Auxiliary device and system for gas supply of epitaxial equipment

By using hydrogen diversion device and liquid TCS bubbler in epitaxial equipment combined with gas pressure buffer tank design, the problem of uneven epitaxial layer thickness caused by unstable TCS steam concentration is solved, and the stability of gas pressure and concentration is achieved, reducing the Uneven film thickness.

CN222274791UActive Publication Date: 2024-12-31GUANGZHOU ZENGXIN TECH CO LTD
View PDF 0 Cites 1 Cited by

Patent Information

Application Number
CN202420799764.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-04-17
Publication Date
2024-12-31
Estimated Expiration
2034-04-17

AI Technical Summary

Technical Problem

In semiconductor epitaxial process, unstable steam concentration of trichlorosilicon (TCS) leads to uneven thickness of epitaxial layer, and it is difficult for existing equipment to maintain the stability of hydrogen pressure and TCS steam concentration.

Method used

A gas supply auxiliary device for epitaxial equipment is designed, including a hydrogen diversion device, a gas pressure buffer tank and a liquid TCS bubbler. The hydrogen gas pressure is adjusted through the gas pressure buffer tank and the hydrogen gas at a preset pressure is drummed in the liquid TCS bubbler. bubbles, providing stable gaseous TCS and hydrogen.

Benefits of technology

Through the adjustment of the air pressure buffer tank, the stability of the hydrogen gas pressure is improved, and the stability of the TCS concentration is improved, reducing the thin film thickness and unevenness during epitaxial growth.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN222274791U_ABST
    Figure CN222274791U_ABST
Patent Text Reader

Abstract

The utility model provides an auxiliary device for gas supply of epitaxial equipment and a system thereof, which are used for providing reaction gas for a process cavity of a semiconductor epitaxial process. One end of the auxiliary device is externally connected with a central hydrogen supply end, the other end of the auxiliary device provides reaction gas for the process cavity, the device comprises a hydrogen flow dividing device, an air pressure buffer tank and a liquid TCS bubbler, one end of the hydrogen flow dividing device is externally connected with the central hydrogen supply end, and at least the other end of the hydrogen flow dividing device conveys hydrogen to the air pressure buffer tank. The air pressure buffer tank conveys hydrogen with preset pressure to the low liquid level of the liquid TCS of the liquid TCS bubbler; the liquid TCS bubbler is provided with a liquid TCS supply inlet, hydrogen with preset pressure is used for bubbling liquid TCS, and TCS steam is brought into the process cavity. By arranging the air pressure buffer tank, the air pressure stability of hydrogen introduced into the liquid-state TCS bubbler is improved, so that the concentration stability of gaseous-state TCS is improved, and the conditions that the film thickness is too thin and the film thickness between pieces is not uniform due to the change of the concentration of silicon source gas in the epitaxial growth process are reduced.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to an auxiliary device for gas supply of epitaxial equipment and a system thereof. Background Art

[0002] Trichlorosilane (TCS), which is commonly used in silicon-based epitaxial atmospheric pressure equipment, is usually stored, transported and supplemented in liquid form, but needs to participate in the process reaction in gaseous form during the epitaxial process. Gaseous TCS is used because the epitaxial growth process requires a stable concentration of TCS in the H2.

[0003] Therefore, based on the requirements of the epitaxial process, a suitable device is needed to safely and reliably convert TCS from liquid to gas. The commonly used device is a bubbler. The conventional industry practice of converting liquid TCS to gaseous TCS is as follows: Figure 1 As shown, cooling water of constant temperature is provided to the bubbler 20 through the cooler 10, so as to keep the liquid TCS in the bubbler 20 at a constant temperature; the hydrogen diverted from the gas diverter box is passed below the liquid level of the bubbler 20, and the hydrogen will bubble in the bubbler 20, so that the hydrogen will carry the TCS vapor through the concentration meter 30 and pass into the epitaxial process chamber 40. Under the conditions of 1100-1190°C and normal pressure, a reduction reaction will occur in the process chamber 40 to form an epitaxial layer.

[0004] In the above-mentioned conventional industry practice, it is difficult to maintain a stable pressure of the hydrogen gas diverted from the gas diversion box, and the concentration of TCS vapor is strongly correlated with the pressure of the hydrogen gas diverted from the gas diversion box. Therefore, the concentration of TCS vapor is also difficult to maintain a stable concentration, which will cause the film thickness of the current wafer (the current wafer refers to the current wafer undergoing thin film processing) to be thin and the film thickness between wafers to be uneven.

[0005] Therefore, how to solve the problem of uneven thickness of the epitaxial layer caused by unstable TCS vapor concentration has become a technical problem that the industry urgently needs to solve. Utility Model Content

[0006] In order to solve the above problems, the utility model provides an auxiliary device for gas supply of epitaxial equipment, which is used to provide reaction gas to the process chamber of the semiconductor epitaxial process; one end of the auxiliary device is externally connected to the central hydrogen supply end, and the other end provides reaction gas to the process chamber, the auxiliary device includes a hydrogen diverter, a gas pressure buffer tank and a liquid TCS bubbler, one end of the hydrogen diverter is externally connected to the central hydrogen supply end, and at least the other end conveys hydrogen to the gas pressure buffer tank, and the gas pressure buffer tank conveys hydrogen at a preset pressure to the low liquid level of the liquid TCS of the liquid TCS bubbler; wherein the liquid TCS bubbler is provided with a liquid TCS supply inlet, and the liquid TCS is bubbled with hydrogen at a preset pressure, and the liquid TCS bubbler provides gaseous TCS and hydrogen with a preset concentration ratio to the process chamber.

[0007] Preferably, a pressure regulating valve is provided at the gas outlet end of the air pressure buffer tank, and the pressure regulating valve regulates the preset pressure hydrogen to a preset pressure.

[0008] Preferably, the input pressure of the pressure regulating valve ranges from 0 to 25 MPa, and the output pressure ranges from 0 to 2.5 MPa.

[0009] Preferably, the hydrogen splitting device is connected to the gas pressure buffer tank via a first metal double-tube, and the connection between the first metal double-tube and the gas inlet of the gas pressure buffer tank is a VCR joint connection.

[0010] Preferably, the gas pressure buffer tank transports the preset pressure hydrogen to the low liquid level of the liquid TCS of the liquid TCS bubbler through a second metal double tube, and the second metal double tube is connected to the liquid TCS bubbler through a VCR joint.

[0011] Preferably, the air inlet and the air outlet of the liquid TCS bubbler and the supply inlet of the liquid TCS are all provided with isolation valves.

[0012] Preferably, the capacity of the air pressure buffer tank is 40±5L.

[0013] Preferably, the auxiliary device for gas supply of the epitaxial equipment further includes: a temperature stabilizer, which is connected to the liquid TCS bubbler and transports a circulating temperature stabilizing medium to the periphery of the liquid TCS bubbler to keep the temperature of the liquid TCS bubbler constant.

[0014] The utility model also provides a gas supply auxiliary device system for epitaxial equipment, comprising: the gas supply auxiliary device as described above, the hydrogen diversion device having at least four diversion pipelines, the diversion pipelines are all connected to the air pressure buffer tank, and the diversion pipelines correspond one-to-one to the air pressure buffer tank.

[0015] Compared with the prior art, the utility model has the following technical effects:

[0016] 1. The auxiliary device for gas supply of epitaxial equipment provided by the utility model is provided with a pressure buffer tank between the hydrogen diverter and the liquid TCS bubbler. Since the pressure buffer tank has a buffering effect, even if the pressure of hydrogen discharged from the hydrogen diverter is unstable, the gas pressure can be adjusted to a stable value after being buffered by the pressure buffer tank. Therefore, the utility model improves the stability of the hydrogen pressure entering the liquid TCS bubbler, thereby improving the stability of the silicon source gas TCS concentration, thereby reducing the situation in which the film thickness of the sheet is thin and the film thickness between sheets is uneven due to the change of the silicon source gas concentration during the epitaxial growth process.

[0017] 2. In a further preferred embodiment, in order to further ensure the stability of the hydrogen pressure entering the liquid TCS bubbler, the utility model is provided with a pressure regulating valve at the gas outlet end of the pressure buffer tank, and further pressure regulation is performed on the hydrogen discharged from the gas outlet end of the pressure buffer tank, and the hydrogen pressure is adjusted to a preset pressure, thereby further improving the stability of the hydrogen pressure entering the liquid TCS bubbler.

[0018] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 It is a schematic diagram of the structure of the common practice in the industry to convert liquid TCS into gaseous TCS;

[0021] Figure 2 It is a structural schematic diagram of a gas supply auxiliary device for epitaxial equipment provided by an embodiment of the utility model;

[0022] Figure 3 It is a structural schematic diagram of a gas supply auxiliary device for epitaxial equipment provided in another embodiment of the utility model.

[0023] Description of reference numerals:

[0024] 10- Cooler;

[0025] 20-bubbler;

[0026] 30-Concentration meter

[0027] 40-Process chamber

[0028] 1- Central hydrogen supply terminal;

[0029] 2- auxiliary devices;

[0030] 21-Hydrogen splitter;

[0031] 211-shunt pipeline;

[0032] 22-first metal double sleeve;

[0033] 23-Air pressure buffer tank;

[0034] 24- second metal double sleeve;

[0035] 25-pressure regulating valve;

[0036] 26-Liquid TCS bubbler;

[0037] 27-exhaust pipe;

[0038] 28-Supply pipe;

[0039] 29-Isolation valve. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0041] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present utility model and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the utility model described here can be implemented in an order other than those illustrated or described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices. The terms "on" and "above" and any of their variations are intended to describe positional relationships and do not represent a relationship of direct contact between the described objects.

[0042] As described in the background technology, trichlorosilane (TCS) commonly used in silicon carbide epitaxial equipment is usually stored, transported and added in liquid form, but needs to participate in the process reaction in gaseous form during the epitaxial process. Figure 1 In the conventional industry practice of converting liquid TCS into gaseous TCS shown in the figure, since the gas diversion box usually diverts the hydrogen into 4 or 8 paths, when the flow rate of one of the hydrogen paths suddenly changes, the hydrogen pressure in the same gas diversion box will also suddenly change, causing the TCS vapor concentration to suddenly change, resulting in unstable TCS vapor concentration, and further causing uneven thickness of the epitaxial layer.

[0043] To solve the above technical problems, please refer to Figure 2 The utility model provides an auxiliary device 2 for gas supply of epitaxial equipment, which is used to provide reaction gas to the process chamber of the semiconductor epitaxial process; one end of the auxiliary device 2 is externally connected to the central hydrogen supply end 1, and the other end provides reaction gas to the process chamber 40. The auxiliary device 2 includes a hydrogen splitter 21, a gas pressure buffer tank 23 and a liquid TCS bubbler 26. One end of the hydrogen splitter 21 is externally connected to the central hydrogen supply end 1, and at least the other end conveys hydrogen to the gas pressure buffer tank 23. The gas pressure buffer tank 23 conveys hydrogen at a preset pressure to the low liquid level of the liquid TCS in the liquid TCS bubbler 26; wherein the liquid TCS bubbler 26 is provided with a supply inlet of liquid TCS, and hydrogen at a preset pressure is used to bubble the liquid TCS, and the liquid TCS bubbler 26 provides gaseous TCS and hydrogen with a preset concentration ratio to the process chamber 40.

[0044] The utility model sets a gas pressure buffer tank 23 between the hydrogen splitter 21 and the liquid TCS bubbler 26. Since the gas pressure buffer tank 23 has a buffering effect, even if the hydrogen pressure discharged from the hydrogen splitter 21 is unstable, the gas pressure can be adjusted to a stable value after being buffered by the gas pressure buffer tank 23. Therefore, the utility model improves the stability of the hydrogen pressure passed into the liquid TCS bubbler 26, thereby improving the stability of the silicon source gas TCS concentration, thereby reducing the situation in which the film thickness of the sheet is thin and the film thickness between sheets is uneven due to the change of the silicon source gas concentration during the epitaxial growth process.

[0045] The following specific embodiments are used to describe the technical solution of the utility model in detail. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0046] Please refer to Figure 3In the semiconductor epitaxial process, in order to ensure the stability of the concentration of gaseous TCS introduced into the process chamber 40, an embodiment of the utility model provides an auxiliary device 2 for gas supply of epitaxial equipment, one end of the auxiliary device 2 is used for externally connecting to the central hydrogen supply end 1, and the other end is used for connecting to the process chamber 40.

[0047] The auxiliary device 2 includes a hydrogen splitter 21, a gas pressure buffer tank 23 and a liquid TCS bubbler 26, which are arranged in sequence. One end of the hydrogen splitter 21 (for the sake of distinction, this end can be called the gas inlet end) is used to connect to the central hydrogen supply end 1, and the central hydrogen supply end 1 supplies hydrogen to the hydrogen splitter 21 through this end. At least the other end of the hydrogen splitter 21 (for the sake of distinction from the gas inlet end of the hydrogen splitter 21, this end can be called the gas outlet end, and the gas outlet end can also be provided with a split pipeline 211) transports hydrogen to the gas pressure buffer tank 23, and the hydrogen splitter 21 can transport hydrogen to at least one gas pressure buffer tank 23. It can be seen that the hydrogen splitter 21 transports hydrogen to each gas pressure buffer tank 23 in a split manner. The utility model does not limit the number of the diversion pipelines 211 of the hydrogen diversion device 21 , which can generally be set according to the number of the air pressure buffer tanks 23 . The number of the diversion pipelines 211 is not less than the number of the air pressure buffer tanks 23 , and one air pressure buffer tank 23 supplies gas through one diversion pipeline 211 .

[0048] In order to prevent pipeline leakage, the hydrogen splitter 21 is connected to the air inlet of the air pressure buffer tank 23 by a first metal double sleeve 22, and the first metal double sleeve 22 is connected to the air inlet of the air pressure buffer tank 23 by a first VCR joint. The air outlet of the air pressure buffer tank 23 is connected to the air inlet of the liquid TCS bubbler through a second metal double sleeve 24, and the second metal double sleeve 24 is connected to the air inlet of the liquid TCS bubbler by a second VCR joint, and the second metal double sleeve 24 extends from the air inlet of the liquid TCS bubbler to the low liquid level of the liquid TCS of the liquid TCS bubbler 26, and is used to transport hydrogen of a preset pressure to the low liquid level of the liquid TCS of the liquid TCS bubbler 26.

[0049] In addition, if the volume of the air pressure buffer tank 23 is too small, the buffering effect is not obvious; if the volume is too large, as an auxiliary device, it will occupy a larger volume, and in case of leakage, the harm will be greater. Therefore, after comprehensive consideration, the capacity of the air pressure buffer tank 23 is preferably 40±5L.

[0050] Since the air pressure buffer tank 23 has a buffering function, the hydrogen discharged from the central hydrogen supply end 1 is buffered by the air pressure buffer tank 23 and the pressure can be adjusted to a preset pressure.

[0051] The utility model sets a pressure buffer tank 23 between the hydrogen diverter 21 and the liquid TCS bubbler 26. The hydrogen discharged from the hydrogen diverter 21 may be affected by the central hydrogen supply end or other factors, resulting in unstable pressure output from the hydrogen diverter 21. The hydrogen discharged from the hydrogen diverter 21 can maintain the pressure of the output hydrogen to a relatively stable value after being buffered by the pressure buffer tank 23. After the liquid TCS bubbler inputs hydrogen with a relatively stable pressure, it can provide TCS gas and hydrogen gas with relatively stable concentrations to the process chamber of the epitaxial equipment. The utility model improves the stability of the hydrogen pressure introduced into the liquid TCS bubbler 26, thereby improving the stability of the TCS concentration of the silicon source gas, thereby reducing the situation in which the film thickness of the sheet is thin and the film thickness between sheets is uneven due to changes in the concentration of the silicon source gas during the epitaxial growth process.

[0052] In order to further ensure the stability of the hydrogen pressure entering the liquid TCS bubbler 26, the hydrogen discharged from the outlet end of the pressure buffer tank 23 is further pressure-regulated by setting a pressure regulating valve to a preset pressure. In one embodiment, a pressure regulating valve 25 is provided on the second metal double sleeve 24 at the outlet end of the pressure buffer tank 23. The pressure of the hydrogen discharged by the hydrogen diverter 21 received by the air inlet end of the pressure buffer tank 23 is usually higher than the pressure of the gas buffer tank 23. The pressure regulating valve 25 is usually a pressure reducing valve. The pressure buffer tank can eliminate the interference of the pressure fluctuation of the hydrogen discharged from the central hydrogen supply end 1 to a certain extent. After passing through the pressure reducing valve, the hydrogen delivered to the TCS bubbler can be maintained within the preset pressure range.

[0053] The liquid TCS bubbler 26 is also provided with a supply inlet and an outlet for liquid TCS, and a supply pipe 28 is provided on the supply inlet, through which external liquid TCS is transported to the liquid TCS bubbler 26. An outlet pipe 27 is provided on the outlet of the liquid TCS bubbler 26, and the liquid TCS bubbler 26 is connected to the process chamber 40 through the outlet pipe 27. In the liquid TCS bubbler 26, hydrogen at a preset pressure is bubbled with liquid TCS, and gaseous TCS and hydrogen at a preset concentration ratio are transported to the process chamber 40 through the outlet pipe 27.

[0054] In some embodiments, a temperature stabilizer is also provided on the liquid TCS storage 26, and the temperature stabilizer may be a heating device. The heating device may heat the liquid TCS of the liquid TCS bubbler 26. In such embodiments, when the heating device heats the liquid TCS, the pressure of the hydrogen gas delivered by the gas buffer tank 23 may be adjusted in a timely manner. The provision of the gas buffer tank 23 makes it easier to adjust the pressure of the hydrogen gas delivered to the liquid TCS bubbler.

[0055] In order to facilitate cutting off the delivery of gas and liquid when replacing the liquid TCS bubbler 26, an isolation valve 29 is provided on the second metal double sleeve 24, the gas outlet pipe 27 and the supply pipe 28 at the gas inlet end of the liquid TCS bubbler 26. The isolation valve 29 is a pneumatic isolation valve, which is conducive to controlling the flow direction of the pipeline gas and preventing the gas from crosstalking with each other at different spatial positions.

[0056] The hydrogen discharged from the hydrogen diversion device 21 is transported to the air pressure buffer tank 23 through the first metal double-tube 22. Considering factors such as the length and curvature of the pipeline, the gas may produce pressure loss during transportation. Therefore, the hydrogen pressure entering the air pressure buffer tank 23 is preferably set at 45±0.5psi.

[0057] In the technical field, the gaseous TCS and hydrogen with a preset concentration ratio discharged from the outlet of the liquid TCS bubbler 26 need to be transported to the process chamber 40 through a concentration meter. Since the concentration meter is calibrated at a pressure of 30psi, under the normal working pressure of 30psi, the concentration meter will control the flow rate of the flow controller (MFC, Mass Flow Controller) to eliminate the influence of concentration fluctuations on the product film thickness. Considering that the pressure fluctuation is too large and will exceed the normal working pressure of the concentration meter, it is preferred that the hydrogen discharged from the outlet of the air pressure buffer tank 23 is set at 30±0.1psi.

[0058] The utility model does not impose any specific restrictions on the range of the pressure regulating valve 25, which can be set according to actual use requirements. Generally speaking, the input pressure of the range of the pressure regulating valve 25 is 0-25MPa, and the output pressure is 0-2.5MPa.

[0059] The auxiliary device 2 also includes a temperature stabilizer, which is connected to the liquid TCS bubbler 26 and is used to transport a circulating temperature stabilizing medium to the periphery of the liquid TCS bubbler 26 to keep the temperature of the liquid TCS bubbler 26 constant.

[0060] In one embodiment, the central hydrogen supply end 1 supplies hydrogen to the hydrogen diversion device 21, which is diverted through four or eight or other number of diversion pipelines 211 and then transported to the air pressure buffer tanks 23 of each auxiliary device 2. The primary pressure is first adjusted by the air pressure buffer tank 23, and then further adjusted to a preset pressure hydrogen by the pressure regulating valve 25. The preset pressure hydrogen is then introduced into the low liquid level of the liquid TCS in the liquid TCS bubbler 26 to bubble the liquid TCS to obtain a preset concentration ratio of gaseous TCS and hydrogen.

[0061] Another embodiment of the utility model also provides a gas supply auxiliary device system for epitaxial equipment, including the above-mentioned gas supply auxiliary device 2, the hydrogen diversion device has at least four diversion pipelines 211, the diversion pipelines 211 are all connected to the air pressure buffer tank 23, and the diversion pipelines 211 correspond to the air pressure buffer tank 23 one by one.

[0062] The utility model arranges an air pressure buffer tank between the hydrogen splitter and the liquid TCS bubbler. Since the air pressure buffer tank has a buffering effect, even if the pressure of the hydrogen discharged from the hydrogen splitter is unstable, the gas pressure can be adjusted to a stable value after being buffered by the air pressure buffer tank. Therefore, the utility model improves the stability of the hydrogen pressure passed into the liquid TCS bubbler, thereby improving the stability of the TCS concentration of the silicon source gas, thereby reducing the situation in which the film thickness of the sheet is thin and the film thickness between sheets is uneven due to the change of the silicon source gas concentration during the epitaxial growth process.

[0063] In a further preferred embodiment, in order to further ensure the stability of the hydrogen pressure passed into the liquid TCS bubbler, the utility model is provided with a pressure regulating valve at the gas outlet end of the pressure buffer tank, and further pressure regulation is performed on the hydrogen discharged from the gas outlet end of the pressure buffer tank, and the hydrogen pressure is adjusted to a preset pressure, thereby further improving the stability of the hydrogen pressure passed into the liquid TCS bubbler.

[0064] The liquid TCS bubbler 26 in the attached drawings provided by the present invention is only a simplified schematic diagram, and is not a diagram showing the actual structure and shape of the liquid TCS bubbler in the auxiliary device of the real epitaxial equipment.

[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.

Claims

1. A gas supply auxiliary device for epitaxial equipment, used to provide reactive gas to a process chamber of a semiconductor epitaxial process, characterized in that: One end of the auxiliary device is externally connected to the central hydrogen supply end, and the other end provides reaction gas for the process chamber. The auxiliary device includes a hydrogen diverter, a gas pressure buffer tank and a liquid TCS bubbler. One end of the hydrogen diverter is externally connected to the central hydrogen supply end, and at least the other end conveys hydrogen to the gas pressure buffer tank. The gas pressure buffer tank conveys hydrogen at a preset pressure to the low liquid level of the liquid TCS of the liquid TCS bubbler; wherein the liquid TCS bubbler is provided with a liquid TCS supply inlet, and hydrogen at a preset pressure is used to bubble the liquid TCS, and the liquid TCS bubbler provides gaseous TCS and hydrogen with a preset concentration ratio to the process chamber.

2. The auxiliary device for gas supply of epitaxial equipment according to claim 1, characterized in that: The gas outlet end of the air pressure buffer tank is provided with a pressure regulating valve, and the pressure regulating valve regulates the preset pressure hydrogen to a preset pressure.

3. The auxiliary device for gas supply of epitaxial equipment according to claim 2, characterized in that: The input pressure of the pressure regulating valve is 0-25 MPa, and the output pressure is 0-2.5 MPa.

4. The auxiliary device for gas supply of epitaxial equipment according to claim 1, characterized in that: The hydrogen splitting device is connected to the gas pressure buffer tank through a first metal double-tube, and the connection between the first metal double-tube and the air inlet of the gas pressure buffer tank is a VCR joint connection.

5. The auxiliary device for gas supply of epitaxial equipment according to claim 1, characterized in that: The gas pressure buffer tank transports the preset pressure hydrogen to the low liquid level of the liquid TCS of the liquid TCS bubbler through a second metal double-tube, and the second metal double-tube is connected to the liquid TCS bubbler through a VCR joint.

6. The auxiliary device for gas supply of epitaxial equipment according to claim 1, characterized in that: The air inlet, the air outlet of the liquid TCS bubbler and the supply inlet of the liquid TCS are all provided with isolation valves.

7. The auxiliary device for gas supply of epitaxial equipment according to claim 1, characterized in that: The capacity of the air pressure buffer tank is 40±5L.

8. The auxiliary device for gas supply of epitaxial equipment according to claim 1, characterized in that: Also includes: A temperature stabilizer is connected to the liquid TCS bubbler to transport a circulating temperature stabilizing medium to the periphery of the liquid TCS bubbler to keep the temperature of the liquid TCS bubbler constant.

9. A gas supply auxiliary device system for epitaxial equipment, characterized in that: include: According to the auxiliary device for gas supply as described in any one of claims 1 to 8, the hydrogen diversion device has at least four diversion pipelines, the diversion pipelines are all connected to the air pressure buffer tank, and the diversion pipelines correspond to the air pressure buffer tanks one by one.

Citation Information

Cited By

  • Constant-temperature bubbling type supply device for vacuum plasma processing and use method of constant-temperature bubbling type supply device

    CN120809563A