Base assembly and substrate processing device
By designing a base assembly with an insulated intermediate ring and a replaceable cover ring in the substrate processing device, the problem of partial discharge of the substrate edge is solved, effective deposition and deposition quality improvement of the substrate edge is achieved, and the service life of the base assembly is extended.
Patent Information
- Application Number
- CN202420685939.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-03
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2034-04-03
AI Technical Summary
During plasma processing, local discharge is prone to occur at the edge of the substrate, which affects the deposition effect and reduces the utilization rate of the edge of the substrate.
A base assembly is designed, including a central area, edge area, an insulating intermediate ring and a cover ring. The intermediate ring is located below the edge of the substrate to reduce the probability of discharge. The cover ring can be replaced after multiple processes, and the edge of the substrate is covered by the inner The portion, the outer cover portion and the shielding portion are formed to ensure that the gap is closed and the entry of the reaction gas is reduced.
Effectively use the substrate edge to deposit material layers, reduce the probability of plasma discharge, extend the service life of the base assembly, ensure the deposition mass and uniform flow of process gas, and avoid the flow of reaction gases in the gaps.
Smart Images
Figure CN222139266U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of plasma processing, in particular to the technical field of a base assembly and a substrate processing device. Background Art
[0002] In flat panel display devices (such as liquid crystal display, organic light emitting display, etc.), the display structure usually needs to use a plasma processing device to process the thin film transistor circuit, which is formed by a deposition step combined with an etching step on a semiconductor substrate or a glass substrate. In order to make large-size display screens or improve the efficiency of a single process cycle, the substrates used for flat panel displays are getting larger and larger, and the effective utilization area on the same substrate is also increasing.
[0003] In the process of processing substrates, the plasma enhanced chemical vapor deposition (PECVD) process is used to perform the deposition steps of some film layers. In this process, the precursor gas or gas mixture is input into the gas distribution plate in the reaction chamber and then evenly enters the top of the substrate. The gas is excited into plasma by the electrodes on both sides of the substrate to form a material layer on the surface of the substrate.
[0004] In PECVD equipment, the substrate area used can usually reach more than 4 square meters. The substrate is placed on a base mainly made of metal to perform process processing. Local discharge is prone to occur at the edge of the substrate, affecting the deposition effect at the edge of the substrate. Utility Model Content
[0005] In order to solve the technical problem that the edge of the substrate is affected by partial discharge while ensuring the utilization rate of the edge of the substrate, the utility model provides a base assembly for performing a deposition process on the surface of the substrate, comprising:
[0006] A body, the upper surface of which includes a central region and an edge region surrounding and lower than the central region;
[0007] An intermediate ring made of insulating material, which is disposed on the edge region, wherein the upper surface of the intermediate ring includes an inner region close to the central region and an outer region surrounding and lower than the inner region;
[0008] a cover ring comprising an inner cover portion disposed on the outer region and an outer cover portion disposed on the edge region; and,
[0009] The outer edge of the substrate exceeds the central area and is located above the inner area.
[0010] Optionally, the covering ring further includes a shielding portion extending from the outer covering portion to outside the main body.
[0011] Optionally, a lower surface of the shielding portion is lower than the edge area.
[0012] Optionally, the upper surfaces of the inner covering portion, the outer covering portion and the shielding portion are at the same surface height as the inner area.
[0013] Optionally, a surface height of the edge region in contact with the outer cover portion is lower than a surface height of the edge region in contact with the intermediate ring.
[0014] Optionally, the area of the edge region is 5%-20% of the area of the central region.
[0015] Optionally, the center of gravity of the cover ring is located at the outer cover portion.
[0016] Optionally, the intermediate ring is composed of multiple segments along the circumferential direction.
[0017] Optionally, the material of the intermediate ring includes ceramics; and the material of the covering ring includes metal with a plated surface.
[0018] Optionally, an area of the inner region outside the substrate is greater than 50% of an area of the inner region.
[0019] Furthermore, the utility model also provides a substrate processing device, comprising:
[0020] Processing chamber;
[0021] A gas shower head is located above the interior of the processing chamber, and a radio frequency source is electrically connected to the gas shower head;
[0022] A susceptor assembly as described in any one of the above items is arranged at a lower portion of the interior of the processing chamber opposite to the gas shower head.
[0023] Optionally, the cover ring further includes a shielding portion extending from the outer cover portion to outside the body, and the substrate processing device further includes:
[0024] A film transfer port, which is arranged on the inner wall of the processing chamber;
[0025] A ring support is arranged on the inner side wall of the processing chamber which is higher than the plane where the film transmission port is located, and the ring support is located below the shielding part.
[0026] Optionally, the body can be raised and lowered between a process position and a film transfer position, and when the body is located at the film transfer position, the cover ring can be separated from the base assembly and lifted up by the ring support.
[0027] Optionally, a lifting pin is provided in the body.
[0028] At least one of the above technical solutions has the following advantages or beneficial effects: the upper edge surface of the substrate is exposed to the plasma environment, and the deposition material layer can be effectively utilized, and the lower edge of the substrate is supported by an intermediate ring of insulating material, which reduces the probability of the plasma region discharging toward the base. In addition, during the process, the outer side of the intermediate ring and the outer side of the base are shielded by the covering ring. Even after multiple plasma treatment processes, only the covering ring can be replaced, and the base body can be recycled. In order to avoid the gap between the two rings from flowing into the reaction gas and generating local plasma, the two rings and the contact surface between the two rings and the base body are designed to increase the tortuosity of the gap in high and low areas to reduce the reaction gas entering the gap. In addition, the upper surface of the ring is designed to be located in the same plane and not higher than the substrate, which can ensure that the process gas flowing through the substrate is uniform and eddy-free. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0030] Figure 1 It is a side cross-sectional structural schematic diagram of the substrate processing device of the utility model;
[0031] Figure 2 for Figure 1 A schematic diagram of the partial enlarged structure of the base assembly at center A;
[0032] Figure 3 It is a schematic diagram of a partially enlarged structure of a base assembly of another embodiment. DETAILED DESCRIPTION
[0033] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0034] Figure 1The side cross-sectional structure diagram of the substrate processing device of the utility model. The substrate processing device includes a reaction space surrounded by a processing chamber 101, and a gas shower head 120 is arranged above the processing chamber 101 for inputting process gas. The base assembly 110 arranged at the bottom of the processing chamber 101 opposite to the gas shower head 120 is used to carry the substrate W. During the PECVD process, plasma is formed above the substrate W. Because the body 111 of the base assembly is mainly made of metal, and at the edge of the substrate W, if the upper surface of the body 111 is exposed to the plasma environment, local discharge is likely to occur in this area, and the generated electric sparks will damage the edge of the substrate W, so that the edge film quality of the substrate W is reduced, and it can no longer be used in the subsequent display period production. The usual practice is to cover the edge of the substrate W with a ring to protect the edge from damage by electric sparks, but the area at the edge of the substrate W cannot be film-formed by the PECVD process.
[0035] like Figure 2 Shown Figure 1 A schematic diagram of the partial enlarged structure of the base assembly at point A. The base assembly includes a body 111, whose upper surface includes a central area 1111 and an edge area 1112 surrounding and lower than the central area. The central area 1111 plays a major role in supporting the substrate W, and the edge area 1112 is an annular area, and its lower height is used to place and position other annular parts. The area and shape of the central area 1111 and the edge area 1112 mainly depend on the shape of the substrate W. In some embodiments, the area of the edge area 1112 is 5%-20% of the area of the central area 1111. The body 111 is mainly made of a conductor material. In order to increase the service life, an anti-corrosion coating can also be provided on the surface of the body 111.
[0036] An intermediate ring 112 made of insulating material is provided on the edge region 1112. The upper surface of the intermediate ring 112 includes an inner region 1121 close to the central region 1111 and an outer region 1122 surrounding and lower than the inner region 1121. The outer edge of the substrate W exceeds the central region 1111 and is located above the inner region 1121, so that the substrate W can be located above the gap between the inner side of the intermediate ring 112 and the body 111. The gap is used for thermal expansion during the reaction process. The substrate W covers the gap to prevent the reactants of the process from entering. In addition, the intermediate ring 112 is located between the plasma generation region and the body 111, which improves the insulation properties of the edge region of the substrate W and prevents discharge damage to the edge region of the substrate W. In some embodiments, the material of the intermediate ring 112 is alumina ceramic, or other ceramic materials, or other materials that can be insulated. In other embodiments, in order to reduce the difficulty of assembly, the intermediate ring 112 is composed of multiple sections along the circumferential direction.
[0037] A cover ring 113 is also provided on the outer side of the edge of the substrate W, which includes an inner cover 1131 provided on the outer region 1122 and an outer cover 1132 provided on the edge region 1112. When improving the deposition quality at the edge of the substrate W, the cost of reusing the components after multiple processes needs to be considered. The cover ring 113 can be replaced after being corroded by plasma, and the base 111 under the cover ring 113 can be reused without frequent replacement. However, the risk of reaction byproducts infiltrating into the gap between the cover ring 113 and other components needs to be considered when the cover ring 113 is provided. For example, byproducts enter through the gap between the side of the inner cover 1131 and the middle ring 112 to corrode the edge region 1112 or deposit and adhere. The inner cover 1131 contacts the outer region 1122 by gravity, blocking the path from the above gap to the edge region 1112. In this way, even if there is a gap between the cover ring 113 and the middle ring 112 in the horizontal direction to accommodate thermal expansion, it can also play a good sealing role. In some embodiments, in order to facilitate processing and improve shielding effect, the material of the covering ring 113 includes a metal with a coating on the surface, such as aluminum metal, with an aluminum oxide coating on the surface, and can be integrally processed into a ring shape.
[0038] In other embodiments, in order to ensure that during the process, after various components such as the intermediate ring 112 and the covering ring 113 are thermally expanded, the intermediate ring can still play a sufficient insulating role to protect the substrate W from being damaged by local discharge, the area of the inner region outside the substrate is greater than 50% of the total area of the inner region.
[0039] like Figure 3 A partial enlarged structural diagram of a base assembly 210 of another embodiment is shown. The difference from the above embodiment is that the cover ring 213, in addition to the inner cover 2131 and the outer cover 2132, also includes a shielding portion 2133 extending from the outer cover 2132 to the outside of the body 211. The shielding portion 2133 can prevent the process gas and by-products from above from directly corroding the outer wall of the body 211, further improving the degree of protection of the body 211. In some embodiments, the lower surface of the shielding portion 2133 is lower than the plane where the edge area 1112 is located, so that the inner side surface of the shielding portion 2133 blocks the horizontal gap between the outer cover 2132 and the body 211, preventing the process gas or by-products from entering through the gap. In some embodiments, in order to enhance the blocking effect on process gases and by-products, the lower surface area of the inner covering portion 2131 between the covering ring 213 and the middle ring 212 is greater than or equal to the area of the outer area 1122, and the center of the covering ring 213 is located on the outer covering portion 2132. In this way, even if thermal deformation occurs during the process, the inner covering portion 2131 will not warp up, and the weight of the shielding portion will not cause the covering ring 213 to break as a whole.
[0040] In other embodiments, the surface height of the edge area 1112 in contact with the outer covering portion 2132 is lower than the surface height of the edge area 1112 in contact with the middle ring 212, that is, the edge area 1112 forms a two-step shape. On the one hand, the contact surface of the covering ring 213 and the main body 211 is staggered with the contact surface of the middle ring 212 and the main body 211 to improve the barrier degree to the reaction gas and by-products; on the other hand, the outer covering portion 2132 has a thicker vertical dimension, which improves the overall mechanical strength of the covering ring 212 and avoids breakage caused by the weight difference between the inner covering portion 2131 and the shielding portion 2133.
[0041] In other embodiments, the upper surfaces of the inner covering portion 2131, the outer covering portion 2132 and the shielding portion 2133 are at the same surface height as the inner region 1121, so that the reaction gas can flow evenly at the edge of the substrate W without generating eddies, further improving the film forming quality at the edge of the substrate W.
[0042] like Figure 1 As shown, the utility model further provides a substrate processing device. The two sides of the gas shower head 120 are fixed on the upper cover 104 of the processing chamber 101, and in order to avoid the deformation of the center and edge of the large-sized gas shower head 120, the gas shower head 120 is assisted in fixing with screws 105 in the middle. A gas source 121 is connected to the space above the gas shower head for introducing the reaction gas. The RF source 130 can be electrically connected to the gas shower head 120 to ground the body 111 of the base assembly to achieve plasma excitation of the process gas above the substrate W. In addition, in order to reduce the discharge below the body 111, the lower side of the body 111 is electrically connected to the bottom wall of the processing chamber 101 through the grounding strip 116. At the same time, there is a gas extraction port 106 on the bottom wall for discharging reaction by-products and maintaining the gas pressure in the chamber.
[0043] A film transfer port 102 is provided on the side wall of the processing chamber 101, and a ring support 103 is provided above the plane where the film transfer port 102 is located. The ring support 103 is located below the shielding portion of the cover ring 113. The body 111 can be raised and lowered between the process position and the film transfer position by the actuator 115. When the body 111 is located at the process position, the body 111 rises and approaches the gas shower head 120, and the cover ring 113 contacts the body 111 and the intermediate ring 112 and rises to the process position together. When the body descends to the film transfer position, the cover ring 113 first contacts the ring support 103 and is lifted, and the body 111 is separated from the cover ring 113. At the same time, the lifting pins 114 provided in the body 111 are supported by the bottom wall of the processing chamber 101 to lift the substrate that has been processed and take it away from the robot arm extending from the film transfer port, or receive the substrate to be processed on the robot arm extending from the film transfer port.
[0044] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.
Claims
1. A susceptor assembly for performing a deposition process on a substrate surface, characterized in that: include: A body, the upper surface of which includes a central area and an edge area surrounding and lower than the central area; an intermediate ring of insulating material, which is arranged on the edge area, and the upper surface of the intermediate ring includes an inner area close to the central area and an outer area surrounding and lower than the inner area; a covering ring, which includes an inner covering portion arranged on the outer area and an outer covering portion arranged on the edge area; and, The outer edge of the substrate exceeds the central area and is located above the inner area.
2. The base assembly according to claim 1, characterized in that The covering ring further includes a shielding portion extending from the outer covering portion to outside the main body.
3. The base assembly according to claim 2, characterized in that The lower surface of the shielding portion is lower than the edge area.
4. The base assembly according to claim 2, characterized in that The upper surfaces of the inner covering portion, the outer covering portion and the shielding portion are located at the same surface height as the inner area.
5. The base assembly according to claim 1, wherein: The surface height of the edge region in contact with the outer cover is lower than the surface height of the edge region in contact with the intermediate ring.
6. The base assembly according to claim 1, wherein: The area of the edge region is 5%-20% of the area of the central region.
7. The base assembly according to claim 2, characterized in that The center of gravity of the cover ring is located on the outer cover.
8. The base assembly according to claim 1, wherein: The intermediate ring is composed of a plurality of sections along the circumferential direction.
9. The base assembly according to claim 1, wherein: The material of the intermediate ring includes ceramic; The material of the cover ring includes a metal with a plated layer on the surface.
10. The base assembly according to claim 1, wherein: The area of the inner region outside the substrate is greater than 50% of the area of the inner region.
11. A substrate processing device, characterized in that: include: Processing chamber; A gas shower head is located above the interior of the processing chamber, and a radio frequency source is electrically connected to the gas shower head; A susceptor assembly according to any one of claims 1 to 10, arranged at a lower portion of the processing chamber opposite to the gas shower head.
12. The substrate processing apparatus according to claim 11, wherein: The cover ring further includes a shielding portion extending from the outer cover portion to the outside of the body, and the substrate processing device further includes: a film transfer port, which is arranged on the inner side wall of the processing chamber; A ring support is arranged on the inner side wall of the processing chamber which is higher than the plane where the film transmission port is located, and the ring support is located below the shielding part.
13. The substrate processing apparatus according to claim 12, wherein: The body can be raised and lowered between a process position and a film transfer position. When the body is located at the film transfer position, the cover ring can be separated from the base assembly and lifted up by the ring support.
14. The substrate processing apparatus according to claim 13, wherein: A lifting pin is arranged in the main body.