the scope of protection of the attached claims.

[0033] In addition, when describing representative embodiments, the specification may have presented the method and / or process as a specific sequence of steps. However, to the extent that the method or process does not rely on the specific order of the steps described herein, the method or process should not be limited to the steps of the specific order described. As will be understood by those of ordinary skill in the art, other sequences of steps are also possible. Therefore, the specific sequence of the steps set forth in the specification should not be interpreted as a limitation to the claims. In addition, the claims for the method and / or process should not be limited to the steps of performing them in the order written, and those skilled in the art can easily understand that these sequences can be changed and still remain within the spirit and scope of the embodiments of the present application.

[0034] Figure 1 A schematic diagram of the structure of a radio frequency device provided in an embodiment of the present application; wherein the radio frequency device includes a packaging structure and an antenna unit arranged on the packaging structure, the packaging structure includes an IC bare chip 20 and a packaging material, and the IC bare chip 20 is packaged using the packaging material.

[0035] Figure 1 The radio frequency device shown is an antenna implemented based on the packaging structure 100, wherein the radio frequency device is a structure combining an antenna and a package, and the essential structure in the package is designed to have a radiation function, so that it can be used as an antenna.

[0036] Since the present application realizes the antenna using the structure of the package itself, part of the structure on the package can be reused, and there is no need to perform hardware design on each structure of the antenna, thus having an incomparable advantage in miniaturization of the antenna.

[0037] The materials of the packaging structure 100 include plastic packaging materials and metal packaging materials; the plastic packaging materials mainly include epoxy resin, polyimide, polyamide, etc. Epoxy resin material is a commonly used packaging material, which has the characteristics of good high temperature resistance, low expansion coefficient and chemical stability, and is often used to make chip packaging with simple internal structure.

[0038] Metal packaging materials support IC bare chips during the packaging process and are used as pins for signal transmission. They can also effectively improve the heat dissipation effect and are mainly used for the packaging of high-power components, such as power amplifiers, switching power supplies, etc. Commonly used materials include aluminum, copper, molybdenum, etc., which have good heat dissipation and mechanical strength.

[0039] Specifically, the packaging structure 100 in the present application includes a metal frame 10 and a plastic packaging material (not shown in the figure), the IC bare chip 20 is set on the metal frame 10, and the plastic packaging material is used to encapsulate the metal frame 10 and the IC bare chip, thereby forming a complete packaging structure.

[0040] In the radio frequency device provided in the present application, the IC bare chip is encapsulated only by a metal frame and a plastic packaging material, eliminating the use of a substrate in the package, greatly simplifying the package structure and reducing costs. At the same time, the part of the metal frame adjacent to the IC bare chip is used as an antenna to achieve a radiation function, further simplifying the structure.

[0041] The metal frame 10 is a part of the packaging structure 100, and is used to install the IC bare chip 20. In practical applications, there are many packaging methods that use the metal frame 10 as a part of the packaging structure 100, for example, the Quad Flat No-leads Package (QFN) is an emerging surface mount chip packaging technology with a small pad size, small volume, and plastic as a sealing material, which has the characteristics of strong applicability, simple structure, and high cost performance.

[0042] Specifically, a portion of the metal frame 10 corresponding to the installation position of the IC bare chip 20 serves as a radiation portion F of the antenna unit, and the radiation portion F is also electrically connected to the IC bare chip 20 for signal transmission.

[0043] The radiation part F may include only one radiation unit, or may include multiple radiation units, wherein each radiation unit is respectively connected to the IC bare chip. The provision of multiple radiation units is beneficial to improving the antenna performance.

[0044] Since the metal frame 10 has good signal conduction performance, part of the structure of the metal frame 10 can realize the radiation part F of the antenna unit; in addition, the IC bare chip 20 has a signal processing circuit to realize the signal transmission and reception functions, and the radiation part F is connected to the signal processing circuit of the IC bare chip 20 to realize the antenna function and transmit and receive signals.

[0045] In the packaging structure 100, the IC bare chip 20 is usually installed on the metal frame 10. The target area corresponding to the installation position of the IC bare chip 20 in the metal frame 10 can be set according to the size of the IC bare chip 20. The part of the metal frame 10 in the target area can be adjacent to the IC bare chip 20. Therefore, the part of the metal frame 10 corresponding to the installation position of the IC bare chip 20 can be used as the radiation part F of the antenna unit.

[0046] In the RF device provided in the embodiment of the present application, in the packaging structure 100, a portion of the metal frame 10 corresponding to the installation position of the IC bare chip 20 is used as the radiation part F of the RF device, so as to facilitate the control of the signal transmission distance between the feeding part and the radiation part F of the RF device and facilitate the miniaturization of the antenna structure.

[0047] Among them, the radio waves output by the radio frequency device include short waves, medium waves, long waves and microwaves, among which microwaves include centimeter waves (i.e. electromagnetic waves from 3GHz to 30GHz, such as electromagnetic waves from 3.1GHz to 10.6GHz, electromagnetic waves in the 24GHz frequency band, etc.) and millimeter waves (i.e. electromagnetic waves from 30GHz to 300GHz, such as electromagnetic waves in the 60GHz frequency band, electromagnetic waves in the 77GHz frequency band (such as 77GHz to 81GHz, etc.)).

[0048] For UWB antennas, according to the regulations of the Federal Communications Commission of the United States, UWB communication systems can operate in the frequency band of 3.1GHz to 10.6GHz, and the system bandwidth is at least 500MHz. In addition, the European Communications Commission has also allocated specific frequency bands for UWB technology, such as 3.4GHz to 4.8GHz and 6GHz to 8.5GHz. In China, it is stipulated that the frequency band used for UWB technology is 7235MHz to 8750MHz.

[0049] From the frequency bands supported by UWB, we can see that the highest operating frequency of UWB is about 10 GHz.

[0050] During antenna design, the size of the antenna is usually related to the antenna's operating frequency. The operating frequency of the UWB antenna corresponds to a wavelength of about 3cm. However, the UWB package size is less than 1cm, so there is a huge contradiction between the required size of the antenna and the size of the package itself.

[0051] In order to solve the problem of miniaturization of UWB antennas, the present application provides the following solutions, including:

[0052] The higher the dielectric constant of the antenna, the smaller the size of the antenna; conversely, the smaller the dielectric constant of the antenna, the larger the size of the antenna. Based on the relationship between the size of the antenna and the dielectric constant, the structure of the antenna can be realized by using a higher dielectric constant.

[0053] Figure 2 for Figure 1 Another structural schematic diagram of the radio frequency device is shown. Figure 2 As shown, the IC die 20 has a first surface 20A, wherein the first surface 20A at least includes a silicon layer structure 21 , and the first surface 20A is in contact with the radiation portion F.

[0054] In the embodiment of the present application, the IC bare chip 20 has a silicon layer structure 21 ; wherein the silicon layer structure 21 is disposed adjacent to the radiation portion F, so that the silicon layer structure 21 can serve as a support for the radiation portion F and as a dielectric constant of the antenna.

[0055] The dielectric constant of conventional organic materials is about 4, while the dielectric constant of silicon materials is about 11. From the values ​​of the dielectric constants, it can be seen that the silicon layer structure 21 in the IC bare chip 20 has a higher dielectric constant.

[0056] Since the first surface 20A having the silicon layer structure 21 is attached to the radiation portion F, it is equivalent to realizing the antenna structure supported by the silicon substrate. Compared with the antenna structure supported by the conventional organic material substrate, the antenna structure supported by the silicon substrate is much smaller than the conventional antenna, thereby realizing the miniaturization of the UWB antenna.

[0057] Figure 3A-3B for Figure 2 Another structural schematic diagram of the radio frequency device is shown. A first conductive structure 211 is also provided in the IC bare chip 20 , and the radiation portion F is electrically connected to the IC bare chip 20 through the first conductive structure 211 .

[0058] The number of the first conductive structures 211 corresponds to the number of the radiation units included in the radiation portion F, and each radiation unit is electrically connected to the IC bare chip through a first conductive structure 211 .

[0059] like Figure 3AAs shown, in one embodiment, the IC die has a signal processing circuit, and the IC die 20 also has a second surface opposite to the first surface 20A, wherein the second surface is provided with at least one signal connection portion 22 for connecting the signal processing circuit in the IC die; a first conductive structure 211 runs through the IC die, and one end of the first conductive structure 211 is connected to the signal connection portion 22, and the other end passes through the silicon layer structure 21 to connect to the radiation portion F. In this embodiment, there is no need to change the circuit inside the IC die, and only a first conductive structure 211 that runs through the IC die needs to be added, which is conducive to simplifying the structure and reducing costs.

[0060] like Figure 3B As shown, it is another variant embodiment. In this embodiment, the first conductive structure 211 does not penetrate the IC bare chip. One end of the first conductive structure 211 is located inside the IC bare chip and is used to connect to the signal processing circuit inside the IC bare chip. The other end passes through the silicon layer structure 21 and is connected to the radiation part F, providing a signal transmission path for the signal between the signal processing circuit and the radiation part F, thereby realizing the electrical connection between the IC bare chip and the radiation part F of the antenna unit.

[0061] The signal processing circuit in the IC bare chip 20 generates a signal as a feeding part. Based on the signal transmission characteristics of the first conductive structure 211, the signal generated by the signal processing circuit is transmitted to the radiation part through the first conductive structure 211, and the radiation function is realized through the radiation part F.

[0062] In one implementation, the first conductive structure 211 is a metallized via.

[0063] Specifically, the metallized via has a signal transmission function based on metal characteristics, providing a signal transmission space for the signal between the signal processing circuit / signal connecting portion 22 and the radiating portion F, thereby achieving electrical connection between the IC bare chip and the radiating portion F.

[0064] The metallized via penetrates the silicon layer structure 21 and can be arranged vertically to the radiation part F, with one end connected to the signal processing circuit / signal connection part 22 and the other end connected to the radiation part F, thereby simplifying the hardware cost of the first conductive structure 211 .

[0065] In another implementation, the first conductive structure 211 is a metal piece.

[0066] Specifically, the metal part has a signal transmission function based on metal properties, providing a signal transmission space for the signal between the signal processing circuit / signal connecting part 22 and the radiation part F, thereby realizing the electrical connection between the IC bare chip and the radiation part F.

[0067] The metal piece penetrates the silicon layer structure 21 and can be arranged vertically to the radiation part F, with one end connected to the signal processing circuit / signal connection part 22 and the other end connected to the radiation part F, thereby simplifying the hardware cost of the first conductive structure 211 .

[0068] Figure 4 for Figure 2 Another structural schematic diagram of the radio frequency device is shown, in this embodiment, the packaging structure includes at least one second conductive structure 23 arranged outside the IC bare chip, and the radiation part F is electrically connected to the IC bare chip 20 through the second conductive structure 23. The number of the second conductive structures 23 corresponds to the number of radiation units included in the radiation part F, and each radiation unit is electrically connected to the IC bare chip through a first conductive structure 211.

[0069] like Figure 4 As shown, the IC die 20 has a second surface 20B opposite to the first surface 20A, wherein the second surface 20B includes at least one signal connection portion 22 for connecting to a signal processing circuit in the IC die 20; wherein the signal connection portion 22 may be a metal connection component (e.g., solder joint) of a pin or chip. The radiation portion F is electrically connected to the signal connection portion 22 located on the second surface 20B through the second conductive structure 23, without changing the internal structure of the IC die 20, and thus reducing the hardware design cost.

[0070] Specifically, one end of the second conductive structure 23 is connected to the signal connecting portion 22 , and the other end is connected to the metal frame 10 , so that the radiation portion F is electrically connected to the IC bare chip 20 through the second conductive structure 23 .

[0071] Further, such as Figure 5 As shown, the metal frame 10 includes a metal portion 12 and a metal frame 11 surrounding the metal portion 12 , and the metal portion 12 is electrically isolated from the metal frame 11 ; the IC bare chip 20 is mounted on the metal portion 12 , and the metal portion 12 serves as the radiation portion F.

[0072] exist Figure 5 In the structure shown, the portion of the metal frame 10 corresponding to the mounting position of the IC bare chip 20 is the metal portion.

[0073] Among them, the metal frame 11 is not necessarily a connected metal frame, and can include multiple discontinuous metal parts. The above discontinuous metal parts can be packaged together by external packaging materials. These discontinuous metal parts can be used as signal pins to facilitate the connection of the signal connection parts on the IC bare chip to these signal pins.

[0074] The other end of the second conductive structure 23 is connected to the metal frame 11 and then connected to the middle metal part 12 (i.e., the radiation part F) through conductive structures such as bonding wires or metal parts; of course, in some embodiments, the other end of the second conductive structure 23 can also be directly connected to the middle metal part 12 (i.e., the radiation part F), which can be adjusted according to specific circumstances and is not limited here.

[0075] In one implementation, the second conductive structure 23 is a metal member or a bonding wire, etc. The bonding wire can be a metal wire such as a gold wire, a silver wire or a copper wire.

[0076] As a supplementary explanation, in actual use, the upper surface of the IC bare chip 20 is not only provided with a signal connection part for connecting the antenna unit, but also may include a connection part for connecting other external electrical devices. Such a connection part can be connected to the nearby metal frame 11 through a bonding wire, and then connected to the external device through the pins around the metal frame 11.

[0077] When the IC bare chip is electrically connected to other components except the radiation part F, the IC bare chip is connected to the metal frame 11 through bonding wires, and then connected to external devices (such as a PCB board) through pins around the metal frame 11. Figure 6 FIG. 1 is a schematic diagram of the structure of a semiconductor device 1000 provided in an embodiment of the present application. Figure 6 As shown, the semiconductor device 1000 includes a radio frequency device 300 and a PCB board 200 , and the radio frequency device 300 is mounted on the PCB board 200 .

[0078] exist Figure 6 In the structure shown, the PCB board 200 can not only serve as a carrier of the radio frequency device 300, but also serve as a carrier of other circuits, thereby forming an integrated circuit.

[0079] The semiconductor device 1000 can be applied to radar, and the semiconductor device 1000 can be used to detect targets. For example, the antenna unit of the radio frequency device 300 is used as a transmitting antenna to transmit radio frequency signals for detecting targets; or the antenna unit of the radio frequency device 300 is used as a receiving antenna to receive echo signals generated by radio frequency signals reflected by targets.

[0080] The semiconductor device 1000 may be applied to smart devices. For example, the radio frequency device is a UWB technology and is used for ranging operations in smart home appliances or smart cars.

[0081] When the packaging structure 100 is installed on the PCB board 200, it is necessary to provide sufficient radiation space for the antenna unit of the radio frequency device to support signal transmission and prevent the PCB board 200 from blocking the signal transmission of the antenna unit.

[0082] The side of the package structure 100 that is away from the PCB is called the top, and the side that is adjacent to the PCB is called the bottom.

[0083] Figure 7 for Figure 6 Another structural schematic diagram of the semiconductor device 1000 is shown. Figure 7 As shown, the packaging structure 100 is mounted on the PCB board 200 , and the radiation portion F faces away from one side of the PCB board 200 .

[0084] exist Figure 7 In the structure shown, the top of the metal frame 10 has a first surface D1 and a second surface D2 opposite to each other, wherein the first surface D1 is adjacent to the PCB board 200, and the second surface D2 is away from the PCB board 200. The IC bare chip 20 is disposed on the first surface D1, and the radiating portion F is a portion of metal corresponding to the installation position of the IC bare chip 10.

[0085] Since the radiation portion F is located at a side adjacent to the PCB board 200 , based on the radiation function of the antenna, it can be known that the radiation portion F radiates signals toward a side away from the PCB board 200 .

[0086] Furthermore, since the radiation part F radiates signals toward a side away from the PCB board 200, the PCB board 200 will not have any impact on the transmission space of the radiation part F. Therefore, the PCB board 200 does not need to make adaptive changes to the radiation space of the antenna unit.

[0087] Figure 8 for Figure 6 FIG. 1 is another schematic diagram of the structure of the semiconductor device 1000. Figure 8 As shown, the packaging structure 100 is mounted on the PCB board 200 , and the radiation portion F faces one side of the PCB board 200 .

[0088] exist Figure 8 In the structure shown, the bottom of the package structure 100 has a third surface D3 and a fourth surface D4 that are opposite to each other, wherein the third surface D3 is adjacent to the PCB board 200, and the fourth surface D4 is away from the PCB board 200. The IC die 20 is disposed on the fourth surface D4, and the radiation portion F is a portion of metal corresponding to the mounting position of the IC die 10.

[0089] Since the radiation portion F is located at a side away from the PCB board 200 , based on the radiation function of the antenna, it can be known that the radiation portion F radiates signals toward the side of the PCB board 200 .

[0090] Furthermore, since the radiation part F radiates signals toward one side of the PCB board 200, the PCB board 200 will block the transmission space of the radiation part F. Therefore, the PCB board 200 needs to be adaptively changed with respect to the radiation space of the antenna unit.

[0091] In an exemplary embodiment, a metal part 201 or a through hole 202 is arranged and removed at a position corresponding to the radiation part F on the PCB board 200, so that the signal transmitted by the radiation part F will not be blocked, and a signal transmission space can be provided for normal signal transmission.

[0092] Since the PCB board is arranged by spacing the metal layer and the dielectric layer, removing the metal part refers to removing the metal layer at the corresponding position.

[0093] The through hole 202 may be manufactured by a subtractive process, such as at least one of milling, grinding, drilling or stamping, or by an additive process, such as at least one of injection molding or 3D printing.

[0094] The semiconductor device provided by the embodiment of the present application uses the bare IC chip as the feed part of the antenna unit, and uses the part of the metal frame corresponding to the installation position of the bare IC chip as the radiation part of the antenna unit, thereby shortening the signal transmission distance between the feed part and the radiation part of the antenna unit and improving the integration of the antenna unit. In addition, the part of the metal frame originally used to install the bare IC chip is used as the radiation part, which facilitates the miniaturization of the antenna structure. In addition, according to the different deployment positions of the radiation part, the structure of the PCB board is adaptively changed to ensure that the antenna unit has sufficient radiation space and the radiation performance of the antenna unit.

[0095] In the description of the present invention, it should be noted that the terms "upper", "lower", "one side", "the other side", "one end", "the other end", "side", "relative", "four corners", "periphery", "'mouth'-shaped structure" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the 'present' utility model and simplifying the description, and do not indicate or imply that the structure referred to has a specific orientation, is constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0096] In the description of the embodiments of the present utility model, unless otherwise clearly specified and limited, the terms "connection", "direct connection", "indirect connection", "fixed connection", "installation", and "assembly" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; the terms "installation", "connection", and "fixed connection" can be a direct connection, or an indirect connection through an intermediate medium, or the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0097] Although the implementation methods disclosed in the utility model are as above, the above contents are only implementation methods adopted to facilitate the understanding of the utility model, and are not used to limit the utility model. Any technician in the field to which the utility model belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the utility model, but the scope of patent protection of the utility model shall still be defined by the attached claims.

Claims

1. A radio frequency device, characterized in that: It includes a packaging structure and an antenna unit, wherein the packaging structure includes a metal frame and an IC bare chip arranged on the metal frame, wherein a portion of the metal frame corresponding to the installation position of the IC bare chip serves as a radiating part of the antenna unit, and the radiating part is also electrically connected to the IC bare chip for signal transmission.

2. The radio frequency device according to claim 1, characterized in that: The IC bare chip has a first surface, wherein the first surface at least includes a silicon layer structure, and the first surface is attached to the radiation portion.

3. The radio frequency device according to claim 2, characterized in that: It also includes a first conductive structure, which is disposed in the IC bare chip, one end of the first conductive structure is connected to the IC bare chip, and the other end of the first conductive structure passes through the silicon layer structure and is connected to the radiation part.

4. The radio frequency device according to claim 3, characterized in that: The IC bare chip also has a second surface opposite to the first surface, and the second surface has a signal connection part for connecting the antenna unit; the first conductive structure runs through the IC bare chip, and one end of the first conductive structure is connected to the signal connection part, and the other end passes through the silicon layer structure and is connected to the radiation part.

5. The radio frequency device according to claim 3 or 4, characterized in that: The first conductive structure is a metallized via or a metal part.

6. The radio frequency device according to claim 2, characterized in that: The IC bare chip also has a second surface opposite to the first surface, wherein the second surface has a signal connection portion for connecting the antenna unit; The radio frequency device further includes a second conductive structure, wherein one end of the second conductive structure is connected to the signal connection portion, and the other end of the second conductive structure is connected to the metal frame, so that the radiation portion is electrically connected to the IC bare chip through the second conductive structure.

7. The radio frequency device according to claim 6, characterized in that: The second conductive structure is a metal member or a bonding wire.

8. The radio frequency device according to any one of claims 1 to 4 or any one of claims 6 to 7, characterized in that: The metal frame includes a metal part and a metal frame surrounding the metal part, the metal part is electrically isolated from the metal frame, the IC bare chip is mounted on the metal part, and the metal part serves as the radiation part.

9. The radio frequency device according to claim 1, characterized in that: The packaging structure includes a plastic packaging material for encapsulating the metal frame and the IC bare chip.

10. A semiconductor device, characterized in that: The invention comprises a radio frequency device and a PCB board, wherein the radio frequency device is installed on the PCB board, wherein the radio frequency device adopts the radio frequency device according to any one of claims 1 to 9.

11. The semiconductor device according to claim 10, wherein: The radio frequency device is mounted on the PCB board, and the radiating portion faces away from the side of the PCB board, and the radiating portion radiates signals toward the side away from the PCB board.

12. The semiconductor device according to claim 10, wherein: The radio frequency device is mounted on the PCB board, and the radiating part faces one side of the PCB board, and the radiating part radiates signals toward the one side of the PCB board.

13. The semiconductor device according to claim 12, wherein: A metal portion is removed at a position on the PCB board corresponding to the radiation portion to form a signal transmission space.

14. The semiconductor device according to claim 12, wherein: A through hole is arranged on the PCB board at a position corresponding to the radiation part to form a signal transmission space.