Welding condition detection tool for COS chip
By designing the welding condition detection tooling of COS chips, using microscope and ultrasonic cleaning technologies, the welding condition of the chip is directly analyzed, solving the problem of expensive equipment dependence, and achieving efficient and low-cost welding condition detection.
Patent Information
- Application Number
- CN202420398837.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-01
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2034-03-01
AI Technical Summary
In the current semiconductor chip packaging process, methods to confirm whether the chip inverted eutectic soldering is good and affect the changes in chip performance are expensive and rely on imported equipment, resulting in high analysis costs.
A COS chip welding condition detection tool was designed, including a detection table, a microscope, an air pump, a shooting mechanism and an ultrasonic cleaner. The welding surface was visually inspected directly through the microscope, combined with BOE solution etching and ultrasonic cleaning, and analyzed the welding condition of the chip. Avoid structural features affecting imaging problems.
It realizes efficient analysis of chip welding conditions without using special failure analysis equipment, reduces analysis costs, avoids imaging problems such as ultrasonic detection or radiation detection, and is easy to operate.
Smart Images

Figure CN222144911U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor chips, in particular to a welding condition detection tool for a COS chip. Background Art
[0002] In the process of semiconductor chip packaging quality control, whether the chip flip-chip eutectic welding is good and whether it can dissipate heat normally is one of the key factors in the service life of the COS chip after power is turned on. Therefore, how to confirm whether the chip flip-chip eutectic welding is good and whether it affects the chip performance change is an important link in failure analysis. The current semiconductor packaging market mostly uses imported equipment for analysis, which is expensive. The main technical problem solved by this patent is to provide a semiconductor laser chip failure analysis method, which does not require the use of special failure analysis equipment for analysis, can well analyze the chip welding condition, and reduces the analysis cost. Therefore, we need to propose a COS chip welding condition detection tooling. Utility Model Content
[0003] The purpose of the utility model is to provide a COS chip welding condition detection tool, which does not need to use special failure analysis equipment for analysis, can well analyze the chip welding condition, reduce the analysis cost, and solve the problems raised in the above background technology.
[0004] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0005] A COS chip welding condition detection tool comprises a detection platform for detecting the welding condition of the COS chip, wherein four groups of supporting legs are symmetrically fixedly installed on the bottom of the detection platform, a first support frame is fixedly installed on one side of the top of the detection platform, an electric push rod is fixedly installed on the top of the first support frame, the bottom end of the electric push rod piston rod penetrates the first support frame and is fixedly connected to a suction cup, the bottom of the suction cup is fixedly connected to a rubber suction nozzle, the detection platform is also provided with a shooting mechanism on one side of the first support frame, the detection platform is fixedly installed with a second support frame on one side of the shooting mechanism, an air pipe is provided on the top of the second support frame, the bottom end of the air pipe penetrates the second support frame and is fixedly connected to an air nozzle, and a microscope is provided on one side of the air nozzle of the detection platform.
[0006] Preferably, a vacuum pump is fixedly installed on the top of the detection platform, and the vacuum end of the vacuum pump is fixedly connected to a hose, and one end of the hose is fixedly connected to the suction cup.
[0007] Preferably, a soaking cup is provided on the top of the detection table, and the soaking cup is located directly below the suction cup.
[0008] Preferably, a limit baffle is also closely connected to the outer wall of the soaking cup, and the limit baffle is fixedly installed on the top of the detection platform.
[0009] Preferably, a first cleaning box is provided on the surface of the detection table, and the first cleaning box is located between the soaking cup and the shooting mechanism.
[0010] Preferably, the photographing mechanism comprises a photographing device body, a camera is arranged at the inner top of the photographing device body, and a display is arranged at the top of one side of the photographing device body.
[0011] Preferably, a second cleaning box is further provided on the surface of the detection platform, and the second cleaning box is located directly below the second supporting frame.
[0012] Preferably, an ultrasonic cleaner is also provided on the top of the detection platform, and the ultrasonic cleaner is located between the shooting mechanism and the second cleaning box.
[0013] Compared with the prior art, the beneficial effects of the utility model are:
[0014] Currently, the packaging industry mostly uses ultrasonic detection equipment and X-ray detection equipment to analyze whether the chip welding condition is good. Since most of such analysis equipment on the market is imported and expensive, this new detection tooling can fully analyze the COS chip patch condition and directly visually inspect the welding surface, avoiding the imaging problems of ultrasonic detection or X-ray detection due to the structural characteristics of the product. It is easy to operate and reduces the cost of failure analysis. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a structural schematic diagram of the front side of the utility model;
[0016] Figure 2 It is a structural schematic diagram of the rear side of the utility model;
[0017] Figure 3 This is a schematic diagram of the structure of the COS chip of the utility model;
[0018] Figure 4 It is a longitudinal section schematic diagram of the COS sample of the present invention.
[0019] In the figure: 1. test table; 2. support leg; 3. first support frame; 4. electric push rod; 5. suction cup; 6. rubber suction nozzle; 7. shooting mechanism; 71. camera body; 72. camera; 73. display; 8. second support frame; 9. air pipe; 10. air nozzle; 11. microscope; 12. vacuum pump; 13. hose; 14. immersion cup; 15. limit baffle; 16. first cleaning box; 17. second cleaning box; 18. ultrasonic cleaner; 19. chip N-side electrode; 20. semiconductor material; 21. chip P-side electrode; 22. gold-tin solder; 23. AIN ceramic substrate. DETAILED DESCRIPTION
[0020] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0021] See also Figure 1-4 , the utility model provides a technical solution:
[0022] A COS chip welding condition detection tool comprises a detection table 1, four groups of support legs 2 are symmetrically fixedly installed at the bottom of the detection table 1, a first support frame 3 is fixedly installed on one side of the top of the detection table 1, an electric push rod 4 is fixedly installed on the top of the first support frame 3, the bottom end of the piston rod of the electric push rod 4 passes through the first support frame 3 and is fixedly connected to a suction cup 5, and the bottom of the suction cup 5 is fixedly connected to a plurality of groups of rubber suction nozzles 6, the detection table 1 is located on one side of the first support frame 3 and is also provided with a shooting mechanism 7 for shooting COS chips, the detection table 1 is located on one side of the shooting mechanism 7 and is fixedly installed with a second support frame 8, and the top of the second support frame 8 The bottom of the air pipe 9 is provided with an air pipe 9, the bottom end of the air pipe 9 passes through the second support frame 8 and is fixedly connected with an air nozzle 10, and one end of the air pipe 9 is connected to an external nitrogen generating device, so that the air nozzle 10 can spray nitrogen through the air pipe 9, and the surface of the chip is dried by nitrogen. The inspection table 1 is located on one side of the air nozzle 10 and is provided with a microscope 11 for checking the welding condition of the COS chip. The microscope 11 is a SEM high-power microscope. The chip is placed under the microscope 11 to visually check whether there are abnormal phenomena such as collapse on the surface of the chip P-side electrode 21, and for areas or doubtful points on the surface that are not level, the probe tip can be used to confirm the welding condition;
[0023] A technical solution adopted by this patent is: removing the semiconductor material of the semiconductor laser chip, cleaning and preparing samples, checking the welding condition of the chip P surface electrode 21, and incidentally, an analysis method for whether there is residual SIN in the semiconductor epitaxial window. The method also includes: removing the semiconductor material of the semiconductor laser chip (mechanically pushing off the chip semiconductor material), scanning the microscope 11 for energy spectrum component analysis, checking the surface composition of the chip P surface electrode 21 that was once closely connected to the epitaxial layer surface, comparing the sample analysis data of normal COS, and drawing an analysis conclusion;
[0024] An air pump 12 is fixedly installed on the top of the testing table 1. The air pump end of the air pump 12 is fixedly connected with a hose 13. One end of the hose 13 is fixedly connected with the suction cup 5. The air pump 12 extracts the air inside the suction cup 5 through the hose 13, so that a negative pressure is formed inside the suction cup 5. Then, a plurality of rubber suction nozzles 6 are used to adsorb the COS chip, and the COS chip is adsorbed to the bottom of the suction cup 5.
[0025] A soaking cup 14 is provided on the top of the test table 1. The soaking cup 14 is located directly below the suction cup 5. The piston rod of the electric push rod 4 is extended and retracted to drive the suction cup 5 downward, and the suction cup 5 drives the COS chip downward, so that the COS chip enters the interior of the soaking cup 14. The semiconductor material 20 of the chip on the COS and the over-plated electrode material titanium (Ti) of the chip P-surface electrode 21 are etched away by BOE (Buffered oxide Etch, solution composition ratio: NH4F:HF=10:1) buffered oxide etching solution, so that the semiconductor material part of the chip automatically falls off. Due to the particularity of the surface material of the electrode layer of the high-power laser chip, the BOE solution can be used to quickly and flexibly prepare samples, and quickly analyze and obtain the welding status of the chip P-surface electrode 21;
[0026] The outer wall of the soaking cup 14 is also fitted with a limit baffle 15, which is fixedly mounted on the top of the testing platform 1. The limit baffle 15 can limit the soaking cup 14, so that the electric push rod 4 can always drive the suction cup 5 and the COS chip into the soaking cup 14;
[0027] A first cleaning box 16 is provided on the surface of the detection platform 1, and the first cleaning box 16 is located between the soaking cup 14 and the shooting mechanism 7. Clean water is provided inside the first cleaning box 16 for cleaning the surface of the chip P-side electrode 21;
[0028] The photographing mechanism 7 includes a photographing instrument body 71, a camera 72 is arranged on the inner top of the photographing instrument body 71, and a display 73 is arranged on the top of one side of the photographing instrument body 71. After cleaning the surface of the P-side electrode, the welding condition of the chip P-side electrode 21 is preliminarily visually inspected, and then the chip P-side electrode 21 is photographed by the camera 72, and the photographed photos are saved;
[0029] An ultrasonic cleaner 18 is also provided on the top of the test bench 1, and the ultrasonic cleaner 18 is located between the shooting mechanism 7 and the second cleaning box 17. After the shooting is completed, the ultrasonic cleaner 18 filled with pure alcohol is used to ultrasonically clean the COS after the chip semiconductor material is peeled off for 5-8 minutes;
[0030] A second cleaning box 17 is also provided on the surface of the detection platform 1. The second cleaning box 17 is located directly below the second support frame 8. DI water is provided inside the second cleaning box 17. After the chip is cleaned by ultrasonic wave, it is rinsed with DI water.
[0031] Working principle: When the utility model is used, the air pump 12 extracts the air inside the suction cup 5 through the hose 13, so that the inside of the suction cup 5 forms a negative pressure, and then a plurality of rubber suction nozzles 6 are used to adsorb the COS chip, and the COS chip is adsorbed to the bottom of the suction cup 5. The piston rod of the electric push rod 4 is extended and retracted to drive the suction cup 5 to move downward, and the suction cup 5 drives the COS chip to move downward, so that the COS chip enters the inside of the soaking cup 14, and then the semiconductor material 20 of the chip on the COS and the over-plated electrode material titanium (Ti) of the chip P-side electrode 21 are etched away by BOE (Buffered oxide Etch, solution composition ratio: NH4F:HF=10:1) buffered oxide etching solution. , So that the semiconductor material part of the chip automatically falls off, leaving only the like Figure 4 As shown, the chip P-side electrode 21, the gold-tin solder 22 and the AIN ceramic substrate 23 (seen from the cross section), and then use the clean water in the first cleaning box 16 to clean the surface of the P-side electrode, preliminarily visually inspect the welding condition of the chip P-side electrode 21, and save the photo through the shooting mechanism 7, then use the ultrasonic cleaner 18 filled with pure alcohol to ultrasonically clean the chip after the chip semiconductor material 20 is peeled off for 5-8 minutes, after the ultrasonic cleaning is completed, use the DI water in the second cleaning box 17 to clean the chip, after the cleaning is completed, use nitrogen to blow dry the surface, and then put the chip under the microscope 11 to visually inspect whether there is any abnormal phenomenon such as collapse on the surface of the chip P-side electrode 21. For the uneven surface area or doubtful points, the probe tip can be used to confirm the welding condition, and then continue to etch the electrode with BOE, and clean it with 114 solution (the volume ratio of the 114 solution is H 2 O 2 :H 2 SO 4 :H 2 O=1:1:4), until only the outer surface electrode material of the chip P surface electrode 21 is welded on the gold-tin solder 22, and then cleaned with an ultrasonic cleaner 18, visually inspect the welding condition of the chip P surface electrode 21 and the gold-tin solder 22 to see if there are cold solder joints, holes, and other abnormalities, compare and analyze the pictures during the process, and then judge the difference from normal COS welding, summarize and draw preliminary analysis conclusions.
[0032] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A COS chip welding condition detection tool, characterized in that: include: A testing platform (1), wherein a first support frame (3) is fixedly mounted on one side of the top of the testing platform (1), an electric push rod (4) is fixedly mounted on the top of the first support frame (3), the bottom end of the piston rod of the electric push rod (4) passes through the first support frame (3) and is fixedly connected to a suction cup (5), and the bottom of the suction cup (5) is fixedly connected to a rubber suction nozzle (6); A photographing mechanism (7) disposed on the detection platform (1) at one side of the first support frame (3) and used for photographing the COS chip; A second support frame (8) is fixedly mounted on the detection platform (1) at one side of the shooting mechanism (7), an air pipe (9) is arranged on the top of the second support frame (8), and the bottom end of the air pipe (9) passes through the second support frame (8) and is fixedly connected to an air nozzle (10); A microscope (11) is arranged on the inspection platform (1) at one side of the air nozzle (10) and is used to check the welding status of the COS chip.
2. The COS chip welding condition detection tool according to claim 1, characterized in that: An air pump (12) is fixedly installed on the top of the detection platform (1), and a hose (13) is fixedly connected to the air suction end of the air pump (12), and one end of the hose (13) is fixedly connected to the suction cup (5).
3. The COS chip welding condition detection tool according to claim 1, characterized in that: A soaking cup (14) is arranged on the top of the detection platform (1), and the soaking cup (14) is located directly below the suction cup (5).
4. The COS chip welding condition detection tool according to claim 3, characterized in that: The outer wall of the soaking cup (14) is also fitted with a limit baffle (15), and the limit baffle (15) is fixedly mounted on the top of the detection platform (1).
5. The COS chip welding condition detection tool according to claim 4, characterized in that: A first cleaning box (16) is provided on the surface of the detection platform (1), and the first cleaning box (16) is located between the soaking cup (14) and the shooting mechanism (7).
6. The COS chip welding condition detection tool according to claim 1, characterized in that: The photographing mechanism (7) comprises a photographing instrument body (71), a camera (72) is arranged on the inner top of the photographing instrument body (71), and a display (73) is arranged on the top of one side of the photographing instrument body (71).
7. The COS chip welding condition detection tool according to claim 1, characterized in that: A second cleaning box (17) is also provided on the surface of the detection platform (1), and the second cleaning box (17) is located directly below the second support frame (8).
8. The COS chip welding condition detection tool according to claim 7, characterized in that: An ultrasonic cleaner (18) is also provided on the top of the detection platform (1), and the ultrasonic cleaner (18) is located between the shooting mechanism (7) and the second cleaning box (17).
