Semiconductor crystal growing furnace
By designing the refrigeration circulation chamber and refrigeration sheet chamber in a semiconductor crystal growth furnace, combining the micro liquid extraction pump and the cooling plate, the problem of poor heat dissipation performance of traditional equipment is solved, more efficient heat dissipation and stability are achieved, and equipment use is extended life.
Patent Information
- Application Number
- CN202420077979.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-12
- Publication Date
- 2025-01-14
- Estimated Expiration
- 2034-01-12
AI Technical Summary
The internal heat dissipation structure of the traditional semiconductor crystal growth furnace is simple and lacks a cyclic structure, which leads to poor heat dissipation performance, which may lead to overheating of the equipment, affecting product quality and use safety.
A semiconductor crystal growth furnace is designed, including a refrigeration circulation chamber, a refrigeration sheet chamber, an electric pump chamber and a heat dissipation chamber. It adopts a micro liquid extraction pump, a semiconductor refrigeration sheet and a cold conducting sheet to realize the circulating refrigeration effect of the equipment through circulating refrigeration liquid. Enhanced heat dissipation performance.
It effectively avoids equipment overheating, improves heat dissipation effect, ensures the stability and safety of the equipment, extends the service life, and improves product quality and efficiency.
Smart Images
Figure CN222349175U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor crystal growth furnaces, in particular to a semiconductor crystal growth furnace. Background Art
[0002] A semiconductor crystal growth furnace refers to a manufacturing equipment that can produce semiconductor crystals through the CZ method or the zone melting method. Among them, the CZ method semiconductor crystal growth furnace is the most common equipment for manufacturing semiconductor crystals. The semiconductor crystal growth furnace is mainly composed of three parts: the host, the heating power supply and the computer control system.
[0003] Semiconductor crystal growth furnaces can manufacture semiconductor crystals, which can be seen everywhere in people's lives, so semiconductor crystal growth furnaces are a very important equipment in people's production and life. However, the heat dissipation structure inside traditional semiconductor crystal growth furnaces is simple, which is just simple refrigerant or fan heat dissipation without a circulation structure, resulting in poor heat dissipation performance of the equipment. During use, the equipment may overheat, affecting the quality of the products manufactured by the equipment, reducing the efficiency of the equipment, and even damaging the internal structure of the equipment, reducing the stability and safety of the equipment during use, reducing the service life of the equipment, and greatly reducing the use effect of the equipment. Utility Model Content
[0004] In order to achieve the above-mentioned purpose, the utility model specifically adopts the following technical solutions:
[0005] A semiconductor crystal growth furnace comprises a growth furnace body, a refrigeration circulation cavity is opened on the right side of the upper side inside the growth furnace body, a refrigeration plate cavity is opened on the right side of the inner wall of the refrigeration circulation cavity, an electric pump cavity is opened on the left side inside the growth furnace body, a micro liquid pump is fixedly connected to the lower side of the inner wall of the electric pump cavity, an input end of the micro liquid pump is fixedly connected to an input pipe, and an output end of the micro liquid pump is fixedly connected to an output pipe, a heat dissipation cavity is commonly opened around the inner wall of the growth furnace body, and a refrigeration structure with a variable covering range is arranged on the left side of the inner wall of the refrigeration plate cavity.
[0006] Preferably, the refrigeration structure includes a plurality of semiconductor refrigeration plates, the left sides of the plurality of semiconductor refrigeration plates are fixedly connected to the left side of the inner wall of the refrigeration plate cavity, the left sides of the plurality of semiconductor refrigeration plates are fixedly connected with a cooling plate, the right side of the rear side of the inner wall of the refrigeration circulation cavity is fixedly connected with a circulation pipe, the interior of the refrigeration circulation cavity and the interior of the heat dissipation cavity are both filled with refrigerant. By setting up the refrigeration structure, the circulation refrigeration effect of the equipment can be ensured, and the problem of poor heat dissipation performance of the equipment caused by the lack of a circulation structure in the traditional semiconductor crystal growth furnace is avoided, the heat dissipation effect of the equipment is increased, and the problem of overheating of the traditional equipment during use and even damage to the internal structure of the equipment is avoided, thereby ensuring the quality of the equipment manufacturing products, improving the use efficiency of the equipment, ensuring the stability and safety of the equipment during use, increasing the service life of the equipment, and greatly improving the use effect of the equipment.
[0007] Preferably, one end of the input pipe passes through the right side of the inner wall of the electric pump cavity and extends to the left side of the rear side of the inner wall of the refrigeration cycle cavity, one end of the output pipe passes through the left side of the inner wall of the electric pump cavity and extends to one side of the inner wall of the heat dissipation cavity, the left sides of the plurality of cooling plates all pass through the left side of the inner wall of the refrigeration plate cavity and extend to the right side of the inner wall of the refrigeration cycle cavity and are fixedly connected to the left side of the inner wall of the refrigeration cycle cavity, and one end of the circulation pipe passes through the right side of the rear side of the inner wall of the refrigeration cycle cavity and extends to one side of the inner wall of the heat dissipation cavity.
[0008] Preferably, a plurality of heat dissipation openings are provided on the upper side of the inner wall of the refrigeration plate cavity.
[0009] Preferably, a graphite crucible is provided on the lower side of the inner wall of the growth furnace body, and quartz crucibles are provided around the inner wall of the graphite crucible.
[0010] Preferably, the material of the plurality of cooling plates is all aluminum.
[0011] Preferably, a fixing plate is provided on the top surface of the growth furnace body, and a lifting body is provided on the top surface of the fixing plate.
[0012] The beneficial effects of the utility model are as follows:
[0013] 1. The utility model can circulate the refrigerant between the refrigeration circulation chamber and the heat dissipation chamber by arranging a combination structure of a micro-liquid pump, an input pipe, an output pipe, a circulation pipe, etc., thereby increasing the refrigeration effect of the equipment. The refrigeration effect of the equipment is guaranteed by arranging semiconductor refrigeration plates and cooling plates. The equipment can ensure the circulation refrigeration effect of the equipment by arranging a refrigeration structure, thereby avoiding the problem that the traditional semiconductor crystal growth furnace has no circulation structure inside, resulting in poor heat dissipation performance of the equipment, increasing the heat dissipation effect of the equipment, avoiding the problem that the traditional equipment may overheat during use, and even damage the internal structure of the equipment, thereby ensuring the quality of the equipment manufacturing products, improving the use efficiency of the equipment, ensuring the stability and safety of the equipment during use, increasing the service life of the equipment, and greatly improving the use effect of the equipment.
[0014] 2. The utility model can better connect the internal structure of the equipment, ensure the stability and safety of the equipment when in use, and improve the use effect of the equipment by setting the penetration effect between the input pipe and the electric pump cavity and the refrigeration circulation cavity, the penetration effect between the output pipe and the electric pump cavity and the heat dissipation cavity, the penetration effect between the cooling fin and the refrigeration fin cavity and the refrigeration circulation cavity, the fixing effect between the cooling fin and the refrigeration circulation cavity, the penetration effect between the circulation pipe and the refrigeration circulation cavity and the heat dissipation cavity, etc.
[0015] 3. The utility model ensures the heat dissipation of the semiconductor refrigeration plate by setting the heat dissipation port, prevents the semiconductor refrigeration plate from being overheated and damaged during use, and increases the service life of the semiconductor refrigeration plate. The basic heating effect of the equipment is ensured by setting the graphite crucible and the quartz crucible. The cooling effect of the equipment is increased by setting the cooling plate and adopting aluminum material. The basic lifting effect of the equipment is ensured by setting the fixing plate and the lifting body. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is the overall front section view of the utility model;
[0017] Figure 2 This utility model Figure 1 Enlarged view of part A in the middle;
[0018] Figure 3 This is a cross-sectional view of the cold conduction plate of the utility model;
[0019] Figure 4 This is a three-dimensional diagram of the utility model micro liquid pump;
[0020] Figure 5 It is an overall stereogram of the utility model.
[0021] Figure numerals: 1. Growth furnace body; 2. Refrigeration circulation chamber; 3. Refrigeration plate chamber; 4. Electric pump chamber; 5. Micro liquid pump; 6. Input pipe; 7. Output pipe; 8. Heat dissipation chamber; 9. Semiconductor refrigeration plate; 10. Cooling plate; 11. Circulation pipe; 12. Refrigeration liquid; 13. Heat dissipation port; 14. Graphite crucible; 15. Quartz crucible; 16. Fixed plate; 17. Pulling body. DETAILED DESCRIPTION
[0022] In order to make the purpose, technical solution and advantages of the embodiments of the present utility model clearer, the technical solution in the embodiments of the present utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the present utility model.
[0023] The device's "front, back, left, right" viewing angles are Figure 1 The directions in the attached drawings are taken as reference.
[0024] like Figure 1-5As shown, a semiconductor crystal growth furnace includes a growth furnace body 1, a refrigeration cycle chamber 2 is opened on the right side of the upper side of the growth furnace body 1, a refrigeration plate chamber 3 is opened on the right side of the inner wall of the refrigeration cycle chamber 2, an electric pump chamber 4 is opened on the left side of the growth furnace body 1, and a micro-liquid pump 5 is fixedly connected to the lower side of the inner wall of the electric pump chamber 4. The micro-liquid pump 5 is an existing device, which has one water inlet (input end) and one water outlet (output end), and can continuously form a vacuum or negative pressure at the inlet, and form a large output pressure at the drain port, so that the refrigerant 12 can be drawn out of the refrigeration cycle chamber 2 and pressed into the heat dissipation chamber 8. The input end of the micro-liquid pump 5 is fixedly connected to an input pipe 6, and the output end of the micro-liquid pump 5 is fixedly connected to an output pipe 7. The heat dissipation chamber 8 is commonly opened around the inner wall of the growth furnace body 1, and a refrigeration structure with a variable covering range is arranged on the left side of the inner wall of the refrigeration plate chamber 3. The refrigeration structure includes a plurality of semiconductor refrigeration plates 9. The semiconductor refrigeration plate 9 is an existing structure that can use semiconductor materials to achieve the purpose of refrigeration, and The cooling speed is fast and the materials are environmentally friendly. The left sides of multiple semiconductor refrigeration plates 9 are fixedly connected to the left side of the inner wall of the refrigeration plate cavity 3. The left sides of multiple semiconductor refrigeration plates 9 are fixedly connected with cooling plates 10. The right side of the rear side of the inner wall of the refrigeration circulation cavity 2 is fixedly connected with a circulation pipe 11. The interior of the refrigeration circulation cavity 2 and the interior of the heat dissipation cavity 8 are both filled with refrigerant 12. The refrigerant 12 has a higher heat transfer coefficient, lower viscosity and smaller density, and can have a higher circulation efficiency when operating in a given temperature range. By setting a refrigeration structure, the circulation refrigeration effect of the equipment can be guaranteed, avoiding the problem of poor heat dissipation performance of the equipment due to the lack of a circulation structure in the traditional semiconductor crystal growth furnace, increasing the heat dissipation effect of the equipment, avoiding the problem that traditional equipment may overheat during use, and even damage the internal structure of the equipment, ensuring the quality of the equipment manufacturing products, improving the use efficiency of the equipment, ensuring the stability and safety of the equipment during use, increasing the service life of the equipment, and greatly improving the use effect of the equipment.
[0025] like Figure 2-3 As shown, in some embodiments, one end of the input pipe 6 passes through the right side of the inner wall of the electric pump chamber 4 and extends to the left side of the rear side of the inner wall of the refrigeration cycle chamber 2, one end of the output pipe 7 passes through the left side of the inner wall of the electric pump chamber 4 and extends to one side of the inner wall of the heat dissipation chamber 8, the left sides of multiple cooling plates 10 all pass through the left side of the inner wall of the refrigeration plate chamber 3 and extend to the right side of the inner wall of the refrigeration cycle chamber 2 and are fixedly connected to the left side of the inner wall of the refrigeration cycle chamber 2, and the multiple cooling plates 10 are fixedly connected to the inner wall of the refrigeration cycle chamber 2 by welding, which ensures the fixing effect between the structures, and one end of the circulation pipe 11 passes through the right side of the rear side of the inner wall of the refrigeration cycle chamber 2 and extends to one side of the inner wall of the heat dissipation chamber 8, which can better connect the internal structure of the equipment, ensure the stability and safety of the equipment during use, and improve the use effect of the equipment.
[0026] like Figure 2-5 As shown, in some embodiments, a plurality of heat dissipation ports 13 are provided on the upper side of the inner wall of the refrigeration plate cavity 3. By providing the heat dissipation ports 13, the heat dissipation of the semiconductor refrigeration plate 9 is ensured, the semiconductor refrigeration plate 9 is prevented from being overheated and damaged during use, and the service life of the semiconductor refrigeration plate 9 is increased. A graphite crucible 14 is provided on the lower side of the inner wall of the growth furnace body 1. A quartz crucible 15 is provided around the inner wall of the graphite crucible 14. By providing the graphite crucible 14 and the quartz crucible 15, the basic heating effect of the equipment is ensured. The material of the plurality of cooling plates 10 is aluminum. By providing the cooling plates 10 and using aluminum material, the cooling effect of the equipment is increased. A fixing plate 16 is provided on the top surface of the growth furnace body 1. A lifting body 17 is provided on the top surface of the fixing plate 16. By providing the fixing plate 16 and the lifting body 17, the basic lifting effect of the equipment is ensured.
[0027] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A semiconductor crystal growth furnace, comprising a growth furnace body (1), characterized in that: A refrigeration cycle chamber (2) is provided on the right side of the upper side of the growth furnace body (1), a refrigeration plate chamber (3) is provided on the right side of the inner wall of the refrigeration cycle chamber (2), an electric pump chamber (4) is provided on the left side of the growth furnace body (1), a micro-liquid pump (5) is fixedly connected to the lower side of the inner wall of the electric pump chamber (4), an input end of the micro-liquid pump (5) is fixedly connected to an input pipe (6), and an output end of the micro-liquid pump (5) is fixedly connected to an output pipe (7), a heat dissipation chamber (8) is provided around the inner wall of the growth furnace body (1), and a refrigeration structure with a variable covering range is provided on the left side of the inner wall of the refrigeration plate chamber (3).
2. A semiconductor crystal growth furnace according to claim 1, characterized in that: The refrigeration structure comprises a plurality of semiconductor refrigeration plates (9), the left sides of the plurality of semiconductor refrigeration plates (9) are fixedly connected to the left side of the inner wall of the refrigeration plate cavity (3), the left sides of the plurality of semiconductor refrigeration plates (9) are fixedly connected to a cooling plate (10), the right side of the rear side of the inner wall of the refrigeration circulation cavity (2) is fixedly connected to a circulation pipe (11), and the interior of the refrigeration circulation cavity (2) and the interior of the heat dissipation cavity (8) are filled with a refrigerant (12).
3. A semiconductor crystal growth furnace according to claim 2, characterized in that: One end of the input pipe (6) passes through the right side of the inner wall of the electric pump chamber (4) and extends to the left side of the rear side of the inner wall of the refrigeration cycle chamber (2); one end of the output pipe (7) passes through the left side of the inner wall of the electric pump chamber (4) and extends to one side of the inner wall of the heat dissipation chamber (8); the left sides of the plurality of cooling plates (10) all pass through the left side of the inner wall of the refrigeration plate chamber (3) and extend to the right side of the inner wall of the refrigeration cycle chamber (2) and are fixedly connected to the left side of the inner wall of the refrigeration cycle chamber (2); one end of the circulation pipe (11) passes through the right side of the rear side of the inner wall of the refrigeration cycle chamber (2) and extends to one side of the inner wall of the heat dissipation chamber (8).
4. A semiconductor crystal growth furnace according to claim 1, characterized in that: A plurality of heat dissipation openings (13) are provided on the upper side of the inner wall of the refrigeration plate cavity (3).
5. A semiconductor crystal growth furnace according to claim 1, characterized in that: A graphite crucible (14) is provided on the lower side of the inner wall of the growth furnace body (1), and a quartz crucible (15) is provided around the inner wall of the graphite crucible (14).
6. A semiconductor crystal growth furnace according to claim 2, characterized in that: The material of the plurality of cooling fins (10) is all aluminum.
7. A semiconductor crystal growth furnace according to claim 1, characterized in that: A fixing plate (16) is provided on the top surface of the growth furnace body (1), and a lifting body (17) is provided on the top surface of the fixing plate (16).