Semiconductor material preparation diffusion furnace
By introducing spiral electric heating wire, cooling cylinder and purification box into the semiconductor material preparation diffusion furnace, the problem of traditional diffusion furnace failure to purify waste gas is solved, and effective purification of waste gas and improved stability and convenience of equipment is achieved. .
Patent Information
- Application Number
- CN202420029984.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-05
- Publication Date
- 2024-12-13
- Estimated Expiration
- 2034-01-05
AI Technical Summary
Traditional semiconductor material preparation diffusion furnaces fail to effectively purify the exhaust gas generated during high-temperature reactions, resulting in a potential threat to the external environment and human health.
A diffusion furnace for preparing semiconductor materials is designed, including a spiral electric heating wire, air intake pipe, L-shaped support cylinder, cooling cylinder and purification box. After cooling, the exhaust gas is filtered layer by layer in the purification filter in the purification box to ensure discharge. The gas does not affect the external environment.
It effectively purifies the exhaust gas generated in the furnace body, ensures the external environment and human health, improves the stability and performance of the equipment, and enhances the convenience and practicality of the equipment through outriggers and handles.
Smart Images
Figure CN222165674U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductor production, in particular to a diffusion furnace for preparing semiconductor materials. Background Art
[0002] The diffusion furnace for preparing semiconductor materials is one of the important process equipment in the front process of semiconductor production line. It is used for diffusion, oxidation, annealing, alloying and sintering in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices and optical fibers. The diffusion furnace for preparing semiconductor materials is composed of a control system, a boat in and out system, a furnace heating system and a gas control system. There are two types of diffusion furnaces for preparing semiconductor materials: vertical diffusion furnace and horizontal diffusion furnace. The inter-wafer process parameters of the horizontal diffusion furnace are better than those of the vertical diffusion furnace.
[0003] During the preparation of semiconductor materials in a diffusion furnace, after high temperature and reaction with other gases, certain waste gas will be generated. However, traditional diffusion furnaces do not have the function of purifying waste gas. Waste gas is directly discharged out of the equipment, which affects the external environment and is not conducive to human work activities. Therefore, we propose a diffusion furnace for preparing semiconductor materials. Utility Model Content
[0004] In order to achieve the above-mentioned purpose, the utility model specifically adopts the following technical solutions:
[0005] A diffusion furnace for preparing semiconductor materials comprises a furnace body, the inner wall of which is provided with a spiral electric heating wire, the bottom surface of which is penetrated by an air inlet pipe, the tube wall of which is located on the inner wall of the furnace body and is fixedly connected with a plurality of nozzles, the inner wall of which is provided with a support cylinder with an L-shaped cross-section, the inner wall of which is fixedly connected with a plurality of placement plates, the inner wall of which is provided with a plurality of spaced air holes, a furnace cover is clamped on the upper side of the inner wall of the furnace body, an L-shaped air outlet pipe, a cooling cylinder and a purification box are fixedly connected to the right side of the furnace body from top to bottom, the inner wall of the cooling cylinder is provided with a cooling device with a variable covering range, the inner wall of the purification box is provided with a purification device with a variable covering range, during the use of the diffusion furnace, the exhaust gas generated in the furnace body is cooled by the cooling cylinder and then discharged into the purification box for purification and filtration, so that the gas discharged from the furnace body will not affect the external environment and human body.
[0006] Furthermore, the cooling device comprises a spiral guide plate arranged on the inner wall of the cooling cylinder, the top surface of the cooling cylinder is fixedly connected with a water inlet pipe, and the bottom surface of the cooling cylinder is fixedly connected with a water outlet pipe.
[0007] Furthermore, the purification device includes multiple movable frames arranged on the inner wall of the purification box, two limit strips are fixedly connected to the bottom surfaces of the multiple movable frames on the front and rear sides of the inner wall of the purification box, and the inner walls of the multiple movable frames are provided with purification filters.
[0008] Furthermore, the lower end of the air outlet pipe penetrates the top surface of the cooling cylinder and the lower side of its inner wall, extends to its bottom surface and is fixedly connected to the top surface of the purification box, the inner wall of the spiral guide plate is fixedly connected to the tube wall of the air outlet pipe, and the right sides of the multiple movable frames all penetrate the right side of the inner wall of the purification box and extend to its right side.
[0009] Furthermore, a plurality of legs are fixedly connected to the bottom surface of the furnace body.
[0010] Furthermore, a first handle is fixedly connected to the center of the top surface of the furnace cover.
[0011] Furthermore, a second handle is fixedly connected to the right side of each of the plurality of movable frames.
[0012] The beneficial effects of the utility model are as follows:
[0013] 1. When using the diffusion furnace, after placing the semiconductor material in the placement tray, seal the furnace body through the furnace cover, connect the air inlet pipe through the external device and deliver the reaction gas into the furnace body, turn on the electric heating wire to increase the temperature in the furnace body, so that the semiconductor material can fully react. In the process of preparing semiconductor materials, the exhaust gas generated in the furnace body is cooled by the flowing water in the cooling cylinder through the exhaust pipe and then discharged into the purification box. It is purified by the purification filter layer by layer before going out, thereby preventing the exhaust gas generated in the furnace from being directly discharged and affecting the external environment, ensuring the normal operation of the human body.
[0014] 2. Make the connection between the various devices in the equipment closer, ensure the stability and safety of the equipment, and improve the performance and effect of the equipment.
[0015] 3. The outriggers improve the stability of the equipment during use and ensure the normal use of the equipment. The first handle and the second handle improve the convenience of using the equipment and increase the practical performance of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a front cross-sectional structural schematic diagram of the utility model;
[0017] Figure 2 The utility model Figure 1 The A part of the structure diagram is shown in FIG.
[0018] Figure 3 It is a three-dimensional structural schematic diagram of the utility model;
[0019] Figure 4 It is a three-dimensional structural schematic diagram of the support tube of the utility model;
[0020] Figure 5 It is a three-dimensional structural schematic diagram of the movable frame of the utility model;
[0021] Figure numerals: 1. furnace body; 2. electric heating wire; 3. air inlet pipe; 4. nozzle; 5. support cylinder; 6. placement plate; 7. vent; 8. furnace cover; 9. air outlet pipe; 10. cooling cylinder; 11. purification box; 12. spiral guide vane; 13. water inlet pipe; 14. water outlet pipe; 15. movable frame; 16. limit strip; 17. purification filter; 18. support leg; 19. first handle; 20. second handle. DETAILED DESCRIPTION
[0022] In order to make the purpose, technical solution and advantages of the embodiments of the present utility model clearer, the technical solution in the embodiments of the present utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the present utility model.
[0023] The device's "front, back, left, right" viewing angles are Figure 1 The directions in the attached drawings are taken as reference.
[0024] like Figure 1-5As shown, a diffusion furnace for preparing semiconductor materials comprises a furnace body 1. The furnace body 1 is a special-shaped structure, and the upper side of its inner wall is two stepped annular support structures. The inner wall of the furnace body 1 is provided with a spiral electric heating wire 2. An air inlet pipe 3 runs through the bottom surface of the furnace body 1. The pipe wall of the air inlet pipe 3 is located on the inner wall of the furnace body 1 and is fixedly connected with a plurality of nozzles 4. The inner wall of the furnace body 1 is provided with a support tube 5 with an L-shaped cross section. The support tube 5 can be placed in the furnace body 1 through the annular support structure on the lower side of the inner wall of the furnace body 1. A plurality of placement plates 6 are fixedly connected to the inner wall of the support tube 5. A plurality of vent holes 7 arranged at intervals are opened on the inner wall of the support tube 5. A furnace cover 8 is clamped on the upper side of the inner wall of the furnace body 1. Through the annular support structure on the upper side of the inner wall of the furnace body 1, a plurality of placement plates 6 are fixedly connected to the inner wall of the support tube 5. A plurality of vent holes 7 arranged at intervals are opened on the inner wall of the support tube 5. The support structure can set the furnace cover on the furnace body 1. The right side of the furnace body 1 is fixedly connected with an L-shaped air outlet pipe 9, a cooling cylinder 10, and a purification box 11 from top to bottom in sequence. The inner wall of the cooling cylinder 10 is provided with a cooling device with a variable covering range. The inner wall of the purification box 11 is provided with a purification device with a variable covering range. The cooling device includes a spiral guide plate 12 arranged on the inner wall of the cooling cylinder 10. The spiral guide plate 12 is a guide plate with a spiral shape, which is mainly used for guiding and diverting liquid or gas. Its working principle is that through the spiral shape design, the fluid flows in the spiral direction under the action of the guide plate, thereby realizing the diversion and diversion of the fluid, which can effectively improve the fluid flow effect of the equipment. The top surface of the cooling cylinder 10 is fixedly connected with a water inlet pipe 13, and the bottom surface of the cooling cylinder 10 is fixedly connected with a water outlet pipe 14. The water inlet pipe 13 is connected to an external device so that the cooling cylinder 10 is connected to a water source. The cooling water flows from top to bottom at a uniform speed on the left and right sides of the spiral guide plate 12 and is discharged from the water outlet pipe 14, thereby ensuring the cooling effect of the exhaust gas. The purification device includes a plurality of movable frames 15 arranged on the inner wall of the purification box 11. The front and rear sides of the inner wall of the purification box 11 are located at the bottom surfaces of the plurality of movable frames 15. The inner walls of the plurality of movable frames 15 are all provided with purification filters 17. The purification filters 17 are mesh structures made of different materials and can be prepared according to different semiconductor materials. The waste gas generated is replaced to ensure the purification effect and performance of the equipment. When using the diffusion furnace, after the semiconductor material is placed in the placement tray 6, the furnace body 1 is sealed through the furnace cover 8, the air inlet pipe 3 is connected through an external device to transport the reaction gas into the furnace body 1, and the electric heating wire 2 is turned on to increase the temperature in the furnace body 1 so that the semiconductor material can fully react. In the process of preparing semiconductor materials, the waste gas generated in the furnace body 1 is discharged from the exhaust pipe 9 through the flowing water in the cooling cylinder 10 and then discharged into the purification box 11. It is purified layer by layer by the purification filter 17 and then goes out, thereby preventing the waste gas generated in the furnace from being directly discharged and affecting the external environment, thereby ensuring the normal operation of the human body.
[0025] like Figure 1-3As shown, in some embodiments, the lower end of the air outlet pipe 9 penetrates the top surface of the cooling cylinder 10 and the lower side of its inner wall, extends to its bottom surface and is fixedly connected to the top surface of the purification box 11, the inner wall of the spiral guide plate 12 is fixedly connected to the tube wall of the air outlet pipe 9, and the right sides of multiple movable frames 15 all penetrate the right side of the inner wall of the purification box 11 and extend to its right side, so that the connection between the various devices in the equipment is tighter, ensuring the stability and safety of the equipment, and improving the performance and effect of the equipment.
[0026] like Figure 1-5 As shown, in some embodiments, a plurality of legs 18 are fixedly connected to the bottom surface of the furnace body 1, a first handle 19 is fixedly connected to the center of the top surface of the furnace cover 8, and a second handle 20 is fixedly connected to the right side of each of the plurality of movable frames 15. The legs 18 improve the stability of the equipment during use and ensure the normal use of the equipment. The first handle 19 and the second handle 20 improve the convenience of use of the equipment and increase the practical performance of the equipment.
[0027] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A diffusion furnace for preparing semiconductor materials, comprising a furnace body (1), characterized in that: The inner wall of the furnace body (1) is provided with a spiral electric heating wire (2), the bottom surface of the furnace body (1) is penetrated by an air inlet pipe (3), the wall of the air inlet pipe (3) is located on the inner wall of the furnace body (1) and is fixedly connected with a plurality of nozzles (4), the inner wall of the furnace body (1) is provided with a support tube (5) with an L-shaped cross section, the inner wall of the support tube (5) is fixedly connected with a plurality of placement plates (6), the inner wall of the support tube (5) is provided with a plurality of vent holes (7) arranged at intervals, the upper side of the inner wall of the furnace body (1) is clamped with a furnace cover (8), and the right side of the furnace body (1) is fixedly connected with an L-shaped air outlet pipe (9), a cooling tube (10), and a purification box (11) in sequence from top to bottom, the inner wall of the cooling tube (10) is provided with a cooling device with a variable covering range, and the inner wall of the purification box (11) is provided with a purification device with a variable covering range.
2. A semiconductor material preparation diffusion furnace according to claim 1, characterized in that: The cooling device comprises a spiral guide plate (12) arranged on the inner wall of a cooling cylinder (10); the top surface of the cooling cylinder (10) is fixedly connected to a water inlet pipe (13); and the bottom surface of the cooling cylinder (10) is fixedly connected to a water outlet pipe (14).
3. A semiconductor material preparation diffusion furnace according to claim 2, characterized in that: The purification device comprises a plurality of movable frames (15) arranged on the inner wall of a purification box (11), two limit bars (16) are fixedly connected to the bottom surfaces of the plurality of movable frames (15) on the front and rear sides of the inner wall of the purification box (11), and purification filters (17) are arranged on the inner walls of the plurality of movable frames (15).
4. A semiconductor material preparation diffusion furnace according to claim 3, characterized in that: The lower end of the air outlet pipe (9) penetrates the top surface of the cooling cylinder (10) and the lower side of its inner wall, extends to its bottom surface, and is fixedly connected to the top surface of the purification box (11); the inner wall of the spiral guide plate (12) is fixedly connected to the tube wall of the air outlet pipe (9); and the right sides of the plurality of movable frames (15) penetrate the right side of the inner wall of the purification box (11) and extend to its right side.
5. The semiconductor material preparation diffusion furnace according to claim 1, characterized in that: A plurality of legs (18) are fixedly connected to the bottom surface of the furnace body (1).
6. The semiconductor material preparation diffusion furnace according to claim 1, characterized in that: A first handle (19) is fixedly connected to the center of the top surface of the furnace cover (8).
7. The semiconductor material preparation diffusion furnace according to claim 3, characterized in that: The right sides of the plurality of movable frames (15) are all fixedly connected with a second handle (20).